JPH10316451A - Low-melting glass for forming transparent insulating film - Google Patents

Low-melting glass for forming transparent insulating film

Info

Publication number
JPH10316451A
JPH10316451A JP6571598A JP6571598A JPH10316451A JP H10316451 A JPH10316451 A JP H10316451A JP 6571598 A JP6571598 A JP 6571598A JP 6571598 A JP6571598 A JP 6571598A JP H10316451 A JPH10316451 A JP H10316451A
Authority
JP
Japan
Prior art keywords
glass
low
melting glass
electrode wire
transparent electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6571598A
Other languages
Japanese (ja)
Other versions
JP2839484B2 (en
Inventor
Noriyuki Awaji
則之 淡路
Keiichi Betsui
圭一 別井
Kazuhiro Nishikawa
和浩 西川
Ayumi Takayama
亜弓 高山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Glass Co Ltd
Fujitsu Ltd
Original Assignee
Central Glass Co Ltd
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd, Fujitsu Ltd filed Critical Central Glass Co Ltd
Priority to JP10065715A priority Critical patent/JP2839484B2/en
Publication of JPH10316451A publication Critical patent/JPH10316451A/en
Application granted granted Critical
Publication of JP2839484B2 publication Critical patent/JP2839484B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To obtain a low-melting glass for remarkably suppressing the erosion of a produced transparent electrode wire, by adding a specified amount of an oxide constituting the component of the transparent electrode wire to an SiO2 -B2 O3 -PbO-ZnO-based base component. SOLUTION: In the case of using an ITO film as an electrode wire, for example, In2 O3 and/or SnO2 as an oxide is previously introduced into a low-melting glass component and in the case of using an SiO2 film as the electrode wire, SnO2 into the low-melting glass component. The amount of the oxide added is 0.5-5 wt.%, the softening point of glass is <=550 deg.C and the coefficient of thermal expansion is 77-90×10<-7> / deg.C in the temperature range from normal temperature to 300 deg.C. A dielectric substance layer 3 α of a transparent insulating film is obtained by applying a mixture composed of low-melting glass powder and a paste oil to a front base glass 1 and a transporting electrode 2 by screen printing, etc., and baking. An address electrode 7 and a fluorescent substance 8 are arranged on a back base glass 6. A rare gas 11 (e.g. Ne gas) is sealed in a space (discharge space) between the base glass 1 and the back base glass 6.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、軟化温度が低いい
わゆる低融点ガラスであって、液晶表示パネル、エレク
トロルミネッセンスパネル、蛍光表示パネル、エレクト
ロクロミック表示パネル、発光ダイオード表示パネル、
ガス放電式表示パネル等の透明基板に配した透明電極線
パターン、例えば酸化インジウム−錫系(酸化インジウ
ム、酸化錫を主成分とする導電性物質:IT0 )または酸
化錫(SnO2)系の膜を透明・透視性に富むガラス被膜で
被覆するうえで好適な透明絶縁性被膜形成用低融点ガラ
スに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a so-called low-melting glass having a low softening temperature, comprising a liquid crystal display panel, an electroluminescence panel, a fluorescent display panel, an electrochromic display panel, a light emitting diode display panel, and the like.
Transparent electrode wire pattern arranged on the transparent substrate of the gas discharge type display panel or the like, for example, indium oxide - tin (indium oxide, a conductive material mainly composed of tin oxide: IT0) or tin oxide (SnO 2) based film The present invention relates to a low-melting glass for forming a transparent insulating film, which is suitable for coating with a glass film rich in transparency and transparency.

【0002】[0002]

【従来技術とその解決すべき課題】特開昭49−110709号
公報には、SiO2 1〜20wt%、B2O3 5〜25wt%、Al2O
31〜8wt%、ZnO 3〜15wt%、PbO 60〜80wt%からな
り、気体放電を利用した表示パネルにおける電極線を被
覆する絶縁ガラスであって、低い電圧で有効に発光でき
る表示パネル用絶縁ガラスが開示されている。
The BACKGROUND OF problem to be solved that] JP 49-110709 discloses, SiO 2 1~20wt%, B 2 O 3 5~25wt%, Al 2 O
31 to 8 wt%, ZnO 3 to 15 wt%, PbO 60 to 80 wt%, insulating glass for covering electrode wires in a display panel using gas discharge, insulation for display panel that can emit light effectively at low voltage Glass is disclosed.

【0003】特開平8−119665号公報には、SiO2 12〜
17wt%、B2O3 8〜15wt%、Al2O30.1 〜5wt%、ZnO
5〜12wt%、PbO 60〜70wt%からなり、熱膨張係数(室
温〜300℃)が62〜76×10-7/℃であるPDP基板に厚
膜を形成するうえで好適で、基板に塗布し焼成して厚膜
を形成した際に基板に反りや割れを発生し難いPDP用
のガラス組成物が開示されている。
[0003] JP-A-8-119665 discloses that SiO 2
17wt%, B 2 O 3 8~15wt %, Al 2 O 3 0.1 ~5wt%, ZnO
Suitable for forming a thick film on a PDP substrate composed of 5 to 12 wt% and PbO of 60 to 70 wt% and having a coefficient of thermal expansion (room temperature to 300 ° C) of 62 to 76 × 10 -7 / ° C. Disclosed is a glass composition for a PDP in which a substrate is hardly warped or cracked when a thick film is formed by firing.

【0004】これら先行技術は、電極線パターンを配し
た基板にそれら低融点ガラス混合ペーストを塗布し焼付
けした際に、電極線成分がガラスを侵食し、電極線の電
気抵抗を増大し易いという不具合がある。さらに、例え
ばガス放電式表示パネルにおいては焼付け後に駆動回路
配線部分の低融点ガラス被覆を希硝酸等の液で溶解・除
去するうえで、易溶性である必要がある。先行技術は発
光に適した絶縁性低融点ガラスや、基板の熱膨張性に整
合した低融点ガラスについて開示したものであって、こ
れらの課題について何ら示していない。
[0004] These prior arts are disadvantageous in that when the low-melting glass mixed paste is applied to a substrate on which an electrode wire pattern is arranged and baked, the electrode wire components erode the glass and tend to increase the electrical resistance of the electrode wires. There is. Further, for example, in a gas discharge type display panel, it is necessary to be easily soluble in dissolving and removing a low melting point glass coating of a drive circuit wiring portion with a liquid such as dilute nitric acid after baking. The prior art discloses an insulating low-melting glass suitable for light emission and a low-melting glass matched to the thermal expansion of a substrate, and does not show any of these problems.

【0005】本発明は、従来公知例における電極線の侵
食、電気抵抗の増大等をはじめとする上記不具合を解消
し、表示パネル用基板に施すうえで好適な特性を有する
透明絶縁性被膜形成用低融点ガラスを提供するものであ
る。
The present invention solves the above-mentioned disadvantages such as erosion of an electrode wire and an increase in electric resistance in a conventionally known example, and forms a transparent insulating film having characteristics suitable for application to a display panel substrate. A low melting glass is provided.

【0006】[0006]

【課題を解決するための手段】本発明は、表示パネル用
基板に配した透明電極線パターン上に、透明な絶縁性被
膜を形成するための低融点ガラスであって、SiO2−B2O3
−PbO −ZnO 系基礎成分に前記透明電極線の成分をなす
酸化物を 0.5〜5wt%の範囲で含んでなる低融点ガラス
である。
SUMMARY OF THE INVENTION The present invention relates to a low-melting glass for forming a transparent insulating film on a transparent electrode line pattern provided on a display panel substrate, comprising SiO 2 -B 2 O Three
A low-melting glass comprising -PbO-ZnO-based basic component and 0.5 to 5% by weight of an oxide constituting the transparent electrode wire.

【0007】上記ガラスの成分組成は、wt%で、SiO2
1〜5、B2O3 15〜30、Al2O3 0〜5、ZnO 8〜25、Pb
O 30〜60、CaO、MgO、SrO、BaOより選ばれた1種又は2
種以上 0〜20、透明電極線の成分をなす酸化物を 0.5
〜5の範囲で含むものであり、かつ軟化点が 550℃以
下、常温〜 300℃までの熱膨張係数が77〜90×10ー7/℃
である。
[0007] The composition of the above glass is wt%, SiO 2
1~5, B 2 O 3 15~30, Al 2 O 3 0~5, ZnO 8~25, Pb
O 30-60, one or two selected from CaO, MgO, SrO, BaO
Species or more 0-20, 0.5% of oxides constituting transparent electrode wire
Are those containing in a range of 5 and a softening point of 550 ° C. or less, the thermal expansion coefficient of up to room temperature ~ 300 ° C. is 77 to 90 × 10 over 7 / ° C.
It is.

【0008】特に、前記低融点ガラスは透明電極線パタ
ーンを被覆する透明な絶縁性ガラス被膜形成用低融点ガ
ラスであって、更にその上に重積する軟化点 480℃以下
の低融点ガラスからなる第2の透明絶縁性ガラス被膜の
下地層として形成させるとよい。
In particular, the low-melting glass is a low-melting glass for forming a transparent insulating glass film for covering a transparent electrode wire pattern, and further comprises a low-melting glass having a softening point of 480 ° C. or less which is laminated thereon. The second transparent insulating glass film may be formed as a base layer.

【0009】[0009]

【発明の実施の形態】絶縁性被膜形成用低融点ガラスに
おいて、SiO2−B2O3−PbO −ZnO 系を基礎成分とし、あ
るいはこれらにAl2O3 、SrO 、BaO 、CaO 、MgO 等の1
種ないし2種以上を適宜加える公知例は少なからずある
が、本発明においては、それら成分系に透明電極線の成
分をなす酸化物、例えばITO 膜を電極線とする場合はIn
2O3 および/またはSnO2を、SnO2膜を電極線とする場合
はSnO2を予め低融点ガラス成分中に導入することによ
り、該ガラスの焼付けに際して透明電極線成分のガラス
への侵食、拡散を大幅に抑え、電極線の抵抗の増大(導
電性の低下)を極力抑制することができる。
BEST MODE FOR CARRYING OUT THE INVENTION In a low-melting glass for forming an insulating film, an SiO 2 —B 2 O 3 —PbO—ZnO system is used as a basic component, or Al 2 O 3 , SrO, BaO, CaO, MgO, etc. Of 1
There are quite a few known examples in which one or more kinds are appropriately added, but in the present invention, an oxide constituting a component of a transparent electrode wire in such a component system, for example, when an ITO film is used as an electrode wire, In is used.
The 2 O 3 and / or SnO 2, by the case of the SnO 2 film and the electrode wire to be introduced into the pre-low-melting glass components in SnO 2, erosion to the glass of the transparent electrode line component during baking of the glass, Diffusion can be greatly suppressed, and an increase in resistance (decrease in conductivity) of the electrode wire can be suppressed as much as possible.

【0010】このように基板に透明電極線パターンを形
成し、絶縁性被膜形成用低融点ガラスで被覆するケース
は、液晶表示パネル、エレクトロルミネッセンスパネ
ル、蛍光表示パネル、エレクトロクロミック表示パネ
ル、発光ダイオード表示パネル、ガス放電式表示パネル
等があるがいずれの物品も本発明の対象に含まれる。
The case where the transparent electrode line pattern is formed on the substrate and covered with the low-melting glass for forming an insulating film is a liquid crystal display panel, an electroluminescence panel, a fluorescent display panel, an electrochromic display panel, a light emitting diode display. Although there are a panel, a gas discharge type display panel, and the like, any article is included in the present invention.

【0011】以下にガス放電式表示パネルの例を示し、
本発明を詳述するが、本発明はこれに限定されるもので
はない。
An example of a gas discharge type display panel will be described below.
The present invention will be described in detail, but the present invention is not limited thereto.

【0012】〔ガス放電式表示パネルの構造〕図1は表
示パネルの一部を示す概略側断面図である。1は透明な
前面基板ガラスで、ソーダ石灰系ガラスあるいはそれに
組成、熱物性等が類似したガラスからなる。2はパター
ニングされた透明電極線であり、通常は酸化インジウム
−錫 (ITO)系、または酸化錫(SnO2)系のものが使用さ
れる。3αは一態様としての本発明にかかる低融点ガラ
スよりなる透明絶縁性被膜(以下「誘電体層」とも称す
る)で、予め製造、整粒した低融点ガラス粉とペースト
オイルからなる混合物をスクリーン印刷等により前面基
板1および透明電極線2上に塗布し、570 〜600 ℃程度
で焼付けて厚み30μm 程度の厚膜を形成する。前記30μ
m 程度の厚みはガス放電による表示性能、長期安定性を
発揮させるうえで必要かつ充分な厚みとされる。
[Structure of Gas Discharge Display Panel] FIG. 1 is a schematic side sectional view showing a part of the display panel. Reference numeral 1 denotes a transparent front substrate glass, which is made of soda-lime glass or glass having similar composition and thermophysical properties. Reference numeral 2 denotes a patterned transparent electrode line, which is usually made of indium tin oxide (ITO) or tin oxide (SnO 2 ). 3α is a transparent insulating film (hereinafter also referred to as a “dielectric layer”) made of the low-melting glass according to the present invention as one embodiment. It is applied on the front substrate 1 and the transparent electrode wires 2 by baking or the like, and baked at about 570 to 600 ° C. to form a thick film having a thickness of about 30 μm. 30μ
The thickness of about m is necessary and sufficient for exhibiting display performance by gas discharge and long-term stability.

【0013】なお誘電体層は、本発明にかかる誘電体層
(I) 3、膜厚10μm 前後と、それより軟化点が低い( 4
80℃以下)誘電体層(II)4、膜厚20μm 前後とを積層し
形成するのがより好ましいが、それについては後述す
る。
The dielectric layer is a dielectric layer according to the present invention.
(I) 3. The film thickness is around 10 μm, and its softening point is lower than that (4
More preferably, the dielectric layer (II) 4 and the film thickness of about 20 μm are laminated and formed, which will be described later.

【0014】5は例えばスパッタリング法等により積層
したマグネシア層で、誘電体層3αまたは誘電体層4を
放電に際してスパッタリングから保護するものであり、
このように保護マグネシア層を被覆することはガス放電
式表示パネルの形成における常套手段である。
Reference numeral 5 denotes a magnesia layer laminated by, for example, a sputtering method, which protects the dielectric layer 3α or the dielectric layer 4 from sputtering during discharge.
Coating a protective magnesia layer in this manner is a common practice in forming gas discharge display panels.

【0015】6は背面基板(ガラス)で、前記透明電極
に対向するアドレス電極7、および所望色調に発光する
蛍光体8が配され、また各画素を区画するセラミック質
の隔壁9が形成される。これら前面基板ガラス1と背面
基板(ガラス)6は、それら周辺部を低融点ガラス10に
より封着せしめる。低融点ガラス10はシールが主目的で
透明性、透視性等は問題とするものではなく、PbO −Si
O2系低融点ガラス粉とペーストオイルからなる混合物を
略 450℃で焼成することにより完全にシールすることが
できる。前面基板ガラス1と背面基板(ガラス)6の間
の空間 (放電空間) には希ガス11、例えばNeガス等が封
入される。
Reference numeral 6 denotes a rear substrate (glass) on which an address electrode 7 facing the transparent electrode, a phosphor 8 emitting light of a desired color are arranged, and a ceramic partition 9 for partitioning each pixel is formed. . The periphery of the front substrate glass 1 and the rear substrate (glass) 6 are sealed with a low melting point glass 10. The low-melting glass 10 is mainly used for sealing, and transparency, transparency, etc. do not matter, and PbO-Si
By baking the mixture consisting of O 2 -based low melting glass powder and paste oil at about 450 ° C, it can be completely sealed. A rare gas 11, for example, a Ne gas is filled in a space (discharge space) between the front substrate glass 1 and the rear substrate (glass) 6.

【0016】なお、前面基板の製造加工は、基板ガラス
にスパッタリング法等により透明電極線パターンを形成
し、あるいは更に金属電極(例えばクロム−銅−クロ
ム)をバス電極として形成し、次いで誘電体層3αをス
クリーン印刷等で形成、焼付けし、更に透明電極線にお
ける駆動回路配線部分直上部の被覆した誘電体層3αの
みを希硝酸で溶解除去し、該駆動回路配線部分を露呈さ
せ配線できるようにすることにより完成する。
The front substrate is manufactured by forming a transparent electrode line pattern on the substrate glass by a sputtering method or the like, or further forming a metal electrode (for example, chromium-copper-chromium) as a bus electrode, and then forming a dielectric layer. 3α is formed by screen printing or the like, baked, and only the covered dielectric layer 3α immediately above the drive circuit wiring portion in the transparent electrode wire is dissolved and removed with dilute nitric acid to expose the drive circuit wiring portion so that wiring can be performed. It is completed by doing.

【0017】この場合、誘電体層3αは低軟化点である
と焼付けに際して流動性が増大し、透明電極線の成分の
侵食が顕著となるので、軟化点は 490℃以上とするのが
望ましい。他方、上記の如き軟化点であると、焼付けに
際して泡抜けが容易とはいえず、充分クリアーな被膜が
得られ難く、また希硝酸による溶解に際しても層厚を極
力薄くしないと非能率的となる。従って誘電体層は好適
には本発明にかかる誘電体層(I) 3、膜厚10μm 前後
と、それより軟化点が低く( 480℃以下)泡抜けが容易
な誘電体層(II)4、膜厚20μm 前後との積層形態とする
のが好ましい。
In this case, if the dielectric layer 3α has a low softening point, the fluidity at the time of baking increases, and the erosion of components of the transparent electrode wire becomes remarkable. Therefore, the softening point is desirably 490 ° C. or higher. On the other hand, when the softening point is as described above, bubble removal cannot be said to be easy at the time of baking, and it is difficult to obtain a sufficiently clear coating, and when dissolving with dilute nitric acid, it is inefficient if the layer thickness is not reduced as much as possible. . Therefore, the dielectric layer is preferably the dielectric layer (I) 3 according to the present invention, having a film thickness of about 10 μm, and having a softening point lower than that (480 ° C. or less) and easily removing bubbles. It is preferable to form a laminate with a film thickness of about 20 μm.

【0018】すなわち、基板ガラスにスパッタリング法
等により透明電極線パターン、バス電極としての金属電
極を形成し、次いで誘電体層(I) 3をスクリーン印刷等
で被覆形成、焼付けし、更に透明電極線の駆動回路配線
部分直上部を除いて誘電体層(II)4をスクリーン印刷等
で被覆形成し焼付け後、駆動回路配線部分を被覆する誘
電体層(I) 3を希硝酸で溶解除去し、該駆動回路配線部
分を露呈させる工程とするのが望ましい。
That is, a transparent electrode line pattern and a metal electrode as a bus electrode are formed on the substrate glass by a sputtering method or the like, and then the dielectric layer (I) 3 is coated and screened by screen printing or the like, and baked. The dielectric layer (II) 4 is formed by screen printing or the like except for the portion immediately above the drive circuit wiring portion, and after baking, the dielectric layer (I) 3 covering the drive circuit wiring portion is dissolved and removed with dilute nitric acid. It is desirable to have a step of exposing the drive circuit wiring portion.

【0019】しかして前記前面基板と背面基板を一体化
し希ガスを封入してガス放電式表示パネルを形成し、電
圧印加により透明電極2とアドレス電極7の間に電位差
を生じさせ、希ガス11を励起して紫外線を放射させ、そ
れが蛍光体8を刺激して発光、色表示せしめ、これを前
面基板側より視認するものである。
Thus, the front substrate and the rear substrate are integrated and a rare gas is sealed to form a gas discharge type display panel. By applying a voltage, a potential difference is generated between the transparent electrode 2 and the address electrode 7, and the rare gas 11 Is excited to emit ultraviolet light, which stimulates the phosphor 8 to emit light and display a color, which is visually recognized from the front substrate side.

【0020】〔透明絶縁性被膜形成用低融点ガラス〕前
記したように本発明における透明絶縁性被膜形成用低融
点ガラスは、SiO2−PbO −B2O3−ZnO 系成分を基礎と
し、透明電極線の成分をなす酸化物を含むものである
が、ガス放電式表示パネル等ソーダ石灰系または類似の
ガラスを基板とする表示パネルに適用する透明絶縁性被
膜形成用低融点ガラスにおいては、更に以下のごとく熱
物性、成分組成範囲を限定するのが好ましい。
[0020] [transparent insulating film-forming low-melting glass] low melting glass for the transparent insulating film formed in the present invention as described above, the basis of SiO 2 -PbO -B 2 O 3 -ZnO based component, transparent Although it contains an oxide constituting a component of an electrode wire, the low-melting glass for forming a transparent insulating film applied to a display panel using a soda-lime or similar glass as a substrate such as a gas discharge type display panel further includes the following: Thus, it is preferable to limit the thermophysical properties and the component composition range.

【0021】すなわち該低融点ガラスの軟化点 (粘度が
107.6 ポイズとなる温度) は 530℃以下とするもので、
それにより、先述 570〜600 ℃での焼付け、誘電体層3
αの形成に際してある程度流動的で泡抜けも可能とな
る。なお、軟化点が 530℃を越えると泡抜けが不充分と
なり易く、他方泡抜けを充分とすべく焼成温度を上げる
と基板ガラスの耐熱温度を越え、基板ガラスが収縮、変
形する等の不具合が生ずる。
That is, the softening point (viscosity of the low melting point glass)
10 7.6 poise) should be 530 ° C or less.
As a result, the baking at 570 to 600 ° C. and the dielectric layer 3
When α is formed, it is fluid to some extent and allows bubbles to escape. If the softening point is higher than 530 ° C, bubbles are likely to be insufficiently removed.On the other hand, if the baking temperature is increased to ensure sufficient bubbles, the substrate glass will exceed the heat resistance temperature, causing problems such as shrinkage and deformation of the substrate glass. Occurs.

【0022】軟化点はより低い方が好ましいが、余りに
低きに過ぎると焼付けに際して流動性が増大し、透明電
極線パターンからの侵食が顕著となり、透明電極線の抵
抗が増大するので、前記した如く望ましくは 490℃以上
で泡抜けも容易な薄い層とし(前記誘電体層(I) 3の形
成)、別に軟化点 480℃以下の低融点ガラスからなる誘
電体層(前記誘電体層(II)4の形成)を重積するのが好
ましい。
It is preferable that the softening point is lower. However, if the softening point is too low, the fluidity during baking increases, the erosion from the transparent electrode wire pattern becomes remarkable, and the resistance of the transparent electrode wire increases. As described above, it is preferable to form a thin layer at 490 ° C. or higher, which is easy to remove bubbles (formation of the dielectric layer (I) 3), and a dielectric layer made of a low melting point glass having a softening point of 480 ° C. or lower (the dielectric layer (II) ) 4) is preferred.

【0023】また、前記低融点ガラス誘電体層(誘電体
層(II)4)といえども、軟化点450℃未満であると、先
述のシール用低融点ガラス9により封着すべく450 ℃程
度で焼付けする際に、前記低融点ガラス(誘電体層(II)
4)の流動性が増大し、その上に成膜したマグネシア層
に亀裂が生ずる等の不具合が生ずるので好ましくなく、
従って軟化点を 450℃以上とするものである。
If the softening point of the low-melting-point glass dielectric layer (dielectric layer (II) 4) is lower than 450 ° C., about 450 ° C. is required for sealing with the aforementioned low-melting glass 9 for sealing. When baking with low melting point glass (dielectric layer (II)
The fluidity of 4) is increased, and problems such as cracks are generated in the magnesia layer formed thereon, which is not preferable.
Therefore, the softening point should be 450 ° C or higher.

【0024】前記誘電体層(II)4用の低融点ガラスとし
て、例えばSiO2 4wt%、B2O3 17wt%、Al2O3 2wt
%、ZnO 10wt%、PbO 67wt%からなり、軟化点 460℃の
ガラス、あるいはSiO2 4wt%、B2O3 22wt%、ZnO 6
wt%、PbO 68wt%からなり、軟化点 470℃のガラス等が
好適に採用できる。
As the low melting point glass for the dielectric layer (II) 4, for example, SiO 2 4 wt%, B 2 O 3 17 wt%, Al 2 O 3 2 wt
%, ZnO 10% by weight, PbO 67% by weight, glass having a softening point of 460 ° C., or SiO 2 4% by weight, B 2 O 3 22% by weight, ZnO 6
Glass having a softening point of 470 ° C. or the like can be suitably used.

【0025】前面基板ガラス1におけるソーダ石灰系ガ
ラス等の透明ガラスは熱膨張係数 (常温〜 300℃) がお
およそ80〜90×10-7/℃であり、従って本発明の低融点
ガラスからなる誘電体層3α、または誘電体層(I) 3も
それに近似した熱膨張係数を採るようにする。具体的に
は77〜90×10-7/℃とするもので、その範囲未満あるい
はその範囲を越えると、基板ガラスに反りや割れを与え
たり、誘電体層自体亀裂が生じたりする。
The transparent glass such as soda-lime glass in the front substrate glass 1 has a coefficient of thermal expansion (normal temperature to 300 ° C.) of approximately 80 to 90 × 10 −7 / ° C., and therefore, the dielectric material made of the low melting glass of the present invention. The body layer 3α or the dielectric layer (I) 3 also has a thermal expansion coefficient close to that. Specifically, it is set to 77 to 90 × 10 −7 / ° C., and if it is less than or exceeds the range, the substrate glass may be warped or cracked, or the dielectric layer itself may be cracked.

【0026】透明絶縁性被膜形成用低融点ガラスにおい
て、SiO2、B2O3、PbO およびZnO 成分は不可欠のもので
あり、これらがガラス中に計75wt%以上含まれることが
必要である。
In the low-melting glass for forming a transparent insulating film, SiO 2 , B 2 O 3 , PbO and ZnO are indispensable, and it is necessary that the glass contains 75% by weight or more in total.

【0027】うちSiO2およびB2O3は、ガラス中に合せて
20〜30wt%含むことにより、ガラス形成を容易とし、安
定したガラス相を得ることができる。
Of the SiO 2 and B 2 O 3 ,
By containing 20 to 30% by weight, glass formation is facilitated and a stable glass phase can be obtained.

【0028】ZnO およびPbO は、ガラス中に合せて55〜
75wt%含むことにより、ガラスの軟化点を適度に低く
し、先述の焼成等に際して泡抜けを容易とし、また熱膨
張係数を適当範囲に調整することができる。
ZnO and PbO are contained in a glass
By containing 75 wt%, the softening point of the glass can be appropriately reduced, bubbles can be easily removed during the above-described firing, and the coefficient of thermal expansion can be adjusted to an appropriate range.

【0029】また透明電極線の成分をなす酸化物をガラ
ス中に 0.5〜5wt%含ませることにより、透明電極線の
侵食を抑制し抵抗の増大を抑え、導電性能を維持するこ
とができる。より好ましくは前記酸化物を1〜5wt%の
範囲で含有させる。
By including 0.5 to 5% by weight of the oxide constituting the transparent electrode wire in the glass, the erosion of the transparent electrode wire can be suppressed, the increase in resistance can be suppressed, and the conductive performance can be maintained. More preferably, the oxide is contained in the range of 1 to 5% by weight.

【0030】個々の成分について述べれば以下の如くで
ある。すなわち、SiO2はガラス形成成分であり、それに
よりガラス化範囲を拡大し安定化することができる。Si
O2導入量は好ましくは1〜5wt%の範囲とする。1wt%
未満ではその作用が発揮できず、5wt%を越えるとガラ
ス粘度が上昇し、焼付けに際して泡抜けが困難となると
ともに、耐酸性が増大し前記希硝酸での溶解・除去が困
難となる。さらに好ましくは2〜4wt%の範囲とする。
The individual components are as follows. That is, SiO 2 is a glass-forming component, which can expand and stabilize the vitrification range. Si
The amount of O 2 introduced is preferably in the range of 1 to 5% by weight. 1wt%
If it is less than 5% by weight, the glass viscosity will increase, making it difficult for bubbles to escape during baking, as well as increasing the acid resistance, making it difficult to dissolve and remove with the dilute nitric acid. More preferably, it is in the range of 2 to 4% by weight.

【0031】ZnO はガラスに流動性を与え、また熱膨張
係数を調整するうえで導入するもので、その範囲は好ま
しくは8〜25wt%とする。8wt%未満ではその作用を発
揮し得ず、25wt%を越えるとガラスが不安定となり、結
晶化し易くなる。さらに好ましくは8〜20wt%の範囲と
する。
ZnO is used for imparting fluidity to glass and adjusting the coefficient of thermal expansion, and its range is preferably 8 to 25 wt%. If the amount is less than 8% by weight, the effect cannot be exhibited. If the amount exceeds 25% by weight, the glass becomes unstable and tends to crystallize. More preferably, it is in the range of 8 to 20% by weight.

【0032】B2O3はSiO2同様のガラス形成の主要成分と
して導入するもので、B2O3導入量は好ましくは15〜30wt
%の範囲とする。15wt%未満ではガラス形成が不安定で
失透、結晶を生じ易くなる。他方30wt%を越えるとガラ
スの粘度が上昇し焼付けに際する泡抜けが困難となる。
さらに好ましくは15〜25wt%の範囲で、且つZnO に対す
る比率を 1.2以上とする。前記比率を 1.2以上とするこ
とによりガラスの安定性が増し、結晶の析出による光散
乱率の低下を抑制できる。
B 2 O 3 is introduced as a main component of glass formation like SiO 2 , and the amount of B 2 O 3 introduced is preferably 15 to 30 wt.
% Range. If the content is less than 15 wt%, glass formation is unstable and devitrification tends to occur, and crystals are easily formed. On the other hand, if it exceeds 30% by weight, the viscosity of the glass increases and it becomes difficult to remove bubbles during baking.
More preferably, it is in the range of 15 to 25 wt%, and the ratio to ZnO is 1.2 or more. By setting the ratio to 1.2 or more, the stability of the glass is increased, and a decrease in the light scattering rate due to the precipitation of crystals can be suppressed.

【0033】PbO はガラスを低融点、すなわち軟化温度
を下げ、流動性を与えるうえで必要な成分であり、好ま
しくは30〜60wt%の範囲で導入する。40wt%未満ではそ
の作用が十分発揮できず、また焼成に際する泡抜けが不
充分となる。60wt%を越えると透明電極線の侵食が顕著
となり、また熱膨張係数が過大となる。好ましくは35〜
60wt%の範囲とする。
PbO is a component necessary for lowering the melting point of the glass, that is, lowering the softening temperature and imparting fluidity, and is preferably introduced in the range of 30 to 60% by weight. If it is less than 40% by weight, the effect cannot be sufficiently exerted, and bubble removal during firing becomes insufficient. If it exceeds 60% by weight, the erosion of the transparent electrode wire becomes remarkable, and the thermal expansion coefficient becomes too large. Preferably 35-
The range is 60 wt%.

【0034】Al2O3 はガラスを安定化させ、熱膨張係数
を調整するうえで適宜導入する。但し5wt%を越える導
入はガラスの粘度を上昇させ、泡抜けが困難となるとと
もに耐酸性が大きくなり、希硝酸での溶解・除去が困難
となる。
Al 2 O 3 is introduced as appropriate for stabilizing the glass and adjusting the thermal expansion coefficient. However, the introduction exceeding 5 wt% increases the viscosity of the glass, making it difficult to remove bubbles and increasing the acid resistance, making it difficult to dissolve and remove with dilute nitric acid.

【0035】透明電極線の成分である酸化物(例えばIn
2O3 、SnO2等)は焼付けに際して透明電極線の成分(IT
O またはSnO2系等)の低融点ガラス中への侵食拡散を抑
制し、透明電極線の導電性能を保持するうえできわめて
重要な成分であり、0.5 〜5wt%の範囲で導入する。0.
5 wt%未満ではその作用が十分発揮できず、透明電極線
が侵食しその電気抵抗値が上昇する。例えばSnO2が2wt
%を越えるとガラスが不安定となり、結晶化し易くな
り、他方In2O3 が3wt%を越えるとガラスの粘度が上昇
し、泡抜けが困難となる傾向を示し、またそれ自体非常
に高価な原料であるので必要以上に加えるべきではな
い。総じてそれら透明電極線の成分を為す酸化物を5wt
%以下とするものである。好ましくは1〜4wt%の範囲
とする。
An oxide (eg, In) which is a component of the transparent electrode wire
2 O 3 , SnO 2 etc. are components of the transparent electrode wire (IT
(O or SnO 2 system etc.) is a very important component for suppressing the erosion and diffusion into the low melting point glass and maintaining the conductive performance of the transparent electrode wire, and is introduced in the range of 0.5 to 5% by weight. 0.
If the content is less than 5 wt%, the effect cannot be sufficiently exhibited, and the transparent electrode wire is eroded and its electric resistance increases. For example, SnO 2 is 2wt
%, The glass becomes unstable and tends to crystallize. On the other hand, if the content of In 2 O 3 exceeds 3% by weight, the viscosity of the glass tends to increase, making it difficult to remove bubbles, and the glass itself is very expensive. It should not be added more than necessary because it is a raw material. In general, 5 wt.
% Or less. Preferably, it is in the range of 1 to 4% by weight.

【0036】なお熱膨張係数を調整する目的において、
本発明における溶融、泡抜け性、熱物性、希硝酸溶解性
等を損なわない範囲でCaO 、SrO 、MgO 、BaO より選ば
れる1種又は2種以上を0〜20wt%の範囲で導入でき
る。好ましくは2〜17wt%の範囲で導入するのがよい。
For the purpose of adjusting the coefficient of thermal expansion,
In the present invention, one or more selected from CaO, SrO, MgO, and BaO can be introduced in a range of 0 to 20 wt% within a range that does not impair the melting, defoaming properties, thermophysical properties, dilute nitric acid solubility, and the like. Preferably, it is introduced in the range of 2 to 17% by weight.

【0037】また、不純物としてのR2O (Na2O,K2O 等)
の混入量は、希ガス空間中にR20 成分が混入するとパネ
ル寿命の短縮を来す恐れがあるため、1wt%以下とする
ことが望ましい。
R 2 O (Na 2 O, K 2 O, etc.) as an impurity
The mixing amount of R 2 0 component in the rare gas space may shorten the panel life, so it is preferable to set the mixing amount to 1 wt% or less.

【0038】[0038]

【実施例】以下具体的実施例を例示して本発明を説明す
る。 〔低融点ガラス混合ペーストの作製〕SiO2源として微粉
珪砂を、B2O3源としてほう酸を、Al2O3 源として水酸化
アルミニウムを、ZnO 源として亜鉛華を、PbO 源として
酸化鉛を、CaO 源として炭酸カルシゥムを、SrO 源とし
て炭酸ストロンチウムを、BaO 源として炭酸バリウム
を、In2O3 源として酸化インジウムを、SnO2源として酸
化スズを使用し、これらを所望の低融点ガラス組成とな
るべく調合したうえで、白金ルツボに投入し、電気加熱
炉内で1000〜1100℃、1〜2時間で加熱溶融して、表1
の実施例1〜6の組成のガラス、表2の実施例7〜11の
ガラスを得た。また、比較のために酸化インジウムおよ
び酸化スズを含有しない組成のガラス(比較例1〜4)
を同様に調製した。ガラスの一部は型に流し込み、ブロ
ック状にして熱物性 (熱膨張係数、軟化点) 測定用に供
した。残余のガラスは急冷双ロール成形機にてフレーク
状とし、粉砕装置で平均粒径2〜4μm 、最大粒径15μ
m未満の粉末状に整粒した。
The present invention will be described below by way of specific examples. The [low Preparation of melting glass mixed paste] fine silica sand as a SiO 2 source, a boric acid as a B 2 O 3 source, the aluminum hydroxide Al 2 O 3 source, a zinc oxide as a ZnO source, a lead oxide as a PbO source Using calcium carbonate as a CaO source, strontium carbonate as a SrO source, barium carbonate as a BaO source, indium oxide as an In 2 O 3 source, and tin oxide as a SnO 2 source, these were used to obtain the desired low melting glass composition. After mixing as much as possible, put into a platinum crucible and heat and melt in an electric furnace at 1000-1100 ° C for 1-2 hours.
And the glasses of Examples 7 to 11 in Table 2 were obtained. Further, for comparison, glass having a composition not containing indium oxide and tin oxide (Comparative Examples 1 to 4)
Was similarly prepared. A part of the glass was poured into a mold, made into a block, and used for measuring thermophysical properties (thermal expansion coefficient, softening point). The remaining glass is flaked by a quenching twin roll forming machine, and has an average particle size of 2 to 4 μm and a maximum particle size of 15 μm by a pulverizer.
It was sized to a powder of less than m.

【0039】次いでαテルピネオールとブチルカルビト
ールアセテートからなるペーストオイルにバインダーと
してのエチルセルロースと上記ガラス粉を混合し、粘度
300±50ポイズ程度のスクリーン印刷に適するペースト
を調製した。
Next, ethyl cellulose as a binder and the above glass powder were mixed with a paste oil composed of α-terpineol and butyl carbitol acetate, and the viscosity was adjusted.
A paste suitable for screen printing of about 300 ± 50 poise was prepared.

【0040】〔誘電体層の形成〕厚み2〜3mm、サイズ
150mm□のソーダ石灰系基板ガラスに、焼付け後の膜厚
が8〜12μm となるべく勘案して目の開き#250のスクリ
ーンを用いて前記ペーストをスクリーン印刷により塗布
した。
[Formation of Dielectric Layer] Thickness 2-3 mm, size
The paste was applied to a 150 mm square soda-lime-based substrate glass by screen printing using a # 250 open screen, taking into account that the film thickness after baking was 8 to 12 μm.

【0041】次いで140 ℃で15分間乾燥した後、580 ℃
で10分間焼付け(実施例1〜6、比較例1〜3)、また
は 590℃で10分間焼付け(実施例7〜11、比較例4)
て、第Iの誘電体ガラスよりなるクリアーな厚膜を形成
した。
Next, after drying at 140 ° C. for 15 minutes,
For 10 minutes (Examples 1 to 6 and Comparative Examples 1 to 3) or at 590 ° C. for 10 minutes (Examples 7 to 11 and Comparative Example 4)
Thus, a clear thick film made of the first dielectric glass was formed.

【0042】さらに、SiO2 4wt%、B2O3 22wt%、Zn
O 6wt%、PbO 68wt%の組成で、軟化点 470℃の低融点
ガラスからなる第IIの誘電体を焼き付け後の膜厚が第
I、第IIの合計で30μm 程度となるべく勘案して目の開
き#250のスクリーンを用いて印刷・塗布し、140 ℃で15
分間乾燥した後、580 ℃で10分間焼付けて誘電体ガラス
のクリアーな厚膜を形成した。得られた試料について以
下の試験に供した。
Further, SiO 2 4 wt%, B 2 O 3 22 wt%, Zn
The composition of 6 wt% of O and 68 wt% of PbO and the second dielectric made of low-melting glass having a softening point of 470 ° C. is considered to have a total thickness of about 30 μm after baking so that the total thickness of the second dielectric is about 30 μm. Print and apply using a # 250 open screen, 140 ° C at 15 ° C
After drying for 5 minutes, it was baked at 580 ° C. for 10 minutes to form a clear thick film of dielectric glass. The obtained sample was subjected to the following tests.

【0043】〔熱膨張係数の測定〕前記熱物性測定用ガ
ラスブロックを所定寸法に切断、研磨して熱膨張係数測
定試料を作製し、これを熱膨張計にセットして5℃/分
の速度で昇温して伸び量を測定、記録し、室温〜300 ℃
の平均熱膨張係数を算出した。
[Measurement of Coefficient of Thermal Expansion] The glass block for measuring thermophysical properties was cut and polished to a predetermined size to prepare a sample for measuring the coefficient of thermal expansion, which was set in a thermodilatometer and set at a rate of 5 ° C./min. Measure the elongation by elevating the temperature at
Was calculated.

【0044】〔軟化点の測定〕常法により、ガラスブロ
ックからのガラスを加熱して所定太さ、寸法のガラスビ
ームを作製し、リトルトン粘度計にセットして昇温し、
粘度係数η=107.6 に達したときの温度、すなわち軟化
点を測定した。
[Measurement of Softening Point] In a conventional manner, glass from a glass block is heated to produce a glass beam having a predetermined thickness and dimensions, set in a Littleton viscometer, and heated.
The temperature at which the viscosity coefficient η reached 107.6 , that is, the softening point, was measured.

【0045】〔光散乱率 (ヘーズ値) の測定〕誘電体層
を形成した基板ガラス(厚み3mm) について常法によ
り、ヘーズメーターによりヘーズ値を測定した。基板ガ
ラスに微小泡が残存するとヘーズ値が著しく増大するも
ので、ヘーズ値は2%以下が良好とされる。
[Measurement of Light Scattering Rate (Haze Value)] The haze value of a substrate glass (thickness: 3 mm) on which a dielectric layer was formed was measured by a haze meter by a conventional method. If the micro bubbles remain in the substrate glass, the haze value increases remarkably, and the haze value is preferably 2% or less.

【0046】〔透過率の測定〕誘電体層を形成した基板
ガラス(厚み3mm)について常法により、分光光度計によ
り透過率を測定し、可視域における平均透過率を算定し
た。なお、可視光透過率は85%以上が良好とされる。
[Measurement of Transmittance] The transmittance of a substrate glass (thickness: 3 mm) on which a dielectric layer was formed was measured by a conventional method using a spectrophotometer, and the average transmittance in the visible region was calculated. Note that the visible light transmittance is preferably 85% or more.

【0047】〔希硝酸への溶解性の測定〕誘電体層を形
成した基板ガラスを7%硝酸液中に浸漬し、完全に溶解
・除去できる時間を計測。なお、3分間未満で除去でき
るものを良、3分間以上要するものを悪として評価し
た。
[Measurement of Solubility in Dilute Nitric Acid] The substrate glass on which the dielectric layer was formed was immersed in a 7% nitric acid solution, and the time required for complete dissolution and removal was measured. In addition, those that could be removed in less than 3 minutes were evaluated as good, and those that required more than 3 minutes were evaluated as bad.

【0048】〔透明電極線の侵食程度の測定〕ITO 薄膜
のついたガラス基板に誘電体層を形成し、7%硝酸液中
で誘電体層を溶解・除去した後、4探針法にてITO 薄膜
の電気抵抗値を測定した。なお、電気抵抗値の上昇が誘
電体層形成前の値の2倍以下のものを良、2倍を越える
ものを悪として評価した。
[Measurement of the degree of erosion of the transparent electrode wire] A dielectric layer was formed on a glass substrate having an ITO thin film, and the dielectric layer was dissolved and removed in a 7% nitric acid solution. The electrical resistance of the ITO thin film was measured. In addition, those having an increase in electric resistance of twice or less of the value before the formation of the dielectric layer were evaluated as good, and those with more than twice the increase were evaluated as bad.

【0049】〔失透の有無〕誘電体層について鏡下で失
透の有無を観察した。
[Presence or absence of devitrification] The dielectric layer was observed under a mirror for the presence or absence of devitrification.

【0050】〔ガラス板の反り〕厚み2mm、サイズ 300
mm□のソーダ石灰系基板ガラスに、同様に誘電体ガラス
よりなるクリアーな厚膜を形成し、誘電体膜形成基板ガ
ラスについて非接触式真直度・厚み測定機により反りの
状態を測定し、たわみ深さが50μm /300mmL以下のもの
を良、たわみ深さが50μm /300mmLを越えるものを悪と
した。
[Warpage of glass plate] Thickness 2 mm, size 300
Similarly, a clear thick film made of dielectric glass is formed on a soda-lime-based substrate glass of mm □, and the warpage of the dielectric film-formed substrate glass is measured with a non-contact straightness / thickness measuring device, and the deflection is measured. Those having a depth of 50 μm / 300 mmL or less were evaluated as good, and those having a deflection depth exceeding 50 μm / 300 mmL were evaluated as bad.

【0051】なお基板ガラスにおいて厚み2mmとしたの
は、基板を薄板とすることにより、より反りを生じ易く
し、厳しい区分評価を行えるようにするためである。
The reason why the thickness of the substrate glass is set to 2 mm is to make the substrate thinner so that warping is more likely to occur and strict classification evaluation can be performed.

【0052】〔結果〕透明絶縁性被膜形成用低融点ガラ
ス組成および、各種試験結果を表1、表2に示す。な
お、表1に示す実施例の低融点ガラスは、比較的 PbO
系で低軟化点(490℃以下)のガラスで、表1の比較例
の低融点ガラスに対比し、いずれも 580℃10分間焼付け
したもの、表2に示す実施例の低融点ガラスは、前記に
比べ低 PbO系で高軟化点( 490℃超過、但し 550℃以
下)のガラスで、表2の比較例の低融点ガラスに対比
し、いずれも 590℃10分間焼付けしたものある。
[Results] Tables 1 and 2 show the low melting point glass composition for forming the transparent insulating film and the results of various tests. The low melting point glass of the examples shown in Table 1 is relatively PbO
The glass having a low softening point (490 ° C. or lower) in the system, which was baked at 580 ° C. for 10 minutes in comparison with the low melting point glass of the comparative example in Table 1, and the low melting point glass of the example shown in Table 2 Compared to the low melting point glass of the comparative example in Table 2, it is a low PbO-based glass having a high softening point (exceeding 490 ° C, but not exceeding 550 ° C).

【0053】表1、表2から明らかなように、本発明に
かかる実施例においては、透明電極線の非侵食性をはじ
め、熱物性、光学特性、希硝酸による溶解・除去特性等
において良好であり、透明絶縁性被膜形成用低融点ガラ
ス、特にガス放電式表示パネル用の該低融点ガラスとし
て好適である。
As is clear from Tables 1 and 2, in the examples according to the present invention, the non-erodible properties of the transparent electrode wires, as well as the thermophysical properties, optical properties, dissolution / removal properties with dilute nitric acid, and the like are excellent. Thus, it is suitable as a low-melting glass for forming a transparent insulating film, especially as a low-melting glass for a gas discharge type display panel.

【0054】他方比較例においては、透明電極線の侵食
によりその電気抵抗値が上昇し、あるいは更に熱物性、
光学特性が適性範囲を外れ、または希硝酸への溶解性に
劣り、被膜の除去が困難となる等の不都合点を有する。
On the other hand, in the comparative example, the electric resistance value increases due to the erosion of the transparent electrode wire,
It has disadvantages in that the optical properties are out of the appropriate range or the solubility in dilute nitric acid is poor, making it difficult to remove the coating.

【0055】[0055]

【表1】 [Table 1]

【0056】[0056]

【表2】 注:比較例4の低融点ガラスは、比較例2の低融点ガラ
スと同組成であるが、焼付け温度を異にする。
[Table 2] Note: The low-melting glass of Comparative Example 4 has the same composition as the low-melting glass of Comparative Example 2, but with a different baking temperature.

【0057】[0057]

【発明の効果】本発明によれば、透明電極線の侵食が抑
制されるという顕著な効果を奏する。また、熱物性、光
学特性その他において良好であり、表示パネル基板にお
ける透明絶縁性被膜形成用低融点ガラス、特にガス放電
式表示パネルにおける透明絶縁性被膜形成用低融点ガラ
スとして好適である。
According to the present invention, there is a remarkable effect that erosion of the transparent electrode wire is suppressed. Further, it has good thermophysical properties, optical properties, and the like, and is suitable as a low-melting glass for forming a transparent insulating film on a display panel substrate, particularly a low-melting glass for forming a transparent insulating film in a gas discharge display panel.

【図面の簡単な説明】[Brief description of the drawings]

【図1】気体放電用パネルの概略側断面図である。FIG. 1 is a schematic sectional side view of a gas discharge panel.

【符号の説明】 1--------前面基板ガラス 2--------透明電極 3α------誘電体層 3--------誘電体層(I) 4--------誘電体層(II) 5--------マグネシア層 6--------背面基板ガラス 7--------アドレス電極 8--------蛍光体 9--------隔壁 10--------シール用低融点ガラス 11--------希ガス[Description of Signs] 1 -------- Front substrate glass 2 -------- Transparent electrode 3α ------ Dielectric layer 3 -------- Dielectric layer (I) 4 -------- Dielectric layer (II) 5 -------- Magnesia layer 6 -------- Back substrate glass 7 -------- Address electrode 8 --- Phosphor 9 -------- Partition wall 10 -------- Low melting point glass for sealing 11 -------- Rare gas

───────────────────────────────────────────────────── フロントページの続き (72)発明者 別井 圭一 神奈川県川崎市中原区上小田中4丁目1番 1号 富士通株式会社内 (72)発明者 西川 和浩 三重県松阪市大口町1510番地 セントラル 硝子株式会社硝子研究所内 (72)発明者 高山 亜弓 三重県松阪市大口町1510番地 セントラル 硝子株式会社硝子研究所内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Keiichi Betsui 4-1-1, Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Prefecture Inside Fujitsu Limited (72) Inventor Kazuhiro Nishikawa 1510 Oguchicho, Matsusaka-shi, Mie Central Glass Inside Glass Laboratory Co., Ltd. (72) Inventor Ayumi Takayama 1510 Oguchicho, Matsusaka City, Mie Prefecture Central Glass Corporation Glass Research Laboratory

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】表示パネル用基板に配した透明電極線パタ
ーン上に、透明な絶縁性被膜を形成するための低融点ガ
ラスであって、SiO2−B2O3−PbO −ZnO 系基礎成分に前
記透明電極線の成分をなす酸化物を 0.5〜5wt%の範囲
で含んだことを特徴とする透明絶縁性被膜形成用低融点
ガラス。
1. A low-melting glass for forming a transparent insulating film on a transparent electrode line pattern disposed on a display panel substrate, comprising a SiO 2 —B 2 O 3 —PbO—ZnO-based basic component. A low-melting glass for forming a transparent insulating film, wherein the oxide constituting the transparent electrode wire is contained in the range of 0.5 to 5% by weight.
【請求項2】ガラスの成分組成がwt%で、SiO2 1〜
5、B2O3 15〜30、Al2O3 0〜5、ZnO 8〜25、PbO 30
〜60、CaO、MgO、SrO、BaOより選ばれた1種又は2種以
上を0〜20、透明電極線の成分をなす酸化物を 0.5〜5
の範囲で含み、かつ軟化点が 530℃以下、常温〜 300℃
までの熱膨張係数が77〜90×10ー7/℃であることを特徴
とする請求項1記載の透明絶縁性被膜形成用低融点ガラ
ス。
Wherein in wt% is component composition of the glass, SiO 2. 1 to
5, B 2 O 3 15~30, Al 2 O 3 0~5, ZnO 8~25, PbO 30
-60, one or more selected from CaO, MgO, SrO, and BaO in an amount of 0 to 20, and an oxide constituting a component of the transparent electrode wire in an amount of 0.5 to 5
And the softening point is 530 ° C or less, room temperature to 300 ° C
2. The low-melting glass for forming a transparent insulating film according to claim 1, wherein the coefficient of thermal expansion is up to 77 to 90.times.10.sup. -7 / .degree.
【請求項3】透明電極線パターンを被覆する第1の透明
な絶縁性ガラス被膜形成用低融点ガラスであって、更に
その上に重積する軟化点 480℃以下の低融点ガラスから
なる第2の透明絶縁性ガラス被膜の下地層として形成さ
せたことを特徴とする請求項1または2記載の透明絶縁
性被膜形成用低融点ガラス。
3. A second low-melting glass for forming a transparent insulating glass film for covering a transparent electrode line pattern, further comprising a low-melting glass having a softening point of 480 ° C. or lower which is laminated thereon. 3. The low-melting glass for forming a transparent insulating film according to claim 1, wherein the glass is formed as an underlayer of the transparent insulating glass film.
JP10065715A 1997-03-19 1998-03-16 Low melting point glass for forming transparent insulating film Expired - Fee Related JP2839484B2 (en)

Priority Applications (1)

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JP6584697 1997-03-19
JP9-65846 1997-03-19
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6376400B1 (en) 1999-02-25 2002-04-23 Asahi Glass Company, Limited Low melting point glass for covering electrodes, and glass ceramic composition for covering electrodes
EP1203757A1 (en) * 2000-11-01 2002-05-08 Asahi Glass Co., Ltd. Low melting point glass for covering electrodes, and plasma display device
US6873104B2 (en) * 1997-02-24 2005-03-29 Fujitsu Limited Glass paste composition for forming dielectric layer on electrodes of plasma display panel
JP2007305528A (en) * 2006-05-15 2007-11-22 Fujitsu Hitachi Plasma Display Ltd Plasma display panel and manufacturing method therefor
WO2009088086A1 (en) * 2008-01-10 2009-07-16 Asahi Glass Company, Limited Glass, coating material for light-emitting device, and light-emitting device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873104B2 (en) * 1997-02-24 2005-03-29 Fujitsu Limited Glass paste composition for forming dielectric layer on electrodes of plasma display panel
US6376400B1 (en) 1999-02-25 2002-04-23 Asahi Glass Company, Limited Low melting point glass for covering electrodes, and glass ceramic composition for covering electrodes
EP1203757A1 (en) * 2000-11-01 2002-05-08 Asahi Glass Co., Ltd. Low melting point glass for covering electrodes, and plasma display device
US6617789B2 (en) 2000-11-01 2003-09-09 Asahi Glass Company, Limited Glass for covering electrodes and plasma display panel
JP2007305528A (en) * 2006-05-15 2007-11-22 Fujitsu Hitachi Plasma Display Ltd Plasma display panel and manufacturing method therefor
WO2009088086A1 (en) * 2008-01-10 2009-07-16 Asahi Glass Company, Limited Glass, coating material for light-emitting device, and light-emitting device
JPWO2009088086A1 (en) * 2008-01-10 2011-05-26 旭硝子株式会社 Glass, coating material for light emitting device and light emitting device
US8203169B2 (en) 2008-01-10 2012-06-19 Asahi Glass Company, Limited Glass, coating material for light-emitting devices and light-emitting device
JP5458893B2 (en) * 2008-01-10 2014-04-02 旭硝子株式会社 Glass, coating material for light emitting device and light emitting device

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