JPH1151893A - Contact combustion type gas sensor - Google Patents

Contact combustion type gas sensor

Info

Publication number
JPH1151893A
JPH1151893A JP21350797A JP21350797A JPH1151893A JP H1151893 A JPH1151893 A JP H1151893A JP 21350797 A JP21350797 A JP 21350797A JP 21350797 A JP21350797 A JP 21350797A JP H1151893 A JPH1151893 A JP H1151893A
Authority
JP
Japan
Prior art keywords
heater
gas sensor
combustion type
type gas
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21350797A
Other languages
Japanese (ja)
Other versions
JP3485151B2 (en
Inventor
Takahiko Sasahara
隆彦 笹原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yazaki Corp
Original Assignee
Yazaki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yazaki Corp filed Critical Yazaki Corp
Priority to JP21350797A priority Critical patent/JP3485151B2/en
Publication of JPH1151893A publication Critical patent/JPH1151893A/en
Application granted granted Critical
Publication of JP3485151B2 publication Critical patent/JP3485151B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To enhance the sensitivity by forming a heater and a temperature measuring resistor independently at a detecting part and preventing deterioration even after long term use. SOLUTION: A heater 4 comprising a silicon oxide layer 2, an insulation layer 3 of gas impermeable insulator, and polysilicon is arranged at a detecting part, i.e., a diaphragm part 1a. An insulation layer 5 is formed between the heater 4 and a temperature measuring resistor 6 of platinum while covering the heater 4 to protect against contact with the outer air. An oxidizing catalyst layer 7 of porous alumina is arranged around the temperature measuring resistor 6. A uniform heater 8 composed of boron diffused silicon is arranged on the silicon oxide layer 2 and contributes to make uniform the temperature at a diaphragm part 1a. Since the heater 4 is prevented from touching the outer air, it is protected against deterioration. Furthermore, since the electric resistance can be set independently for the temperature measuring resistor 6 and the heater 4, a most sensitive resistance can be set for a measured gas.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、可燃性ガスを検出
するための接触燃焼式ガスセンサに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a catalytic combustion type gas sensor for detecting flammable gas.

【0002】[0002]

【従来の技術】従来の接触燃焼式ガスセンサの一例を図
6に示す。この図は内部の白金線を見えるようにした部
分透過斜視図である。コイル状になった細い白金線周囲
に触媒を有する多孔質アルミナ担体を配してある。この
ものは使用時には白金線に通電することにより貴金属な
どの酸化触媒を有するアルミナ担体をその触媒能に適し
た温度に保ってある。可燃性ガスがこのガスセンサに達
すると、そのアルミナ担体に配された触媒によって燃焼
し、発熱する。この時の熱変化を白金線の抵抗変化を測
定することにより、可燃性ガスの検出が可能となる。し
かしながらこのような接触燃焼式ガスセンサは熱容量が
大きいため、消費電力が大きいと云う欠点を有してい
た。このため、電池を用いた小型可燃性ガス測定装置へ
の応用に際して問題となっていた。
2. Description of the Related Art FIG. 6 shows an example of a conventional catalytic combustion type gas sensor. This figure is a partially transparent perspective view in which the platinum wire inside can be seen. A porous alumina support having a catalyst is arranged around a thin platinum wire in a coil shape. In use, the alumina carrier having an oxidation catalyst such as a noble metal is kept at a temperature suitable for its catalytic ability by supplying electricity to a platinum wire at the time of use. When the combustible gas reaches the gas sensor, it is burned by a catalyst disposed on the alumina carrier and generates heat. By measuring the change in heat at this time by the change in resistance of the platinum wire, the detection of flammable gas becomes possible. However, such a catalytic combustion type gas sensor has a drawback that power consumption is large because of its large heat capacity. For this reason, there has been a problem in application to a small flammable gas measuring device using a battery.

【0003】このような欠点を改善するセンサとして、
特開平8−94561号でシリコン半導体技術を応用し
た図7(a)及び(b)に示すようなセンサにより低熱
容量化が計られている。すなわち、シリコン基板に酸化
シリコンからなる絶縁層を設け、その上に白金線を有
し、さらに白金線の一部表面を覆う酸化触媒を有する担
体からなる触媒層を有する。なお、白金線側は図6の接
触燃焼式ガスセンサと同じ働きをし、白金線側は熱補正
用素子として働く。なおシリコン基板には空洞部が設け
られ、測定部付近の熱容量低下を計っている。このセン
サは上述のように消費電力が小さく、小型化が容易であ
ると云った長所を有していたが、他方、使用時間が長く
なると劣化し易いと云った欠点を有していた。また、こ
のものは、可燃性ガスに対する出力が小さいと云った欠
点をも有していた。
[0003] As a sensor for improving such disadvantages,
In Japanese Patent Application Laid-Open No. Hei 8-94561, a heat capacity is reduced by a sensor as shown in FIGS. 7A and 7B to which a silicon semiconductor technology is applied. That is, an insulating layer made of silicon oxide is provided on a silicon substrate, a platinum wire is provided thereon, and a catalyst layer made of a carrier having an oxidation catalyst covering a part of the surface of the platinum wire is provided. The platinum wire side has the same function as the contact combustion type gas sensor of FIG. 6, and the platinum wire side works as a heat correction element. Note that a cavity is provided in the silicon substrate to measure a decrease in heat capacity near the measurement unit. As described above, this sensor has the advantages of low power consumption and easy downsizing, but has the disadvantage that it tends to deteriorate as the usage time increases. This also had the disadvantage that the output for combustible gas was small.

【0004】[0004]

【発明が解決しようとする課題】本発明は、長期間使用
しても劣化せず、感度の良い接触燃焼式ガスセンサを提
供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a contact combustion type gas sensor which does not deteriorate even when used for a long time and has high sensitivity.

【課題を解決するための手段】本発明者等は、上記従来
技術に係るセンサ、特に特開平8−94561号に記載
のガスセンサに注目して、その劣化原因を調べた。その
結果、このセンサの白金線は極細配線の薄膜ヒータであ
り、配線幅に比して膜厚が小さくなることから、特定の
部分において電流の集中が起こりやすく、局所的な発熱
が生じ、その結果、ヒータの高温酸化、クラック発生な
どによる抵抗変化が生じることが判った。本発明の接触
燃焼式ガスセンサは上記課題を解決するため、請求項1
に記載のように、検知部にヒータと測温抵抗体とをそれ
ぞれ別に構成として有する。
Means for Solving the Problems The present inventors have focused on the sensor according to the prior art described above, in particular, the gas sensor described in JP-A-8-94561, and examined the cause of its deterioration. As a result, the platinum wire of this sensor is a thin-film heater with extra-fine wiring, and since the film thickness is smaller than the wiring width, current concentration tends to occur in a specific portion, causing local heat generation. As a result, it was found that the resistance changed due to high-temperature oxidation of the heater, crack generation, and the like. The contact combustion type gas sensor according to the present invention solves the above problem.
As described in (1), the detector has a heater and a resistance temperature detector as separate components.

【0005】[0005]

【発明の実施の形態】本発明において検知部にヒータと
測温抵抗体とをそれぞれ別に有することが必要である。
この構成により、劣化しやすく、抵抗の経時変化が大き
いヒータの影響を受けることなく、測温抵抗体により測
定することが可能である。さらに、ヒータの抵抗は消費
電力を小さくするため抵抗値の設定に制限があるが、本
発明においてはヒータと別に測温抵抗体を有するため、
測温抵抗体の電気抵抗を測定に最適な抵抗値に設定する
ことができ、従って高いガス感度を得ることができる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, it is necessary to separately provide a heater and a resistance temperature detector in a detection unit.
With this configuration, it is possible to perform measurement with a resistance temperature detector without being affected by a heater that is easily deteriorated and has a large change in resistance with time. Further, the resistance of the heater is limited in the setting of the resistance value in order to reduce the power consumption. However, in the present invention, since the heater has a temperature measuring resistor separately from the heater,
The electric resistance of the resistance temperature detector can be set to an optimum resistance value for measurement, and therefore, high gas sensitivity can be obtained.

【0006】本発明の接触燃焼式ガスセンサにおいて、
ヒータと測温抵抗体との間に絶縁体が配されていると、
この絶縁体により熱伝導が行われるため望ましい。この
ような絶縁体として、五酸化タンタル、シリコン窒化
物、炭化ケイ素、窒化アルミニウム、及び酸化ハフニウ
ムが挙げられる。なお、このうち、シリコン窒化物、炭
化ケイ素、窒化アルミニウムであると、熱伝導性が高い
ので好ましい。なお、従来の接触燃焼式ガスセンサは、
ヒータは測温抵抗体と兼用であったため、その性質上酸
化触媒を有する多孔質担体により覆われていて、通常空
気などの酸素を含む雰囲気下で加熱されていた。しか
し、本発明の接触燃焼式ガスセンサ、前述のようにヒー
タと測温抵抗体とをそれぞれ別に有するため、ヒータは
外気に接する必要がない。従って、ヒータへの外気の接
触をガス非透過性絶縁体により妨げることが可能とな
る。このような構成によることにより、ヒータ寿命を著
しく延長することができ、温度斑の発生を防止し、経年
変化を極めて小さいものとすることが可能となる。この
ようにヒータと外気との接触を妨げるガス非透過性絶縁
体として五酸化タンタル、シリコン窒化物、炭化ケイ
素、窒化アルミニウム、あるいはリン硼珪酸ガラスを用
いることが可能である。
In the catalytic combustion type gas sensor of the present invention,
If an insulator is placed between the heater and the resistance temperature detector,
This is desirable because heat conduction is performed by the insulator. Such insulators include tantalum pentoxide, silicon nitride, silicon carbide, aluminum nitride, and hafnium oxide. Note that among these, silicon nitride, silicon carbide, and aluminum nitride are preferable because of high thermal conductivity. In addition, the conventional contact combustion type gas sensor,
Since the heater was also used as a resistance temperature detector, it was covered with a porous carrier having an oxidation catalyst by its nature, and was usually heated in an atmosphere containing oxygen such as air. However, since the contact combustion type gas sensor of the present invention has the heater and the temperature measuring resistor separately as described above, the heater does not need to be in contact with the outside air. Therefore, it is possible to prevent the outside air from contacting the heater with the gas impermeable insulator. With such a configuration, the life of the heater can be significantly extended, the occurrence of temperature unevenness can be prevented, and the aging can be made extremely small. As described above, tantalum pentoxide, silicon nitride, silicon carbide, aluminum nitride, or phosphoborosilicate glass can be used as the gas impermeable insulator that prevents contact between the heater and the outside air.

【0007】本発明の接触燃焼式ガスセンサにおいて、
検知部の温度分布を小さくするための均熱体を有するこ
とが望ましい。この均熱体は熱伝導性に優れた材質から
なることが必要で、この働きによりセンサの検知部の温
度分布を均一なものとし、センサ感度を安定したものと
する。なお、この均熱体がボロンを拡散してなるシリコ
ン層であると、作成が容易であり、また、良好な熱伝導
性を有するため望ましい。次に本発明に係る接触燃焼式
ガスセンサの一例αについて図面を用いて説明する。
In the catalytic combustion type gas sensor of the present invention,
It is desirable to have a heat equalizer for reducing the temperature distribution of the detection unit. The heat equalizer needs to be made of a material having excellent heat conductivity, and by this function, the temperature distribution of the detecting portion of the sensor is made uniform, and the sensor sensitivity is stabilized. It is preferable that the heat equalizer is a silicon layer formed by diffusing boron, because it is easy to form and has good thermal conductivity. Next, an example α of the catalytic combustion type gas sensor according to the present invention will be described with reference to the drawings.

【0008】図1(a)に本発明に係る接触燃焼式ガス
センサαの上面図、及び図1(b)にその断面図を示し
てある。図中符号1を付して示してあるのは基板となる
シリコンであり、検知部であるダイアフラム部1aを有
している。このダイアフラム部1aにはシリコン酸化物
層2、ガス非透過性絶縁体であるシリコン窒化膜からな
る絶縁層3、さらにこの絶縁層3の上にはポリシリコン
(多結晶シリコン)からなるヒータ4が配されている。
なお、このセンサαではヒータの材質としてポリシリコ
ンを用いたが、その他、P++シリコン(高濃度にp型不
純物を拡散した領域のシリコン)、酸化ルテニウムある
いは白金等が可能である。しかし、ポリシリコンを用い
ることにより発熱による材料の熱膨張挙動をシリコン酸
化膜の熱膨張挙動及びシリコン窒化膜の熱膨張挙動に非
常に近い物とすることができるため、ヒータ及びダイア
フラムの破壊耐性を高めることができる。
FIG. 1A is a top view of a catalytic combustion type gas sensor α according to the present invention, and FIG. 1B is a sectional view thereof. In the figure, reference numeral 1 denotes silicon serving as a substrate, which has a diaphragm 1a serving as a detection unit. The diaphragm 1a includes a silicon oxide layer 2, an insulating layer 3 made of a silicon nitride film which is a gas impermeable insulator, and a heater 4 made of polysilicon (polycrystalline silicon) on the insulating layer 3. Are arranged.
In this sensor α, polysilicon is used as the material of the heater. However, P ++ silicon (silicon in a region in which p-type impurities are diffused at a high concentration), ruthenium oxide, platinum, or the like can be used. However, by using polysilicon, the thermal expansion behavior of the material due to heat generation can be made very close to the thermal expansion behavior of the silicon oxide film and the thermal expansion behavior of the silicon nitride film. Can be enhanced.

【0009】ヒータ4と白金からなる測温抵抗体6との
間にガス非透過性絶縁体であるシリコン窒化膜からなる
絶縁層5が配されている。この絶縁膜5はヒータ4を被
覆して、外気のヒータ4への接触を妨げている。測温抵
抗体6周囲には酸化触媒としてパラジウムを有する多孔
質アルミナからなる触媒層7が配されている。
An insulating layer 5 made of a silicon nitride film, which is a gas impermeable insulator, is disposed between the heater 4 and a resistance temperature detector 6 made of platinum. The insulating film 5 covers the heater 4 to prevent outside air from contacting the heater 4. A catalyst layer 7 made of porous alumina having palladium as an oxidation catalyst is arranged around the temperature measuring resistor 6.

【0010】また、酸化膜2にはボロンを拡散したシリ
コンからなる均熱体8があり、この検知部であるダイア
フラム部1aの温度の均一化に寄与している。なおダイ
アフラム部1aはシリコン基板1が薄くなっていて、検
知部の熱容量低下によって温度制御が容易となってい
る。このような構成により、この接触燃焼式ガスセンサ
αのヒータ4は外気との接触を妨げられているため、劣
化しにくい。さらに測温抵抗体6の電気抵抗は、ヒータ
4の電気抵抗とは別に設定できるため、被測定ガスに対
して最も感度を良好とする抵抗値にすることが可能であ
る。さらに、ヒータがある程度劣化した場合にも殆ど影
響されずに精度の高い測定が可能となる。
The oxide film 2 has a heat equalizer 8 made of silicon in which boron is diffused, which contributes to uniformizing the temperature of the diaphragm portion 1a serving as a detection portion. It should be noted that the diaphragm portion 1a has a thin silicon substrate 1, and the temperature control is facilitated by a decrease in the heat capacity of the detection portion. With such a configuration, the heater 4 of the contact combustion type gas sensor α is hardly deteriorated because the heater 4 is prevented from contacting with outside air. Furthermore, since the electric resistance of the resistance temperature detector 6 can be set separately from the electric resistance of the heater 4, it is possible to obtain a resistance value that provides the best sensitivity to the gas to be measured. Further, even when the heater is deteriorated to some extent, it is possible to perform highly accurate measurement with almost no influence.

【0011】このような接触燃焼式ガスセンサαは、抵
抗値Rsを有するセンサSとして、接触燃焼式ガスセン
サαと同様に、ただし、触媒層に酸化触媒を有しない温
度補償用センサD(電気抵抗値Rd)と共には図2に示
したようなブリッジ回路に組み込まれて使用される。
Such a catalytic combustion type gas sensor α is a sensor S having a resistance value Rs, similar to the contact combustion type gas sensor α, except that a temperature compensating sensor D (electric resistance value) having no oxidation catalyst in the catalyst layer is used. Rd) is used by being incorporated in a bridge circuit as shown in FIG.

【0012】上記接触燃焼式ガスセンサαは例えば次の
ように作製される。図3(a)に符号1を付して示した
ようなシリコン基板の片面を熱酸化によって酸化して酸
化膜1’を形成する(図3(b)参照)。次いで、この
酸化膜1’にフォトレジスト加工法によりパターニング
して図3(c)に示すように窓を開ける。この窓部にボ
ロンを気相拡散法により拡散して、均熱体8を形成する
(図3(d)参照)。酸化膜1’をウェットエッチング
法により剥離させて除去し(図4(a)参照)、シリコ
ン基板1の均熱体8を設けた面全体を再度熱酸化により
酸化させてシリコン酸化物層2を形成する(図4(b)
参照)。次いで、酸化物層2上にシリコン窒化物からな
る絶縁層3をCVD(化学的気相成長)法により形成す
る(図4(c)参照)。さらに均熱体8に対応する箇所
にポリシリコンからなるヒータ4をCVD法により形成
する(図4(d)参照)。
The contact combustion type gas sensor α is manufactured, for example, as follows. One side of the silicon substrate as indicated by reference numeral 1 in FIG. 3A is oxidized by thermal oxidation to form an oxide film 1 ′ (see FIG. 3B). Next, the oxide film 1 'is patterned by a photoresist processing method to open a window as shown in FIG. Boron is diffused into the window by a vapor phase diffusion method to form a soaking body 8 (see FIG. 3D). The oxide film 1 ′ is removed by peeling off by wet etching (see FIG. 4A), and the entire surface of the silicon substrate 1 on which the heat equalizer 8 is provided is again oxidized by thermal oxidation to form the silicon oxide layer 2. Forming (FIG. 4B)
reference). Next, an insulating layer 3 made of silicon nitride is formed on the oxide layer 2 by a CVD (chemical vapor deposition) method (see FIG. 4C). Further, a heater 4 made of polysilicon is formed at a position corresponding to the heat equalizer 8 by a CVD method (see FIG. 4D).

【0013】このヒータ4を被覆するようガス非透過性
絶縁体であるシリコン窒化物からなる絶縁層5をCVD
法によって形成し(図5(a)参照)、この絶縁層5上
にスパッタリング法により白金製の測温抵抗体6を配す
る(図5(b)参照)。次いで、測温抵抗体6を覆うよ
うに酸化触媒としてパラジウムを含む多孔質アルミナか
らなる触媒層7をパラジウムとアルミナの混合物からな
るターゲットを蒸着して設ける(図5(c)参照)。な
お、ここで蒸着でなくスパッタリングでも触媒層7を得
ることができる。最後にシリコン基板を水酸化カリウム
によりエッチングして、ダイアフラム部1aを形成す
る。なお、ここで水酸化カリウムの代わりに水酸化テト
ラメチルアンモニウムを用いても良い。このようにして
接触燃焼式ガスセンサαを得ることができる(図5
(d)参照)。
An insulating layer 5 made of silicon nitride, which is a gas impermeable insulator, is formed by CVD so as to cover the heater 4.
5 (a), and a platinum resistance temperature detector 6 is disposed on the insulating layer 5 by sputtering (see FIG. 5 (b)). Next, a catalyst layer 7 made of porous alumina containing palladium as an oxidation catalyst is provided by vapor-depositing a target made of a mixture of palladium and alumina so as to cover the resistance bulb 6 (see FIG. 5C). Here, the catalyst layer 7 can be obtained by sputtering instead of vapor deposition. Finally, the silicon substrate is etched with potassium hydroxide to form the diaphragm 1a. Here, tetramethylammonium hydroxide may be used instead of potassium hydroxide. Thus, the contact combustion type gas sensor α can be obtained (FIG. 5).
(D)).

【0014】[0014]

【発明の効果】本発明において検知部にヒータと測温抵
抗体とをそれぞれ別に有するため、劣化しやすく、抵抗
の経時変化が大きいヒータの影響を受けることなく、測
温抵抗体により測定することが可能となる。さらに、ヒ
ータは消費電力を小さくするためその抵抗値の設定に制
限があるが、本発明においてはヒータと別に測温抵抗体
を有するため、測温抵抗体の電気抵抗を測定に最適な抵
抗値に設定することができ、従って高いガス感度を得る
ことができる。
According to the present invention, since the detector has a heater and a resistance temperature detector separately from each other, it is easy to deteriorate and the resistance is greatly changed with time. Becomes possible. Further, the heater has a limitation in the setting of its resistance value in order to reduce power consumption. However, in the present invention, since the heater has a temperature measuring resistor separately from the heater, an optimal resistance value for measuring the electric resistance of the temperature measuring resistor is used. , So that high gas sensitivity can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る接触燃焼式ガスセンサの一例αを
示す図である。 (a)上面図 (b)断面図
FIG. 1 is a diagram showing an example α of a contact combustion type gas sensor according to the present invention. (A) Top view (b) Cross-sectional view

【図2】本発明に係る接触燃焼式ガスセンサの一例αを
センサSとして組み込んだ検出回路の例を示す図であ
る。
FIG. 2 is a diagram showing an example of a detection circuit in which an example α of a catalytic combustion type gas sensor according to the present invention is incorporated as a sensor S.

【図3】本発明に係る接触燃焼式ガスセンサの一例αの
製造工程を示す図である。
FIG. 3 is a view showing a manufacturing process of an example α of the catalytic combustion type gas sensor according to the present invention.

【図4】本発明に係る接触燃焼式ガスセンサの一例αの
製造工程を示す図である。
FIG. 4 is a view showing a manufacturing process of an example α of the catalytic combustion type gas sensor according to the present invention.

【図5】本発明に係る接触燃焼式ガスセンサの一例αの
製造工程を示す図である。
FIG. 5 is a diagram showing a manufacturing process of an example α of the catalytic combustion type gas sensor according to the present invention.

【図6】従来の接触燃焼式ガスセンサの一例を示す図で
ある。
FIG. 6 is a diagram showing an example of a conventional catalytic combustion type gas sensor.

【図7】従来の接触燃焼式ガスセンサの他の例を示す図
である。 (a)断面図 (b)上面図
FIG. 7 is a diagram showing another example of a conventional catalytic combustion type gas sensor. (A) Cross-sectional view (b) Top view

【符号の説明】[Explanation of symbols]

1 シリコン基板 1’ 酸化膜 1a ダイアフラム部 2 シリコン酸化物層 3 絶縁層 4 ヒータ 5 絶縁層 6 測温抵抗体 7 触媒層 8 均熱体 DESCRIPTION OF SYMBOLS 1 Silicon substrate 1 'Oxide film 1a Diaphragm part 2 Silicon oxide layer 3 Insulating layer 4 Heater 5 Insulating layer 6 Resistance thermometer 7 Catalyst layer 8 Soaking body

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 検知部にヒータと測温抵抗体とをそれぞ
れ別に有することを特徴とする接触燃焼式ガスセンサ。
1. A catalytic combustion type gas sensor, wherein a detection unit has a heater and a resistance temperature detector separately.
【請求項2】 上記ヒータと測温抵抗体との間に絶縁体
が配されていることを特徴とする請求項1に記載の接触
燃焼式ガスセンサ。
2. The catalytic combustion type gas sensor according to claim 1, wherein an insulator is arranged between the heater and the resistance temperature detector.
【請求項3】 上記ヒータがガス非透過性絶縁体により
外気との接触を妨げられていることを特徴とする請求項
1または請求項2に記載の接触燃焼式ガスセンサ。
3. The contact combustion type gas sensor according to claim 1, wherein the heater is prevented from contacting with outside air by a gas impermeable insulator.
【請求項4】 上記ガス非透過性絶縁体が五酸化タンタ
ル、シリコン窒化物、炭化ケイ素、窒化アルミニウム、
及び酸化ハフニウム、リン硼珪酸ガラスより選ばれた1
つ以上よりなることを特徴とする請求項1ないし請求項
3のいずれかに記載の接触燃焼式ガスセンサ。
4. The method according to claim 1, wherein the gas impermeable insulator is tantalum pentoxide, silicon nitride, silicon carbide, aluminum nitride,
And one selected from hafnium oxide and phosphoborosilicate glass
The catalytic combustion type gas sensor according to any one of claims 1 to 3, wherein the gas sensor comprises at least one.
【請求項5】 上記絶縁体が、シリコン窒化物からなる
薄膜であることを特徴とする請求項2に記載の接触燃焼
式ガスセンサ。
5. The catalytic combustion type gas sensor according to claim 2, wherein the insulator is a thin film made of silicon nitride.
【請求項6】 検知部の温度分布を小さくするための均
熱体を有することを特徴とする請求項1ないし請求項5
に記載の接触燃焼式ガスセンサ。
6. A heat equalizing body for reducing a temperature distribution of the detecting section.
4. The contact combustion gas sensor according to claim 1.
【請求項7】 上記均熱体が、ボロンを拡散してなるシ
リコンからなるものであることを特徴とする請求項6に
記載の接触燃焼式ガスセンサ。
7. The catalytic combustion type gas sensor according to claim 6, wherein the heat equalizing body is made of silicon in which boron is diffused.
JP21350797A 1997-08-07 1997-08-07 Contact combustion type gas sensor Expired - Fee Related JP3485151B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21350797A JP3485151B2 (en) 1997-08-07 1997-08-07 Contact combustion type gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21350797A JP3485151B2 (en) 1997-08-07 1997-08-07 Contact combustion type gas sensor

Publications (2)

Publication Number Publication Date
JPH1151893A true JPH1151893A (en) 1999-02-26
JP3485151B2 JP3485151B2 (en) 2004-01-13

Family

ID=16640346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21350797A Expired - Fee Related JP3485151B2 (en) 1997-08-07 1997-08-07 Contact combustion type gas sensor

Country Status (1)

Country Link
JP (1) JP3485151B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051854A (en) * 1997-06-04 2000-04-18 Stmicroelectronics S.R.L. Integrated semiconductor device comprising a chemoresistive gas microsensor and manufacturing process thereof
JP2001099801A (en) * 1999-09-29 2001-04-13 Yazaki Corp Contact combustion type gas sensor
WO2003062137A2 (en) * 2002-01-16 2003-07-31 The Regents Of The University Of Michigan Method of making a thick microstructural oxide layer and device utilizing same
JP2008076328A (en) * 2006-09-25 2008-04-03 Citizen Holdings Co Ltd Gas sensor
WO2008123092A1 (en) * 2007-03-28 2008-10-16 Horiba, Ltd. Combustible gas sensor
JP2009079910A (en) * 2007-09-25 2009-04-16 Citizen Watch Co Ltd Thin-film gas sensor
JP2012037413A (en) * 2010-08-09 2012-02-23 Fis Inc Sensing element and contact combustion type gas sensor
JP2016061593A (en) * 2014-09-16 2016-04-25 ヤマハファインテック株式会社 Catalytic combustion type gas sensor
JP2016061592A (en) * 2014-09-16 2016-04-25 ヤマハファインテック株式会社 Catalytic combustion type gas sensor

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051854A (en) * 1997-06-04 2000-04-18 Stmicroelectronics S.R.L. Integrated semiconductor device comprising a chemoresistive gas microsensor and manufacturing process thereof
US6248609B1 (en) 1997-06-04 2001-06-19 Stmicroelectronics S.R.L. Integrated semiconductor device comprising a chemoresistive gas microsensor and manufacturing process thereof
JP2001099801A (en) * 1999-09-29 2001-04-13 Yazaki Corp Contact combustion type gas sensor
WO2003062137A2 (en) * 2002-01-16 2003-07-31 The Regents Of The University Of Michigan Method of making a thick microstructural oxide layer and device utilizing same
WO2003062137A3 (en) * 2002-01-16 2003-12-31 Univ Michigan Method of making a thick microstructural oxide layer and device utilizing same
US6962831B2 (en) 2002-01-16 2005-11-08 The Regents Of The University Of Michigan Method of making a thick microstructural oxide layer
JP2008076328A (en) * 2006-09-25 2008-04-03 Citizen Holdings Co Ltd Gas sensor
WO2008123092A1 (en) * 2007-03-28 2008-10-16 Horiba, Ltd. Combustible gas sensor
JP2009079910A (en) * 2007-09-25 2009-04-16 Citizen Watch Co Ltd Thin-film gas sensor
JP2012037413A (en) * 2010-08-09 2012-02-23 Fis Inc Sensing element and contact combustion type gas sensor
JP2016061593A (en) * 2014-09-16 2016-04-25 ヤマハファインテック株式会社 Catalytic combustion type gas sensor
JP2016061592A (en) * 2014-09-16 2016-04-25 ヤマハファインテック株式会社 Catalytic combustion type gas sensor

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