JPH11135689A - Radiating slug having cavity recess, its forming method, and semiconductor package material using the same - Google Patents

Radiating slug having cavity recess, its forming method, and semiconductor package material using the same

Info

Publication number
JPH11135689A
JPH11135689A JP31597597A JP31597597A JPH11135689A JP H11135689 A JPH11135689 A JP H11135689A JP 31597597 A JP31597597 A JP 31597597A JP 31597597 A JP31597597 A JP 31597597A JP H11135689 A JPH11135689 A JP H11135689A
Authority
JP
Japan
Prior art keywords
cavity
concave portion
slag
recess
flat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31597597A
Other languages
Japanese (ja)
Inventor
Fumitaka Sato
文孝 佐藤
Mamoru Iwamoto
守 岩本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TATSUMI DENKI SEISAKUSYO CO Ltd
Jtekt Column Systems Corp
Original Assignee
TATSUMI DENKI SEISAKUSYO CO Ltd
Fuji Kiko Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TATSUMI DENKI SEISAKUSYO CO Ltd, Fuji Kiko Co Ltd filed Critical TATSUMI DENKI SEISAKUSYO CO Ltd
Priority to JP31597597A priority Critical patent/JPH11135689A/en
Publication of JPH11135689A publication Critical patent/JPH11135689A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body

Abstract

PROBLEM TO BE SOLVED: To provide a radiating slug having a cavity recess in which the rear is flat, the dimensional precision of the depth of the cavity recess is high, and productivity can be improved, and its forming method or the like. SOLUTION: A metal plate 1 is subjected to pressure-shaping divided into a plurality of times by press working, in a state such that the rear face 2 is retained by a flat block. Thereby a cavity recess 3 having a specified depth (m) is formed. A boundary part 8 between a bottom surface 5 and a side surface 6 and a boundary part 9 between the side surface 6 and a surface 7 of recess periphery are formed as rectangular corner angles. The entire rear face 2 is formed flat. After that, the metal plate 1 is cut into segments as radiating slugs. Thus radiating slug S having the cavity recess 3 are formed.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体チップを搭
載するキャビティ凹部をもつ放熱スラグ、その形成方
法、およびそれを用いた半導体パッケージ材料に関する
ものであり、放熱スラグ裏面のフラット化、キャビティ
凹部の深さその他の寸法精度の向上、および生産性アッ
プ等を可能としたものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat dissipation slag having a cavity recess for mounting a semiconductor chip, a method of forming the same, and a semiconductor package material using the same. This makes it possible to improve the depth and other dimensional accuracy and increase productivity.

【0002】[0002]

【従来の技術】半導体パッケージでは、半導体チップか
ら発生する熱を外部へ放出するため、片面に半導体チッ
プに搭載した銅・銅合金あるいはアルミニウムの如き金
属板製の放熱スラグを、他面がモールドから露出するよ
うに設けられているのが一般的である。
2. Description of the Related Art In a semiconductor package, in order to release heat generated from a semiconductor chip to the outside, a heat dissipation slag made of a metal plate such as copper / copper alloy or aluminum mounted on the semiconductor chip is provided on one side and a mold is provided on the other side. Generally, it is provided so as to be exposed.

【0003】この放熱スラグとしては、従来より幾つか
の形状のものがあるが、大別すれば放熱スラグ自体に半
導体チップを係合・搭載可能なキャビティ凹部を有さぬ
ものと、放熱スラグ自体に半導体チップを係合・搭載可
能なキャビティ凹部を有するものとがある。
There are several types of heat dissipation slags. Conventionally, the heat dissipation slag is roughly divided into two types: a heat dissipation slag itself having no cavity recess for engaging and mounting a semiconductor chip, and a heat dissipation slag itself. Some have a cavity recess in which a semiconductor chip can be engaged and mounted.

【0004】前者の放熱スラグは、キャビティ用開口を
もつプリント基板(本件出願内容でいうプリント基板に
はTAB用テープを含むものとする)に、該放熱スラグ
の中央部がキャビティ用開口から露呈するように接合さ
せるもので、キャビティ用開口内に露呈した平面状の放
熱スラグの面に、半導体チップを固着させるようにした
ものである(例えば、特開平4−245668号公報,
同4−245669号公報,同4−313257号公
報,同5−3268号公報,同6−97609号公報,
同6−163760号公報,同6−163763号公報
等参照)。
The former heat dissipation slag is formed on a printed circuit board having a cavity opening (the printed circuit board referred to in the present application includes a TAB tape) so that the central portion of the heat dissipation slug is exposed from the cavity opening. The semiconductor chip is fixed to the surface of the planar heat dissipation slag exposed in the cavity opening (see, for example, JP-A-4-245668,
JP-A-4-245669, JP-A-4-313257, JP-A-5-3268, JP-A-6-97609,
See JP-A-6-163760 and JP-A-6-163376.

【0005】後者の放熱スラグは、キャビティ用開口を
もつプリント基板の裏面に、該放熱スラグ自体のキャビ
ティ凹部をキャビティ用開口から露呈するように接合さ
せるもので、基板のキャビティ用開口から露呈した放熱
スラグのキャビティ凹部の底面に、半導体チップを係合
・搭載させるようにしたものである(例えば、特公昭6
3−54223号公報、特開平9−22964号公報、
本件と同一人の出願に係る特開平9−22962号公報
参照)。
[0005] The heat dissipation slag is formed by joining a cavity recess of the heat dissipation slag itself to the back surface of a printed circuit board having a cavity opening so that the heat dissipation slag itself is exposed from the cavity opening of the board. A semiconductor chip is engaged and mounted on the bottom surface of the cavity recess of the slag (for example, Japanese Patent Publication No. Sho 6
3-54223, JP-A-9-22964,
(See Japanese Patent Application Laid-Open No. 9-22962, filed by the same person as the present application).

【0006】[0006]

【発明が解決しようとする課題】本発明は後者に属し、
放熱スラグ自体に後で半導体チップを係合・搭載可能な
キャビティ凹部が形成されたものである。従来のこの種
の放熱スラグでキャビティ凹部を有するものとしては、
図22で示す如く、金属板1をエッチング加工して、キ
ャビティ凹部となる部分を溶解・除去し、キャビティ凹
部3を形成したものがあり、また図23で示す如く、金
属板1を表面からプレスで加圧して、局部的に表面側か
ら裏面側へ屈曲させ、凹んだ部分をキャビティ凹部3と
したものとがある。
The present invention belongs to the latter,
The heat dissipation slag itself has a cavity recess in which a semiconductor chip can be engaged and mounted later. As this kind of conventional heat dissipation slug with cavity recess,
As shown in FIG. 22, a metal plate 1 is etched to dissolve and remove a portion serving as a cavity concave portion to form a cavity concave portion 3, and as shown in FIG. 23, the metal plate 1 is pressed from the surface. And locally bends from the front side to the back side, and the recessed portion is used as the cavity recess 3.

【0007】しかし、エッチング加工によるキャビティ
凹部3の形成は、キャビティ凹部3の形成に時間がかか
り過ぎると共に、溶解除去のために凹部の深さの精度が
出し難く、深さmにバラツキが生じ易い。そのため、後
にキャビティ凹部3内へ半導体チップ17を係合・搭載
した際に、各個で半導体チップ17の高さが不揃いにな
ってしまい、半導体チップ17とキャビティ凹部3周辺
の表面に接合したプリント基板14の回路端子間のワイ
ヤーボンディングをスムーズに行い難かった。
However, in the formation of the cavity concave portion 3 by the etching process, it takes too much time to form the cavity concave portion 3, and it is difficult to obtain the precision of the depth of the concave portion for dissolution and removal, and the depth m tends to vary. . For this reason, when the semiconductor chip 17 is later engaged and mounted in the cavity recess 3, the height of the semiconductor chip 17 becomes uneven in each case, and the printed circuit board bonded to the surface around the semiconductor chip 17 and the cavity recess 3 is formed. It was difficult to smoothly perform wire bonding between the 14 circuit terminals.

【0008】他方、金属板のプレス加工によるキャビテ
ィ凹部3の形成は、上記特開平9−22962号公報の
記載中に、エッチング加工法とは別に、金属板をプレス
加工することにより、キャビティ凹部を形成した放熱ス
ラグを用いたキャビティ・ダウン・ボール・グリッド・
アレイの実施例が示されている。
On the other hand, the formation of the cavity concave portion 3 by pressing a metal plate is described in Japanese Patent Application Laid-Open No. 9-22962, in which the cavity concave portion is formed by pressing a metal plate separately from the etching method. Cavity down ball grid using the formed heat dissipation slag
An example of an array is shown.

【0009】このキャビティ凹部3の形成は、1回のプ
レス加工により行うため、生産性が良いと共に、キャビ
ティ凹部3の深さの精度が出しやすいから、後に半導体
チップ17を固着した際に、各個で半導体チップ17の
高さが均一になり、ワイヤーボンディング作業をスムー
ズに行える、という利点もある。
Since the cavity recess 3 is formed by one press working, the productivity is good and the accuracy of the depth of the cavity recess 3 is easily obtained. Therefore, there is also an advantage that the height of the semiconductor chip 17 becomes uniform and the wire bonding operation can be performed smoothly.

【0010】しかしこのプレス加工による放熱スラグS
のキャビティ凹部3は、上記の如く金属板1が裏面2
側、即ちキャビティ凹部3の反対面側で膨らんだ形状と
なっている(図23,上記特開平9−22962号公報
の例えば図1を参照)。そのため、該放熱スラグSの裏
面2に更に放熱フィン22を取付けようとしても、当接
面が小さくて上手く取付けることができない、という問
題点がある。
However, the heat release slag S formed by this press working is
As described above, the metal plate 1 is formed on the back surface 2 of the cavity recess 3.
Side, that is, on the side opposite to the cavity concave portion 3 (FIG. 23, see, for example, FIG. 1 of Japanese Patent Application Laid-Open No. 9-22962). For this reason, there is a problem that even if an attempt is made to attach the heat radiation fins 22 to the back surface 2 of the heat radiation slag S, the contact surface is small and the heat radiation fins 22 cannot be attached well.

【0011】さらに、上記エッチング加工法やプレス加
工法で形成された放熱スラグSの各キャビティ凹部3
は、底面5と側面6との境界部8が、溶解除去や屈曲に
より曲面状に形成される(上記図22,図23参照)。
そのため、キャビティ凹部3の底面5に半導体チップ1
7を係合・搭載させるのに必要な平坦面とするには、余
分な間隔t1 の大きさでキャビティ凹部3に形成してお
かねばならない。
Further, each cavity recess 3 of the heat radiation slag S formed by the above-mentioned etching method or press processing method.
The boundary 8 between the bottom surface 5 and the side surface 6 is formed into a curved surface by dissolution removal or bending (see FIGS. 22 and 23 described above).
Therefore, the semiconductor chip 1 is provided on the bottom surface 5 of the cavity recess 3.
In order to make the flat surface necessary for engaging and mounting the groove 7, it is necessary to form the cavity 3 with an extra space t1.

【0012】プレス加工法では更に、キャビティ凹部3
の側面6と凹部周辺の表面7との間の境界部9も曲面状
に形成されるため、凹部3の側面6と凹部周辺の表面7
に接合するプリント基板17との間隔t2 も広くなる。
(上記図23参照)。そのため、後に搭載する半導体チ
ップ17とのボンディングワイヤー18が長くなる、と
いう問題点もあった。
In the press working method, the cavity recess 3
The boundary 9 between the side surface 6 of the concave portion and the surface 7 around the concave portion is also formed in a curved surface, so that the side surface 6 of the concave portion 3 and the surface 7 around the concave portion are formed.
The distance t2 from the printed circuit board 17 to be bonded to the substrate also increases.
(See FIG. 23 above). Therefore, there is also a problem that the bonding wire 18 to be mounted later on the semiconductor chip 17 becomes longer.

【0013】本発明は、従来のキャビティ凹部をもつ放
熱スラグにおいて、上記問題点の解消を課題として創作
されたものである。即ち本発明の目的は、放熱フィンの
取付けが容易に行えること、後にキャビティ凹部に係合
・搭載する半導体チップの高さが均一で、スムーズにワ
イヤーボンディグを行えること、半導体チップとプリン
ト基板の回路端子間のボンディングワイヤーの短縮化を
図れること、かつ生産性を向上することのできるよう
な、キャビティ凹部をもつ放熱スラグ、その形成方法、
およびそれを用いた半導体パッケージ材料を提供するこ
とにある。
The present invention has been made to solve the above problems in a conventional heat dissipation slag having a cavity recess. That is, an object of the present invention is to facilitate the mounting of the radiation fins, to make the height of the semiconductor chip to be later engaged and mounted in the cavity recess uniform, and to perform the wire bonding smoothly, and to realize the semiconductor chip and the printed circuit board. A heat dissipating slag having a cavity concave portion capable of shortening a bonding wire between circuit terminals and improving productivity, a method of forming the same,
And a semiconductor package material using the same.

【0014】[0014]

【課題を解決するための手段】[Means for Solving the Problems]

A 本発明に係るキャビティ凹部をもつ放熱スラグの第
1は、キャビティ凹部3の裏面2全体が、フラットな形
状に加圧形成された構造としたものである。
A A first aspect of the heat dissipation slag having a cavity recess according to the present invention is a structure in which the entire back surface 2 of the cavity recess 3 is formed into a flat shape under pressure.

【0015】B 本発明に係るキャビティ凹部をもつ放
熱スラグの第2は、キャビティ凹部3が、所定深さmを
有し、該キャビティ凹部3の底面5と側面6、側面6と
凹部周辺の表面7との各境界部8,9で直交状の隅角に
加圧形成された構造としたものである。
B The second aspect of the heat dissipation slag having the cavity recess according to the present invention is that the cavity recess 3 has a predetermined depth m, and the bottom surface 5 and the side surface 6 of the cavity recess 3 and the side surface 6 and the surface around the recess. The structure is formed by pressing at the corners orthogonal to each other at the boundary portions 8 and 9 with respect to.

【0016】C 本発明に係るキャビティ凹部をもつ放
熱スラグの第3は、所定深さmのキャビティ凹部3が裏
面2全体でフラットであり、かつ該キャビティ凹部3の
底面2と側面6、側面6と凹部周辺の表面7との各境界
部8,9で直交状の隅角に加圧形成された構造としたも
のである。
C The third aspect of the heat dissipation slag having a cavity recess according to the present invention is that the cavity recess 3 having a predetermined depth m is flat on the entire back surface 2 and the bottom surface 2, the side surface 6, and the side surface 6 of the cavity recess 3. Each of the boundary portions 8 and 9 between the metal and the surface 7 around the concave portion has a structure formed by pressing at orthogonal corners.

【0017】D 本発明に係るキャビティ凹部をもつ放
熱スラグの第4は、キャビティ凹部3が、金属板1の裏
面2を平坦面で支持して複数回に分けて加圧形成された
ことにより、キャビティ凹部3が所定深さmで、裏面2
全体をフラットに形成され、かつキャビティ凹部3の底
面2と側面6、側面6と凹部周辺の表面7との各境界部
8,9で直交状の隅角に形成された構造としたものであ
る。
D The fourth aspect of the heat dissipation slag having the cavity concave portion according to the present invention is that the cavity concave portion 3 is formed by pressing the metal plate 1 a plurality of times while supporting the back surface 2 of the metal plate 1 on a flat surface. The cavity recess 3 has a predetermined depth m and the back surface 2
The entire structure is formed flat and formed at orthogonal corners at boundaries 8 and 9 between the bottom surface 2 and the side surface 6 of the cavity concave portion 3 and the side surface 6 and the surface 7 around the concave portion. .

【0018】E 本発明に係るキャビティ凹部をもつ放
熱スラグの形成方法は、金属板1を、裏面2を平面台盤
4で支持した状態で、プレス加工で複数回に分けて加圧
形成することにより、キャビティ凹部3を所定深さm
で、その底面5と側面6、側面6と凹部周辺の表面7と
の各境界部8,9を直交状の隅角に形成すると共に、裏
面2の全体をフラットに形成するようにし、その後に放
熱スラグSとしての各個片に切断するようにしたもので
ある。
E In the method of forming a heat radiation slag having a cavity concave portion according to the present invention, the metal plate 1 is formed by pressing a plurality of times by press working while the back surface 2 is supported by the flat base 4. As a result, the cavity recess 3 has a predetermined depth m.
Then, the boundaries 8 and 9 between the bottom surface 5 and the side surfaces 6 and the side surfaces 6 and the surface 7 around the concave portion are formed at orthogonal corners, and the entire back surface 2 is formed flat. The heat dissipating slag S is cut into individual pieces.

【0019】F 本発明に係る半導体パッケージ材料
は、所定深さmのキャビティ凹部3が、底面5と側面
6、側面6と凹部周辺の表面7との各境界部8,9で直
交状の隅角に形成され、かつ裏面2の全体がフラットに
形成された構造とした放熱スラグSを、キャビティ用開
口15を有するプリント基板14へ接合した構造とした
ものである。
F In the semiconductor package material according to the present invention, the cavity concave portion 3 having the predetermined depth m is formed by orthogonal corners at the boundaries 8 and 9 between the bottom surface 5 and the side surface 6 and the side surface 6 and the surface 7 around the concave portion. The heat radiation slug S, which is formed at a corner and has a structure in which the entire back surface 2 is flat, is joined to a printed circuit board 14 having a cavity opening 15.

【0020】[0020]

【発明の実施の形態】上記構成において、金属板1と
は、銅板、銅合金あるいはアルミニウムが望ましいが、
熱伝導性がよく塑性加工が可能なものであれば、他の金
属板でもよい。またここでいうプリント基板14には、
硬質で厚みのある一般的なプリント基板に限らず、TA
B用テープをも含むことは上記の通りである。
BEST MODE FOR CARRYING OUT THE INVENTION In the above configuration, the metal plate 1 is preferably a copper plate, a copper alloy or aluminum.
Other metal plates may be used as long as they have good thermal conductivity and can be subjected to plastic working. In addition, the printed circuit board 14 referred to here includes
Not only hard and thick general printed circuit boards, but also TA
As described above, a tape for B is also included.

【0021】上記でキャビティ凹部3を形成するための
金属板1のプレス加工は、金属板1の裏面2を平坦な面
をもつ平面台盤4上に支承した状態で、プレス加工で段
階的に加圧して「つぶしを入れ」ていく。即ち、一度の
加圧ではなく複数回に分けての加圧形成で、凹部3aを
徐々に深くして行き、所定深さmのキャビティ凹部3を
形成するようにする。
The pressing of the metal plate 1 for forming the cavity recesses 3 is carried out stepwise by pressing in a state where the back surface 2 of the metal plate 1 is supported on a flat base 4 having a flat surface. Pressing and "putting in". That is, the concave portion 3a is gradually deepened not by a single pressurization but by a plurality of pressurizations, so that the cavity concave portion 3 having a predetermined depth m is formed.

【0022】上記構造に形成された放熱スラグSに対し
ては、その全面にまたは少なくともその裏面2に、酸化
防止用メッキ10を施しておくことが望ましい(図16
・図17参照)。その酸化防止用メッキ10としては例
えばニッケルメッキが望ましいが、それに限るものでは
ない。
The heat dissipation slag S formed in the above structure is desirably coated on the entire surface or at least on the back surface 2 with an antioxidant plating 10 (FIG. 16).
・ See FIG. 17). As the antioxidant plating 10, for example, nickel plating is desirable, but not limited thereto.

【0023】また上記の放熱スラグSには、凹部周辺の
表面7で必要箇所に、ワイヤーボンディングが可能な部
分メッキ11を施しておくことが望ましい(図18参
照)。この部分メッキ11は、例えば銀メッキが望まし
いが、それに限らずニッケル−金メッキその他のもので
もよい。この部分メッキ11を施すものでは、上記酸化
防止用メッキ10は放熱スラグSの裏面2だけに施して
おくのがよい(図19参照)。
It is desirable that the heat dissipation slag S be provided with a partial plating 11 which can be wire-bonded at a necessary portion on the surface 7 around the concave portion (see FIG. 18). The partial plating 11 is desirably silver plating, for example, but is not limited thereto, and may be nickel-gold plating or the like. In the case where the partial plating 11 is applied, the oxidation preventing plating 10 is preferably applied only to the back surface 2 of the heat radiation slag S (see FIG. 19).

【0024】さらに上記放熱スラグSには、裏面2を除
きキャビティ凹部3内を含む全体面に、または裏面2と
ワイヤーボンディングが可能な部分メッキ11を施した
部分を除く全体面に、粗化処理面12を形成しておくこ
とが望ましい(図20・図21参照)。この粗化処理面
12としては、例えば黒色酸化が望ましいが、それに限
るものではないし、その厚みは1〜3μm程度にしてお
くのが望ましい。
Further, the heat radiating slag S is subjected to a roughening treatment on the entire surface including the inside of the cavity concave portion 3 except for the back surface 2 or on the entire surface except for the portion on which the partial plating 11 capable of performing wire bonding with the back surface 2 is applied. It is desirable to form the surface 12 (see FIGS. 20 and 21). The roughened surface 12 is preferably, for example, black oxide, but is not limited thereto, and its thickness is desirably about 1 to 3 μm.

【0025】上記半導体パッケージ材料16とは、上記
構造を持ち個片に切断した後の放熱スラグSを、キャビ
ティ用開口15をもつプリント基板14へ接合した状態
のものを指している(図1・図2参照)。この場合、半
導体チップ17が未実装の状態で出荷され、該半導体パ
ッケージ材料16の需要者が、所望の半導体チップ17
をキャビティ凹部3へ係合・搭載し、プリント基板14
の回路端子との間をワイヤーボンディングし、樹脂モー
ルド19で封止して半導体パッケージ20とする。後
は、該半導体パッケージ20を半田ボールにてマザーボ
ード21へ接続すればよい(図3参照)。
The semiconductor package material 16 refers to a state in which the heat-dissipating slag S having the above structure and cut into pieces is joined to the printed circuit board 14 having the cavity opening 15 (FIG. 1). (See FIG. 2). In this case, the semiconductor chip 17 is shipped without being mounted, and the demand for the semiconductor package material 16 is
Into the cavity 3 and mount the printed circuit board 14
The semiconductor package 20 is formed by wire bonding with the circuit terminals of the above and sealing with a resin mold 19. Thereafter, the semiconductor package 20 may be connected to the motherboard 21 by solder balls (see FIG. 3).

【0026】上記本発明に係る放熱スラグSにおいて
は、そのキャビティ凹部3を形成する際に、金属板1を
平坦な平面台盤4上に支承した状態で、プレス加工によ
り段階的に「つぶしを入れ」ている。即ち、金属板1を
一度の加圧ではなく数回に分けて加圧形成することによ
り、金属板1の表面7に凹部3aを徐々に深く形成して
いき、所定深さmのキャビティ凹部3を形成するように
している。
In the heat dissipating slag S according to the present invention, when forming the cavity recess 3, the metal plate 1 is supported on a flat flat base plate 4, and the crushing is performed stepwise by pressing. Put in. " That is, by forming the metal plate 1 by pressing several times instead of pressing once, the concave portion 3a is gradually formed deeply on the surface 7 of the metal plate 1, and the cavity concave portion 3 having a predetermined depth m is formed. Is formed.

【0027】そのため、該キャビティ凹部3の形成工程
では、従来のエッチング加工法に比べれば、キャビティ
凹部3の形成が短時間で行なわれる。また、金属板1の
材質やキャビティ凹部3の広さ等に応じて、プレス加工
の1回の加圧力や加圧回数を適切に設定することによ
り、所定深さmのキャビティ凹部3が精度良く形成され
ることになる。
For this reason, in the step of forming the cavity concave portion 3, the formation of the cavity concave portion 3 is performed in a shorter time than in the conventional etching method. In addition, by appropriately setting one pressing force and the number of pressurizations according to the material of the metal plate 1 and the width of the cavity concave portion 3, the cavity concave portion 3 having a predetermined depth m can be accurately formed. Will be formed.

【0028】これにより、キャビティ凹部3をもつ放熱
スラグSの生産性が向上するとともに、後で所定深さm
のキャビティ凹部3内へ半導体チップ17を係合・搭載
した際に、半導体チップ17の高さが不揃いにならず、
凹部周辺の表面7に接合したプリント基板14の回路端
子とのワイヤーボンディングがスムーズに行えるように
なる。
As a result, the productivity of the heat dissipating slag S having the cavity concave portion 3 is improved, and a predetermined depth m
When the semiconductor chip 17 is engaged and mounted in the cavity concave portion 3, the height of the semiconductor chip 17 does not become uneven,
Wire bonding with the circuit terminals of the printed circuit board 14 joined to the surface 7 around the concave portion can be smoothly performed.

【0029】またこの放熱スラグSは、従来のプレス加
工法によるものとも異なり、金属板1の裏面2を平坦な
平面台盤4で支承しながら、金属板1の表面7から一回
だけの加圧ではなく、数回に分けて加圧形成し徐々に凹
まして、深く凹部3aを形成している。これで、金属板
1の凹んだ分の肉は徐々に凹部3aの周辺へ移動してい
くので、金属板1はキャビティ凹部3の裏側が膨らんだ
りすることなく、裏面2の全体がフラットな放熱スラグ
Sが形成されることになる。そのため、該放熱スラグS
は広く平坦な裏面2を有することになり、放熱フィン2
2を確実に装着することができ、放熱作用をより一層高
められる(上記図3参照)。
The radiating slag S is different from that obtained by the conventional press working method in that the back surface 2 of the metal plate 1 is supported by the flat flat base plate 4 while being applied only once from the front surface 7 of the metal plate 1. Instead of the pressure, the pressure is formed several times and is gradually depressed to form a deep recess 3a. As a result, the concave portion of the metal plate 1 gradually moves to the periphery of the concave portion 3a, so that the metal plate 1 does not swell on the back side of the cavity concave portion 3 and the entire back surface 2 has a flat heat radiation. Slag S will be formed. Therefore, the heat release slag S
Has a wide and flat back surface 2 and the radiation fins 2
2 can be securely mounted, and the heat radiation effect can be further enhanced (see FIG. 3).

【0030】さらにこの放熱スラグSは、従来のエッチ
ング加工法やプレス加工法によるものと異なり、キャビ
ティ凹部3の形状が底面5と側面6との境界部8や、側
面6と凹部周辺の表面7との境界部9が直角状の隅角に
形成され、従来のような曲面状の境界部にならない(図
9・図10参照)。
Further, the heat dissipating slag S is different from those formed by the conventional etching method and pressing method in that the shape of the cavity concave portion 3 is changed to the boundary portion 8 between the bottom surface 5 and the side surface 6 and the side surface 6 and the surface 7 around the concave portion. Is formed at a right-angled corner, and does not become a curved boundary as in the related art (see FIGS. 9 and 10).

【0031】これにより、該キャビティ凹部3の大きさ
は、半導体チップ17を係合・搭載するのに必要な平坦
な底面5が、必要かつ充分な大きさのものに形成でき
て、従来のものと異なり、必要な平坦面を得るためキャ
ビティ凹部を余分な大きさに形成する必要が無くなる。
同様に、プリント基板14を接合する凹部周辺の表面7
も、従来の側面と凹部周辺の表面との境界部が曲面状の
ものと異なり、キャビティ凹部3の側面6から直角状で
直ちに連続して形成されており、離れていない。そのた
め、後に搭載する半導体チップ17とプリント基板14
の回路端子間を繋ぐボンディングでワイヤー18も、最
短のもので済むことになる(上記図1・図2参照)。
As a result, the size of the cavity recess 3 is such that the flat bottom surface 5 necessary for engaging and mounting the semiconductor chip 17 can be formed to have a necessary and sufficient size. Unlike this, it is not necessary to form the cavity concave portion in an extra size to obtain a required flat surface.
Similarly, the surface 7 around the concave portion for joining the printed circuit board 14
Also, unlike the conventional one in which the boundary between the side surface and the surface around the concave portion is a curved surface, the boundary is formed immediately and immediately continuously from the side surface 6 of the cavity concave portion 3 and is not separated. Therefore, the semiconductor chip 17 to be mounted later and the printed circuit board 14
The shortest wire 18 is also required by bonding between the circuit terminals (see FIGS. 1 and 2).

【0032】なお、上記のキャビティ凹部3を形成時
に、仮に金属板1の種類による塑性の差や加圧力の誤差
等により、裏面1へ僅かでも膨らむことが有る場合に
は、その膨らんだ部分を研削加工で面仕上げするだけで
足りる。図において、13はプレス機の押金型を示す。
When the cavity 3 is formed, if there is any possibility that the cavity 3 may swell to the rear surface 1 due to a difference in plasticity due to the type of the metal plate 1 or an error in the pressing force, the swelling portion is removed. It is enough to finish the surface by grinding. In the figure, reference numeral 13 denotes a pressing die of a press machine.

【0033】[0033]

【実施例】本発明に係る放熱スラグSを形成する一実施
例として、ここでは金属板に厚みが0.8mmの銅板1
を用い、これに一辺が14.0mmの正方形状で、深さ
が0.46mmのキャビティ凹部3を形成する場合を示
す。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As an embodiment for forming a heat radiation slag S according to the present invention, here, a copper plate 1 having a thickness of 0.8 mm is formed on a metal plate.
This shows a case where a cavity recess 3 having a square shape with a side of 14.0 mm and a depth of 0.46 mm is formed.

【0034】上記銅板1としては、後で個片に切断して
複数個の放熱スラグSが得られる長さをもつ横長状のも
のを用いている。この銅板1を、平坦面の平面台盤4上
に載置しておき、後に各個片となる部分の中央部を、各
段階毎に異なる形状の押金型13を用い、プレス機で加
圧して「つぶしを入れ」ていく。
As the copper plate 1, a horizontally long one having a length that can be cut into individual pieces to obtain a plurality of heat dissipation slags S is used. The copper plate 1 is placed on a flat base platen 4 having a flat surface, and the central portion of a part to be later formed into individual pieces is pressed by a press using a press die 13 having a different shape for each stage. "Put in".

【0035】このプレス機による金属板1の加圧は、キ
ャビティ凹部の形成を1回だけの加圧で所定の大きさ・
深さにするのではなく、数回に分けて行う。ここでは、
プレス能力250tのプレス機を用いて、5回に分けて
の加圧を行っている。
The pressing of the metal plate 1 by this press machine is performed only once by pressing the metal plate 1 to a predetermined size.
Do this in several steps instead of deepening. here,
Pressing is performed five times using a press machine with a pressing capacity of 250 t.

【0036】即ち、第1段階では、下端部が半球状の押
金型13を用いて金属板1の表面7を加圧することによ
り、浅い半球殻状で約0.3mmの深さの凹部3aが形
成される(図4・図11参照)。
That is, in the first stage, the surface 7 of the metal plate 1 is pressurized by using a pressing die 13 having a hemispherical lower end, thereby forming a concave portion 3a having a shallow hemispherical shell shape and a depth of about 0.3 mm. It is formed (see FIGS. 4 and 11).

【0037】第2段階では、同じ箇所を、下端部がやや
偏平状の半球状の押金型13を用いて加圧することによ
り、底面5がやや偏平状となった浅い半球殻状で約0.
35mmの深さの凹部3aが形成される(図5・図12
参照)。
In the second stage, the same portion is pressed by using a hemispherical pressing mold 13 having a slightly flat lower end, so that the bottom surface 5 has a slightly flattened shape with a shallow hemispherical shell having a flat shape.
A concave portion 3a having a depth of 35 mm is formed.
reference).

【0038】第3段階では、同じ箇所を、下端部が4隅
を除き4側面状となり、かつ下端面を平面状とした押金
型13を用いて加圧することにより、底面5が平面状で
深さ約0.4mmの凹部3aが形成される(図6・図1
3参照)。
In the third stage, the same portion is pressed with a pressing die 13 having a lower end portion having four side surfaces except for four corners and a lower end surface being flat, so that the bottom surface 5 is flat and deep. A recess 3a having a thickness of about 0.4 mm is formed.
3).

【0039】第4段階では、同じ箇所を、下端部がほぼ
4側面を有し、下端面を平面状とした押金型13を用い
て加圧することにより、底面5が平面状で深さ約0.4
2mmの凹部3aが形成される(図7・図14参照)。
In the fourth stage, the same portion is pressed by using a pressing die 13 having a lower end portion having approximately four side surfaces and a flat lower end surface, so that the bottom surface 5 is flat and has a depth of about 0. .4
A recess 3a of 2 mm is formed (see FIGS. 7 and 14).

【0040】そして第5段階では、同じ箇所を、下端部
が一辺1.4mmの正方形で、四側面を有し、下端面を
平面とした押金型13を用いて加圧する。これにより、
一辺が1.4mmの正方形で、四側面を有し、深さが
0.46mmの平面な底面5をもつ凹部3aが形成され
る(図8・図15参照)。
In the fifth stage, the same portion is pressed by using a pressing die 13 having a square lower end of 1.4 mm on a side, four sides, and a flat lower end. This allows
A recess 3a having a square bottom of 1.4 mm, four sides, and a flat bottom surface 5 having a depth of 0.46 mm is formed (see FIGS. 8 and 15).

【0041】上記の場合に、銅板1は平坦な平面台盤4
上に載置して加圧し、段階的に「つぶしを入れ」て凹ま
されるので、凹んだ部分の肉は凹部3aの周辺へ移動し
ており、凹部3aの裏面2が膨らむことがない(図9参
照)。
In the above case, the copper plate 1 is a flat flat base 4
It is placed on top and pressurized, and it is recessed by "putting in" step by step, so that the flesh of the recessed portion moves to the periphery of the recess 3a, and the back surface 2 of the recess 3a does not swell (FIG. 9).

【0042】その後は、基準孔あけをすると共に、必要
な大きさの個片にカットして、各個の放熱スラグSとす
ればよい。これにより、銅板1の所定位置に、所定深さ
のキャビティ凹部3が、迅速かつ精度良く形成されると
共に、裏面2全体がフラットな放熱スラグSが形成され
ることになる(図10参照)。
Thereafter, a reference hole is drilled and cut into individual pieces of a required size to form individual heat radiation slags S. As a result, the cavity recess 3 having a predetermined depth is formed quickly and accurately at a predetermined position of the copper plate 1, and a heat radiation slag S having a flat back surface 2 as a whole is formed (see FIG. 10).

【0043】また、上記で形成されたキャビティ凹部3
の底面5と側面6との境界部8、側面6と凹部周辺の表
面7との境界部9は、各々直角状の隅角に形成されてい
るので(上記図10参照)、該キャビティ凹部3の底面
5は後に半導体チップ17を係合・搭載するのに必要か
つ充分な大きさの平坦面が確保されるし、半導体チップ
17と凹部周辺の表面7に接合するプリント基板14の
回路端子間のボンディングワイヤー18も、最短の長さ
で良いことになる(上記図1・図2参照)。
The cavity recess 3 formed as described above
Since the boundary 8 between the bottom surface 5 and the side surface 6 and the boundary 9 between the side surface 6 and the surface 7 around the recess are formed at right angles (see FIG. 10), the cavity recess 3 is formed. The bottom surface 5 has a flat surface large enough to engage and mount the semiconductor chip 17 later, and between the semiconductor terminal 17 and the circuit terminals of the printed circuit board 14 joined to the surface 7 around the concave portion. The bonding wire 18 may have the shortest length (see FIGS. 1 and 2).

【0044】上記におけるプレス機による加圧力や加圧
の回数等は、上記に限られるものではなく、加圧される
金属板1の材質や厚み、あるいは形成しようとするキャ
ビティ凹部3の一辺の寸法や深さm等を考慮して、最適
な数値を設定して加工すればよい。
The pressing force and the number of times of pressurization by the press machine described above are not limited to the above, but the material and thickness of the metal plate 1 to be pressurized, or the dimension of one side of the cavity concave portion 3 to be formed. An optimum numerical value may be set in consideration of the depth and the depth m, etc.

【0045】上記で形成した放熱スラグSには、ここで
はフラットな裏面2にニッケルの酸化防止メッキ10を
施し、また凹部周辺の表面7で必要箇所にワイヤーボン
ディングが可能な銀の部分メッキ11を施し、かつ上記
部分メッキ11の箇所を除いて、表面7と各側端面には
厚さ2μmで黒色酸化の粗化処理面12に形成してある
(図21参照)。
The heat dissipating slag S formed as described above is provided with a nickel antioxidant plating 10 on the flat back surface 2 and a silver partial plating 11 which can be wire-bonded to a required portion on the surface 7 around the concave portion. Except for the portion of the partial plating 11, the surface 7 and each side end surface are formed on the roughened surface 12 of 2 μm in thickness and black oxide (see FIG. 21).

【0046】なおこの放熱スラグSは、その後にキャビ
ティ用開口15をもつプリント基板14に接着剤23で
接合して、半導体パッケージ材料16とされる(上記図
1・図2参照)。通常は上記の如く、該半導体パッケー
ジ材料16を半導体チップ17が未搭載の状態で出荷
し、該半導体パッケージ材料16の需要者が所望の半導
体チップ17をキャビティ凹部3へ係合・搭載し、プリ
ント基板14の回路端子との間でワイヤーボンディング
し、樹脂モールド19して封止し半導体パッケージ20
とする(図3参照)。後は、該半導体パッケージ20を
半田ボールにてマザーボード21へ接続されている(上
記図3参照)。
The heat dissipating slag S is thereafter joined to the printed circuit board 14 having the cavity opening 15 with an adhesive 23 to form a semiconductor package material 16 (see FIGS. 1 and 2). Usually, as described above, the semiconductor package material 16 is shipped in a state where the semiconductor chip 17 is not mounted, and a consumer of the semiconductor package material 16 engages and mounts a desired semiconductor chip 17 in the cavity recess 3 and prints. The semiconductor package 20 is wire-bonded to the circuit terminals of the substrate 14 and sealed with a resin mold 19.
(See FIG. 3). Thereafter, the semiconductor package 20 is connected to the motherboard 21 by solder balls (see FIG. 3).

【0047】[0047]

【発明の効果】上記で明らかな如く、本発明に係るキャ
ビティ凹部をもつ放熱スラグ、その製造方法、および該
放熱スラグをプリント基板に接合した半導体パケージ材
料は、次のような効果を奏する。
As is apparent from the above description, the heat dissipation slag having the cavity recess according to the present invention, the method of manufacturing the same, and the semiconductor package material in which the heat dissipation slag is joined to the printed circuit board have the following effects.

【0048】即ち本発明では、放熱スラグのキャビティ
凹部の形成は、金属板を平坦な平面台盤で支承させ、プ
レス加工で複数回の加圧をして段階的に「つぶしを入
れ」ることにより、所定深さのキャビティ凹部になるよ
うに形成している。
That is, according to the present invention, the cavity recess of the heat radiation slag is formed by supporting a metal plate on a flat flat base plate and applying a plurality of pressurizations by press working to “squeeze” step by step. Accordingly, the cavity is formed to have a predetermined depth.

【0049】そのため、従来のエッチング加工法による
ものに比べて、キャビティ凹部の形成を短時間で行え
て、生産性の向上とコストダウンを図ることができると
共に、形成されるキャビティ凹部は深さの精度を上げる
ことができる。これにより、後にキャビティ凹部へ半導
体チップを係合・搭載した際に、各々が高さが均一にな
るから、半導体チップとプリント基板の回路端子間のワ
イヤーボンディング作業を、容易かつスムーズに行なう
ことができる。
Therefore, as compared with the conventional etching method, the cavity recess can be formed in a shorter time, thereby improving the productivity and reducing the cost. Accuracy can be increased. As a result, when the semiconductor chips are later engaged and mounted in the cavity recesses, the heights thereof become uniform, so that the wire bonding operation between the semiconductor chips and the circuit terminals of the printed circuit board can be easily and smoothly performed. it can.

【0050】また、従来のプレス加工法によるものと異
なり、金属板を加圧してキャビティ凹部を形成しても、
裏面側へ曲がったり膨らんだりすることがない。これ
で、この放熱スラグは、裏面全体がフラットになるか
ら、該裏面に放熱フィンを容易かつ確実に装着すること
ができ、より一層の放熱効果を上げることができる。
Further, unlike the conventional press working method, even if the cavity is formed by pressing the metal plate,
It does not bend or bulge to the back side. Thus, since the heat dissipation slag is flat on the entire back surface, the heat dissipation fins can be easily and reliably attached to the back surface, and the heat dissipation effect can be further improved.

【0051】さらに、従来のエッチング法や従来のプレ
ス加工法と異なり、キャビティ凹部の底面と側面、側面
と凹部周辺の表面との各境界部を、いずれも直角状の隅
角に形成できる。その結果、該キャビティ凹部は半導体
チップを係合・搭載するのに必要かつ充分な大きさの平
坦な底面に形成でき、余分な大きさに形成する必要が無
くなる。
Further, unlike the conventional etching method and the conventional press working method, each boundary portion between the bottom surface and the side surface of the cavity concave portion and the side surface and the surface around the concave portion can be formed at right-angled corners. As a result, the cavity concave portion can be formed on a flat bottom surface which is necessary and sufficient in size for engaging and mounting the semiconductor chip, and does not need to be formed in an extra size.

【0052】しかもキャビティ凹部周辺の表面のプリン
ト基板の回路端子の位置も、キャビティ凹部から近い位
置になっているので、半導体チップとプリント基板の回
路端子間のボンディングワイヤーも、最短の長さで良い
ことになる。
Moreover, the positions of the circuit terminals of the printed circuit board on the surface around the cavity recesses are also close to the cavity recesses, so that the bonding wires between the semiconductor chip and the circuit terminals of the printed circuit board also need to have the shortest length. Will be.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係るキャビティ凹部をもつ放熱スラグ
を用いた半導体パッケージ材料の実施例を示す拡大縦断
側面図である。
FIG. 1 is an enlarged vertical sectional side view showing an embodiment of a semiconductor package material using a heat dissipation slag having a cavity concave portion according to the present invention.

【図2】本発明に係るキャビティ凹部をもつ放熱スラグ
を用いた半導体パッケージ材料の他の実施例を示す拡大
縦断側面図である。
FIG. 2 is an enlarged vertical sectional side view showing another embodiment of a semiconductor package material using a heat dissipation slag having a cavity concave portion according to the present invention.

【図3】図1で示したパッケージ材料を用いた半導体パ
ッケージをマザーボードへ接合した状態を示す拡大縦断
側面図である。
FIG. 3 is an enlarged vertical sectional side view showing a state where a semiconductor package using the package material shown in FIG. 1 is joined to a motherboard.

【図4】本発明に係るキャビティ凹部をもつ放熱スラグ
の形成方法で、第1段階の加圧状態を示す拡大縦断側面
図である。
FIG. 4 is an enlarged vertical cross-sectional side view showing a first-stage pressurized state in the method of forming a heat dissipation slag having a cavity recess according to the present invention.

【図5】本発明に係るキャビティ凹部をもつ放熱スラグ
の形成方法で、第2段階の加圧状態を示す拡大縦断側面
図である。
FIG. 5 is an enlarged vertical sectional side view showing a second-stage pressurized state in the method of forming a heat-dissipating slag having a cavity concave portion according to the present invention.

【図6】本発明に係るキャビティ凹部をもつ放熱スラグ
の形成方法で、第3段階の加圧状態を示す拡大縦断側面
図である。
FIG. 6 is an enlarged vertical sectional side view showing a third-stage pressurized state in the method for forming a heat dissipation slag having a cavity concave portion according to the present invention.

【図7】本発明に係るキャビティ凹部をもつ放熱スラグ
の形成方法で、第4段階の加圧状態示す拡大縦断側面図
である。
FIG. 7 is an enlarged vertical sectional side view showing a fourth stage pressurized state in the method of forming a heat dissipation slag having a cavity concave portion according to the present invention.

【図8】本発明に係るキャビティ凹部をもつ放熱スラグ
の形成方法で、第5段階の加圧状態を示す拡大縦断側面
図である。
FIG. 8 is an enlarged vertical cross-sectional side view showing a fifth-stage pressurized state in the method for forming a heat dissipation slag having a cavity recess according to the present invention.

【図9】本発明に係るキャビティ凹部をもつ放熱スラグ
の形成方法で、第5段階の加圧終了後の状態を示す拡大
縦断側面図である。
FIG. 9 is an enlarged vertical sectional side view showing a state after completion of the fifth stage pressurization in the method for forming a heat dissipation slag having a cavity recess according to the present invention.

【図10】本発明に係るキャビティ凹部をもつ放熱スラ
グの形成方法で、個片にカット後の放熱スラグを示す拡
大縦断側面図である。
FIG. 10 is an enlarged longitudinal sectional side view showing the heat dissipation slag after being cut into individual pieces in the method for forming a heat dissipation slag having a cavity concave portion according to the present invention.

【図11】上記図4で示した第1段階の加圧で形成され
た凹部の平面図である。
FIG. 11 is a plan view of a recess formed by the first-stage pressing shown in FIG. 4;

【図12】上記図5で示した第2段階の加圧で形成され
た凹部の平面図である。
FIG. 12 is a plan view of a concave portion formed by the second-stage pressing shown in FIG. 5;

【図13】上記図6で示した第3段階の加圧で形成され
た凹部の平面図である。
FIG. 13 is a plan view of a concave portion formed by the third-stage pressing shown in FIG. 6;

【図14】上記図7で示した第4段階の加圧で形成され
た凹部の平面図である。
FIG. 14 is a plan view of a concave portion formed by the fourth stage pressing shown in FIG. 7;

【図15】上記図8で示した第5段階の加圧で形成され
た凹部の平面図である。
FIG. 15 is a plan view of a concave portion formed by the fifth stage pressing shown in FIG. 8;

【図16】図10で示した放熱スラグの全面に酸化防止
用メッキを施した状態の拡大縦断側面図である。
FIG. 16 is an enlarged vertical sectional side view showing a state in which oxidation preventing plating is applied to the entire surface of the heat dissipation slag shown in FIG. 10;

【図17】図10で示した放熱スラグの裏面にだけ酸化
防止用メッキを施した状態の拡大縦断側面図である。
FIG. 17 is an enlarged vertical sectional side view showing a state in which oxidation preventing plating is applied only to the rear surface of the heat dissipation slag shown in FIG.

【図18】図10で示した放熱スラグの表面の必要箇所
にワイヤーボンディング可能な部分メッキを施した状態
の拡大縦断側面図である。
18 is an enlarged vertical cross-sectional side view showing a state where a required portion of the surface of the heat radiation slag shown in FIG.

【図19】図10で示した放熱スラグの表面の必要箇所
にワイヤーボンディング可能な部分メッキを施し、裏面
にだけ酸化防止用メッキを施した状態の拡大縦断側面図
である。
19 is an enlarged vertical cross-sectional side view showing a state in which a required portion of the surface of the heat dissipation slag shown in FIG.

【図20】図10で示した放熱スラグの裏面に酸化防止
用メッキを施し、残る全面を粗化処理面とした状態の拡
大縦断側面図である。
FIG. 20 is an enlarged vertical sectional side view showing a state where an antioxidant plating is applied to the back surface of the heat radiation slag shown in FIG. 10 and the remaining entire surface is a roughened surface.

【図21】図10で示した放熱スラグの裏面に酸化防止
用メッキを施し、表面の必要箇所にワイヤーボンディン
グ可能な部分メッキを施し、それ以外の全面を粗化処理
面とした状態の拡大縦断側面図である。
FIG. 21 is an enlarged vertical cross-sectional view showing a state where the back surface of the heat radiation slag shown in FIG. 10 is plated for antioxidation, the required portion of the surface is partially plated for wire bonding, and the other surface is roughened. It is a side view.

【図22】従来のエッチング加工法でキャビティ凹部を
形成した放熱スラグを用いた半導体パッケージの拡大縦
断側面図である。
FIG. 22 is an enlarged vertical sectional side view of a semiconductor package using a heat dissipating slag having a cavity recess formed by a conventional etching method.

【図23】従来のプレス加工法でキャビティ凹部を形成
した放熱スラグを用いた半導体パッケージの拡大縦断側
面図である。
FIG. 23 is an enlarged vertical sectional side view of a semiconductor package using a heat dissipating slag having a cavity recess formed by a conventional press working method.

【符号の説明】[Explanation of symbols]

S−放熱スラグ 13−押金型 1−金属板 14−プリント基板 2−裏面 15−キャビティ用開口 3−キャビティ凹部 16−半導体パッケージ材
料 3a−凹部 17−半導体チップ 4−平面台盤 18−ボンディングワイヤ
ー 5−底面 19−樹脂モールド 6−側面 20−半導体パッケージ 7−表面 21−マザーボード 8−境界部 22−放熱フィン 9−境界部 23−接着剤 10−酸化防止用メッキ m−深さ 11−部分メッキ t1 −間隔 12−粗化処理面 t2 −間隔
S-radiation slag 13-pressing die 1-metal plate 14-printed board 2-back surface 15-cavity opening 3-cavity recess 16-semiconductor package material 3a-recess 17-semiconductor chip 4-plane base 18-bonding wire 5 -Bottom surface 19-Resin mold 6-Side surface 20-Semiconductor package 7-Surface 21-Motherboard 8-Boundary part 22-Radiation fin 9-Boundary part 23-Adhesive 10-Antioxidant plating m-Depth 11-Partial plating t1 -Interval 12-Roughened surface t2-Interval

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】キャビティ凹部3の裏面2全体が、フラッ
トな形状に加圧形成された構造であることを特徴とす
る、キャビティ凹部をもつ放熱スラグ。
1. A heat dissipating slag having a cavity concave portion, wherein the entire back surface 2 of the cavity concave portion 3 has a structure pressed and formed into a flat shape.
【請求項2】キャビティ凹部3が、所定深さmを有し、
該キャビティ凹部3の底面5と側面6、側面6と凹部周
辺の表面7との各境界部8,9で直交状の隅角に加圧形
成された構造であることを特徴とする、キャビティ凹部
をもつ放熱スラグ。
2. The cavity recess 3 has a predetermined depth m,
A cavity recess formed by press-forming at orthogonal corners at respective boundaries 8, 9 between a bottom surface 5 and a side surface 6 of the cavity recess 3 and a side surface 6 and a surface 7 around the recess. Heat dissipation slag with.
【請求項3】所定深さmのキャビティ凹部3が裏面2全
体でフラットであり、かつ該キャビティ凹部3の底面2
と側面6、側面6と凹部周辺の表面7との各境界部8,
9で直交状の隅角に加圧形成された構造であることを特
徴とする、キャビティ凹部をもつ放熱スラグ。
3. A cavity recess 3 having a predetermined depth m is flat on the entire back surface 2, and a bottom surface 2 of the cavity recess 3 is provided.
, Each boundary portion 8 between the side surface 6 and the side surface 6 and the surface 7 around the concave portion,
9. A heat dissipating slag having a cavity recessed portion, wherein the heat dissipating slag has a structure formed by pressing at orthogonal corners in 9.
【請求項4】キャビティ凹部3が、金属板1の裏面2を
平坦面で支持して複数回に分けて加圧形成されたことに
より、キャビティ凹部3が所定深さmで、裏面2全体を
フラットに形成され、かつキャビティ凹部3の底面2と
側面6、側面6と凹部周辺の表面7との各境界部8,9
で直交状の隅角に形成された構造であることを特徴とす
る、キャビティ凹部をもつ放熱スラグ。
4. The cavity recessed portion 3 is formed by pressing a plurality of times while supporting the back surface 2 of the metal plate 1 on a flat surface, so that the cavity recessed portion 3 has a predetermined depth m and the entire back surface 2 is formed. Each boundary portion 8, 9 between the bottom surface 2 and the side surface 6 of the cavity concave portion 3 and the side surface 6 and the peripheral surface 7 around the concave portion.
A heat dissipating slag having a cavity concave portion, wherein the heat dissipating slag has a structure formed at orthogonal corners.
【請求項5】少なくともフラットな裏面2にだけ、酸化
防止用メッキ10を施した、請求項1,2,3または4
に記載のキャビティ凹部をもつ放熱スラグ。
5. The antioxidant plating 10 is applied only to at least the flat back surface 2.
A heat dissipating slag having a cavity recess according to claim 1.
【請求項6】キャビティ凹部3の周辺の表面7に、ワイ
ヤーボンディングが可能な部分メッキ11を施した、請
求項1,2,3,4または5に記載のキャビティ凹部を
もつ放熱スラグ。
6. A heat dissipating slag having a cavity recess according to claim 1, wherein the surface 7 around the cavity recess 3 is provided with a partial plating 11 capable of wire bonding.
【請求項7】キャビティ凹部3内を含む表面7および側
端面を、粗化処理面12とした、請求項1,2,3,4
または5に記載のキャビティ凹部をもつ放熱スラグ。
7. A roughened surface 12 including a surface 7 including the inside of the cavity concave portion 3 and a side end surface.
Or a heat-dissipating slag having the cavity concave portion according to 5.
【請求項8】キャビティ凹部3の周辺の表面7に施され
たワイヤーボンディングが可能な部分メッキ11の箇所
を除き、キャビティ凹部3内を含む表面7および側端面
を粗化処理面12とした、請求項1,2,3,4または
5に記載のキャビティ凹部をもつ放熱スラグ。
8. The surface 7 including the inside of the cavity recess 3 and the side end surface are roughened surfaces 12 except for a portion of the partial plating 11 on the surface 7 around the cavity recess 3 where wire bonding is possible. A heat dissipating slag having the cavity recess according to claim 1.
【請求項9】金属板1を、裏面2を平面台盤4で支持し
た状態で、プレス加工で複数回に分けて加圧形成するこ
とにより、キャビティ凹部3を所定深さmで、その底面
5と側面6、側面6と凹部周辺の表面7との各境界部
8,9を直交状の隅角に形成すると共に、裏面2の全体
をフラットに形成するようにし、その後に放熱スラグS
としての各個片に切断するようにしたことを特徴とす
る、キャビティ凹部をもつ放熱スラグの形成方法。
9. The metal plate 1 is pressed and formed in a plurality of times by press working in a state where the back surface 2 is supported by the flat base plate 4, so that the cavity concave portion 3 has a predetermined depth m and the bottom surface thereof. The boundary portions 8 and 9 between the side surface 5 and the side surface 6 and the side surface 6 and the surface 7 around the concave portion are formed at orthogonal corners, and the entire back surface 2 is formed to be flat.
A method for forming a heat dissipating slag having a cavity concave portion, wherein the heat dissipating slag is cut into individual pieces.
【請求項10】所定深さmのキャビティ凹部3が、底面
5と側面6、側面6と凹部周辺の表面7との各境界部
8,9で直交状の隅角に形成され、かつ裏面2の全体が
フラットに形成された構造とした放熱スラグSを、キャ
ビティ用開口15を有するプリント基板14へ接合した
構造であることを特徴とする、半導体パッケージ材料。
10. A cavity recess 3 having a predetermined depth m is formed at orthogonal corners at boundaries 8 and 9 between the bottom surface 5 and the side surface 6 and the side surface 6 and the surface 7 around the recess. A semiconductor package material having a structure in which a heat dissipating slag S having a structure formed entirely flat is joined to a printed board 14 having a cavity opening 15.
JP31597597A 1997-10-31 1997-10-31 Radiating slug having cavity recess, its forming method, and semiconductor package material using the same Pending JPH11135689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31597597A JPH11135689A (en) 1997-10-31 1997-10-31 Radiating slug having cavity recess, its forming method, and semiconductor package material using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31597597A JPH11135689A (en) 1997-10-31 1997-10-31 Radiating slug having cavity recess, its forming method, and semiconductor package material using the same

Publications (1)

Publication Number Publication Date
JPH11135689A true JPH11135689A (en) 1999-05-21

Family

ID=18071843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31597597A Pending JPH11135689A (en) 1997-10-31 1997-10-31 Radiating slug having cavity recess, its forming method, and semiconductor package material using the same

Country Status (1)

Country Link
JP (1) JPH11135689A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7812442B2 (en) 2002-06-12 2010-10-12 Samsung Electronics Co., Ltd. High-power ball grid array package, heat spreader used in the BGA package and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7812442B2 (en) 2002-06-12 2010-10-12 Samsung Electronics Co., Ltd. High-power ball grid array package, heat spreader used in the BGA package and method for manufacturing the same

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