JPH11168213A - Manufacture of thin film transistor and equipment for manufacturing it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and equipment, which can make a compensation for unbounded atoms in a semiconductor thin film with good controllability. SOLUTION: When unbounded atoms in a thin film transistor formed with a source electrode 8, a drain electrode 9 and a gate electrode 10 are compensated, voltages VS, VD and VG, which are respectively applied to the above respective electrodes, are controlled by an external circuit and while transistor characteristics of the transistor are monitored, a hydrogenation, which is a compensation for unbounded atoms in a semiconductor thin film, is executed. Thereby, the end point of the hydrogenation can be accurately decided. As a result, the formation of the thin film transistor with uniform characteristics can be easily realized and a stable production process, which has little irregularity in the qualities of products, of the transistor can be realized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention is applied to an active matrix type liquid crystal display (LCD) and the like.
The present invention relates to a method and an apparatus for manufacturing a thin film transistor (TFT).
And a method of compensating for dangling bonds in a semiconductor thin film.

[0002]

2. Description of the Related Art When a channel region of a TFT is formed of polycrystalline silicon, the effective mobility μ of carriers is increased as compared with a case where the channel region is formed of amorphous silicon. In particular, the low-temperature process is actively studied because a drive circuit can be formed on an inexpensive glass substrate. However, many trap levels that do not exist in crystalline silicon are generated in polycrystalline silicon. This trap level is TF
It is known that the threshold voltage V _{th of} T is increased.
This leads to an increase in gate voltage required for FT operation. The increase in the gate voltage leads to deterioration of the switching operation of the TFT, which is a factor of reducing reliability.

[0003]

It is known that the above trap levels are mainly caused by dangling bonds of polycrystalline silicon constituting a semiconductor thin film. Therefore, a technique for compensating for dangling bonds, such as a hydrogenation treatment, has conventionally been used. In this method, polycrystalline silicon is hydrogenated by, for example, performing a heat treatment in a plasmad hydrogen gas atmosphere after forming a TFT.

Therefore, a conventional hydrogenation apparatus will be described below with reference to FIG. Hydrogenation chamber 41
Is provided with a heater 42 for heating the glass substrate 43 on which the TFT is manufactured, and the temperature of the glass substrate 43 can be monitored by a thermocouple 44.
The substrate temperature can be controlled to be constant by the external control device 48. Further, the inside of the chamber 41 can be controlled to a hydrogen-containing atmosphere by a dry vacuum pump 45 and a flow rate controller 46, and a plasma discharge can be generated by a high-frequency introduction rod 47 to convert hydrogen gas into plasma.

However, in this device, the degree of progress of hydrogenation depends sensitively on the density of dangling bonds contained in polycrystalline silicon before hydrogenation, and also depends on the TFT structure such as channel length and width. Therefore, there is a problem that the controllability is poor, and as a result, the characteristics of the manufactured TFT vary, which causes a decrease in yield and an increase in cost.

In recent years, Japanese Patent Application Laid-Open No. 9-139507 has proposed hydrogenation using an ion doping technique, which is generally used for impurity ion implantation for reducing the resistance of a source region and a drain region. Attempts were made to improve the quality. Therefore, this technique will be described with reference to FIG.

First, on an insulating substrate 51, a buffer film 52,
A gate electrode 53 is formed (FIG. 5A). Next, a polycrystalline semiconductor thin film 55 overlapping with the gate electrode 53 via the gate insulating film 54 is formed. Thereafter, an impurity is implanted into the semiconductor thin film in a region-selective manner by an impurity implantation step,
A source region S and a drain region D of the FT are formed, and at the same time, a channel region Ch matching with the gate electrode 53 is provided between both regions (FIG. 5B). Next, the semiconductor thin film 55
After the surface of the semiconductor thin film 55 is coated with the SiO2 film 58, hydrogen gas is ionized, the electric field is accelerated, and ion doping is performed to introduce hydrogen into the semiconductor thin film 55 to compensate for dangling bonds of the semiconductor thin film 55 (FIG. 5C). ). Finally, a contact hole reaching the source region S and the drain region D is formed, and a source electrode (signal electrode) 510 and a drain electrode (pixel electrode) 511 are formed (FIG. 5D).

In this technique, hydrogen ions are collectively irradiated by ion doping without using hydrogen plasma as in the prior art.
Hydrogen can be introduced into a predetermined site of. However, a continuous heat treatment is indispensable to stabilize the doped hydrogen, and the heat treatment temperature and time are the same as in the case of the heat treatment in a plasmad hydrogen gas atmosphere. In this case, the controllability is not sufficiently established because it depends sensitively on the density of dangling bonds contained in the TFT and also on the TFT structure such as the length and width of the channel.

Accordingly, an object of the present invention is to provide a method and an apparatus capable of compensating for dangling bonds of a semiconductor thin film with good controllability in order to solve the above problems.

[0010]

Means for Solving the Problems In order to solve the above-mentioned problems, the following measures have been taken.

First, a method of manufacturing a thin film transistor according to the present invention includes an insulating substrate, a semiconductor thin film formed on the insulating substrate, a source region and a drain region formed in a part of the semiconductor thin film, For a thin film transistor having a source electrode and a drain electrode electrically connected to a region and a drain region, respectively, and a gate electrode formed on the semiconductor thin film via a gate insulating film, the source electrode, the drain electrode and Compensating for dangling bonds present in the semiconductor thin film while measuring transistor characteristics using the gate electrode, and terminating the compensation for dangling bonds when the transistor characteristics reach a predetermined value. It has a configuration. In this way,
The progress of the dangling hand compensation depends on the density of dangling hands contained in the polycrystalline silicon before compensation and the TF such as the length and width of the channel.
Even if it depends on the T structure, compensation for dangling bonds is performed while actually confirming transistor characteristics, so that controllability is significantly improved. Therefore, the characteristics of the manufactured TFT have very little variation. As a result, it is very effective for improving yield and reducing costs. The present invention provides a source electrode, in which dangling compensation is necessary for measuring TFT characteristics,
The present invention can be widely applied in a case where it is effective even after the formation of the drain electrode and the gate electrode.

In the above-described method of manufacturing a thin film transistor, if the semiconductor thin film is a polycrystalline silicon thin film, the polycrystalline silicon thin film is currently most commonly used as a polycrystalline semiconductor thin film. The effective mobility μ of the carrier is larger than that of the silicon thin film, and a drive circuit can be formed on an inexpensive glass substrate by a low-temperature process. The present invention is effective for a TFT using a polycrystalline silicon thin film.

In the above-described method of manufacturing a thin film transistor, it is preferable that the compensation of dangling bonds is hydrogenation of dangling bonds. In fact, hydrogenation is currently the most commonly used method of compensating for dangling bonds. The present invention also
Hydrogenation was used as the dangling hand compensation method. In the present invention, it is necessary that the dangling bond compensation is effective even after the source electrode, the drain electrode, and the gate electrode required for measuring the TFT characteristics are formed. And it is widely known that hydrogenation satisfies this requirement. This is because hydrogen atoms are very small, so that hydrogen atoms can easily pass through various thin films constituting a TFT and reach a semiconductor thin film that requires dangling bond compensation.

Further, in the above-described method of manufacturing a thin film transistor, if the transistor characteristics monitored at the same time as the compensation of dangling bonds are at least one characteristic selected from carrier mobility, on-current, and threshold voltage, Since it has been confirmed that the characteristics greatly depend on the progress of dangling compensation represented by hydrogenation, the characteristics are effective and preferable for detecting the end point of dangling compensation.

Next, an apparatus for manufacturing a thin film transistor according to the present invention comprises: an insulating substrate; a semiconductor thin film formed on the insulating substrate; a source region and a drain region formed in a part of the semiconductor thin film; An apparatus for manufacturing a thin film transistor having a source electrode and a drain electrode electrically connected to a source region and a drain region, respectively, and a gate electrode formed on the semiconductor thin film via a gate insulating film, wherein the source electrode A characteristic measuring unit having three terminals connectable to the drain electrode and the gate electrode, and an external circuit for measuring characteristics of the thin film transistor with the three terminals; The uncombined hand compensating unit for compensating the uncombined hand and the transistor It has a structure comprising a time adjustment unit that adjusts a substantial operating time of the hand compensating unit. According to this configuration, even if the time required for the dangling hand compensation depends on the dangling hand density contained in the polycrystalline silicon before compensation and the TFT structure such as the length and width of the channel, the TF is actually increased.
Since uncombined hand compensation can be performed while checking the T characteristic, controllability is significantly improved. Conventionally, the compensation processing time of an unbonded hand has been set empirically, and therefore, the T
Variations in the characteristics of the FT inevitably occurred. However, with this device, the processing time can be controlled by the time adjustment unit with reference to the TFT characteristics obtained by the characteristic measurement unit.
Therefore, the characteristics of the manufactured TFT have very little variation. As a result, yield improvement and cost reduction can be achieved by using the present apparatus. According to the present invention, the characteristic measuring unit needs a source electrode, a drain electrode, and a gate electrode to measure TFT characteristics. Therefore, it can be used when the uncoupling compensation is effective even after the TFT is manufactured.

In the above-described thin film transistor manufacturing apparatus, it is preferable that the dangling compensator is a hydrogenation unit. In fact, hydrogenation is currently the most commonly used method of compensating for dangling bonds. The present invention has also been achieved by using a hydrogenation device as the dangling hand compensator. In the device of the present invention, since the characteristic measurement unit needs to measure the TFT characteristics, it is necessary that the TFT having the source electrode, the drain electrode, and the gate electrode be effective even when the dangling hand compensation is performed. It is. And it is widely known that hydrogenation satisfies this requirement. This is because hydrogen atoms are very small, so that hydrogen atoms can easily pass through various thin films constituting a TFT and reach a semiconductor thin film that requires dangling bond compensation.

In the above-described apparatus for manufacturing a thin film transistor, the transistor characteristics measurable by the characteristic measuring unit are at least one transistor characteristic selected from carrier mobility, on-current, and threshold voltage. It has been confirmed that the characteristics greatly depend on the progress of dangling compensation represented by hydrogenation. Therefore,
This is effective and preferable for detecting the end point of the dangling hand compensation.

[0018]

(Embodiment 1) A method of manufacturing a thin film transistor according to Embodiment 1 of the present invention will be described in detail with reference to the drawings. FIG. 1 is a sectional view schematically showing a method of compensating for dangling bonds of a thin film transistor according to the present invention.

First, a TFT structure is manufactured by a general method. For example, an amorphous silicon thin film having a thickness of 50 nm is formed on the insulating substrate 1 by, for example, plasma CVD (Plasma CVD).
It is formed by the Enhanced Chemical Vapor Deposition method and crystallized into a semiconductor thin film 2 made of a polycrystalline silicon thin film by an excimer laser annealing method. At this time, when the glass substrate is used as the insulating substrate 1, a buffer film made of, for example, SiO ₂ is provided between the insulating substrate 1 and the semiconductor thin film 2 in order to suppress the diffusion of the alkali metal in the glass substrate. Is preferably formed. Thereafter, the semiconductor thin film 2 is processed into an island shape so as to match the element portion of each TFT. In this case, as the glass material of the insulating substrate 1, for example, NA-35 made of sea squirt glass can be used.

Next, an insulating film having a thickness of 90 nm is formed on, for example, S
Atmospheric Chemical Vapor Depo with iO2
and a two-layer metal thin film of Al—Zr alloy / Ti is formed on the upper surface by sputtering or the like. In this state, the gate insulating film 6 and (part of) the gate electrode 10 are processed and formed by photolithography and etching technology.

Thereafter, using the gate electrode 10 as a mask, phosphorus ions are doped as impurity ions by an ion doping technique to form the source region 3, the drain region 4 and the channel region 5.

Then, the entire surface is made of SiO ₂ or the like having a thickness of 3
A 00 nm insulating film is formed, and the interlayer insulating film 7 is processed again using photolithography and etching technology.
Contact holes are provided to reach the source region 3 and the drain region 4, respectively.

Next, a two-layer metal thin film of Al / Ti is formed on the entire surface, and is again processed into a source electrode 8, a drain electrode 9 and a gate electrode 10 by photolithography and etching techniques. Since the TFT manufactured as described above contains a large number of dangling bonds in the semiconductor thin film, it is necessary to compensate for this.

Then, the manufactured TFT is heat-treated at 350 ° C. in an atmosphere containing hydrogen gas which has been turned into plasma. The substrate temperature may be adjusted according to the density of the hydrogenated plasma gas, and is preferably 300 ° C. or more and 600 ° C. or less. At the time of hydrogenation, since the TFT structure has already been completed, as shown in FIG.
And voltages VS, VD and V applied to the gate electrode 10.
Hydrogenation can be performed while controlling G by an external circuit and monitoring TFT characteristics. As specific TFT characteristics, for example, an on-state current is employed in the present embodiment. The measurement conditions are, for example, VS = 0, VD = 6V, VG
= 15V.

FIG. 2 shows the relationship between the hydrogenation time and the on-current. It has been shown that the on-current increases with the progress of the hydrogenation and eventually saturates. Therefore, if the on-current is set to, for example, 1 × 10 −4 A, the hydrogenation is terminated in advance so that a TFT having the same on-current characteristics can always be manufactured.

As described above, according to the present embodiment, it is possible to easily manufacture a TFT having uniform characteristics, and to realize a stable manufacturing process with little variation in quality between products.

In this embodiment, hydrogenation is performed as a means for compensating for dangling bonds. This is because hydrogenation is currently the most commonly used method for compensating for dangling bonds. In the present invention, the step of compensating for dangling bonds is performed after the source electrode, the drain electrode, and the gate electrode, which are necessary for measuring TFT characteristics, are manufactured. At this time, hydrogen atoms are very small. Hydrogenation was performed because it easily passed through various thin films constituting the TFT and reached a semiconductor thin film requiring dangling bond compensation. However, the present invention is applicable as long as the means for compensating for dangling bonds can be implemented even after the TFT structure is manufactured, without depending on hydrogenation. For example, compensation of dangling bonds by fluorine can be considered.

In the present embodiment, a polycrystalline silicon thin film is used as the semiconductor thin film 2. However, the present invention is not limited to this. Compensation for dangling bonds is very important for improving characteristics. Needless to say, the present invention is applicable to all kinds of semiconductor thin films.

Further, in the present embodiment, a description has been given of a method of performing heat treatment in an atmosphere containing hydrogen gas which has been made into plasma, which is the most commonly used hydrogenation method at present. This method has a feature that hydrogenation can be performed more quickly than a method not using plasma. However, as a matter of course, the compensation of the dangling bonds can be achieved by a method in which the plasma is not used and the heat treatment is performed at 300 ° C. or more and 600 ° C. or less in an atmosphere containing hydrogen gas. 300 ° C or higher 60
When heat treatment is performed at 0 ° C. or lower, damage due to hydrogenation can be reduced, and as a result, the defective rate of a product can be reduced. However, when heat treatment is performed at 300 ° C. or higher and 600 ° C. or lower in an atmosphere containing hydrogen gas that has been converted into plasma, hydrogenation can be performed more quickly than when plasma treatment is not performed. Connect.

Further, hydrogenation utilizing the ion doping technique described in the above-mentioned JP-A-9-139507 can also be used. According to this method, hydrogen gas is ionized, and the ionized hydrogen gas is accelerated by an electric field to reduce T
After irradiating the FT with a predetermined amount, the temperature of the
Heat treatment is performed at a temperature of not more than ℃. In this case, hydrogen atoms can be surely introduced into the semiconductor thin film of the TFT, and since there is no damage by plasma, hydrogenation can be performed more quickly, which is preferable. Since it sometimes progresses, the confirmation of the transistor characteristics to be performed at the same time is preferably performed during the heat treatment.

Further, as other hydrogenation methods, there are a method of diffusing a hydrogen element contained in a gate insulating film into a channel region and a method of diffusing a hydrogen element contained in a buffer insulating film into a channel region. Generally known.
These methods can be easily implemented by performing a heat treatment after manufacturing the TFT structure, and can be used in the present invention.

Further, in the present embodiment, the TFT characteristics monitored at the same time as the compensation of dangling bonds are limited to the ON current. However, it was also confirmed that other TFT characteristics such as carrier mobility and threshold voltage greatly changed depending on the degree of progress of the compensation of dangling bonds. Therefore, the above characteristics can also be used as the TFT characteristics referred to in the present invention.

(Embodiment 2) Hereinafter, an apparatus for manufacturing a thin film transistor according to Embodiment 2 of the present invention will be described in detail with reference to the drawings. The present embodiment relates to an uncombined hand compensator, and FIG. 3 is a schematic diagram of an uncombined hand compensator of the present embodiment, specifically, a hydrogenation apparatus using plasma.

This device is roughly composed of three parts.
It is a hydrogenation unit, a characteristic measurement unit, and a time control unit.

First, the hydrogenation section will be described. A heater 32 is provided in the hydrogenation chamber 31 so that a glass substrate 33 on which a polycrystalline silicon TFT is manufactured can be heated, and the temperature of the glass substrate 33 is controlled by a thermocouple 34.
You can monitor with. Further, the inside of the chamber 31 can be controlled to a hydrogen-containing atmosphere by a dry vacuum pump 35 and a flow rate controller 36, and a plasma discharge can be generated by a high-frequency introduction rod 37 to convert hydrogen gas into plasma. Further, the substrate temperature and the plasma density are kept constant by the external control system 311.

Next, the characteristic measuring section will be described. Source terminal 38, drain terminal 39, and gate terminal 310
Is connected to each of the source electrode, drain electrode and gate electrode of the TFT for hydrogenation.
Measure the ON current of. The obtained TFT characteristics can be analyzed by the external control system 311.

Finally, the time control unit stops the plasma discharge when the characteristic analyzed by the characteristic control unit reaches the characteristic of a predetermined value, thereby lowering the substrate temperature. The hydrogenation can be terminated. For example, it is preferable that the hydrogenation unit, the characteristic measurement unit, and the time control unit be controlled collectively by the same external control system 311.

In the hydrogenation apparatus according to this embodiment, the terminal of the hydrogenation can be clearly determined by connecting a terminal to the TFT having an electrode. That is, the hydrogenation method according to the first embodiment can be performed by the apparatus described in the present embodiment. According to the device described in the present embodiment, the time required for dangling hand compensation depends on the dangling hand density contained in the polysilicon before compensation and the TFT structure such as the length and width of the channel. ,
Even if it fluctuates, dangling hand compensation can be performed while actually checking the TFT characteristics, so that controllability is significantly improved.

In the apparatus according to this embodiment, T
It is easily presumed that the FT can be applied to either case, whether the FT is formed directly on an insulating substrate or through a buffer insulating film.

In this embodiment, the semiconductor thin film is described as being limited to a polycrystalline silicon thin film. However, a semiconductor material which can compensate for dangling bonds after a TFT structure is manufactured can be generally used. .

Further, in the present embodiment, the description of the dangling compensation is limited to hydrogenation. This is because hydrogenation is currently the most commonly used method of compensating for dangling bonds. In order to use the present apparatus, it is necessary to effectively perform the dangling compensation after preparing the source electrode, the drain electrode, and the gate electrode necessary for measuring the TFT characteristics. Hydrogenation is widely known to satisfy this requirement. However, if the means for compensating for dangling bonds does not depend on hydrogenation, but can be implemented even after the TFT structure is manufactured, the present invention provides:
Applicable. As such, for example, compensation of dangling bonds by fluorine can be considered.

In the present embodiment, a method for performing hydrogenation using hydrogen gas that has been converted into plasma has been described. However, the present invention is not limited to this,
It is also possible to provide a hydrogenation apparatus including at least a heater for heating the TFT and a chamber that can be replaced with an atmosphere containing hydrogen gas. At this time, the substrate temperature
The temperature is preferably from 300 ° C to 600 ° C. In particular, 4
Preferably around 50 ° C. Further, the hydrogenation may be performed by a hydrogenation apparatus using ion doping technology in which hydrogen gas is ionized, accelerated by an electric field, and irradiated to the TFT. In this method, the actual hydrogenation proceeds during the subsequent heat treatment, so that the TF
It is convenient and preferable to refer to the T characteristic during this heat treatment.

Further, in the present embodiment, the TFT characteristics measured by the characteristic measuring section are limited to the ON current. However, the present invention is not limited to this, and the same effect can be obtained with an apparatus for measuring carrier mobility and threshold voltage. It has been confirmed that these properties largely depend on the progress of dangling compensation represented by hydrogenation.

[0044]

As described above, according to the present invention,
In the uncombined hand compensation processing of the TFT, the end point can be clearly determined. As a result, even if the optimal uncoupling compensation processing time fluctuates due to the TFT structure such as the density of uncoupling hands contained in the semiconductor thin film such as polycrystalline silicon before compensation and the length and width of the channel, the transistor is actually Since the uncombined hand compensation is performed while checking the characteristics, the controllability is significantly improved. Therefore, the prepared TF
The characteristics of T have very little variation, and as a result, are very effective in improving yield and reducing costs.

The present invention is widely applicable when the dangling compensation is effective even after the source electrode, the drain electrode, and the gate electrode required for measuring the TFT characteristics are manufactured. . In addition, in the present invention, hydrogenation is particularly suitable as a method for compensating for unbonding, and is considered to be applicable to all currently devised hydrogenation methods that can be performed after a TFT structure is manufactured. The range is very wide. Currently, compensation of dangling hands is an indispensable and important technique for TFT fabrication. Therefore, the contribution of the present invention to industrial development is very large.

[Brief description of the drawings]

FIG. 1 is a sectional view showing the concept of a method for compensating for dangling bonds of a TFT in a method for manufacturing a thin film transistor according to a first embodiment of the present invention;

FIG. 2 is a diagram showing a relationship between on-current characteristics and hydrogenation time of a TFT obtained in Embodiment 1 of the present invention.

FIG. 3 is a cross-sectional view schematically showing a TFT dangling compensator in a thin-film transistor manufacturing apparatus according to a second embodiment of the present invention;

FIG. 4 is a cross-sectional view schematically showing a conventional typical dangling-compensator of a TFT.

FIG. 5 is a TFT using a conventional ion doping technique.
Cross-sectional view of the method

[Explanation of symbols]

Reference Signs List 1 insulating substrate 2 semiconductor thin film 3 source region 4 drain region 5 channel region 6 gate insulating film 7 interlayer insulating film 8 source electrode 9 drain electrode 10 gate electrode 31 hydrogenation chamber 32 heater 33 glass substrate with TFT 34 thermocouple 35 vacuum pump 36 Flow controller 37 High frequency introduction rod 38 Source terminal 39 Drain terminal 310 Gate terminal 311 External control system 41 Hydrogenation chamber 42 Heater 43 Glass substrate with TFT 44 Thermocouple 45 Vacuum pump 46 Flow rate controller 47 High frequency introduction rod 48 External control system 51 Insulating substrate 52 Buffer film 53 Gate electrode 54 Gate insulating film 55 Semiconductor thin film 56 Mask 57 Thin film transistor 58 SiO ₂ coating 59 Interlayer insulating film 510 Signal electrode 511 Pixel electrode

Claims (7)

[Claims] An insulating substrate; a semiconductor thin film formed on the insulating substrate; a source region and a drain region formed in a part of the semiconductor thin film; For a thin film transistor having a source electrode connected to a drain electrode and a gate electrode formed on the semiconductor thin film via a gate insulating film, a transistor using the source electrode, the drain electrode and the gate electrode Manufacturing a thin film transistor, wherein the characteristics are measured while compensating for dangling bonds present in the semiconductor thin film, and when the transistor characteristics reach a predetermined value, the compensation of dangling bonds is terminated. Method. 2. The method according to claim 1, wherein the semiconductor thin film is a polycrystalline silicon thin film. 3. The method for manufacturing a thin film transistor according to claim 1, wherein the compensation of dangling bonds is hydrogenation of dangling bonds. 4. The method according to claim 1, wherein the transistor characteristics are at least one characteristic selected from carrier mobility, on-state current, and threshold voltage. 5. An electrical connection to an insulating substrate, a semiconductor thin film formed on the insulating substrate, a source region and a drain region formed in a part of the semiconductor thin film, and an electrical connection to the source region and the drain region, respectively. An apparatus for manufacturing a thin film transistor having a source electrode connected to a drain electrode and a gate electrode formed on the semiconductor thin film via a gate insulating film, wherein the source electrode, the drain electrode and the gate electrode are A characteristic measuring unit having three connectable terminals and an external circuit for measuring characteristics of the thin film transistor with the three terminals; and a dangling hand compensation for compensating for dangling hands present in the semiconductor thin film. And time for adjusting the substantial operation time of the dangling hand compensator with reference to the transistor characteristics obtained by the characteristic measuring unit. Manufacturing apparatus of a thin film transistor characterized by comprising the integer part. 6. The thin film transistor manufacturing apparatus according to claim 5, wherein the dangling bond compensating unit is a hydrogenation unit for hydrogenating dangling bonds. 7. The transistor characteristic according to claim 5, wherein the transistor characteristic measured by the characteristic measuring unit is at least one transistor characteristic selected from carrier mobility, on-current, and threshold voltage. Thin film transistor manufacturing equipment.