JPH1032334A - ゲート電極及びその形成方法 - Google Patents
ゲート電極及びその形成方法Info
- Publication number
- JPH1032334A JPH1032334A JP8352537A JP35253796A JPH1032334A JP H1032334 A JPH1032334 A JP H1032334A JP 8352537 A JP8352537 A JP 8352537A JP 35253796 A JP35253796 A JP 35253796A JP H1032334 A JPH1032334 A JP H1032334A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- silicon layer
- gate electrode
- insulating film
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 14
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910021342 tungsten silicide Inorganic materials 0.000 claims abstract description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 14
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000035515 penetration Effects 0.000 claims abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- 229920005591 polysilicon Polymers 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 44
- 239000000470 constituent Substances 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1995P50441 | 1995-12-15 | ||
| KR1019950050441A KR100203896B1 (ko) | 1995-12-15 | 1995-12-15 | 게이트 전극 형성방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1032334A true JPH1032334A (ja) | 1998-02-03 |
Family
ID=19440439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8352537A Pending JPH1032334A (ja) | 1995-12-15 | 1996-12-16 | ゲート電極及びその形成方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH1032334A (de) |
| KR (1) | KR100203896B1 (de) |
| CN (1) | CN1172378C (de) |
| DE (1) | DE19652070C2 (de) |
| GB (1) | GB2308233B (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100710645B1 (ko) * | 2001-05-18 | 2007-04-24 | 매그나칩 반도체 유한회사 | 반도체소자의 금속배선 형성방법 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9802940D0 (en) * | 1998-02-11 | 1998-04-08 | Cbl Ceramics Ltd | Gas sensor |
| CN101572228B (zh) * | 2008-04-28 | 2011-03-23 | 中芯国际集成电路制造(北京)有限公司 | 多晶硅薄膜及栅极的形成方法 |
| SG11202100359SA (en) * | 2018-08-11 | 2021-02-25 | Applied Materials Inc | Graphene diffusion barrier |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0459770B1 (de) * | 1990-05-31 | 1995-05-03 | Canon Kabushiki Kaisha | Verfahren zur Herstellung einer Halbleiteranordnung mit Gatestruktur |
| JP2901423B2 (ja) * | 1992-08-04 | 1999-06-07 | 三菱電機株式会社 | 電界効果トランジスタの製造方法 |
| US5364803A (en) * | 1993-06-24 | 1994-11-15 | United Microelectronics Corporation | Method of preventing fluorine-induced gate oxide degradation in WSix polycide structure |
| JP2560993B2 (ja) * | 1993-09-07 | 1996-12-04 | 日本電気株式会社 | 化合物半導体装置の製造方法 |
| DE4440857C2 (de) * | 1993-11-16 | 2002-10-24 | Hyundai Electronics Ind | Verfahren zur Herstellung einer Gateelektrode einer Halbleitervorrichtung |
-
1995
- 1995-12-15 KR KR1019950050441A patent/KR100203896B1/ko not_active IP Right Cessation
-
1996
- 1996-12-13 DE DE19652070A patent/DE19652070C2/de not_active Expired - Fee Related
- 1996-12-15 CN CNB961214740A patent/CN1172378C/zh not_active Expired - Fee Related
- 1996-12-16 JP JP8352537A patent/JPH1032334A/ja active Pending
- 1996-12-16 GB GB9626113A patent/GB2308233B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100710645B1 (ko) * | 2001-05-18 | 2007-04-24 | 매그나칩 반도체 유한회사 | 반도체소자의 금속배선 형성방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2308233A (en) | 1997-06-18 |
| CN1172378C (zh) | 2004-10-20 |
| GB2308233B (en) | 2000-11-15 |
| KR100203896B1 (ko) | 1999-06-15 |
| DE19652070C2 (de) | 2003-02-20 |
| DE19652070A1 (de) | 1997-06-19 |
| GB9626113D0 (en) | 1997-02-05 |
| KR970053905A (ko) | 1997-07-31 |
| CN1155159A (zh) | 1997-07-23 |
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