JPH11145192A - Method for forming solder bump - Google Patents
Method for forming solder bumpInfo
- Publication number
- JPH11145192A JPH11145192A JP30544897A JP30544897A JPH11145192A JP H11145192 A JPH11145192 A JP H11145192A JP 30544897 A JP30544897 A JP 30544897A JP 30544897 A JP30544897 A JP 30544897A JP H11145192 A JPH11145192 A JP H11145192A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- electrode
- substrate
- flux
- solder ball
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
- H05K1/112—Pads for surface mounting, e.g. lay-out directly combined with via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3478—Applying solder preforms; Transferring prefabricated solder patterns
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3489—Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子部品や基板の
電極上に半田バンプを形成する半田バンプ形成方法に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a solder bump on an electrode of an electronic component or a substrate.
【０００２】[0002]
【従来の技術】電子部品の実装方法として半田バンプを
用いる方法が知られている。この方法は電子部品の電極
上に予め半田の突出電極である半田バンプを形成し、こ
の半田バンプを基板などの電極に半田付けするものであ
る。半田バンプを形成する方法として、従来より半田ボ
ールを電子部品などの電極上に移載する方法が用いられ
ている。2. Description of the Related Art As a method for mounting electronic components, a method using solder bumps is known. In this method, a solder bump, which is a protruding electrode of solder, is formed in advance on an electrode of an electronic component, and the solder bump is soldered to an electrode such as a substrate. As a method of forming a solder bump, a method of transferring a solder ball onto an electrode of an electronic component or the like has been conventionally used.
【０００３】ところでＣＳＰ（ｃｈｉｐ ｓｉｚｅ ｐ
ａｃｋａｇｅ）などでは、電極が形成される面と半田バ
ンプが形成される面が基板の同一面でない場合がある。
すなわちパッケージを構成するテープ状の基板の片側の
面に電極が形成され、この電極が形成された面の反対面
に半田ボールを移載して溶融させ、電極位置に設けられ
た基板の貫通孔を介して溶融半田を電極に導通させて半
田バンプが形成される。以下、従来の半田バンプ形成方
法について図面を参照して説明する。図４は従来のテー
プ状の基板の部分断面図である。[0003] By the way, CSP (chip size p)
In some cases, the surface on which the electrodes are formed and the surface on which the solder bumps are formed are not the same surface of the substrate.
That is, an electrode is formed on one surface of a tape-shaped substrate constituting a package, and a solder ball is transferred and melted on a surface opposite to the surface on which the electrode is formed, and a through hole of the substrate provided at the electrode position is provided. Then, the molten solder is conducted to the electrodes through the electrodes to form solder bumps. Hereinafter, a conventional solder bump forming method will be described with reference to the drawings. FIG. 4 is a partial sectional view of a conventional tape-shaped substrate.
【０００４】図４において、テープ状の基板１の下面に
は電極２が形成されている。基板１の電極２の位置には
貫通孔３が設けられており、貫通孔３上にはフラックス
４が塗布された半田ボール５が搭載されている。半田ボ
ール５の径は貫通孔３の径より大きく設定されているた
め、半田ボール５は貫通孔３内に入り込むことはでき
ず、したがって半田ボール５は基板１の厚みのため電極
２と接触せず隙間により隔てられている。In FIG. 4, electrodes 2 are formed on the lower surface of a tape-shaped substrate 1. A through hole 3 is provided at the position of the electrode 2 on the substrate 1, and a solder ball 5 coated with a flux 4 is mounted on the through hole 3. Since the diameter of the solder ball 5 is set to be larger than the diameter of the through hole 3, the solder ball 5 cannot enter the through hole 3. Therefore, the solder ball 5 contacts the electrode 2 because of the thickness of the substrate 1. Are separated by gaps.
【０００５】[0005]
【発明が解決しようとする課題】この後基板１はリフロ
ーに送られ加熱されるが、半田ボール５は電極２と隔て
られているため、半田ボール５が溶融した後でも溶融半
田が電極２の上面まで到達せず、電極２と導通しないま
ま固化する導通不良が発生する場合がある。そこでこの
導通不良の発生を防止する対策として、半田ボール５の
移載前に貫通孔３内の電極２の表面に金属メッキを施し
たり、また電極２上にクリーム半田を充填した上に半田
ボール５を移載することなど、半田ボール５の移載に先
立って工程を追加することが行われていた。Thereafter, the substrate 1 is sent to the reflow and heated, but since the solder balls 5 are separated from the electrodes 2, the molten solder remains on the electrodes 2 even after the solder balls 5 are melted. There is a case where conduction failure occurs in which the electrode 2 does not reach the upper surface and solidifies without being electrically connected to the electrode 2. Therefore, as a countermeasure to prevent the occurrence of the conduction failure, the surface of the electrode 2 in the through hole 3 is plated with metal before the transfer of the solder ball 5, or the solder ball is filled with cream solder on the electrode 2. For example, a step is added prior to the transfer of the solder ball 5 such as transferring the solder ball 5.
【０００６】このように基板の電極形成面の反対面に半
田バンプを形成する場合には、導通不良の防止のため金
属メッキやクリーム半田塗布などの工程の追加を要し、
工程が複雑になるという問題点があった。In the case where the solder bumps are formed on the surface of the substrate opposite to the surface on which the electrodes are formed, additional steps such as metal plating and cream solder application are required to prevent conduction failure.
There was a problem that the process became complicated.
【０００７】そこで本発明は、簡単な工程で基板の電極
形成面の反対面に導通不良のない半田バンプを形成でき
る半田バンプ形成方法を提供することを目的とする。Accordingly, an object of the present invention is to provide a solder bump forming method capable of forming a solder bump having no conduction failure on a surface opposite to an electrode forming surface of a substrate by a simple process.
【０００８】[0008]
【課題を解決するための手段】請求項１記載の半田バン
プ形成方法は、基板の電極形成面の反対面上に基板の貫
通孔を介して前記電極と導通する半田バンプを形成する
半田バンプの形成方法であって、半田ボールに導電性で
半田ぬれ性の良い金属粉末を混合したフラックスを塗布
する工程と、前記フラックスが塗布された半田ボールを
前記電極形成面と反対側の基板面に移載する工程と、前
記半田ボールが移載された基板を加熱することによりこ
の半田ボールを溶融させて前記電極と半田ボールを前記
貫通孔を介して導通させる工程とを含む。According to a first aspect of the present invention, there is provided a method for forming a solder bump on a surface opposite to an electrode forming surface of a substrate, the solder bump being electrically connected to the electrode through a through hole in the substrate. A method of applying a flux mixed with a conductive metal powder having good solder wettability to a solder ball; and transferring the solder ball coated with the flux to a substrate surface opposite to the electrode forming surface. And mounting the substrate on which the solder balls have been transferred to melt the solder balls so that the electrodes are electrically connected to the solder balls through the through holes.
【０００９】請求項２記載の半田バンプ形成方法は、請
求項１記載の半田バンプ形成方法であって、前記金属粉
末が、全体量の８０％以上が５〜２５μｍの粒径の半田
粒であるようにした。According to a second aspect of the present invention, there is provided a method of forming a solder bump according to the first aspect of the present invention, wherein 80% or more of the metal powder is a solder particle having a particle size of 5 to 25 μm. I did it.
【００１０】請求項３記載の半田バンプ形成方法は、請
求項１記載の半田バンプ形成方法であって、前記金属粉
末が、全体量の８０％以上が１〜１０μｍの粒径の、導
電性で半田ぬれ性の良い金属粉末であるようにした。According to a third aspect of the present invention, there is provided the method of forming a solder bump according to the first aspect, wherein the metal powder has a particle diameter of 1 to 10 μm in an amount of 80% or more of the total amount. The metal powder had good solder wettability.
【００１１】各請求項記載の発明によれば、半田ボール
に導電性の半田ぬれ性の良い金属粉末を混合したフラッ
クスを塗布し、この半田ボールを電極形成面の反対側の
基板面に搭載することにより、半田ボールと電極表面と
の間に隙間がある場合でも、半田ボールが溶融した後に
は溶融半田はフラックス中の金属粉末に導かれて電極表
面に到達し、確実に電極と接合されて導通不良を防止す
ることができる。According to the invention described in each claim, a flux in which conductive metal powder having good solder wettability is mixed is applied to the solder ball, and the solder ball is mounted on the substrate surface opposite to the electrode forming surface. By this, even if there is a gap between the solder ball and the electrode surface, after the solder ball is melted, the molten solder is guided by the metal powder in the flux, reaches the electrode surface, and is securely joined to the electrode. The conduction failure can be prevented.
【００１２】[0012]
【発明の実施の形態】次に本発明の実施の形態を図面を
参照して説明する。図１は本発明の一実施の形態の半田
ボールの移載装置のフラックス転写部の部分断面図、図
２（ａ），（ｂ）は同半田ボールの移載装置のフラック
ス転写部の拡大断面図、図３（ａ），（ｂ），（ｃ）は
同テープ状の基板の部分断面図である。Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a partial cross-sectional view of a flux transfer portion of a solder ball transfer device according to an embodiment of the present invention, and FIGS. 2A and 2B are enlarged cross-sectional views of the flux transfer portion of the solder ball transfer device. FIGS. 3A, 3B, and 3C are partial cross-sectional views of the tape-shaped substrate.
【００１３】まず、図１、図２を参照して半田ボールに
フラックスを塗布する方法について説明する。図１に示
す半田ボールの移載装置のフラックス転写部６は、容器
１３とスキージユニット９より構成される。容器１３は
水平の平らな底面を有しており、個の底面上にフラック
ス１４を貯溜する。スキージユニット９は２つのスキー
ジ７を上下動させる２つのシリンダ８を備えている。２
つのスキージ７は図１に示すようにそれぞれ異る方向に
傾斜しており、シリンダ８のロッドが下降した状態で
は、スキージ７の下端部と容器１３の底面との隙間は所
定隙間ｄに保たれる。この状態でスキージユニット９が
水平往復動することにより、２つのスキージ７は容器５
内に貯留されるフラックス４を、容器５の底面上に前述
の隙間ｄに等しい所定厚さｄで塗布する。First, a method of applying a flux to a solder ball will be described with reference to FIGS. The flux transfer unit 6 of the solder ball transfer device shown in FIG. 1 includes a container 13 and a squeegee unit 9. The container 13 has a horizontal flat bottom surface and stores the flux 14 on the bottom surface of the individual. The squeegee unit 9 includes two cylinders 8 for moving the two squeegees 7 up and down. 2
As shown in FIG. 1, the two squeegees 7 are inclined in different directions, and when the rod of the cylinder 8 is lowered, the gap between the lower end of the squeegee 7 and the bottom of the container 13 is maintained at a predetermined gap d. It is. When the squeegee unit 9 reciprocates horizontally in this state, the two squeegees 7
The flux 4 stored therein is applied on the bottom surface of the container 5 with a predetermined thickness d equal to the gap d described above.
【００１４】次にフラックス１４について説明する。フ
ラックス１４は従来より用いられているフラックスに導
電性の、かつ半田ぬれ性が良い金属粉末を混合したもの
である。フラックス１４中の金属粉末の割合は、体積比
で５０ＶＯＬ％以上が望ましく、金属粉末としては、金
や銀、銅などの金属の粉末が用いられる。また金属粉末
として半田を微細な粒状とした半田粒を用いることもで
きる。Next, the flux 14 will be described. The flux 14 is obtained by mixing a conventionally used flux with a metal powder having good conductivity and good solder wettability. The ratio of the metal powder in the flux 14 is desirably 50 VOL% or more by volume ratio, and a metal powder such as gold, silver, or copper is used as the metal powder. Further, solder particles in which the solder is made into fine particles can be used as the metal powder.
【００１５】本実施の形態では、半田ボールにフラック
ス１４を塗布する方法として転写による方法を用いるた
め、良好な転写が行えるようにフラックス１４中に混合
される金属粉末の粒径を所定範囲内に収める必要があ
る。前述の金や銀、銅などの場合には、全体量の８０％
以上の金属粉が１〜１０μｍの粒径の範囲にあるものが
使用され、また半田粒を用いる場合には全体量の８０％
以上の半田粒が、５〜２５μｍの粒径の範囲にあるもの
が使用される。In the present embodiment, since the method of applying the flux 14 to the solder balls uses a method by transfer, the particle size of the metal powder mixed in the flux 14 is set within a predetermined range so that good transfer can be performed. Need to fit. 80% of the total amount of gold, silver, copper, etc.
The above metal powder having a particle size in the range of 1 to 10 μm is used, and when solder particles are used, 80% of the total amount is used.
The above solder particles having a particle size in the range of 5 to 25 μm are used.
【００１６】次に半田ボールへのフラックス１４の塗布
について説明する。図１に示すように、半田ボール５を
吸着孔１０ａに真空吸着した吸着ツール１０をフラック
ス１４が塗布された容器１３上に位置させる。次いで図
２（ａ）に示すように、吸着ツール１０の下面を容器１
３の底面上から高さｈの位置まで下降させる。高さｈ
は、半田ボール５の下端部が容器１３の底面に当接しな
い高さであり、半田ボール５の下面に適量のフラックス
１４が転写されるような高さとして、実際の試行により
決定されるものである。Next, application of the flux 14 to the solder balls will be described. As shown in FIG. 1, the suction tool 10 in which the solder balls 5 are vacuum-sucked into the suction holes 10a is positioned on the container 13 on which the flux 14 is applied. Next, as shown in FIG.
3 is lowered from the bottom surface to the position of height h. Height h
Is a height at which the lower end of the solder ball 5 does not come into contact with the bottom surface of the container 13 and is determined by actual trial as a height at which an appropriate amount of flux 14 is transferred to the lower surface of the solder ball 5 It is.
【００１７】次いで、この状態から吸着ツール１０を上
昇させる。すると、容器１３の底面に所定厚さｄで塗布
されたフラックス１４は半田ボール５の下面に転写され
て付着したまま上昇する。このようにして図２（ｂ）に
示すように、半田ボール５の下面にはフラックス１４が
転写により塗布される。Next, the suction tool 10 is raised from this state. Then, the flux 14 applied to the bottom surface of the container 13 with a predetermined thickness d is transferred to the lower surface of the solder ball 5 and rises while adhering. In this way, as shown in FIG. 2B, the flux 14 is applied to the lower surface of the solder ball 5 by transfer.
【００１８】次に半田ボール５の基板上への移載につい
て説明する。図３（ａ）に示すように、基板１１の下面
には電極１２が形成されており、この電極形成面の反対
面上、すなわち基板１１の上面に貫通孔１１ａを介して
半田バンプが形成される。この基板１１上に半田ボール
５を吸着した吸着ツール１０を移動させ、次いで吸着ツ
ール１０を貫通孔１１ａ上に下降させる。次いで半田ボ
ール５の真空吸着を解除して吸着ツール１０が上昇する
ことにより、半田ボール５は基板１１の貫通孔１１ａの
位置に移載される。このとき、図３（ｂ）に示すよう
に、貫通孔１１ａ上の半田ボール５の下端部は、基板１
１の厚みにより電極１２の上面に接触しないが、半田ボ
ール５の下面に塗布されたフラックス１４は電極１２の
表面に接触した状態にある。Next, the transfer of the solder balls 5 onto the substrate will be described. As shown in FIG. 3A, an electrode 12 is formed on the lower surface of the substrate 11, and a solder bump is formed on a surface opposite to the electrode forming surface, that is, on the upper surface of the substrate 11 through a through hole 11a. You. The suction tool 10 holding the solder balls 5 is moved onto the substrate 11, and then the suction tool 10 is lowered onto the through-hole 11a. Next, the vacuum suction of the solder ball 5 is released and the suction tool 10 is raised, so that the solder ball 5 is transferred to the position of the through hole 11 a of the substrate 11. At this time, as shown in FIG. 3B, the lower end of the solder ball 5 on the through hole 11a is
The flux 14 applied to the lower surface of the solder ball 5 is in contact with the surface of the electrode 12 although it does not contact the upper surface of the electrode 12 due to the thickness of 1.
【００１９】次に、半田ボール５が移載された基板１１
をリフロー装置に送り、加熱する。これにより半田ボー
ル５は溶融状態となるが、このときフラックス１４中に
は半田ぬれ性の良い金属粉末が多量に含まれているの
で、溶融半田はこれら金属粉末に導かれて金属粉末の間
を浸潤しながら下方へ移動する。そして溶融半田は電極
１２の表面に到達した後、冷却固化することにより電極
１２の表面に接合される。Next, the substrate 11 on which the solder balls 5 have been transferred
Is sent to a reflow device and heated. As a result, the solder balls 5 are in a molten state. At this time, since the flux 14 contains a large amount of metal powder having good solder wettability, the molten solder is guided by these metal powders to cause a gap between the metal powders. Move downward while infiltrating. Then, after reaching the surface of the electrode 12, the molten solder is cooled and solidified to be joined to the surface of the electrode 12.
【００２０】このときフラックス１４中の成分により、
電極１２の表面の酸化膜が除去されて良好な半田接合が
行われ、図３（ｃ）に示すように電極１２上に貫通孔１
１ａを介して半田バンプ５’が形成される。また、フラ
ックス１４に混合されていた金属粉末は半田バンプ５’
中に含有されるが、これらの金属粉末は導電性のもので
あるため電極１２と半田バンプ５’との導通を阻害する
ことはない。At this time, depending on the components in the flux 14,
The oxide film on the surface of the electrode 12 is removed, and good soldering is performed. As shown in FIG.
A solder bump 5 'is formed via 1a. Further, the metal powder mixed in the flux 14 is replaced with the solder bump 5 ′.
However, since these metal powders are conductive, they do not hinder conduction between the electrodes 12 and the solder bumps 5 '.
【００２１】[0021]
【発明の効果】本発明によれば、半田ボールに導電性の
半田ぬれ性が良い金属粉末を混合したフラックスを塗布
し、この半田ボールを電極形成面の反対側の基板面に搭
載するようにしたので、半田ボールが電極に直接接触し
ていない場合でも、半田ボールの溶融時にはフラックス
中の金属粉末の間を溶融半田が浸潤して電極表面まで導
かれることにより、溶融半田は電極の表面に確実に到達
して接合され、導通不良のない良好な半田バンプを形成
することができる。According to the present invention, a solder ball is coated with a flux mixed with conductive metal powder having good solder wettability, and the solder ball is mounted on the substrate surface opposite to the electrode forming surface. Therefore, even when the solder ball is not in direct contact with the electrode, when the solder ball is melted, the molten solder infiltrates between the metal powders in the flux and is guided to the electrode surface, so that the molten solder remains on the electrode surface. It is possible to form a good solder bump which is reliably reached and joined and has no conduction failure.
【図１】本発明の一実施の形態の半田ボールの移載装置
のフラックス転写部の部分断面図FIG. 1 is a partial cross-sectional view of a flux transfer unit of a solder ball transfer device according to an embodiment of the present invention.
【図２】（ａ）本発明の一実施の形態の半田ボールの移
載装置のフラックス転写部の拡大断面図 （ｂ）本発明の一実施の形態の半田ボールの移載装置の
フラックス転写部の拡大断面図FIG. 2 (a) is an enlarged cross-sectional view of a flux transfer unit of the solder ball transfer device according to one embodiment of the present invention; and (b) a flux transfer unit of the solder ball transfer device according to one embodiment of the present invention. Enlarged sectional view of
【図３】（ａ）本発明の一実施の形態のテープ状の基板
の部分断面図 （ｂ）本発明の一実施の形態のテープ状の基板の部分断
面図 （ｃ）本発明の一実施の形態のテープ状の基板の部分断
面図3A is a partial cross-sectional view of a tape-shaped substrate according to an embodiment of the present invention. FIG. 3B is a partial cross-sectional view of a tape-shaped substrate according to an embodiment of the present invention. Sectional view of a tape-shaped substrate in the form of
【図４】従来のテープ状の基板の部分断面図FIG. 4 is a partial sectional view of a conventional tape-shaped substrate.
１、１１ 基板 ２、１２ 電極 ４、１４ フラックス ５ 半田ボール ６ フラックス転写部 ９ スキージユニット １０ 吸着ツール １０ａ 吸着孔 １１ａ 貫通孔 DESCRIPTION OF SYMBOLS 1, 11 Substrate 2, 12 Electrode 4, 14 Flux 5 Solder ball 6 Flux transfer part 9 Squeegee unit 10 Suction tool 10a Suction hole 11a Through hole
Claims (3)
孔を介して前記電極と導通する半田バンプを形成する半
田バンプの形成方法であって、半田ボールに導電性で半
田ぬれ性の良い金属粉末を混合したフラックスを塗布す
る工程と、前記フラックスが塗布された半田ボールを前
記電極形成面と反対側の基板面に移載する工程と、前記
半田ボールが移載された基板を加熱することによりこの
半田ボールを溶融させて前記電極と半田ボールを前記貫
通孔を介して導通させる工程とを含むことを特徴とする
半田バンプ形成方法。1. A method of forming a solder bump on a surface opposite to an electrode forming surface of a substrate through a through hole of the substrate and forming a solder bump electrically connected to the electrode, the method comprising: Applying a flux mixed with good metal powder, transferring the solder ball coated with the flux to the substrate surface opposite to the electrode forming surface, and removing the substrate on which the solder ball is transferred. Heating the solder ball to melt the solder ball to make the electrode and the solder ball conductive through the through hole.
〜２５μｍの粒径の半田粒であることを特徴とする請求
項１記載の半田バンプ形成方法。2. The method according to claim 1, wherein 80% or more of the total amount of the metal powder is 5%.
2. The method according to claim 1, wherein the solder bumps have a particle size of about 25 [mu] m.
〜１０μｍの粒径の、導電性の半田ぬれ性の良い金属粉
末であることを特徴とする請求項１記載の半田バンプ形
成方法。3. The method according to claim 1, wherein 80% or more of the total amount of the metal powder is 1%.
2. The method for forming a solder bump according to claim 1, wherein the metal powder has a particle diameter of 10 to 10 [mu] m and has good solder wettability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30544897A JP3304854B2 (en) | 1997-11-07 | 1997-11-07 | Solder bump formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30544897A JP3304854B2 (en) | 1997-11-07 | 1997-11-07 | Solder bump formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11145192A true JPH11145192A (en) | 1999-05-28 |
| JP3304854B2 JP3304854B2 (en) | 2002-07-22 |
Family
ID=17945272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30544897A Expired - Fee Related JP3304854B2 (en) | 1997-11-07 | 1997-11-07 | Solder bump formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3304854B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002033417A (en) * | 2000-07-17 | 2002-01-31 | Rohm Co Ltd | Semiconductor device |
| WO2006001402A1 (en) * | 2004-06-24 | 2006-01-05 | Matsushita Electric Industrial Co., Ltd. | Method of soldering electronic component having solder bumps to substrate |
| CN110957394A (en) * | 2019-12-16 | 2020-04-03 | 凡登（江苏）新型材料有限公司 | Manufacturing system and preparation method of segmented photovoltaic ribbon |
-
1997
- 1997-11-07 JP JP30544897A patent/JP3304854B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002033417A (en) * | 2000-07-17 | 2002-01-31 | Rohm Co Ltd | Semiconductor device |
| WO2006001402A1 (en) * | 2004-06-24 | 2006-01-05 | Matsushita Electric Industrial Co., Ltd. | Method of soldering electronic component having solder bumps to substrate |
| EP1705971A3 (en) * | 2004-06-24 | 2006-12-20 | Matsushita Electric Industrial Co., Ltd. | Electronic component disposing device and electronic component disposing method |
| US7568610B2 (en) | 2004-06-24 | 2009-08-04 | Panasonic Corporation | Method of soldering electronic component having solder bumps to substrate |
| CN110957394A (en) * | 2019-12-16 | 2020-04-03 | 凡登（江苏）新型材料有限公司 | Manufacturing system and preparation method of segmented photovoltaic ribbon |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3304854B2 (en) | 2002-07-22 |
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