JPH11145192A - Method for forming solder bump - Google Patents

Method for forming solder bump

Info

Publication number
JPH11145192A
JPH11145192A JP30544897A JP30544897A JPH11145192A JP H11145192 A JPH11145192 A JP H11145192A JP 30544897 A JP30544897 A JP 30544897A JP 30544897 A JP30544897 A JP 30544897A JP H11145192 A JPH11145192 A JP H11145192A
Authority
JP
Japan
Prior art keywords
solder
electrode
substrate
flux
solder ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30544897A
Other languages
Japanese (ja)
Other versions
JP3304854B2 (en
Inventor
Seiji Sakami
省二 酒見
Tadahiko Sakai
忠彦 境
Ken Maeda
憲 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP30544897A priority Critical patent/JP3304854B2/en
Publication of JPH11145192A publication Critical patent/JPH11145192A/en
Application granted granted Critical
Publication of JP3304854B2 publication Critical patent/JP3304854B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/11Printed elements for providing electric connections to or between printed circuits
    • H05K1/111Pads for surface mounting, e.g. lay-out
    • H05K1/112Pads for surface mounting, e.g. lay-out directly combined with via connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof
    • H05K3/3478Applying solder preforms; Transferring prefabricated solder patterns
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3489Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces

Abstract

PROBLEM TO BE SOLVED: To provide a method for forming a soldered bump, without conductive failures on the opposite face to the electrode forming face of a substrate in a simple process. SOLUTION: In forming a soldered bump 5' conducted with an electrode 12 formed on a substrate 11 via a through-hole 11a of the substrate 11 on the opposite face to the electrode 12 face, flux 14a with which conductive metallic powder with satisfactory solder wettability is applied to a soldered ball 5, then the soldered ball 5 is moved on the through-hole 11a on the opposite face to the forming face of the electrode 12, and the substrate 11 is heated so that the soldered ball 5 can be fused, and the electrode 12 can be energized through the through-hole 11a with the soldered ball 5. Even when a clearance is present between the soldered ball 5 and the electrode 12, the soldered ball 5 is fused, and then the fused solder is allowed to reach the electrode surface after being introduced by the metallic powder with satisfactory solder wettability, so that conductive failures can be prevented.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電子部品や基板の
電極上に半田バンプを形成する半田バンプ形成方法に関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a solder bump on an electrode of an electronic component or a substrate.

【0002】[0002]

【従来の技術】電子部品の実装方法として半田バンプを
用いる方法が知られている。この方法は電子部品の電極
上に予め半田の突出電極である半田バンプを形成し、こ
の半田バンプを基板などの電極に半田付けするものであ
る。半田バンプを形成する方法として、従来より半田ボ
ールを電子部品などの電極上に移載する方法が用いられ
ている。
2. Description of the Related Art As a method for mounting electronic components, a method using solder bumps is known. In this method, a solder bump, which is a protruding electrode of solder, is formed in advance on an electrode of an electronic component, and the solder bump is soldered to an electrode such as a substrate. As a method of forming a solder bump, a method of transferring a solder ball onto an electrode of an electronic component or the like has been conventionally used.

【0003】ところでCSP(chip size p
ackage)などでは、電極が形成される面と半田バ
ンプが形成される面が基板の同一面でない場合がある。
すなわちパッケージを構成するテープ状の基板の片側の
面に電極が形成され、この電極が形成された面の反対面
に半田ボールを移載して溶融させ、電極位置に設けられ
た基板の貫通孔を介して溶融半田を電極に導通させて半
田バンプが形成される。以下、従来の半田バンプ形成方
法について図面を参照して説明する。図4は従来のテー
プ状の基板の部分断面図である。
[0003] By the way, CSP (chip size p)
In some cases, the surface on which the electrodes are formed and the surface on which the solder bumps are formed are not the same surface of the substrate.
That is, an electrode is formed on one surface of a tape-shaped substrate constituting a package, and a solder ball is transferred and melted on a surface opposite to the surface on which the electrode is formed, and a through hole of the substrate provided at the electrode position is provided. Then, the molten solder is conducted to the electrodes through the electrodes to form solder bumps. Hereinafter, a conventional solder bump forming method will be described with reference to the drawings. FIG. 4 is a partial sectional view of a conventional tape-shaped substrate.

【0004】図4において、テープ状の基板1の下面に
は電極2が形成されている。基板1の電極2の位置には
貫通孔3が設けられており、貫通孔3上にはフラックス
4が塗布された半田ボール5が搭載されている。半田ボ
ール5の径は貫通孔3の径より大きく設定されているた
め、半田ボール5は貫通孔3内に入り込むことはでき
ず、したがって半田ボール5は基板1の厚みのため電極
2と接触せず隙間により隔てられている。
In FIG. 4, electrodes 2 are formed on the lower surface of a tape-shaped substrate 1. A through hole 3 is provided at the position of the electrode 2 on the substrate 1, and a solder ball 5 coated with a flux 4 is mounted on the through hole 3. Since the diameter of the solder ball 5 is set to be larger than the diameter of the through hole 3, the solder ball 5 cannot enter the through hole 3. Therefore, the solder ball 5 contacts the electrode 2 because of the thickness of the substrate 1. Are separated by gaps.

【0005】[0005]

【発明が解決しようとする課題】この後基板1はリフロ
ーに送られ加熱されるが、半田ボール5は電極2と隔て
られているため、半田ボール5が溶融した後でも溶融半
田が電極2の上面まで到達せず、電極2と導通しないま
ま固化する導通不良が発生する場合がある。そこでこの
導通不良の発生を防止する対策として、半田ボール5の
移載前に貫通孔3内の電極2の表面に金属メッキを施し
たり、また電極2上にクリーム半田を充填した上に半田
ボール5を移載することなど、半田ボール5の移載に先
立って工程を追加することが行われていた。
Thereafter, the substrate 1 is sent to the reflow and heated, but since the solder balls 5 are separated from the electrodes 2, the molten solder remains on the electrodes 2 even after the solder balls 5 are melted. There is a case where conduction failure occurs in which the electrode 2 does not reach the upper surface and solidifies without being electrically connected to the electrode 2. Therefore, as a countermeasure to prevent the occurrence of the conduction failure, the surface of the electrode 2 in the through hole 3 is plated with metal before the transfer of the solder ball 5, or the solder ball is filled with cream solder on the electrode 2. For example, a step is added prior to the transfer of the solder ball 5 such as transferring the solder ball 5.

【0006】このように基板の電極形成面の反対面に半
田バンプを形成する場合には、導通不良の防止のため金
属メッキやクリーム半田塗布などの工程の追加を要し、
工程が複雑になるという問題点があった。
In the case where the solder bumps are formed on the surface of the substrate opposite to the surface on which the electrodes are formed, additional steps such as metal plating and cream solder application are required to prevent conduction failure.
There was a problem that the process became complicated.

【0007】そこで本発明は、簡単な工程で基板の電極
形成面の反対面に導通不良のない半田バンプを形成でき
る半田バンプ形成方法を提供することを目的とする。
Accordingly, an object of the present invention is to provide a solder bump forming method capable of forming a solder bump having no conduction failure on a surface opposite to an electrode forming surface of a substrate by a simple process.

【0008】[0008]

【課題を解決するための手段】請求項1記載の半田バン
プ形成方法は、基板の電極形成面の反対面上に基板の貫
通孔を介して前記電極と導通する半田バンプを形成する
半田バンプの形成方法であって、半田ボールに導電性で
半田ぬれ性の良い金属粉末を混合したフラックスを塗布
する工程と、前記フラックスが塗布された半田ボールを
前記電極形成面と反対側の基板面に移載する工程と、前
記半田ボールが移載された基板を加熱することによりこ
の半田ボールを溶融させて前記電極と半田ボールを前記
貫通孔を介して導通させる工程とを含む。
According to a first aspect of the present invention, there is provided a method for forming a solder bump on a surface opposite to an electrode forming surface of a substrate, the solder bump being electrically connected to the electrode through a through hole in the substrate. A method of applying a flux mixed with a conductive metal powder having good solder wettability to a solder ball; and transferring the solder ball coated with the flux to a substrate surface opposite to the electrode forming surface. And mounting the substrate on which the solder balls have been transferred to melt the solder balls so that the electrodes are electrically connected to the solder balls through the through holes.

【0009】請求項2記載の半田バンプ形成方法は、請
求項1記載の半田バンプ形成方法であって、前記金属粉
末が、全体量の80%以上が5〜25μmの粒径の半田
粒であるようにした。
According to a second aspect of the present invention, there is provided a method of forming a solder bump according to the first aspect of the present invention, wherein 80% or more of the metal powder is a solder particle having a particle size of 5 to 25 μm. I did it.

【0010】請求項3記載の半田バンプ形成方法は、請
求項1記載の半田バンプ形成方法であって、前記金属粉
末が、全体量の80%以上が1〜10μmの粒径の、導
電性で半田ぬれ性の良い金属粉末であるようにした。
According to a third aspect of the present invention, there is provided the method of forming a solder bump according to the first aspect, wherein the metal powder has a particle diameter of 1 to 10 μm in an amount of 80% or more of the total amount. The metal powder had good solder wettability.

【0011】各請求項記載の発明によれば、半田ボール
に導電性の半田ぬれ性の良い金属粉末を混合したフラッ
クスを塗布し、この半田ボールを電極形成面の反対側の
基板面に搭載することにより、半田ボールと電極表面と
の間に隙間がある場合でも、半田ボールが溶融した後に
は溶融半田はフラックス中の金属粉末に導かれて電極表
面に到達し、確実に電極と接合されて導通不良を防止す
ることができる。
According to the invention described in each claim, a flux in which conductive metal powder having good solder wettability is mixed is applied to the solder ball, and the solder ball is mounted on the substrate surface opposite to the electrode forming surface. By this, even if there is a gap between the solder ball and the electrode surface, after the solder ball is melted, the molten solder is guided by the metal powder in the flux, reaches the electrode surface, and is securely joined to the electrode. The conduction failure can be prevented.

【0012】[0012]

【発明の実施の形態】次に本発明の実施の形態を図面を
参照して説明する。図1は本発明の一実施の形態の半田
ボールの移載装置のフラックス転写部の部分断面図、図
2(a),(b)は同半田ボールの移載装置のフラック
ス転写部の拡大断面図、図3(a),(b),(c)は
同テープ状の基板の部分断面図である。
Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a partial cross-sectional view of a flux transfer portion of a solder ball transfer device according to an embodiment of the present invention, and FIGS. 2A and 2B are enlarged cross-sectional views of the flux transfer portion of the solder ball transfer device. FIGS. 3A, 3B, and 3C are partial cross-sectional views of the tape-shaped substrate.

【0013】まず、図1、図2を参照して半田ボールに
フラックスを塗布する方法について説明する。図1に示
す半田ボールの移載装置のフラックス転写部6は、容器
13とスキージユニット9より構成される。容器13は
水平の平らな底面を有しており、個の底面上にフラック
ス14を貯溜する。スキージユニット9は2つのスキー
ジ7を上下動させる2つのシリンダ8を備えている。2
つのスキージ7は図1に示すようにそれぞれ異る方向に
傾斜しており、シリンダ8のロッドが下降した状態で
は、スキージ7の下端部と容器13の底面との隙間は所
定隙間dに保たれる。この状態でスキージユニット9が
水平往復動することにより、2つのスキージ7は容器5
内に貯留されるフラックス4を、容器5の底面上に前述
の隙間dに等しい所定厚さdで塗布する。
First, a method of applying a flux to a solder ball will be described with reference to FIGS. The flux transfer unit 6 of the solder ball transfer device shown in FIG. 1 includes a container 13 and a squeegee unit 9. The container 13 has a horizontal flat bottom surface and stores the flux 14 on the bottom surface of the individual. The squeegee unit 9 includes two cylinders 8 for moving the two squeegees 7 up and down. 2
As shown in FIG. 1, the two squeegees 7 are inclined in different directions, and when the rod of the cylinder 8 is lowered, the gap between the lower end of the squeegee 7 and the bottom of the container 13 is maintained at a predetermined gap d. It is. When the squeegee unit 9 reciprocates horizontally in this state, the two squeegees 7
The flux 4 stored therein is applied on the bottom surface of the container 5 with a predetermined thickness d equal to the gap d described above.

【0014】次にフラックス14について説明する。フ
ラックス14は従来より用いられているフラックスに導
電性の、かつ半田ぬれ性が良い金属粉末を混合したもの
である。フラックス14中の金属粉末の割合は、体積比
で50VOL%以上が望ましく、金属粉末としては、金
や銀、銅などの金属の粉末が用いられる。また金属粉末
として半田を微細な粒状とした半田粒を用いることもで
きる。
Next, the flux 14 will be described. The flux 14 is obtained by mixing a conventionally used flux with a metal powder having good conductivity and good solder wettability. The ratio of the metal powder in the flux 14 is desirably 50 VOL% or more by volume ratio, and a metal powder such as gold, silver, or copper is used as the metal powder. Further, solder particles in which the solder is made into fine particles can be used as the metal powder.

【0015】本実施の形態では、半田ボールにフラック
ス14を塗布する方法として転写による方法を用いるた
め、良好な転写が行えるようにフラックス14中に混合
される金属粉末の粒径を所定範囲内に収める必要があ
る。前述の金や銀、銅などの場合には、全体量の80%
以上の金属粉が1〜10μmの粒径の範囲にあるものが
使用され、また半田粒を用いる場合には全体量の80%
以上の半田粒が、5〜25μmの粒径の範囲にあるもの
が使用される。
In the present embodiment, since the method of applying the flux 14 to the solder balls uses a method by transfer, the particle size of the metal powder mixed in the flux 14 is set within a predetermined range so that good transfer can be performed. Need to fit. 80% of the total amount of gold, silver, copper, etc.
The above metal powder having a particle size in the range of 1 to 10 μm is used, and when solder particles are used, 80% of the total amount is used.
The above solder particles having a particle size in the range of 5 to 25 μm are used.

【0016】次に半田ボールへのフラックス14の塗布
について説明する。図1に示すように、半田ボール5を
吸着孔10aに真空吸着した吸着ツール10をフラック
ス14が塗布された容器13上に位置させる。次いで図
2(a)に示すように、吸着ツール10の下面を容器1
3の底面上から高さhの位置まで下降させる。高さh
は、半田ボール5の下端部が容器13の底面に当接しな
い高さであり、半田ボール5の下面に適量のフラックス
14が転写されるような高さとして、実際の試行により
決定されるものである。
Next, application of the flux 14 to the solder balls will be described. As shown in FIG. 1, the suction tool 10 in which the solder balls 5 are vacuum-sucked into the suction holes 10a is positioned on the container 13 on which the flux 14 is applied. Next, as shown in FIG.
3 is lowered from the bottom surface to the position of height h. Height h
Is a height at which the lower end of the solder ball 5 does not come into contact with the bottom surface of the container 13 and is determined by actual trial as a height at which an appropriate amount of flux 14 is transferred to the lower surface of the solder ball 5 It is.

【0017】次いで、この状態から吸着ツール10を上
昇させる。すると、容器13の底面に所定厚さdで塗布
されたフラックス14は半田ボール5の下面に転写され
て付着したまま上昇する。このようにして図2(b)に
示すように、半田ボール5の下面にはフラックス14が
転写により塗布される。
Next, the suction tool 10 is raised from this state. Then, the flux 14 applied to the bottom surface of the container 13 with a predetermined thickness d is transferred to the lower surface of the solder ball 5 and rises while adhering. In this way, as shown in FIG. 2B, the flux 14 is applied to the lower surface of the solder ball 5 by transfer.

【0018】次に半田ボール5の基板上への移載につい
て説明する。図3(a)に示すように、基板11の下面
には電極12が形成されており、この電極形成面の反対
面上、すなわち基板11の上面に貫通孔11aを介して
半田バンプが形成される。この基板11上に半田ボール
5を吸着した吸着ツール10を移動させ、次いで吸着ツ
ール10を貫通孔11a上に下降させる。次いで半田ボ
ール5の真空吸着を解除して吸着ツール10が上昇する
ことにより、半田ボール5は基板11の貫通孔11aの
位置に移載される。このとき、図3(b)に示すよう
に、貫通孔11a上の半田ボール5の下端部は、基板1
1の厚みにより電極12の上面に接触しないが、半田ボ
ール5の下面に塗布されたフラックス14は電極12の
表面に接触した状態にある。
Next, the transfer of the solder balls 5 onto the substrate will be described. As shown in FIG. 3A, an electrode 12 is formed on the lower surface of the substrate 11, and a solder bump is formed on a surface opposite to the electrode forming surface, that is, on the upper surface of the substrate 11 through a through hole 11a. You. The suction tool 10 holding the solder balls 5 is moved onto the substrate 11, and then the suction tool 10 is lowered onto the through-hole 11a. Next, the vacuum suction of the solder ball 5 is released and the suction tool 10 is raised, so that the solder ball 5 is transferred to the position of the through hole 11 a of the substrate 11. At this time, as shown in FIG. 3B, the lower end of the solder ball 5 on the through hole 11a is
The flux 14 applied to the lower surface of the solder ball 5 is in contact with the surface of the electrode 12 although it does not contact the upper surface of the electrode 12 due to the thickness of 1.

【0019】次に、半田ボール5が移載された基板11
をリフロー装置に送り、加熱する。これにより半田ボー
ル5は溶融状態となるが、このときフラックス14中に
は半田ぬれ性の良い金属粉末が多量に含まれているの
で、溶融半田はこれら金属粉末に導かれて金属粉末の間
を浸潤しながら下方へ移動する。そして溶融半田は電極
12の表面に到達した後、冷却固化することにより電極
12の表面に接合される。
Next, the substrate 11 on which the solder balls 5 have been transferred
Is sent to a reflow device and heated. As a result, the solder balls 5 are in a molten state. At this time, since the flux 14 contains a large amount of metal powder having good solder wettability, the molten solder is guided by these metal powders to cause a gap between the metal powders. Move downward while infiltrating. Then, after reaching the surface of the electrode 12, the molten solder is cooled and solidified to be joined to the surface of the electrode 12.

【0020】このときフラックス14中の成分により、
電極12の表面の酸化膜が除去されて良好な半田接合が
行われ、図3(c)に示すように電極12上に貫通孔1
1aを介して半田バンプ5’が形成される。また、フラ
ックス14に混合されていた金属粉末は半田バンプ5’
中に含有されるが、これらの金属粉末は導電性のもので
あるため電極12と半田バンプ5’との導通を阻害する
ことはない。
At this time, depending on the components in the flux 14,
The oxide film on the surface of the electrode 12 is removed, and good soldering is performed. As shown in FIG.
A solder bump 5 'is formed via 1a. Further, the metal powder mixed in the flux 14 is replaced with the solder bump 5 ′.
However, since these metal powders are conductive, they do not hinder conduction between the electrodes 12 and the solder bumps 5 '.

【0021】[0021]

【発明の効果】本発明によれば、半田ボールに導電性の
半田ぬれ性が良い金属粉末を混合したフラックスを塗布
し、この半田ボールを電極形成面の反対側の基板面に搭
載するようにしたので、半田ボールが電極に直接接触し
ていない場合でも、半田ボールの溶融時にはフラックス
中の金属粉末の間を溶融半田が浸潤して電極表面まで導
かれることにより、溶融半田は電極の表面に確実に到達
して接合され、導通不良のない良好な半田バンプを形成
することができる。
According to the present invention, a solder ball is coated with a flux mixed with conductive metal powder having good solder wettability, and the solder ball is mounted on the substrate surface opposite to the electrode forming surface. Therefore, even when the solder ball is not in direct contact with the electrode, when the solder ball is melted, the molten solder infiltrates between the metal powders in the flux and is guided to the electrode surface, so that the molten solder remains on the electrode surface. It is possible to form a good solder bump which is reliably reached and joined and has no conduction failure.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態の半田ボールの移載装置
のフラックス転写部の部分断面図
FIG. 1 is a partial cross-sectional view of a flux transfer unit of a solder ball transfer device according to an embodiment of the present invention.

【図2】(a)本発明の一実施の形態の半田ボールの移
載装置のフラックス転写部の拡大断面図 (b)本発明の一実施の形態の半田ボールの移載装置の
フラックス転写部の拡大断面図
FIG. 2 (a) is an enlarged cross-sectional view of a flux transfer unit of the solder ball transfer device according to one embodiment of the present invention; and (b) a flux transfer unit of the solder ball transfer device according to one embodiment of the present invention. Enlarged sectional view of

【図3】(a)本発明の一実施の形態のテープ状の基板
の部分断面図 (b)本発明の一実施の形態のテープ状の基板の部分断
面図 (c)本発明の一実施の形態のテープ状の基板の部分断
面図
3A is a partial cross-sectional view of a tape-shaped substrate according to an embodiment of the present invention. FIG. 3B is a partial cross-sectional view of a tape-shaped substrate according to an embodiment of the present invention. Sectional view of a tape-shaped substrate in the form of

【図4】従来のテープ状の基板の部分断面図FIG. 4 is a partial sectional view of a conventional tape-shaped substrate.

【符号の説明】[Explanation of symbols]

1、11 基板 2、12 電極 4、14 フラックス 5 半田ボール 6 フラックス転写部 9 スキージユニット 10 吸着ツール 10a 吸着孔 11a 貫通孔 DESCRIPTION OF SYMBOLS 1, 11 Substrate 2, 12 Electrode 4, 14 Flux 5 Solder ball 6 Flux transfer part 9 Squeegee unit 10 Suction tool 10a Suction hole 11a Through hole

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】基板の電極形成面の反対面上に基板の貫通
孔を介して前記電極と導通する半田バンプを形成する半
田バンプの形成方法であって、半田ボールに導電性で半
田ぬれ性の良い金属粉末を混合したフラックスを塗布す
る工程と、前記フラックスが塗布された半田ボールを前
記電極形成面と反対側の基板面に移載する工程と、前記
半田ボールが移載された基板を加熱することによりこの
半田ボールを溶融させて前記電極と半田ボールを前記貫
通孔を介して導通させる工程とを含むことを特徴とする
半田バンプ形成方法。
1. A method of forming a solder bump on a surface opposite to an electrode forming surface of a substrate through a through hole of the substrate and forming a solder bump electrically connected to the electrode, the method comprising: Applying a flux mixed with good metal powder, transferring the solder ball coated with the flux to the substrate surface opposite to the electrode forming surface, and removing the substrate on which the solder ball is transferred. Heating the solder ball to melt the solder ball to make the electrode and the solder ball conductive through the through hole.
【請求項2】前記金属粉末が、全体量の80%以上が5
〜25μmの粒径の半田粒であることを特徴とする請求
項1記載の半田バンプ形成方法。
2. The method according to claim 1, wherein 80% or more of the total amount of the metal powder is 5%.
2. The method according to claim 1, wherein the solder bumps have a particle size of about 25 [mu] m.
【請求項3】前記金属粉末が、全体量の80%以上が1
〜10μmの粒径の、導電性の半田ぬれ性の良い金属粉
末であることを特徴とする請求項1記載の半田バンプ形
成方法。
3. The method according to claim 1, wherein 80% or more of the total amount of the metal powder is 1%.
2. The method for forming a solder bump according to claim 1, wherein the metal powder has a particle diameter of 10 to 10 [mu] m and has good solder wettability.
JP30544897A 1997-11-07 1997-11-07 Solder bump formation method Expired - Fee Related JP3304854B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30544897A JP3304854B2 (en) 1997-11-07 1997-11-07 Solder bump formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30544897A JP3304854B2 (en) 1997-11-07 1997-11-07 Solder bump formation method

Publications (2)

Publication Number Publication Date
JPH11145192A true JPH11145192A (en) 1999-05-28
JP3304854B2 JP3304854B2 (en) 2002-07-22

Family

ID=17945272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30544897A Expired - Fee Related JP3304854B2 (en) 1997-11-07 1997-11-07 Solder bump formation method

Country Status (1)

Country Link
JP (1) JP3304854B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002033417A (en) * 2000-07-17 2002-01-31 Rohm Co Ltd Semiconductor device
WO2006001402A1 (en) * 2004-06-24 2006-01-05 Matsushita Electric Industrial Co., Ltd. Method of soldering electronic component having solder bumps to substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002033417A (en) * 2000-07-17 2002-01-31 Rohm Co Ltd Semiconductor device
WO2006001402A1 (en) * 2004-06-24 2006-01-05 Matsushita Electric Industrial Co., Ltd. Method of soldering electronic component having solder bumps to substrate
EP1705971A3 (en) * 2004-06-24 2006-12-20 Matsushita Electric Industrial Co., Ltd. Electronic component disposing device and electronic component disposing method
US7568610B2 (en) 2004-06-24 2009-08-04 Panasonic Corporation Method of soldering electronic component having solder bumps to substrate

Also Published As

Publication number Publication date
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