JPH1197721A - Photoconductive light receiving element - Google Patents
Photoconductive light receiving elementInfo
- Publication number
- JPH1197721A JPH1197721A JP9259682A JP25968297A JPH1197721A JP H1197721 A JPH1197721 A JP H1197721A JP 9259682 A JP9259682 A JP 9259682A JP 25968297 A JP25968297 A JP 25968297A JP H1197721 A JPH1197721 A JP H1197721A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- light
- film
- photoconductive
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、受光面に入射した
光によって生じる電気抵抗の変化で光を検出する光導電
型受光素子に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a photoconductive photodetector for detecting light based on a change in electrical resistance caused by light incident on a light receiving surface.
【０００２】[0002]
【従来の技術】かかる光導電型受光素子は、受光面に入
射した光によって素子内に生成された電子・正孔対のた
めに電気抵抗が変化する性質を利用して、光を検出する
素子として一般的に知られている。かかる光導電型受光
素子としては、従来からＣｄＳ等の種々の半導体材料を
利用して実用化されており、一般には、当該半導体材料
のバンドギャップのエネルギーに相当する光の波長より
短い波長に対して光感度を有している。2. Description of the Related Art Such a photoconductive light-receiving element detects light by utilizing the property that electric resistance changes due to electron-hole pairs generated in the element by light incident on a light-receiving surface. It is commonly known as As such a photoconductive type light receiving element, various semiconductor materials such as CdS have been conventionally put into practical use, and generally, for a wavelength shorter than the wavelength of light corresponding to the energy of the band gap of the semiconductor material. Light sensitivity.
【０００３】[0003]
【発明が解決しようとする課題】従って、当該半導体材
料のバンドギャップで規定される光の波長より長い波長
の光に対しては光感度を有さず、又、バンドギャップで
規定される光の波長に比較してあまりに短い波長では実
用的な感度を有しない。つまり、従来の光導電型受光素
子では、バンドギャップで規定される光の波長よりも短
波長側の一定範囲において光感度を有するのみであっ
た。本発明は、上記実情に鑑みてなされたものであっ
て、その目的は、より広い範囲で光感度を有する光導電
型受光素子を提供する点にある。Therefore, the semiconductor material has no light sensitivity with respect to light having a wavelength longer than the wavelength of light defined by the band gap of the semiconductor material. At wavelengths that are too short compared to the wavelength, there is no practical sensitivity. That is, the conventional photoconductive light-receiving element has only light sensitivity in a certain range on a shorter wavelength side than the wavelength of light defined by the band gap. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a photoconductive light-receiving element having photosensitivity over a wider range.
【０００４】[0004]
【課題を解決するための手段】上記請求項１記載の構成
を備えることにより、ダイヤモンドの表面に形成された
表面導電層を受光面として光導電型受光素子が構成さ
れ、その表面導電層の電気抵抗の変化によって光を検出
する。ダイヤモンドの表面導電層は、ダイヤモンド膜を
プラズマＣＶＤ法によって作製したときに、ダイヤモン
ド膜の表面に形成されるものであり、又、天然あるいは
高圧合成による単結晶ダイヤモンドの表面を水素プラズ
マにさらすことによっても形成されることが確認されて
いる。このように形成される表面導電層では、種々の測
定結果から、バンドギャップ内に複雑に分布するエネル
ギー準位が存在することが知られている。According to the first aspect of the present invention, there is provided a photoconductive type light receiving element in which a surface conductive layer formed on the surface of diamond is used as a light receiving surface. Light is detected by a change in resistance. The surface conductive layer of diamond is formed on the surface of a diamond film when the diamond film is formed by a plasma CVD method, and is formed by exposing the surface of a single crystal diamond formed by natural or high-pressure synthesis to hydrogen plasma. Has also been found to be formed. In the surface conductive layer formed in this manner, it is known from various measurement results that an energy level that is complicatedly distributed in the band gap exists.
【０００５】本発明の発明者は、このような複雑に分布
するエネルギー準位は、光導電作用に寄与し得るものと
の認識に立ち、ダイヤモンドの表面導電層の光導電効果
の測定を行った。その結果、ダイヤモンドのバンドギャ
ップに相当する波長よりも長波長側で、極めて広い波長
範囲において光感度を有することが確認された。これに
より、ダイヤモンドの表面に形成された表面導電層を受
光面として光導電型受光素子を構成することにより、広
い範囲で光感度を有する光導電型受光素子を提供できる
に至ったのである。The inventor of the present invention has recognized that such a complicatedly distributed energy level can contribute to the photoconductive action, and has measured the photoconductive effect of the surface conductive layer of diamond. . As a result, it was confirmed that the compound has photosensitivity in an extremely wide wavelength range on the longer wavelength side than the wavelength corresponding to the band gap of diamond. As a result, the photoconductive light-receiving element having the photoconductive light-receiving element with the surface conductive layer formed on the surface of the diamond as the light-receiving surface can provide a photoconductive light-receiving element having photosensitivity over a wide range.
【０００６】又、上記請求項２記載の構成を備えること
により、ダイヤモンド多結晶膜の表面に形成された表面
導電層を受光面として光導電型受光素子が構成され、そ
の表面導電層の電気抵抗の変化によって光を検出する。
このように、ダイヤモンド多結晶膜の表面に形成した表
面導電層を利用する場合、ダイヤモンド多結晶膜がアン
ドープのものであっても、又、不純物をドーピングして
ｐ型半導体とした場合であっても光感度を有することを
確認できた。従って、広い波長範囲で光感度を有すると
共に、ダイヤモンド多結晶膜の導電型に制限を受けにく
いものとなって、実施製作面で有利なものとできる。
尚、ダイヤモンド多結晶膜に表面導電層を形成する場
合、後述の単結晶膜の場合と異なり、ダイヤモンド多結
晶膜がアンドープの場合のみならず、不純物をドーピン
グして電気抵抗が低下したｐ型半導体とした場合であっ
ても光感度を有する理由は明確ではないが、ダイヤモン
ド多結晶膜に本来的に存在する結晶欠陥が表面導電層の
エネルギー準位の生成に関与しているものと考えられ
る。In addition, by providing the structure according to the second aspect, a photoconductive type light receiving element is constituted by using the surface conductive layer formed on the surface of the polycrystalline diamond film as a light receiving surface, and the electric resistance of the surface conductive layer is adjusted. The light is detected by the change of.
As described above, when the surface conductive layer formed on the surface of the diamond polycrystalline film is used, even if the diamond polycrystalline film is undoped, or if the impurity is doped into a p-type semiconductor, Was confirmed to have light sensitivity. Therefore, it has light sensitivity in a wide wavelength range and is less likely to be limited by the conductivity type of the polycrystalline diamond film, which is advantageous in terms of practical production.
When a surface conductive layer is formed on a polycrystalline diamond film, unlike the case of a monocrystalline film described later, not only when the polycrystalline diamond film is undoped, but also a p-type semiconductor whose electric resistance is reduced by doping impurities. Although the reason for having the photosensitivity is not clear even in the case of the above, it is considered that crystal defects inherently present in the polycrystalline diamond film are involved in the generation of the energy level of the surface conductive layer.
【０００７】又、上記請求項３記載の構成を備えること
により、ダイヤモンド単結晶基板上に積層されたアンド
ープのダイヤモンド単結晶膜の表面に形成された表面導
電層を受光面として光導電型受光素子が構成され、その
表面導電層の電気抵抗の変化によって光を検出する。つ
まり、本発明の発明者の実験により、ダイヤモンド単結
晶基板上に積層されたｐ型のダイヤモンド単結晶膜の表
面に表面導電層を形成したのでは、実験の結果、十分な
光感度を有しないことを確認でき、逆に、ダイヤモンド
単結晶基板上に積層されたアンドープのダイヤモンド単
結晶膜の表面に表面導電層を形成した場合は光感度を有
することを確認できた。もって、アンドープのダイヤモ
ンド単結晶膜の表面に形成された表面導電層を受光面と
することで、広い範囲で光感度を有する光導電型受光素
子を提供できるに至ったのである。[0007] Further, by providing the structure according to the third aspect, the photoconductive type light receiving element uses the surface conductive layer formed on the surface of the undoped diamond single crystal film laminated on the diamond single crystal substrate as a light receiving surface. Are formed, and light is detected by a change in electric resistance of the surface conductive layer. That is, according to the experiment of the inventor of the present invention, if the surface conductive layer is formed on the surface of the p-type diamond single crystal film laminated on the diamond single crystal substrate, the experiment results in insufficient light sensitivity. Conversely, it was confirmed that when the surface conductive layer was formed on the surface of the undoped diamond single crystal film laminated on the diamond single crystal substrate, it had photosensitivity. Therefore, by using the surface conductive layer formed on the surface of the undoped diamond single crystal film as the light receiving surface, a photoconductive light receiving element having a wide range of photosensitivity can be provided.
【０００８】[0008]
【発明の実施の形態】以下、本発明の光導電型受光素子
の実施の形態を図面に基づいて説明する。光導電型受光
素子ＰＳは、図１に示すように、基板１上にダイヤモン
ド膜２を積層し、そのダイヤモンド膜２の表面に、一対
の櫛形電極３ａ，３ｂを形成して構成され、一対の電極
３ａ，３ｂ間のダイヤモンド膜２表面が受光面ＬＳとな
る。ダイヤモンド膜２を積層する基板１としては、ダイ
ヤモンド単結晶基板を用いる他、Ｓｉ基板等の他の材料
の単結晶又は多結晶基板を用いることができる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the photoconductive light-receiving element of the present invention will be described below with reference to the drawings. As shown in FIG. 1, the photoconductive type light receiving element PS is formed by laminating a diamond film 2 on a substrate 1 and forming a pair of comb-shaped electrodes 3a and 3b on the surface of the diamond film 2. The surface of the diamond film 2 between the electrodes 3a and 3b becomes the light receiving surface LS. As the substrate 1 on which the diamond film 2 is to be laminated, a diamond single crystal substrate or a single crystal or polycrystalline substrate of another material such as a Si substrate can be used.
【０００９】ダイヤモンド膜２は、原料ガスとしてＣＨ
4 を用いるプラズマＣＶＤ装置を用いて基板１上に積層
され、後述する水素化処理等を適宜行った後、フォトリ
ソグラフ技術等により櫛形電極３ａ，３ｂを形成する。
このようにダイヤモンド膜２を積層する場合において、
基板１としてダイヤモンド単結晶基板を用いるとダイヤ
モンド膜２はダイヤモンド単結晶膜となり、基板１とし
てＳｉ基板等のダイヤモンド単結晶基板以外のものを用
いるとダイヤモンド膜２はダイヤモンド多結晶膜とな
る。又、上述のようにプラズマＣＶＤ装置を用いてダイ
ヤモンド膜２を積層することにより、積層中の水素プラ
ズマの影響でダイヤモンド膜２の表面にいわゆる表面導
電層が形成されるのであるが、この表面導電層をさらに
確実に形成するため、ダイヤモンド膜２の表面を水素プ
ラズマにさらす水素化処理を適宜行うのである。従っ
て、ダイモンド膜２の表面、すなわち、ダイヤモンドの
表面に形成された表面導電層にて、受光面ＬＳが構成さ
れている。尚、基板１がＳｉ基板等のようにウェハ状態
で供給可能なものは、ウェハー状態でダイヤモンド膜２
を積層し、櫛形電極３ａ，３ｂ形成後に、図１に示す状
態に素子分離を行う。The diamond film 2 is made of CH as a source gas.
After being stacked on the substrate 1 by using a plasma CVD apparatus using 4 and appropriately performing a hydrogenation treatment described later, the comb-shaped electrodes 3a and 3b are formed by photolithography technology or the like.
When the diamond film 2 is laminated as described above,
When a diamond single crystal substrate is used as the substrate 1, the diamond film 2 becomes a diamond single crystal film, and when a substrate other than a diamond single crystal substrate such as a Si substrate is used, the diamond film 2 becomes a polycrystalline diamond film. By laminating the diamond film 2 using the plasma CVD apparatus as described above, a so-called surface conductive layer is formed on the surface of the diamond film 2 under the influence of the hydrogen plasma during the lamination. In order to form the layer more reliably, a hydrogenation treatment for exposing the surface of the diamond film 2 to hydrogen plasma is appropriately performed. Therefore, the light receiving surface LS is constituted by the surface of the diamond film 2, that is, the surface conductive layer formed on the surface of the diamond. In the case where the substrate 1 can be supplied in a wafer state, such as a Si substrate, the diamond film 2
Are stacked, and after the comb-shaped electrodes 3a and 3b are formed, element isolation is performed in the state shown in FIG.
【００１０】次に、種々の条件で作製した光導電型受光
素子ＰＳの特性について具体的に説明する。先ず、基板
１としてＳｉ基板（単結晶）を用い、ダイヤモンド膜２
を、アンドープのダイヤモンド多結晶膜並びにｐ型のダ
イヤモンド多結晶膜として作製した場合について説明す
る。ダイヤモンド膜２をアンドープのダイヤモンド多結
晶膜として作製した光導電型受光素子ＰＳの特性を図２
に示す。図２に特性を示す光導電型受光素子ＰＳは、上
記水素化処理を施している。Next, the characteristics of the photoconductive type light receiving element PS manufactured under various conditions will be specifically described. First, an Si substrate (single crystal) was used as a substrate 1 and a diamond film 2
Are produced as an undoped diamond polycrystalline film and a p-type diamond polycrystalline film. FIG. 2 shows the characteristics of a photoconductive light-receiving element PS in which the diamond film 2 was formed as an undoped diamond polycrystalline film.
Shown in The photoconductive light-receiving element PS having the characteristics shown in FIG. 2 has been subjected to the above-described hydrogenation treatment.
【００１１】図２（イ）及び（ロ）は、受光面ＬＳに対
して光を照射する状態としない状態の夫々で、一対の櫛
形電極３ａ，３ｂ間の電気抵抗を測定し、受光面ＬＳに
光を照射したときの表面抵抗の変化（ΔＲ）の、光を照
射しないときの抵抗値（Ｒ）に対する割合が、光の波長
に対してどのように変化するかを示す、いわゆる分光感
度に相当するものである。但し、測定装置の都合上、受
光面ＬＳに照射する光の波長を変化させるにあたって、
図２（イ）は、図８（イ）に示す発光波長分布を有する
ハロゲンランプを光源として、その光源からの出射光
を、特定波長より短波長側の光をカットするカットフィ
ルタを通過させて、受光面ＬＳに照射し、そのカットフ
ィルタの前記特定波長より長波長側の光成分の総量に対
する光感度を、前記特定波長が異なるカットフィルタを
適宜交換しつつ測定することによって、分光感度に相当
する特定を測定している。従って、縦軸の光感度（ΔＲ
／Ｒ）は、長波長側から短波長側に向けて積算されてい
くことになる。以下、便宜上、この測定手法を「カット
フィルタによる分光感度測定」と称する。FIGS. 2 (a) and 2 (b) show a state where the light receiving surface LS is not irradiated with light and a state where the light is not irradiated, respectively, and the electric resistance between the pair of comb electrodes 3a and 3b is measured. The so-called spectral sensitivity indicates how the ratio of the change in surface resistance (ΔR) when light is irradiated to the resistance value (R) when light is not irradiated changes with respect to the wavelength of light. It is equivalent. However, for changing the wavelength of the light irradiated on the light receiving surface LS,
FIG. 2A shows a case where a halogen lamp having the emission wavelength distribution shown in FIG. 8A is used as a light source, and light emitted from the light source passes through a cut filter that cuts light having a shorter wavelength than a specific wavelength. Irradiating the light-receiving surface LS, and measuring the light sensitivity of the cut filter with respect to the total amount of light components on the longer wavelength side than the specific wavelength while appropriately replacing the cut filters having different specific wavelengths, thereby corresponding to the spectral sensitivity. You are measuring certain. Therefore, the light sensitivity (ΔR
/ R) is integrated from the long wavelength side to the short wavelength side. Hereinafter, for convenience, this measurement method is referred to as “spectral sensitivity measurement using a cut filter”.
【００１２】又、図２（ロ）は、図８（ロ）に示す発光
波長分布を有する超高圧水銀ランプを光源として、その
光源からの出射光を分光器により分光して受光面ＬＳに
照射し、その光感度を測定したもので、一般的な分光感
度を示すものである。以下、便宜上、この測定手法を
「通常の分光感度測定」と称して、上記の「カットフィ
ルタによる分光感度測定」と区別する。尚、図８（ロ）
の発光波長分布から明らかなように、超高圧水銀ランプ
は複数の特定の波長において発光強度が大となってお
り、それに応じて、図２（ロ）の特性にも複数のピーク
が存在している。FIG. 2B shows an ultra-high pressure mercury lamp having the emission wavelength distribution shown in FIG. 8B as a light source, and radiates the light emitted from the light source with a spectroscope to irradiate a light receiving surface LS. The light sensitivity is measured, and indicates a general spectral sensitivity. Hereinafter, for convenience, this measurement method is referred to as “normal spectral sensitivity measurement” and is distinguished from the above-described “spectral sensitivity measurement using a cut filter”. In addition, FIG.
As can be seen from the emission wavelength distribution, the ultra-high pressure mercury lamp has a large emission intensity at a plurality of specific wavelengths, and accordingly, the characteristic in FIG. I have.
【００１３】使用する光源の発光波長分布との関係上、
前記カットフィルタによる分光感度測定では、主に、５
００〜１０００ｎｍの範囲での光感度の有無を確認で
き、前記通常の分光感度測定では、主に、２５０〜６０
０ｎｍの範囲での光感度の有無を確認できる。図２
（イ）及び図２（ロ）の測定結果から明らかなように、
ダイヤモンド膜２をアンドープのダイヤモンド多結晶膜
として作製した光導電型受光素子ＰＳでは、少なくと
も、２００ｎｍ〜１０００ｎｍの極めて広い波長範囲で
光感度を有している。In relation to the emission wavelength distribution of the light source used,
In the spectral sensitivity measurement by the cut filter, mainly 5
The presence or absence of light sensitivity in the range of 00 to 1000 nm can be confirmed.
The presence or absence of photosensitivity in the range of 0 nm can be confirmed. FIG.
As is clear from the measurement results of (a) and FIG. 2 (b),
The photoconductive light-receiving element PS in which the diamond film 2 is formed as an undoped polycrystalline diamond film has photosensitivity at least in an extremely wide wavelength range of 200 nm to 1000 nm.
【００１４】次に、ダイヤモンド膜２をｐ型のダイヤモ
ンド多結晶膜として作製した光導電型受光素子ＰＳの特
性を図３に示す。図３に特性を示す光導電型受光素子Ｐ
Ｓも、上記水素化処理を施している。尚、ｐ型の不純物
としてはホウ素を使用している。図３（イ）は、前記カ
ットフィルタによる分光感度測定の測定結果を示し、図
３（ロ）は、前記通常の分光感度測定の測定結果を示し
ている。図３（イ）及び図３（ロ）の測定結果から明ら
かなように、ダイヤモンド膜２をｐ型のダイヤモンド多
結晶膜として作製した光導電型受光素子ＰＳも、少なく
とも、２００ｎｍ〜１０００ｎｍの極めて広い波長範囲
で光感度を有している。FIG. 3 shows the characteristics of the photoconductive light-receiving element PS in which the diamond film 2 is formed as a p-type diamond polycrystalline film. The photoconductive light-receiving element P whose characteristics are shown in FIG.
S is also subjected to the above hydrogenation treatment. Note that boron is used as the p-type impurity. FIG. 3A shows the measurement result of the spectral sensitivity measurement using the cut filter, and FIG. 3B shows the measurement result of the normal spectral sensitivity measurement. As is clear from the measurement results shown in FIGS. 3A and 3B, the photoconductive light-receiving element PS in which the diamond film 2 is formed as a p-type diamond polycrystalline film is also at least extremely wide from 200 nm to 1000 nm. It has photosensitivity in the wavelength range.
【００１５】図４は、図３と同様にダイヤモンド膜２を
ｐ型のダイヤモンド多結晶膜として作製した光導電型受
光素子ＰＳの特性を示すが、図３のものと異なり、水素
化処理は行わず、その代わりに、酸素雰囲気中で１０分
間４５０℃に加熱する酸化処理を行ったものである。こ
の酸化処理は、一般的には、一旦ダイヤモンド膜２の表
面に形成された表面導電層を取り除いてしまう方向に作
用するのであるが、図４（イ）の前記カットフィルタに
よる分光感度測定の測定結果、並びに、図４（ロ）の前
記通常の分光感度測定の測定結果から明らかなように、
水素化処理を行った図３のものと同様に、２００ｎｍ〜
１０００ｎｍの極めて広い波長範囲で光感度を有してい
る。FIG. 4 shows the characteristics of the photoconductive light-receiving element PS in which the diamond film 2 is formed as a p-type diamond polycrystalline film in the same manner as in FIG. Instead, an oxidation treatment of heating to 450 ° C. for 10 minutes in an oxygen atmosphere was performed. This oxidation treatment generally acts in a direction in which the surface conductive layer once formed on the surface of the diamond film 2 is removed. However, the measurement of the spectral sensitivity measurement by the cut filter shown in FIG. As is clear from the results and the measurement results of the ordinary spectral sensitivity measurement shown in FIG.
As in the case of FIG.
It has photosensitivity in an extremely wide wavelength range of 1000 nm.
【００１６】次に、基板１としてダイヤモンド単結晶基
板を用い、ダイヤモンド膜２を、アンドープのダイヤモ
ンド単結晶膜として作製した場合について説明する。ダ
イヤモンド膜２をアンドープのダイヤモンド単結晶膜と
して作製した光導電型受光素子ＰＳの特性を図５及び図
６に示す。図５に特性を示す光導電型受光素子ＰＳと、
図６に特性を示す光導電型受光素子ＰＳとは、材料ガス
であるＣＨ4の混合比が異なり、前者は１％、後者は２
％として作製している。図５（イ）及び図６（イ）は、
前記カットフィルタによる分光感度測定の測定結果を示
し、図５（ロ）及び図６（ロ）は、前記通常の分光感度
測定の測定結果を示している。図５及び図６の測定結果
から明らかなように、ダイヤモンド膜２をアンドープの
ダイヤモンド単結晶膜として作製した光導電型受光素子
ＰＳも、ＣＨ4 の混合比を１％とした場合であっても、
又、２％とした場合であっても、少なくとも、２００ｎ
ｍ〜１０００ｎｍの極めて広い波長範囲で光感度を有し
ている。Next, a case where a diamond single crystal substrate is used as the substrate 1 and the diamond film 2 is formed as an undoped diamond single crystal film will be described. 5 and 6 show the characteristics of the photoconductive light-receiving element PS in which the diamond film 2 is formed as an undoped diamond single crystal film. A photoconductive light-receiving element PS whose characteristics are shown in FIG.
6 is different from the photoconductive light-receiving element PS whose characteristics are shown in FIG. 6 in the mixing ratio of CH 4 which is a material gas.
%. FIGS. 5 (a) and 6 (a)
FIG. 5 (b) and FIG. 6 (b) show the measurement results of the normal spectral sensitivity measurement using the cut filter. As is clear from the measurement results of FIGS. 5 and 6, the photoconductive light-receiving element PS in which the diamond film 2 was formed as an undoped diamond single crystal film also has a CH 4 mixing ratio of 1%. ,
In addition, even if it is 2%, at least 200 n
It has photosensitivity in an extremely wide wavelength range from m to 1000 nm.
【００１７】尚、上記のようにダイヤモンド膜２をアン
ドープのダイヤモンド単結晶膜として作製した場合と異
なり、ダイヤモンド膜２を、不純物としてホウ素をドー
ピングしてｐ型のダイヤモンド単結晶膜として作製した
場合には、図７（イ）の前記カットフィルタによる分光
感度測定の測定結果、並びに、図７（ロ）の前記通常の
分光感度測定の測定結果のように、光感度を有しない。
図７に示す特性を有する素子は、上記水素化処理を施し
たものであるが、水素化処理の代わりに上記酸化処理を
施しても、図７の特性と同様に光感度を有しない。Unlike the case where the diamond film 2 is formed as an undoped diamond single crystal film as described above, the diamond film 2 is formed as a p-type diamond single crystal film by doping boron as an impurity. Does not have light sensitivity like the measurement result of the spectral sensitivity measurement by the cut filter in FIG. 7A and the measurement result of the normal spectral sensitivity measurement in FIG. 7B.
The element having the characteristics shown in FIG. 7 has been subjected to the above-described hydrogenation treatment. However, even if the above-described oxidation treatment is performed instead of the hydrogenation treatment, the element does not have photosensitivity similarly to the characteristics shown in FIG.
【００１８】〔別実施形態〕以下、別実施形態を列記す
る。 上記実施の形態では、基板１上に形成したダイヤモ
ンド膜２の表面に形成される表面導電層にて受光面ＬＳ
が構成されているが、単結晶又は多結晶のダイヤモンド
基板の表面に上記水素化処理を施して表面導電層を形成
し、ダイヤモンド基板自体に形成された表面導電層にて
受光面ＬＳを構成しても良い。 上記実施の形態では、ダイヤモンド膜２をダイヤモ
ンド多結晶膜として作製するときに、基板１としてＳｉ
単結晶基板を用いているが、Ｓｉ多結晶基板を用いても
良いし、Ｓｉに限らず、ＧａＡｓ等の他の材料の基板を
用いても良い。 上記実施の形態では、光導電型受光素子ＰＳの電極
を、一対の櫛形電極３ａ，３ｂとしているが、例えば平
面視で略長方形状の電極を二つ並べる等、電極の具体形
状は種々変更可能である。[Other Embodiments] Hereinafter, other embodiments will be listed. In the above embodiment, the light receiving surface LS is formed by the surface conductive layer formed on the surface of the diamond film 2 formed on the substrate 1.
The surface of a single crystal or polycrystalline diamond substrate is subjected to the above hydrogenation treatment to form a surface conductive layer, and the light receiving surface LS is formed by the surface conductive layer formed on the diamond substrate itself. May be. In the above embodiment, when the diamond film 2 is formed as a polycrystalline diamond film, the substrate 1 is made of Si.
Although a single crystal substrate is used, a polycrystalline Si substrate may be used, and a substrate made of another material such as GaAs, not limited to Si, may be used. In the above embodiment, the electrodes of the photoconductive type light receiving element PS are a pair of comb-shaped electrodes 3a and 3b, but the specific shape of the electrodes can be variously changed, for example, two substantially rectangular electrodes are arranged in plan view. It is.
【図１】本発明の実施の形態にかかる光導電型受光素子
の概略斜視図FIG. 1 is a schematic perspective view of a photoconductive light receiving element according to an embodiment of the present invention.
【図２】本発明の実施の形態にかかる光導電型受光素子
の特性を示す図FIG. 2 is a diagram showing characteristics of a photoconductive light-receiving element according to an embodiment of the present invention.
【図３】本発明の実施の形態にかかる光導電型受光素子
の特性を示す図FIG. 3 is a diagram showing characteristics of the photoconductive light-receiving element according to the embodiment of the present invention;
【図４】本発明の実施の形態にかかる光導電型受光素子
の特性を示す図FIG. 4 is a diagram showing characteristics of the photoconductive light-receiving element according to the embodiment of the present invention;
【図５】本発明の実施の形態にかかる光導電型受光素子
の特性を示す図FIG. 5 is a diagram showing characteristics of the photoconductive light-receiving element according to the embodiment of the present invention;
【図６】本発明の実施の形態にかかる光導電型受光素子
の特性を示す図FIG. 6 is a diagram showing characteristics of the photoconductive light-receiving element according to the embodiment of the present invention;
【図７】比較対象のための素子の特性を示す図FIG. 7 is a diagram showing characteristics of an element for comparison.
【図８】本発明の実施の形態にかかる測定に用いた光源
の特性を示す図FIG. 8 is a diagram showing characteristics of a light source used for measurement according to the embodiment of the present invention.
２ ダイヤモンド ＬＳ 受光面 2 Diamond LS light receiving surface
Claims (3)
抵抗の変化で光を検出する光導電型受光素子であって、 前記受光面が、ダイヤモンドの表面に形成された表面導
電層にて構成されている光導電型受光素子。1. A photoconductive light-receiving element for detecting light by a change in electric resistance caused by light incident on a light-receiving surface, wherein the light-receiving surface is constituted by a surface conductive layer formed on a diamond surface. Photoconductive light receiving element.
晶膜である請求項１記載の光導電型受光素子。2. The photoconductive light-receiving element according to claim 1, wherein said diamond is a polycrystalline diamond film.
晶基板上に積層されたアンドープのダイヤモンド単結晶
膜である請求項１記載の光導電型受光素子。3. The photoconductive photodetector according to claim 1, wherein said diamond is an undoped diamond single crystal film laminated on a diamond single crystal substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9259682A JPH1197721A (en) | 1997-09-25 | 1997-09-25 | Photoconductive light receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9259682A JPH1197721A (en) | 1997-09-25 | 1997-09-25 | Photoconductive light receiving element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1197721A true JPH1197721A (en) | 1999-04-09 |
Family
ID=17337456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9259682A Pending JPH1197721A (en) | 1997-09-25 | 1997-09-25 | Photoconductive light receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1197721A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005310964A (en) * | 2004-04-20 | 2005-11-04 | National Institute For Materials Science | Diamond ultraviolet phototransistor |
| JP2005310963A (en) * | 2004-04-20 | 2005-11-04 | National Institute For Materials Science | Diamond ultraviolet photosensor element |
| WO2007015431A1 (en) * | 2005-08-01 | 2007-02-08 | National Institute For Materials Science | Diamond uv-ray sensor |
| JP2007066976A (en) * | 2005-08-29 | 2007-03-15 | National Institute For Materials Science | Diamond ultraviolet sensor |
| WO2009099233A1 (en) | 2008-02-07 | 2009-08-13 | National Institute For Materials Science | Diamond uv sensor element and manufacturing method thereof, uv sensor device, diamond single crystal processing method |
| WO2010038785A1 (en) * | 2008-09-30 | 2010-04-08 | 国立大学法人岡山大学 | Photosensor and method for manufacturing the photosensor |
| US7768091B2 (en) | 2004-11-25 | 2010-08-03 | National Institute For Materials Science | Diamond ultraviolet sensor |
| JP2012508459A (en) * | 2008-11-12 | 2012-04-05 | テレフオンアクチーボラゲット エル エム エリクソン（パブル） | Improved large area photodetector |
-
1997
- 1997-09-25 JP JP9259682A patent/JPH1197721A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005310963A (en) * | 2004-04-20 | 2005-11-04 | National Institute For Materials Science | Diamond ultraviolet photosensor element |
| JP2005310964A (en) * | 2004-04-20 | 2005-11-04 | National Institute For Materials Science | Diamond ultraviolet phototransistor |
| US7768091B2 (en) | 2004-11-25 | 2010-08-03 | National Institute For Materials Science | Diamond ultraviolet sensor |
| WO2007015431A1 (en) * | 2005-08-01 | 2007-02-08 | National Institute For Materials Science | Diamond uv-ray sensor |
| JPWO2007015431A1 (en) * | 2005-08-01 | 2009-02-19 | 独立行政法人物質・材料研究機構 | Diamond ultraviolet light sensor |
| JP4650491B2 (en) * | 2005-08-01 | 2011-03-16 | 独立行政法人物質・材料研究機構 | Diamond ultraviolet light sensor |
| US7884372B2 (en) | 2005-08-01 | 2011-02-08 | National Institute For Materials Science | Diamond UV-Ray sensor |
| JP2007066976A (en) * | 2005-08-29 | 2007-03-15 | National Institute For Materials Science | Diamond ultraviolet sensor |
| WO2009099233A1 (en) | 2008-02-07 | 2009-08-13 | National Institute For Materials Science | Diamond uv sensor element and manufacturing method thereof, uv sensor device, diamond single crystal processing method |
| US8435597B2 (en) | 2008-02-07 | 2013-05-07 | National Institute For Materials Science | Diamond UV-sensor element and manufacturing method thereof, UV-sensor unit, and method of treating diamond single crystal |
| WO2010038785A1 (en) * | 2008-09-30 | 2010-04-08 | 国立大学法人岡山大学 | Photosensor and method for manufacturing the photosensor |
| JP5360837B2 (en) * | 2008-09-30 | 2013-12-04 | 国立大学法人 岡山大学 | Optical sensor and manufacturing method thereof |
| JP2012508459A (en) * | 2008-11-12 | 2012-04-05 | テレフオンアクチーボラゲット エル エム エリクソン（パブル） | Improved large area photodetector |
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