JPH11269656A - Production of thin film forming composition and thin film using the composition - Google Patents

Production of thin film forming composition and thin film using the composition

Info

Publication number
JPH11269656A
JPH11269656A JP11410598A JP11410598A JPH11269656A JP H11269656 A JPH11269656 A JP H11269656A JP 11410598 A JP11410598 A JP 11410598A JP 11410598 A JP11410598 A JP 11410598A JP H11269656 A JPH11269656 A JP H11269656A
Authority
JP
Japan
Prior art keywords
metal
thin film
solution
group
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11410598A
Other languages
Japanese (ja)
Inventor
Minoru Tanaka
実 田中
Junko Nagao
純子 長尾
Hidechika Yokoyama
英親 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kojundo Kagaku Kenkyusho KK
Original Assignee
Kojundo Kagaku Kenkyusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kojundo Kagaku Kenkyusho KK filed Critical Kojundo Kagaku Kenkyusho KK
Priority to JP11410598A priority Critical patent/JPH11269656A/en
Publication of JPH11269656A publication Critical patent/JPH11269656A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To obtain a high purity compsn. by adding a metal salt, metal chelate or metal alkoxide to a soln. prepared by diluting an alkyl amine with an org. solvent such as a hydrocarbon. SOLUTION: A soln. prepared by diluting an alkylamine with an org. solvent such as an aromatic hydrocarbon or other hydrocarbons is brought into contact with an aq. soln. of salts of metals in groups III to V, group VIII, group VIa, group VIIa, group Ib or group IIb, the pH of which is previously controlled, so as to extract the metal salts in the org. solvent phase while the water phase is separated and removed to obtain a soln. containing a metal alkylamine complex. Or, further the org. solvent used for extraction is removed by vaporization and distillation, and an org. solvent for substitution such as hydrocarbons, alcohols, esters, β-diketoesters, ethers, β-diketones, glycols or mixtures of these is added to the obtd. soln. By using the thin film forming compsn. thus prepared, a metal or metal oxide thin film is formed on a substrate by a coating and pyrolyzing method or a CVD method.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電子材料用高純度
金属、金属酸化物薄膜に適用するためのアルキルアミン
を配位させた金属塩の薄膜形成用組成物の製造法とそれ
を用いた薄膜に関する。
The present invention relates to a method for producing a composition for forming a thin film of a metal salt to which an alkylamine is coordinated for application to a high-purity metal or a metal oxide thin film for an electronic material, and using the same. Related to thin films.

【0002】[0002]

【従来の技術】一般に電子材料として使用する酸化物薄
膜材料は高純度が要求される。電子材料用に使用されて
いる殆どの金属類にはアルカリ金属や各金属特有の不純
物が混入しており、このために純度の高い高価な原料を
選んだり、手間のかかる蒸留精製や酸、アルカリなどを
用いた複雑な金属分離精製技術を駆使して純度を上げて
いる。
2. Description of the Related Art Generally, oxide thin film materials used as electronic materials are required to have high purity. Almost all metals used for electronic materials contain alkali metals and impurities specific to each metal. For this reason, expensive and high-purity raw materials must be selected, and time-consuming distillation purification, acid, alkali, etc. Purity is raised by making full use of complex metal separation and purification technology using such methods.

【0003】塗布熱分解法で金属酸化物の薄膜を得るた
めにはカルボン酸金属塩、金属アセチルアセトナート、
金属アルコキシドなどの有機溶媒に可溶な化合物を合成
するか、市販品を各種溶媒に溶解して使用していた。
[0003] In order to obtain a thin film of a metal oxide by a coating thermal decomposition method, a metal carboxylate, a metal acetylacetonate,
Compounds soluble in organic solvents such as metal alkoxides have been synthesized or commercial products have been dissolved in various solvents before use.

【0004】金属類と反応するカルボン酸やβ−ジケト
ン、アルコール等はどのような金属とも化合物を作るの
ではなく、その中でも遷移金属や白金族などの化合物は
作りにくく、そのためにこれらの化合物の有機溶媒に溶
解する薄膜形成用組成物は見あたらず、塗布熱分解法で
これら遷移金属や白金族の薄膜を得ている例は極めて少
ない。
[0004] Carboxylic acids, β-diketones, alcohols, etc., which react with metals, do not form compounds with any metals. Among them, compounds such as transition metals and platinum group metals are difficult to form. No thin film forming composition soluble in an organic solvent has been found, and there are very few examples of obtaining these transition metal and platinum group thin films by a coating pyrolysis method.

【0005】[0005]

【発明が解決しようとする課題】本発明は、上記の種々
の欠点を克服したものであって、新規で高純度な薄膜形
成用組成物の製造法とそれを用いた薄膜を提供すること
を目的とする。
SUMMARY OF THE INVENTION The present invention has been made to overcome the above-mentioned various drawbacks, and has as its object to provide a novel method for producing a high-purity thin film forming composition and a thin film using the same. Aim.

【0006】[0006]

【課題を解決するための手段】本発明は、アルキルアミ
ンを芳香族炭化水素、その他の炭化水素のような有機溶
媒で希釈した溶液とあらかじめpH調整したIII〜V
族、VIII族、VIa族、VIIa族、Ib族、II
b族等の金属塩水溶液とを接触させることによって金属
塩を有機溶媒層に抽出し、水層を分離除去して金属アル
キルアミン錯体を含む有機溶媒溶液を得ること、あるい
は、さらに抽出時に使用した有機溶媒を蒸発留去し、そ
の溶液に炭化水素類、アルコール類、エステル類、β−
ジケトエステル類、エーテル類、β−ジケトン類、グリ
コール類等の置換用有機溶媒またはそれらの混合物を添
加することを特徴とする薄膜形成用組成物の製造法であ
る。
SUMMARY OF THE INVENTION The present invention is directed to a method of preparing a solution prepared by diluting an alkylamine with an organic solvent such as an aromatic hydrocarbon or another hydrocarbon and adjusting the pH of the solution to a pH value of III-V.
Group, VIII, VIa, VIIa, Ib, II
The metal salt is extracted into an organic solvent layer by contacting with an aqueous solution of a metal salt of group b or the like, and the aqueous layer is separated and removed to obtain an organic solvent solution containing a metal alkylamine complex, or further used during extraction. The organic solvent is distilled off and the solution contains hydrocarbons, alcohols, esters, β-
This is a process for producing a composition for forming a thin film, comprising adding an organic solvent for substitution, such as diketoesters, ethers, β-diketones, and glycols, or a mixture thereof.

【0007】また、本発明は、アルキルアミンを芳香族
炭化水素、その他の炭化水素のような有機溶媒で希釈し
た溶液に金属塩、金属キレートあるいは金属アルコキシ
ドを添加することを特徴とする薄膜形成用組成物の製造
法である。
Further, the present invention provides a method for forming a thin film, comprising adding a metal salt, a metal chelate or a metal alkoxide to a solution obtained by diluting an alkylamine with an organic solvent such as an aromatic hydrocarbon or another hydrocarbon. A method for producing a composition.

【0008】また、本発明は、上記の薄膜形成用組成物
を用いて金属または金属酸化物を塗布熱分解法あるいは
CVD法で基板上に形成した薄膜である。
Further, the present invention is a thin film formed by applying a metal or a metal oxide using the composition for forming a thin film on a substrate by a coating thermal decomposition method or a CVD method.

【0009】[0009]

【発明の実施の態様】特許請求の範囲に記載したアルキ
ルアミンとは、モノ−nオクチルアミン、モノ−2エチ
ルヘキシルアミン等のモノアルキルアミン、ジ−nオク
チルアミン、ジ−2エチルヘキシルアミン等のジアルキ
ルアミン、トリ−nオクチルアミン、トリ−2エチルヘ
キシルアミン等のトリアルキルアミン等である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The alkylamine described in the claims means a monoalkylamine such as mono-n-octylamine and mono-2ethylhexylamine, and a dialkyl such as di-n-octylamine and di-2ethylhexylamine. Amines, tri-n-octylamine, and trialkylamines such as tri-2ethylhexylamine.

【0010】また、芳香族炭化水素、その他の炭化水素
のような有機溶媒とは、ベンゼン、トルエン、キシレ
ン、ヘプタン、ヘキサン、オクタン、シクロヘキサン、
ミネラルターペン、ケロシン等の炭化水素である。
Organic solvents such as aromatic hydrocarbons and other hydrocarbons include benzene, toluene, xylene, heptane, hexane, octane, cyclohexane,
Hydrocarbons such as mineral terpenes and kerosene.

【0011】これらのアルキルアミンと上記の有機溶媒
を適宜組み合わせることによって抽出効率の良い抽出溶
液を準備することができる。金属によって適当に溶媒を
選定しないと抽出金属の種類によっては水層、抽出層、
溶媒層の三成分に分離して必要とする抽出層を取り出す
のに困難をきたす。
By appropriately combining these alkylamines and the above-mentioned organic solvents, it is possible to prepare an extraction solution having high extraction efficiency. If the solvent is not properly selected depending on the metal, the aqueous layer, extraction layer,
It is difficult to separate the solvent layer into the three components and extract the required extraction layer.

【0012】また、特許請求の範囲に記載した金属塩と
は硫酸塩、硝酸塩、ハロゲン化物、カルボン酸塩、スル
ファミン酸塩等であり、金属キレートとは金属アセチル
アセトナート、金属ピバロイルメタナート、金属フタロ
シアニン等であり、その中の金属とはY,Ti,Zr,
V,Nb,Ta,Mn,Re,Fe,Co,Ni.R
u,Os,Rh,Ir,Pd,Pt,Zn,Cd,A
l,Ga,In,Ag,Bi,Sn,Sb,Ce,P
r,Nd,Pm,Sm,Eu等であるが、アルキルアミ
ンと錯体を作るものであればどんな金属でもかまわな
い。
The metal salts described in the claims are sulfates, nitrates, halides, carboxylates, sulfamates and the like, and the metal chelates are metal acetylacetonate, metal pivaloyl methanate. , Metal phthalocyanine, etc., and the metals therein are Y, Ti, Zr,
V, Nb, Ta, Mn, Re, Fe, Co, Ni. R
u, Os, Rh, Ir, Pd, Pt, Zn, Cd, A
1, Ga, In, Ag, Bi, Sn, Sb, Ce, P
r, Nd, Pm, Sm, Eu, etc., but any metal that forms a complex with the alkylamine may be used.

【0013】また、置換用有機溶媒とは、ベンゼン、ト
ルエン、キシレン、ヘプタン、ヘキサン、シクロヘキサ
ン、オクタン、ミネラルターペン、ケロシン等の炭化水
素類、メタノール、エタノール、イソプロピルアルコー
ル、n−プロピルアルコール、イソブタノーノレ、n−
ブタノール、ヘキサノール、n−オクタノール、イソオ
クタノール、ベンジルアルコール等のアルコール類、酢
酸エチル、酢酸ブチル、酢酸イソアミル等のエステル
類、アセト酢酸メチル、アセト酢酸エチル等のケトエス
テル類、エチレングリコールモノメチルエーテル、エチ
レングリコールモノエチルエーテル、エチレングリコー
ルモノブチルエーテル等のグリコールエーテル類、エチ
レングリコール、プロピレングリコール、グリセリン等
のグリコール類、アセチルアセトン等である。
The substitution organic solvent includes hydrocarbons such as benzene, toluene, xylene, heptane, hexane, cyclohexane, octane, mineral terpene and kerosene, methanol, ethanol, isopropyl alcohol, n-propyl alcohol, isobutanol, n-
Alcohols such as butanol, hexanol, n-octanol, isooctanol and benzyl alcohol; esters such as ethyl acetate, butyl acetate and isoamyl acetate; keto esters such as methyl acetoacetate and ethyl acetoacetate; ethylene glycol monomethyl ether; ethylene glycol Glycol ethers such as monoethyl ether and ethylene glycol monobutyl ether; glycols such as ethylene glycol, propylene glycol and glycerin; and acetylacetone.

【0014】次に、請求項1の製造法について説明す
る。有機溶媒で希釈したアルキルアミン溶液と水溶性金
属塩をよく混合し、金属塩をアルキルアミン溶媒層に抽
出するために塩酸、硫酸、硝酸のような鉱酸を使用し抽
出する金属に合わせて水層中のpHを調節する。水層と
有機溶媒層をよく加熱しながら混合撹拌する。水層と有
機溶媒層の分離を明確にするために30〜60℃に加温
することが好ましい。
Next, the manufacturing method of claim 1 will be described. Mix the alkylamine solution diluted with the organic solvent with the water-soluble metal salt, and use a mineral acid such as hydrochloric acid, sulfuric acid, or nitric acid to extract the metal salt into the alkylamine solvent layer. Adjust the pH in the layer. The aqueous layer and the organic solvent layer are mixed and stirred while being well heated. It is preferable to heat to 30 to 60 ° C. in order to clarify the separation between the aqueous layer and the organic solvent layer.

【0015】溶媒層に抽出した金属塩類は分離槽を用い
て水層と溶媒層に分離する。この時アルカリ金属はアル
キルアミンに抽出されないため水層に留まるが、若干は
溶媒層に溶解している。このアルカリ金属を除くために
水洗工程を加えることが望ましく、水洗は溶媒に等量の
水を加えて2〜3回水洗を繰り返し行うことで効率よく
減少することができる。
The metal salts extracted in the solvent layer are separated into an aqueous layer and a solvent layer using a separation tank. At this time, the alkali metal remains in the aqueous layer because it is not extracted by the alkylamine, but is slightly dissolved in the solvent layer. It is desirable to add a water washing step in order to remove the alkali metal, and the water washing can be efficiently reduced by repeating the water washing two to three times by adding an equal amount of water to the solvent.

【0016】溶媒層で抽出した金属アルキルアミン錯体
は抽出した溶媒溶液でそのまま薄膜形成用溶液として使
用してもかまわないが、金属の種類によっては薄膜形成
時に塗膜のはじき、白濁、ひび割れがあったりすること
がある。このような場合は溶媒を選定する必要がある。
抽出時に使用した有機溶媒を蒸発留去してその金属類に
適合した有機溶媒に置換する。
The metal alkylamine complex extracted in the solvent layer may be used as a thin film forming solution as it is in the extracted solvent solution. However, depending on the type of the metal, the coating film may be repelled, clouded, or cracked during the formation of the thin film. Sometimes. In such a case, it is necessary to select a solvent.
The organic solvent used at the time of extraction is distilled off by evaporation and replaced with an organic solvent suitable for the metal.

【0017】次に、請求項2の製造法について説明す
る。有機溶媒に可溶な金属塩、金属キレート、金属アル
コキシド等は有機溶媒に溶解して直接アルキルアミンに
加え、薄膜形成用溶液として使用できる。有機溶媒に可
溶な化合物は、2−エチルヘキシル酸金属塩類、金属ア
セチルアセトナート錯体、金属フタロシアニン錯体、金
属アルコキシド等である。有機溶媒に可溶な金属化合物
をアルキルアミンに直接加えてできると予想されるカル
ボン酸イオン、アセチルアセトン、フタロシアニン、ハ
ロゲン、水酸基等がアルキルアミンとともに溶液中で金
属イオンに配位している複多核錯体であってもかまわな
い。
Next, the manufacturing method of claim 2 will be described. Metal salts, metal chelates, metal alkoxides, and the like, which are soluble in an organic solvent, can be dissolved in an organic solvent and added directly to an alkylamine to be used as a thin film forming solution. Compounds soluble in organic solvents include metal salts of 2-ethylhexylic acid, metal acetylacetonate complexes, metal phthalocyanine complexes, metal alkoxides, and the like. A polynuclear complex in which a carboxylate ion, acetylacetone, phthalocyanine, halogen, hydroxyl group, etc., expected to be formed by directly adding a metal compound soluble in an organic solvent to an alkylamine, is coordinated with the metal ion in solution together with the alkylamine. It may be.

【0018】このようにして製造された薄膜形成用組成
物をガラスあるいはシリコン基板上に1500〜200
0回転でスピンコートした塗膜は120℃で数分間乾燥
するかまたは直接550〜650℃の電気炉で10〜2
0分間焼成することによって高純度の金属酸化物の薄膜
を得ることができる。また水素気流中で焼成することに
よって高純度の金属薄膜を得ることができる。以下、実
施例を挙げて本発明をより詳細に述べるが、本発明は以
下の実施例に限定されるものではない。
The composition for forming a thin film produced in this manner is applied on a glass or silicon substrate to a thickness of 1500 to 200.
The coating film spin-coated at 0 revolution is dried at 120 ° C. for several minutes or directly in an electric furnace at 550-650 ° C. for 10-2.
By baking for 0 minutes, a high-purity metal oxide thin film can be obtained. By firing in a hydrogen stream, a high-purity metal thin film can be obtained. Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to the following Examples.

【0019】[0019]

【実施例1】塩化コバルト3.8gを50gの水に溶解
させ、その中に35%塩酸24.6gを加えた。トリオ
クチルアミン15.8gをキシレン40gに混合した溶
液を先の溶液に加え、撹拌しながら60℃に加熱した。
水層と溶媒層を分離し、溶媒層だけを取り出しで溶媒の
キシレンを留去して薄膜形成用組成物を得た。この青色
のトリオクチルアミンコバルト錯体は分析の結果、Na
は0.1ppm以下であった。また原料中に1200p
pmあったニッケルは水層中に残り、トリオクチルアミ
ンコバルト錯体の溶液中には入ってこなかった。この溶
液をシリコン基板上にスピンコート法により500rp
mで5秒、2000rpmで30秒でコートし、650
℃の電気炉で20分間焼成した。シリコン基板上に高純
度の酸化コバルトの透明な薄膜を得た。さらに水素ガス
雰囲気中550℃で2時間焼成し、高純度金属コバルト
の薄膜を得た。
Example 1 3.8 g of cobalt chloride was dissolved in 50 g of water, and 24.6 g of 35% hydrochloric acid was added thereto. A solution in which 15.8 g of trioctylamine was mixed with 40 g of xylene was added to the above solution, and the mixture was heated to 60 ° C. with stirring.
The aqueous layer and the solvent layer were separated, only the solvent layer was taken out, and the solvent xylene was distilled off to obtain a thin film forming composition. As a result of the analysis, this blue trioctylamine cobalt complex
Was 0.1 ppm or less. In addition, 1200p
The pm nickel remained in the aqueous layer and did not enter the solution of the trioctylamine cobalt complex. This solution is applied onto a silicon substrate by spin coating at 500 rpm.
m for 5 seconds, 2000 rpm for 30 seconds, 650
It baked for 20 minutes in the electric furnace of ° C. A transparent thin film of high-purity cobalt oxide was obtained on a silicon substrate. Further, firing was performed at 550 ° C. for 2 hours in a hydrogen gas atmosphere to obtain a high-purity metal cobalt thin film.

【0020】[0020]

【実施例2】塩化銅4gを50gの水に溶解させ、その
中に35%塩酸24.6gを加えた。トリオクチルアミ
ン15.8gをケロシン20gとキシレン20gの混合
溶液に加えた溶液を先の溶液に加え、撹拌しながら60
%に加熱した。水層と溶媒層を分離し、溶媒層だけを取
り出して溶媒のケロシンとキシレンを留去しトリオクチ
ルアミン銅錯体の薄膜形成用組成物を得た。この黄色の
トリオクチルアミン銅錯体溶液中のNaは分析の結果、
0.1ppm以下であった。この溶液をシリコン基板上
にスピンコート法で500rpmで5秒、2000rp
mで30秒間コートし、650℃の電気炉で20分間焼
成した。シリコン基板上に酸化銅の薄膜を得た。
Example 2 4 g of copper chloride was dissolved in 50 g of water, and 24.6 g of 35% hydrochloric acid was added thereto. A solution obtained by adding 15.8 g of trioctylamine to a mixed solution of 20 g of kerosene and 20 g of xylene is added to the above solution, and the solution is stirred for 60 hours.
%. The aqueous layer and the solvent layer were separated, only the solvent layer was taken out, and the solvent kerosene and xylene were distilled off to obtain a trioctylamine copper complex thin film-forming composition. As a result of analysis, Na in the yellow trioctylamine copper complex solution was analyzed,
It was 0.1 ppm or less. This solution is spin-coated on a silicon substrate at 500 rpm for 5 seconds and 2,000 rpm.
m for 30 seconds and baked in an electric furnace at 650 ° C. for 20 minutes. A thin film of copper oxide was obtained on a silicon substrate.

【0021】[0021]

【実施例3】塩化イリジウム酸7.7gを100gの水
に溶解し、その中にトリオクチルアミン10.6gとキ
シレン150gを加え、撹拌しながら60℃に加温し、
水層と溶媒層を分離した。溶媒層を取り出してキシレン
を留去し、褐色のトリオクチルアミンイリジウム錯体の
薄膜形成用組成物を得た。ICP発光分析法によるこの
溶液の分析結果は、純度99.999%であった。この
溶液をシリコン基板上にスピンコート法で500rpm
で5秒、2000rpmで30秒間コートし、550℃
の電気炉で20分間焼成した。シリコン基板上に金色の
光沢のある酸化イリジウムの薄膜を得た。この薄膜の抵
抗率は2.7×10−4Ω・cmであり電極材料として
使用できることを示唆している。
Example 3 7.7 g of iridic acid chloride was dissolved in 100 g of water, and 10.6 g of trioctylamine and 150 g of xylene were added thereto, and the mixture was heated to 60 ° C. with stirring.
The aqueous and solvent layers were separated. The solvent layer was taken out and xylene was distilled off to obtain a brown trioctylamine iridium complex thin film-forming composition. The result of analysis of this solution by ICP emission analysis was 99.999% purity. This solution is spin-coated on a silicon substrate at 500 rpm.
For 5 seconds and 2000 rpm for 30 seconds, 550 ° C
For 20 minutes in an electric furnace. A golden shiny iridium oxide thin film was obtained on a silicon substrate. The resistivity of this thin film is 2.7 × 10 −4 Ω · cm, suggesting that it can be used as an electrode material.

【0022】[0022]

【実施例4】塩化白金酸5.1gを100gの水に溶解
し、その中にトリオクチルアミン7gとキシレン100
gの混合溶液を加え、撹拌しながら60℃に加温し、水
層と溶媒層を分離し、溶媒層を取り出してキシレンを留
去し、褐色のトリオクチルアミン白金錯体の薄膜形成用
組成物を得た。この溶液をシリコン基板上にスピンコー
ト法で500rpmで5秒、2000rpmで30秒間
コートし、550℃の電気炉で20分間焼成して金属光
沢のある酸化白金薄膜を得た。
Example 4 5.1 g of chloroplatinic acid was dissolved in 100 g of water, and 7 g of trioctylamine and 100 g of xylene were dissolved therein.
g of the mixed solution, and the mixture was heated to 60 ° C. with stirring, the aqueous layer and the solvent layer were separated, the solvent layer was taken out, xylene was distilled off, and a brown trioctylamine platinum complex thin film-forming composition was formed. I got This solution was coated on a silicon substrate by spin coating at 500 rpm for 5 seconds and 2000 rpm for 30 seconds, and baked in an electric furnace at 550 ° C. for 20 minutes to obtain a platinum oxide thin film having a metallic luster.

【0023】[0023]

【実施例5】塩化ルテニウム1.5gを200gの水に
溶解し、塩酸60gを加えた。その溶液の中にキシレン
200gとモノ−2エチルヘキシルアミン22.2gの
混合溶液を加え、撹拌しながら60℃に加温し、水層と
溶媒層を分離した。溶媒層を取り出してキシレンを留去
して褐色のモノ−2エチルヘキシルアミンルテニウム錯
体の薄膜形成用組成物を得た。この溶液をシリコン基板
上にスピンコート法で500rpmで5秒、2000r
pmで30秒間コートし、650℃で20分間焼成して
金色の光沢のある酸化ルテニウムの薄膜を得た。
Example 5 1.5 g of ruthenium chloride was dissolved in 200 g of water, and 60 g of hydrochloric acid was added. A mixed solution of 200 g of xylene and 22.2 g of mono-2-ethylhexylamine was added to the solution, and the mixture was heated to 60 ° C. with stirring to separate an aqueous layer and a solvent layer. The solvent layer was taken out and xylene was distilled off to obtain a brown mono-2ethylhexylamine ruthenium complex thin film-forming composition. This solution is spin-coated on a silicon substrate at 500 rpm for 5 seconds and 2000 rpm.
pm for 30 seconds and baked at 650 ° C for 20 minutes to obtain a golden shiny ruthenium oxide thin film.

【0024】[0024]

【実施例6】実施例5のモノ−2エチルヘキシルアミン
をジ−2エチルヘキシルアミン27.6gに置き換えた
以外は実施例5と同様な操作を行い、褐色のジ−2エチ
ルヘキシルアミンルテニウム錯体の薄膜形成用組成物を
得た。この溶液をシリコン基板上に実施例5と同様な操
作でスピンコートと焼成を行い金色の光沢のある酸化ル
テニウムの薄膜を得た。
Example 6 A thin film of brown di-2ethylhexylamine ruthenium complex was formed in the same manner as in Example 5, except that mono-2ethylhexylamine in Example 5 was replaced with 27.6 g of di-2ethylhexylamine. A composition for use was obtained. This solution was spin-coated and fired on a silicon substrate in the same manner as in Example 5 to obtain a golden shiny ruthenium oxide thin film.

【0025】[0025]

【実施例7】塩化ルテニウム3gを200gの水に溶解
し、塩酸80gを加えた。その溶液にキシレン200g
とトリ−nオクチルアミン12.1gの混合溶液を加
え、撹拌しながら60℃に加温し、水層と溶媒層を分離
しながら200gの水で3回水洗を繰り返した。その後
溶媒層を取り出してキシレンを留去し、エタノール10
0gを加えて褐色のトリ−nオクチルアミンルテニウム
錯体の薄膜形成用組成物を得た。この溶液をシリコン基
板上にスピンコート法で500rpmで5秒、2000
rpmで30秒間コートし、650℃で20分間焼成し
て金色の光沢のある酸化ルテニウムの薄膜を得た。その
薄膜の抵抗率を測定したところ1.9×10−4Ω・c
mであった。この薄膜は電極用薄膜材料として使用でき
ることを示唆している。
Example 7 3 g of ruthenium chloride was dissolved in 200 g of water, and 80 g of hydrochloric acid was added. 200 g of xylene in the solution
And a mixed solution of 12.1 g of tri-n-octylamine were added, and the mixture was heated to 60 ° C. while stirring, and repeatedly washed with 200 g of water three times while separating an aqueous layer and a solvent layer. Thereafter, the solvent layer was taken out, and xylene was distilled off.
0 g was added to obtain a brown tri-n-octylamine ruthenium complex thin film-forming composition. This solution was spin-coated on a silicon substrate at 500 rpm for 5 seconds for 2000 seconds.
It was coated at rpm for 30 seconds and baked at 650 ° C. for 20 minutes to obtain a golden glossy ruthenium oxide thin film. The resistivity of the thin film was measured to be 1.9 × 10 −4 Ω · c.
m. This suggests that this thin film can be used as a thin film material for electrodes.

【0026】[0026]

【実施例8】実施例7のエタノールを2−エトキシエタ
ノール100gに置き換えた以外は実施例7と同様の操
作方法で実施した。薄膜の抵抗率は2.4×10−3Ω
・cmであった。
Example 8 The same operation as in Example 7 was carried out except that ethanol in Example 7 was replaced with 100 g of 2-ethoxyethanol. The resistivity of the thin film is 2.4 × 10 −3 Ω
Cm.

【0027】[0027]

【実施例9】実施例7のエタノールの代わりにイソオク
チルアルコール50gと2−エトキシエタノール50g
の混合溶液に代えた以外は実施例7と同様の操作方法で
実施した。薄膜の抵抗率は1.8×10−4Ωcmであ
った。
Example 9 Instead of ethanol in Example 7, 50 g of isooctyl alcohol and 50 g of 2-ethoxyethanol were used.
The procedure was performed in the same manner as in Example 7 except that the mixed solution was replaced with The resistivity of the thin film was 1.8 × 10 −4 Ωcm.

【0028】[0028]

【発明の効果】本発明によれば、有機溶媒に溶解する化
合物を作りにくい白金族化合物も本発明の方法で簡単に
溶液化することができる。また、不純物金属、特に電子
材料で嫌われるアルカリ金属などが取り除かれた高純度
の金属塩抽出溶液が容易に得られる。また、本発明にな
る薄膜形成用組成物を使用することによって高純度で良
好な物性値の薄膜を得ることができる。
According to the present invention, a platinum group compound which is difficult to produce a compound which is soluble in an organic solvent can be easily formed into a solution by the method of the present invention. Further, a high-purity metal salt extraction solution from which impurity metals, particularly alkali metals disliked by electronic materials, are removed can be easily obtained. Further, by using the composition for forming a thin film according to the present invention, a thin film having high purity and good physical properties can be obtained.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 アルキルアミンを芳香族炭化水素、その
他の炭化水素のような有機溶媒で希釈した溶液とあらか
じめpH調整したIII〜V族、VIII族、VIa
族、VIIa族、Ib族、IIb族等の金属塩水溶液と
を接触させることによって金属塩を有機溶媒層に抽出
し、水層を分離除去して金属アルキルアミン錯体を含む
有機溶媒溶液を得ること、あるいは、さらに抽出時に使
用した有機溶媒を蒸発留去し、その溶液に炭化水素類、
アルコール類、エステル類、β−ジケトエステル類、エ
ーテル類、β−ジケトン類、グリコール類等の置換用有
機溶媒またはそれらの混合物を添加することを特徴とす
る薄膜形成用組成物の製造法。
1. A solution obtained by diluting an alkylamine with an organic solvent such as an aromatic hydrocarbon or another hydrocarbon, and a pH-adjusted group of III-V, VIII, or VIa.
Contacting with an aqueous solution of a metal salt of Group III, Group VIIa, Group Ib, Group IIb, etc. to extract the metal salt into an organic solvent layer, and separating and removing the aqueous layer to obtain an organic solvent solution containing a metal alkylamine complex Or, furthermore, the organic solvent used at the time of extraction is distilled off by evaporation, and the solution contains hydrocarbons,
A method for producing a composition for forming a thin film, comprising adding a replacement organic solvent such as alcohols, esters, β-diketoesters, ethers, β-diketones, and glycols, or a mixture thereof.
【請求項2】 アルキルアミンを芳香族炭化水素、その
他の炭化水素のような有機溶媒で希釈した溶液に金属
塩、金属キレートあるいは金属アルコキシドを添加する
ことを特徴とする薄膜形成用組成物の製造法。
2. A composition for forming a thin film, comprising adding a metal salt, a metal chelate or a metal alkoxide to a solution obtained by diluting an alkylamine with an organic solvent such as an aromatic hydrocarbon or another hydrocarbon. Law.
【請求項3】 請求項1あるいは請求項2で記載した溶
液を用いて金属または金属酸化物を塗布熱分解法あるい
はCVD法で基板上に形成した薄膜。
3. A thin film formed by applying a metal or a metal oxide on a substrate by using the solution according to claim 1 or 2 by a coating thermal decomposition method or a CVD method.
JP11410598A 1998-03-20 1998-03-20 Production of thin film forming composition and thin film using the composition Pending JPH11269656A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11410598A JPH11269656A (en) 1998-03-20 1998-03-20 Production of thin film forming composition and thin film using the composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11410598A JPH11269656A (en) 1998-03-20 1998-03-20 Production of thin film forming composition and thin film using the composition

Publications (1)

Publication Number Publication Date
JPH11269656A true JPH11269656A (en) 1999-10-05

Family

ID=14629254

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH11269656A (en)

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