JPH1174561A - Photoelectric device and its forming method - Google Patents

Photoelectric device and its forming method

Info

Publication number
JPH1174561A
JPH1174561A JP23472897A JP23472897A JPH1174561A JP H1174561 A JPH1174561 A JP H1174561A JP 23472897 A JP23472897 A JP 23472897A JP 23472897 A JP23472897 A JP 23472897A JP H1174561 A JPH1174561 A JP H1174561A
Authority
JP
Japan
Prior art keywords
package
mold member
opening
photoelectric
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23472897A
Other languages
Japanese (ja)
Other versions
JP3228321B2 (en
Inventor
Akimasa Sakano
顕正 阪野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP23472897A priority Critical patent/JP3228321B2/en
Publication of JPH1174561A publication Critical patent/JPH1174561A/en
Application granted granted Critical
Publication of JP3228321B2 publication Critical patent/JP3228321B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

PROBLEM TO BE SOLVED: To provide a photoelectric device of stable light-electricity conversion characteristics independent of usage environment, relating to a photoelectric device, while size-reduction is possible, which is utilized with an indicator, a display, a photo coupler, a back light source, an optical printer head, etc. SOLUTION: A photoelectric device comprises a package 101 provided with an opening part, a first and a second external electrodes 106 which provide conduction between the inside of opening of the package 101 and the outside part, a photoelectric element 105 which, allocated inside the opening part of the package 101, is electrically connected to the first and the second outside electrodes 106, respectively, and a mold member 103 which is, while coating the photoelectric element 105 inside the opening part of the package 101, allocated lower than the surface of the package 101, and the mold member 103 is of silicon resin while the package 101 comprises a holding means 102 for holding the mold member 103.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、各種インジケータ、光
センサー、ディスプレイ、ホトカプラ、バックライト光
源や光プリンタヘッドなどに利用される小型化可能な光
電装置に係わり、特に、使用環境によらず安定した光電
変換特性を有する光電装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a compact photoelectric device used for various indicators, optical sensors, displays, photocouplers, backlight light sources, optical printer heads, and the like. The present invention relates to a photoelectric device having improved photoelectric conversion characteristics.

【0002】[0002]

【従来技術】光電装置の一種であるLEDを用いた発光
装置は、電球など比べ小型化可能であり振動に強くon/o
ff時の発光特性に優れることなどから種々の分野に応用
され始めている。発光装置としてチップタイプLEDの
模式的断面図を図4及び図5に示す。LEDチップ20
5は、半田付け時や搬送時などに扱い易くさせるため各
種樹脂やセラミックスなど材質で形成されたパッケージ
201で保護されている。パッケージ201は、内部に
LEDチップ205が配置可能な開口部があり、パッケ
ージに設けられた外部電極206を通して外部から内部
に配置されたLEDチップ205に電力が供給できるよ
う電気的に接続されている。
2. Description of the Related Art A light emitting device using an LED, which is a type of photoelectric device, can be made smaller than a light bulb or the like, and is more resistant to vibration.
It has begun to be applied to various fields due to its excellent light emission characteristics at the time of ff. FIGS. 4 and 5 are schematic cross-sectional views of a chip type LED as a light emitting device. LED chip 20
5 is protected by a package 201 made of a material such as various resins or ceramics so as to be easily handled at the time of soldering or transportation. The package 201 has an opening inside which the LED chip 205 can be arranged, and is electrically connected so that power can be supplied from the outside to the LED chip 205 arranged inside through an external electrode 206 provided in the package. .

【0003】具体的には、LEDチップ205はパッケ
ージ201開口部内にAgペースト208などでダイボ
ンドされている。また、ダイボンドされたLEDチップ
205は、Agペーストを介してパッケージに設けられ
た外部電極206と電気的に接続されている。LEDチ
ップの他の電極は、パッケージに設けられた他の外部電
極と金線207によりワイヤーボンディングされてい
る。
Specifically, the LED chip 205 is die-bonded in the opening of the package 201 with an Ag paste 208 or the like. The die-bonded LED chip 205 is electrically connected to an external electrode 206 provided on the package via an Ag paste. The other electrode of the LED chip is wire-bonded to another external electrode provided on the package by a gold wire 207.

【0004】塵芥などからLEDチップを保護するため
パッケージ開口部内に透光性モールド部材203が設け
られる。透光性モールド部材203は、パッケージ20
1開口部内に熱硬化性のエポキシ樹脂などを充填し加熱
硬化させることにより比較的簡単に形成することができ
る。形成されたモールド部材203は、LEDチップ2
05やパッケージ201などと強固に密着させる働きも
する。これにより小型化可能な光電装置とすることがで
きる。
A light-transmitting mold member 203 is provided in the package opening to protect the LED chip from dust and the like. The translucent mold member 203 is
It can be formed relatively easily by filling a thermosetting epoxy resin or the like in one opening and heat-curing. The formed mold member 203 is the LED chip 2
05 and the package 201. Thus, a photoelectric device that can be reduced in size can be obtained.

【0005】放熱性や強度を考慮してパッケージ201
の材料にセラミックやFRPなどの材料を用いた場合、
過度の熱サイクル試験や半田付けなど高温に晒されると
光電特性が低下する或いは、発光や受光特性が機能しな
い場合がある。これは、車載用など温度サイクルなどの
より厳しい環境下においても高信頼性が求められている
現在においては特に大きな問題となる。
In consideration of heat dissipation and strength, the package 201
If a material such as ceramic or FRP is used for the material,
When exposed to a high temperature such as an excessive heat cycle test or soldering, the photoelectric characteristics may be reduced, or the light emission or light reception characteristics may not function. This is a particularly serious problem at present when high reliability is required even in a severe environment such as a temperature cycle such as for a vehicle.

【0006】このような問題の理由は定かではないが、
モールド部材201とパッケージの熱膨張、弾性率が大
きく寄与するものと考えらる。特に、パッケージ201
材料の熱膨張率がモールド部材203よりも小さく且つ
強度が高いとLEDチップ205や導電性ワイヤー20
7などに過度に力が働く。そのため、LEDチップ20
5と外部電極206とを接続させる導電性ペースト20
8のクラックや導電性ワイヤー207の断線などにより
電気的特性が低下する或いは非発光になると考えられ
る。これらは、弾性率の高い材料を利用することにより
解決することができる。
Although the reason for such a problem is not clear,
It is considered that the thermal expansion and the elastic modulus of the mold member 201 and the package greatly contribute. In particular, package 201
If the coefficient of thermal expansion of the material is smaller than the mold member 203 and the strength is higher, the LED chip 205 or the conductive wire 20 may be used.
Excessive force works on 7 etc. Therefore, the LED chip 20
5 for connecting conductive paste to external electrode 206
It is considered that the electrical characteristics are reduced or the light is not emitted due to the crack of No. 8 or the disconnection of the conductive wire 207. These can be solved by using a material having a high elastic modulus.

【0007】一方、モールド部材は、上記特性を満たし
つつ、(1)透光性を有すること、(2)耐候性に優れ
ていること、(3)密着性に優れていることなど他の特
性を満足させる必要もある。現在のところ1種類でこれ
ら全ての特性を満足する樹脂は存在しない。本発明者は
これらの特性を比較的満足するモールド部材の材料とし
て、シリコーン樹脂を選択することができるを見いだし
た。
On the other hand, the mold member satisfies the above-mentioned characteristics and has other characteristics such as (1) having a light-transmitting property, (2) being excellent in weather resistance, and (3) being excellent in adhesion. Needs to be satisfied. At present, there is no resin that satisfies all these properties by itself. The present inventor has found that a silicone resin can be selected as a material for a mold member that relatively satisfies these characteristics.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、シリコ
ーン樹脂は、粘着性を持つためゴミなどの付着を生じる
が、パッケージとの接着性が十分でない。また、表面張
力によりシリコーン樹脂がパッケージ側壁を這い上がる
傾向にある。パッケージの表面側にもモールド部材が這
い上がるとモールド部材が外部のものと接触し外力がか
かりやすくなる。はみ出たモールド部材は、ゴミの付着
が生じると共に外部のものに引っかかりやすい。例え
ば、発光特性などを分類する選別機や基板上の他の部品
に接触する或いは引っかかるなどして比較的容易にパッ
ケージからモールド部材が剥がれるという問題を有す
る。使用環境の広がりに伴いより信頼性の向上が求めら
れる今日においては、上記構成の光電装置では十分でな
く、より信頼性の高い光電装置が求められている。した
がって、本発明は、より信頼性の高い光電装置を提供す
ることにある。
However, the silicone resin has an adhesive property and causes adhesion of dust and the like, but does not have sufficient adhesiveness to the package. Also, the silicone resin tends to crawl up the package side wall due to surface tension. When the mold member crawls also on the surface side of the package, the mold member comes into contact with an external one and an external force is easily applied. The protruding mold member is liable to be attached to dust and to be easily caught by an external member. For example, there is a problem that the mold member is relatively easily peeled off from the package by contacting or being caught with a sorter for classifying light emission characteristics or other components on the substrate. In today's day when reliability is required to be further improved with the expansion of the use environment, the photoelectric device having the above configuration is not sufficient, and a more reliable photoelectric device is required. Therefore, an object of the present invention is to provide a more reliable photoelectric device.

【0009】[0009]

【課題を解決するための手段】本発明は、開口部を有す
るパッケージと、該パッケージの開口部内と外部とを導
通可能な第1及び第2の外部電極と、パッケージ開口部
内に配置されると共に第1及び第2の外部電極とそれぞ
れ電気的に接続された光電素子と、パッケージ開口部内
で光電素子を被覆すると共にパッケージ開口部表面より
低く配置されたモールド部材と、を有する光電装置に関
するものである。特に、本発明の光電装置においては、
モールド部材がシリコーン樹脂であると共に、パッケー
ジにモールド部材を保持する保持手段を有する。
SUMMARY OF THE INVENTION The present invention provides a package having an opening, first and second external electrodes capable of conducting between the inside of the opening of the package and the outside, and disposed in the opening of the package. The present invention relates to a photoelectric device having a photoelectric element electrically connected to first and second external electrodes, respectively, and a mold member that covers the photoelectric element in the package opening and is disposed lower than the surface of the package opening. is there. In particular, in the photoelectric device of the present invention,
The mold member is a silicone resin, and has a holding means for holding the mold member in a package.

【0010】本発明の請求項2に記載の光電装置は、保
持手段として光電素子が配置された開口部内部よりも狭
いパッケージ表面側の少なくとも一端部を用いたもので
ある。
The photoelectric device according to the second aspect of the present invention uses at least one end on the package surface side narrower than the inside of the opening where the photoelectric element is arranged as the holding means.

【0011】本発明の請求項3に記載の光電装置は、パ
ッケージがセラミックであると共にパッケージから露出
したモールド部材が発光観測面側から見て窪んだもので
ある。
In the photoelectric device according to a third aspect of the present invention, the package is made of ceramic and the mold member exposed from the package is depressed when viewed from the light emission observation surface side.

【0012】本発明の請求項4に記載の光電装置は、光
電素子が発光素子であると共にモールド部材中に蛍光体
を含むものである。
According to a fourth aspect of the present invention, in the photoelectric device, the photoelectric element is a light-emitting element and the mold member contains a phosphor.

【0013】本発明の請求項5に記載の光電装置の形成
方法は、開口部を有し内部に少なくとも第1及び第2の
外部電極が配置されたパッケージと、第1及び第2の外
部電極とそれぞれ電気的に接続されると共にパッケージ
開口部内に設けられた光電素子と、パッケージ開口部内
に前記光電素子を被覆するモールド部材と、を有する光
電装置の形成方法である。特に、パッケージ表面側の少
なくとも一端部が光電素子が配置された開口部内部より
も狭い開口部内にシリコーン樹脂を流し込みむ工程と、
シリコーン樹脂を加熱硬化させモールド部材を形成させ
る工程と、有する光電装置の形成方法である。
According to a fifth aspect of the present invention, there is provided a method for forming a photoelectric device, comprising: a package having an opening and at least a first and a second external electrode disposed therein; and a first and a second external electrode. And a mold member that is electrically connected to each other and is provided in the package opening, and a mold member that covers the photoelectric element in the package opening. In particular, a step of pouring the silicone resin into a narrower opening than at least one end of the package surface side where the photoelectric element is arranged;
A step of heating and curing a silicone resin to form a mold member; and a method of forming an optoelectronic device.

【0014】[0014]

【発明の実施の形態】本発明者は種々の実験の結果、モ
ールド部材にシリコーン樹脂を選択すると共にパッケー
ジを特定形状とすることにより信頼性を飛躍的に向上さ
せ得ることを見いだし本発明を成すに到った。
BEST MODE FOR CARRYING OUT THE INVENTION As a result of various experiments, the inventor of the present invention has found that the reliability can be significantly improved by selecting a silicone resin for a mold member and forming a package into a specific shape. Reached.

【0015】即ち、モールド部材にシリコーン樹脂を選
択することにより、光電装置の昇温時におけるLEDチ
ップと外部電極とを接続させる導電性ペーストのクラッ
クや導電性ワイヤーの断線などにより電気的特性が低下
する或いは非発光などを抑制しつつ、シリコーン樹脂の
低接着性をパッケージ形状で改善させたものである。以
下、本発明の一例を図1に示す。図1は、光電素子に受
光素子を用いた光センサーの模式的断面図を示す。
That is, by selecting a silicone resin for the mold member, the electrical characteristics are deteriorated due to cracks in the conductive paste for connecting the LED chip and the external electrodes and disconnection of the conductive wires when the temperature of the photoelectric device is raised. In this case, the low adhesiveness of the silicone resin is improved in the form of a package while suppressing light emission or non-emission. Hereinafter, an example of the present invention is shown in FIG. FIG. 1 is a schematic cross-sectional view of an optical sensor using a light receiving element as a photoelectric element.

【0016】パッケージは、一対のリードフレームを外
部電極として配置させたガラス繊維入りポリカーボネー
ト樹脂を用いた。光電素子として硝子基板上にプラズマ
CVD法でアモルファスシリコンを堆積させた。光電素
子は、N型シリコンに一対の電極が設けられている。光
電素子上の電極と外部電極とをそれそれAgペーストを
用いて電気的に接続させた。こうして受光素子が配置さ
れたパッケージ内にシリコーン樹脂を流し込むことによ
り光電装置を形成させた。パッケージの開口部表面は、
受光素子が配置された底面よりも狭くなっている。パッ
ケージ開口部側表面の高さよりもシリコーン樹脂表面は
下側に配置されている。
The package used was a polycarbonate resin containing glass fibers in which a pair of lead frames were arranged as external electrodes. Amorphous silicon was deposited as a photoelectric element on a glass substrate by a plasma CVD method. The photoelectric element has a pair of electrodes provided on N-type silicon. The electrodes on the photoelectric element and the external electrodes were electrically connected to each other using an Ag paste. Thus, the photoelectric device was formed by pouring the silicone resin into the package in which the light receiving elements were arranged. The surface of the package opening is
It is narrower than the bottom surface where the light receiving element is arranged. The surface of the silicone resin is disposed below the height of the surface on the package opening side.

【0017】光電装置をこのような構成とすることによ
り、温度サイクルに強くすると共に外部環境から光電素
子を保護することができる。以下、本発明の各構成につ
いて、詳述する。
[0017] With the photoelectric device having such a structure, the photoelectric device can be protected from an external environment while being resistant to a temperature cycle. Hereinafter, each configuration of the present invention will be described in detail.

【0018】(パッケージ101)パッケージ101と
は、少なくとも内部に光電素子105を配置し、外部環
境から保護するものである。パッケージ101には、内
部に配置された光電素子105を外部とを電気的に接続
可能な外部電極106が設けられている。したがって、
光電素子105の数や大きさにより種々の形状のものが
挙げられる。具体的には、コの字状のパッケージ101
先端に対向して受光素子と発光素子とをそれぞれセット
に配置させる開口部を有するホトカプラの如きものも挙
げられる。
(Package 101) The package 101 has a photoelectric element 105 disposed at least inside to protect it from an external environment. The package 101 is provided with an external electrode 106 that can electrically connect the photoelectric element 105 disposed inside to the outside. Therefore,
Various shapes are available depending on the number and size of the photoelectric elements 105. Specifically, a U-shaped package 101
Examples include a photocoupler having an opening that opposes the tip and arranges a light receiving element and a light emitting element in a set.

【0019】パッケージ101に要求される特性として
は、(1)外力から内部の光電素子105を保護可能な
ように十分な強度をもつこと、(2)光電素子105と
絶縁性が保たれること、(3)モールド部材103が保
持可能な形状に形成可能であることが挙げられる。この
ようなパッケージ101材料として具体的には、セラミ
ック基板や各種FRP(fiber-reinforced plastics)
などが好適に挙げられる。パッケージ101材料が無機
材料であるセラミックや硝子繊維中に樹脂注入させたも
のなどは、モールド部材に使用される樹脂と比較して熱
膨張係数が小さく強度が強い。
The characteristics required of the package 101 include (1) sufficient strength to protect the internal photoelectric element 105 from external force, and (2) insulation from the photoelectric element 105 is maintained. (3) The mold member 103 can be formed into a shape that can be held. Specific examples of such a package 101 material include a ceramic substrate and various types of FRP (fiber-reinforced plastics).
And the like. A material in which the package 101 is made of an inorganic material, such as ceramic or glass fiber, has a smaller thermal expansion coefficient and higher strength than a resin used for a molding member.

【0020】セラミックを利用したパッケージ101
は、セラミック焼成前の材料としてグリーンシートを多
層に重ね合わせることにより光電素子105を配置させ
る内部空間(パッケージ開口部内)やモールド部材10
3を保持する形状を比較的簡単に形成することができ
る。また、グリーンシート状にW(タングステン)ペー
ストを印刷させておくだけで比較的簡単に外部電極10
6を形成することができる。特に、発熱量の多いLED
やLDなどの発光素子の場合、発光素子自体の昇温によ
り発光輝度や発光波長が変化する場合がある。そのた
め、パッケージ101自体が放熱性がよく発光素子から
の熱を効率よく外部に放出することが望まれる。特に、
小型化、放熱性や強度の点からセラミックがより優れた
材料として好適に挙げられる。
Package 101 Using Ceramic
Is a method in which a green sheet is laminated in multiple layers as a material before ceramic firing, and an inner space (in a package opening) in which the photoelectric element 105 is arranged and a molding member 10 are arranged.
3 can be formed relatively easily. Further, the external electrode 10 can be relatively easily formed only by printing a W (tungsten) paste on a green sheet.
6 can be formed. In particular, LEDs that generate a large amount of heat
In the case of a light emitting device such as a light emitting device or an LD, the light emission luminance and the light emission wavelength may change due to a rise in temperature of the light emitting device itself. Therefore, it is desired that the package 101 itself has good heat dissipation and efficiently discharges heat from the light emitting element to the outside. Especially,
Ceramics are preferably mentioned as a more excellent material in terms of miniaturization, heat dissipation and strength.

【0021】なお、セラミックは多孔性を有するためモ
ールド部材を構成する樹脂が孔から漏れ出す場合がある
ためモールド部材の量を少なくし発光観測面側から見て
窪んだ形状(パッケージの縦断面から見ると凹部形状)
とすることが好ましい。
Since the ceramic has porosity, the resin constituting the mold member may leak out of the hole, so that the amount of the mold member is reduced, and the shape is depressed when viewed from the light emission observation surface side (from the vertical section of the package). Look at the concave shape)
It is preferable that

【0022】(保持手段102、112、122、13
2)保持手段102は、モールド部材103をパッケー
ジ101から離れ難いように保持するものである。した
がって、保持手段は、パッケージ101内部の側壁など
に孔や溝を設けたもの、122パッケージ101開口部
内に突起、内部に鈎がついているもの132などが挙げ
られる。更には、光電素子105が配置された開口部内
部よりも狭いパッケージ表面側の少なくとも一端部10
2を設けるなど種々の形状を採ることができる。保持手
段102は、複数設けることもできるし、所望の形状を
複数組み合わせることもできる。このような保持手段1
02の一例を図3(A)、(B)、(C)に示す。図3
(A)、(B)、(C)は、いずれも光電装置の模式的縦
断面図である。図1及び図2と同じ材料には同じ番号が
付けてある。図3(A)には、パッケージ101表面側
が全て光電素子が配置された開口部内部よりも狭い保持
手段112を示してある。これにより、外部からの損傷
をより少なくしつつ、比較的簡単な構成で保持手段11
2を構成することができる。図3(B)は、パッケージ
開口部の内部側壁に溝122が設けられモールド部材が
溝122内部にまで入り込んでいる。この溝が保持手段
122として働く。これにより、開口面積を大きくしつ
つモールド部材を保持することができる。図3(C)に
は、パッケージ101開口部内の側壁にくさび形の保持
手段132を深さ方向に2段に設けたものを示してあ
る。これにより、より強固にモールド部材103を保持
することができる。
(Holding means 102, 112, 122, 13)
2) The holding means 102 holds the mold member 103 so as to be hard to separate from the package 101. Accordingly, examples of the holding unit include a unit provided with a hole or a groove in a side wall or the like inside the package 101, a unit 122 having a protrusion in an opening of the package 101, and a unit 132 having a hook inside. Furthermore, at least one end 10 on the package surface side narrower than the inside of the opening where the photoelectric element 105 is arranged.
Various shapes, such as providing two, can be adopted. A plurality of holding means 102 can be provided, and a plurality of desired shapes can be combined. Such holding means 1
02 is shown in FIGS. 3A, 3B and 3C. FIG.
(A), (B), (C) are all schematic longitudinal sectional views of the photoelectric device. 1 and 2 have the same reference numerals. FIG. 3A shows the holding means 112 in which the entire surface side of the package 101 is narrower than the inside of the opening where the photoelectric elements are arranged. Accordingly, the holding means 11 can be formed with a relatively simple configuration while reducing external damage.
2 can be configured. In FIG. 3B, a groove 122 is provided on the inner side wall of the package opening, and the mold member enters the inside of the groove 122. This groove functions as the holding means 122. Thereby, it is possible to hold the mold member while increasing the opening area. FIG. 3C shows a case where wedge-shaped holding means 132 are provided in two stages in the depth direction on the side wall inside the opening of the package 101. Thereby, the mold member 103 can be more firmly held.

【0023】特に、パッケージ101表面の一部を光電
素子105が配置された内部よりも狭くすることにより
モールド部材103のはい上がりを防止することができ
る。そのため、モールド部材103を構成するシリコー
ン樹脂にゴミが付着することが少なくすることができ
る。また、外部に引っかかることを防止することもでき
る。
In particular, by making a part of the surface of the package 101 narrower than the inside where the photoelectric element 105 is arranged, it is possible to prevent the mold member 103 from rising. Therefore, dust can be reduced from adhering to the silicone resin constituting the mold member 103. In addition, it can be prevented from being caught outside.

【0024】(モールド部材103)モールド部材10
3は、パッケージ101内部に設けられた光電素子10
5や導電性ワイヤー107などを塵芥、水分や外力など
から保護するものである。本発明においては、モールド
部材103としてシリコーン樹脂を選択している。シリ
コーン樹脂は、エポキシ樹脂などと比べて物理的強度が
弱いと共に、接着性が弱い。また、熱膨張率が高い。し
かし耐熱性に優れると共に撥水性がある。また、ある程
度の強度と共に透光性を持たせることができる。さら
に、弾性率が高く、内部に水分をため込まないと考えら
れるなど優れた特性を有する。
(Mold member 103) Mold member 10
3 is a photoelectric device 10 provided inside the package 101.
5 and the conductive wire 107 are protected from dust, moisture, external force, and the like. In the present invention, a silicone resin is selected as the mold member 103. Silicone resin has lower physical strength and lower adhesiveness than epoxy resin and the like. Also, the coefficient of thermal expansion is high. However, it has excellent heat resistance and water repellency. In addition, it can have a certain degree of strength and a light-transmitting property. Furthermore, it has excellent characteristics such as high elastic modulus and is considered not to accumulate moisture inside.

【0025】そのため半田付けなどモールド部材101
の熱膨張や熱収縮の繰り返しが行われたとしても、光電
素子105と外部電極106との電気的接続部材である
導電性ペーストやダイボンド樹脂108などを損傷する
ことがない。
For this reason, the molding member 101 such as soldering
Even if thermal expansion and thermal contraction are repeated, the conductive paste and the die bond resin 108 which are the electrical connection members between the photoelectric element 105 and the external electrodes 106 are not damaged.

【0026】一方、シリコーン樹脂は、粘着性を持つた
めゴミなどの付着を生じるが、パッケージ101との接
着性が十分でない。また、モールド部材103が表面張
力によりパッケージ101側壁を這い上がる傾向にあ
る。パッケージ101開口部外にもモールド部材103
が這い上がるとモールド部材103に外力がかかりやす
くなる。はみ出たモールド部材103は、ゴミの付着が
生じると共に外部のものに引っかかりやすく、外力によ
って比較的容易に剥がれる。
On the other hand, the silicone resin has an adhesive property and causes adhesion of dust and the like, but the adhesive property with the package 101 is not sufficient. Also, the mold member 103 tends to crawl on the side wall of the package 101 due to surface tension. The mold member 103 is also provided outside the opening of the package 101.
When crawling up, an external force is likely to be applied to the mold member 103. The protruding mold member 103 is liable to be stuck to an external object while dust adheres thereto, and is relatively easily peeled off by an external force.

【0027】したがって、パッケージ101内に収容さ
れたシリコーン樹脂は、パッケージ101表面よりも内
部に配置されることが好ましい。これにより外部からの
塵芥などの付着を少なくすると共に何らかの突起物でパ
ッケージ101からはみ出たシリコーン樹脂が引っかけ
られることにより剥がれることがより少ない。特に、パ
ッケージ101としてセラミックを用いた場合は、セラ
ミックパッケージ101自体が多孔性を持つている。そ
のためパッケージ101表面に滲み出てきにくいように
モールド部材103の樹脂量を少なくする。結果とし
て、パッケージ101から露出したモールド部材103
が発光観測面側から見て窪んだ形状とすることがより好
ましい。
Therefore, it is preferable that the silicone resin accommodated in the package 101 be disposed inside the surface of the package 101 rather than inside. Accordingly, adhesion of dust and the like from the outside is reduced, and the silicone resin that has protruded from the package 101 by some protrusion is less likely to be peeled off. In particular, when ceramic is used for the package 101, the ceramic package 101 itself has porosity. Therefore, the amount of resin of the mold member 103 is reduced so that the resin does not easily seep out onto the surface of the package 101. As a result, the mold member 103 exposed from the package 101
Is more preferably a concave shape when viewed from the light emission observation surface side.

【0028】モールド部材103は、所望に応じて着色
剤、光安定化剤、蛍光体など種々のものを含有させるこ
ともできる。具体的には、発光素子の発光波長や受光波
長に応じて、不要な波長をカットする目的で顔料や染料
などの着色剤を含有させる。また、発光素子から放出さ
れる光や外部から照射される紫外光を吸収させたり赤外
線を反射させる目的でベンゾトリアゾール系紫外線吸収
剤などや赤外線反射部材として働く酸化チタンなどを挙
げることができる。
The mold member 103 may contain various components such as a colorant, a light stabilizer, and a fluorescent material, if desired. Specifically, a coloring agent such as a pigment or a dye is included for the purpose of cutting unnecessary wavelengths in accordance with the emission wavelength and the reception wavelength of the light emitting element. Further, a benzotriazole-based ultraviolet absorber or the like for absorbing light emitted from the light emitting element or ultraviolet light emitted from the outside or reflecting infrared light, or titanium oxide serving as an infrared reflecting member can be used.

【0029】(蛍光体104)蛍光体104は、発光素
子からの発光波長を受けて他の波長が発光可能なもの
や、外部からの特定波長を受けて受光素子の受光感度に
合わせることができるものである。特に、紫外光から比
較的短波長の可視光が発光可能な窒化物系化合物半導体
発光素子からの発光波長を受けてそれよりも長波長光を
発光可能な蛍光体との組み合わせにより白色系を含め任
意の発光色を得ることができる。具体的には、蛍光体と
して、セリウムで付活されたイットリウム・アルミニウ
ム・ガーネット系蛍光体(具体的には、Y3Al512
Ceであり、YをGd、Laで全部置換させてもよくA
lをInやGaと全部置換させても良い。)やペリレン
系誘導体などと高エネルギー光が発光可能な窒化物系化
合物半導体(InpGaqAl rN、0≦p≦1、0≦q
≦1、0≦r≦1、p+q+r=1)を発光層にもつ半
導体発光素子との組み合わせにより高輝度発光装置とす
ることができる。特に、発光素子からの発光が青色光で
あり、蛍光体からの発光が黄色光であれば混色により白
色系が発光可能な発光装置とすることができる。蛍光体
は、シリコーン樹脂中に混合させパッケージ101開口
部に注入することで蛍光体入りモールド部材103を構
成することができる。
(Phosphor 104) The phosphor 104 is a light emitting element.
Can emit other wavelengths in response to the emission wavelength
And the sensitivity of the light receiving element by receiving a specific wavelength from the outside
It can be combined. In particular, the ratio
Nitride-based compound semiconductor capable of emitting relatively short wavelength visible light
Receives the emission wavelength from the light-emitting element and emits longer wavelength light
Depending on the combination with the phosphor that can emit light,
A desired luminescent color can be obtained. Specifically, the phosphor and
Yttrium aluminum activated by cerium
Mu-garnet phosphor (specifically, YThreeAlFiveO12:
Ce and Y may be completely replaced by Gd and La
l may be completely replaced with In or Ga. ) And perylene
Nitride that can emit high-energy light with system derivatives
Compound semiconductor (InpGaqAl rN, 0 ≦ p ≦ 1, 0 ≦ q
≦ 1, 0 ≦ r ≦ 1, p + q + r = 1) in the light emitting layer
A high-brightness light-emitting device is obtained by combining with a conductor light-emitting element.
Can be In particular, the light emitted from the light emitting element is blue light.
Yes, if the emission from the phosphor is yellow light, white
A light-emitting device capable of emitting light of a color system can be provided. Phosphor
Open the package 101 by mixing it in silicone resin
The molding member 103 containing the phosphor is injected into the
Can be achieved.

【0030】(光電素子105)光電素子105とは、
光を受けて電気抵抗が変化する光センサー、起電力を生
ずる太陽電池、電気を受けて光を発するLEDやLD
(レーザーダイオード)などが挙げられる。このよう
な、光電素子105は、所望に応じて2個以上配置させ
ることができるし、2種類以上配置させることもでき
る。具体的には、光センサーとLEDを組み合わせたフ
ォトカプラーやRGBが発光可能なフルカラー発光ダイ
オードなどが挙げられる。
(Photoelectric element 105)
An optical sensor that changes its electrical resistance in response to light, a solar cell that generates electromotive force, and an LED or LD that receives light to emit light
(Laser diode) and the like. Two or more such photoelectric elements 105 can be arranged as desired, and two or more kinds can be arranged. Specific examples include a photocoupler combining an optical sensor and an LED, and a full-color light emitting diode capable of emitting RGB light.

【0031】受光素子としては、単結晶や非単結晶であ
る多結晶、微結晶、非晶質であるシリコン、ゲルマニウ
ムなどを用いたものが挙げられる。受光素子は、PI
N、PN、INなどの半導体接合を形成していてもよ
く、また半導体接合などを形成していなくとも良い。非
晶質シリコンを受光素子として利用する場合は、硝子基
板上にシリコン薄膜をプラズマCVD法などにより形成
することができる。形成された半導体表面に一対の電極
を蒸着することにより、比較的簡単に光センサーを形成
することができる。
Examples of the light receiving element include those using single crystal or non-single crystal polycrystal, microcrystal, amorphous silicon, germanium, or the like. The light receiving element is PI
A semiconductor junction such as N, PN, or IN may be formed, or a semiconductor junction may not be formed. When amorphous silicon is used as a light receiving element, a silicon thin film can be formed on a glass substrate by a plasma CVD method or the like. By depositing a pair of electrodes on the formed semiconductor surface, an optical sensor can be formed relatively easily.

【0032】他方、発光素子としては、MOCVD法な
どにより基板上に窒化ガリウム、ガリウム燐、ガリウム
砒素燐、ガリウムアルミニウム砒素、ガリウムアルミニ
ウムインジュウム燐、窒化インジュムガリウムや窒化イ
ンジュウムアルミニウムガリウムなどを発光層として形
成させたものが挙げられる。半導体の構造としては、M
IS接合、PIN接合やPN接合を有するホモ構造、ヘ
テロ構造やダブルへテロ構造のものが挙げられる。半導
体層の材料やその混晶度により発光波長を種々選択する
ことができる。また、半導体活性層を量子効果が生ずる
薄膜に形成させた単一量子井戸構造や多重量子井戸構造
とすることもできる。
On the other hand, as a light emitting element, gallium nitride, gallium phosphide, gallium arsenide phosphide, gallium aluminum arsenide, gallium aluminum indium phosphide, indium gallium nitride, indium aluminum gallium nitride, or the like is emitted on a substrate by MOCVD or the like. One formed as a layer is exemplified. The structure of the semiconductor is M
Examples include a homostructure having an IS junction, a PIN junction, and a PN junction, a heterostructure, and a double heterostructure. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal thereof. Also, a single quantum well structure or a multiple quantum well structure in which the semiconductor active layer is formed as a thin film in which a quantum effect occurs can be used.

【0033】(外部電極106)外部電極106は、パ
ッケージ101外部と内部に配置された光電素子105
とを電気的に接続させるためのものである。そのためパ
ッケージ106上に設けられた導電性を有するパターン
やパッケージ101中に埋め込まれたリードフレームを
利用したものなど種々のものが挙げられる。また、外部
電極106は放熱性、電気伝導性、光電素子の特性など
を考慮して種々の大きさに形成させることができる。外
部電極106は、各光電素子105を配置すると共に光
電素子105から放出された熱を外部に放熱させるため
熱伝導性がよいことが好ましい。外部電極106の具体
的な電気抵抗としては300μΩ・cm以下が好まし
く、より好ましくは、3μΩ・cm以下である。また、
具体的な熱伝導度は、0.01cal/(S)(cm2
(℃/cm)以上が好ましく、より好ましくは 0.5
cal/(S)(cm2)(℃/cm)以上である。
(External Electrode 106) The external electrode 106 is a photoelectric element 105 disposed outside and inside the package 101.
Is to be electrically connected to. Therefore, there are various types such as a conductive pattern provided on the package 106 and a type utilizing a lead frame embedded in the package 101. Further, the external electrode 106 can be formed in various sizes in consideration of heat dissipation, electric conductivity, characteristics of the photoelectric element, and the like. It is preferable that the external electrode 106 has good thermal conductivity for disposing the photoelectric elements 105 and radiating the heat emitted from the photoelectric elements 105 to the outside. The specific electric resistance of the external electrode 106 is preferably 300 μΩ · cm or less, more preferably 3 μΩ · cm or less. Also,
The specific thermal conductivity is 0.01 cal / (S) (cm 2 )
(° C./cm) or more, more preferably 0.5
cal / (S) (cm 2 ) (° C./cm) or more.

【0034】外部電極106の具体的材料としては、銅
やりん青銅板表面に銀、パラジウム或いは金などの金属
メッキや半田メッキなどを施したものが好適に用いられ
る。ガラスエポキシ樹脂やセラミックなどの基板上など
に設けられた外部電極106としては、銅箔やタングス
テン層の上に貴金属メッキさせたものが好適に挙げられ
る。セラミックに外部電極を形成させる場合は、タング
ステンが含有された樹脂ペーストをグリーンシート上に
スクリーン印刷すると共に焼成することにより比較的簡
単に形成することができる。なお、グリーンシート表面
にタングステンの導体ペーストを部分的に付着させ外部
電極形成と同時に正極及び負極がわかるマーキング10
9を形成させることもできる。
As a specific material of the external electrode 106, a material obtained by plating a copper or phosphor bronze plate surface with a metal plating such as silver, palladium or gold, or a solder plating is preferably used. As the external electrode 106 provided on a substrate such as glass epoxy resin or ceramic, a material obtained by plating a copper foil or a tungsten layer with a noble metal is preferably used. When an external electrode is formed on a ceramic, it can be formed relatively easily by screen-printing and firing a resin paste containing tungsten on a green sheet. In addition, a conductive paste of tungsten was partially adhered to the surface of the green sheet to form a positive electrode and a negative electrode simultaneously with the formation of the external electrode.
9 can also be formed.

【0035】(導電性ワイヤー107)導電性ワイヤー
107としては、光電素子105の電極とのオーミック
性、機械的接続性、電気伝導性及び熱伝導性がよいもの
が求められる。熱伝導度としては0.01cal/(s)
(cm2)(℃/cm)以上が好ましく、より好ましくは
0.5cal/(s)(cm2)(℃/cm)以上である。
また、作業性などを考慮して導電性ワイヤーの直径は、
好ましくは、Φ10μm以上、Φ45μm以下である。
このような導電性ワイヤー107として具体的には、
金、銅、白金、アルミニウム等の金属及びそれらの合金
を用いたものが好適に挙げられる。導電性ワイヤー10
7は、各光電素子105の電極と、外部電極106をワ
イヤーボンディング機器によって容易に接続させること
ができる。
(Conductive Wire 107) The conductive wire 107 is required to have good ohmic properties, mechanical connectivity, electrical conductivity and thermal conductivity with the electrodes of the photoelectric element 105. 0.01 cal / (s) as thermal conductivity
(cm 2 ) (° C./cm) or more, more preferably 0.5 cal / (s) (cm 2 ) (° C./cm) or more.
Also, considering the workability, etc., the diameter of the conductive wire is
Preferably, it is Φ10 μm or more and Φ45 μm or less.
Specifically, as such a conductive wire 107,
Suitable materials include metals such as gold, copper, platinum, and aluminum and alloys thereof. Conductive wire 10
7 can easily connect the electrode of each photoelectric element 105 and the external electrode 106 by a wire bonding device.

【0036】(ダイボンド樹脂108)光電素子105
とパッケージ101との接着は、熱硬化性樹脂などのダ
イボンド樹脂108によって行うことができる。具体的
には、エポキシ樹脂、アクリル樹脂やイミド樹脂などが
挙げられる。光電素子105をダイボンドさせると共に
パッケージ101の外部電極と電気的に接続させるため
にはAgペースト、カーボンペースト、ITOペース
ト、金属バンプ等を用いることもできる。以下、本発明
の具体的実施例について詳述するがこれのみに限られる
ものでないことはいうまでもない。
(Die bond resin 108) Photoelectric element 105
The package 101 can be bonded to the package 101 by a die bond resin 108 such as a thermosetting resin. Specifically, an epoxy resin, an acrylic resin, an imide resin, and the like can be given. An Ag paste, a carbon paste, an ITO paste, a metal bump, or the like can be used for die-bonding the photoelectric element 105 and electrically connecting the photoelectric element 105 to an external electrode of the package 101. Hereinafter, specific examples of the present invention will be described in detail, but needless to say, the present invention is not limited thereto.

【0037】[0037]

【実施例】【Example】

(実施例1)パッケージは、セラミックによって形成さ
せた。セラミック材料として、アルミナを主成分とする
グリーンシートを所定の形状にカットさせた。カットさ
せたグリーンシートはLEDチップを配置させるキャビ
ティーとなる開口部を構成させるために長径約2.5m
m、短径約1.5mmのトラック状スルーホールを形成
させた。同様にキャビティー内部を構成させる一片が約
2.5mm、約1.5mmの長方形のスルーホールを形
成させた。また、外部電極の一部が形成できるよう発光
素子が配置されるパッケージ底面となるグリーンシート
にもスルーホールを形成させた。
(Example 1) The package was formed of ceramic. As a ceramic material, a green sheet mainly composed of alumina was cut into a predetermined shape. The cut green sheet has a major diameter of about 2.5 m to form an opening that serves as a cavity for placing the LED chip.
m, a track-shaped through hole having a short diameter of about 1.5 mm was formed. Similarly, a piece constituting the inside of the cavity formed a rectangular through hole of about 2.5 mm and about 1.5 mm. Further, through holes were also formed in a green sheet serving as a bottom surface of the package on which the light emitting elements were arranged so that a part of the external electrode could be formed.

【0038】次に、発光素子としてLEDチップを搭載
しない側からスクリーン印刷法によりタングステンの導
体ペーストでスルーホールの穴埋め、及び配線部分の印
刷を行った。
Next, from the side where no LED chip was mounted as a light emitting element, through holes were filled with a conductive paste of tungsten by screen printing and the wiring portion was printed.

【0039】同様に、グリーンシートのLEDチップを
搭載する側にタングステンの導体ペーストをスクリーン
印刷法により導電体層を印刷する。導体印刷が形成され
たグリーンシートとモールド部材が配置されるキャビテ
ィーを構成するグリーンシートとを積層加圧させること
により成形体を得る。(なお、パッケージ表面となるグ
リーンシート上にタングステンの導体ペーストを部分的
に付着させて正極及び負極がわかるようにマーキングさ
せてある。)グリーンシートを焼成後、タングステン層
の上にAg層を電気メッキさせ外部電極を有し、開口部
の深さが約0.7mmであるパッケージを形成させた。
Similarly, a conductor layer of tungsten is printed on the green sheet on the side on which the LED chips are mounted by a screen printing method. A green body on which conductor printing is formed and a green sheet constituting a cavity in which a mold member is arranged are laminated and pressed to obtain a molded body. (Note that the conductor paste of tungsten is partially adhered on the green sheet serving as the package surface so that the positive electrode and the negative electrode are marked so that the positive electrode and the negative electrode can be identified.) Plating was performed to form a package having external electrodes and an opening having a depth of about 0.7 mm.

【0040】一方、LEDチップとして主発光波長が4
60nmのIn0.2Ga0.8N半導体を用いた。LEDチ
ップは、洗浄されたサファイヤ基板上にTMG(トリメ
チルガリウム)ガス、TMI(トリメチルインジュウ
ム)ガス、窒素ガス及びドーパントガスをキャリアガス
と共に流し、MOCVD法で窒化ガリウム系化合物半導
体を成膜させることにより形成させた。ドーパントガス
としてSiH4とCp2Mgと、を切り替えることによっ
てN型導電性を有する窒化ガリウム系半導体とP型導電
性を有する窒化ガリウム系半導体を形成しPN接合を形
成させる。
On the other hand, the main emission wavelength of the LED chip is 4
A 60 nm In 0.2 Ga 0.8 N semiconductor was used. The LED chip is formed by flowing a TMG (trimethyl gallium) gas, a TMI (trimethyl indium) gas, a nitrogen gas and a dopant gas together with a carrier gas on a cleaned sapphire substrate, and forming a gallium nitride-based compound semiconductor by MOCVD. Formed. By switching between SiH 4 and Cp 2 Mg as the dopant gas, a gallium nitride-based semiconductor having N-type conductivity and a gallium nitride-based semiconductor having P-type conductivity are formed to form a PN junction.

【0041】半導体発光素子としては、N型導電性を有
する窒化ガリウム半導体であるコンタクト層と、P型導
電性を有する窒化ガリウムアルミニウム半導体であるク
ラッド層、P型導電性を有する窒化ガリウム半導体であ
るコンタクト層を形成させた。N型導電性を有するコン
タクト層とP型導電性を有するクラッド層との間に厚さ
約3nmであり、単一量子井戸構造とされるノンドープ
InGaNの活性層を形成させた。(なお、サファイア
基板上には低温で窒化ガリウム半導体を形成させバッフ
ァ層とさせてある。また、P型導電性を有する半導体
は、成膜後400℃以上でアニールさせてある。) エッチングによりサファイア基板上のPN各コンタクト
層表面を露出させた後、スパッタリングにより各電極を
それぞれ形成させた。こうして出来上がった半導体ウエ
ハーをスクライブラインを引いた後、外力により分割さ
せ350μm角のLEDチップを形成させた。
The semiconductor light emitting device includes a contact layer made of a gallium nitride semiconductor having N-type conductivity, a clad layer made of a gallium aluminum nitride semiconductor having P-type conductivity, and a gallium nitride semiconductor having P-type conductivity. A contact layer was formed. An active layer of non-doped InGaN having a thickness of about 3 nm and a single quantum well structure was formed between a contact layer having N-type conductivity and a cladding layer having P-type conductivity. (Note that a gallium nitride semiconductor is formed at a low temperature on a sapphire substrate to serve as a buffer layer. A semiconductor having P-type conductivity is annealed at 400 ° C. or more after film formation.) Sapphire by etching After exposing the surface of each PN contact layer on the substrate, each electrode was formed by sputtering. After the scribe line was drawn on the semiconductor wafer thus completed, it was divided by external force to form LED chips of 350 μm square.

【0042】パッケージ開口部の中央にLEDチップを
エポキシ樹脂によりダイボンディングさせる。ダイボン
ド樹脂を140度2時間で硬化後、LEDチップの電極
とパッケージの外部電極とを直径30μの金線でそれぞ
れワイヤーボンディングさせた。
An LED chip is die-bonded to the center of the package opening with epoxy resin. After the die bond resin was cured at 140 ° C. for 2 hours, the electrode of the LED chip and the external electrode of the package were wire-bonded with a gold wire having a diameter of 30 μm.

【0043】他方、蛍光体は、Y、Gd、Ceの希土類
元素を化学量論比で酸に溶解した溶解液を蓚酸で共沈さ
せた。これを焼成して得られる共沈酸化物と、酸化アル
ミニウムと混合して混合原料を得る。これにフラックス
としてフッ化アンモニウムを混合して坩堝に詰め、空気
中1400°Cの温度で3時間焼成して焼成品を得た。
焼成品を水中でボールミルして、洗浄、分離、乾燥、最
後に篩を通して形成させた。形成された(Y0.8
0.23Al512:Ce0.03蛍光体をエポキシ樹脂中
に含有させた。
On the other hand, as a phosphor, a solution in which rare earth elements of Y, Gd and Ce were dissolved in an acid at a stoichiometric ratio was coprecipitated with oxalic acid. This is mixed with a coprecipitated oxide obtained by calcination and aluminum oxide to obtain a mixed raw material. This was mixed with ammonium fluoride as a flux, packed in a crucible, and fired in air at a temperature of 1400 ° C. for 3 hours to obtain a fired product.
The calcined product was ball milled in water, washed, separated, dried, and finally formed through a sieve. Formed (Y 0.8 G
d 0.2) 3 Al 5 O 12 : a Ce 0.03 phosphor is contained in the epoxy resin.

【0044】シリコーン樹脂中に(Y0.8Gd0.23
512:Ce0.03蛍光体を重量比で10:1に混合撹
拌させたものをLEDチップが配置されたパッケージ開
口部内に充填した。塗布量は、表面が窪んだ凹部形状
(表面から約0.25mmの深さ)としシリコーン樹脂
がパッケージ表面を濡らさないようにした。シリコーン
樹脂を150℃2時間で硬化後蛍光体が含有されたシリ
コーン樹脂は、パッケージの表面側から見てすり鉢状に
形成された。また、セラミック製のパッケージ表面にも
シリコーン樹脂は、しみ出ていなかった。こうして形成
された発光ダイオードを500個形成された。
In the silicone resin, (Y 0.8 Gd 0.2 ) 3 A
l 5 O 12: Ce 0.03 phosphor at a weight ratio of 10: LED chip that is mixed and stirred is filled to the arrangement package opening to 1. The application amount was a concave shape (a depth of about 0.25 mm from the surface) in which the surface was depressed so that the silicone resin did not wet the package surface. After the silicone resin was cured at 150 ° C. for 2 hours, the silicone resin containing the phosphor was formed in a mortar shape when viewed from the surface side of the package. Also, the silicone resin did not exude on the surface of the ceramic package. 500 light emitting diodes thus formed were formed.

【0045】形成された発光ダイオードは、全て発光可
能であり平均光度約2cdであり平均色度点は(x,
y)=(0.310、0.300)であった。250個
の発光ダイオードにつきヒートサイクル試験を行った。
ヒートサイクル試験は、−5℃10分、80℃15分を
1サイクルの条件として3000サイクルさせた。ヒー
トサイクル試験後の発光ダイオードは、全て発光可能で
あり光度も色度点も変化がなかった。
All the formed light emitting diodes can emit light, have an average luminous intensity of about 2 cd, and have an average chromaticity point of (x,
y) = (0.310, 0.300). A heat cycle test was performed on 250 light emitting diodes.
The heat cycle test was performed at -5 ° C for 10 minutes and at 80 ° C for 15 minutes as one cycle, and was subjected to 3000 cycles. All the light-emitting diodes after the heat cycle test were able to emit light, and there was no change in luminous intensity or chromaticity point.

【0046】次に、残りの250個の発光ダイオードに
つき引っ張り試験を行った。引っ張り試験は、フック状
の先端に50gの加重をかけパッケージ表面を開口部を
横断するように20mm/sで走らせた。引っ張り試験
後、残りの全ての発光ダイオードに異常はなく試験前と
同様発光可能であった。なお、この試験の結果は、蛍光
体を含有させない光電装置においても同様の結果が得ら
れる。
Next, a tensile test was performed on the remaining 250 light emitting diodes. In the tensile test, a load of 50 g was applied to the hook-shaped tip, and the package surface was run at 20 mm / s across the opening. After the tensile test, there was no abnormality in all the remaining light emitting diodes, and light emission was possible as before the test. It should be noted that the same result can be obtained in the photoelectric device that does not contain a phosphor.

【0047】(比較例1)モールド部材の材料をエポキ
シ樹脂とした以外は、実施例1と全く同様にした。実施
例1と同様にして発光ダイオードを500個形成させ
た。形成された発光ダイオードは全て発光可能であり、
ほぼ実施例1と同様の発光特性を示した。実施例1と同
様の条件でヒートサイクル試験及び引っ張り試験を行っ
た。ヒートサイクル試験後、発光可能であったものは、
6個しかなくほとんどが発光不能であった。不点灯にな
った発光ダイオードを分解したところ外部電極やLED
チップの電極上に形成されたボンディング部においてワ
イヤーが切断されているものがほとんどであった。引っ
張り試験においては、実施例1と同様発光ダイオードに
異常はなく試験前と同様発光可能であった。なお、ヒー
トサイクル試験の回数を減らしヒートサイクル試験をし
たところ約100サイクルから不点灯になるものがあ
り、1000サイクルでは全て不点灯になった。
Comparative Example 1 The procedure was the same as in Example 1 except that the material of the mold member was epoxy resin. In the same manner as in Example 1, 500 light emitting diodes were formed. All the formed light emitting diodes can emit light,
Light emission characteristics almost similar to those of Example 1 were exhibited. A heat cycle test and a tensile test were performed under the same conditions as in Example 1. After the heat cycle test, those that could emit light were:
There were only six and most of them could not emit light. When the unlit LED is disassembled, an external electrode or LED
In most cases, wires were cut at bonding portions formed on the electrodes of the chip. In the tensile test, there was no abnormality in the light emitting diode as in Example 1, and light emission was possible as before the test. In addition, when the number of heat cycle tests was reduced and the heat cycle test was performed, some of the lamps became unlit from about 100 cycles, and all were unlit at 1000 cycles.

【0048】(比較例2)パッケージ開口部に開口部先
端の少なくとも一部が内端部よりも狭いモールド部材保
持手段がないほかは、実施例1と同様にして発光ダイオ
ードを500個形成させた。形成された発光ダイオード
は全て発光可能であり、ほぼ実施例1と同様の発光特性
を示した。実施例1と同様の条件でヒートサイクル試験
及び引っ張り試験を行った。ヒートサイクル試験後も、
試験前とほぼ同等の発光特性を示した。また、引っ張り
試験では、250個中164個までがシリコーン樹脂が
とれた。その結果、白色発光することができないばかり
でなく不点灯となったものが大部分であった。
(Comparative Example 2) 500 light emitting diodes were formed in the same manner as in Example 1 except that there was no mold member holding means at the package opening where at least a part of the opening tip was narrower than the inner end. . All of the formed light emitting diodes were capable of emitting light, and exhibited light emission characteristics substantially similar to those of Example 1. A heat cycle test and a tensile test were performed under the same conditions as in Example 1. After the heat cycle test,
The light emission characteristics were almost the same as before the test. In the tensile test, up to 164 out of 250 silicone resin were removed. As a result, most of the lamps were not able to emit white light but were not lit.

【0049】[0049]

【発明の効果】本発明の構成とすることにより、加熱、
外力さらには、水分に対して信頼性が高い光電装置を提
供することができる。したがって、車載用など振動、ヒ
ートサイクルや小型化の要望の厳しい環境下においても
使用可能な発光ダイオードなどを構成することができ
る。
According to the constitution of the present invention, heating,
It is possible to provide a photoelectric device having high reliability against external force and moisture. Therefore, it is possible to constitute a light emitting diode or the like that can be used even in an environment where demands for vibration, heat cycle, and miniaturization are severe, such as for a vehicle.

【0050】特に、請求項1記載の構成とすることで、
半田付け時などモールド部材の熱膨張に伴う大きな力が
光電素子などにかからない。そのため、光電素子がパッ
ケージの所望の箇所からずれることがない。また、光電
素子と外部電極とを電気的に接続させる導電性ペースト
のクラックや導電性ワイヤーの断線がない。そのため温
度サイクルに伴っても光電特性の低下や非発光などとな
ることがなくなる。また、シリコーン樹脂は、エポキシ
樹脂などと比較して樹脂内外に水分が比較的自由に出入
りすることができる。そのため、シリコーン樹脂で被覆
された光電素子自体が樹脂内部に含まれた水分により損
傷することが極めて少ない。
In particular, by adopting the structure described in claim 1,
A large force due to thermal expansion of the mold member such as at the time of soldering is not applied to the photoelectric element or the like. Therefore, the photoelectric element does not shift from a desired portion of the package. In addition, there is no crack in the conductive paste or disconnection of the conductive wire for electrically connecting the photoelectric element and the external electrode. Therefore, even if the temperature cycle is performed, the photoelectric characteristics do not deteriorate and no light emission occurs. In addition, moisture can enter and exit the silicone resin relatively freely inside and outside the resin as compared with the epoxy resin and the like. Therefore, the photoelectric element itself coated with the silicone resin is extremely unlikely to be damaged by moisture contained in the resin.

【0051】さらに、パッケージに保持手段を設けるこ
とにより、低接着性を持つシリコーン樹脂がパッケージ
から離れることがない。なお、パッケージ開口部表面よ
り低く配置されたモールド部材とすることにより、低粘
着性を持つシリコーン樹脂であっても外部のゴミなどが
付着しにくい。そればかりでなく外部のものにモールド
部材が付着してパッケージからモールド部材が剥がれ難
くなる。
Further, by providing the package with the holding means, the silicone resin having low adhesiveness does not separate from the package. By using a mold member that is disposed lower than the surface of the package opening, external dust and the like hardly adhere to the silicone resin having low adhesiveness. In addition, the mold member adheres to an external object, making it difficult for the mold member to peel off from the package.

【0052】請求項2記載の構成とすることで、モール
ド樹脂のはい上がりを抑制すると共に機械的に保持され
ることとなる。そのため、所望の光学特性を維持しつ
つ、熱衝撃などに強い光電装置とすることができる。ま
た、シリコーン樹脂の低接着性という弱点をカバーしつ
つ信頼性の高い光電装置を比較的簡単に形成することが
できる。
According to the structure of the second aspect, the mold resin is prevented from rising and is mechanically held. Therefore, a photoelectric device which is resistant to thermal shock and the like while maintaining desired optical characteristics can be provided. Further, a highly reliable photoelectric device can be formed relatively easily while covering the weak point of the low adhesiveness of the silicone resin.

【0053】請求項3記載の構成とすることにより、放
熱性よく強固な光電装置とすることができる。モールド
部材を凹状とすることにより、多孔性を有するセラミッ
クパッケージであってもセラミックパッケージ表面にモ
ールド樹脂が滲み出ることがなく塵芥の付着を少なくす
ることができる。
According to the third aspect of the present invention, a strong photoelectric device having good heat dissipation can be obtained. By making the mold member concave, even if it is a porous ceramic package, the mold resin does not exude on the surface of the ceramic package, and the adhesion of dust can be reduced.

【0054】請求項4記載の構成とすることにより、発
光素子からの発光波長を受けて異なる発光波長が発光可
能な発光装置や外部からの特定波長を受けて異なる波長
を受光可能な受光装置とすることができる。特に、本発
明は、熱特性に強く且つモールド部材を保持することが
できるため、蛍光体を含有させたモールド部材が剥がれ
ることで所望の光電特性を持つ光電装置として機能しな
くなることもない。
According to the fourth aspect of the present invention, there is provided a light emitting device capable of receiving a light emitting wavelength from a light emitting element to emit a different light emitting wavelength or a light receiving device capable of receiving a specific wavelength from the outside and receiving different wavelengths. can do. In particular, since the present invention is strong in thermal characteristics and can hold the mold member, it does not function as a photoelectric device having desired photoelectric characteristics due to peeling of the mold member containing the phosphor.

【0055】請求項5記載の方法により、量産性よく信
頼性の高い光電装置を比較的簡単に形成することができ
る。
According to the method described in claim 5, it is possible to relatively easily form a photoelectric device with high productivity and high reliability.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は、本発明の光電装置であるチップタイプ
LEDの模式的平面図である。
FIG. 1 is a schematic plan view of a chip type LED which is the photoelectric device of the present invention.

【図2】図2は、図1のA−Aにおける模式的断面図で
ある。
FIG. 2 is a schematic sectional view taken along line AA of FIG. 1;

【図3】図3は、本発明に用いられる保持手段例を示し
た光電装置の模式的断面図であり、図3(A)は、パッ
ケージ表面の開口部全面が内部より狭く、図3(B)
は、パッケージ開口部内部の側壁に溝が設けられ、図3
(C)は、パッケージ開口部内の側壁にくさび形の突起
を形成させたものである。
FIG. 3 is a schematic cross-sectional view of a photoelectric device showing an example of a holding unit used in the present invention. FIG. 3 (A) shows that the entire opening of the package surface is narrower than the inside, and FIG. B)
In FIG. 3, a groove is provided in a side wall inside the package opening, and FIG.
(C) shows a wedge-shaped projection formed on a side wall in the package opening.

【図4】図4は、本発明と比較のために示したチップタ
イプLEDの模式的平面図である。
FIG. 4 is a schematic plan view of a chip type LED shown for comparison with the present invention.

【図5】図5は、図4のB−Bにおける模式的断面図で
ある。
FIG. 5 is a schematic sectional view taken along line BB of FIG. 4;

【符号の説明】[Explanation of symbols]

101・・・パッケージ 102、112、122、132・・・保持手段 103・・・モールド部材 104・・・蛍光体 105・・・光電素子 106・・・外部電極 107・・・導電性ワイヤー 108・・・ダイボンド樹脂 109・・・マーキング 201・・・パッケージ 203・・・モールド部材 205・・・光電素子 206・・・外部電極 207・・・導電性ワイヤー 208・・・ダイボンド樹脂 101: Package 102, 112, 122, 132: Holding means 103: Mold member 104: Phosphor 105: Photoelectric element 106: External electrode 107: Conductive wire 108:・ ・ Die bond resin 109 ・ ・ ・ Marking 201 ・ ・ ・ Package 203 ・ ・ ・ Mold member 205 ・ ・ ・ Photoelectric element 206 ・ ・ ・ External electrode 207 ・ ・ ・ Conductive wire 208 ・ ・ ・ Die bond resin

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】開口部を有するパッケージ(101)と、該パ
ッケージ(101)の開口部内と外部とを導通可能な第1及
び第2の外部電極(106)と、前記パッケージ(101)開口
部内に配置されると共にパッケージ内の第1及び第2の
外部電極(106)とそれぞれ電気的に接続された光電素子
(105)と、前記パッケージ(101)の開口部内で前記光電素
子(105)を被覆すると共に前記パッケージ(101)表面より
低く配置されたモールド部材(103)と、を有する光電装
置であって、 前記モールド部材(103)がシリコーン樹脂であると共
に、前記パッケージ(101)がモールド部材(103)を保持す
る保持手段(102)を有することを特徴とする光電装置。
1. A package having an opening, first and second external electrodes capable of conducting between the inside of the opening of the package and the outside, and the inside of the opening of the package. And a photoelectric element electrically connected to the first and second external electrodes (106) in the package, respectively.
(105) and a mold member (103) that covers the photoelectric element (105) in the opening of the package (101) and is disposed lower than the surface of the package (101), The photoelectric device, wherein the mold member (103) is a silicone resin, and the package (101) has a holding means (102) for holding the mold member (103).
【請求項2】前記保持手段(102)は、光電素子(105)が配
置された開口部内部よりも狭いパッケージ(101)表面側
の少なくとも一端部である請求項1記載の光電装置。
2. The photoelectric device according to claim 1, wherein the holding means is at least one end on the surface side of the package, which is narrower than the inside of the opening in which the photoelectric element is arranged.
【請求項3】前記パッケージ(101)がセラミックである
と共にパッケージ(101)から露出したモールド部材(103)
が発光観測面側から見て窪んでいる請求項1記載の光電
装置。
3. A mold member (103) wherein said package (101) is ceramic and is exposed from said package (101).
The photoelectric device according to claim 1, wherein the light-emitting device is recessed when viewed from a light emission observation surface side.
【請求項4】前記光電素子(105)が発光素子であると共
に前記モールド部材(103)中に蛍光体を含む請求項1記
載の光電装置。
4. An optoelectronic device according to claim 1, wherein said optoelectronic device is a light emitting device and said mold member includes a phosphor.
【請求項5】開口部を有し内部に少なくとも第1及び第
2の外部電極(106)が配置されたパッケージ(101)と、
前記第1及び第2の外部電極(106)とそれぞれ電気的に
接続されると共に前記パッケージ(101)開口部内に設け
られた光電素子(105)と、前記パッケージ(101)開口部内
に前記光電素子(105)を被覆するモールド部材(103)と、
を有する光電装置の形成方法において、 前記パッケージ(101)表面側の少なくとも一端部が光電
素子(105)が配置された開口部内部よりも狭い開口部内
にシリコーン樹脂を流し込みむ工程と、前記シリコーン
樹脂を加熱硬化させモールド部材(103)を形成させる工
程と、有することを特徴とする光電装置の形成方法。
5. A package (101) having an opening and having at least first and second external electrodes (106) disposed therein,
A photoelectric element (105) electrically connected to the first and second external electrodes (106) and provided in the opening of the package (101); and the photoelectric element in the opening of the package (101). A mold member (103) covering the (105),
A step of pouring a silicone resin into an opening having at least one end on the surface side of the package (101) narrower than the inside of the opening in which the photoelectric element (105) is arranged; and And a step of forming a mold member (103) by heat-curing the resin to form a mold member (103).
JP23472897A 1997-08-29 1997-08-29 Chip type LED Expired - Lifetime JP3228321B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23472897A JP3228321B2 (en) 1997-08-29 1997-08-29 Chip type LED

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23472897A JP3228321B2 (en) 1997-08-29 1997-08-29 Chip type LED

Publications (2)

Publication Number Publication Date
JPH1174561A true JPH1174561A (en) 1999-03-16
JP3228321B2 JP3228321B2 (en) 2001-11-12

Family

ID=16975444

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3228321B2 (en)

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