JPH1174334A - Semiconductor aligner - Google Patents
Semiconductor alignerInfo
- Publication number
- JPH1174334A JPH1174334A JP9234634A JP23463497A JPH1174334A JP H1174334 A JPH1174334 A JP H1174334A JP 9234634 A JP9234634 A JP 9234634A JP 23463497 A JP23463497 A JP 23463497A JP H1174334 A JPH1174334 A JP H1174334A
- Authority
- JP
- Japan
- Prior art keywords
- exposure
- thermal expansion
- semiconductor
- young
- modulus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体集積回路
（ＬＳＩ）などを作製する際に、半導体ウエハに露光処
理を施す際に用いられる半導体露光装置、具体的にはサ
セプタ、ステージなどの支持部材の改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor exposure apparatus used for performing exposure processing on a semiconductor wafer when manufacturing a semiconductor integrated circuit (LSI) or the like, and more specifically, a support member such as a susceptor or a stage. Regarding improvement.
【０００２】[0002]
【従来技術】従来より、半導体装置の製造工程におい
て、シリコンウエハーを支持または保持するためのサセ
プタ、静電チャックや絶縁リングとしてあるいは各種治
具等の半導体製造装置用部品として、主にアルミナや窒
化ケイ素が比較的に安価で、化学的にも安定であるため
広く用いられており、例えば、特開昭５３−９６７６２
号にて提案されている。また、露光装置においてもアル
ミナと窒化ケイ素が主として用いられている。2. Description of the Related Art Conventionally, in a semiconductor device manufacturing process, alumina or nitride is mainly used as a susceptor for supporting or holding a silicon wafer, an electrostatic chuck or an insulating ring, or as a part for a semiconductor manufacturing apparatus such as various jigs. Silicon is widely used because it is relatively inexpensive and chemically stable.
It is proposed in the issue. In an exposure apparatus, alumina and silicon nitride are mainly used.
【０００３】また、コージェライトを半導体製造装置部
品として応用することが、特開平１−１９１４２２号や
特公平６−９７６７５号にて提案されている。特開平１
−１９１４２２号によれば、Ｘ線マスクにおけるマスク
基板に接着する補強リングとして、ＳｉＯ2 、インバー
などに加え、コージェライトによって形成し、メンブレ
ンの応力を制御することが提案されている。[0003] Application of cordierite as a part for semiconductor manufacturing equipment has been proposed in Japanese Patent Application Laid-Open No. Hei 1-191422 and Japanese Patent Publication No. 6-97675. JP 1
According to 191422, it is proposed that a reinforcing ring to be bonded to a mask substrate in an X-ray mask is formed by cordierite in addition to SiO 2 , invar and the like to control the stress of the membrane.
【０００４】また、特公平６−９７６７５号では、静電
チャック用基盤としてアルミナやコージェライト系焼結
体を使用することが提案されている。Japanese Patent Publication No. Hei 6-97675 proposes using an alumina or cordierite-based sintered body as a base for an electrostatic chuck.
【０００５】[0005]
【発明が解決しようとする課題】ＬＳＩなどにおける高
集積化に伴い、回路の微細化が進められ、その線幅はサ
ブミクロンオーダーのレベルまで高精密化しつつある。
そしてこのような回路を形成するための露光装置に対す
る精度も年々高くなり、たとえば露光装置のステージ用
部材においては１００ｎｍ（０．１μｍ）以下の位置決
め精度が要求され、露光の位置合わせ誤差が製品の品質
向上や歩留まり向上に大きな影響を及ぼしているのが現
状である。With the increase in integration of LSIs and the like, circuit miniaturization has been promoted, and the line width has been increasing to a submicron order.
The accuracy of an exposure apparatus for forming such a circuit is becoming higher year by year. For example, a stage member of the exposure apparatus is required to have a positioning accuracy of 100 nm (0.1 μm) or less, and an exposure alignment error is reduced. At present, it greatly affects quality improvement and yield improvement.
【０００６】一般に、セラミックスは金属に比べて熱膨
張率が小さい。しかし、アルミナや窒化ケイ素は熱膨張
率は小さいものの１０〜４０℃の熱膨張率はそれぞれ
５．２×１０-6／℃、１．５×１０-6／℃であり雰囲気
温度が０．１℃変化すると数１００ｎｍ（０．１μｍ）
の変形が発生することになり、露光等の精密な工程では
この変化が大きな問題となり、生産性の低下をもたらし
ている。Generally, ceramics have a smaller coefficient of thermal expansion than metals. However, alumina and although the silicon nitride is thermal expansion coefficient is small 10 to 40 ° C. Thermal expansion coefficient of are each 5.2 × 10 -6 /℃,1.5×10 -6 / ℃ ambient temperature 0.1 Several 100nm (0.1μm)
Is generated, and this change becomes a serious problem in a precise process such as exposure, resulting in a decrease in productivity.
【０００７】このような問題に対して、コージェライト
焼結体は、熱膨張率が１×１０-6／℃程度と、アルミナ
や窒化ケイ素に比較して熱膨張率が低く、上記のような
露光精度に対する問題はある程度解決される。To cope with such a problem, the cordierite sintered body has a coefficient of thermal expansion of about 1 × 10 −6 / ° C., which is lower than that of alumina or silicon nitride. The problem of exposure accuracy is solved to some extent.
【０００８】しかしながら、露光装置の中でも、Ｓｉな
どの半導体ウエハおよび静電チャックを支持するステー
ジのように、被露光部材を載置した支持部材が露光処理
を施す位置まで高速移動を伴うような場合には、移動後
の支持部材自体が所定位置に停止後も振動しており、そ
のために、露光処理を施した時に振動による露光のずれ
が生じ、露光精度を低下させるという問題があった。こ
の問題は、回路の線幅が細くなるほど精度が低下するこ
とから、半導体素子の超精密化に対しては致命的な問題
となっていた。However, even in an exposure apparatus, such as a stage supporting a semiconductor wafer such as Si and an electrostatic chuck, a supporting member on which a member to be exposed is moved at a high speed to a position where exposure processing is performed. According to the method described above, the supporting member itself after the movement vibrates even after stopping at a predetermined position, which causes a shift in exposure due to the vibration when performing the exposure processing, thereby lowering the exposure accuracy. This problem has been fatal to ultra-precise semiconductor devices, since the accuracy decreases as the line width of the circuit decreases.
【０００９】従って、本発明は、それ自体低熱膨張を有
するとともに、高速移動した場合においても振動しにく
く、被露光部材を搭載し高速駆動される支持部材を具備
する半導体露光装置を提供することを目的とするもので
ある。Accordingly, the present invention is to provide a semiconductor exposure apparatus which has a low thermal expansion itself, does not easily vibrate even when moved at a high speed, and has a supporting member mounted with a member to be exposed and driven at a high speed. It is the purpose.
【００１０】[0010]
【課題を解決するための手段】本発明者等は、上記課題
に対して露光装置、特に移動−停止−露光処理を伴うよ
うな支持部材に適したセラミックスについて検討を重ね
た結果、露光精度を高める上で１０〜４０℃における熱
膨張率が１×１０-6／℃以下であることに加え、ヤング
率が１３０ＧＰａ以上のセラミックスを用いることによ
って移動後の支持部材の振動を抑制できる結果、露光時
の振動を解消して露光精度を向上できることを見出し、
発明に至った。The inventors of the present invention have studied the exposure apparatus, particularly, ceramics suitable for a supporting member having a moving-stopping-exposure process with respect to the above-mentioned problems. In order to increase the thermal expansion coefficient at 10 to 40 ° C., the ceramics having a Young's modulus of 130 GPa or more in addition to the thermal expansion coefficient of 1 × 10 −6 / ° C. or less can suppress the vibration of the supporting member after the movement. We found that exposure vibration could be improved by eliminating vibrations at the time,
Invented the invention.
【００１１】即ち、本発明の半導体露光装置は、支持部
材上に載置された半導体ウエハに対して微細パターンを
形成するための露光処理を施こす露光装置において、前
記支持部材が、１０〜４０℃における熱膨張率が１×１
０-6／℃以下であり、ヤング率が１３０ＧＰａ以上のセ
ラミックスからなることを特徴とするものであり、特
に、前記セラミックスが、Ｙまたは希土類元素を酸化物
換算で３〜１５重量％の割合で含有することを特徴とす
るものである。That is, according to the semiconductor exposure apparatus of the present invention, an exposure apparatus for performing an exposure process for forming a fine pattern on a semiconductor wafer mounted on a support member is provided. The coefficient of thermal expansion at 1 ℃ is 1 × 1
0 -6 / ° C. or less and a ceramic having a Young's modulus of 130 GPa or more. In particular, the ceramics may contain Y or a rare earth element in an amount of 3 to 15% by weight in terms of oxide. It is characterized by containing.
【００１２】[0012]
【発明の実施の形態】本発明の半導体露光装置は、例え
ば図１の概略配置図に示すように、光源１としてｉ線、
エキシマレーザー、Ｘ線を用い、レンズ２などの光学系
を経て、Ｓｉウエハ３に対して露光処理を施すものであ
る。このＳｉウエハ３は、例えば静電チャック４表面に
載置され、さらに静電チャック４は、ステージ５上に載
置される。そして、このステージ５は、大面積のＳｉウ
エハ表面の複数箇所に露光処理を施すべく、Ｘステー
ジ、Ｘ−Ｙステージ等の駆動系により露光位置まで高速
移動して露光処理が施される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor exposure apparatus according to the present invention has an i-line as a light source 1 as shown in FIG.
The exposing process is performed on the Si wafer 3 by using an excimer laser and X-rays and passing through an optical system such as a lens 2. The Si wafer 3 is mounted on, for example, the surface of an electrostatic chuck 4, and the electrostatic chuck 4 is further mounted on a stage 5. The stage 5 is moved to an exposure position at a high speed by a drive system such as an X stage or an XY stage so as to perform exposure processing on a plurality of locations on the surface of a large-area Si wafer.
【００１３】本発明の半導体露光装置における半導体ウ
エハを支持する支持部材、特に、上記のような半導体露
光装置における静電チャック４、ステージ５、あるいは
ステージ５を高速移動するための駆動系における各種構
造部品等の支持部材は、まず露光時における雰囲気の温
度に対する変形や歪みが極力小さいことが必要である。
そのために、１０〜４０℃における熱膨張率が１×１０
-6／℃以下、特に０．７×１０-6／℃以下のセラミック
スからなることが重要である。この熱膨張率が１×１０
-6／℃よりも大きいと、雰囲気の温度が１℃変化した場
合においても１００ｎｍ以上の変形が生じる結果、Ｓｉ
ウエハの位置ずれにより高精密な露光処理にずれが生
じ、露光精度を低下させてしまう。なお、熱膨張率の温
度範囲は、室温で露光処理される場合には、２０〜２５
℃の温度範囲で上記の熱膨張率を有すればよい。A support member for supporting a semiconductor wafer in the semiconductor exposure apparatus of the present invention, in particular, the electrostatic chuck 4, the stage 5, or various structures in the drive system for moving the stage 5 at high speed in the semiconductor exposure apparatus as described above. First, it is necessary for the supporting member such as a component to minimize deformation and distortion with respect to the temperature of the atmosphere during exposure.
Therefore, the coefficient of thermal expansion at 10 to 40 ° C. is 1 × 10
-6 / ° C. or less, it is important that especially made of 0.7 × 10 -6 / ℃ following ceramics. This coefficient of thermal expansion is 1 × 10
If the temperature is higher than −6 / ° C., deformation of 100 nm or more occurs even when the temperature of the atmosphere changes by 1 ° C.
Due to the positional deviation of the wafer, a deviation occurs in the high-precision exposure processing, and the exposure accuracy is reduced. The temperature range of the coefficient of thermal expansion is 20 to 25 when the exposure treatment is performed at room temperature.
What is necessary is just to have said coefficient of thermal expansion in the temperature range of ° C.
【００１４】また、本発明によれば、上記の熱膨張率に
加え、上記のセラミックスのヤング率が１３０ＧＰａ以
上であることが重要である。これは、ヤング率１３０Ｇ
Ｐａよりも低いと、Ｓｉウエハを載置して露光位置まで
高速移動し、停止した時、移動に伴う振動が大きく、そ
の結果、露光処理時の露光位置にずれが生じ、露光精度
を低下させてしまうためである。露光精度を考慮すれ
ば、さらにヤング率は高いことが望ましく、かかる観点
から１５０ＧＰａ以上が望ましい。According to the present invention, it is important that the ceramic has a Young's modulus of 130 GPa or more in addition to the above-mentioned coefficient of thermal expansion. This is the Young's modulus 130G
If it is lower than Pa, the Si wafer is mounted and moved at high speed to the exposure position, and when stopped, the vibration accompanying the movement is large. As a result, the exposure position at the time of exposure processing is shifted, and the exposure accuracy is reduced. This is because In consideration of exposure accuracy, it is desirable that the Young's modulus be higher, and from this viewpoint, it is desirable that the Young's modulus be 150 GPa or more.
【００１５】このような低熱膨張性および非振動性は、
静電チャック、ステージ、ステージまわりの駆動系など
の支持部材系のみならず、露光装置における光学系の支
持部材などの構造部品に対しても要求されるものであ
り、これらの露光装置の種々の部品が上記の低熱膨張お
よび高ヤング率を有する材料から構成されることが望ま
しい。Such a low thermal expansion property and non-vibration property are as follows.
It is required not only for supporting members such as an electrostatic chuck, a stage, and a driving system around the stage, but also for structural parts such as a supporting member of an optical system in an exposure apparatus. It is desirable that the component be constructed from a material having the low thermal expansion and high Young's modulus described above.
【００１６】このような低熱膨張、高ヤング率のセラミ
ックスとしては、コージェライト系セラミックスが最も
好適である。コージェライト系セラミックスは、通常、
２ＭｇＯ−２Ａｌ2 Ｏ3 −５ＳｉＯ2 の組成からなるも
のであり、各金属酸化物を所定比率で配合した後、所定
形状に成形後、１３５０〜１４５０℃の酸化性雰囲気中
で焼成することにより作製することができる。As such a ceramic having a low thermal expansion and a high Young's modulus, a cordierite ceramic is most preferred. Cordierite ceramics are usually
Are those having the composition 2MgO-2Al 2 O 3 -5SiO 2 , after blending each metal oxide in predetermined proportions, after molding into a predetermined shape, produced by firing in an oxidizing atmosphere at 1350 to 1450 ° C. can do.
【００１７】しかしながら、このようなコージェライト
は、ヤング率が低く、先の条件を満足し得ないが、コー
ジェライトに対して、Ｙまたは希土類元素のうちの少な
くとも１種を酸化物換算で３〜１５重量％の割合で添加
することにより焼結性を高めることができる結果、セラ
ミックスのヤング率を１３０ＧＰａ以上に高めることが
できる。望ましくは、上記添加物を１０重量％以上の割
合で添加すると、ヤング率を１７０ＧＰａ以上まで高め
ることができる。However, such cordierite has a low Young's modulus and cannot satisfy the above conditions. However, at least one of Y or a rare earth element is not more than 3 to 3 in terms of oxide. The sinterability can be enhanced by adding 15% by weight, so that the Young's modulus of the ceramic can be increased to 130 GPa or more. Desirably, when the additive is added at a ratio of 10% by weight or more, the Young's modulus can be increased to 170 GPa or more.
【００１８】なお、Ｙまたは希土類元素は、酸化物とし
て添加することが望ましい。これによって焼結性を向上
させることができる。希土類元素としては、Ｅｒ、Ｙ
ｂ、Ｓｍ、Ｌｕ、Ｃｅなどが挙げられる。It is desirable that Y or the rare earth element be added as an oxide. Thereby, sinterability can be improved. Er and Y are rare earth elements.
b, Sm, Lu, Ce and the like.
【００１９】なお、このコージェライト系セラミックス
には、上記のＹや希土類元素以外に、焼結性を高めた
り、前記の熱膨張率およびヤング率をさらに改善するた
めにＳｉＣ、Ｓｉ3 Ｎ4 、Ｂ4 Ｃなどの他の添加物を添
加してもよい。In addition, in addition to the above-mentioned Y and rare earth elements, the cordierite-based ceramics include SiC, Si 3 N 4 , and Si 3 N 4 in order to enhance sinterability and further improve the thermal expansion coefficient and Young's modulus. Other additives such as B 4 C may be added.
【００２０】[0020]
【実施例】コージェライト粉末に対して、適宜Ｙおよび
Ｅｒ、Ｙｂ、Ｓｍ、Ｌｕ、Ｃｅの酸化物を表１の比率で
添加し、湿式混合を行った後に乾燥し、バインダーを添
加して造粒した。この粉体を、プレス成形して脱脂後、
大気中１４００℃で１時間焼成してセラミックスを作製
した。また、比較のために、アルミナセラミックス、窒
化ケイ素セラミックスを作製し、またガラス板を準備し
た。EXAMPLES To cordierite powder, oxides of Y, Er, Yb, Sm, Lu, and Ce were appropriately added at the ratios shown in Table 1, and after wet mixing, drying was performed, and a binder was added. Granulated. This powder, after press molding and degreasing,
It was fired at 1400 ° C. for 1 hour in the air to produce a ceramic. For comparison, alumina ceramics and silicon nitride ceramics were prepared, and a glass plate was prepared.
【００２１】これらの各材料について、１０〜４０℃に
おける熱膨張率を測定するとともに、超音波パルス法に
よって室温のヤング率を測定した。また、このセラミッ
クスを用いて、１００ｍｍ角のセラミック板を作製し、
これをＸＹステージ基板として用いてＸ線露光によるマ
ーキング位置の精度を調べた。この際に雰囲気温度は２
５℃±２℃の恒温雰囲気とした。The thermal expansion coefficient of each of these materials at 10 to 40 ° C. was measured, and the Young's modulus at room temperature was measured by an ultrasonic pulse method. Also, a ceramic plate of 100 mm square was prepared using this ceramic,
Using this as an XY stage substrate, the accuracy of the marking position by X-ray exposure was examined. At this time, the ambient temperature is 2
A constant temperature atmosphere of 5 ° C. ± 2 ° C. was set.
【００２２】また、振動特性について、セラミック板の
一端を固定して垂直に立て、その他端に対して、セラミ
ック板の鉛直上方で一端を固定した１００ｇの振り子を
自然落下を利用してセラミック板の他端に横から衝撃を
加えた時の振動の減衰を歪みゲージで測定し、振動が停
止するまでの所要時間を測定した。With respect to the vibration characteristics, the ceramic plate is fixed vertically at one end and is vertically erected. The damping of the vibration when a shock was applied to the other end from the side was measured with a strain gauge, and the time required until the vibration stopped was measured.
【００２３】[0023]
【表１】 [Table 1]
【００２４】表１の結果から明らかなように、１０〜４
０℃における熱膨張率が１×１０-6／℃以下、ヤング率
が１３０ＧＰａ以上の試料のコージェライト系セラミッ
クスは、露光精度が１００ｎｍ以下であるのに対して、
熱膨張率が１×１０-6／℃を越える試料Ｎo.６、９、１
２、１３のコージェライト系セラミックスや、アルミナ
セラミックス、窒化ケイ素セラミックス、ＳｉＯ2 ガラ
スは、露光精度が１００ｎｍを越え、精度の低いもので
あった。As apparent from the results in Table 1, 10 to 4
A cordierite ceramic having a thermal expansion coefficient of 1 × 10 −6 / ° C. or less at 0 ° C. and a Young's modulus of 130 GPa or more has an exposure accuracy of 100 nm or less.
Samples Nos. 6, 9, 1 whose coefficient of thermal expansion exceeds 1 × 10 −6 / ° C.
The exposure accuracy of the cordierite-based ceramics 2, 13, ceramics, silicon nitride ceramics, and SiO 2 glass was less than 100 nm, and the accuracy was low.
【００２５】また、基板の振動の停止時間は、ヤング率
が１３０ＧＰａよりも低いＳｉＯ2ガラスやコージェラ
イトからなる試料Ｎo.１や１７では、振動停止までに２
０秒よりも長い時間を要するのに対して、ヤング率が１
３０ＧＰａ以上と高くなるに従い、振動停止までの時間
が２０秒以下、１５０ＧＰａ以上で１８秒以下に短縮さ
れることがわかる。In the sample Nos. 1 and 17 made of SiO 2 glass or cordierite whose Young's modulus is lower than 130 GPa, the stop time of the vibration
It takes longer than 0 seconds, but the Young's modulus is 1
It can be seen that as the pressure increases to 30 GPa or more, the time to stop the vibration is reduced to 20 seconds or less, and to 150 GPa or more to 18 seconds or less.
【００２６】なお、コージェライト系セラミックスにつ
いては、Ｙまたは希土類元素を３〜１５重量％の割合で
含有せしめることにより、ヤング率を１３０ＧＰａ以
上、セラミックスの１０重量％以上の割合で添加する
と、ヤング率を１７０ＧＰａ以上まで高めることができ
た。For cordierite ceramics, if Y or a rare earth element is contained at a ratio of 3 to 15% by weight, the Young's modulus is 130 GPa or more and the ceramics is added at a ratio of 10% by weight or more. To 170 GPa or more.
【００２７】[0027]
【発明の効果】以上詳述した通り、本発明によれば、半
導体露光装置におけるステージなどの支持部材として、
低熱膨張を有し且つ高ヤング率を有するセラミックスを
用いることにより、露光精度を高めることができるとと
もに、ＸＹステージなどのように、露光位置まで高速移
動するような部材において、その移動後の振動を抑制
し、露光のずれを防止し精度の高い露光処理を行うこと
ができ、ＬＳＩなどの半導体素子の高い信頼性を維持し
つつ量産性を高めることができる。As described in detail above, according to the present invention, as a support member such as a stage in a semiconductor exposure apparatus,
Exposure accuracy can be improved by using ceramics having low thermal expansion and high Young's modulus, and vibrations after the movement of a member such as an XY stage that moves at a high speed to the exposure position can be reduced. It is possible to suppress the shift of exposure, prevent exposure shift, and perform exposure processing with high accuracy, thereby improving mass productivity while maintaining high reliability of a semiconductor element such as an LSI.
【図１】半導体露光装置の概略配置図である。FIG. 1 is a schematic layout diagram of a semiconductor exposure apparatus.
１ 光源 ２ レンズ ３ 半導体ウエハ ４ 静電チャック ５ ステージ DESCRIPTION OF SYMBOLS 1 Light source 2 Lens 3 Semiconductor wafer 4 Electrostatic chuck 5 Stage
Claims (3)
して微細パターンを形成するための露光処理を施こす露
光装置において、前記支持部材が、１０〜４０℃におけ
る熱膨張率が１×１０-6／℃以下であり、ヤング率が１
３０ＧＰａ以上のセラミックスからなることを特徴とす
る半導体露光装置。1. An exposure apparatus for performing an exposure process for forming a fine pattern on a semiconductor wafer mounted on a support member, wherein the support member has a thermal expansion coefficient of 1 × at 10 to 40 ° C. 10 -6 / ° C or less and Young's modulus is 1
A semiconductor exposure apparatus comprising a ceramic of 30 GPa or more.
露光位置まで移動、停止する請求項１記載の半導体露光
装置。2. The semiconductor exposure apparatus according to claim 1, wherein said support member mounts a semiconductor wafer and moves and stops at an exposure position.
体とし、Ｙまたは希土類元素を酸化物換算で３〜１５重
量％の割合で含有することを特徴とする請求項１記載の
半導体露光装置。3. The semiconductor exposure apparatus according to claim 1, wherein said ceramic is mainly made of cordierite and contains Y or a rare earth element in a ratio of 3 to 15% by weight in terms of oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9234634A JPH1174334A (en) | 1997-08-29 | 1997-08-29 | Semiconductor aligner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9234634A JPH1174334A (en) | 1997-08-29 | 1997-08-29 | Semiconductor aligner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1174334A true JPH1174334A (en) | 1999-03-16 |
Family
ID=16974116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9234634A Pending JPH1174334A (en) | 1997-08-29 | 1997-08-29 | Semiconductor aligner |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1174334A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6426790B1 (en) | 2000-02-28 | 2002-07-30 | Nikon Corporation | Stage apparatus and holder, and scanning exposure apparatus and exposure apparatus |
| JP2003163257A (en) * | 2001-11-29 | 2003-06-06 | Canon Inc | Positioning device and its manufacturing method |
| JP2013177272A (en) * | 2012-02-28 | 2013-09-09 | Kyocera Corp | Member for placing and exposure device using the same |
-
1997
- 1997-08-29 JP JP9234634A patent/JPH1174334A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6426790B1 (en) | 2000-02-28 | 2002-07-30 | Nikon Corporation | Stage apparatus and holder, and scanning exposure apparatus and exposure apparatus |
| JP2003163257A (en) * | 2001-11-29 | 2003-06-06 | Canon Inc | Positioning device and its manufacturing method |
| JP2013177272A (en) * | 2012-02-28 | 2013-09-09 | Kyocera Corp | Member for placing and exposure device using the same |
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