JPS4863685A - - Google Patents
Info
- Publication number
- JPS4863685A JPS4863685A JP47116096A JP11609672A JPS4863685A JP S4863685 A JPS4863685 A JP S4863685A JP 47116096 A JP47116096 A JP 47116096A JP 11609672 A JP11609672 A JP 11609672A JP S4863685 A JPS4863685 A JP S4863685A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19988071A | 1971-11-18 | 1971-11-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4863685A true JPS4863685A (https=) | 1973-09-04 |
| JPS5118783B2 JPS5118783B2 (https=) | 1976-06-12 |
Family
ID=22739396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47116096A Expired JPS5118783B2 (https=) | 1971-11-18 | 1972-11-17 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3751726A (https=) |
| JP (1) | JPS5118783B2 (https=) |
| BE (1) | BE791487A (https=) |
| CA (1) | CA967289A (https=) |
| DE (1) | DE2255676C2 (https=) |
| FR (1) | FR2160545B1 (https=) |
| GB (1) | GB1397086A (https=) |
| IT (1) | IT968869B (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5114564U (https=) * | 1974-07-18 | 1976-02-02 | ||
| JPS5210662A (en) * | 1975-07-16 | 1977-01-27 | Matsushita Electric Ind Co Ltd | Semi-conductor circuit |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7312547A (nl) * | 1973-09-12 | 1975-03-14 | Philips Nv | Halfgeleiderinrichting, werkwijze ter vervaardiging daarvan en schakeling bevattende de inrichting. |
| US3836997A (en) * | 1973-09-26 | 1974-09-17 | Rca Corp | Semiconductor darlington circuit |
| US3909700A (en) * | 1974-01-18 | 1975-09-30 | Gen Electric | Monolithic semiconductor rectifier circuit structure |
| FR2297495A1 (fr) * | 1975-01-10 | 1976-08-06 | Radiotechnique Compelec | Structure de transistors complementaires et son procede de fabrication |
| GB1488958A (en) * | 1975-03-25 | 1977-10-19 | Texas Instruments Ltd | Fast switching darlington circuit |
| US4097887A (en) * | 1976-09-13 | 1978-06-27 | General Electric Company | Low resistance, durable gate contact pad for thyristors |
| DE2718644C2 (de) * | 1977-04-27 | 1979-07-12 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch' integrierte Halbleiterdiodenanordnung und deren Verwendung als Gehörschutzgleichrichter |
| US4136354A (en) * | 1977-09-15 | 1979-01-23 | National Semiconductor Corporation | Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level |
| US4243952A (en) * | 1978-10-30 | 1981-01-06 | Rca Corporation | Temperature compensated bias circuit for semiconductor lasers |
| FR2527008A1 (fr) * | 1982-05-14 | 1983-11-18 | Thomson Csf | Structure semiconductrice de type mesa associant une diode et un transistor de types transverses en antiparallele |
| IT1221867B (it) * | 1983-05-16 | 1990-07-12 | Ates Componenti Elettron | Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable |
| JP2714969B2 (ja) * | 1989-01-13 | 1998-02-16 | マツダ株式会社 | 自動車のサスペンション装置 |
| US5541439A (en) * | 1994-11-17 | 1996-07-30 | Xerox Corporation | Layout for a high voltage darlington pair |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL260481A (https=) * | 1960-02-08 | |||
| US3210617A (en) * | 1961-01-11 | 1965-10-05 | Westinghouse Electric Corp | High gain transistor comprising direct connection between base and emitter electrodes |
| DE1764455C3 (de) * | 1968-06-08 | 1980-02-07 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithisch integrierte Darlington-Transistorschaltung |
| US3624454A (en) * | 1969-09-15 | 1971-11-30 | Gen Motors Corp | Mesa-type semiconductor device |
-
0
- BE BE791487D patent/BE791487A/xx unknown
-
1971
- 1971-11-18 US US00199880A patent/US3751726A/en not_active Expired - Lifetime
-
1972
- 1972-10-11 IT IT30377/72A patent/IT968869B/it active
- 1972-10-19 CA CA154,323A patent/CA967289A/en not_active Expired
- 1972-11-14 DE DE2255676A patent/DE2255676C2/de not_active Expired
- 1972-11-16 FR FR7240738A patent/FR2160545B1/fr not_active Expired
- 1972-11-17 JP JP47116096A patent/JPS5118783B2/ja not_active Expired
- 1972-11-20 GB GB5345172A patent/GB1397086A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5114564U (https=) * | 1974-07-18 | 1976-02-02 | ||
| JPS5210662A (en) * | 1975-07-16 | 1977-01-27 | Matsushita Electric Ind Co Ltd | Semi-conductor circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1397086A (en) | 1975-06-11 |
| BE791487A (fr) | 1973-03-16 |
| DE2255676A1 (de) | 1973-05-24 |
| FR2160545B1 (https=) | 1980-08-14 |
| FR2160545A1 (https=) | 1973-06-29 |
| DE2255676C2 (de) | 1985-04-04 |
| CA967289A (en) | 1975-05-06 |
| JPS5118783B2 (https=) | 1976-06-12 |
| IT968869B (it) | 1974-03-20 |
| US3751726A (en) | 1973-08-07 |