JPH11350169A - Wet etching apparatus and wet etching method - Google Patents

Wet etching apparatus and wet etching method

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Publication number
JPH11350169A
JPH11350169A JP19943298A JP19943298A JPH11350169A JP H11350169 A JPH11350169 A JP H11350169A JP 19943298 A JP19943298 A JP 19943298A JP 19943298 A JP19943298 A JP 19943298A JP H11350169 A JPH11350169 A JP H11350169A
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Prior art keywords
etching
liquid
medicinal
processing
wet
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Pending
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JP19943298A
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Japanese (ja)
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Koji Honma
孝治 本間
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Chemitoronics Co
株式会社ケミトロニクス
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Abstract

PROBLEM TO BE SOLVED: To inexpensively provide homogeneous precision parts by providing an etching apparatus capable of executing anisotropic etching in wet etching and a process for producing the same, thereby executing processing of fine sizes and making mass production. SOLUTION: This etching apparatus has a component section for ejecting a pressurized medicinal liquid 5 from a nozzle 4 and perpendicularly applying this medicinal liquid to a sample 1 surface and has a mechanism of splashing the medicinal liquid after processing from the sample surface by a high-pressure gas 6 or a mechanism of neutralizing the medicinal liquid as side etching progresses and anisotropic etching collapses if the medicinal liquid remains as it is in the processing section without being pressurized.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、半導体結晶、金属およびガラス板などの材料を薬液でウエットエッチングする装置とその製造方法に関する。 The present invention relates to a semiconductor crystal, and a method for manufacturing apparatus for wet etching a material such as metal and glass plate chemical.

【0002】 [0002]

【従来の技術】半導体結晶、金属および絶縁膜などの材料を精密に微細加工する製造工程ではウエットエッチングが多用され、現在も重要な技術の一つとして位置付けられている。 BACKGROUND OF THE INVENTION Semiconductor crystal, the manufacturing process of precisely micromachining of materials such as metal and an insulating film is wet-etched is frequently used, it is still positioned as one of the important techniques. ウエットエッチングは試料表面に任意の凹凸パターンを形成したり、試料表面の鏡面仕上げや基板研磨に使われている。 Wet etching or form any uneven pattern on the sample surface, are used to a mirror finish and substrate polishing of the sample surface. 凹凸の形状は通常、試料表面にホトレジストでパターンを形成し、これをマスクにして試料の材料をウエットエッチングすることによって大量に得られるので、ウエットエッチングは低コストの簡便な加工技術である。 The shape of irregularities typically forms a pattern in the photoresist on the sample surface, since obtained in large quantities by wet etching a material sample by this to a mask, wet etching is a simple processing technique cost.

【0003】 [0003]

【発明が解決しようとする課題】しかしながら、ウエットエッチングは等方性エッチングであるため、マスク端はアンダーエッチングされ、いわゆるサイドエッチング量が大きく、マスク寸法通りの加工ができない欠点があった。 [SUMMARY OF THE INVENTION However, wet etching for an isotropic etch, mask end is under-etched, so-called side etching amount is large, there is a drawback that can not be processed as the mask dimension. このため、従来のウエットエッチングでは数μm Therefore, the number in the conventional wet etching μm
の深さの加工には数μmのパターン寸法までが限界とされ、これよりも微細な加工は高価なドライエッチング装置を用いた技術で行われている。 The in depth processing is to pattern dimension of a few μm is the limit, microfabrication than this is done in a technique using an expensive dry etching apparatus. また、従来のウエットエッチングでは一般に精密加工を行う場合にはエッチング速度を極端に小さくするため、加工時間が長くなったり、マスクと試料の密着性が劣化し、エッチングの不良率が増えてコスト高になる欠点があった。 Further, in order to extremely reduce the etching rate when the conventional wet etching generally carried out precision machining, machining or time is prolonged, the mask and the adhesion of the sample is degraded, it costs increasing failure rate of etching there is a disadvantage to be. このため、本発明はウエットエッチングにおいて異方性エッチングのできるエッチング装置とその製造方法を提供し、これによって微細寸法の加工を行い、大量生産することにより均質な精密部品を安価に提供することを目的としている。 Therefore, that the present invention provides an etching apparatus and a manufacturing method thereof capable of anisotropic etching in the wet etching, thereby performs a processing of fine dimensions, provides an inexpensive homogeneous precision parts by mass production it is an object.

【0004】 [0004]

【課題を解決するための手段】ウエットエッチングで異方性エッチングを行うためには試料表面を垂直に削る異方性成分が必要である。 In order to perform an anisotropic etching by wet etching SUMMARY OF THE INVENTION it is required anisotropic component cutting the sample surface perpendicularly. この目的を達成するために本発明の基本とするエッチング装置は加圧した薬液をノズルから噴出させ、これを試料表面に垂直に当てる構成部をもつことを基本としている。 Etching apparatus which is based the present invention in order to achieve this object by ejecting pressurized chemical liquid from the nozzle, and basically to have a component directing this perpendicular to the sample surface. 実験によると垂直に噴出した薬液の圧力は高いほど試料材料を削るエッチング速度が速くなり、大気との差圧を1気圧以上に加圧して用いると、薬液だけに浸ける従来法に比べて2倍以上に速くできることがわかった。 The pressure of the chemical liquid ejected perpendicularly Experimental faster the etching rate to shave a higher sample material, when used in pressurized differential pressure between the atmosphere above 1 atm, 2 times as compared with the conventional method dipping only in the chemical It was found to be faster than. これは薬液の分子の運動エネルギによって化学反応が促進され通常よりも削られやすくなるためと推察できる。 This can be inferred for easily scraped than normal is accelerated chemical reaction by the kinetic energy of the molecules of the liquid medicine. 薬液が加工部に加圧されずにそのままとどまっているとサイドエッチが進行し異方性エッチングがくずれるので、加工後の薬液を高圧ガスで試料表面から飛散させる機構、あるいは薬液を中和する機構を持った装置構成が本発明の特徴の一つである。 Since the chemical liquid is directly stayed by which the side etching proceeds anisotropically etched without pressurized working portion collapses, mechanism to scatter from the sample surface a chemical post-processing with high pressure gas or mechanism to neutralize the chemical, device configuration having a is one of the features of the present invention. エッチングノズルから噴出した薬液(キャリヤガスを含む場合もある)は試料表面のいたるところに飛散するので、 Since (also may include a carrier gas) is scattered throughout the sample surface jetted chemical from the etching nozzle,
これらを除去するには高圧ガスを噴き出す乾燥用ノズルを設置した構成になる。 Made to the configuration installed drying nozzle spewing the high pressure gas to remove these. あるいは、試料表面に中和液を供給し加工後の薬液を中和する機能を設置した構成になる。 Alternatively, the installed configuration in which the function to neutralize the chemical after processing supplies neutralization liquid on the sample surface. 中和液は表面に張っておいてもノズルから供給してもよい。 Neutralization liquid may be supplied from the nozzle be previously stretched on the surface.

【0005】 [0005]

【発明の実施の形態】図1は本発明によるウエットエッチング装置の主要部を側面からみた一実施例である。 Figure 1 DETAILED DESCRIPTION OF THE INVENTION is an embodiment viewed a main part of a wet etching apparatus according to the present invention from the side. マスクパターン2を形成した試料1は移動機構部10に固定され、この試料表面に対向してエッチングノズル4が配置されている。 Sample 1 formed a mask pattern 2 is fixed to the moving mechanism portion 10 is disposed etching nozzle 4 to face the sample surface. エッチングノズル4からは高圧窒素ガス6とエッチング用薬液5、5'が噴出され、これによって被エッチング部3が加工される。 From the etching nozzle 4 it is ejected high-pressure nitrogen gas 6 and an etching chemical 5,5 ', whereby the etching unit 3 is processed. また、乾燥用ノズル7は試料表面に残った薬液を飛散させ、乾燥するためのもので、ここから乾燥用高圧窒素ガス8が試料表面に供給される。 Further, the drying nozzle 7 is scattered the remaining chemical solution to the sample surface, for the purpose of drying, drying high pressure nitrogen gas 8 is supplied to the sample surface from here. エッチングノズル4の噴き出し口の形状は丸状、もしくは帯状であって、試料全面にわたって均一なエッチングができるように、この形状に応じて移動機構部10の掃引が行われる。 Of the ejection port shape round shape etching nozzle 4, or a strip, to allow uniform etching over the entire surface of the sample, sweeping of the moving mechanism portion 10 is performed according to this shape. この機構は相対的な動きがあればよいので、試料を固定して、ノズルを掃引してもよい。 This mechanism may be any relative motion, samples were fixed, it may be swept nozzle. 乾燥用ノズル7は試料の全面に薬液をとどめないために帯状の噴き出し口の形状が好ましい。 Drying nozzles 7 is preferably shaped of a strip-shaped ejection holes in order to do not have their chemical over the entire surface of the sample. 図1ではエッチングノズル4は高圧窒素ガス6とエッチング用薬液5、5'を個別に供給する形状の例を示したが、これはどちらから供給してもよく、また、ノズルの口は1つにして、1箇所から加圧した薬液や、高圧窒素ガスを一緒にした薬液を噴出させてもよい。 The etching nozzle 4 in Figure 1 shows an example of individually supplying shaped high-pressure nitrogen gas 6 and an etching chemical 5,5 ', which may be supplied from either, also, the mouth of the nozzle is one a manner, the chemical liquid and pressurized from one location, may be ejected chemical solution with high-pressure nitrogen gas. 高圧ガスは窒素に限定されず、圧縮空気等を用途に応じて適用してもよい。 High pressure gas is not limited to nitrogen, it may be applied depending on the application of compressed air or the like.

【0006】図1の装置を用いてマイクロマシーン用S [0006] S for micromachines using the apparatus of FIG. 1
i部品を異方性エッチングで形成する方法例を以下に述べる。 The example method for forming the i-parts anisotropic etching described below. まず、Siの試料表面にSiO2膜を形成し、この上にホトレジスト層を塗布し、ホトリソグラフィによりマスクパターンを形成する。 First, an SiO2 film is formed on the sample surface of the Si, a photoresist layer is coated on this, a mask pattern is formed by photolithography. 次にこの試料をエッチング装置に設置してエッチングを行う。 Then etching is performed by installing the sample to the etching apparatus. SiO2膜はHF SiO2 film is HF
系の薬液、SiはKOH水溶液の薬液を用いる。 Chemical systems, Si is used a chemical KOH solution. 試料表面にエッチングノズルから垂直に上記の薬液を噴出し、 The above chemical ejected vertically from the etching nozzle to the sample surface,
まず、SiO2膜を、続いてSiを加工する。 First, an SiO2 film, followed by processing the Si. 飛散した薬液が試料表面に残留しないよう乾燥用ノズルから高純度の高圧窒素ガスを表面に吹き付ける。 From the drying nozzle so that scattered chemical liquid does not remain on the sample surface blowing high purity high pressure nitrogen gas to the surface. 薬液の圧力は1.5気圧以上からエッチング速度が上昇し、生産性向上にとって適当である。 The pressure of the chemical solution has an etching rate increased from 1.5 atm, it is suitable for improving productivity. この方法でSiの加工形状はマスクパターンの寸法通りになり、ほぼ垂直の断面形状をもった高アスペクト比の孔が得られた。 Machining shape of Si in this way becomes to scale the mask pattern, holes having a high aspect ratio is obtained with a substantially vertical cross-sectional shape.

【0007】図2は本発明によるウエットエッチング装置の主要部を側面からみた別の実施例である。 [0007] Figure 2 shows another embodiment viewed a main part of a wet etching apparatus according to the present invention from the side. マスクパターン22を形成した試料21は移動機構部20に固定され、この試料表面に対向してエッチングノズル24が配置されている。 Samples 21 forming a mask pattern 22 is fixed to the moving mechanism section 20, the etching nozzle 24 to face is disposed on the sample surface. エッチングノズル24からは高圧窒素ガス26とエッチング用薬液25、25'が噴出され、 High-pressure nitrogen gas 26 and the etching chemical liquid 25, 25 'is ejected from the etching nozzle 24,
これによって被エッチング部23が加工される。 Thus the etching unit 23 is processed. また、 Also,
試料表面にはエッチング用薬液を中和するための中和液29があり、これは中和用ノズルから試料表面に供給しても、中和液に試料を浸たしてあってもよい。 The surface of the sample has neutralizing solution 29 for neutralizing an etching chemical, which may be supplied to the sample surface from the neutralization nozzle may be each other to ensure adequate immersion of the sample in the neutralizing solution. エッチングノズル24の噴き出し口の形状や移動部機構は図1の説明で述べたものと同様である。 Ejection holes of the shape and the movement unit mechanism of the etching nozzle 24 is the same as that described with reference to FIG.

【0008】図2の装置を用いてTiのマイクロメッシュ部品を異方性エッチングで形成する方法例を以下に述べる。 [0008] The exemplary method of forming an anisotropic etching micromesh parts of Ti using the apparatus of FIG. 2 will be described below. まず、Ti板の試料表面にホトレジスト層を形成し、ホトリソグラフィによりマスクパターンを形成する。 First, a photoresist layer was formed on the sample surface of the Ti plate, forming a mask pattern by photolithography. 次にこの試料をエッチング装置に設置してエッチングを行う。 Then etching is performed by installing the sample to the etching apparatus. エッチングノズルから試料表面に垂直に噴出する薬液はHFの水溶液で、この圧力は約3気圧と高くし、高速に加工する。 Chemical liquid ejected perpendicularly to the sample surface from the etching nozzle with an aqueous solution of HF, the pressure is as high as about 3 atmospheres, is processed at high speed. 試料表面には中和液が張ってあり、エッチングはエッチングノズルから噴出した領域だけが進行し、飛散した薬液や中和液は中和されて反応がなくなる。 The sample surface Yes stretched neutralization solution, etching only the area ejected from the etching nozzle progresses and scattered chemical liquid and neutralization liquid reaction is eliminated is neutralized. 厚さ約10μmのTi板に5μm□の垂直形状の貫通孔が得られ精度の高いマイクロメッシュが容易に得られた。 High micromesh accurate through holes is obtained having a thickness of about 10μm of the Ti plate 5 [mu] m □ vertical shape is easily obtained.

【0009】以上、ウエットエッチングで異方性エッチングを行う実施例を述べたが、本発明の主旨から、エッチングノズルから噴出される薬液は液体のみに限定されることはなく、液体と固体の混合液であってもよいことを付言する。 [0009] Having described an example of performing anisotropic etching by wet etching, from the gist of the present invention, the chemical liquid ejected from the etching nozzle is not limited only to the liquid, mixing of the liquid and solid an additional note that it may be a liquid. この場合の固体は薬液を低温化にして発生した固形物であったり、薬液に添加した微粒子であってもよい。 Solids of this case or a solid generated by the low temperature the chemical solution may be fine particles added to the drug solution. また、試料表面に薬液が残らない程度の速度で試料を高速回転しながら、エッチングノズルから薬液を噴出してエッチングする装置でも異方性エッチングができることも付言する。 Furthermore, while high-speed rotation of the sample at a rate that the sample surface does not remain liquid medicine, by ejecting the chemical from the etching nozzle also added that it can anisotropically etching or apparatus for etching. この場合は均一な加工をするためにエッチングノズルに移動機構部が付加されている。 Moving mechanism portion is added to the etching nozzle for this case is uniform processing. 本発明による異方性形エッチングはドライエッチングに比べて装置の構成が簡単であり低コストで実現できる特徴がある。 Anisotropic shaped etching according to the invention is simple to configure the device as compared with the dry etching has the characteristic that can be realized at a low cost. また、加工歪が試料に残らないので半導体素子の製造装置として特に有効である。 Further, it is particularly effective as a manufacturing apparatus for a semiconductor device because work strain is not left in the sample. 本発明の装置では活性のエッチング液が試料表面に残留しないのでエッチングマスクの劣化が少なく、また、エッチング速度の大きな薬液も使用できるので、加工時間が短縮でき、部品の製造単価を安くできる特徴がある。 Less deterioration of the etching mask the etching solution of the active does not remain on the sample surface in the apparatus of the present invention, also, a large chemical etch rates may also be used, can be shortened processing time, the features that can cheaply manufacturing costs of the component is there. 本発明の装置および製造方法によって高精度を要求されるマイクロマシーンなどの部品を低コストで提供できる見通しが得られた。 Outlook that can provide components such as micromachine requiring high accuracy by the apparatus and the manufacturing method of the present invention at a low cost is obtained.

【0010】 [0010]

【発明の効果】(1)試料表面に垂直に薬液を噴出し、 The chemical injected vertically, according to the present invention (1) the sample surface,
飛散した薬液を処理することにより、ウエットエッチングで異方性加工ができるようになり、微細加工に対応できるようになった。 By processing the scattered chemical liquid, will be able to anisotropic processing by wet etching, it was able to correspond to the fine processing. (2)本発明の装置は低コストで製造でき、加工時間の短縮により部品の製造単価を安くでき、高精度の部品を低コストで提供できる見通しが得られた。 (2) apparatus of the present invention can be manufactured at a low cost, can cheaper manufacturing cost of the component by shortening processing time, expected a high precision of the parts can be provided at low cost is obtained.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の1実施例であるウエットエッチング装置の主要部の側面図。 Side view of a main part of a wet etching apparatus which is an embodiment of the present invention; FIG.

【図2】本発明の他の実施例であるウエットエッチング装置の主要部の側面図。 Side view of a main part of a wet etching apparatus according to another embodiment of the present invention; FIG.

【符号の説明】 DESCRIPTION OF SYMBOLS

1、21…試料 2、22…マスクパターン 3、23…被エッチング部 10、20…移動機構部 4、24…エッチングノズル 5、5'、25、25'…エッチング用薬液 6、26…高圧窒素ガス 7…乾燥用ノズル 8…乾燥用高圧窒素ガス 29…中和液 1,21 ... Sample 2,22 ... mask pattern 3, 23 ... to be etched portion 10, 20 ... moving mechanism 4, 24 ... etching nozzle 5, 5 ', 25, 25' ... etching chemical solution 6, 26 ... pressure nitrogen gas 7 ... drying nozzle 8 ... drying high-pressure nitrogen gas 29 ... neutralization solution

Claims (6)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 試料をウエットエッチングする装置において、加圧した薬液をエッチングノズルから試料表面に噴出させる機構を持った構成であることを特徴としたウエットエッチング装置。 1. A wet etching apparatus, wherein the at sample device for wet etching of a configuration having a mechanism for ejecting the sample surface under pressure chemical from the etching nozzle.
  2. 【請求項2】 加圧した薬液は高圧ガスの噴出によって形成されることを特徴とした請求項1記載のウエットエッチング装置。 2. A pressurized chemical wet etching apparatus according to claim 1 wherein characterized in that it is formed by the ejection of high-pressure gas.
  3. 【請求項3】 噴出後に試料表面に飛散した薬液を高圧ガスの噴射によって試料表面から除去させる機構を持った構成であることを特徴とした請求項1と2記載のウエットエッチング装置。 3. A wet etching apparatus according to claim 1 and 2 wherein the wherein the chemical liquid scattered on the sample surface after ejection is a configuration having a mechanism for removing from the sample surface by injection of high pressure gas.
  4. 【請求項4】 噴出後に試料表面に飛散した薬液を中和液で中和させる機構を持った構成であることを特徴とした請求項1と2記載のウエットエッチング装置。 4. A wet etching apparatus according to claim 1 and 2 wherein the wherein the chemical liquid scattered on the sample surface after ejection is a configuration having a mechanism for neutralizing with a neutralizing solution.
  5. 【請求項5】 試料表面にマスクパターンを形成する工程と、試料を請求項3記載のウエットエッチング装置に設置する工程と、試料表面にエッチングノズルから加圧した薬液を噴出し、飛散した薬液が試料表面に残留しないよう乾燥用ノズルから高純度の高圧窒素ガスを表面に吹き付ける工程とを基本として試料表面をエッチングすることを特徴としたウエットエッチングの方法。 Forming a mask pattern to 5. A sample surface, a step of placing the sample in the wet etching apparatus according to claim 3, wherein the pressurized chemical solution from the etching nozzle ejected the sample surface, it is scattered chemical the method of wet etching is characterized by etching the surface of the sample of high purity high pressure nitrogen gas from the drying nozzle so as not to remain on the sample surface as a base and the step of spraying the surface.
  6. 【請求項6】 試料表面にマスクパターンを形成する工程と、試料を請求項4記載のウエットエッチング装置に設置する工程と、試料表面にエッチングノズルから加圧した薬液を噴出し、飛散した薬液を試料表面で中和液で中和させる工程とを基本として試料表面をエッチングすることを特徴としたウエットエッチングの方法。 Forming a mask pattern to 6. sample surface, a step of placing the sample in the wet etching apparatus according to claim 4, wherein the pressurized drug solution ejected from the etching nozzle to the sample surface, the scattered chemical liquid the method of wet etching is characterized by etching the sample surface and the step of neutralizing with a neutralizing solution in the sample surface as a base.
JP19943298A 1998-06-10 1998-06-10 Wet etching apparatus and wet etching method Pending JPH11350169A (en)

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EP1168419A1 (en) * 2000-06-19 2002-01-02 Interuniversitair Micro-Elektronica Centrum Method and apparatus for localized liquid treatment of the surface of a substrate
US6398975B1 (en) 1997-09-24 2002-06-04 Interuniversitair Microelektronica Centrum (Imec) Method and apparatus for localized liquid treatment of the surface of a substrate
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
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US6851435B2 (en) 1997-09-24 2005-02-08 Interuniversitair Microelektronica Centrum (Imec, Vzw) Method and apparatus for localized liquid treatment of the surface of a substrate
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