JPH11102900A - Corrosion resistant member for manufacturing semiconductor - Google Patents
Corrosion resistant member for manufacturing semiconductorInfo
- Publication number
- JPH11102900A JPH11102900A JP9264561A JP26456197A JPH11102900A JP H11102900 A JPH11102900 A JP H11102900A JP 9264561 A JP9264561 A JP 9264561A JP 26456197 A JP26456197 A JP 26456197A JP H11102900 A JPH11102900 A JP H11102900A
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- plasma
- members
- fluorine
- boron carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Ceramic Products (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、特にフッ素系や塩
素系腐食性ガス、或いはフッ素系や塩素系プラズマに対
して高い耐食性を有する半導体製造用装置の内壁部材や
被処理物を支持する支持体などの治具等として使用され
る部材に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a support for supporting an inner wall member or an object to be processed of a semiconductor manufacturing apparatus having a high corrosion resistance especially to a fluorine-based or chlorine-based corrosive gas or a fluorine-based or chlorine-based plasma. The present invention relates to a member used as a jig or the like for a body.
【０００２】[0002]
【従来の技術】半導体素子などの高集積回路素子の製造
に使用されるドライプロセスやプラズマコーティング等
プラズマの利用は近年急速に進んでいる。半導体製造に
おけるプラズマプロセスとしては、フッ素系等のハロゲ
ン系腐食ガスがその反応性の高さから、気相成長、エッ
チングやクリーニングに利用されている。2. Description of the Related Art In recent years, the use of plasma such as a dry process and plasma coating used for manufacturing highly integrated circuit devices such as semiconductor devices has been rapidly progressing. As a plasma process in semiconductor manufacturing, a halogen-based corrosive gas such as a fluorine-based gas is used for vapor phase growth, etching and cleaning due to its high reactivity.
【０００３】これら腐食性ガスに接触する部材は、高い
耐食性が要求される。従来より被処理物以外のこれらプ
ラズマに接触する部材は、一般にガラスや石英などのＳ
ｉＯ2 を主成分とする材料や、ステンレス、モネル等の
金属が多用されている。[0003] These members that come into contact with corrosive gas are required to have high corrosion resistance. Conventionally, members other than the object to be processed that come into contact with these plasmas are generally made of glass or quartz.
Materials containing iO 2 as a main component and metals such as stainless steel and Monel are frequently used.
【０００４】また、半導体製造時において、ウェハを支
持固定するサセプタ材としてアルミナ焼結体、サファイ
ア、ＡｌＮの焼結体、又はこれらをＣＶＤ法等により表
面被覆したものが耐食性に優れるとして使用されてい
る。また、グラファイト、窒化硼素をコーティングした
ヒーター等も使用されている。In the manufacture of semiconductors, as a susceptor material for supporting and fixing a wafer, a sintered body of alumina, sapphire, or a sintered body of AlN, or a surface-coated body thereof by a CVD method or the like has been used as having excellent corrosion resistance. I have. Further, a heater coated with graphite or boron nitride is also used.
【０００５】[0005]
【発明が解決しようとする課題】しかし、従来から用い
られているガラスや石英ではプラズマ中の耐食性が不充
分で消耗が激しく、特にフッ素或いは塩素プラズマに接
すると接触面がエッチングされ、表面性状が変化してエ
ッチング条件に影響する等の問題が生じていた。However, conventionally used glass and quartz have insufficient corrosion resistance in plasma and are intensely depleted. In particular, when they come into contact with fluorine or chlorine plasma, the contact surface is etched and the surface properties are reduced. There have been problems such as changes that affect the etching conditions.
【０００６】また、ステンレスなどの金属を使用した部
材でも耐食性が不充分なため、腐食によって特に半導体
製造においては不良品発生の原因となる。[0006] Further, even members made of metal such as stainless steel have insufficient corrosion resistance, so that corrosion causes defective products especially in semiconductor manufacturing.
【０００７】アルミナ、ＡｌＮの焼結体は、上記の材料
に比較してフッ素系ガスに対して耐食性に優れるもの
の、高温でプラズマと接すると腐食が徐々に進行して焼
結体の表面から結晶粒子の脱粒が生じ、パーティクル発
生の原因になるという問題が起きている。[0007] Alumina and AlN sintered bodies are more excellent in corrosion resistance to fluorine-based gas than the above materials, but when they come into contact with plasma at high temperature, the corrosion gradually progresses, and the surface of the sintered body crystallizes. There is a problem that particles are shed and cause particles to be generated.
【０００８】このようなパーティクルの発生は、半導体
の高集積化、プロセスの更なるクリーン化に伴い、イオ
ン衝撃や、気相で反応生成したごく微細なパーティクル
によってメタル配線の断線、パターンの欠陥等により素
子特性の劣化や歩留りの低下等の不具合を発生する恐れ
が生じている。The generation of such particles is caused by ion bombardment, breakage of metal wiring, pattern defects, and the like due to ion bombardment and extremely fine particles generated by reaction in the gas phase, as semiconductors become more highly integrated and processes become even cleaner. As a result, there is a possibility that problems such as deterioration of element characteristics and yield may occur.
【０００９】本発明者は、このような問題を解決するた
め、先にフッ素・塩素系プラズマに対して材料表面に安
定なハロゲン化物を形成する周期律表第２Ａ、３Ａ族元
素を主成分とする材料により形成することを提案してき
た。しかしながら、周期律表第２Ａ、３Ａ族元素を主成
分とする材料は、フッ素・塩素系のプラズマに対しては
安定ではあっても、材料表面に形成されたハロゲン化物
の脱落や、気相における反応によってパーティクルが発
生してしまうものであった。In order to solve such a problem, the inventor of the present invention has firstly made a group 2A or 3A element of the periodic table which forms a stable halide on the material surface against fluorine-chlorine-based plasma. It has been proposed to be formed of a material to be used. However, a material containing a Group 2A or 3A element of the periodic table as a main component is stable against fluorine-chlorine-based plasma, but the halide formed on the surface of the material drops off, Particles were generated by the reaction.
【００１０】[0010]
【問題を解決するための手段】本発明者は、フッ素系及
び塩素系腐食ガス或いはプラズマに対して、半導体の性
能を損ねるような元素を含まず、且つパーティクルを発
生しない高耐食性材料について検討を重ねた結果、緻密
な炭化硼素は、フッ素や塩素と反応した場合において
も、蒸気圧の高い反応物が生成されることから、パーテ
ィクルを発生することなく、ガスとして系外に放出さ
れ、しかも酸素を含まないフッ素系及び塩素系腐食ガス
或いはプラズマとは反応しにくいために耐食性にも優れ
ると言う優れた特性を有することを見いだした。Means for Solving the Problems The present inventor has studied a highly corrosion-resistant material which does not contain an element which impairs the performance of a semiconductor and does not generate particles against fluorine-based and chlorine-based corrosive gas or plasma. As a result of the superposition, dense boron carbide is released as a gas without generating particles, because even if it reacts with fluorine or chlorine, a reactant having a high vapor pressure is generated. It has been found that it has excellent characteristics that it is hardly reacted with a fluorine-based or chlorine-based corrosive gas or plasma containing no, and thus has excellent corrosion resistance.
【００１１】即ち、本発明の耐食性部材は、上記の知見
に基づき完成されたものであり、フッ素系及び塩素系腐
食ガス或いはそのプラズマに曝される耐食性部材におけ
る少なくとも前記腐食ガスやプラズマに直接接触する部
分を、相対密度が９８％以上の炭化硼素（Ｂ4 Ｃ）焼結
体によって形成することにより、高温・高密度のフッ素
系及び塩素系腐食雰囲気に長時間の耐食性を有し、且つ
コンタミネーションの発生やパーティクルを発生しない
耐食性部材を提供するものである。That is, the corrosion-resistant member of the present invention has been completed on the basis of the above findings, and has at least direct contact with at least the corrosion gas or plasma in the corrosion-resistant member exposed to a fluorine-based or chlorine-based corrosion gas or its plasma. Is formed by a sintered body of boron carbide (B 4 C) having a relative density of 98% or more, which has long-time corrosion resistance in a high-temperature, high-density fluorine-based and chlorine-based corrosive atmosphere, An object of the present invention is to provide a corrosion-resistant member that does not generate nation or particles.
【００１２】[0012]
【発明の実施の形態】本発明の耐食性部材は、フッ素系
または塩素系等のハロゲン系の腐食ガスまたはプラズマ
に曝される部材であり、フッ素系ガスとしては、Ｓ
Ｆ6 、ＣＦ4 、ＣＨＦ3 、ＣｌＦ3 、ＨＦ等が、また塩
素系ガスとしては、Ｃｌ2 、ＢＣｌ3 、ＨＣｌ等が挙げ
られ、これらのガスが導入された雰囲気にマイクロ波や
高周波等を導入するとこれらのガスがプラズマ化され
る。BEST MODE FOR CARRYING OUT THE INVENTION The corrosion-resistant member of the present invention is a member that is exposed to a halogen-based corrosive gas such as a fluorine-based or chlorine-based gas or a plasma.
F 6 , CF 4 , CHF 3 , ClF 3 , HF, and the like, and chlorine-based gases include Cl 2 , BCl 3 , HCl, and the like. When introduced, these gases are turned into plasma.
【００１３】本発明によれば、このようなハロゲン系の
腐食ガスあるいはそのプラズマに曝される部位を、相対
密度が９８％以上の炭化硼素（Ｂ4 Ｃ）焼結体から構成
するものである。また、部品としての耐久性を維持する
ためには、３００ＭＰａ以上の抗折強度を有することが
望ましい。According to the present invention, the portion exposed to such a halogen-based corrosive gas or its plasma is made of a boron carbide (B 4 C) sintered body having a relative density of 98% or more. . Further, in order to maintain the durability as a part, it is desirable to have a bending strength of 300 MPa or more.
【００１４】炭化硼素焼結体は、低密度で多量の気孔を
有する場合は、それだけ腐食ガスやプラズマとの接触面
積が増加し、消耗が速くなるため、少なくともガスやプ
ラズマとの接触部位においては、相対密度が９８％以
上、、特に９９％以上がよく、さらには開気孔率０．２
％以下の緻密体であることが必要である。When the boron carbide sintered body has a low density and a large number of pores, the contact area with the corrosive gas or the plasma increases and the consumption becomes faster, so that at least at the contact portion with the gas or the plasma. , The relative density is 98% or more, particularly 99% or more, and the open porosity is 0.2
% Or less.
【００１５】また、シリコンウエハの大口径化に伴い、
製造装置や構成部品自体も大型化が進んでいるため、３
００ＭＰａ以上の強度を有する焼結体でなければ、チャ
ンバー材や保護カバー、ライナーなどの構成材としての
信頼性に欠ける。Further, with the increase in the diameter of the silicon wafer,
Manufacturing equipment and components themselves are also increasing in size.
If it is not a sintered body having a strength of 00 MPa or more, it lacks reliability as a constituent material such as a chamber material, a protective cover, and a liner.
【００１６】なお、この炭化硼素焼結体は、フッ素系ま
たは塩素系などのハロゲン系の腐食ガスまたはそのプラ
ズマに曝される部位に、少なくともその厚みが１０μｍ
以上であることが、優れた耐食性を付与する上で望まし
い。つまり、その厚みが１０μｍより薄いと優れた耐食
効果が期待できないためである。The sintered boron carbide has a thickness of at least 10 μm at a portion exposed to a halogen-based corrosive gas such as a fluorine-based or chlorine-based gas or its plasma.
The above is desirable in providing excellent corrosion resistance. That is, if the thickness is less than 10 μm, excellent corrosion resistance cannot be expected.
【００１７】また、上記炭化硼素の焼結体は、従来公知
の製造方法、例えば、平均粒径２０μｍ以下の炭化硼素
粉末を、モールド中に充填あるいは所望の形状に成形
し、２１００〜２３００℃の非酸化性雰囲気中でホット
プレスすることにより得られる。この時、Ｃ（カーボ
ン）やＳｉＣ、Ｓｉ3 Ｎ4 等の焼結助剤を添加して、非
酸化性雰囲気下あるいは真空中でより低温で焼成するこ
ともできる。さらに、成形体または焼結体を熱間静水圧
焼成により１０００気圧以上の不活性雰囲気中で加熱処
理して、さらに緻密化することもできる。The above-mentioned sintered body of boron carbide can be produced by a conventionally known production method, for example, by filling boron carbide powder having an average particle diameter of 20 μm or less into a mold or molding it into a desired shape. It is obtained by hot pressing in a non-oxidizing atmosphere. At this time, it is also possible to add a sintering aid such as C (carbon), SiC, or Si 3 N 4 and fire at a lower temperature in a non-oxidizing atmosphere or in a vacuum. Further, the compact or sintered body can be further densified by heat treatment in an inert atmosphere of 1000 atm or more by hot isostatic firing.
【００１８】また、本発明の耐食性部材としては、上記
のようにして作製される炭化硼素焼結体にとどまらず、
周知のゾルゲル法により液相を塗布し焼成した薄膜状焼
結体でもよい。これらの中では、前述したような粉末を
成形し焼成した焼結体であることが、あらゆる部材への
適用性に優れることから最も望ましい。この炭化硼素焼
結体は、抵抗が１０12Ωｃｍ以上の高絶縁体からなるも
のである。Further, the corrosion-resistant member of the present invention is not limited to the boron carbide sintered body manufactured as described above.
A thin-film sintered body obtained by applying a liquid phase by a well-known sol-gel method and firing it may be used. Among these, a sintered body obtained by molding and firing the above-described powder is most desirable because of its excellent applicability to all members. This boron carbide sintered body is made of a high insulator having a resistance of 10 12 Ωcm or more.
【００１９】また、炭化硼素焼結体からなる部材中にお
いて、フッ素や塩素などのハロゲン系腐食ガスやプラズ
マに腐食されやすいＳｉ、Ｇｅ、Ｍｏ、Ｗの含有量は全
量中１重量％以下に抑えることが好ましい。但し、これ
らのフッ素に腐食されやすい元素が主結晶粒子内に固溶
して粒界に存在しない場合はこの限りでない。In the member made of the boron carbide sintered body, the contents of Si, Ge, Mo, and W which are easily corroded by a halogen-based corrosive gas such as fluorine or chlorine or plasma are suppressed to 1% by weight or less of the total amount. Is preferred. However, this does not apply when these elements which are easily corroded by fluorine are dissolved in the main crystal grains and do not exist at the grain boundaries.
【００２０】[0020]
実施例１ 以下に具体的なプラズマ照射実験の結果について述べ
る。まず、Ｂ4 Ｃ焼結体として、純度９９．５％以上の
粉体を窒素雰囲気中で２１８０℃で焼成して、相対密度
９９．１％の焼結体を作製した。なお、この焼結体のＪ
ＩＳＲ１６０１に基づく４点曲げ強度は４２０ＭＰａで
あった。Example 1 Hereinafter, specific results of a plasma irradiation experiment will be described. First, as a B 4 C sintered body, a powder having a purity of 99.5% or more was fired at 2180 ° C. in a nitrogen atmosphere to produce a sintered body having a relative density of 99.1%. In addition, J of this sintered body
The four-point bending strength based on ISR1601 was 420 MPa.
【００２１】さらに、同じ原料を用いて、２０２０〜２
３００℃の温度範囲でホットプレス焼成して相対密度の
異なる種々のＢ4 Ｃ焼結体を作製した。また、Ｃ、Ｓｉ
Ｃを焼結助剤としてＡｒ雰囲気中で加圧焼成した焼結体
も作製した。Further, using the same raw materials,
Various B 4 C sintered bodies having different relative densities were manufactured by hot press firing in a temperature range of 300 ° C. Also, C, Si
A sintered body fired under pressure in an Ar atmosphere using C as a sintering aid was also produced.
【００２２】また、比較のために、種々のＢ4 Ｃ以外の
焼結体を作製した。まず、ＢＮ焼結体は純度９９．５％
のＢＮ粉末を２０００℃でホットプレス焼成して作製し
た。For comparison, various sintered bodies other than B 4 C were prepared. First, the BN sintered body has a purity of 99.5%.
Of BN powder was hot-pressed at 2000 ° C.
【００２３】Ｓｉ3 Ｎ4 焼結体は、Ｓｉ3 Ｎ4 粉末に、
焼結助剤としてＹ2 Ｏ3 ３重量％、Ａｌ2 Ｏ3 ４重量％
添加して、窒素雰囲気中で１７５０℃で焼成して作製し
た。ＳｉＣ焼結体は、α−ＳｉＣ粉末にＢ4 Ｃを０．６
重量％、カーボンを２重量％添加して、非酸化雰囲気中
２０６０℃で焼成した。Ａｌ2 Ｏ3 焼結体は、助剤を添
加せず大気中、１８００℃で焼成し、ＡｌＮ焼結体も焼
結助剤を添加せず、窒素中２０６０℃で焼成して作製し
た。また、Ｓｉ多結晶体、およびＳｉＯ2 単結晶（石
英）も準備した。[0023] Si 3 N 4 sintered body, the Si 3 N 4 powder,
Y 2 O 3 3% by weight as a sintering aid, Al 2 O 3 4% by weight
It was prepared by adding and firing at 1750 ° C. in a nitrogen atmosphere. The SiC sintered body is obtained by adding B 4 C to α-SiC powder at 0.6.
2% by weight of carbon and 2% by weight of carbon were fired at 2060 ° C. in a non-oxidizing atmosphere. The Al 2 O 3 sintered body was produced by firing at 1800 ° C. in the air without adding an auxiliary agent, and the AlN sintered body was fired at 2060 ° C. in nitrogen without adding the sintering auxiliary agent. In addition, a Si polycrystal and a SiO 2 single crystal (quartz) were also prepared.
【００２４】得られた各焼結体について、焼結体の相対
密度をアルキメデス法に基づき算出した。また、抗折強
度はＪＩＳＲ１６０１４点曲げで測定した。For each of the obtained sintered bodies, the relative density of the sintered body was calculated based on the Archimedes method. The bending strength was measured by JIS R16014 point bending.
【００２５】各部材について、ＲＩＥプラズマエッチン
グ装置にて、これらをＣＦ4 （６０ｓｃｃｍ）+ Ａｒ
（６０ｓｃｃｍ）、ＳＦ6 （８０ｓｃｃｍ）のフッ素系
プラズマに室温で曝し、エッチングレートとパーティク
ルの有無を調査した。結果を表１、２に示す。エッチン
グ条件はいずれも圧力１０Ｐａ、ＲＦ出力１ｋＷ、プラ
ズマ照射時間３時間とした。エッチングレートはテスト
前後の重量変化を基に算出し、パーティクルの有無は電
子顕微鏡にて試料表面を観察して、表面への粒子の付着
の有無を観察した。Each of the members was converted to CF 4 (60 sccm) + Ar using an RIE plasma etching apparatus.
( 60 sccm) and SF 6 (80 sccm) were exposed to fluorine plasma at room temperature, and the etching rate and the presence or absence of particles were examined. The results are shown in Tables 1 and 2. All the etching conditions were a pressure of 10 Pa, an RF output of 1 kW, and a plasma irradiation time of 3 hours. The etching rate was calculated based on the change in weight before and after the test, and the presence or absence of particles was observed by observing the sample surface with an electron microscope to determine whether particles adhered to the surface.
【００２６】[0026]
【表１】 [Table 1]
【００２７】[0027]
【表２】 [Table 2]
【００２８】表１の結果によれば、ＢＮ焼結体からなる
試料Ｎo.１は非常に消耗が激しく使用に耐えない。ま
た、Ｓｉ，ＳｉＯ2 （石英）、Ｓｉ3 Ｎ4 焼結体からな
る試料Ｎo.４〜６もいずれも消耗が激しく、特にＳｉ3
Ｎ4 焼結体からなる試料Ｎo.６ではＳｉ3 Ｎ4 粒子が選
択的にエッチングされ、残留した粒界相がパーティクル
発生の原因となっていた。ＳｉＣ焼結体の試料Ｎo.７は
表面が黒く変色し炭素が析出していた。Ａｌ2 Ｏ3 焼結
体やＡｌＮ焼結体の試料Ｎo.８、９は、エッチングレー
トは低いものの、表面に脱粒やフッ化物の堆積が生じて
いた。一方、Ｂ4Ｃ焼結体からなる試料Ｎo.２、３で
は、エッチングレートが低く、かつ表面に脱粒や生成物
の堆積などは見られなかった。According to the results shown in Table 1, the sample No. 1 made of a BN sintered body was extremely consumed and could not be used. Furthermore, Si, SiO 2 (quartz), both also sample No.4~6 made of Si 3 N 4 sintered body exhaustion vigorously, especially Si 3
In sample No. 6 made of an N 4 sintered body, the Si 3 N 4 particles were selectively etched, and the remaining grain boundary phase was a cause of particles. Sample No. 7 of the SiC sintered body had a surface discolored black and carbon was deposited. Samples Nos. 8 and 9 of the Al 2 O 3 sintered body and the AlN sintered body had a low etching rate, but had degranulation and fluoride deposition on the surface. On the other hand, in Samples Nos. 2 and 3 made of a B 4 C sintered body, the etching rate was low, and no particles were found on the surface or no product was deposited.
【００２９】また、表２の結果によれば、ホットプレス
焼成して作製した試料Ｎo.１０〜１４のうち、試料Ｎo.
１０は、粒成長が著しく、強度が低下した。試料Ｎo.１
４は、相対密度が９８％より低く、強度の低下に加え
て、エッチング面の気孔を起点に腐食が進行し、耐食性
が低下した。その他の焼結体については、ホットプレス
焼成、助剤を添加した雰囲気焼成共に良好な特性を示し
た。According to the results shown in Table 2, among the samples Nos. 10 to 14 manufactured by hot press firing, the sample No.
In No. 10, the grain growth was remarkable, and the strength was reduced. Sample No.1
In No. 4, the relative density was lower than 98%, and in addition to the decrease in strength, corrosion progressed from the pores on the etched surface, and the corrosion resistance was reduced. Other sintered bodies exhibited good characteristics in both hot press firing and firing in an atmosphere containing an auxiliary agent.
【００３０】実施例２ 実施例１と同様な材料を、ＲＩＥプラズマエッチング装
置にて、ＢＣｌ3 （１００ｓｃｃｍ）の塩素プラズマ中
に室温で曝し、エッチングレートとパーティクルの有無
を調査した。エッチング条件は、圧力４Ｐａ、ＲＦ出力
１．８ｋＷ、プラズマ照射時間３時間とした。評価方法
は実施例１と同様である。Example 2 The same material as in Example 1 was exposed to chlorine plasma of BCl 3 (100 sccm) at room temperature using an RIE plasma etching apparatus, and the etching rate and the presence or absence of particles were examined. The etching conditions were a pressure of 4 Pa, an RF output of 1.8 kW, and a plasma irradiation time of 3 hours. The evaluation method is the same as in the first embodiment.
【００３１】[0031]
【表３】 [Table 3]
【００３２】[0032]
【表４】 [Table 4]
【００３３】表３によれば、ＢＮ焼結体からなる試料Ｎ
o.１６は、非常に消耗が激しく使用に耐えない。他材料
も実施例１と同様にエッチングレートと反応生成物のパ
ーティクル化を考え合わせると、Ｂ4 Ｃ焼結体が特に優
れた特性を示した。According to Table 3, the sample N made of a BN sintered body
o.16 is extremely worn out and cannot be used. As for the other materials, the B 4 C sintered body showed particularly excellent characteristics when the etching rate and the formation of particles of the reaction product were considered in the same manner as in Example 1.
【００３４】表４によれば、相対密度が９８％より低い
試料Ｎo.２６は、実施例１と同様に強度および耐食性が
低下した。その他の焼結体については、ホットプレス焼
成、助剤を添加した雰囲気焼成共に良好な特性を示し
た。According to Table 4, the sample No. 26 having a relative density of less than 98% had the same strength and corrosion resistance as in Example 1. Other sintered bodies exhibited good characteristics in both hot press firing and firing in an atmosphere containing an auxiliary agent.
【００３５】この様に、Ｂ4 Ｃ焼結体からなる部材を用
いることにより、フッ素系・塩素系ガスに対する耐食性
に優れ、コンタミネーションやパーティクルを発生しな
い半導体製造用部品が実現できる。As described above, by using a member made of a B 4 C sintered body, it is possible to realize a semiconductor manufacturing component which has excellent corrosion resistance to fluorine-based and chlorine-based gases and does not generate contamination or particles.
【００３６】[0036]
【発明の効果】本発明によれば、フッ素系及び塩素系腐
食性ガス或いはプラズマに曝される部材として炭化硼素
を主成分とした材料を使用することにより、高温・高密
度のフッ素系及び塩素系腐食雰囲気に長時間の耐久性を
有し、且つコンタミネーションやパーティクルを発生し
ないことから、半導体製造用装置、とりわけプラズマ処
理装置の内壁部材や被処理物を支持する支持体などの治
具等の部材として使用することにより、半導体製造の歩
留り向上とともに高品質の半導体素子を作製することが
できる。According to the present invention, high-temperature and high-density fluorine-based and chlorine-based materials are used as members exposed to fluorine-based and chlorine-based corrosive gases or plasmas. Jigs such as semiconductor manufacturing equipment, especially plasma processing equipment, such as inner wall members and supports for supporting objects to be processed, because they have long-term durability in a system corrosive atmosphere and do not generate contamination or particles. By using it as a member, it is possible to improve the yield of semiconductor manufacturing and to manufacture a high-quality semiconductor element.
Claims (1)
される部位が、相対密度９８％以上の炭化硼素（Ｂ
4 Ｃ）焼結体により形成されていることを特徴とする半
導体製造用耐食性部材。A portion exposed to a halogen-based corrosive gas or plasma contains boron carbide (B) having a relative density of 98% or more.
4 C) A corrosion-resistant member for semiconductor production characterized by being formed of a sintered body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26456197A JP3500278B2 (en) | 1997-09-29 | 1997-09-29 | Corrosion resistant materials for semiconductor manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26456197A JP3500278B2 (en) | 1997-09-29 | 1997-09-29 | Corrosion resistant materials for semiconductor manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11102900A true JPH11102900A (en) | 1999-04-13 |
| JP3500278B2 JP3500278B2 (en) | 2004-02-23 |
Family
ID=17405000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26456197A Expired - Fee Related JP3500278B2 (en) | 1997-09-29 | 1997-09-29 | Corrosion resistant materials for semiconductor manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3500278B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001240474A (en) * | 2000-02-29 | 2001-09-04 | Kyocera Corp | Plasma proof member, its manufacturing method and plasma device |
| US7329467B2 (en) | 2003-08-22 | 2008-02-12 | Saint-Gobain Ceramics & Plastics, Inc. | Ceramic article having corrosion-resistant layer, semiconductor processing apparatus incorporating same, and method for forming same |
| JP2009221103A (en) * | 2003-06-12 | 2009-10-01 | Georgia Tech Research Corp | Boron carbide component |
| US8017062B2 (en) | 2004-08-24 | 2011-09-13 | Yeshwanth Narendar | Semiconductor processing components and semiconductor processing utilizing same |
| JP2020027945A (en) * | 2018-08-13 | 2020-02-20 | エスケーシー ソルミックス カンパニー，リミテッド | Ring-shaped element for etcher and method for etching substrate using the same |
| JP2020073420A (en) * | 2018-08-13 | 2020-05-14 | エスケーシー ソルミックス カンパニー，リミテッド | Boron carbide sintered body and etcher including the same |
-
1997
- 1997-09-29 JP JP26456197A patent/JP3500278B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001240474A (en) * | 2000-02-29 | 2001-09-04 | Kyocera Corp | Plasma proof member, its manufacturing method and plasma device |
| JP4651148B2 (en) * | 2000-02-29 | 2011-03-16 | 京セラ株式会社 | Plasma-resistant member and plasma apparatus |
| JP2009221103A (en) * | 2003-06-12 | 2009-10-01 | Georgia Tech Research Corp | Boron carbide component |
| US7329467B2 (en) | 2003-08-22 | 2008-02-12 | Saint-Gobain Ceramics & Plastics, Inc. | Ceramic article having corrosion-resistant layer, semiconductor processing apparatus incorporating same, and method for forming same |
| US8017062B2 (en) | 2004-08-24 | 2011-09-13 | Yeshwanth Narendar | Semiconductor processing components and semiconductor processing utilizing same |
| JP2020027945A (en) * | 2018-08-13 | 2020-02-20 | エスケーシー ソルミックス カンパニー，リミテッド | Ring-shaped element for etcher and method for etching substrate using the same |
| JP2020073420A (en) * | 2018-08-13 | 2020-05-14 | エスケーシー ソルミックス カンパニー，リミテッド | Boron carbide sintered body and etcher including the same |
| JP2021151949A (en) * | 2018-08-13 | 2021-09-30 | エスケーシー ソルミックス カンパニー，リミテッド | Boron carbide sintered body and etching apparatus containing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3500278B2 (en) | 2004-02-23 |
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