JPH1071483A - How to cut brittle materials - Google Patents
How to cut brittle materialsInfo
- Publication number
- JPH1071483A JPH1071483A JP8228855A JP22885596A JPH1071483A JP H1071483 A JPH1071483 A JP H1071483A JP 8228855 A JP8228855 A JP 8228855A JP 22885596 A JP22885596 A JP 22885596A JP H1071483 A JPH1071483 A JP H1071483A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- cutting line
- stress
- along
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 24
- 238000005520 cutting process Methods 0.000 claims abstract description 75
- 230000035882 stress Effects 0.000 claims abstract description 57
- 238000005452 bending Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000008646 thermal stress Effects 0.000 claims abstract description 16
- 238000003776 cleavage reaction Methods 0.000 claims description 4
- 230000007017 scission Effects 0.000 claims description 4
- 230000000644 propagated effect Effects 0.000 abstract description 7
- 230000001939 inductive effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 30
- 239000004065 semiconductor Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
Abstract
(57)【要約】
【課題】レーザビームの照射による熱応力を利用して脆
性材料を割断するに際して、予め割断予定線沿った溝を
形成する等の新たな工程を必要とせずに、確実に亀裂を
誘導することが可能な脆性材料の割断方法を提供する。
【解決手段】曲げ応力付加用治具１５ａ，１５ｂにより
割断予定線Ｓで最大となる曲げ応力を付与し、その状態
を保ちながら割断予定線Ｓにレーザビーム１０を照射す
る。これにより、曲げ応力にレーザビーム１０の照射に
よる熱応力が合成され、割断予定線Ｓの方向に沿って確
実に亀裂が進展する。また、割断予定線Ｓに沿って引張
り応力を付与してもよい。
(57) [Summary] [PROBLEMS] To cut a brittle material by using thermal stress caused by laser beam irradiation, without necessitating a new process such as forming a groove along a predetermined cutting line in advance, without fail. Provided is a method for cutting a brittle material capable of inducing a crack. Kind Code: A1 A bending stress is applied to a predetermined cutting line by a bending stress applying jig, and a laser beam is applied to the predetermined cutting line while maintaining the state. As a result, the thermal stress due to the irradiation of the laser beam 10 is combined with the bending stress, and the crack is reliably propagated in the direction of the scheduled cutting line S. Further, a tensile stress may be applied along the planned cutting line S.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体チップ用の
ウェハ、ガラス、石英、あるいはセラミック等の脆性材
料を、レーザビームの照射による熱応力を利用して割断
加工する脆性材料の割断方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaving brittle materials, such as wafers for semiconductor chips, glass, quartz, or ceramics, using thermal stress caused by laser beam irradiation.
【０００２】[0002]
【従来の技術】半導体チップ用のウェハ、ガラス、石
英、あるいはセラミック等の脆性材料から製品を切り出
す方法として、レーザビーム照射による熱応力を利用し
たものが特開平１−１０８００６号公報に開示されてい
る。この従来技術では、最初に亀裂を入れておき、レー
ザビームをその亀裂部分に照射し、そのレーザビームの
照射位置を次々に移動させ、亀裂を次々に誘導、進展さ
せることにより割断を行う。2. Description of the Related Art Japanese Patent Laid-Open Publication No. 1-108006 discloses a method for cutting out a product from a brittle material such as a wafer for a semiconductor chip, glass, quartz, or ceramic using laser beam irradiation. I have. In this conventional technique, a crack is first formed, a laser beam is irradiated to the crack, the irradiation position of the laser beam is moved one after another, and the crack is guided and propagated one after another to perform the cleavage.
【０００３】この割断方法は、それ以前の切断方法に比
べて切断屑の発生による汚染の問題を生じることがな
い。また、一般には切断にはある程度の切断幅が必要で
あるが、上記従来技術ではその切断幅もほとんど不要で
あり、材料を有効利用することが可能である。しかし、
その反面で、上記従来技術では割断の方向制御が困難で
あり、割断予定線から外れた方向の亀裂が進んでしまう
可能性もあって、不良品が発生し易いという点もあっ
た。[0003] This cutting method does not cause the problem of contamination due to the generation of cutting chips as compared with previous cutting methods. Further, cutting generally requires a certain cutting width, but in the above-mentioned conventional technology, the cutting width is almost unnecessary, and the material can be used effectively. But,
On the other hand, it is difficult to control the cutting direction in the above-described conventional technology, and there is a possibility that a crack may deviate in a direction deviating from the planned cutting line, so that defective products are easily generated.
【０００４】これに対し、特開平４−１１８１９０号公
報では、被加工材料の割断予定線に沿って予め微細な溝
を設けておく方式が提案されており、上記特開平１−１
０８００６号公報における方向制御が困難であるという
点を補うことが可能である。On the other hand, Japanese Patent Application Laid-Open No. Hei 4-118190 proposes a method in which fine grooves are provided in advance along a cutting line of a material to be processed.
It is possible to supplement the point that the direction control in 08006 is difficult.
【０００５】例えば、図４に示すように、エッチング、
スパッタリング、ＣＶＤもしくはＰＶＤの加工技術を用
いて、半導体チップ用のウェハ１０１上にレーザビーム
径よりも小さい幅の溝１０２を、割断予定線Ｌに沿って
形成しておく。その後、ウェハ１０１端縁の溝１０２近
傍位置にレーザビームを照射し、次いでウェハ１０１と
レーザ光源との相対的に移動により、上記レーザビーム
照射位置を上記割断予定線Ｌ上に沿って移動させる。[0005] For example, as shown in FIG.
Using a processing technique such as sputtering, CVD or PVD, a groove 102 having a width smaller than the laser beam diameter is formed on a semiconductor chip wafer 101 along a planned cutting line L. Thereafter, a laser beam is irradiated to a position near the groove 102 at the edge of the wafer 101, and then the laser beam irradiation position is moved along the planned cutting line L by relatively moving the wafer 101 and the laser light source.
【０００６】ウェハ１０１に形成した溝１０２の位置に
レーザビームを照射すると、その照射位置の中心部には
周辺から圧縮応力が作用し、かつその周辺部には引張り
応力が作用する。これにより、レーザビームの照射位置
から亀裂が溝１０２に沿って発生し、その亀裂の一部は
ウェハ１０１の端縁まで達する。そして、レーザビーム
の照射位置を各割断予定線Ｌに沿って移動させること
で、そのレーザビームによる熱応力によりウェハ１０１
端縁から割断予定線Ｌに沿って亀裂を進展させることが
できる。When a laser beam is applied to the position of the groove 102 formed in the wafer 101, a compressive stress acts on the center of the irradiation position from the periphery and a tensile stress acts on the periphery. As a result, a crack is generated along the groove 102 from the irradiation position of the laser beam, and a part of the crack reaches the edge of the wafer 101. Then, by moving the irradiation position of the laser beam along each cutting line L, the wafer 101 is subjected to thermal stress by the laser beam.
A crack can be propagated from the edge along the planned cutting line L.
【０００７】[0007]
【発明が解決しようとする課題】上記特開平４−１１８
１９０号公報に記載の従来技術によれば、亀裂の進展の
制御を確実に行うことができ、割断作業時における不良
品の発生を避けることができる。ところが、上記溝１０
２を予め形成するためには、具体的にはフォトリソグラ
フィやケミカルドライエッチング等を採用し、溝１０２
の幅を２〜３μｍ程度と微細にしなければならなず、一
連の半導体装置の製造工程に新たな工程を設ける必要が
生じる。SUMMARY OF THE INVENTION The above-mentioned Japanese Patent Application Laid-Open No. 4-118 is disclosed.
According to the conventional technique described in Japanese Patent Application Publication No. 190-190, it is possible to reliably control the growth of a crack, and to avoid the occurrence of defective products at the time of a cutting operation. However, the groove 10
In order to form the groove 102 in advance, specifically, photolithography, chemical dry etching, or the like is employed,
Must be made as fine as about 2 to 3 μm, and it is necessary to provide a new process in a series of semiconductor device manufacturing processes.
【０００８】本発明の目的は、レーザビームの照射によ
る熱応力を利用して脆性材料を割断するに際して、予め
割断予定線沿った溝を形成する等の新たな工程を必要と
せずに、確実に亀裂を誘導することが可能な脆性材料の
割断方法を提供することである。An object of the present invention is to reliably cut a brittle material by utilizing thermal stress caused by laser beam irradiation without requiring a new step such as forming a groove in advance along a predetermined cutting line. An object of the present invention is to provide a method for cutting a brittle material capable of inducing a crack.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するた
め、本発明によれば、レーザビームの照射による熱応力
を利用した脆性材料の割断方法において、割断予定線に
沿って応力を付与した状態でその割断予定線にレーザビ
ームを照射し、前記割断予定線に沿う応力とレーザビー
ム照射による熱応力とによって脆性材料を割断すること
を特徴とする脆性材料の割断方法が提供される。According to the present invention, there is provided a method for cutting a brittle material utilizing thermal stress caused by laser beam irradiation, wherein the stress is applied along a scheduled cutting line. The present invention provides a method for cleaving a brittle material, which comprises irradiating a laser beam to the planned cutting line and cleaving the brittle material by a stress along the planned cutting line and a thermal stress caused by laser beam irradiation.
【００１０】上記のように構成した本発明においては、
割断予定線に沿って応力を付与しておき、その状態を保
ちながらその割断予定線にレーザビームを照射すること
により、予め付与しておいた応力に、レーザビーム照射
による熱応力が合成され、割断予定線の方向に沿って確
実に亀裂が進展して行く。従って、特開平４−１１８１
９０号公報に記載の従来技術のように、予め割断予定線
沿った溝を形成する等の新たな工程を必要とせず、確実
に亀裂を誘導することが可能となる。In the present invention configured as described above,
By applying a stress along the planned cutting line and irradiating the planned cutting line with a laser beam while maintaining the state, the thermal stress due to laser beam irradiation is combined with the previously applied stress, Cracks grow reliably along the direction of the planned cutting line. Accordingly, Japanese Patent Application Laid-Open No.
As in the prior art described in Japanese Patent Application Publication No. 90-90, a new process such as forming a groove in advance along a cleavage line is not required, and a crack can be reliably induced.
【００１１】この時のレーザビームのエネルギーは、溶
断に至らない程度で、短時間に熱応力を加えられる程度
であればよい。脆性材料としては、例えば半導体チップ
用のウェハ、ガラス、石英、あるいはセラミック等が適
用可能である。The energy of the laser beam at this time may be such that it does not lead to fusing and can apply thermal stress in a short time. As the brittle material, for example, a semiconductor chip wafer, glass, quartz, ceramic, or the like can be used.
【００１２】ここで、割断予定線に沿って付与する応力
は、レーザビームの入射側の割断予定線で最大となる曲
げ応力とすることが好ましい。これにより、曲げ応力が
最大となっている割断予定線の方向に、レーザビーム照
射による熱応力が与えられて、確実に亀裂が進展する。Here, it is preferable that the stress applied along the planned cutting line is a bending stress which is the maximum at the planned cutting line on the laser beam incident side. Thereby, the thermal stress by the laser beam irradiation is given in the direction of the planned cutting line where the bending stress is maximum, and the crack is surely propagated.
【００１３】また、割断予定線に沿って付与する応力
は、割断予定線に垂直な方向に付与される引張り応力と
することが好ましい。この場合も上記と同様に、引張り
応力が加えられた状態でレーザビーム照射による熱応力
が与えられて、確実に亀裂が進展するが、その引張り応
力が加わっている範囲ではその引張り応力値はほぼ均一
であり、その範囲内であれば割断予定線を任意に設定可
能である。Further, it is preferable that the stress applied along the planned cutting line is a tensile stress applied in a direction perpendicular to the planned cutting line. Also in this case, similarly to the above, the thermal stress by the laser beam irradiation is applied in the state where the tensile stress is applied, and the crack grows surely, but the tensile stress value is almost in the range where the tensile stress is applied. It is uniform, and the planned cutting line can be arbitrarily set within the range.
【００１４】[0014]
【発明の実施の形態】本発明の第１の実施形態につい
て、図１および図２を参照しながら説明する。但し本実
施形態では、脆性材料として半導体チップ用のウェハを
使用した場合について説明する。図１は本実施形態の概
要を示す図である。ウェハ１２は、図１（ａ）に示すよ
うに上面（レーザビーム１０の入射側）および下面（レ
ーザビーム１０の反入射側）から、それぞれ曲げ応力付
加用治具１５ａ，１５ｂにより支持され、図１（ｂ）に
示すように上側の曲げ応力付加用治具１５ａと下側の曲
げ応力付加用治具１５ｂと間に外力Ｆ1，Ｆ2が付与され
る。この時、２つの上側の曲げ応力付加用治具１５ａに
与える外力Ｆ1は等しく、かつ下側の曲げ応力付加用治
具１５ｂに与える外力Ｆ2の１／２となるようにする。
また、上記曲げ応力は、２つの上側の曲げ応力付加用治
具１５ａの丁度中央に下側の曲げ応力付加用治具１５ｂ
が位置するようにしておき、割断予定線Ｓが下側の曲げ
応力付加用治具１５ｂの位置に来るようにそれぞれの位
置関係を設定しておけば、曲げ応力はレーザビーム１０
の入射側の割断予定線Ｓで最大となる。なお、図１にお
ける割断予定線Ｓは紙面に垂直な方向となっている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described with reference to FIGS. However, in this embodiment, a case where a wafer for a semiconductor chip is used as a brittle material will be described. FIG. 1 is a diagram showing an outline of the present embodiment. As shown in FIG. 1A, the wafer 12 is supported by bending stress applying jigs 15a and 15b from the upper surface (the incident side of the laser beam 10) and the lower surface (the opposite side of the laser beam 10), respectively. As shown in FIG. 1B, external forces F 1 and F 2 are applied between the upper bending stress applying jig 15a and the lower bending stress applying jig 15b. At this time, the external force F 1 applied to the two upper bending stressing jig 15a are equal, and made to be 1/2 of the external force F 2 applied to the lower side of the bending stress the additional jig 15b.
In addition, the bending stress is applied to the lower bending stress applying jig 15b just in the center of the two upper bending stress applying jigs 15a.
Are set in such a manner that the predetermined cutting line S comes to the position of the lower bending stress applying jig 15b.
Is the maximum at the scheduled cutting line S on the incident side of. In addition, the planned cutting line S in FIG. 1 is a direction perpendicular to the paper surface.
【００１５】この時の曲げ応力は、ウェハ１２が曲げ破
壊しない程度に設定される。従って、実際には図１
（ｂ）に示す程までにはウェハ１２は変形することはな
く、図ではかなり誇張して示してある。The bending stress at this time is set to such an extent that the wafer 12 does not bend and break. Therefore, FIG.
The wafer 12 is not deformed to the extent shown in FIG. 3B, and is considerably exaggerated in the drawing.
【００１６】レーザビーム１０は図１（ｂ）に示すよう
に集光レンズ１１により集光され、半導体チップ用のウ
エハ（以下、単にウェハという）１２の割断予定線Ｓに
照射される。ここで使用するレーザビーム１０として
は、例えばＹＡＧレーザ発振器から発振されるものと
し、さらにそのレーザ発振器もしくは加工対象であるウ
ェハ１２のうちいずれか一方をウェハ１２の平面内（Ｘ
−Ｙ平面内）で移動させ、レーザビーム１０をウエハ１
２に対して相対的に走査させるＸＹテーブル等の移動手
段を備えることとする。The laser beam 10 is condensed by a condensing lens 11 as shown in FIG. 1 (b), and is applied to a planned cutting line S of a semiconductor chip wafer (hereinafter simply referred to as a wafer) 12. The laser beam 10 used here is, for example, oscillated from a YAG laser oscillator, and one of the laser oscillator and the wafer 12 to be processed is placed in the plane of the wafer 12 (X
−in the Y plane), and the laser beam 10 is
A moving means such as an XY table for scanning relative to 2 is provided.
【００１７】上記のようなレーザビーム１０の照射によ
り熱応力が生じ、曲げ応力付加用治具１５ａ，１５ｂに
より予め付与しておいた曲げ応力と合成され、曲げ応力
が最大となっている割断予定線Ｓの方向に沿って亀裂が
進展して行く。A thermal stress is generated by the irradiation of the laser beam 10 as described above, and is combined with a bending stress previously applied by the bending stress applying jigs 15a and 15b, so that the cutting stress at which the bending stress is maximum is obtained. The crack grows along the direction of the line S.
【００１８】図２は、本実施形態の加工対象であるウェ
ハ１２を示す図である。ウェハ１２には複数の半導体チ
ップが行列状に形成されており、この行列状に並んだウ
ェハ１２から半導体装置の元となる半導体チップが切り
出される。この半導体チップの切り出し時における境界
が割断予定線Ｓであり、この場合は互いに直交する格子
状（Ｘ方向及びＹ方向）となる。FIG. 2 is a view showing a wafer 12 to be processed in the present embodiment. A plurality of semiconductor chips are formed on the wafer 12 in a matrix, and a semiconductor chip serving as a source of a semiconductor device is cut out from the wafers 12 arranged in the matrix. The boundary at the time of cutting out the semiconductor chip is the planned cutting line S, and in this case, it becomes a lattice shape (X direction and Y direction) orthogonal to each other.
【００１９】このようなウェハ１２を、図１で示した曲
げ応力付加用治具１５ａ，１５ｂで把持し、曲げ応力を
付与した状態で割断予定線Ｓにレーザビーム１０を集光
しながら照射し、レーザビーム１０の照射位置を割断予
定線Ｓに沿って移動させる。これによって、前述のよう
に曲げ応力が最大となる割断予定線Ｓに沿って亀裂が誘
導され、進展し、１ラインの割断が完了する。そして、
この１ラインの操作と同様の操作をＸ方向及びＹ方向に
おける全ての割断予定線Ｓについて行う。この時、１ラ
イン分の割断が終了する毎に、曲げ応力付加用治具１５
ａ，１５ｂの保持位置は次のラインに沿った位置に変更
する。これによって全ての割断が終了し、半導体チップ
を得ることができる。但し、曲げ応力付加用治具１５
ａ，１５ｂの位置を上記のように１ライン分の割断終了
毎に変更する方式ではなく、予め複数のラインに沿った
形状の治具を使用する方式としてもよい。Such a wafer 12 is gripped by the bending stress applying jigs 15a and 15b shown in FIG. 1, and irradiated with the laser beam 10 while condensing the laser beam 10 on the planned cutting line S in a state where the bending stress is applied. Then, the irradiation position of the laser beam 10 is moved along the planned cutting line S. As a result, as described above, a crack is induced along the scheduled cutting line S at which the bending stress is maximized, propagates, and the cutting of one line is completed. And
The same operation as the one-line operation is performed for all the planned cutting lines S in the X direction and the Y direction. At this time, every time the cutting of one line is completed, the bending stress applying jig 15
The holding positions of a and 15b are changed to positions along the next line. As a result, all cutting is completed, and a semiconductor chip can be obtained. However, the bending stress applying jig 15
Instead of changing the positions of a and 15b each time the cutting of one line is completed as described above, a method of using a jig shaped along a plurality of lines in advance may be used.
【００２０】以上のような本実施形態によれば、曲げ応
力付加用治具１５ａ，１５ｂにより割断予定線Ｓで最大
となる曲げ応力を付与し、その状態を保ちながら割断予
定線Ｓにレーザビーム１０を照射するので、曲げ応力に
レーザビーム１０の照射による熱応力が合成され、割断
予定線Ｓの方向に沿って確実に亀裂が進展する。従っ
て、予め割断予定線沿った溝を形成する等の新たな工程
を必要とせず、確実に亀裂を誘導することができる。According to the present embodiment as described above, the bending stress is applied to the expected cutting line S by the bending stress applying jigs 15a and 15b. Since the irradiation of the laser beam 10 is performed, the thermal stress generated by the irradiation of the laser beam 10 is combined with the bending stress, so that the crack is reliably propagated along the direction of the scheduled cutting line S. Therefore, a crack can be reliably induced without requiring a new step such as forming a groove along the planned cutting line in advance.
【００２１】次に、本発明の第２の実施形態について図
３により説明する。但し、図３において図１と同等の部
材には同じ符号を付してある。ウェハ１２は、図３に示
すように、上面（レーザビーム１０の入射側）および下
面（レーザビーム１０の反入射側）から、それぞれ引張
り応力付加用治具１６ａ，１６ｂにより把持され、それ
ぞれの引張り曲げ応力付加用治具１６ａ，１６ｂにより
引張り力（外力）Ｆ3が付与される。この時、ウエハ１
２に加わる引張り力は２Ｆ3となるが、この力２Ｆ3は、
それによってウェハ１２ないに生じる引張り応力がウエ
ハ１２を破壊しない程度に設定される。そして、この引
張り応力を付与した状態で前述の実施形態と同様にレー
ザビーム１０を照射する。Next, a second embodiment of the present invention will be described with reference to FIG. However, in FIG. 3, the same members as those in FIG. 1 are denoted by the same reference numerals. As shown in FIG. 3, the wafer 12 is gripped from the upper surface (the incident side of the laser beam 10) and the lower surface (the opposite side of the laser beam 10) by the jigs 16a and 16b for applying tensile stress. bending stressing jig 16a, tensile force by 16b (external force) F 3 is applied. At this time, wafer 1
The tensile force applied to 2 is 2F 3 , but this force 2F 3
Accordingly, the tensile stress generated in the wafer 12 is set to such an extent that the wafer 12 is not broken. Then, in a state where the tensile stress is applied, the laser beam 10 is irradiated similarly to the above-described embodiment.
【００２２】この場合には、引張り応力が加わっている
範囲ではその引張り応力値はほぼ均一であり、割断予定
線Ｓに沿う部分が必ずしも前述の実施形態のように最大
応力とはならないが、この時発生する亀裂は上記一様な
引張り応力場に垂直な方向、即ち図３の紙面に垂直な方
向に発生すると考えられるので、レーザビーム１０の照
射位置を割断予定線Ｓに沿って移動させれば、亀裂を確
実に割断予定線Ｓに沿って誘導することができる。割断
予定線Ｓは、引張り応力が均一な範囲内でを任意に設定
可能であり、レーザビーム１０の照射位置をその割断予
定線Ｓに合わせればよい。In this case, the value of the tensile stress is substantially uniform in the range where the tensile stress is applied, and the portion along the expected cutting line S does not always have the maximum stress as in the above-described embodiment. Since it is considered that the cracks that occur at the time are generated in a direction perpendicular to the uniform tensile stress field, that is, a direction perpendicular to the plane of FIG. 3, the irradiation position of the laser beam 10 is moved along the planned cutting line S. If this is the case, the crack can be reliably guided along the planned cutting line S. The planned cutting line S can be set arbitrarily within a range where the tensile stress is uniform, and the irradiation position of the laser beam 10 may be adjusted to the planned cutting line S.
【００２３】以上のような本実施形態によっても、前述
の第１の実施形態と同様の効果が得られる。According to the present embodiment as described above, the same effect as in the first embodiment can be obtained.
【００２４】なお、上記では、レーザビーム１０の照射
位置を亀裂の進展に合わせて移動させることとしたが、
レーザビームの照射位置をスキャナ等を用いて高速に割
断予定線Ｓに沿って走査させる特開平６−３９５７２号
公報に記載の技術を利用することも可能である。この場
合は、ＸＹテーブル等の移動手段によりレーザビーム１
０をウエハ１２に対して相対的に走査させつつ亀裂を進
展させるのではなく、曲げ応力が最大となる割断予定線
Ｓに沿ってレーザビームを高速で走査させることで一気
に割断が完了し、高速な加工が可能である。In the above description, the irradiation position of the laser beam 10 is moved according to the progress of the crack.
It is also possible to use the technique described in JP-A-6-39572, in which the irradiation position of the laser beam is scanned at high speed along the planned cutting line S using a scanner or the like. In this case, the laser beam 1 is moved by moving means such as an XY table.
0 is relatively scanned with respect to the wafer 12 and the crack is not propagated, but the laser beam is scanned at a high speed along the planned cutting line S where the bending stress is maximum, whereby the cutting is completed at a stretch and the high speed is achieved. Processing is possible.
【００２５】また、レーザビームを走査させるのではな
く、断面が線状のレーザビームを照射することにより割
断してもよい。断面が線状のレーザビームは、例えばシ
リンドリカルレンズ等によってを得ることができる。こ
の場合には、高いパワー密度を必要とするものの、一回
のレーザビーム照射で短時間に割断を完了することがで
き、能率よく加工できる。Instead of scanning with a laser beam, the laser beam may be cut by irradiating a laser beam having a linear cross section. A laser beam having a linear cross section can be obtained by, for example, a cylindrical lens. In this case, although a high power density is required, the cutting can be completed in a short time by one laser beam irradiation, and the processing can be performed efficiently.
【００２６】また、前述の曲げ応力付与の方式や、引張
り応力付与の方式は第１および第２の実施形態で説明し
た方式に限定されるものではない。さらに、上記では、
脆性材料として半導体チップ用のウェハを使用した場合
について説明したが、それ以外の脆性材料、例えばガラ
ス、石英、あるいはセラミック等にも広く応用が可能で
ある。The method of applying the bending stress and the method of applying the tensile stress are not limited to the methods described in the first and second embodiments. Furthermore, in the above,
Although the case where a semiconductor chip wafer is used as the brittle material has been described, the present invention can be widely applied to other brittle materials such as glass, quartz, and ceramic.
【００２７】[0027]
【発明の効果】本発明によれば、割断予定線に沿って応
力を付与しておき、その状態を保ちながらその割断予定
線にレーザビームを照射するので、予め付与しておいた
応力に、レーザビーム照射による熱応力が合成され、割
断予定線の方向に沿って確実に亀裂が進展する。従っ
て、予め割断予定線沿った溝を形成する等の新たな工程
を必要とせず、確実に亀裂を誘導することができる。According to the present invention, the stress is applied along the planned cutting line, and the laser beam is applied to the planned cutting line while maintaining the state. Thermal stress due to laser beam irradiation is synthesized, and cracks are surely propagated along the direction of the scheduled cutting line. Therefore, a crack can be reliably induced without requiring a new step such as forming a groove along the planned cutting line in advance.
【図１】本発明の第１の実施形態による脆性材料の割断
方法の概要を示す図である。FIG. 1 is a diagram illustrating an outline of a method for cutting a brittle material according to a first embodiment of the present invention.
【図２】加工対象であるウェハを示す図である。FIG. 2 is a diagram showing a wafer to be processed.
【図３】本発明の第２の実施形態による脆性材料の割断
方法の概要を示す図である。FIG. 3 is a diagram illustrating an outline of a method for cutting a brittle material according to a second embodiment of the present invention.
【図４】ウェハ上の割断予定線に沿って予め溝を形成し
ておき、その後レーザビームを照射して割断する従来技
術を説明する図である。FIG. 4 is a diagram for explaining a conventional technique in which a groove is formed in advance along a line to be cut on a wafer and then cut by irradiating a laser beam.
１０ レーザビーム １１ 集光レンズ １２ ウェハ １５ａ，１５ｂ 曲げ応力付加用治具 １６ａ，１６ｂ 引張り応力付加用治具 Ｓ 割断予定線 Ｆ1，Ｆ2 外力 Ｆ3 引張り力（外力）10 the laser beam 11 converging lens 12 wafers 15a, 15b bending stressing jig 16a, 16b tensile stressing jig S planned cutting line F 1, F 2 external force F 3 tensile force (external force)
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/304 ３１１ Ｈ０１Ｌ 21/304 ３１１Ｚ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification number Agency reference number FI Technical display location H01L 21/304 311 H01L 21/304 311Z
Claims (3)
した脆性材料の割断方法において、割断予定線に沿って
応力を付与した状態で前記割断予定線に前記レーザビー
ムを照射し、前記割断予定線に沿う応力と前記レーザビ
ーム照射による熱応力とによって前記脆性材料を割断す
ることを特徴とする脆性材料の割断方法。1. A method for cleaving a brittle material using thermal stress caused by laser beam irradiation, wherein the laser beam is irradiated to the planned cleavage line while applying stress along the planned cleavage line, and Cleaving the brittle material by a stress along the line and a thermal stress by the laser beam irradiation.
いて、前記割断予定線に沿って付与する応力は、前記レ
ーザビームの入射側の前記割断予定線で最大となる曲げ
応力であることを特徴とする脆性材料の割断方法。2. The method of cutting a brittle material according to claim 1, wherein the stress applied along the planned cutting line is a bending stress that is the maximum at the planned cutting line on the incident side of the laser beam. Characteristic method of cutting brittle materials.
いて、前記割断予定線に沿って付与する応力は、前記割
断予定線に垂直な方向に付与される引張り応力であるこ
とを特徴とする脆性材料の割断方法。3. The method for cutting a brittle material according to claim 1, wherein the stress applied along the line to be cut is a tensile stress applied in a direction perpendicular to the line to cut. How to cut brittle materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8228855A JPH1071483A (en) | 1996-08-29 | 1996-08-29 | How to cut brittle materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8228855A JPH1071483A (en) | 1996-08-29 | 1996-08-29 | How to cut brittle materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1071483A true JPH1071483A (en) | 1998-03-17 |
Family
ID=16882943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8228855A Pending JPH1071483A (en) | 1996-08-29 | 1996-08-29 | How to cut brittle materials |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1071483A (en) |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001326194A (en) * | 2000-05-16 | 2001-11-22 | Disco Abrasive Syst Ltd | Method of dividing brittle substrate |
| KR100693933B1 (en) | 2006-03-24 | 2007-03-12 | 케이 이엔지(주) | Glass cutting device with synchronous plate and laser generator |
| KR100693934B1 (en) | 2006-03-24 | 2007-03-12 | 케이 이엔지(주) | Glass cutting device equipped with bending part and cutting method of glass using the same |
| KR100693947B1 (en) | 2006-05-17 | 2007-03-12 | 케이 이엔지(주) | Laser cutting method of large glass |
| JP2007191363A (en) * | 2006-01-20 | 2007-08-02 | Toshiba Corp | Laser cleaving device, cleaving method |
| JPWO2006073098A1 (en) * | 2005-01-05 | 2008-06-12 | Thk株式会社 | Work breaking method and device, scribing and breaking method, and scribing device with break function |
| US7396742B2 (en) | 2000-09-13 | 2008-07-08 | Hamamatsu Photonics K.K. | Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object |
| US7566635B2 (en) | 2002-03-12 | 2009-07-28 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US7655881B2 (en) * | 2001-06-15 | 2010-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device |
| US8058103B2 (en) | 2003-09-10 | 2011-11-15 | Hamamatsu Photonics K.K. | Semiconductor substrate cutting method |
| JP4818120B2 (en) * | 2004-10-13 | 2011-11-16 | 三星ダイヤモンド工業株式会社 | A scribing method for a brittle material substrate, a scribing apparatus, and a cutting system for the brittle material substrate. |
| CN102343481A (en) * | 2010-07-23 | 2012-02-08 | 三星钻石工业股份有限公司 | Laser machining device, machining method of workpiece to be machined and separating method of the workpiece to be machined |
| JP2012045830A (en) * | 2010-08-27 | 2012-03-08 | Mitsuboshi Diamond Industrial Co Ltd | Laser cutting apparatus |
| JP2012056229A (en) * | 2010-09-10 | 2012-03-22 | Mitsuboshi Diamond Industrial Co Ltd | Laser dividing apparatus |
| JP2012176443A (en) * | 2012-06-15 | 2012-09-13 | Mitsuboshi Diamond Industrial Co Ltd | Laser beam machining apparatus, method for machining workpiece and method for dividing workpiece |
| JP2013066990A (en) * | 2011-09-26 | 2013-04-18 | Nissan Motor Co Ltd | Device for manufacturing magnet body for magnetic field pole and its manufacturing method |
| JP2013179755A (en) * | 2012-02-28 | 2013-09-09 | Nissan Motor Co Ltd | Method of manufacturing magnet piece constituting magnet body for field pole |
| US8865566B2 (en) | 2002-12-03 | 2014-10-21 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
| US8969752B2 (en) | 2003-03-12 | 2015-03-03 | Hamamatsu Photonics K.K. | Laser processing method |
| JP2016108186A (en) * | 2014-12-05 | 2016-06-20 | 川崎重工業株式会社 | Method and apparatus for cutting glass plate |
| CN106630558A (en) * | 2011-08-18 | 2017-05-10 | 康宁股份有限公司 | Methods of severing a glass ribbon |
-
1996
- 1996-08-29 JP JP8228855A patent/JPH1071483A/en active Pending
Cited By (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001326194A (en) * | 2000-05-16 | 2001-11-22 | Disco Abrasive Syst Ltd | Method of dividing brittle substrate |
| JP4697823B2 (en) * | 2000-05-16 | 2011-06-08 | 株式会社ディスコ | Method for dividing brittle substrate |
| US7547613B2 (en) | 2000-09-13 | 2009-06-16 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US8946589B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Method of cutting a substrate, method of cutting a wafer-like object, and method of manufacturing a semiconductor device |
| US8969761B2 (en) | 2000-09-13 | 2015-03-03 | Hamamatsu Photonics K.K. | Method of cutting a wafer-like object and semiconductor chip |
| US8946591B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Method of manufacturing a semiconductor device formed using a substrate cutting method |
| US7396742B2 (en) | 2000-09-13 | 2008-07-08 | Hamamatsu Photonics K.K. | Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object |
| US8946592B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US8927900B2 (en) | 2000-09-13 | 2015-01-06 | Hamamatsu Photonics K.K. | Method of cutting a substrate, method of processing a wafer-like object, and method of manufacturing a semiconductor device |
| US9837315B2 (en) | 2000-09-13 | 2017-12-05 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US7592238B2 (en) | 2000-09-13 | 2009-09-22 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US7615721B2 (en) | 2000-09-13 | 2009-11-10 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US7626137B2 (en) | 2000-09-13 | 2009-12-01 | Hamamatsu Photonics K.K. | Laser cutting by forming a modified region within an object and generating fractures |
| US8933369B2 (en) | 2000-09-13 | 2015-01-13 | Hamamatsu Photonics K.K. | Method of cutting a substrate and method of manufacturing a semiconductor device |
| US8937264B2 (en) | 2000-09-13 | 2015-01-20 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US10796959B2 (en) | 2000-09-13 | 2020-10-06 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US7655881B2 (en) * | 2001-06-15 | 2010-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device |
| US9287177B2 (en) | 2002-03-12 | 2016-03-15 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9543256B2 (en) | 2002-03-12 | 2017-01-10 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US11424162B2 (en) | 2002-03-12 | 2022-08-23 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US10622255B2 (en) | 2002-03-12 | 2020-04-14 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US10068801B2 (en) | 2002-03-12 | 2018-09-04 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9711405B2 (en) | 2002-03-12 | 2017-07-18 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US7566635B2 (en) | 2002-03-12 | 2009-07-28 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9553023B2 (en) | 2002-03-12 | 2017-01-24 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9548246B2 (en) | 2002-03-12 | 2017-01-17 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9142458B2 (en) | 2002-03-12 | 2015-09-22 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9543207B2 (en) | 2002-03-12 | 2017-01-10 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US8889525B2 (en) | 2002-03-12 | 2014-11-18 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US8865566B2 (en) | 2002-12-03 | 2014-10-21 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
| US8969752B2 (en) | 2003-03-12 | 2015-03-03 | Hamamatsu Photonics K.K. | Laser processing method |
| US8058103B2 (en) | 2003-09-10 | 2011-11-15 | Hamamatsu Photonics K.K. | Semiconductor substrate cutting method |
| JP4818120B2 (en) * | 2004-10-13 | 2011-11-16 | 三星ダイヤモンド工業株式会社 | A scribing method for a brittle material substrate, a scribing apparatus, and a cutting system for the brittle material substrate. |
| JPWO2006073098A1 (en) * | 2005-01-05 | 2008-06-12 | Thk株式会社 | Work breaking method and device, scribing and breaking method, and scribing device with break function |
| JP5037138B2 (en) * | 2005-01-05 | 2012-09-26 | Ｔｈｋ株式会社 | Work breaking method and device, scribing and breaking method, and scribing device with break function |
| KR100892390B1 (en) | 2006-01-20 | 2009-04-10 | 가부시끼가이샤 도시바 | Laser cutting device and cutting method |
| JP2007191363A (en) * | 2006-01-20 | 2007-08-02 | Toshiba Corp | Laser cleaving device, cleaving method |
| JP4675786B2 (en) * | 2006-01-20 | 2011-04-27 | 株式会社東芝 | Laser cleaving device, cleaving method |
| KR100693934B1 (en) | 2006-03-24 | 2007-03-12 | 케이 이엔지(주) | Glass cutting device equipped with bending part and cutting method of glass using the same |
| KR100693933B1 (en) | 2006-03-24 | 2007-03-12 | 케이 이엔지(주) | Glass cutting device with synchronous plate and laser generator |
| KR100693947B1 (en) | 2006-05-17 | 2007-03-12 | 케이 이엔지(주) | Laser cutting method of large glass |
| KR101330608B1 (en) * | 2010-07-23 | 2013-11-18 | 미쓰보시 다이야몬도 고교 가부시키가이샤 | Laser processing apparatus, processing method for a workpiece, and dividing method for a workpiece |
| CN102343481A (en) * | 2010-07-23 | 2012-02-08 | 三星钻石工业股份有限公司 | Laser machining device, machining method of workpiece to be machined and separating method of the workpiece to be machined |
| JP2012024816A (en) * | 2010-07-23 | 2012-02-09 | Mitsuboshi Diamond Industrial Co Ltd | Laser beam machining device, method for machining workpiece, and method for dividing the workpiece |
| KR101369211B1 (en) * | 2010-08-27 | 2014-03-04 | 미쓰보시 다이야몬도 고교 가부시키가이샤 | Laser cutting device |
| JP2012045830A (en) * | 2010-08-27 | 2012-03-08 | Mitsuboshi Diamond Industrial Co Ltd | Laser cutting apparatus |
| TWI507265B (en) * | 2010-08-27 | 2015-11-11 | Mitsuboshi Diamond Ind Co Ltd | Laser cutting apparatus |
| JP2012056229A (en) * | 2010-09-10 | 2012-03-22 | Mitsuboshi Diamond Industrial Co Ltd | Laser dividing apparatus |
| CN106630558A (en) * | 2011-08-18 | 2017-05-10 | 康宁股份有限公司 | Methods of severing a glass ribbon |
| JP2013066990A (en) * | 2011-09-26 | 2013-04-18 | Nissan Motor Co Ltd | Device for manufacturing magnet body for magnetic field pole and its manufacturing method |
| JP2013179755A (en) * | 2012-02-28 | 2013-09-09 | Nissan Motor Co Ltd | Method of manufacturing magnet piece constituting magnet body for field pole |
| JP2012176443A (en) * | 2012-06-15 | 2012-09-13 | Mitsuboshi Diamond Industrial Co Ltd | Laser beam machining apparatus, method for machining workpiece and method for dividing workpiece |
| JP2016108186A (en) * | 2014-12-05 | 2016-06-20 | 川崎重工業株式会社 | Method and apparatus for cutting glass plate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH1071483A (en) | How to cut brittle materials | |
| CN100407377C (en) | Cutting method of semiconductor substrate | |
| US8212180B2 (en) | Method for severing brittle flat materials by laser beam with previously produced traces | |
| CN100466184C (en) | wafer processing method | |
| CN100466185C (en) | Laser processing method and processing object | |
| KR102282858B1 (en) | Method of processing a substrate | |
| WO2007074823A1 (en) | Laser beam machining method and semiconductor chip | |
| WO2006101091A1 (en) | Laser machining method | |
| WO2008035610A1 (en) | Laser processing method | |
| KR20020088296A (en) | Method and Apparatus for cutting non-metal substrate using a laser beam | |
| WO2007058262A1 (en) | Laser processing method | |
| WO2007004607A1 (en) | Method for cutting workpiece | |
| WO2007020822A1 (en) | Laser processing method | |
| WO2006070825A1 (en) | Method for cutting brittle material substrate and substrate cutting system | |
| US7341926B2 (en) | Wafer dividing method | |
| KR20080074856A (en) | Laser processing method | |
| JP2700136B2 (en) | How to cut brittle materials | |
| CN108335974A (en) | Substrate processing method using same | |
| JP3660741B2 (en) | Method for manufacturing electronic circuit device | |
| JP7210292B2 (en) | Wafer generation method | |
| US6951800B2 (en) | Method of making semiconductor device that has improved structural strength | |
| JP2001058281A (en) | Scribing method using laser beam | |
| JPH08197271A (en) | Method for cracking brittle material and device for cracking brittle material | |
| JP2019153731A (en) | Wafer processing method | |
| JPH04167985A (en) | Method for cutting off wafer |