JPH11233949A - Developer solution for photosensitive polyimide precursor and manufacture of pattern using the same - Google Patents

Developer solution for photosensitive polyimide precursor and manufacture of pattern using the same

Info

Publication number
JPH11233949A
JPH11233949A JP3303398A JP3303398A JPH11233949A JP H11233949 A JPH11233949 A JP H11233949A JP 3303398 A JP3303398 A JP 3303398A JP 3303398 A JP3303398 A JP 3303398A JP H11233949 A JPH11233949 A JP H11233949A
Authority
JP
Japan
Prior art keywords
polyimide precursor
photosensitive polyimide
developer
pattern
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3303398A
Other languages
Japanese (ja)
Inventor
Hiroshi Komatsu
博 小松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP3303398A priority Critical patent/JPH11233949A/en
Publication of JPH11233949A publication Critical patent/JPH11233949A/en
Pending legal-status Critical Current

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Paints Or Removers (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a developer solution for photosensitive polyimide precursor which can shorten the developing time. SOLUTION: A developing solution for photosensitive polyimide precursor is composed of (a) a basic compound and, (b) at least one kind of organic solvent selected from among a group composed of amides, ketones, esters, lactones, halogenated hydrocarbons, and hydrocarbons and contains the compound (a) and solvent (b) are proportioned that the ratios become 0.1-20 pts.wt. and 99.9-80 pts.wt., respectively, and the total quantity becomes 100 pts.wt.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、感光性ポリイミド
前駆体用現像液及びこれを用いたパターン製造法に関す
る。
The present invention relates to a developer for a photosensitive polyimide precursor and a method for producing a pattern using the same.

【0002】[0002]

【従来の技術】近年、半導体工業にあっては、従来より
無機材料を用いて行われていた層間絶縁材料として、ポ
リイミド樹脂等のような耐熱性に優れた有機物が、その
特性を活かして使用されてきている。
2. Description of the Related Art In recent years, in the semiconductor industry, an organic material having excellent heat resistance, such as a polyimide resin, has been used as an interlayer insulating material, which has conventionally been formed using an inorganic material, taking advantage of its characteristics. Have been.

【0003】しかし、半導体集積回路やプリント基板上
の回路パターン形成は、基材表面へのレジスト材の造
膜、所定箇所への露光、エッチング等により不要箇所の
除去、基板表面の洗浄作業等の煩雑で多岐にわたる工程
を経て行われることから、露光、現像によるパターン形
成後も必要な部分のレジストを絶縁材料としてそのまま
残して用いることができる耐熱感光材料の開発が望まれ
ている。
However, formation of a circuit pattern on a semiconductor integrated circuit or a printed circuit board involves forming a resist material on the base material surface, removing unnecessary portions by exposing and etching predetermined portions, cleaning the substrate surface, and the like. Since it is performed through complicated and various steps, development of a heat-resistant photosensitive material that can use a necessary portion of a resist as an insulating material as it is even after pattern formation by exposure and development is desired.

【0004】これらの材料として、例えば、感光性ポリ
イミド、環化ポリブタジエン等をベースポリマーとした
耐熱感光材料が提案されており、特に感光性ポリイミド
は、その耐熱性が優れていることや不純物の排除が容易
であること等の点から特に注目されている。
[0004] As these materials, for example, heat-resistant light-sensitive materials based on photosensitive polyimide, cyclized polybutadiene and the like have been proposed. In particular, photosensitive polyimide has excellent heat resistance and eliminates impurities. Has attracted particular attention because of its ease of use.

【0005】[0005]

【発明が解決しようとする課題】しかし従来の感光性ポ
リイミドはベースポリマー自体が有機溶媒に対して溶解
性が乏しく、従来の感光性ポリイミド前駆体用現像液を
用いた場合では、良好なパターン形成を得るためには現
像に要する所要時間が膨大になる傾向があった。
However, in the conventional photosensitive polyimide, the base polymer itself has poor solubility in an organic solvent, and when a conventional developing solution for a photosensitive polyimide precursor is used, a good pattern formation can be achieved. The time required for development tended to be enormous in order to obtain.

【0006】本発明は、多層配線板用の層間絶縁膜や半
導体メモリー素子用のα線遮蔽膜、バッファコート膜な
どのポリイミドパターン加工を短時間で行える感光性ポ
リイミド前駆体用現像液及びパターン製造法を提供する
ことを目的とするものであり、さらには、この目的に加
え、残存膜の平坦性を有し、かつ現像残留物が発生しな
い感光性ポリイミド前駆体用現像液及びパターン製造法
を提供することを目的とするものである。
The present invention is directed to a photosensitive polyimide precursor developing solution and pattern manufacturing method capable of processing polyimide patterns such as an interlayer insulating film for a multilayer wiring board, an α-ray shielding film for a semiconductor memory device, and a buffer coat film in a short time. Further, in addition to this object, a developer and a pattern manufacturing method for a photosensitive polyimide precursor having a flatness of a remaining film and generating no development residue. It is intended to provide.

【0007】[0007]

【課題を解決するための手段】本発明者らは上記の課題
を解決するため、鋭意検討を行った結果、本発明に到達
した。本発明は、(a)塩基性化合物および(b)アミ
ド類、ケトン類、エステル類、ラクトン類、エーテル
類、ハロゲン化炭化水素類および炭化水素類からなる群
から選択される少なくとも1種の有機溶剤を含有してな
る感光性ポリイミド前駆体用現像液に関する。また本発
明は、(a)が1級、2級もしくは3級のアミノ化合物
である、前記の感光性ポリイミド前駆体用現像液に関す
る。また本発明は、(a)がアミノ基を一つ有する有機
化合物である、前記の感光性ポリイミド前駆体用現像液
に関する。また本発明は、(a)成分が0.1〜20重
量部、(b)成分が99.9〜80重量部であり、合計
が100重量部である前記の感光性ポリイミド前駆体用
現像液に関する。また本発明は、(a)が単独で30℃
以下の温度において液状の形態を有し、また沸点が大気
圧において50℃以上である、前記の感光性ポリイミド
前駆体用現像液に関する。さらに本発明は、感光性ポリ
イミド前駆体組成物の塗膜上にパターンを描いたマスク
上から活性光線を照射し、前記のいずれかに記載の現像
液を用いて現像し、未照射部を除去することを特徴とす
るパターン製造法に関する。
Means for Solving the Problems The present inventors have made intensive studies to solve the above-mentioned problems, and as a result, have reached the present invention. The present invention provides (a) a basic compound and (b) at least one organic compound selected from the group consisting of amides, ketones, esters, lactones, ethers, halogenated hydrocarbons and hydrocarbons. The present invention relates to a photosensitive polyimide precursor developer containing a solvent. The present invention also relates to the above-mentioned developer for a photosensitive polyimide precursor, wherein (a) is a primary, secondary or tertiary amino compound. The present invention also relates to the above-mentioned developer for a photosensitive polyimide precursor, wherein (a) is an organic compound having one amino group. The present invention also provides the photosensitive polyimide precursor developer, wherein the component (a) is 0.1 to 20 parts by weight, the component (b) is 99.9 to 80 parts by weight, and the total is 100 parts by weight. About. In the present invention, (a) is used alone at 30 ° C.
The present invention relates to the photosensitive polyimide precursor developer having a liquid form at the following temperature and having a boiling point of 50 ° C. or more at atmospheric pressure. Furthermore, the present invention irradiates an actinic ray from a mask on which a pattern is drawn on a coating film of the photosensitive polyimide precursor composition, and develops using the developer according to any of the above, and removes an unirradiated portion. And a method for producing a pattern.

【0008】[0008]

【発明の実施の形態】本発明の現像液においては、前述
の(a)塩基性化合物を含むことにより特に現像残留物
を減らすことができる。塩基性化合物としては、1級、
2級もしくは3級のアミノ化合物があり、かつそのアミ
ノ基を一つ有する有機化合物が好ましく、さらに(a)
は単独で30℃以下の温度において液状の形態を有し、
また沸点が大気圧において50℃以上であるものが効果
が高く好ましい。そのような例としてはプロピルアミ
ン、ブチルアミン、ペンチルアミン、ヘキシルアミン、
シクロヘキシルアミン、ジエチルアミン、ジブチルアミ
ン、メチルブチルアミン、エチルブチルアミン、ジイソ
プロピルアミン、ジシクロヘキシルアミン、ピロリジ
ン、ピペリジン、ピリジン、アニリン、トリメチルアミ
ン、トリエチルアミン、1−メチルピロリジン等があげ
られる。これらの中では3級アミンが効果が高く好まし
い。
BEST MODE FOR CARRYING OUT THE INVENTION In the developer of the present invention, the development residue can be particularly reduced by including the basic compound (a). As the basic compound, primary,
An organic compound having a secondary or tertiary amino compound and having one amino group is preferable.
Has a liquid form alone at a temperature of 30 ° C. or less,
Those having a boiling point of 50 ° C. or higher at atmospheric pressure are preferred because of their high effect. Such examples include propylamine, butylamine, pentylamine, hexylamine,
Examples include cyclohexylamine, diethylamine, dibutylamine, methylbutylamine, ethylbutylamine, diisopropylamine, dicyclohexylamine, pyrrolidine, piperidine, pyridine, aniline, trimethylamine, triethylamine, 1-methylpyrrolidine and the like. Of these, tertiary amines are preferred because of their high effects.

【0009】本発明において前記目的を達成するため
に、(b)は、アミド類、ケトン類、エステル類、ラク
トン類、エーテル類、ハロゲン化炭化水素類および炭化
水素類からなる群から選択される少なくとも1種の有機
溶剤からなる。例えば、アミド類としてN−メチル−2
−ピロリドン、N,N−ジメチルアセトアミド、N,N
−ジメチルホルムアミド、ジメチルスルホキシド、テト
ラメチル尿素、ヘキサメチルリン酸トリアミドなどがあ
り、ケトン類としてアセトン、ジエチルケトン、メチル
エチルケトン、メチルイソブチルケトン、シクロヘキサ
ノンなどがあり、エステル類として酢酸メチル、酢酸エ
チル、酢酸ブチル、シュウ酸ジエチル、マロン酸ジエチ
ルなどがあり、ラクトン類としてγ−ブチロラクトンな
どがあり、エーテル類としてジエチルエーテル、テトラ
ヒドロフランなどがあり、ハロゲン化炭化水素類として
ジクロロメタン、1,2−ジクロロエタン、1,4−ジ
クロロブタン、トリクロロエタン、クロロベンゼン、o
−ジクロロベンゼンなどがあり、炭化水素類としてヘキ
サン、ヘプタン、オクタン、ベンゼン、トルエン、キシ
レンなどが使用できる。これらの中では、アミド類が効
果が高く好ましく、特にN−メチル−2−ピロリドンが
好ましい。これらの有機溶媒は、単独で又は二種類以上
を組み合わせて使用される。(a)成分と(b)成分の
配合比としては、短時間現像等の点で、(a)0.1〜
20重量部、(b)99.9〜80重量部、合計が10
0重量部であることが好ましい。
In the present invention, to achieve the above object, (b) is selected from the group consisting of amides, ketones, esters, lactones, ethers, halogenated hydrocarbons and hydrocarbons. It comprises at least one organic solvent. For example, N-methyl-2 as amides
-Pyrrolidone, N, N-dimethylacetamide, N, N
-Dimethylformamide, dimethylsulfoxide, tetramethylurea, hexamethylphosphoric triamide, and the like; ketones such as acetone, diethyl ketone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; and esters as methyl acetate, ethyl acetate, and butyl acetate. , Diethyl oxalate, diethyl malonate and the like, lactones such as γ-butyrolactone, ethers such as diethyl ether and tetrahydrofuran, and halogenated hydrocarbons such as dichloromethane, 1,2-dichloroethane and 1,4. -Dichlorobutane, trichloroethane, chlorobenzene, o
Hexane, heptane, octane, benzene, toluene, xylene and the like can be used as hydrocarbons. Among these, amides are preferred because of their high effect, and N-methyl-2-pyrrolidone is particularly preferred. These organic solvents are used alone or in combination of two or more. The mixing ratio of the component (a) and the component (b) is preferably from 0.1 to 0.1% in view of short-time development.
20 parts by weight; (b) 99.9 to 80 parts by weight;
It is preferably 0 parts by weight.

【0010】本発明の感光性ポリイミド前駆体用現像液
を用いた現像は、感光性ポリイミド前駆体組成物の塗膜
上に、パターンを描いたマスク上から活性光線を照射し
た後、浸漬法、スプレー法、パドル法など単独又は二種
類以上を組み合わせて使用する方法に従って行われる。
現像終了した時点ではレリーフパターンが形成されてい
る。形成膜は必要に応じて水又は貧溶媒でリンスが行わ
れる。リンス液としては現像液と親和性が高く、ポリイ
ミド前駆体に対する貧溶媒などが用いられる。リンス液
としては水、メチルアルコール、エチルアルコール、イ
ソプロピルアルコール、トルエン、キシレン、アセト
ン、メチルエチルケトン、ジエチルケトンなどがあげら
れる。得られたパターンを加熱することにより、感光剤
と溶媒を完全に除去した安定な高耐熱性ポリイミドパタ
ーンが得られる。なお、本発明において、現像の対象と
なる感光性ポリイミド前駆体としては、炭素−炭素不飽
和二重結合をテトラカルボン酸残基の側鎖にエステル結
合、アミド結合等を介して導入したポリアミド酸エステ
ル、ポリアミド酸アミド、ポリアミド酸のカルボキシル
基に不飽和基を有するアミンをイオン結合を介して結合
させたイオン結合型ポリイミド前駆体などのネガ型が好
ましいものとしてあげられるが、本発明の現像液はイオ
ン結合型ポリイミド前駆体に好適である。その組成物
は、ポリイミド前駆体に光開始剤、増感剤、溶剤を配合
して作成される。
The development using the photosensitive polyimide precursor developer according to the present invention is performed by irradiating a coating film of the photosensitive polyimide precursor composition with actinic rays from a mask on which a pattern is drawn, followed by a dipping method, The method is performed according to a method using a single method or a combination of two or more methods such as a spray method and a paddle method.
When the development is completed, a relief pattern is formed. The formed film is rinsed with water or a poor solvent as necessary. As the rinsing liquid, a poor solvent for the polyimide precursor, which has a high affinity with the developing solution, is used. Examples of the rinsing liquid include water, methyl alcohol, ethyl alcohol, isopropyl alcohol, toluene, xylene, acetone, methyl ethyl ketone, and diethyl ketone. By heating the obtained pattern, a stable high heat-resistant polyimide pattern from which the photosensitive agent and the solvent have been completely removed can be obtained. In the present invention, as the photosensitive polyimide precursor to be developed, a polyamide acid having a carbon-carbon unsaturated double bond introduced into a side chain of a tetracarboxylic acid residue via an ester bond, an amide bond, or the like. Esters, polyamidoamides, and negative types such as ion-bonding polyimide precursors in which an amine having an unsaturated group is bonded to a carboxyl group of a polyamic acid via an ionic bond are preferred. Is suitable for an ion-bonding polyimide precursor. The composition is prepared by blending a photoinitiator, a sensitizer, and a solvent with a polyimide precursor.

【0011】[0011]

【実施例】以下、実施例等により本発明を詳細に説明す
る。
The present invention will be described in detail below with reference to examples.

【0012】感光性ポリイミド前駆体用現像液の調製例 攪拌機、温度計及び窒素導入管を備えた三口フラスコに
N−メチル−2−ピロリドン100g及び1−メチルピ
ロリジン5gを加えた。室温で1時間攪拌してN−メチ
ル−2−ピロリドン/1−メチルピロリジン(重量比9
5/5)混合溶液を得た。
Preparation Example of Developer for Photosensitive Polyimide Precursor 100 g of N-methyl-2-pyrrolidone and 5 g of 1-methylpyrrolidine were added to a three-necked flask equipped with a stirrer, a thermometer and a nitrogen inlet tube. The mixture was stirred at room temperature for 1 hour to give N-methyl-2-pyrrolidone / 1-methylpyrrolidine (weight ratio 9).
5/5) A mixed solution was obtained.

【0013】ポリアミド酸溶液の合成例 攪拌機、温度計及び窒素導入管を備えた三口フラスコに
4,4’−ジアミノジフェニルエーテル9.8116g
及びN−メチル−2−ピロリドン75.04gを加え、
室温で攪拌溶解した。ここに、オキシジフタル酸二無水
物15.2002gを添加して、8時間攪拌し、粘稠な
ポリアミド酸樹脂溶液を得た。
Synthesis Example of Polyamic Acid Solution 9.8116 g of 4,4′-diaminodiphenyl ether was placed in a three-necked flask equipped with a stirrer, thermometer and nitrogen inlet tube.
And 75.04 g of N-methyl-2-pyrrolidone were added,
The mixture was stirred and dissolved at room temperature. To this, 15.2002 g of oxydiphthalic dianhydride was added and stirred for 8 hours to obtain a viscous polyamic acid resin solution.

【0014】実施例 上記合成例で得られたポリアミド酸樹脂溶液10gを攪
拌混合し、さらに次式AZ、CM及びOXの感光剤をA
Z0.027g、CM0.027g及びOX0.054
g加えて攪拌溶解後、フィルターで濾過して感光性樹脂
組成物溶液を得た。この溶液をシリコンウエハ上に滴下
し、スピンコートした。次にホットプレートを用いて1
00℃、150秒加熱し20μmの塗膜を形成した後、
パターンマスクし、i線ステッパで露光した。これを、
さらに100℃、60秒間加熱し、前述のN−メチル−
2−ピロリドン/1−メチルピロリジン混合溶液を用い
て30秒間パドル現像し、エタノールでリンスしたとこ
ろ良好なレリーフパターン(20mmのスルーホール)
が得られた。
EXAMPLE 10 g of the polyamic acid resin solution obtained in the above synthesis example was stirred and mixed, and the sensitizers of the following formulas AZ, CM and OX were mixed with A
Z 0.027 g, CM 0.027 g and OX0.054
g was added and dissolved by stirring, followed by filtration with a filter to obtain a photosensitive resin composition solution. This solution was dropped on a silicon wafer and spin-coated. Next, using a hot plate,
After heating at 00 ° C. for 150 seconds to form a 20 μm coating film,
The pattern was masked and exposed with an i-line stepper. this,
Further, the mixture was heated at 100 ° C. for 60 seconds, and N-methyl-
Paddle development using a mixed solution of 2-pyrrolidone / 1-methylpyrrolidine for 30 seconds and rinsing with ethanol gave a good relief pattern (20 mm through hole)
was gotten.

【0015】[0015]

【化1】 Embedded image

【0016】比較例1 実施例において使用したN−メチル−2−ピロリドン/
1−メチルピロリジン(重量比95/5)混合溶液の代
わりにN−メチル−2−ピロリドンのみを用いて、それ
以外は、実施例と全く同様の配合で、全く同様に処理し
たところ、現像時間が短いため溶解不足が生じ、全くパ
ターンは形成されなかった。
Comparative Example 1 N-methyl-2-pyrrolidone used in Examples
When only N-methyl-2-pyrrolidone was used instead of the mixed solution of 1-methylpyrrolidine (weight ratio 95/5), and processing was carried out in exactly the same manner as in the examples except for the development time. Was too short to dissolve, and no pattern was formed.

【0017】[0017]

【発明の効果】本発明の感光性ポリイミド前駆体用現像
液を用いたパターン製造法によれば、多層配線板用の層
間絶縁膜や半導体メモリー素子用のα線遮蔽膜、バッフ
ァーコート膜などのポリイミドパターン加工を迅速に短
時間にて行うことができ、また残存膜の平坦性を有し、
かつ現像残留物が発生しない。
According to the pattern production method using the developing solution for a photosensitive polyimide precursor of the present invention, an interlayer insulating film for a multilayer wiring board, an α-ray shielding film for a semiconductor memory device, a buffer coat film, etc. Polyimide pattern processing can be performed quickly and in a short time, and has flatness of the remaining film,
In addition, no development residue is generated.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 (a)塩基性化合物および(b)アミド
類、ケトン類、エステル類、ラクトン類、エーテル類、
ハロゲン化炭化水素類および炭化水素類からなる群から
選択される少なくとも1種の有機溶剤を含有してなる感
光性ポリイミド前駆体用現像液。
1. A basic compound and (b) amides, ketones, esters, lactones, ethers,
A developer for a photosensitive polyimide precursor, comprising at least one organic solvent selected from the group consisting of halogenated hydrocarbons and hydrocarbons.
【請求項2】 (a)が1級、2級もしくは3級のアミ
ノ化合物である、請求項1記載の感光性ポリイミド前駆
体用現像液。
2. The developer for a photosensitive polyimide precursor according to claim 1, wherein (a) is a primary, secondary or tertiary amino compound.
【請求項3】 (a)がアミノ基を一つ有する有機化合
物である、請求項1又は2記載の感光性ポリイミド前駆
体用現像液。
3. The developing solution for a photosensitive polyimide precursor according to claim 1, wherein (a) is an organic compound having one amino group.
【請求項4】 (a)成分が0.1〜20重量部、
(b)成分が99.9〜80重量部であり、合計が10
0重量部である請求項1,2又は3記載の感光性ポリイ
ミド前駆体用現像液。
4. Component (a) is 0.1 to 20 parts by weight,
Component (b) is 99.9 to 80 parts by weight, and the total is 10
4. The developer for a photosensitive polyimide precursor according to claim 1, which is 0 parts by weight.
【請求項5】 (a)が単独で30℃以下の温度におい
て液状の形態を有し、また沸点が大気圧において50℃
以上である、請求項1,2,3又は4記載の感光性ポリ
イミド前駆体用現像液。
5. (a) alone has a liquid form at a temperature of 30 ° C. or less, and has a boiling point of 50 ° C. at atmospheric pressure.
5. The developer for a photosensitive polyimide precursor according to claim 1, 2, 3, or 4.
【請求項6】 感光性ポリイミド前駆体組成物の塗膜上
にパターンを描いたマスク上から活性光線を照射し、請
求項1〜5のいずれかに記載の現像液を用いて現像し、
未照射部を除去することを特徴とするパターン製造法。
6. Irradiating an actinic ray from a mask on which a pattern is drawn on a coating film of a photosensitive polyimide precursor composition, and developing using a developer according to any one of claims 1 to 5,
A pattern manufacturing method characterized by removing unirradiated portions.
JP3303398A 1998-02-16 1998-02-16 Developer solution for photosensitive polyimide precursor and manufacture of pattern using the same Pending JPH11233949A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3303398A JPH11233949A (en) 1998-02-16 1998-02-16 Developer solution for photosensitive polyimide precursor and manufacture of pattern using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3303398A JPH11233949A (en) 1998-02-16 1998-02-16 Developer solution for photosensitive polyimide precursor and manufacture of pattern using the same

Publications (1)

Publication Number Publication Date
JPH11233949A true JPH11233949A (en) 1999-08-27

Family

ID=12375491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3303398A Pending JPH11233949A (en) 1998-02-16 1998-02-16 Developer solution for photosensitive polyimide precursor and manufacture of pattern using the same

Country Status (1)

Country Link
JP (1) JPH11233949A (en)

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KR20230047461A (en) 2020-09-07 2023-04-07 후지필름 가부시키가이샤 A method for producing a cured product, a method for producing a laminate, and a method for manufacturing an electronic device
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