JPH11205112A - High voltage resistant power integrated circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the start of a high side output from being disabled by providing an N channel MOS transistor, which drives its gate with the same phase as a second output switch element based on a second driving control signal while connecting its drain and its source in parallel, between the collector and emitter of the second output switch element. SOLUTION: The drain and source are connected in parallel between the collector and emitter of a low side output IGBT 20. Then, the gate is driven with the same phase as the low side output IGBT 20 based on second IGBT driving control signal LIN, and an N channel MOS transistor 21 having the same high voltage resistance as the low side output IGBT 20 and an MOS transistor driving circuit 22 for driving the gate of the N channel MOS transistor 21 corresponding to the second IGBT driving control signal LIN are provided. Thus, the component of a loss lowering the charging voltage of a capacitor for both trap at the time of starting a high voltage resistant power integrated circuit rather than a power supply voltage VCC of a control system can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high withstand voltage power integrated circuit which requires a high withstand voltage and high power switch output.
More particularly, the present invention relates to a starting circuit in a high-voltage power integrated circuit having an IGBT (insulated gate bipolar transistor) as two output switch elements for discharging current and sinking current, such as for home appliances, automobiles, and industrial use. Used for IGBTs.

[0002]

2. Description of the Related Art An intelligent high-voltage power integrated circuit in which two output switch elements for discharging current and sinking current and a group of semiconductor elements for controlling the same are monolithically integrated on the same semiconductor chip. As the output switch element, a power MOS transistor or an N-channel IGBT (insulated gate bipolar transistor) is used.

In the power MOS transistor, the drain current ID versus the drain-source voltage VDS is, for example, as shown in FIG. 5, the drain-source ON voltage VDS when the drain current is saturated is almost 0V.

On the other hand, the collector current I of the IGBT is
The C vs. collector-emitter voltage VCE characteristic is shown in FIG.
As shown in (1), the collector current IC does not saturate until the collector-emitter voltage VCE reaches the saturation voltage VCEsat.

FIG. 7 shows an example of an output drive circuit of a conventional high voltage power integrated circuit having an N-channel IGBT as an output switch element. The output drive circuit shown in FIG. 7 is a high power supply voltage VBB from a high power supply outside the integrated circuit.
(For example, 300 V to 500 V) between the high power supply terminal 12 to which the ground potential GND is applied and the ground terminal 13 to which the ground potential GND is applied. The high side output switch element 10 on the current discharging side and the low side output switch element 20 on the current sink side. Are connected by a totem pole, and a midpoint terminal 14 is connected to a connection point between the two.

That is, the high-side output switch element 10 is connected between the high power supply terminal 12 and the midpoint terminal 14, and the low-side output switch element 20 is connected between the midpoint terminal 14 and the ground terminal 13. ing.

A high-side drive circuit 15 and a low-side drive circuit 16 for driving the high-side output switch element 10 and the low-side output switch element 20 are provided.

The output switch elements 10 and 20 form a part of, for example, a three-phase motor drive circuit and supply a drive current to an external load (not shown) connected to the midpoint terminal 14. An N-channel IGBT is used.

That is, the high-side IGBT 10 has a collector connected to the high power supply terminal 12 and an emitter (current output terminal) connected to the midpoint terminal (external load connection terminal) 14. The low-side IGBT 20 has a collector connected to the midpoint terminal 14 and an emitter connected to the ground terminal 13.

The output switching elements 10 and 20 have diodes 17 and 18 for absorbing regenerative current flowing due to back electromotive force generated when an external load (not shown) has a large inductance. Correspondingly connected in parallel.

The high side drive circuit 15 includes a first I
The high-side output IGB is controlled by turning on / off the supply output of the charging current to the gate capacitance of the high-side output IGBT 10 according to the GBT drive control signal input HIN.
This is for controlling the gate potential of T10.

In this case, the high-side drive circuit 15
Is to shift the level of the drive control signal input HIN by supplying a boosted voltage obtained by boosting the power supply voltage VCC of the control circuit system by the booster circuit 19 as an operation power supply. The boosted voltage is supplied to the gate of the side output IGBT 10.

The booster circuit 19 includes a node to which a power supply voltage VCC of a control circuit system of the integrated circuit is applied and the midpoint terminal 1.
4 and a bootstrap diode D and a capacitor C are connected in series.
Is supplied as an operating power supply for the high-side drive circuit 15.

The booster circuit 19 charges the capacitor C when the low-side output IGBT 20 is on, and supplies the midpoint terminal 1 when the low-side output IGBT 20 is off and the high-side output IGBT 10 is on.
4, the potential of the cathode of the diode D (the connection node with the capacitor C, the boosted output node) increases accordingly.

The low-side drive circuit 16 has a second I
The low side output IGB is controlled by turning on / off the supply output of the charging current to the gate capacitance of the low side output IGBT 20 according to the GBT drive control signal input LIN.
The gate potential of T20 is controlled.

The low-side drive circuit 16 is supplied with the power supply voltage VCC as an operating power supply, and
When the GBT 20 is turned on, a drive voltage equal to the power supply voltage VCC is supplied to the gate of the low-side output IGBT 20.

During the normal operation of the high voltage power integrated circuit, during the period when the high side output IGBT 10 is on and the low side output IGBT 20 is off, the current flowing from the high side output IGBT 10 to the midpoint terminal 14 causes an external load. , And the voltage of the midpoint terminal 14 (output voltage OUT) is almost the high power supply voltage VBB.

On the other hand, the low-side output IGB
While T20 is on and the high-side output IGBT 10 is off, current flows from the external load into the midpoint terminal 14, and the voltage at the midpoint terminal 14 (output voltage OUT) is approximately V
CEsat (saturation voltage between the collector and the emitter of the IGBT 10).

As shown in FIG. 7, in a conventional high withstand voltage power integrated circuit having an N-channel IGBT as an output switch element, the IGB shown in FIG.
Collector current IC of T vs. collector-emitter voltage VCE
As in the characteristics, the collector current IC does not saturate until the collector-emitter voltage VCE reaches the saturation voltage VCEsat, so that the following problems occur.

The voltage VBS charged to the bootstrap capacitor C of the booster circuit 19 when the high voltage power integrated circuit is started is determined by setting the power supply voltage of the control circuit system to VCC, the booster circuit 1
When the forward voltage drop of the bootstrap diode D 9 is represented by VF, and the collector-emitter saturation voltage of the IGBT 20 is represented by VCEsat, VBS = VCC-VF-VCEsat (1)

When the power supply voltage VCC of the control circuit system decreases (or when a low voltage is used as the power supply voltage VCC), the charging voltage VBS of the bootstrap capacitor C expressed by the above equation (1) becomes VCC. VF + VCEsat than
Lower by the loss of

As a result, when the high-side drive circuit 15 drives the high-side output IGBT 10 on, the voltage level for driving the gate of the high-side output IGBT 10 decreases, and the starting operation of the high-side output IGBT 10 becomes unstable. In the worst case, it cannot be started.

[0023]

As described above, an output drive circuit in a conventional high-voltage power integrated circuit having an N-channel IGBT as an output switch element is provided when the power supply voltage VCC of the control circuit system is reduced. The start-up operation of the high-side output IGBT may become unstable or in the worst case due to the loss that the charging voltage VBS of the bootstrap capacitor becomes lower than VCC when the high voltage power integrated circuit is started. Had a problem that it could not be started.

The present invention has been made in order to solve the above-mentioned problems, and it is possible to reduce the loss that the charging voltage VBS of the bootstrap capacitor at the time of start-up becomes lower than the power supply voltage VCC of the control circuit system. High-side output IGBT caused by the loss that the charging voltage VBS of the bootstrap capacitor becomes lower than VCC even when the power supply voltage drops.
It is an object of the present invention to provide a high-withstand-voltage power integrated circuit capable of preventing the start-up operation from becoming unstable or unable to start.

[0025]

According to the present invention, there is provided a high withstand voltage power integrated circuit, comprising: a high power terminal to which a high power is applied; a midpoint terminal to which a load external to the integrated circuit is connected; A first output switch element for discharging current having an insulated gate transistor connected between the midpoint terminal and a first drive control signal input for driving and controlling the first output switch element; A first drive circuit for level-shifting and supplying a drive signal to the control electrode of the first output switch element in response to the level-shifted first drive control signal; a power supply node for the control circuit; A booster circuit having a bootstrap diode and a capacitor connected in series between the booster circuit and a terminal, and supplying a voltage between both ends of the capacitor as an operating power supply of the first drive circuit; A second output switch element for sinking current having an insulated gate transistor connected between the ground terminal and a second drive control signal for controlling the drive of the second output switch element; A second drive circuit for supplying a drive signal to the control electrode of the second output switch element, a first regenerative current absorbing element connected in parallel between the collector and the emitter of the first output switch element, A second regenerative current absorbing element connected in parallel between the collector and the emitter of the second output switch element; a drain and source connected in parallel between the collector and the emitter of the second output switch element; Are driven in phase with the second output switch element based on the second drive control signal input, and have a high withstand voltage N having the same high withstand voltage as the second output switch element. Yaneru MOS
And a transistor.

[0026]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 shows a block configuration of a part (output drive circuit) of a high withstand voltage power integrated circuit according to the first embodiment of the present invention and a connection relationship with the outside of the integrated circuit.

<First Embodiment> The output drive circuit shown in FIG. 1 is different from the output drive circuit of the conventional high voltage power integrated circuit described with reference to FIG.
The drain and the source are connected in parallel between the collector and the emitter of the GBT 20, and the gate is connected to the low-side output IGB based on the second IGBT drive control signal input LIN.
Driven in the same phase as T20, the low-side output IGBT20
A high-breakdown-voltage N-channel MOS transistor 21 having the same high breakdown voltage; and (2) a MOS transistor drive circuit 22 for driving the gate of the N-channel MOS transistor 21 in response to the second IGBT drive control signal input LIN. Are added, and the others are the same.

The output drive circuit of the high voltage power integrated circuit shown in FIG. 1 is a high power supply voltage VBB from a high power supply external to the integrated circuit.
(For example, 300 V to 500 V) between the high power supply terminal 12 to which the ground potential GND is applied and the ground terminal 13 to which the ground potential GND is applied. The high side output switch element 10 on the current discharging side and the low side output switch element 20 on the current sink side. Are connected by a totem pole connection, and a midpoint terminal (external load connection terminal) 14 is connected to a connection point between the two.

That is, the high-side output switch element 10 is connected between the high power supply terminal 12 and the midpoint terminal 14, and the low-side output switch element 20 is connected between the midpoint terminal 14 and the ground terminal 13. ing.

A high-side drive circuit 15 and a low-side drive circuit 16 for driving the high-side output switch element 10 and the low-side output switch element 20 are provided.

The output switch elements 10 and 20 form a part of a three-phase motor drive circuit, for example, and supply a drive current to an external load (not shown) connected to the midpoint terminal 14. An N-channel IGBT is used.

That is, the high side IGBT 10 has a collector connected to the high power supply terminal 12 and an emitter (current output terminal) connected to the midpoint terminal 14. The low-side IGBT 20 has a collector connected to the midpoint terminal 14 and an emitter connected to the ground terminal 13.

The output switching elements 10 and 20 have diodes 17 and 18 for absorbing regenerative current flowing due to back electromotive force generated when an external load (not shown) has a large inductance. Correspondingly connected in parallel.

The high-side drive circuit 15 includes a first I
The high-side output IGB is controlled by turning on / off the supply output of the charging current to the gate capacitance of the high-side output IGBT 10 according to the GBT drive control signal input HIN.
This is for controlling the gate potential of T10.

In this case, the high-side drive circuit 15
Is to shift the level of the drive control signal input HIN by supplying a boosted voltage obtained by boosting the power supply voltage VCC of the control circuit system by the booster circuit 19 as an operation power supply. The boosted voltage is supplied to the gate of the side output IGBT 10.

The booster circuit 19 includes a node to which the power supply voltage VCC of the control circuit system of the integrated circuit is applied and the midpoint terminal 1
4 and a bootstrap diode D and a capacitor C are connected in series.
Is supplied as an operating power supply for the high-side drive circuit 15.

The booster circuit 19 charges the capacitor C when the low-side output IGBT 20 is on, and supplies the midpoint terminal 1 when the low-side output IGBT 20 is off and the high-side output IGBT 10 is on.
4, the potential of the cathode of the diode D (the connection node with the capacitor C, the boosted output node) increases accordingly.

The low-side drive circuit 16 has a second I
The low side output IGB is controlled by turning on / off the supply output of the charging current to the gate capacitance of the low side output IGBT 20 according to the GBT drive control signal input LIN.
The gate potential of T20 is controlled.

The low-side drive circuit 16 is supplied with the power supply voltage VCC as operating power, and
When the GBT 20 is turned on, a drive voltage equal to the power supply voltage VCC is supplied to the gate of the low-side output IGBT 20.

Further, in this embodiment, the low-side output I
The drain-source of the N-channel MOS transistor 21 for high breakdown voltage is connected in parallel between the collector and the emitter of the GBT 20. This MOS transistor 21
The substrate region and the source are connected to each other. Then, in response to the second IGBT drive control signal input LIN, an MO for driving the gate of the high breakdown voltage N-channel MOS transistor 21 in the same phase as the low side output IGBT 20 is provided.
An S transistor drive circuit 22 is provided.

In the high-breakdown-voltage power integrated circuit shown in FIG. 1, the drain current ID of the high-breakdown-voltage N-channel MOS transistor versus the drain-source voltage VDS is, for example, as shown in FIG. In this state, the drain-source ON voltage VDSon is almost 0V.

Therefore, during the normal operation of the high withstand voltage power integrated circuit shown in FIG.
During the period in which the low-side output IGBT 20 is in the off state and the low-side output IGBT 20 is in the on state, the current flowing from the high-side output IGBT 10 to the midpoint terminal 14 drives the external load,
(Output voltage OUT) is almost the high power supply voltage VBB.

On the other hand, the low-side output IGB
While T20 is on and the high-side output IGBT 10 is off, current flows from the external load side to the midpoint terminal 14, and the voltage at the midpoint terminal 14 (output voltage OUT) is substantially zero.
V (the ON voltage between the drain and source of the N-channel MOS transistor 21 for high breakdown voltage).

When the high-voltage power integrated circuit shown in FIG. 1 is started, the voltage VBS charged to the bootstrap capacitor C of the booster circuit 19 is determined by setting the power supply voltage of the control circuit system at VCC and the booster circuit 19 If the forward voltage drop of the bootstrap diode D is represented by VF and the on-voltage between the drain and source of the N-channel MOS transistor 21 for high withstand voltage is represented by VDSon, VBS = VCC-VF-VDSon (2) The charging voltage VBS at the time is VF + V more than VCC.
It becomes lower by the loss of DSon.

That is, the voltage VBS charged to the bootstrap capacitor C of the booster circuit 19 when the high-voltage power integrated circuit is started is equal to the voltage of the present embodiment as shown by the above equation (2) and the above equation (1). Since VDSon <VCEsat as compared with the conventional example as shown by the following equation, VCEsat−V is greater in the present embodiment than in the conventional example.
It will be higher by DSon.

Since VDSon is resistive and almost zero, VBS in the above equation (2) finally becomes VCC-VF.
Thus, the charging voltage VBS of the capacitor C is higher by VCEsat in the present embodiment than in the conventional example.

As a result, according to the present embodiment, it is possible to reduce the loss that the charging voltage VBS of the bootstrap capacitor drops below VCC when the high voltage power integrated circuit is started. In other words, even when the power supply voltage VCC of the control circuit system is lowered, the voltage for driving the gate of the high-side output IGBT 10 when the high-side drive circuit 15 turns on the high-side output IGBT 10 at the time of activation of the high withstand voltage power integrated circuit. The level decrease can be reduced.

Accordingly, the charging voltage VBS of the bootstrap capacitor C becomes V
High-side output IG due to loss that drops below CC
It is possible to prevent the starting operation of the BT 10 from becoming unstable or from being unable to start.

Normally, the high-side IGBT 1
On the 0 side, the overcurrent of the high-side output IGBT 10 is detected, an overcurrent detection signal is output, and the overcurrent detection signal is transmitted to the high-side drive circuit 15 so that the high-side output IGBT 10 is turned off. Control to prevent its destruction (protect high-side output IGBT 10)
An overcurrent limiting circuit is provided.

The overcurrent limiting circuit controls the low-side output IGBT 20 to an off state by transmitting an overcurrent detection signal to the low-side drive circuit 16 as necessary, thereby preventing its destruction.

<Modification of First Embodiment> In FIG. 1 described above, the MOS transistor drive circuit 22 includes a second IG
The N-channel MOS transistor 21 for high withstand voltage is changed to a low side output IGBT according to the BT drive control signal input LIN.
20 and is driven in the same phase as, for example, N for high withstand voltage.
Channel MOS transistor 21 and low-side output IG
The BT 20 may be driven at the same timing. However, in order to prevent a high voltage from being applied between the drain and the source of the high breakdown voltage N-channel MOS transistor 21 during the rising transition time tr required for the rising of the low-side output IGBT 20. It is desirable to carry out the modification as shown in FIG.

That is, in the modification of the first embodiment, as compared with the first embodiment, as shown in FIG. 2, the timing at which the N-channel MOS transistor 21 for high breakdown voltage is turned on is such that the low-side output IGBT 20 is turned on. The MOS transistor drive circuit 22 is provided with a rise delay characteristic so as to be delayed at least by the above-mentioned tr from a certain timing.

Thus, when the low-side output IGBT 20 is turned on at the time of activation of the high withstand voltage power integrated circuit,
A high voltage is applied between the collector and the emitter of the low-side output IGBT 20 and the current concentrates, and the current does not concentrate between the drain and the source of the N-channel MOS transistor 21 for high breakdown voltage.

FIG. 3 shows a block configuration of a part (output drive circuit) of a high withstand voltage power integrated circuit according to a second embodiment of the present invention and a connection relationship with the outside of the integrated circuit.
In FIG. 1 described above, when the high-side output IGBT 10 changes from the on state to the off state, a regenerative current flowing from the ground potential GND may flow through the high-breakdown-voltage N-channel MOS transistor 21 and destroy the N-channel MOS transistor 21. In order to avoid this, it is desirable to implement as described below.

<Second Embodiment> In the second embodiment shown in FIG. 3, compared to the first embodiment shown in FIG. 1, the distance between the source of the N-channel MOS transistor 21 for high breakdown voltage and the ground terminal is higher. A low breakdown voltage N-channel MOS transistor having a breakdown voltage lower than that of the high breakdown voltage N-channel MOS transistor 21;
The drain and source of the S transistor 23 are inserted and connected, the drain and the substrate region are connected to each other, and the gate thereof is in phase with the second output switch element 20 based on the second drive control signal input LIN. , And the other components are the same, and therefore are denoted by the same reference numerals as those in FIG.

According to the second embodiment, the high-side output IG
When the BT 10 changes from the on state to the off state, a PN junction diode acting as a reverse element acts on the regenerative current flowing from the ground potential GND in the region between the substrate region and the source of the N-channel MOS transistor 23 for low breakdown voltage. Since the regenerative current is prevented from flowing through the low-breakdown-voltage N-channel MOS transistor 23 and the high-breakdown-voltage N-channel MOS transistor 21, their destruction can be prevented.

Since the low-breakdown-voltage element has a considerably smaller pattern area than the high-breakdown-voltage element, the increase in chip size and chip cost associated with the addition of the low-breakdown-voltage N-channel MOS transistor 23 is almost nil. Does not occur.

<Modification of Second Embodiment> In FIG. 3 described above, the MOS transistor drive circuit 22 includes a second IG
The N-channel MOS transistor 21 for high breakdown voltage and the N-channel MOS transistor 23 for low breakdown voltage are output to the low-side output IGBT 2 according to the BT drive control signal input LIN.
0 is driven at the same timing as the low-side output IGBT 20, but the N-channel M for high breakdown voltage is used during the rise transition time tr required for the rise of the low-side output IGBT 20.
OS transistor 21 or N-channel M for low breakdown voltage
In order to prevent a high voltage from being applied between the drain and the source of the OS transistor 23, it is desirable to carry out a modification as shown in FIG.

That is, in the modification of the second embodiment, as compared with the second embodiment, as shown in FIG. 4, an N-channel MOS transistor 21 for high breakdown voltage and an N-channel M
The MOS transistor drive circuit 22 is provided with a rise delay characteristic so that the timing at which the OS transistor 23 is turned on is delayed at least by the aforementioned tr than the timing at which the low-side output IGBT 20 is turned on.

Thus, when the low-side output IGBT 20 is turned on at the time of activation of the high withstand voltage power integrated circuit,
A high voltage is applied between the collector and the emitter of the low-side output IGBT 20 and the current concentrates, and the current does not concentrate on the N-channel MOS transistor 21 for high breakdown voltage and the N-channel MOS transistor 23 for low breakdown voltage.

[0061]

As described above, according to the present invention, the charging voltage V of the bootstrap capacitor at the time of startup is obtained.
BS can reduce a loss that is lower than the power supply voltage VCC of the control circuit system. Even when VCC decreases, the high-side output IGBT of the high-side output IGBT caused by the loss that the charging voltage VBS of the bootstrap capacitor falls below VCC can be reduced. It is possible to provide a high withstand voltage power integrated circuit which can prevent the starting operation from becoming unstable or from being unable to start.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram showing a configuration of an output drive circuit according to a first embodiment of a high withstand voltage power integrated circuit of the present invention.

FIG. 2 is a circuit diagram showing a MOS transistor driving circuit shown in FIG.
FIG. 9 is a timing chart showing an example of an OS transistor delay drive signal waveform.

FIG. 3 is a configuration explanatory view showing an output drive circuit according to a second embodiment of the high withstand voltage power integrated circuit of the present invention.

FIG. 4 is a circuit diagram showing M by a MOS transistor driving circuit in FIG. 3;
FIG. 9 is a timing chart showing an example of an OS transistor delay drive signal waveform.

FIG. 5 is a characteristic diagram showing an example of a voltage-current characteristic of a MOS transistor.

FIG. 6 is a characteristic diagram showing an example of a voltage-current characteristic of the IGBT.

FIG. 7 is a configuration explanatory view showing an output drive circuit of a conventional high withstand voltage power integrated circuit.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... High side IGBT, 12 ... High power terminal, 13 ... Ground terminal, 14 ... Middle terminal of IC, 15 ... High side drive circuit, 16 ... Low side drive circuit, 17, 18 ... Diode, 19 ... Boost circuit, 20 ... Low side IGBT.

Claims (6)

[Claims] 1. A high power terminal to which a high power is applied, a midpoint terminal to which a load external to an integrated circuit is connected, and an insulated gate transistor connected between the high power terminal and the midpoint terminal A first output switch element for discharging current, comprising: a first output switch element for driving and controlling the first output switch element;
A first drive circuit for level-shifting the drive control signal input of the first drive circuit and supplying a drive signal to the control electrode of the first output switch element in accordance with the level-shifted first drive control signal; A booster circuit having a bootstrap diode and a capacitor connected in series between a power supply node and the midpoint terminal, and supplying a voltage between both ends of the capacitor as an operation power supply of the first drive circuit; A second output switch element for sinking current having an insulated gate transistor connected between the midpoint terminal and a ground terminal; and a second output switch element for driving and controlling the second output switch element.
A second drive circuit for supplying a drive signal to the control electrode of the second output switch element in accordance with the drive control signal input of the first output switch element; and a first drive circuit connected in parallel between the collector and the emitter of the first output switch element. A second regenerative current absorbing element connected in parallel between the collector and the emitter of the second output switch element; and a drain and a drain between the collector and the emitter of the second output switch element. The sources are connected in parallel, and the gate is connected to the second
And a high-breakdown-voltage N-channel MOS transistor that is driven in phase with the second output switch element based on the drive control signal input and has the same high breakdown voltage as the second output switch element. High voltage power integrated circuit. 2. The high withstand voltage power integrated circuit according to claim 1, wherein the high withstand voltage power integrated circuit includes a high withstand voltage N
A high voltage power integrated circuit, wherein the channel MOS transistor is driven to an on state with a predetermined time delay from the second output switch element. 3. A high-voltage power integrated circuit according to claim 1, wherein said high-voltage power integrated circuit is inserted between a source of said high-voltage N-channel MOS transistor and a ground terminal, and has a gate connected to said second drive control signal input. N-channel M for low breakdown voltage, which is driven in phase with the second output switch element and has a lower breakdown voltage than the N-channel MOS transistor for high breakdown voltage based on
A high withstand voltage power integrated circuit, further comprising an OS transistor. 4. The high withstand voltage power integrated circuit according to claim 3, wherein the low withstand voltage N
A high voltage power integrated circuit, wherein the channel MOS transistor is driven to an on state with a predetermined time delay from the second output switch element. 5. The high breakdown voltage power integrated circuit according to claim 4, wherein said low breakdown voltage N-channel MOS transistor is driven at the same timing as said high breakdown voltage N-channel MOS transistor. Power integrated circuit. 6. The high withstand voltage power integrated circuit according to claim 2, wherein the predetermined time is at least a time corresponding to a time when the second output switch element is turned on from an off state. High voltage power integrated circuit.