JPH11214754A - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device

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Publication number
JPH11214754A
JPH11214754A JP5409498A JP5409498A JPH11214754A JP H11214754 A JPH11214754 A JP H11214754A JP 5409498 A JP5409498 A JP 5409498A JP 5409498 A JP5409498 A JP 5409498A JP H11214754 A JPH11214754 A JP H11214754A
Authority
JP
Japan
Prior art keywords
semiconductor light
emitting device
light emitting
resin material
sealing resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5409498A
Other languages
Japanese (ja)
Inventor
Shinji Isokawa
Hidekazu Toda
秀和 戸田
慎二 磯川
Original Assignee
Rohm Co Ltd
ローム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd, ローム株式会社 filed Critical Rohm Co Ltd
Priority to JP5409498A priority Critical patent/JPH11214754A/en
Priority claimed from DE1999101918 external-priority patent/DE19901918A1/en
Publication of JPH11214754A publication Critical patent/JPH11214754A/en
Application status is Granted legal-status Critical

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • H01L2924/1816Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161Exposing the passive side of the semiconductor or solid-state body of a flip chip
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin

Abstract

PROBLEM TO BE SOLVED: To prevent a semiconductor light-emitting device from deteriorating in luminance by a method, wherein encapsulating resin which seals up the semiconductor light-emitting device is restrained from deteriorating. SOLUTION: A pair of metabolized wiring layers 2 and 3 are deposited on a rectangular insulating base 1 formed of electrically insulating material, partially covering its base, edge faces and surface, and an LED element 6 is die- bonded jointing its one side 6a, where a p-side electrode and an n-side electrode are formed to the wiring layers 2 and 3 with conductive materials 4 and 5 as bonding materials. All the LED device 6 is sealed up with non-transparent encapsulating resin material 8 loaded with filler such as alumina, carbon, silica or the like as reinforcing materials while keeping the light-emitting part 6b exposed.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、半導体発光素子を封止する封止樹脂材の劣化を防止した半導体発光装置に関する。 The present invention relates to relates to a semiconductor light emitting device capable of preventing deterioration of the sealing resin material for sealing the semiconductor light-emitting element.

【0002】 [0002]

【従来の技術】半導体発光素子を用いた表面実装形の半導体発光装置が各種の産業機器、民生機器等に使用されている。 BACKGROUND OF THE INVENTION Semiconductor light-emitting device of the surface mount using a semiconductor light emitting device and various industrial equipment, and is used in consumer equipment. このような半導体発光装置の従来例について、 A conventional example of such a semiconductor light emitting device,
図7により説明する。 It will be described with reference to FIG. 図7は、半導体発光素子として発光ダイオード素子(以下、LED素子と略称する)6を用いた半導体発光装置20の断面図である。 7, the light emitting diode element as the semiconductor light-emitting device (hereinafter, abbreviated as LED element) 6 is a cross-sectional view of a semiconductor light-emitting device 20 was used.

【0003】図7において、1は電気絶縁材料からなる矩形状絶縁基体で、矩形状絶縁基体1の底面から側面を介して表面に導出される一対のメタライズ配線層2、3 [0003] In FIG. 7, 1 is a rectangular insulating substrate made of an electrically insulating material, a pair of metallized wiring layers derived to the surface via the side surface from the bottom of the rectangular insulating base 1 2
を被着する。 The deposited. LED素子6は、その片面の6a側にp側及びn側電極を設けている。 LED element 6 is provided with a p-side and n-side electrode 6a side of the one side. 各メタライズ配線層2、3 Each metallized wiring layers 2 and 3
の表面には導電材4、5を接着し、LED素子6に設けたp側及びn側電極が一対のメタライズ配線層2、3と電気的に接続されるように、導電材4、5を接合材料としてダイボンデングする。 Of adhering the conductive material 4 and 5 to the surface, so that the p-side and n-side electrodes provided in the LED element 6 is connected to a pair of electrically metallized wiring layers 2 and 3, the conductive material 4,5 to Daibondengu as the bonding material.

【0004】ダイボンデングされたLED素子6は、透明合成樹脂または半透明合成樹脂製の封止樹脂材7によりパッケージされる。 [0004] Daibondengu been LED element 6 is packaged by a transparent synthetic resin or semi-transparent synthetic resin of the sealing resin material 7. このようにして形成された半導体発光装置20を回路基板に表面実装し、メタライズ配線層2、3を回路基板に形成されている配線導体に接続する。 Such a semiconductor light emitting device 20 formed in the surface-mounted on a circuit board, is connected to the wiring conductors formed a metallized wiring layers 2 and 3 on the circuit board.

【0005】 [0005]

【発明が解決しようとする課題】従来の半導体発光装置の封止樹脂材は、上記のように半導体発光素子の発光面も被覆している。 Sealing resin material of the invention Problems to be Solved conventional semiconductor light emitting device also covers the light emitting surface of the semiconductor light emitting device as described above. このため、発光面に光路が形成されるためには封止樹脂材は光透過性の透明合成樹脂または半透明合成樹脂製とする必要があった。 Therefore, the sealing resin material for optical path is formed on the light emitting surface had to be made of light transmitting transparent synthetic resin or semi-transparent synthetic resin. このような光透過性の封止樹脂材は、耐リフロー性が劣るためにパッケージにクラックが生じる場合があり、また、耐熱性や耐湿性も十分ではないので使用環境によっては封止樹脂材に劣化が発生する場合がある。 Such light-transmitting sealing resin material, there is a crack in the package to reflow resistance is poor results, also in the sealing resin material by heat resistance and moisture resistance also use environment because not enough there is a case in which the deterioration occurs.

【0006】すなわち、高熱や紫外線にさらされる環境で半導体発光装置が使用されると、前記光透過性の透明合成樹脂または半透明合成樹脂製の封止樹脂材が、高熱や紫外線の影響により黄変して光透過率が低下する。 Namely, when the semiconductor light-emitting device in an environment exposed to high heat or ultraviolet light is used, the light transmission of the transparent synthetic resin or semi-transparent synthetic resin of the sealing resin material, yellow due to the influence of high heat and ultraviolet strange to light transmittance decreases. この結果、半導体発光素子から発射される出力光のうち、 As a result, among the output light emitted from the semiconductor light emitting element,
相当程度の割合が封止樹脂材で損失となり外部に放射される出力光の割合が低下する。 Ratio of output light rate of about equivalent is emitted to the outside to a loss in the sealing resin material is lowered. このように、従来の半導体発光装置においては、光透過性の透明合成樹脂または半透明合成樹脂製の封止樹脂材の劣化により光度が低下するという問題があった。 Thus, in the conventional semiconductor light emitting device, the light intensity is lowered due to deterioration of light transmittance of the transparent synthetic resin or semi-transparent synthetic resin of the sealing resin material.

【0007】本発明はこのような問題に鑑み、半導体発光素子を封止する封止樹脂材の劣化を抑制して、光度低下を防止した半導体発光装置の提供を目的とする。 [0007] The present invention has been made in view of such problems, to suppress the deterioration of the sealing resin material for sealing the semiconductor light-emitting element, and an object thereof is to provide a semiconductor light-emitting device which prevents reduction in brightness.

【0008】 [0008]

【課題を解決するための手段】本発明の上記目的は請求項1に係る発明において、半導体発光装置を、絶縁基体又はリードフレーム上に、p側電極及びn側電極が形成された片面側でダイボンデングされる半導体発光素子を備え、該半導体発光素子の発光部を露出させて全周を強化材を混入した非透過性封止樹脂材にて封止する構成とすることによって達成される。 The above object of the present invention According to an aspect of in the invention according to claim 1, the semiconductor light-emitting device, an insulating substrate or on a lead frame, p-side electrode and the n-side electrode is formed on one surface side comprising a semiconductor light-emitting element to be Daibondengu is achieved by a structure for sealing by the semiconductor light emitting element impermeable sealing resin material mixed with reinforcing material all around to expose the light emitting portion of the.

【0009】また、請求項2に係る発明においては、請求項1に係る発明において前記絶縁基体又はリードフレームに半導体発光素子を収納する段部を形成した構成としている。 Further, in the invention according to claim 2, it has a configuration forming a stepped portion for accommodating a semiconductor light-emitting element to the insulating substrate or the lead frame in the invention according to claim 1.

【0010】また、請求項3に係る発明においては、請求項1に係る発明において前記発光部の形状を種々の形状に設定可能な構成としている。 Further, in the invention according to claim 3, in the shape of the light emitting portion and settable in various shapes in the present invention according to claim 1.

【0011】本発明の上記請求項1に係る発明の特徴によれば、半導体発光素子の発光部を露出させて全周を強化材を混入した非透過性封止樹脂材にて封止する構成としているので、耐リフロー性が向上してパッケージクラック等の損傷を防止することができる。 According to a feature of the [0011] invention according to the first aspect of the present invention, configured to seal in a non-transmissive sealing resin material mixed with reinforcing material all around to expose the light emitting portion of the semiconductor light emitting element since a, it is possible to prevent damage such as package cracking and improved reflow resistance. また、このような非透過性封止樹脂材は耐熱性が向上し紫外線を遮断するので、半導体発光装置が高熱や紫外線にさらされる環境で使用される場合であっても、封止樹脂材が黄変する劣化現象を抑制し、封止樹脂材の劣化に起因する光度の低下を防止することができる。 Moreover, since the non-transmissive sealing resin material blocking ultraviolet improved heat resistance, even when the semiconductor light-emitting device is used in an environment exposed to high heat and ultraviolet rays, the sealing resin material suppressing degradation phenomenon of yellowing, it is possible to prevent a decrease in light intensity due to the deterioration of the sealing resin material.

【0012】また請求項2に係る発明においては、前記絶縁基体又はリードフレームを一部削除して半導体発光素子を収納する段部を形成しているので、半導体発光装置を薄形に形成することができ、小型、軽量化が図れる。 [0012] In the invention according to claim 2, wherein since the partially deleted insulating substrate or the lead frame to form a stepped portion for accommodating a semiconductor light-emitting element, to form a semiconductor light-emitting device to thin can be, small size, light weight reduction can be achieved.

【0013】また請求項3に係る発明においては、前記発光部の形状を種々の形状に設定可能としているので、 [0013] In the invention according to claim 3, since the possible setting the shape of the light emitting portion into various shapes,
半導体発光装置から放射される出力光の形状を任意の形状に変えることができる。 It is possible to change the shape of the output laser beam emitted from the semiconductor light emitting device into an arbitrary shape.

【0014】 [0014]

【発明の実施の形態】以下、本発明の実施の形態について図1を参照して説明する。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, will be explained with reference to FIG. 1 for an embodiment of the present invention. 図1は半導体発光装置21 Figure 1 is a semiconductor light emitting device 21
の断面図である。 It is a cross-sectional view of. 図2と同一の部分または対応するところは同一の符号を付しており詳細な説明は省略する。 Figure 2 identical parts or corresponding place and will be omitted are detailed descriptions are denoted by the same reference numerals. 本発明の半導体発光装置21においては半導体発光素子として、例えばサファイア等の硬度の大きな光透過性絶縁素材の基板6b上にGaN等の窒素化合物を気相成長させて発光層を形成し、当該基板6b側を発光面とする構成のLED素子6を使用している。 As the semiconductor light-emitting element in the semiconductor light emitting device 21 of the present invention, a nitrogen compound such as GaN, to form a light emitting layer by vapor phase growth on a substrate, for example 6b large light transmitting insulating material hardness of sapphire, the substrate the 6b side are using the LED element 6 having the structure and the light emitting surface.

【0015】図1において、8は、強化材として例えばアルミナ、カーボン、シリカ等のフィラを混入した光の非透過性封止樹脂材である。 [0015] In FIG. 1, 8 is a non-transparent sealing resin material as a reinforcing material such as alumina, light mixed carbon, a filler such as silica. この非透過性封止樹脂材8 The non-transmissive sealing resin material 8
は、LED素子6の側面と、絶縁素材の基板6bとは反対側のp側及びn側電極が形成されている片面6aを被覆する。 It includes a side surface of the LED element 6, and the substrate 6b of the insulating material covering one surface 6a of p-side and n-side electrode on the opposite side. また図4の平面図に示すように、基板6bの発光面6cの中で発光部6dのみを露出させ、発光部6d Also as shown in the plan view of FIG. 4 to expose only the light emitting portion 6d in the emission face 6c of the substrate 6b, the light emitting portion 6d
を除いた発光面6cを非透過性封止樹脂材8で被覆する。 The emission face 6c except for the coating with a non-permeable sealing resin material 8. すなわち、LED素子の発光部6dを露出させて全周を非透過性封止樹脂材8にて封止する。 That is, to seal the entire circumference to expose the light emitting portion 6d of the LED element in a non-transmissive sealing resin material 8.

【0016】本発明の半導体発光装置21は、LED素子6の発光部6dのみを露出させ、LED素子6の全周を封止樹脂材で封止する構成としているので、封止樹脂材として光の非透過性封止樹脂材を使用することができる。 [0016] The semiconductor light emitting device 21 of the present invention exposes only the light emitting portion 6d of the LED element 6, since the entire periphery of the LED element 6 has a configuration for sealing with the sealing resin material, light as a sealing resin material it can be used impermeable sealing resin material. このため、例えばアルミナ、カーボン、シリカ等のフィラを強化材として混入した非透過性封止樹脂材8にてLED素子6を封止することが可能となる。 Thus, for example, alumina, carbon, a filler such as silica in a non-transmissive sealing resin material 8 that is mixed as a reinforcing material so that it is possible to seal the LED element 6.

【0017】このような非透過性封止樹脂材8は、吸湿量が少なく、耐熱性が向上するので耐リフロー性が向上してパッケージクラック等の損傷を防止することができる。 [0017] The non-transmissive sealing resin material 8 is less moisture absorption, it is possible to prevent damage such as package cracking and improved reflow resistance because heat resistance is improved. また、半導体発光装置21が高熱や紫外線にさらされる環境で使用される場合であっても、封止樹脂材が黄変する劣化現象を抑制し、封止樹脂材の劣化に起因する光度の低下を防止した半導体発光装置21が得られる。 Further, even when the semiconductor light emitting device 21 is used in an environment exposed to high heat or ultraviolet light, to suppress the deterioration of the sealing resin material is yellowing, reduction in light intensity due to the deterioration of the sealing resin material the semiconductor light emitting device 21 which prevents obtained.

【0018】図2は、本発明の他の実施の形態の半導体発光装置の断面図である。 [0018] FIG. 2 is a cross-sectional view of a semiconductor light emitting device according to another embodiment of the present invention. この例においては、LED素子6は、導電材4、5を接合材料としてリードフレーム9、10にダイボンデングされる。 In this example, LED elements 6 are Daibondengu the lead frame 9 and 10 the conductive material 4,5 as a bonding material. このような構成の半導体発光装置22においても、図1の例と同様にアルミナ、カーボン、シリカ等のフィラを強化材として混入した非透過性封止樹脂材8を使用することができる。 In the semiconductor light-emitting device 22 having such a configuration, it is possible to use a non-transparent sealing resin material 8 that is mixed alumina as in the example of FIG. 1, carbon, a filler such as silica as a reinforcing material.

【0019】図3は、本発明の更に他の実施の形態に係る半導体発光装置の断面図である。 [0019] FIG. 3 is a cross-sectional view of a semiconductor light emitting device according to another embodiment of the present invention. 図3の半導体発光装置23の例は、図2の構成においてリードフレーム9、 Examples of the semiconductor light-emitting device 23 of FIG. 3, the lead frame 9 in the configuration of FIG. 2,
10の表面を一部削除して段部11、12を形成する。 10 surface of the delete part forming the stepped portions 11 and 12.
この段部11、12の内部にLED素子6を収納し、L The LED element 6 is housed inside the stepped portion 11, 12, L
ED素子6は導電材4、5を接合材料としてリードフレーム9、10にダイボンデングされる。 ED element 6 is Daibondengu the lead frame 9 and 10 the conductive material 4,5 as a bonding material.

【0020】図3のようにリードフレーム9、10に段部11、12を形成し、この段部11、12の内部にL [0020] to form a lead frame 9 and 10 step portion 11, 12 as shown in FIG. 3, L inside the stepped portions 11 and 12
ED素子6を収納してダイボンデングすることにより、 By Daibondengu accommodating the ED element 6,
半導体発光装置23の高さ方向の寸法T2を、図2の構成の半導体発光装置22の高さ方向の寸法T1よりも小さくすることができる。 The height dimension T2 of the semiconductor light emitting device 23 can be made smaller than the height dimension T1 of the configuration of the semiconductor light emitting device 22 of FIG. このため、半導体発光装置23 Therefore, the semiconductor light-emitting device 23
を薄形に形成することができると共に、リードフレーム9、10を一部削除しているので小型、軽量化も図れる。 The it is possible to form a thin, small since the partially deleted lead frame 9 and 10, thereby also lighter.

【0021】図3の例で説明したようなLED素子6を収納する段部は、図1の構成の矩形状絶縁基体1上にL The stepped portion for accommodating the LED element 6 as described in the example of FIG. 3, L on a rectangular insulating base 1 of the configuration of FIG. 1
ED素子6をダイボンデングする場合にも形成することが可能である。 It is also possible to form in the case of Daibondengu the ED element 6. 矩形状絶縁基体1に図3と同様に段部を形成することにより、図1の構成の矩形状絶縁基体1を用いた半導体発光装置21の高さ方向の寸法を小さくして、小型、軽量化を図ることができる。 By forming a stepped portion in the same manner as FIG. 3 in a rectangular shape insulating base 1, to reduce the height dimension of the semiconductor light emitting device 21 using a rectangular insulating base 1 of the configuration of FIG. 1, small size, light weight it is possible to achieve the reduction.

【0022】ところで本発明においては、非透過性封止樹脂材8は金型を用いて成型されLED素子6を封止しているので、金型形状を変えることにより発光部6dの形状を種々の形状に設定することができる。 In the present invention the way, since the non-transmissive sealing resin material 8 seals the LED element 6 is molded by using a mold, various shapes of the light emitting portion 6d by changing the mold shape it can be set in the shape. このため、 For this reason,
半導体発光装置から放射される出力光の形状を矩形状以外の任意の形状に変えることができる。 It is possible to change the shape of the output laser beam emitted from the semiconductor light-emitting device into any shape other than a rectangular shape. 図5、図6は出力光の形状を変えた例の半導体発光装置の平面図であり、図5は円形の発光部6dを設けた例であり、図6は三角形の発光部6dを設けた例である。 5, FIG. 6 is a plan view of a semiconductor light-emitting device of Example of changing the shape of the output laser beam, FIG 5 is an example in which a circular light-emitting portion 6d, 6 provided with the light emitting portion 6d of the triangle it is an example.

【0023】上記の例では、半導体発光素子としてサファイア等の硬度の大きな光透過性絶縁素材の基板6b上にGaN等の窒素化合物を気相成長させて発光層を形成し、当該基板6b側を発光面とする構成のLED素子6 [0023] In the above example, a nitrogen compound such as GaN on a substrate 6b large light transmitting insulating material hardness of sapphire or the like by vapor phase growth to form a light emitting layer as the semiconductor light-emitting device, the substrate 6b side construction of the LED element to the light emitting surface 6
を使用している。 I am using. しかしながら、本発明の半導体発光装置に適用される半導体発光素子はこのような構成のLE However, the semiconductor light emitting element applied to a semiconductor light-emitting device of the present invention LE such a configuration
D素子には限定されない。 The D element is not limited. 片面にp側電極及びn側電極が形成された構成の半導体発光素子に一般的に適用される。 It is generally applied to a semiconductor light-emitting element in which the p-side electrode and the n-side electrode is formed on one surface.

【0024】 [0024]

【発明の効果】以上説明したように本発明の請求項1に係る発明においては、半導体発光素子の発光部を露出させて全周を強化材を混入した非透過性封止樹脂材にて封止する構成としているので、耐リフロー性が向上してパッケージクラック等の損傷を防止することができる。 In the invention according to claim 1 of the present invention as described in the foregoing, sealing in a non-transmissive sealing resin material mixed with reinforcing material all around to expose the light emitting portion of the semiconductor light emitting element since a configuration of stopping, it is possible to prevent damage such as package cracking and improved reflow resistance. また、このような非透過性封止樹脂材は耐熱性が向上し紫外線を遮断するので、半導体発光装置が高熱や紫外線にさらされる環境で使用される場合であっても、封止樹脂材が黄変する劣化現象を抑制し、封止樹脂材の劣化に起因する光度の低下を防止することができる。 Moreover, since the non-transmissive sealing resin material blocking ultraviolet improved heat resistance, even when the semiconductor light-emitting device is used in an environment exposed to high heat and ultraviolet rays, the sealing resin material suppressing degradation phenomenon of yellowing, it is possible to prevent a decrease in light intensity due to the deterioration of the sealing resin material.

【0025】また請求項2に係る発明においては、絶縁基体又はリードフレームを一部削除して半導体発光素子を収納する段部を形成しているので、半導体発光装置を薄形に形成することができ、小型、軽量化が図れる。 [0025] In the invention according to claim 2, since the forms the step portion for accommodating the semiconductor light emitting element to remove some of the insulating substrate or the lead frame, to form a semiconductor light-emitting device to thin can, small size, light weight reduction can be achieved.

【0026】また請求項3に係る発明においては、発光部の形状を種々の形状に設定可能としているので、半導体発光装置から放射される出力光の形状を任意の形状に変えることができる。 [0026] In the invention according to claim 3, since the possible setting the shape of the light emitting portion into various shapes, it is possible to change the shape of the output light emitted from the semiconductor light emitting device into an arbitrary shape.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の実施の形態に係る半導体発光装置の断面図である。 1 is a cross-sectional view of a semiconductor light-emitting device according to an embodiment of the present invention.

【図2】本発明の他の実施の形態に係る半導体発光装置の断面図である。 It is a cross-sectional view of a semiconductor light-emitting device according to another embodiment of the present invention; FIG.

【図3】本発明の更に他の実施の形態に係る半導体発光装置の断面図である。 It is a cross-sectional view of a semiconductor light emitting device according to another embodiment of the present invention; FIG.

【図4】図1の半導体発光装置の平面図である。 4 is a plan view of a semiconductor light emitting device of FIG.

【図5】本発明の他の実施の形態に係る半導体発光装置の平面図である。 5 is a plan view of a semiconductor light-emitting device according to another embodiment of the present invention.

【図6】本発明の更に他の実施の形態に係る半導体発光装置の平面図である。 It is a plan view of a semiconductor light emitting device according to another embodiment of the present invention; FIG.

【図7】従来例の半導体発光装置の断面図である。 7 is a cross-sectional view of a conventional semiconductor light-emitting device.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 絶縁基体 2、3 メタライズ配線層 4、5 導電材 6 LED素子 6b サファイア基板 7 封止樹脂材 8 非透過性封止樹脂材 1 insulating substrate 2 metallized wiring layers 4,5 conductive material 6 LED element 6b sapphire substrate 7 sealing resin material 8 impermeable sealing resin material

Claims (3)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 絶縁基体又はリードフレーム上に、p側電極及びn側電極が形成された片面側でダイボンデングされる半導体発光素子を備え、該半導体発光素子の発光部を露出させて全周を強化材を混入した非透過性封止樹脂材にて封止したことを特徴とする半導体発光装置。 To 1. A dielectric substrate or on a lead frame, comprising a semiconductor light-emitting element to be Daibondengu in p-side electrode and the n-side electrode is formed one side, the entire circumference is exposed to the light emitting portion of the semiconductor light emitting element the semiconductor light emitting device characterized by sealing in a non-transmissive sealing resin material mixed with reinforcing material.
  2. 【請求項2】 前記絶縁基体又はリードフレームに、半導体発光素子を収納する段部を形成したことを特徴とする請求項1に記載の半導体発光装置。 Wherein said insulating substrate or the lead frame, the semiconductor light-emitting device according to claim 1, characterized in that the formation of the stepped portion for accommodating a semiconductor light-emitting element.
  3. 【請求項3】前記発光部の形状を種々の形状に設定可能としたことを特徴とする請求項1に記載の半導体発光装置。 3. A semiconductor light emitting device according to claim 1, characterized in that a settable shape of the light emitting portion into various shapes.
JP5409498A 1998-01-28 1998-01-28 Semiconductor light-emitting device Granted JPH11214754A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5409498A JPH11214754A (en) 1998-01-28 1998-01-28 Semiconductor light-emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5409498A JPH11214754A (en) 1998-01-28 1998-01-28 Semiconductor light-emitting device
DE1999101918 DE19901918A1 (en) 1998-01-28 1999-01-19 Light emitting semiconductor device e.g. an LED component

Publications (1)

Publication Number Publication Date
JPH11214754A true JPH11214754A (en) 1999-08-06

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