JPH1174526A5 - - Google Patents
Info
- Publication number
- JPH1174526A5 JPH1174526A5 JP1998185300A JP18530098A JPH1174526A5 JP H1174526 A5 JPH1174526 A5 JP H1174526A5 JP 1998185300 A JP1998185300 A JP 1998185300A JP 18530098 A JP18530098 A JP 18530098A JP H1174526 A5 JPH1174526 A5 JP H1174526A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- gate electrode
- trench
- insulating film
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18530098A JP4112690B2 (ja) | 1997-06-30 | 1998-06-30 | 半導体装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9-174195 | 1997-06-30 | ||
| JP17419597 | 1997-06-30 | ||
| JP18530098A JP4112690B2 (ja) | 1997-06-30 | 1998-06-30 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH1174526A JPH1174526A (ja) | 1999-03-16 |
| JPH1174526A5 true JPH1174526A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2005-04-07 |
| JP4112690B2 JP4112690B2 (ja) | 2008-07-02 |
Family
ID=26495893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18530098A Expired - Fee Related JP4112690B2 (ja) | 1997-06-30 | 1998-06-30 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4112690B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19933418B4 (de) * | 1999-07-16 | 2005-09-29 | Robert Bosch Gmbh | Verfahren zur Herstellung von mikromechanischen Bauelementen |
| KR100467020B1 (ko) * | 2002-07-26 | 2005-01-24 | 삼성전자주식회사 | 자기 정렬된 접합영역 콘택홀을 갖는 반도체 장치 및 그제조 방법 |
| KR100499159B1 (ko) * | 2003-02-28 | 2005-07-01 | 삼성전자주식회사 | 리세스 채널을 갖는 반도체장치 및 그 제조방법 |
| JP4552603B2 (ja) * | 2004-11-08 | 2010-09-29 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
| JP2007194562A (ja) * | 2006-01-23 | 2007-08-02 | Nec Electronics Corp | 半導体装置及びその製造方法 |
| JP4983101B2 (ja) * | 2006-06-02 | 2012-07-25 | ソニー株式会社 | 半導体装置の製造方法 |
| US9431545B2 (en) | 2011-09-23 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8637864B2 (en) | 2011-10-13 | 2014-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP5912394B2 (ja) | 2011-10-13 | 2016-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6053490B2 (ja) | 2011-12-23 | 2016-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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1998
- 1998-06-30 JP JP18530098A patent/JP4112690B2/ja not_active Expired - Fee Related