JPH1053500A - Film-forming apparatus and film-forming method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformize the thickness of a thin film and increase the sharpness of the variation of the composition at the interface of the thin film. SOLUTION: A chamber 11 for heating and reacting a raw material gas contains a gas-feeding part 12 to feed the raw material gas from the outside of the chamber 11 into the chamber 11 and a substrate holder 14 placed opposite to the gas-feeding port 12a of the gas feeding part 12 and holding a film-growing substrate 13. The apparatus is further provided with a rotary member 16 composed of a high-speed rotary disk 16a having a ring-shaped flat high-speed rotation face and positioned outside of the substrate holder 14, a concave covering part 16b integrated with the inner circumference of the high-speed rotary disk 16a, covering the substrate holder 14 and a heater 15 and having an opening at the center of the bottom part and a cylindrical rotary shaft 16c integrally formed in such a manner as to be extended downward from the circumference of the opening of the covering part 16b and hermetically supported by a bearing 11a on the bottom of the chamber 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a film forming apparatus and a film forming method for forming an insulating film, a semiconductor crystal thin film and the like on a substrate.

[0002]

2. Description of the Related Art A high-speed rotary type vapor phase growth apparatus which is a conventional film forming apparatus will be described with reference to the drawings.

FIG. 16A shows a case where a substrate holder is rotated.
It is a perspective view which shows the outline of the conventional high speed rotation type vapor phase growth apparatus. As shown in FIG. 16A, the present vapor phase growth apparatus is provided with a reaction furnace 101 for heating and reacting a raw material gas as a raw material for film formation, and an upper part of the reaction furnace 101. A gas inlet 102 for introducing a source gas, and a substrate holder 1 provided to face the gas inlet 102
03. A plurality of substrates 105 are held at the outer edge of the holder surface of the substrate holder 103, and the substrate holder 10
Reference numeral 3 rotates at a high speed with the rotation of a rotating shaft 104 extending vertically downward from the center of the holder surface to the holder surface.

[0004] As shown in FIG.
02, a raw material gas 106 is introduced into the reaction furnace 101,
The light diffuses toward the holder surface of the substrate holder 103. Since the substrate holder 103 is rotating at a high speed of 600 rpm or more, the outer peripheral portion of the holder surface has a higher speed than the inner peripheral portion thereof. It is strongly pulled radially outward of the holder surface. As a result, the pressure at the center of the holder surface is lower than that at the outer periphery, so that a new source gas 106 is supplied to the center of the holder surface. Due to this so-called pump effect, a uniform thin film grows on each substrate 105.

As described above, according to the vapor phase growth apparatus in which the substrate holder 103 holding the substrate 105 rotates at high speed, the source gas 106 is sucked in the direction of the rotation axis by the substrate holder 103 rotating at high speed, and then the substrate holder 103 is rotated. An effect of blowing out around 103 is brought about. As a result, the substrate holder 10
A thin and uniform crystal grows on each of the substrates 105 on the substrate 3 and the temperature of the supply of the raw material and the reaction become uniform, so that a uniform thin film can be formed on each of the substrates 105.

However, in the conventional high-speed rotary type vapor phase growth apparatus, since the substrate 105 is rotating at a high speed, a large centrifugal force is applied to the substrate 105, so that each substrate 105 comes off from the substrate holder 103, and There was a risk of scattering outside the holder 103 in the radial direction. Also, a large number of substrates 1
Substrate holder 1 with a large diameter for simultaneous film formation on
Since the substrate holder 103 is required, the weight of the substrate holder 103 is increased, so that high-speed rotation is mechanically difficult. Further, in order to improve the uniformity of the film thickness, it is necessary to rotate each substrate 105 itself, but it is technically difficult to rotate each substrate 103 while rotating the substrate holder 103 at high speed. .

[0007] FIG.
No. 5 discloses a first improved high-speed rotation type vapor phase growth apparatus. As shown in FIG. 17A, in the present vapor deposition apparatus, instead of rotating the substrate holder 103, a rotation is provided at the center of the holder surface of the substrate holder 103 and extends vertically downward with respect to the holder surface. Axis 10
4, a high-speed rotating plate 10 that rotates in the same plane as the holder surface
7, the high-speed rotation plate 107 rotates at a high speed, so that the pressure at the center of the holder surface becomes lower than the pressure at the outer edge, so that a new source gas 106 is supplied to the center of the holder surface. . Since each of the substrates 105 does not rotate at a high speed, there is no danger that the substrates 105 will fall off the holder surface and scatter. Further, since the diameter of the rotating plate 107 is reduced, the substrate holder 103 is not required to be formed simultaneously on a large number of substrates 105. There is no need to consider weight.

FIG. 18 shows a second improved high-speed rotation type vapor phase growth apparatus disclosed in Japanese Patent Application Laid-Open No. Hei 4-6840. As shown in FIG. 18, a reaction furnace 101 is provided on a mounting table 109 and heats and reacts a source gas to be formed into a film. A gas inlet 102 provided at an upper portion of the reaction furnace 101 to introduce a raw material gas into the reaction furnace 101; a gas exhaust pipe 101a provided at a side wall of the reaction furnace 101 to exhaust a reacted gas; There is provided a substrate holder 103 provided inside to face the gas inlet 102 and holding a plurality of substrates 105 for growing a crystal film made of a source gas. The substrate holder 103 is heated to a film forming temperature by a high-frequency induction coil 110 provided on a side wall of the reaction furnace 101. A plurality of rotating blades 108 are provided on the outer peripheral surface of the substrate holder 103, and the plurality of rotating blades 1 are provided by a rotating shaft 104 extending vertically downward from the center of the holder surface to the holder surface.
08 and rotate at high speed. Since the raw material gas is guided radially outward of the holder surface by the rotating blades 108, unnecessary raw material gas can be exhausted from the gas exhaust pipe 101a. As a result, the layered source gas flow 10
Since 6 is generated, the in-plane uniformity of the crystal can be improved.

[0009]

However, the first improved high-speed rotary type vapor phase epitaxy apparatus shown in FIG.
As shown in FIG. 7, the gas formed by the high-speed rotating plate 107 is heated on the high-temperature substrate 105 to become an ascending airflow,
Since 06a is formed, when the source gas is switched, the source gas before switching comes closer to the substrate 105 again. Therefore, there is a problem that it is difficult to obtain good composition steepness at the interface of a film of a semiconductor or the like grown on the substrate 105.

In the second improved high-speed rotary type vapor phase growth apparatus, the rotating blades 108 are rotated by the viscous resistance of the gas in order to rotate the rotating blades 108 in the raw material gas. Since the vibration is transmitted to the substrate holder 103 formed integrally with the rotary blade 108, the substrate holder 103 vibrates. As a result, the substrate 105 held by the substrate holder 103 also vibrates, so that the substrate 105 comes off the substrate holder 103 due to the vibration, and the substrate holder 10
No. 3 had a problem that it could be scattered outward in the radial direction. For example, even if the substrate 105 does not scatter, good growth of a crystal layer cannot be expected in a state where vibration is generated in the substrate holder 103.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional problems at once, to make the thickness of a thin film to be formed uniform, and to improve the composition steepness at the interface of the thin film. I do.

[0012]

According to a first aspect of the present invention, there is provided a reaction furnace for heating and reacting a supplied raw material gas, and a reaction furnace provided inside the reaction furnace and having a substrate holder surface mounted on a substrate holder surface. And a gas supply means for supplying the source gas to the substrate held on the substrate holder surface of the substrate holder, wherein a crystal film made of the source gas is grown on the substrate. On the premise of a film apparatus, a rotating member is provided outside the substrate holder and has a high-speed rotating surface that rotates at high speed around the substrate holder.

According to the first aspect of the present invention, since the rotating member is provided outside the substrate holder and has a high-speed rotating surface that rotates around the substrate holder at a high speed, the heavy substrate holder can be rotated at a high speed. Since the pump effect can be obtained without causing the flow, the flow of the raw material gas is sucked in the direction of the rotation axis and then blown out in the radial direction of the substrate holder.

Further, since the substrate holder itself is not rotated at a high speed, the substrate held by the substrate holder does not scatter. Further, since the substrate holder and the rotating member are not in contact with each other, the high-speed rotating surface rotates at high speed and receives the viscous resistance of the raw material gas. Even if the high-speed rotating surface vibrates, the substrate holder does not vibrate.

According to a second aspect of the present invention, in the configuration of the first aspect, the rotating member is a plate-like body provided below the substrate holder and having the high-speed rotating surface parallel to the substrate holder surface. The configuration is added.

According to the second aspect of the present invention, since the rotating member is a plate-like body provided below the substrate holder and having a high-speed rotating surface parallel to the substrate holder surface, the rotating member has a simple shape. Can be.

According to a third aspect of the present invention, in addition to the first or second aspect, a configuration is provided in which the high-speed rotation surface is substantially on the same plane as the substrate holder surface.

According to the third aspect of the present invention, since the high-speed rotation surface rotates on substantially the same plane as the substrate holder surface, the gas flow from the outer edge of the substrate holder surface toward the high-speed rotation surface becomes smooth, so that the pump effect is obtained. Can be reliably obtained.

According to a fourth aspect of the present invention, in the configuration of the first to third aspects, there is provided a driving means for rotating the rotation member, the driving means having a rotation axis rotating about an axis different from the rotation axis of the high-speed rotation surface. The additional configuration is added.

According to the fourth aspect of the present invention, the rotating member is provided with a driving means for rotating the rotating member, the rotating member being provided with a rotating shaft which rotates about an axis different from the rotating shaft of the high-speed rotating surface. The rotating shaft is shifted from the center of the substrate holder.

According to a fifth aspect of the present invention, in the configuration of the first to fourth aspects, the rotating member is provided so as to extend outward from the high-speed rotation surface in parallel with the high-speed rotation surface, and extends along the high-speed rotation surface. The structure further includes a plurality of blade members for guiding the flowing source gas below the substrate holder.

According to a fifth aspect of the present invention, a plurality of blades are provided so as to extend from the high-speed rotation surface of the rotary member to the outside in parallel with the high-speed rotation surface and guide the raw material gas flowing along the high-speed rotation surface to below the substrate holder. Since the member is further provided, the reacted gas quickly moves away from the substrate holder surface.

According to a sixth aspect of the present invention, in the structure of the first to fifth aspects, the rotating member is provided perpendicular to the high-speed rotation surface, and guides the source gas outward along the high-speed rotation surface. A configuration further including a plurality of blade members is added.

According to the sixth aspect of the present invention, there is further provided a plurality of blade members which are provided perpendicular to the high-speed rotation surface of the rotating member and guide the source gas outward along the high-speed rotation surface. Even if the diameter of the surface is reduced, the pump effect is not impaired.

According to a seventh aspect of the present invention, in the structure of the first to sixth aspects, the raw material gas is provided on the plurality of blade members in parallel with the high-speed rotation surface and flows above the high-speed rotation surface. The configuration further includes a plate-shaped member that guides the high-speed rotation surface to the outside.

According to the seventh aspect of the present invention, there is further provided a plate-shaped member which is provided on the plurality of blade members in parallel with the high-speed rotation surface and guides a raw material gas flowing above the high-speed rotation surface to the outside of the high-speed rotation surface. With this arrangement, a gas flow that smoothly flows in the radial direction on the upper surface of the substrate holder can be generated.

The invention according to claim 8 is the one in which the structure according to any one of claims 1 to 7 is further provided with a structure further provided with rotation means provided on the substrate holder and rotating the substrate held by the substrate holder. It is.

According to a ninth aspect of the present invention, in addition to the configuration of the first to eighth aspects, a configuration further including a rotation unit for rotating the substrate holder at a low speed is added.

According to a tenth aspect of the present invention, there is provided a reaction furnace for heating and reacting a supplied source gas, and a circular substrate provided inside the reaction furnace and holding the substrate on a substrate holder surface. A holder, gas supply means for supplying the source gas to the substrate held on the substrate holder surface of the substrate holder, and high-speed rotation provided outside the substrate holder and rotating at high speed around the substrate holder A test substrate having the same shape as the substrate holder, using a film forming apparatus having a ring-shaped rotating member having a surface and a film forming method for growing a crystal film made of the source gas on the substrate. The test substrate is held by holding a test substrate in a holder and growing a crystal film on the test substrate in a state where a rotating member having a test high-speed rotation surface having the same shape as the high-speed rotation surface is rotated. Hol A ratio of the radius of the outer periphery of the test high-speed rotation surface to the radius of the, and a correlation creation step of obtaining a correlation between the rotation speed of the test high-speed rotation surface where the crystal film grows to a uniform thickness on the substrate, A radius determining step of determining the radius of the substrate holder and the radius of the outer periphery of the high-speed rotating surface; and, based on the correlation, the ratio of the radius of the outer periphery of the high-speed rotating surface to the radius of the substrate holder. A rotation speed determining step for determining the rotation speed of the substrate, and rotating the high-speed rotation surface at the rotation speed determined in the rotation speed determining step, thereby growing a crystal film on the substrate held by the substrate holder. And a film forming step of performing the film formation.

According to the tenth aspect, the correlation between the ratio of the radius of the outer periphery of the high-speed rotating surface to the radius of the substrate holder and the rotational speed of the high-speed rotating plate at which the crystal film grows to a uniform thickness on the substrate is obtained in advance. Therefore, when the ratio of the radius of the high-speed rotating plate to the radius of the substrate holder is large, even if the high-speed rotating plate is rotated at a relatively low speed, an in-plane distribution equal to or less than a predetermined value can be obtained on the substrate. When the ratio of the radii is small, the in-plane distribution of a predetermined value or less can be obtained on the substrate by rotating the high-speed rotating plate at a relatively high speed.

[0031]

BEST MODE FOR CARRYING OUT THE INVENTION

(First Embodiment) A first embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a sectional view showing the structure of a film forming apparatus according to the first embodiment of the present invention. As shown in FIG. 1, the present film forming apparatus includes a chamber 11 serving as a reaction furnace for heating and reacting a source gas, and a gas supply unit 12 for supplying the source gas from outside the chamber 11 to the inside of the chamber 11. And a disk-shaped substrate holder 14 that is provided to face the gas supply port 12a of the gas supply unit 12 and holds the substrate 13 on which the crystal film is grown on the same circumference on the substrate holder surface. I have. Under the substrate holder 14, the substrate holder 14
A heater 15 is provided near the lower surface of the substrate, and the heater 15 heats the substrate holder 14 to a film forming temperature.

As a feature of the first embodiment, a high-speed rotating plate 16a having a ring-shaped flat high-speed rotating surface located outside the substrate holder 14, and an inner peripheral portion of the high-speed rotating plate 16a integrated with the substrate A concave cover 1 formed to cover the holder 14 and the heater 15 and having an opening at the center of the bottom.
6b and a cylindrical rotary shaft 1 integrally formed so as to extend downward from the peripheral edge of the opening of the cover 16b and airtightly supported by a bearing 11a provided at the bottom of the chamber 11.
6c. The high-speed rotating plate 16a is configured so that the rotating force of the rotating plate motor 18
7 to the rotating shaft 16c,
It rotates at a rotation speed of about 0 rpm.

Hereinafter, the operation of the film forming apparatus configured as described above will be described.

First, a plurality of substrates 13 for forming a desired film, for example, a semiconductor thin film or a high dielectric oxide film, is held at a predetermined position of a substrate holder 14, and then a rotating plate motor 18 is operated. While rotating the rotating member 16, the heater 15 is operated to heat the substrate holder 14 until a temperature suitable for film formation is reached. Next, a source gas for the film is supplied into the chamber 11 from the gas supply port 12a.

According to the present embodiment, the raw material gas reaching the upper surface of the high-speed rotating plate 16a rotating at a high speed of about 1000 rpm receives centrifugal force from the upper surface of the high-speed rotating plate 16a. Since the gas flows through the outer peripheral portion, the source gas is sequentially supplied to the upper surface of each substrate 13 by a pump effect. Further, since the gas does not rise on each substrate 13 as in the conventional apparatus shown in FIG. 17A, it is possible to form a film uniform and excellent in the steepness of the hetero-interface composition, Since the holder 14 does not rotate at high speed, the substrate 13 does not scatter.

The substrate holder 14 and the high-speed rotating plate 16a
Because it is composed of a member different from that and in a non-contact manner,
The high-speed rotation of the high-speed rotating plate 16a causes the viscous resistance of the raw material gas. Even if the high-speed rotating plate 16a vibrates, the substrate holder 14 does not vibrate, so that the substrate 13 itself does not vibrate. Defects can be eliminated.

Further, since the heater 15 is covered by the cover 16b of the rotating member 16, it is possible to prevent the unnecessary material from being deposited on the heater 15.

Hereinafter, a film forming method using the film forming apparatus according to the first embodiment of the present invention will be described.

First, as shown in FIG.
After the substrate 13 made of a silicon wafer having a diameter of 20 inches is held at a predetermined position, the high-speed rotating plate 16a is rotated at a rotation speed of about 1000 rpm. Thereafter, the heater 15 is used to heat the substrate holder 14 and each substrate 13 held by the substrate holder 14 to a film forming temperature of 800 degrees.

Next, for example, a high dielectric oxide film (SrTiO)
₃ ) Organic titanium, organic strontium, and oxygen gas are supplied into the chamber 11 from the gas supply port 12 as raw materials. After the film formation, the temperature is lowered to 300 ° C. or lower, and then the rotation of the rotating plate is stopped. As a result, a titanium-lead oxide high dielectric film is uniformly formed on a 20-inch diameter silicon wafer.

According to the present film forming method, the mechanism itself becomes large in order to rotate the substrate holder 14 which holds the large substrate 13 of 20 inches, but without rotating the substrate holder 14, Since the high-speed rotating plate 16a provided outside the substrate holder 14 is rotated, a large-scale mechanism is not required, and a uniform film can be grown even on a large substrate.

In this embodiment, the high dielectric film is formed. However, as a source gas, a group II organic metal and a group VI organic metal or hydride, or a group III organic metal and V
By supplying an organic metal or hydride of the group
III-V group compound semiconductors and II-VI group compound semiconductor mixed crystals can be grown with good uniformity.

Hereinafter, a first modification of the first embodiment of the present invention will be described with reference to FIGS. 2 (a) and 2 (b).

As shown in FIG. 2A, the high-speed rotating plate 16
a is provided between the substrate holder 14 and the heater 15 in parallel with the substrate holder 14, and the cross section in the rotation axis direction is the rotation axis 1.
It has a plate-like shape having an opening 6c. FIG. 2 (b)
As shown in the top view of FIG. 5, in order to transfer the heat of the heater 15 to the substrate holder 14 by radiation, the high-speed rotating plate 16a is provided with four fan-shaped openings 16d around the rotation axis.

According to the present modification, the high-speed rotating plate 16a has a plate-shaped cross section in the direction of the rotation axis, so that the rotation is stable and the high-speed rotating plate 16a can be reduced in weight.

Since the high-speed rotating plate 16a has a shape that can be easily processed, the high-speed rotating plate 16a can be easily manufactured even with a material having poor workability such as molybdenum.

Hereinafter, a second modification of the first embodiment of the present invention will be described with reference to FIG.

As shown in FIG. 3, the present film forming apparatus is provided inside a substrate-rotating substrate holder 14A, and has a central portion of the substrate surface of each substrate 13 and an axis perpendicular to the substrate surface. Then, substrate rotation means for holding each substrate 13 on the holder surface and rotating each substrate 13 is provided. Also, the chamber 11
And a substrate rotation motor 19 provided as a power source of the substrate rotation means, extending vertically downward from the center of the substrate rotation type holder 14 </ b> A with respect to the substrate holder surface, and having a rotation shaft 16 c of the rotation member 16. A rotation axis for substrate rotation, which is provided on the inside and transmits a rotational force to the substrate rotation means via an endless belt for substrate rotation, is provided.

According to this modification, since the substrate rotation means for rotating each substrate 13 is provided inside the substrate rotation type substrate holder 14A, the raw material gas is uniformly supplied to the growth surface of each substrate 13. Thus, a more uniform film can be formed.

Hereinafter, a third modification of the first embodiment of the present invention will be described with reference to FIG.

As shown in FIG. 4, the present film forming apparatus holds each substrate 13 on a holder surface with the axis at the center of the substrate surface of each substrate 13 and a direction perpendicular to the substrate surface as an axis. The substrate rotation type substrate holder 14B is provided on the bottom of the substrate rotation type rotation member 16A, and the substrate rotation type rotation member 16A is provided on each substrate 13 of the substrate rotation type substrate holder 14B.
And a substrate rotation means 22 for transmitting the rotational force of the rotating shaft 16c using a gear or the like.

According to the present modification, the rotational force for rotating the substrate 13 is used as the rotating shaft 16 of the substrate rotating member 16A.
Since the substrate rotation means 22 for transmitting the rotational force c to the substrate rotation type substrate holder 14B is provided, it is not necessary to newly add a power source for rotating the substrate.

Hereinafter, a fourth modification of the first embodiment of the present invention will be described with reference to the drawings.

As shown in FIG. 5, a first gas supply unit 12A and a second gas supply unit 12B are provided in the upper part of the chamber 11 so as to be parallel to each other and supply two kinds of source gases having different compositions. And First gas supply unit 1
2A has a first gas supply port 12a facing the rotation-type substrate holder 14C, and a second gas supply unit 12B has a second gas supply port 12A facing the rotation-type substrate holder 14C.
b.

Further, there is provided a holder rotating shaft 14a extending vertically downward from the center of the holder surface and provided inside the rotating shaft 16c of the rotating member 16; There is provided a rotation type substrate holder 14C whose holder surface rotates by 14a.

A holder rotation motor 19 provided outside the chamber 11 and serving as a power source of the rotation type substrate holder 14C.
A and a holder rotation endless belt 20 for transmitting the driving force of the holder rotation motor 19A to the holder rotation shaft 14a.
A.

As a feature of this modification, for example, in the case of a compound semiconductor comprising a group III element and a group V element, the first gas inlet 12A is used for the group III element and the second gas supply port 1A is used.
By rotating the rotation type substrate holder 14C at 60 rpm, which is one rotation / atomic layer growth time, using each of 2B for the group V element, the atoms of the group III element and the group V element are alternately flattened one by one. Atomic layer epitaxial growth that grows to a thickness of at least 1 is possible.

That is, since the atoms of the group III elements or the atoms of the group V elements do not grow in crystal, the first gas supply port 12A is opposed to the first gas supply port 12A on the surface of the substrate 13 on the holder surface of the rotation type substrate holder 14C. While one group III atom is
Since only a layer is grown and only one layer of group V element atoms grows while facing the second gas supply port 12B, atomic layer epitaxy (atomic layer epi) is performed.
taxy) can be performed.

In the first embodiment and each of the modifications, the endless belt is used to transmit the driving force of the high-speed rotating plate, the substrate, or the substrate holder. However, other transmission means such as a chain and a gear are used. Alternatively, the high-speed rotating plate or the substrate holder may be directly rotated using a motor without passing through a transmission unit.

(Second Embodiment) Hereinafter, a second embodiment of the present invention will be described with reference to the drawings.

FIG. 6 is a sectional view showing the structure of a film forming apparatus according to the second embodiment of the present invention. In FIG. 6, the same members as those of the first embodiment shown in FIG. As shown in FIG. 6, the rotating member of the present film forming apparatus includes a rotating shaft offset type rotating member 16B driven to rotate by a rotating member rotation transmission shaft 24 different from the rotating shaft of the high-speed rotating plate 16a.

The rotary shaft offset type rotary member 16B has a circular opening 16 at the center of the bottom of the rotary shaft offset rotary member 16B facing the lower surface of the heater 15.
e, the peripheral edge of the bottom of the rotary shaft offset type rotary member 16B is supported by at least three rotary plate support rods 23, and the inner circumferential surface on the opening 16e side is driven by a driving means such as a pulley or gear. And rotate. Further, the rotation transmitting shaft 24 for the rotating member transmits the driving force of the motor 18 for the rotating plate to the driving means via the endless belt 17.

As a feature of this embodiment, the high-speed rotating plate 16
Since at least three rotating plate support rods 23 for supporting the outer edge of the bottom of the rotating shaft offset type rotating member 16B are provided at a position different from the rotating shaft of FIG. Since there is no need to support the rotating member 16B, the diameter of the rotating member rotating shaft 24 can be reduced. Thus, the opening area of the bearing portion 11b of the chamber 11 can be reduced, so that the airtightness can be improved.

Further, since the position of the support rod supporting the substrate holder 14 and the position of the rotation transmission shaft 24 for the rotating member are separated from each other, the vibration of the rotation transmission shaft 24 for the rotation member is transmitted to the support rod of the substrate holder 14. It becomes difficult. Therefore, the substrate 13
Is suppressed, so that a more uniform film can be formed.

FIG. 7 is a sectional view showing the structure of a film forming apparatus according to a first modification of the second embodiment of the present invention. As shown in FIG. 7, the difference from the second embodiment is that a substrate rotation type substrate holder 14A having substrate rotation means for rotating each substrate 13 while being held on the holder surface, and a power source of the substrate rotation means. , A substrate rotation endless belt 20 for transmitting the power of the substrate rotation motor 19 to the substrate rotation means, and a substrate rotation rotation shaft 21.

FIG. 8 is a sectional view showing the structure of a film forming apparatus according to a second modification of the second embodiment of the present invention. As shown in FIG. 8, the first modification of the second embodiment is shown in FIG. The difference is that the rotation axis offset type rotation member 16C is provided between the substrate rotation type substrate holder 14A and the heater 15 in parallel with the substrate rotation type substrate holder 14A, and the cross-sectional shape in the rotation axis direction is at the center. This is a plate-like shape having an opening.

According to the first modification or the second modification, since the substrate rotation means is provided, each thin film grown on each substrate becomes more uniform, and the rotation axis 21 for substrate rotation and the rotation member for the rotating member are provided. Since the diameter of each bearing portion 11b of the transmission shaft 24 can be reduced, the airtightness of the chamber 11 can be improved.

(Third Embodiment) Hereinafter, a third embodiment of the present invention will be described with reference to the drawings.

FIG. 9A is a sectional view showing the structure of a film forming apparatus according to the third embodiment of the present invention. In FIG. 9A,
The same members as those of the first embodiment shown in FIG. FIG. 9 (a)
As shown in the figure, twelve horizontal blades 30 are provided on the outer peripheral surface of the high-speed rotating plate 16a so as to extend radially outward of the high-speed rotating plate 16a. As shown in the front view of FIG. 9B, each horizontal blade 30 rotates the rotating member 16 at a predetermined angle with respect to the rotating plate surface of the rotating member 16, that is, clockwise as viewed from above the apparatus. In this case, the angle formed by the horizontal blade 30 in the traveling direction with respect to the rotating plate surface has an angle of elevation, and is provided so as to be parallel to each other.

As a result, when the high-speed rotating plate 16a rotates clockwise, the exhaust gas, which is an unnecessary source gas, which has reached the outer peripheral portion of the high-speed rotating plate 16a, is forced to flow below the substrate holder 14 by the horizontal blades 30. Therefore, the exhaust gas blown radially outward from the upper surface of the high-speed rotating plate 16a hits the side wall of the chamber 11 and flows upward in the chamber 11, and the exhaust gas is supplied from the gas supply port 12a. Is suppressed, so that the crystal films grown on each substrate 13 can be made uniform.

Hereinafter, a first modification of the third embodiment of the present invention will be described with reference to FIG.

At the outer edge of the upper surface of the high-speed rotating plate 16a shown in FIG. 10, twelve vertical blades 31 are provided so as to extend upward in the axial direction of the high-speed rotating plate 16a. FIG. 10 (b)
As shown in the plan view of FIG. 10 and the front view of FIG. 10C, each of the vertical blades 31 has a predetermined angle with respect to the normal to the outer peripheral surface of the high-speed rotating plate 16a, that is, the The leading ends of the vertical blades 31 in the traveling direction with respect to the extending normal lines are provided so as to be shifted toward the rotation axis and have acute angles.

As a result, when the high-speed rotating plate 16a rotates, the vertical blades 31 forcibly generate a gas flow directed radially outward of the high-speed rotating plate 16a.
Since the pump effect can be obtained even if the area of the upper surface of 6a is small, the diameter of the high-speed rotating plate 16a can be reduced.
As a result, the radial dimension of the high-speed rotating plate 16a in the chamber 11 can be reduced.

FIG. 11 is a sectional view showing the structure of a film forming apparatus according to a second modification of the third embodiment of the present invention. As shown in FIG. 11, the difference from the first modification is that an upper end of each vertical blade 31 is provided in parallel with the high-speed rotating plate 16a and has an opening facing the substrate holder 14; Vertical blade 3
1 in that a horizontal rotating plate 32 covering the first rotating plate 32 is provided.

FIG. 12A is a sectional view showing the structure of a film forming apparatus according to a third modification of the third embodiment of the present invention.
As shown in FIG. 12A, the difference from the second modification is that the high-speed rotating plate 16 a is provided between the substrate holder 14 and the heater 15 in parallel with the substrate holder 14 and has a cross section in the rotation axis direction. The shape is formed in a plate shape having an opening at the rotation shaft 16c, and as shown in the top view of FIG. The plate 16a is provided with four fan-shaped openings 16d around the rotation axis.

According to the second or third modification, since the horizontal blade 30 and the horizontal rotating plate 32 for covering the vertical blade 31 are provided at the tip of the vertical blade 31, the gas at the outer edge of the substrate holder 14 can be removed. Since the flow is not disturbed, both the horizontal blade 30 and the vertical blade 31 can generate a gas flow that smoothly flows radially outward on the upper surface of the substrate holder 14. Therefore, the thickness of the crystal film grown on each substrate 13 can be made uniform.

Although not shown, the substrate holder 14
Alternatively, a substrate rotation means for rotating each substrate 13 or a substrate holder rotation means for rotating the substrate holder 14 may be provided.

(Fourth Embodiment) Hereinafter, a fourth embodiment of the present invention will be described with reference to the drawings.

FIGS. 13A to 13C are plan views of a substrate holder and a high-speed rotating plate or horizontal blade of a film forming apparatus according to a fourth embodiment of the present invention. In FIGS. 13A and 13B, reference numeral 14 denotes a circular substrate holder for holding three substrates 13 made of InP (indium phosphorus) having a diameter of 2 inches on the same circumference, and reference numeral 26 denotes an outer side of the substrate holder 14. A ring-shaped high-speed rotating plate provided on substantially the same plane as the substrate holder surface and rotating at high speed around the substrate holder 14. In FIG. 13C, reference numeral 14 denotes a substrate holder which holds three substrates 13 each made of InP having a diameter of 2 inches on the same circumference;
Reference numeral 0 denotes a horizontal blade provided on the outside of the substrate holder 14 in a ring shape on the substantially same plane as the surface of the substrate holder, and rotating around the substrate holder 14 at a high speed.

In the conventional film forming method without using the high-speed rotating plate 26, the rotation speed of the substrate holder 14 is set to 1000 rpm.
On the other hand, when the high-speed rotating plate 26 of the present invention is used, even when the rotation speed of the high-speed rotating plate 26 is reduced, the same diameter can be obtained by increasing the outer diameter of the high-speed rotating plate 26. Uniform film thickness can be obtained.

FIG. 14 shows the correlation between the radius ratio of the outer periphery of the high-speed rotating plate standardized by the radius of the substrate holder and the number of rotations of the high-speed rotating plate necessary for growing a crystal film on the substrate to a uniform thickness. It is a graph showing.

For example, as shown in FIG. 13A, the radius R1 of the outer periphery of the high-speed rotating plate 26 is
0, the rotation speed of the high-speed rotating plate 26 is set to 56
It can be reduced to 0 rpm. On the other hand, FIG.
As shown in FIG.
If m, the radius R1 of the outer periphery of the high-speed rotating plate 26 can be reduced to 1.4 times that of the substrate holder 14.

Using a high-speed rotating plate 26 shown in FIG. 13B, TMIn (trimethylindium) as a raw material of InP crystal was applied at 200 ccm (ccm = 10 ⁻⁶ m ^3).
/ Min.) And PH ₃ (phosphine) are supplied at 100 ccm, respectively, and the growth temperature is 600 ° C., and the radial width of the high-speed rotating plate 26 is 48 mm (R1 = 168 mm, R1 = 12 mm).
0 mm) and a rotation speed of 1000 rpm, the in-plane distribution of the film thickness of the substrate 13 is within 2%.

As a result, it is possible to suppress an increase in the capacity of the chamber due to the installation of the high-speed rotating plate 26, and to improve the uniformity of the film thickness.

FIG. 15 is a graph showing the correlation between the radius ratio of the outer periphery of the vertical blade standardized by the radius of the substrate holder and the rotation speed of the horizontal blade necessary for growing a crystal film on the substrate to a uniform thickness. It is.

As shown in FIG. 15, when the radius R2 of the outer periphery of the horizontal blade 30 is set to 1.3 times the radius R0 of the substrate holder 14, the film thickness corresponding to the case where the rotation speed of the substrate holder 14 is 1000 rpm is set. Is obtained at 300 rpm. Further, by slightly increasing the length of the horizontal blade 30 in the radial direction, the rotation speed of the horizontal blade can be significantly reduced. In addition, as shown in FIG. 13C, when creating the graph shown in FIG.
The calculation was performed on the assumption that the number of 0s was 16.

Using the horizontal blade 30 shown in FIG. 13 (c), 200 ccm of TMIn and 100 ccm of PH _3, which are the raw materials of the InP crystal, were supplied, and the growth temperature was set to 6 ° C.
00 degrees, the radial width of the horizontal blade 30 is 36 mm (R2 =
156 mm, R1 = 120 mm) and the number of rotations is 300 r
When grown as pm, the in-plane distribution of the film thickness of the substrate 13 is within 2%.

The horizontal blade 30 of the high-speed rotating plate shown in FIG. 13 (c) was set such that the width of the rotating plate in the radial direction was almost 0 and the relationship of the horizontal blade 30 was purely obtained.
The horizontal blades 30 are provided on the outer periphery of the high-speed rotating plate, and the rotation ratio of the horizontal blades necessary for growing the crystal film to a uniform film thickness on the substrate with the radius ratio of the outer periphery of the vertical blades normalized by the radius of the substrate holder. A correlation with a number may be obtained.

As described above, according to the present embodiment, even if the number of rotations of the high-speed rotating plate 26 or the horizontal blade 30 is reduced, the uniformity of the film thickness can be obtained, so that the vibration of the substrate holder 14 can be further suppressed. Thus, the life of the device can be extended.

[0091]

According to the film forming apparatus of the first aspect, the pump effect can be obtained without rotating the heavy substrate holder at high speed, so that the crystal film to be grown has a uniform film thickness and the substrate holder has a uniform thickness. Since the substrate held in the substrate is not scattered, the yield can be improved.

Further, even if the high-speed rotation surface vibrates, the substrate holder does not vibrate, and the substrate itself does not vibrate.
Poor film formation due to vibration can be suppressed.

Further, since it is not necessary to rotate a heavy substrate holder at high speed, the configuration of the apparatus can be simplified.

According to the film forming apparatus of the second aspect, the effect of the film forming apparatus of the first aspect is obtained, and the rotating member can be formed in a simple shape. And the rotating member can be reliably manufactured.

According to the film forming apparatus of the third aspect, the effect of the film forming apparatus of the first or second aspect is obtained, and the gas flow from the outer edge of the substrate holder surface to the high-speed rotation surface becomes smooth. Since the pump effect can be reliably obtained, the film can be more uniformly formed.

According to the film forming apparatus of the fourth aspect,
In addition to the effect of the film forming apparatus of (3), since the driving means is displaced from the center of the substrate holder, vibration due to rotation is difficult to be transmitted to the substrate holder. it can.

According to the film forming apparatus of the present invention,
In addition to the effect of the film forming apparatus of No. 4, the reacted source gas quickly moves away from the surface of the substrate holder, so that the sharpness of the composition of the interface of the grown film is surely improved.

According to the film forming apparatus of the sixth aspect,
5, the pump effect is not impaired even if the diameter of the high-speed rotating surface is reduced.
The volume of the reactor can be reduced.

According to the film forming apparatus of the present invention, the effect of the film forming apparatus of the present invention can be obtained and a gas flow can be generated which smoothly flows radially outward on the upper surface of the substrate holder. The film can be formed more uniformly.

According to the film forming apparatus of the present invention,
In addition to obtaining the effect of the film forming apparatus of No. 7, the source gas is evenly supplied to the growth surface of the substrate, so that a more uniform film can be formed.

According to the film forming apparatus of the ninth aspect,
In addition to the effects of the film forming apparatus of No. 8, the film forming apparatus having a plurality of gas supply units can cope with atomic layer epitaxial growth.

According to the film forming method of the tenth aspect, when the ratio of the radius of the outer periphery of the high-speed rotating surface to the radius of the substrate holder is large, even if the high-speed rotating surface is rotated at a relatively low speed, the film grows on the substrate. The crystal film to be formed can have an in-plane distribution equal to or less than a predetermined value, and when the ratio of the radii is small, the crystal film that grows on the substrate is rotated by rotating the high-speed rotating surface at a relatively high speed. An in-plane distribution equal to or less than a predetermined value can be obtained.

Therefore, even if the rotation speed of the high-speed rotating surface is reduced, the uniformity of the film thickness is ensured by determining the outer diameter of the high-speed rotating surface by determining the radius ratio from the calculated correlation. The vibration of the substrate holder can be further suppressed, and the life of the apparatus can be extended.

In order to reduce the size of the apparatus, the radius ratio is reduced, and the rotational speed of the high-speed rotating plate is determined by determining the rotational speed from the calculated correlation. Uniformity can be ensured.

[Brief description of the drawings]

FIG. 1 is a configuration sectional view of a film forming apparatus according to a first embodiment of the present invention.

FIG. 2A is a configuration sectional view of a film forming apparatus according to a first modification of the first embodiment of the present invention. (B) is a top view of the high-speed rotating plate of the film forming apparatus according to the first modification of the first embodiment of the present invention.

FIG. 3 is a configuration sectional view of a film forming apparatus according to a second modification of the first embodiment of the present invention.

FIG. 4 is a configuration sectional view of a film forming apparatus according to a third modification of the first embodiment of the present invention.

FIG. 5 is a configuration sectional view of a film forming apparatus according to a fourth modification of the first embodiment of the present invention.

FIG. 6 is a configuration sectional view of a film forming apparatus according to a second embodiment of the present invention.

FIG. 7 is a configuration sectional view of a film forming apparatus according to a first modification of the second embodiment of the present invention.

FIG. 8 is a configuration sectional view of a film forming apparatus according to a second modification of the second embodiment of the present invention.

FIG. 9A is a configuration sectional view of a film forming apparatus according to a third embodiment of the present invention. (B) is a front view of the high-speed rotating plate of the film forming apparatus according to the third embodiment of the present invention.

FIG. 10A is a configuration sectional view of a film forming apparatus according to a first modification of the third embodiment of the present invention. (B) is a top view of a high-speed rotating plate of a film forming apparatus according to a first modification of the third embodiment of the present invention. (C) is a front view of a high-speed rotating plate of a film forming apparatus according to a first modification of the third embodiment of the present invention.

FIG. 11 is a configuration sectional view of a film forming apparatus according to a second modification of the third embodiment of the present invention.

FIG. 12A is a configuration sectional view of a film forming apparatus according to a third modification of the third embodiment of the present invention. (B) is a top view of a high-speed rotating plate of a film forming apparatus according to a third modification of the third embodiment of the present invention.

FIG. 13A is a plan view of a substrate holder and a high-speed rotating plate used in a film forming method according to a fourth embodiment of the present invention. (B) is a plan view of a substrate holder and a high-speed rotating plate used in a film forming method according to a fourth embodiment of the present invention.
(C) is a plan view of a substrate holder and horizontal blades used in a film forming method according to a fourth embodiment of the present invention.

FIG. 14 is a view showing a state in which a crystal film grows to a uniform film thickness on a substrate and a radius ratio of an outer periphery of a high-speed rotating plate standardized by a radius of a substrate holder in a film forming method according to a fourth embodiment of the present invention. FIG. 7 is a graph showing a correlation with a required number of rotations of a high-speed rotating plate.

FIG. 15 shows the ratio of the radius of the outer periphery of the horizontal blade standardized by the radius of the substrate holder and the thickness required for the crystal film to grow to a uniform thickness on the substrate in the film forming method according to the fourth embodiment of the present invention. FIG. 7 is a graph showing a correlation with a rotation number of a horizontal blade.

FIG. 16A is a perspective view showing a schematic configuration of a conventional high-speed rotation type vapor phase growth apparatus. (B) is a front view of a substrate holder of the conventional high-speed rotation type vapor phase growth apparatus.

FIG. 17 (a) is a perspective view showing a schematic configuration of a first improved high-speed rotary type vapor phase epitaxy apparatus of the related art. (B) and (c) are front views of the substrate holder of the first improved high-speed rotary type vapor phase epitaxy apparatus of the related art.

FIG. 18 is a front view showing a schematic configuration of a second improved high-speed rotary type vapor phase growth apparatus of the related art.

[Explanation of symbols]

 11 Chamber 11a Bearing 11b Bearing 12 Gas Supply 12A First Gas Supply 12B Second Gas Supply 12a Gas Supply 12a First Gas Supply 12b Second Gas Supply 13 Substrate 14 Substrate Holder 14a Rotating shaft for holder rotation 14A Substrate rotating substrate holder 14B Substrate rotating substrate holder 14C Rotating substrate holder 15 Heater 16 Rotating member 16a High-speed rotating plate 16b Cover 16c Rotating shaft 16d Fan opening 16e Opening 16A Rotating member for substrate rotation 16B Rotary shaft offset type rotary member 16C Rotary shaft offset type rotary member 17 Endless belt 18 Rotating plate motor 19 Substrate rotation motor 19A Holder rotation motor 20 Substrate rotation endless belt 20A Holder rotation endless belt 21 Substrate rotation shaft 22 substrate rotation means 23 times Rolling plate support rod 24 Rotary member rotation transmission shaft 26 High speed rotating plate 30 Horizontal blade 31 Vertical blade 32 Horizontal rotating plate 32a Opening

Continued on the front page (51) Int.Cl. ⁶ Identification number Agency reference number FI Technical indication location H01L 21/205 H01L 21/205 21/31 21/31 B 21/68 21/68 N (72) Inventor Matsui Yasushi 1006 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (10)

[Claims] 1. A reaction furnace for heating and reacting a supplied source gas, a substrate holder provided inside the reaction furnace and holding a substrate on a substrate holder surface, and a substrate holder held on the substrate holder surface of the substrate holder. A gas supply means for supplying the source gas to the substrate, wherein the substrate holder is provided outside the substrate holder, wherein the substrate holder is provided with a gas supply means for supplying the source gas to the substrate. And a rotating member having a high-speed rotating surface that rotates at high speed around the film. 2. The component according to claim 1, wherein the rotating member is a plate-like body provided below the substrate holder and having the high-speed rotating surface parallel to the substrate holder surface. Membrane equipment. 3. The film forming apparatus according to claim 1, wherein the high-speed rotation surface is substantially on the same plane as the substrate holder surface. 4. The apparatus according to claim 1, further comprising a rotation shaft that rotates about an axis different from the rotation axis of the high-speed rotation surface, and further comprising a driving unit that rotationally drives the rotation member. The film forming apparatus according to any one of the above. 5. A plurality of rotation members provided to extend outward from the high-speed rotation surface in parallel with the high-speed rotation surface, and guide the source gas flowing along the high-speed rotation surface to a position below the substrate holder. The film forming apparatus according to claim 1, further comprising a blade member. 6. The rotating member further includes a plurality of blade members that are provided perpendicular to the high-speed rotation surface and guide the raw material gas outward along the high-speed rotation surface. The film forming apparatus according to claim 1. 7. A plate-like member which is provided on the plurality of blade members in parallel with the high-speed rotation surface and guides the source gas flowing above the high-speed rotation surface to the outside of the high-speed rotation surface. The film forming apparatus according to claim 6, further comprising: 8. The apparatus according to claim 1, further comprising a rotating means provided on said substrate holder, said rotating means for rotating the substrate held by said substrate holder.
The film forming apparatus described in the above section. 9. The apparatus according to claim 1, further comprising a rotation unit configured to rotate the substrate holder at a low speed.
The film forming apparatus according to any one of the above. 10. A reaction furnace for heating and reacting a supplied source gas, a circular substrate holder provided inside the reaction furnace and holding a substrate on a substrate holder surface, and a substrate holder surface of the substrate holder. Gas supply means for supplying the source gas to the substrate held in the substrate holder, and a ring-shaped rotating member provided outside the substrate holder and having a high-speed rotation surface that rotates at high speed around the substrate holder A film forming method for growing a crystal film made of the source gas on the substrate by using a film forming apparatus provided, while holding a test substrate in a test substrate holder having the same shape as the substrate holder, By growing a crystal film on the test substrate in a state where a rotating member having a test high-speed rotation surface having the same shape as the high-speed rotation surface is rotated, the test high-speed rotation with respect to the radius of the test substrate holder is performed. A correlation creation step of obtaining a correlation between the ratio of the radius of the outer periphery of the substrate and the rotation speed of the high-speed rotation surface for test in which the crystal film grows to a uniform thickness on the substrate; and the radius of the substrate holder and the high-speed rotation. A radius determining step of determining a radius of an outer periphery of the surface; and a rotational speed determining step of determining a rotational speed of the high-speed rotating surface from a ratio of a radius of the outer periphery of the high-speed rotating surface to a radius of the substrate holder based on the correlation. And a film forming step of growing a crystal film on a substrate held by the substrate holder by rotating the high-speed rotation surface at the rotation number determined in the rotation number determination step. A film forming method characterized by the above-mentioned.