JPH11344603A - Black mask, color filter, liquid crystal display, and production of black mask - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a black mask, in which a film peeling, etc., do not occur, a color filter, a liquid crystal display and a process for producing the black mask. SOLUTION: This black mask has an antireflection film 3 which is formed on a transparent substrate 2 and consists of a chromium compd., a first light shielding film 4 which is formed on an antireflection film 3 and consists of metal chromium, divided films 5 which consist of a chromium compd. and a second light shielding film 6 which consists of the metal chromium. An antireflection film consisting of a chromium compd. of a different compsn. may be interposed between the antireflection film 3 and the first light shielding film 4. The chromium compds. of the antireflection film 3 and the divided films 5 contain at least one kind selected from the group consisting of a chromium oxide, chromium nitride, chromium carbide, chromium oxynitride, chromium oxycarbide, chromium nitrocarbide and chromium oxynitrocarbide.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a black mask,
The present invention relates to a method for manufacturing a color filter, a liquid crystal display, and a black mask.

[0002]

2. Description of the Related Art A color liquid crystal display of the STN type or the TFT type is provided with a color filter at a position facing a liquid crystal layer. The color filter has a colored resin separated by a black mask, and the characteristics of the black mask affect the visibility of the liquid crystal display. As shown in FIG. 5, a conventional black mask is provided with an anti-reflection film made of a chromium compound such as a chromium oxide film on a transparent substrate for the purpose of high light-shielding properties and reducing the reflectance in the visible light region. Or a two-layer structure in which two layers are formed and a light-shielding film made of chromium metal is formed thereon, or
A black mask having a layer structure is used.

[0003]

The light-shielding film has a purpose of shielding light leakage from between pixels, and generally has a thickness of 100 nm.
It is formed from a metal chromium layer of nm or more. However, when the thickness of the metal chromium layer is increased in order to increase the light blocking ratio, the film stress increases accordingly, causing film distortion, film peeling, and the like.

The present invention provides a black mask which is free from film distortion, film peeling, etc. by reducing film stress.
It is an object to provide a color filter and a liquid crystal display.

[0005]

In order to solve the above-mentioned problems, a black mask of the present invention is formed on a transparent substrate, and comprises at least one antireflection film made of a metal compound film; A black mask having a light-shielding film formed thereon and having a metal film divided in at least one layer by a metal compound film in at least one layer reduces a generated film stress, and reduces occurrence of film distortion, film peeling, and the like. I found that.

In the light-shielding film, it is preferable that the metal chromium film is divided in the thickness direction by at least one or more chromium compound films.

The chromium compound film dividing the light-shielding film is at least one selected from the group consisting of chromium oxide, chromium nitride, chromium carbide, chromium oxynitride, chromium oxycarbide, chromium oxynitride and chromium oxynitride carbide. It is preferable to include one kind.

Further, the antireflection film is made of chromium oxide,
It is preferable to include at least one selected from the group consisting of chromium nitride, chromium carbide, chromium oxynitride, chromium oxycarbide, chromium oxynitride, and chromium oxynitride carbide.

The method for manufacturing such a black mask is as follows.
An antireflection film having a composition different from at least one selected from the group consisting of chromium oxide, chromium nitride, chromium carbide, chromium oxynitride, chromium oxycarbide, chromium oxynitride carbide, and chromium oxynitride carbide on a transparent substrate 1
Forming a first light-shielding film containing metallic chromium on the antireflection film; and forming chromium oxide, chromium nitride, chromium carbide, chromium oxynitride, and chromium oxide on the first light-shielding film. Forming a divided film containing at least one selected from the group consisting of carbide, chromium nitrided carbide and chromium oxynitride carbide; and forming a second light-shielding film containing metallic chromium on the divided film.

Further, the color filter according to the present invention comprises:
The black mask, a transparent substrate on which the black mask is formed, and a colored resin disposed in a plurality of openings of the black mask are provided. This color filter separates the light transmitted through the colored resin because the black mask separates the colored resin disposed in the opening. Since the wavelength dependence of the reflectance and reflectance of the light irradiated on the black mask through the transparent substrate is small, the ratio of the reflected light to the light transmitted through the colored resin can be reduced,
The visibility of light transmitted through the colored resin can be improved.

Further, the liquid crystal display according to the present invention comprises:
A first substrate having the color filter, a second substrate having a plurality of electrodes, and being sandwiched between the first and second substrates;
A liquid crystal layer whose orientation can be changed for each region facing the plurality of openings of the black mask by applying a predetermined potential to the electrode is provided.

In this liquid crystal display, by applying a predetermined potential to the electrodes, the orientation can be changed for each region of the liquid crystal layer opposed to the plurality of openings of the black mask, so that the input is made to the liquid crystal layer. The amount of light can be controlled for each opening of the black mask. Since the colored resin is arranged in the opening of the black mask,
Light of a wavelength component corresponding to the colored resin can be emitted for each of the regions. Since the color filter of this liquid crystal display can improve the visibility of light transmitted through the colored resin, a clear image can be displayed on this liquid crystal display.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A black mask according to an embodiment of the present invention will be described below using a color filter having a black mask. The same elements will be denoted by the same reference symbols, without redundant description.

(First Embodiment) FIG. 1 is an example of a sectional view of a color filter 1 provided with a black mask having a four-layer structure according to the present invention. The color filter 1 includes a transparent glass substrate 2 and a black mask BM (black matrix) composed of a reflection preventing film 3, a first light shielding film 4, a division film 5 and a second light shielding film 6 sequentially deposited on the transparent glass substrate 2. )When,
Overcoat layer 7 formed on black mask BM
And a transparent electrode 8 formed on the overcoat layer 7. Further, a polarizing plate 9 is attached to the back surface of the transparent glass substrate 2.

The anti-reflection film 3 contains at least one of the group consisting of chromium oxide, chromium nitride, chromium carbide, chromium oxynitride, chromium oxycarbide, chromium oxynitride and chromium oxynitride carbide, and has a refractive index of The composition is adjusted so that the extinction coefficient and the extinction coefficient prevent reflection.

Here, the thickness of the antireflection film 3 is preferably from 10 to 200 nm in order to reduce the reflected light, and from 30 to 70 nm from the viewpoint of reducing the reflected light and its wavelength dependence. Is preferred.

The first light-shielding film 4 and the second light-shielding film 6 contain chromium metal and have a total thickness of 20 to 500 nm.
From the viewpoint of light shielding performance and manufacturing throughput, 50
１５０150 nm is preferred. First light shielding film 4, second light shielding film 6
Each film thickness can be arbitrarily determined, but is preferably set to a half film thickness from the viewpoint of film stress relaxation.

The divisional film 5 has the purpose of dividing the light-shielding film to relieve film stress, and includes chromium oxide, chromium nitride, chromium carbide, chromium oxynitride, chromium oxycarbide, chromium oxynitride and chromium oxynitride carbide. At least one member of the group consisting of: The film thickness is not particularly limited, but is preferably 1 to 50 nm from the viewpoint of manufacturing throughput. In this black mask, a light-shielding film made of metallic chromium may be divided in the thickness direction by two or more divided films.

The films 3, 4, 5, and 6 may contain some impurities so as not to affect the optical characteristics. The transparent electrode 8 is made of ITO (Indium-Tin-Oxi).
de).

The black mask BM has a plurality of openings, and three adjacent openings are filled with resins of different colors as optical filters. That is, the colored resin R is a resin colored red, is a resin containing a red pigment in the photoresist and is cured, and the colored resin G is a resin colored green, and The resist is a resin that contains a green pigment and is cured, and the colored resin B is a resin that is colored blue and is a resin that contains a blue pigment and is cured.

In the color filter 1, since the black mask BM separates the colored resins R, G, and B disposed in the openings, the color filter 1 separates light transmitted through the colored resins R, G, and B.

Next, a method of manufacturing the color filter 1 according to the first embodiment will be described. In order to manufacture the present color filter 1, first, a glass substrate 2 transparent to visible light is prepared, and on the surface of the transparent substrate 2, an antireflection film 3, a first light shielding film 4, a division film 5, and A second light shielding film 6 is sequentially deposited.

The antireflection film 3 is formed using a reactive sputtering method. That is, after disposing the transparent substrate 2 in a chamber (not shown), a substrate containing chromium metal is disposed as a target at a position facing the transparent substrate 2. Next, after the pressure in the chamber is reduced to the first pressure P1 or less, argon gas as an inert gas (rare gas) and a reaction gas (oxygen gas, nitrogen gas,
At least one of carbon dioxide gas or a combination thereof) is introduced into the chamber at an appropriate ratio, and the pressure in the chamber is maintained at the second pressure P2. further,
While maintaining the temperature of the substrate 2 at the first temperature T1, the first sputtering power W1 is applied to the atmosphere in the chamber, an argon plasma is generated and irradiated on the target substrate, and chromium on the target substrate is sputtered. The antireflection film 3 is formed on the transparent substrate 2 by the reaction between the chromium atoms or molecules and the reaction gas introduced into the chamber.

Here, the first pressure P1 is 1.5 Pa or less, more preferably 0.1 Pa or less. Second
Is 0.1 Pa to 2 Pa, preferably 0.1 Pa to 1.0 Pa. Note that the first temperature T
1 is room temperature (about 20 ° C) to 500 ° C, more preferably room temperature (about 20 ° C) to 150 ° C. Also, a first sputtering power W1 to be supplied when the antireflection film 3 is formed.
Is 0.5 to ²⁰ W / cm ² , preferably 1 to
It is 12 W / cm ² . The sputtering speed and time at this time are not particularly limited, but the time for obtaining the target film thickness is, for example, 10 seconds to 1 hour, and more preferably 20 seconds to 20 minutes.

The first light-shielding film 4 is formed after the formation of the anti-reflection film 3.
Without removing the substrate 2 from the chamber, the anti-reflection film 3
Formed on top. In the formation of the first light-shielding film 4, the pressure in the chamber is reduced to a third pressure P3 or lower, and then an argon gas as an inert gas (rare gas) is introduced into the chamber to increase the pressure in the chamber to the fourth pressure. The pressure is maintained at P4. Further, while maintaining the temperature of the substrate 2 at the second temperature T2, the second sputtering power W2 is added to the atmosphere in the chamber,
An argon plasma is generated and irradiated on the target substrate, and chromium on the target substrate is sputtered to form a first light-shielding film 4 made of chromium metal on the antireflection film 3.

Here, the third pressure P3 is 1.5 Pa or less, more preferably 0.1 Pa or less. 4th
Is 0.1 Pa to 2 Pa, preferably 0.1 Pa to 1.0 Pa. Note that the second temperature T
2 is room temperature (about 20 ° C.) to 500 ° C., more preferably room temperature (about 20 ° C.) to 150 ° C. In addition, a second sputtering power W2 applied when forming the first light shielding film 4 is used.
Is 0.5 to ²⁰ W / cm ² , preferably 1 to
It is 12 W / cm ² . The sputtering speed and time at this time are not particularly limited, but the time for obtaining the target film thickness is, for example, 10 seconds to 1 hour, and more preferably 20 seconds to 20 minutes.

After the first light-shielding film 4 is formed, the division film 5 is formed on the first light-shielding film 4 without removing the substrate 2 from the chamber. After the pressure in the chamber is reduced to the fifth pressure P5 or less, at least one of an inert gas (rare gas), an argon gas, and a reaction gas (oxygen gas, nitrogen gas, carbon dioxide gas, or the like) for combining with chromium. Or a combination thereof) is introduced into the chamber at an appropriate ratio, and the pressure in the chamber is maintained at the sixth pressure P6. Further, while maintaining the temperature of the substrate 2 at the third temperature T3, the third sputtering power W3 is added to the atmosphere in the chamber,
An argon plasma is generated to irradiate the target substrate, chromium on the target substrate is sputtered, and a reaction between the sputtered chromium atoms or molecules and the reaction gas introduced into the chamber causes a division film on the first light-shielding film 4. 5 is formed.

Here, the fifth pressure P5 is 1.5 Pa or less, more preferably 0.1 Pa or less. Sixth
Is 0.1 Pa to 2 Pa, preferably 0.1 Pa to 1.0 Pa. Note that the third temperature T
3 is room temperature (about 20 ° C) to 500 ° C, more preferably room temperature (about 20 ° C) to 150 ° C. Further, the third sputtering power W3 applied at the time of forming the divided film is set to 0.1.
5 to 20 W / cm ² , preferably 1 to 12 W / cm ²
cm ² . There is no particular limitation on the sputtering speed and time at this time.
0 second or more and 1 hour or less are exemplified, and 20 seconds or more and 20 minutes or less are more preferable.

The second light-shielding film 6 is formed on the divisional film 5 without forming the substrate 2 from the chamber after the divisional film 5 is formed. The manufacturing method is the same as the manufacturing method of the first light shielding film 4.

When a black mask is formed by an in-line type sputtering apparatus, a plurality of metal targets are usually provided in one chamber from the viewpoint of shortening the manufacturing cycle. Therefore, by forming a light-shielding film by replacing a part of the metal target in the chamber for forming the light-shielding film with a target such as a metal oxide or a metal nitride, the light-shielding film divided by the metal compound film is formed. Can be.

The anti-reflection film 3, the first light-shielding film 4,
As a method for manufacturing the division film 5 and the second light shielding film 6, a CVD method or an evaporation method may be used.

Next, a positive photoresist is applied on the exposed surface of the second light-shielding film 6, and after pre-baking, a pattern having a plurality of openings is irradiated to the photoresist to expose the photoresist. After that, the photosensitive region of the photoresist is developed by dissolving using an organic solvent, and a photoresist layer having a plurality of openings is formed on the second light-shielding film 6 by performing baking.
Using a photoresist layer having a plurality of openings as a mask,
A predetermined etchant is brought into contact with the regions of the second light-shielding film 6, the division film 5, the first light-shielding film 4, and the anti-reflection film 3 just below the openings to etch these regions. To the second light-shielding film 6 using an organic solvent.
Black mask BM having a plurality of openings removed from above
To form In addition, as this etchant, an etchant containing ceric ammonium nitrate as a main component or the like can be used. Alternatively, a black mask BM having a plurality of openings can be formed by using a means such as a lift-off method.

Next, a negative-type photoresist colored red by containing a red pigment is supplied from a dispenser disposed above the substrate 2 onto the black mask BM, and all of the black mask BM is removed. Fill the opening.

Thereafter, the substrate 2 coated with the red photoresist is pre-baked to form a photoresist layer having a uniform thickness. Prior to the pre-bake, the substrate 2 was moved so that the thickness of the red photoresist layer became uniform.
It may be rotated with its thickness direction as a rotation axis.

Next, a red photoresist is applied only on the opening regions adjacent to each other in the row direction and the column direction of the openings arranged in a matrix of the black mask BM and in the diagonal direction. After exposing the red photoresist layer so as to remain, and removing the red photoresist in the non-photosensitive area using an organic solvent, baking is performed to form a red resin R in a predetermined opening of the black mask BM. .

Further, instead of the red photoresist, a green-colored photoresist and a blue-colored photoresist are used, and a predetermined method for forming the black mask BM is performed by using the same method as that for forming the red resin R. A green resin G and a blue resin B are formed in the opening of the substrate. Each of the colored resins R, G, and B is disposed every three in the row direction and the column direction of the opening of the black mask BM, and is arranged so as to be adjacent to the diagonal direction.

Next, an overcoat layer 7 is deposited on the colored resins R, G, and B so that the surface becomes uniform, and a transparent electrode 8 is deposited on the overcoat layer 7, and finally a transparent electrode 8 is deposited. A polarizing plate 9 is attached to the back side of the substrate 2 to complete the color filter 1 shown in FIG.

(Second Embodiment) Next, a black mask BM according to a second embodiment will be described. FIG.
FIG. 9 is a cross-sectional view of a color filter 1 including a black mask BM according to a second embodiment. This black mask B
M is the first anti-reflection film 10, the second anti-reflection film 11, the first
The light-shielding film 4, the division film 5 and the second light-shielding film 6 are provided.

The first and second antireflection films 10 and 11 are selected from the group consisting of chromium oxide, chromium nitride, chromium carbide, chromium oxynitride, chromium oxycarbide, chromium oxynitride and chromium oxynitride carbide. Contains at least one. Here, the first and second antireflection films 10 and 11 have a thickness of 20 to 200 nm in order to reduce reflected light.
Is preferably, and more preferably 10 to 70 nm. The respective films 10 and 11 can be formed by using the same method as the method of forming the antireflection film 3 of the first embodiment. The refractive index and extinction coefficient of the first and second antireflection films 10 and 11 are adjusted so as to prevent reflection, and the compositions in these films are different from each other. The black mask may include three or more antireflection films having different compositions.

First light-shielding film 4, division film 5 and second light-shielding film 6
Is equivalent to the film according to the first embodiment. In this black mask, a light-shielding film made of metallic chromium may be divided by two or more layers. The above film 1
0, 11, 4, 5, and 6 may contain some impurities to such an extent that the optical characteristics are not affected.

Next, a liquid crystal display using the color filter 1 will be described.

FIG. 3 is a sectional view showing the liquid crystal display 100. The liquid crystal display 100 includes a color filter 1, a TFT (thin film transistor) substrate 20 attached to the transparent electrode 8 of the color filter 1,
A backlight fixed at a position sandwiching the TFT substrate 20 together with the color filter 1.

The TFT substrate 20 has an outer frame 21 and an outer frame 2 made of a light-shielding resin surrounding the outer peripheral portion of the surface of the color filter 1.
Liquid crystal layer 2 composed of nematic liquid crystal filled in 1
2. a plurality of pixel electrodes 23 provided for each region corresponding to the black mask BM opening of the liquid crystal layer 22;
Includes a transparent glass substrate 24 formed thereon and a polarizing plate 25 formed on an exposed surface of the transparent glass substrate 24.

The polarizing directions of the polarizing plates or polarizing films 9 and 25 are orthogonal to each other and are made of an organic material such as polyimide. The plurality of pixel electrodes 23 are respectively connected to a plurality of thin film transistors formed on the glass substrate 24 of the TFT substrate 20, and when a specific potential is applied to the specific pixel electrode 23, the specific pixel electrode 23 and the transparent electrode 8, a predetermined voltage is applied, and the orientation of a region of the liquid crystal layer 22 corresponding to a specific pixel electrode 23 changes by an electric field formed according to the voltage.

The polarization component in a specific direction of the white light LT1 emitted from the backlight enters the liquid crystal layer 22 by passing through the polarizing plate or the polarizing film 25. The incident polarized light is divided for each pixel electrode 23, and the polarization direction changes according to the amount of orientation of the liquid crystal layer 22. The light split for each pixel electrode 23 is the color resin R, G,
B, respectively, and passes therethrough. Since the polarizing plate or the polarizing film 9 is provided on the emission surface side of the color filter 1, the amount of light transmitted through the polarizing plate or the polarizing film 9 changes according to the amount of alignment of the liquid crystal layer 22. Since the amount of orientation of the liquid crystal layer 22 is proportional to the potential applied to the pixel electrode 23,
By controlling the potential applied to the pixel electrode 23, the amount of emitted light LT2 can be controlled.

As described above, the color filter 1 according to the above-described embodiment includes the black mask BM.
And a transparent substrate 2 on which a black mask BM is formed, and colored resins R, G, and B disposed in a plurality of openings of the black mask BM. In the color filter 1, the black mask BM separates the colored resins R, G, and B arranged in the openings, and thus separates the light transmitted through the colored resins R, G, and B. Since the reflectance of the light irradiated on the black mask BM via the transparent substrate 2 and the wavelength dependence of the reflectance are small, the light LT2 transmitted through the colored resins R, G, and B
, And the visibility of light transmitted through the colored resins R, G, and B can be improved.

The liquid crystal display 100 according to the above-described embodiment has a structure in which the color filter 1, the liquid crystal layer 22 provided at a position facing the color filter 1, and the liquid crystal layer 22 are applied by applying a predetermined potential. A plurality of electrodes 2 provided at positions where the orientation of the liquid crystal layer can be changed for each region facing the plurality of openings of the black mask BM
3 is provided. In the liquid crystal display 100, by applying a predetermined potential to the electrode 23, the alignment can be changed in each region of the liquid crystal layer 22 facing the plurality of openings of the black mask BM. The amount of the input light LT1 is changed to the black mask BM.
Can be controlled for each opening. Black mask BM
Since the colored resins R, G, and B are disposed in the opening of the above, light of a wavelength component corresponding to the colored resins R, G, and B can be emitted for each of the regions. The color filter 1 of the liquid crystal display 100 can improve the visibility of light transmitted through the colored resins R, G, and B, so that a clear image can be displayed on the liquid crystal display 100.

The black mask according to the present invention is not limited to the above embodiment, but can be variously modified.

[0049]

EXAMPLES The black mask BM according to the first and second embodiments was evaluated for its patterning property and reflectance.

Example 1 The black mask BM according to the first embodiment was manufactured by the following method. First, the glass substrate 2 was mounted in a chamber of a sputtering apparatus, and the inside of the chamber was evacuated to 1.0 × 10 ⁻⁴ Pa.
A mixed gas of argon gas, nitrogen gas and carbon dioxide gas was introduced into the chamber until the pressure in the chamber reached 0.4 Pa. The flow rate ratio of the mixed gas supplied to this chamber is Ar: N ₂ : CO ₂ = 8: 4: 1. Further, the sputtering power is set to 2 W / cm ² , and sputtering is performed using chromium metal as a target to remove chromium oxide, chromium nitride, chromium carbide, chromium oxynitride, chromium oxycarbide, chromium oxynitride and chromium oxynitride carbide. An antireflection film 3 having a thickness of 40 nm was formed on the substrate 2.

Next, when the pressure in the chamber is 1.0 × 10 ⁻⁴ P
After evacuating to a, argon gas was introduced until the pressure in the chamber reached 0.4 Pa. Furthermore, sputtering was performed with a sputtering power of 5 W / cm ² using chromium metal as a target to form a first light-shielding film 4 made of chromium metal and having a thickness of 100 nm on the antireflection film 3.

Next, when the pressure in the chamber is 1.0 × 10 ⁻⁴ P
After evacuation until a, argon gas in the chamber,
A mixed gas of nitrogen gas and carbon dioxide gas was introduced until the pressure in the chamber reached 0.4 Pa. The flow rate ratio of the mixed gas supplied to this chamber is Ar: N ₂ :
CO ₂ = 4: 2: 1. Further, the sputtering power is set to 2 W / cm ² , and sputtering is performed using chromium metal as a target to remove chromium oxide, chromium nitride, chromium carbide, chromium oxynitride, chromium oxycarbide, chromium oxynitride and chromium oxynitride carbide. Including film thickness 5
A divided film 5 of nm was formed on the first light shielding film 4.

Next, when the pressure in the chamber is 1.0 × 10 ^−4.
After evacuating the atmosphere in the chamber until the pressure became Pa, argon gas was introduced into the chamber until the pressure in the chamber became 0.4 Pa. After that, the sputter power is reduced to 5
W / cm ² , sputtering was performed using metal chromium as a target, and a film thickness of metal
m second light-shielding film 6 was formed on the divided film 5. The temperature of the substrate 2 at the time of forming the films 3, 4, 5, and 6 is all room temperature.

Example 2 A black mask BM according to the second embodiment was manufactured by the following method. First, the glass substrate 2 was mounted in a chamber of a sputtering apparatus, and the inside of the chamber was evacuated to 1.0 × 10 ⁻⁴ Pa.
A mixed gas of nitrogen gas and oxygen gas was introduced into the chamber until the pressure in the chamber reached 0.4 Pa. The flow rate ratio of the mixed gas supplied to this chamber is N ₂ :
O ₂ = 1: 1. Further, the sputtering power is set to 10 W
/ Cm ² , and sputtering was performed using metal chromium as a target to form a first antireflection film 10 having a thickness of 54 nm containing chromium oxide, chromium nitride, and chromium oxynitride on the substrate 2.

Next, when the pressure in the chamber is 1.0 × 10 ^−4.
After the atmosphere in the chamber was evacuated to Pa, a mixed gas of argon gas, nitrogen gas, and oxygen gas was introduced until the pressure in the chamber reached 0.4 Pa. The flow rate ratio of the mixed gas supplied to this chamber is: Ar:
N ₂ : O ₂ = 10: 5: 1. Thereafter, the sputtering power is set to 7 W / cm ² , and sputtering is performed using chromium metal as a target to form a first antireflection film 11 having a thickness of 41 nm containing chromium oxide, chromium nitride, and chromium oxynitride on the first. It was formed on the antireflection film 10.

Next, when the pressure in the chamber is 1.0 × 10 ⁻⁴ P
After evacuating to a, argon gas was introduced until the pressure in the chamber reached 0.4 Pa. Further, the sputtering power was set to 5 W / cm ² , and sputtering was performed using chromium metal as a target to form a first light-shielding film 4 made of chromium metal and having a thickness of 100 nm on the second antireflection film 11.

Next, when the pressure in the chamber is 1.0 × 10 ⁻⁴ P
After evacuation until a, argon gas in the chamber,
A mixed gas of nitrogen gas and oxygen gas was introduced until the pressure in the chamber reached 0.4 Pa. The flow rate ratio of the mixed gas supplied to this chamber is Ar: N ₂ : O ₂ =
2: 1: 1. Further, the sputtering power is set to 2 W / c.
At m ² , sputtering was performed using metal chromium as a target, and a 5-nm-thick divided film 5 containing chromium oxide, chromium nitride, and chromium oxynitride was formed on the first light-shielding film 4.

Next, when the pressure in the chamber is 1.0 × 10 ^−4.
After evacuating the atmosphere in the chamber until the pressure became Pa, argon gas was introduced into the chamber until the pressure in the chamber became 0.4 Pa. After that, the sputter power is reduced to 5
W / cm ² , sputtering was performed using metal chromium as a target, and a film thickness of metal
m second light-shielding film 6 was formed on the divided film 5. The temperature of the substrate 2 at the time of forming the films 10, 11, 4, 5, and 6 is as follows:
All at room temperature.

(Comparative Example) A black mask B according to a comparative example
M was produced by the following method. First, the glass substrate 2
Is mounted in a chamber of a sputtering apparatus, and the inside of the chamber is evacuated to 1.0 × 10 ⁻⁴ Pa. Then, a mixed gas of argon gas, nitrogen gas and carbon dioxide gas is introduced into the chamber at a pressure of 0. It was introduced until the pressure became 4 Pa. The flow rate ratio of the mixed gas supplied to this chamber is Ar: N ₂ : CO ₂ = 8: 4: 1. Further, the sputtering power is set to 2 W / cm ² , and sputtering is performed using chromium metal as a target, and chromium oxide, chromium nitride, chromium carbide, chromium oxynitride,
A 40 nm-thick antireflection film 3 containing chromium oxycarbide, chromium oxynitride and chromium oxynitride carbide was formed on the substrate 2.

Next, when the pressure in the chamber is 1.0 × 10 ⁻⁴ P
After evacuating to a, argon gas was introduced until the pressure in the chamber reached 0.4 Pa. Further, the sputtering power was set to 5 W / cm ² , and sputtering was performed using chromium metal as a target to form a 200-nm-thick light-shielding film 4 made of chromium metal on the antireflection film 3.
The temperature of the substrate 2 at the time of forming the films 3 and 4 is all room temperature.

(Evaluation Method and Results) Examples 1 and 2
Example 1 and Example 2 when a black mask pattern is formed using the black mask BM according to the comparative example.
No film peeling or the like occurs on the black mask BM, and a fine and good edge shape can be obtained. However, in the black mask BM of the comparative example, film peeling may occur due to film stress, and a fine edge shape cannot be obtained.

Further, the transparent substrate 2 on which the black masks BM according to Example 1, Example 2, and Comparative Example were formed was prepared, and incident light was irradiated from the transparent substrate 2 side to reduce the light from the black mask BM. The reflectance was measured. This reflectance was measured using a Minolta CM-2002 spectrophotometer.

FIG. 4 is a graph showing the relationship between the wavelength (nm) of the incident light and the reflectance (%) thus measured. When the black mask BM according to the first embodiment is formed on the transparent substrate 2, the reflectance (E1) is 500 to
It is 6% or less in the region of 600 nm. Furthermore, when the black mask BM according to the second embodiment is formed on the transparent substrate 2, the reflectance (E2) is 400 to 700 wavelengths.
In the region of nm, it is 6% or less, and the wavelength dependency is reduced as compared with the first embodiment. The reflectance of the comparative example is the same as the reflectance (E1) of the first embodiment, and the introduction of the divided film does not affect the reflectance.

The black mask B according to the above embodiment was used.
For M, after applying a red resist thereon, exposing and developing to form red pixels, producing blue and green pixels, and further forming an ITO electrode thereon, , Liquid crystal manufactured by performing a series of operations such as preparation of an alignment film, rubbing, dispersion of spacers, adhesion of a counter electrode substrate having a rubbed alignment film on its surface, injection of liquid crystal, sealing, and adhesion of a polarizing film. The display has lower reflection and better display performance such as contrast than a conventional liquid crystal display.

[0065]

According to the present invention, it is possible to provide a black mask which does not cause film peeling due to film stress, a color filter capable of obtaining a clear image, and a liquid crystal display.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a color filter.

FIG. 2 is a cross-sectional view of a color filter according to another embodiment.

FIG. 3 is a cross-sectional view of a liquid crystal display.

FIG. 4 is a graph showing the relationship between the wavelength (nm) of incident light and the reflectance (%).

FIG. 5 is a cross-sectional view of a color filter according to a comparative example.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 3 ... Anti-reflection film, 4 ... First light-shielding film, 5 ... Division film, 6 ... Second light-shielding film, 10 ... First anti-reflection film, 11 ... Second anti-reflection film, BM ... Black mask, 1 ... Color filter , 1
00 ... Liquid crystal display.

Claims (7)

[Claims] In a black mask, an antireflection film formed on a transparent substrate and made of at least one layer of a metal compound; and a metal compound film formed on the antireflection film and formed of at least one layer of a metal compound And a light-shielding film divided in the thickness direction. 2. The black mask according to claim 1, wherein the light-shielding film is formed by dividing a metal chromium film with at least one chromium compound film in a thickness direction. 3. The chromium compound film that divides the light shielding film is selected from the group consisting of chromium oxide, chromium nitride, chromium carbide, chromium oxynitride, chromium oxycarbide, chromium oxynitride and chromium oxynitride carbide. The black mask according to claim 1, wherein the black mask includes at least one of the following. 4. The antireflection film includes at least one selected from the group consisting of chromium oxide, chromium nitride, chromium carbide, chromium oxynitride, chromium oxycarbide, chromium oxynitride, and chromium oxynitride carbide. The black mask according to any one of claims 1 to 3, wherein: 5. The black mask according to claim 1, the transparent substrate having the black mask formed thereon, and coloring disposed in a plurality of openings of the black mask. A color filter, comprising: a resin; 6. A first substrate provided with the color filter according to claim 5, a second substrate provided with a plurality of electrodes, sandwiched between the first and second substrates, and applying a predetermined potential to the electrodes. And a liquid crystal layer whose orientation can be changed for each region facing the plurality of openings of the black mask. 7. A composition comprising, on a transparent substrate, at least one selected from the group consisting of chromium oxide, chromium nitride, chromium carbide, chromium oxynitride, chromium oxycarbide, chromium oxynitride and chromium oxynitride carbide. Forming one or more anti-reflection films different from each other; forming a first light-shielding film containing metallic chromium on the anti-reflection film; and chromium oxide, chromium nitride, and chromium on the first light-shielding film. Forming a divided film containing at least one selected from the group consisting of carbide, chromium oxynitride, chromium oxycarbide, chromium nitrided carbide, and chromium oxynitride carbide; and a second light-shielding film containing metal chromium on the divided film. Forming a black mask.