JPH1126754A5 - - Google Patents

Info

Publication number
JPH1126754A5
JPH1126754A5 JP1997173476A JP17347697A JPH1126754A5 JP H1126754 A5 JPH1126754 A5 JP H1126754A5 JP 1997173476 A JP1997173476 A JP 1997173476A JP 17347697 A JP17347697 A JP 17347697A JP H1126754 A5 JPH1126754 A5 JP H1126754A5
Authority
JP
Japan
Prior art keywords
gate insulating
semiconductor substrate
insulating film
forming
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997173476A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1126754A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP17347697A priority Critical patent/JPH1126754A/ja
Priority claimed from JP17347697A external-priority patent/JPH1126754A/ja
Publication of JPH1126754A publication Critical patent/JPH1126754A/ja
Publication of JPH1126754A5 publication Critical patent/JPH1126754A5/ja
Pending legal-status Critical Current

Links

JP17347697A 1997-06-30 1997-06-30 半導体装置の製造方法 Pending JPH1126754A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17347697A JPH1126754A (ja) 1997-06-30 1997-06-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17347697A JPH1126754A (ja) 1997-06-30 1997-06-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH1126754A JPH1126754A (ja) 1999-01-29
JPH1126754A5 true JPH1126754A5 (enrdf_load_stackoverflow) 2005-04-28

Family

ID=15961205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17347697A Pending JPH1126754A (ja) 1997-06-30 1997-06-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH1126754A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740912B1 (en) 1999-06-24 2004-05-25 Agere Systems Inc. Semiconductor device free of LLD regions
US6492712B1 (en) * 1999-06-24 2002-12-10 Agere Systems Guardian Corp. High quality oxide for use in integrated circuits
KR100429556B1 (ko) * 2002-09-17 2004-05-03 주식회사 하이닉스반도체 채널 특성을 개선시킨 반도체소자의 제조 방법

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