JPH10313123A - Transducer using thin film and manufacture thereof - Google Patents

Transducer using thin film and manufacture thereof

Info

Publication number
JPH10313123A
JPH10313123A JP12198997A JP12198997A JPH10313123A JP H10313123 A JPH10313123 A JP H10313123A JP 12198997 A JP12198997 A JP 12198997A JP 12198997 A JP12198997 A JP 12198997A JP H10313123 A JPH10313123 A JP H10313123A
Authority
JP
Japan
Prior art keywords
thin film
conversion
electrode
semiconductor thin
movable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP12198997A
Other languages
Japanese (ja)
Inventor
Manabu Kato
藤 学 加
Original Assignee
Aisin Seiki Co Ltd
アイシン精機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aisin Seiki Co Ltd, アイシン精機株式会社 filed Critical Aisin Seiki Co Ltd
Priority to JP12198997A priority Critical patent/JPH10313123A/en
Publication of JPH10313123A publication Critical patent/JPH10313123A/en
Withdrawn legal-status Critical Current

Links

Abstract

(57) Abstract: To increase the capacitance between a floating comb electrode and a fixed comb electrode. S / N improvement. Drive voltage reduction. Reduction of vibration drive voltage. SOLUTION: Opposite side faces (xz) of comb teeth of a semiconductor thin film 5 floatingly supported on a silicon substrate 1 and comb teeth of fixed electrodes 6, 7, 16, 17 meshing with a gap therebetween.
A mechanical / electrical conversion element for a sensor or a microactuator, in which conductors 13a to 13f are joined to the surface (i.e., surface) to thereby reduce the gap and increase the inter-comb capacitance. The width of the conductors 13a to 13f in the z direction was increased to further increase the inter-comb capacitance.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a micro-shaped mechanical displacement / electrode having a thin film and an electrode floating supported on a substrate.
The present invention relates to an electric signal converter or an electric signal / mechanical displacement converter, and is used for, for example, a flow velocity sensor, an acceleration sensor, an angular velocity sensor, or a microactuator.

[0002]

2. Description of the Related Art A typical example of a converter of this type is a semiconductor thin film (floating body) which is supported on a substrate via an anchor so as to vibrate in the x and z directions, for example, in a y-direction. Comb electrodes each extending in the x direction (floating comb electrodes)
And a comb-tooth electrode (fixed comb-tooth electrode) meshed with and in parallel with the floating comb-tooth electrode in non-contact with the semiconductor thin film fixedly supported on the substrate. When the fluid in contact with the floating body flows in the x direction, the floating body is pulled in the same direction and displaced, and the floating comb tooth electrode is displaced in the x direction with respect to the fixed comb tooth electrode. The capacity changes. By measuring this capacitance, the flow velocity can be determined (for example, TRANSDUCERS '95, EUROSENSORS IX The 8th Inte
rnational Conference on Solid-State Sensors and Ac
tuators, andEurosensors IX. Stockholm, Sweden, Jun
e 25-29, 1995 pp 443-446). Also, when acceleration is applied in the x direction, the acceleration can be measured according to the same principle.

One set of floating comb electrodes on the left side and one set of floating comb electrodes on the right side of the floating body (left floating comb electrode and right floating comb electrode)
And the fixed comb-teeth electrodes are also provided as two sets (a left fixed comb electrode and a right fixed comb electrode which mesh with and are parallel to each set of floating comb electrodes in a non-contact manner), and the left floating comb electrode / left fixed comb tooth By alternately applying a voltage between the electrodes and between the right floating comb electrode and the right fixed comb electrode, the floating body vibrates in the x direction. When the angular velocity of rotation about the y-axis is applied to the floating body, Coriolis force is applied to the floating body, and the vibration of the floating body becomes an elliptical vibration that also oscillates in the z direction. If the floating body is a conductor or an electrode having an xy plane is bonded, and a detection electrode parallel to the xy plane of the floating body is provided on the substrate, the capacitance between the detection electrode and the floating body is reduced. ,
Vibrates according to the z component (angular velocity component) of the elliptical vibration.
By measuring the change (amplitude) of the capacitance, the angular velocity can be obtained (for example, Japanese Patent Laid-Open No. 7-4316).
6, Japanese Patent Application No. 8-249822).

By selectively applying a voltage between the left floating comb electrode / left fixed comb electrode and between the right floating comb electrode / right fixed comb electrode, the floating body moves left or right. The floating body can be used as an x-drive actuator of a microactuator. Further, since the floating body moves in the z direction depending on the voltage and polarity applied between the floating body and the detection electrode, the floating body can be used as a z-drive actuator.

Conventionally, in a conversion element of this type using a semiconductor thin film as a floating body, the floating element is driven alternately by electrostatic drive in the x direction parallel to the substrate or displacement is detected by capacitance. A comb-shaped electrode or a parallel plate electrode has been used, and these electrodes have been used for etching a semiconductor thin film (xz plane, yz plane).

An outline of an example of a conventional conversion element manufacturing method using a comb electrode will be described with reference to FIG. Using a Si substrate as a substrate 1 (FIG. 2A), a 100 nm thick Si 3 N 4 film is formed as an insulating layer 2 by an LP-CVD method (FIG. 2B), and further etching by an LP-CVD method. As the layer 3, a 2 μm PSG film is formed.

Next, in a photolithographic etching step, support portions 4a to 4d for holding floating body 5 made of P-doped polycrystalline Si to be formed later on substrate 1 and fixed comb-tooth electrodes 6, 7 for fixing. support portion 4e, 4f, by etching the PSG film 3 of the wiring and the pad part 4g~4i [shown in FIG. 2 (c)], to expose the the Si 3 N 4 film 2.

[0008] Then the P-doped polycrystalline layer of Si 5 to 7 (the entire surface of the substrate 1) is 2μm formed by the LP-CVD method, in N 2 atmosphere for the purpose of activation of the internal stress relaxation and impurities 1050 ° C Is performed. Layer 5 of the above polycrystalline Si
7 (covering the entire surface of the substrate 1) is etched into a desired shape of a floating body, a beam, a fixed electrode, a comb electrode, a wiring, an electrode pad, etc. by a photolithographic etching process (FIG. 2 (d)). .

Next, the electrode pad 5 is formed by a lift-off method.
Metals 8a to 8c for connection electrodes are formed on g, 6c, and 7c (FIG. 2D) [FIG. 2E]. Then, the etching layer 3 is removed. Thereby, a gap is formed between the floating body 5 and the insulating layer 2 on the substrate 1 (FIG. 2 (f)).

Thus, the ends of the beams (four) of the floating body 5 are joined to the insulating layer 2 by the support portions 4a to 4d in the z-direction, and the flat (four) beams continuous with the beams (four) are formed. The body trunk 5h is separated from the insulating layer 2 on the substrate 1 in the z direction, and the beams (four) can be displaced in the x direction and the z direction by bending of the beams (four). The comb electrodes 5e and 5f are branched from the main trunk 5h and protrude in the x direction, and the comb electrodes 6b and 7b of the fixed electrodes 6 and 7 are inserted into the comb gap of the comb electrodes 5e and 5f.

[0011]

The floating-side comb-teeth electrodes 5e and 5f and the fixed-side comb-teeth electrode 6 formed as described above.
The distance between the electrodes b and 7b (the y direction and the x direction) is determined by a photolithographic etching process, and the floating comb-shaped electrodes 5e and 5f with respect to the displacement of the main body 5 of the floating body 5 in the x direction.
The change in the capacitance between the fixed-side comb-teeth electrodes 6b and 7b is small.

The driving force and detection sensitivity of the comb electrode are proportional to the change in capacitance with respect to displacement, and the driving force and detection sensitivity are proportional to the thickness of the floating body 5 and inversely proportional to the distance between the electrodes. However, an increase in the thickness of the semiconductor thin films (5 to 7) causes a decrease in throughput, and a reduction in the distance between the electrodes is limited by restrictions on the production of the conversion element.

For this reason, the driving force and the detection sensitivity cannot be said to be sufficient, and the conventional comb-tooth electrode has a problem that the driving force or the detection sensitivity is low, the required driving voltage is high, and the S / N ratio is low. Raising the driving voltage to increase the driving force increases the voltage at which the driving voltage leaks to the detection electrode via a stray capacitance or the like, thereby causing further deterioration of the S / N ratio. The first object of the present invention is to increase the capacitance between the floating-side electrode and the fixed-side electrode, and to increase the S / N in a mode of use as a sensor as an actuator. In a usage mode, a second object is to reduce a driving voltage for obtaining a required driving force. In the above-mentioned mode of use as a vibrator (angular velocity sensor), an object is to obtain a relatively high vibration driving force by applying a relatively low vibration driving voltage.

[0014]

[Means for Solving the Problems]

(1) The present invention provides a substrate (1) having an xy plane,
The conductive movable thin film (5) supported so as to vibrate in at least one of the x, y and z directions and parallel to the xy plane of the substrate (1).
h), and a fixed electrode (6, 7, 16, 17) fixed to the substrate (1) and having a surface facing the side surface of the movable thin film (5h), the conversion element using a thin film, The movable additional electrodes (13c, 13d) joined to the side surfaces of the thin film (5h) are provided. In addition, in order to facilitate understanding, in parentheses, symbols shown in the drawings and attached to corresponding elements or equivalent members of the embodiments described later are added for reference.

According to this, the movable side additional electrodes (13c, 13d) are provided on the side surface of the movable thin film (5h), and the distance between the movable side additional electrodes (13c, 13d) and the side surfaces of the fixed electrodes (6, 7, 16, 17) is increased by the thickness. Because it is shortened,
The distance between the movable side additional electrode and the fixed electrode is short, and the capacitance between them is large. Therefore, the S / N is high in the mode of use as a sensor, and the required driving voltage is low in the mode of use as an actuator. In the mode of use as the vibrator (angular velocity sensor) described above, the vibration drive voltage can be reduced. The thickness of the movable thin film (5h) does not need to be particularly large.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION

(2) The movable thin film (5h) includes a base (5h) extending in the y direction and a plurality of movable sides parallel to each other with a gap in the y direction, branching from the base (5h) and extending in the x direction. Comb-shaped teeth (5e); said movable-side additional electrodes (13c, 13d) are movable-side comb-teeth (5e).
The fixed electrode (6, 7, 16, 17) has a backbone extending in the y direction and a plurality of fixed side comb teeth (branch extending from the backbone and extending in the x direction and located in the gap). 6b, 16b)
Having. Since the additional electrodes (13c, 13d) of the movable comb teeth (5e) reduce the gap with the fixed comb teeth (6b, 16b), the movable comb teeth (5e) and the fixed comb teeth (6b, The gap of 16b) is short and the effect of increasing the capacitance between them is high.

(3) The movable comb electrodes (13c, 13d) connected to the side surfaces of the movable comb teeth (5e) are connected to the movable comb electrodes (13c, 13d).
(5e) a back conductor (9b) joined to the xy back surface on the back side of the surface facing the substrate (1). According to this, the conductivity of the movable thin film (5h) is increased by the back conductor (9b), and the movable thin film (5) may be an insulator. Further, the back conductor (9b) can be used as an electrode parallel to the xy plane of the substrate (1) (a counter electrode parallel to the xy plane electrode on the substrate 1).

(4) The movable side additional electrodes (13c, 13d)
The movable thin film (5h) has a width in the z direction larger than the thickness in the z direction. According to this, the additional electrodes (13c, 13d) are wider than the film thickness of the movable thin film (5h), the electrode area is large, and the effect of increasing the capacitance is high.

(5) The movable thin film (5h) is a semiconductor thin film; the movable side additional electrodes (13c, 13d) are Si, Ge, SixGe1 -x , SiC or SixGeyC doped with conductive impurities. 1-xy or gold, platinum, V, Nb, T
a, W, Mo, molybdenum silicide or tungsten silicide.

According to this, the movable thin film (5h) can be manufactured finely by a semiconductor processing process, and a fine conversion element can be obtained. The side surfaces (xz plane, yz plane) due to the fineness, particularly, the thin movable thin film (5h)
Is small and the capacitance due to the side facing the fixed electrode is small, but the gap between the electrodes is shortened by the additional electrodes (13c, 13d), and the capacitance is increased. In the case of the above (4), a capacitance is further increased, and a mechanical displacement / electrical conversion element having a small S / N but a high mechanical displacement with respect to a driving voltage, though having a small size, is used. can get.

(6) A step of forming an etching layer (3) on the substrate (1), and forming a semiconductor thin film (5) above the etching layer (3).
Forming a floating body (5h) having first comb teeth (5e) by photolithographic etching;
And second comb teeth arranged to engage with the first comb teeth (5e)
(6b, 16b) processing to a fixed body having (6, 7, 16, 17),
And removing at least a part of the etching layer (3) and moving the floating body (5h) with respect to the substrate (1), comprising a method of manufacturing a conversion element using a semiconductor thin film,
After processing the semiconductor thin film (5 to 7) into a comb-like shape, a conductor (13) is formed on at least the opposing surfaces of the first and second comb-like teeth (5e, 6b, 16b).
a to 13f). A method for manufacturing a conversion element using a semiconductor thin film, the method comprising:

According to this, although the size is small, S
A conversion element having a high / N and a large mechanical displacement with respect to the drive voltage can be obtained.

(7) Step of forming an etching layer (3) on the substrate (1), wherein a semiconductor thin film (5 to 5) is formed above the etching layer (3).
7) forming a semiconductor thin film (5-7) by photolithographic etching with a floating body (5h) having a first electrode (5e) having a surface substantially orthogonal to the substrate (1); Processing a fixed electrode (6, 16) having a second electrode (6b, 16b) arranged to form a parallel plate electrode in pairs with the first electrode (5e); Removing at least a part of the layer (3) and moving the floating body (5h) relative to the substrate (1), the method of manufacturing a conversion element using a semiconductor thin film, the semiconductor thin film (5 ~ 7) After the photolithographic etching of 7), conversion using a semiconductor thin film, characterized in that conductors (13a to 13f) are formed on at least opposing surfaces of the first and second electrodes (5e, 6b, 16b). Device manufacturing method.

According to this, although the size is small, S
A conversion element having a high / N and a large mechanical displacement with respect to the drive voltage can be obtained.

(8) The first and second electrodes (5e, 6b, 16) are selectively grown on the semiconductor thin films (5-7) by conductors.
(6) or (7), wherein the conductors (13a to 13f) are formed on at least the opposing surfaces in b).

(9) The conductors (13a to 13f) are connected to the electrodes (5e,
The above (8), which is Si, Ge or SixGe 1-x doped with the same conductivity as 6b, 16b), or W or Mo.

(10) The conductor (13a
(13) or (7) above.

(11) A conductive thin film is isotropically formed on the semiconductor thin films (5 to 7) and at least one of the first and second electrodes (5e, 6b, 16b) is anisotropically etched. The above (6) or (7), wherein the conductive film (13a to 13f) is formed by leaving the conductive thin film on the opposing surfaces and removing the others.

(12) The conductive thin films (13a to 13f) are made of Si, Ge, SixGe 1-x , Si doped with conductive impurities.
C or SixGeyC 1-xy or gold, platinum,
At least one of V, Nb, Ta, W, Mo, molybdenum silicide or tungsten silicide;
The above (11).

(13) At least one of a plasma CVD method, a thermal CVD method, a sputtering method, and a plating method is used for forming the conductive thin films (13a to 13f);

(14) Anisotropic etching is one of ion milling, ECR plasma etching, RIE and etching using another plasma; the above (11).

(15) Before forming the conductive thin films (13a to 13f), at least a part of the thin film (3) formed below the semiconductor thin films (5 to 7) is formed at least in the electrode regions (5e, 6b, 16b). Etching into the same shape as the semiconductor thin film described in (11) above.

(16) Electrode area of the semiconductor thin film (5-7)
Etching of the thin film (3) formed below the semiconductor thin film of (5e, 6b) is the same mask as the etching of the semiconductor thin film (5 to 7), or the semiconductor thin film after etching (5e, 6b, 16b), Is used as a mask; (15) above.

(17) Before forming the conductive thin films (13a to 13f), a thin film (11) having the same shape as the semiconductor thin films (5 to 7) is formed at least above the electrode regions of the semiconductor thin films (5 to 7). (11).

(18) The mask used in the etching of the semiconductor thin films (5 to 7) is a thin film (11) formed above the electrode region.
A mask (12) for etching the thin film or the thin film (11) after the etching; (17).

(19) The thin film (11) is an etching layer (3)
The same material as described above; (17) or (18) above.

(20) The above (8), (10) and (1)
Conductors (13a to 13a) can be obtained by combining or repeating the steps 1).
f) is formed; (6) or (7) above.

[0038]

【Example】

-First Embodiment- FIG. 1 shows an embodiment of the present invention. In this embodiment, a flow velocity sensor or an acceleration sensor for detecting a flow velocity or an acceleration in the x direction or a microactuator for driving the floating trunk 5h in the x direction is used. (F) of FIG.
1 shows a cross section taken along line 3A-3A in FIG.

Please refer to FIG. 1 and FIG.
On the silicon substrate 1 on which the insulating layer 2 is formed, a floating body anchor 5a made of polysilicon containing impurities for making it conductive.
5d and the fixed electrode anchor 6c are joined, and the floating body 5 and the fixed electrodes 6, 7, 16, 17 are connected to the connection electrode 8 by the wiring (6d, 7d, etc.) formed on the insulating layer 2. It is connected. Note that a substrate having conductivity (n) opposite to the conductivity type (p) of the polysilicon is used for the silicon substrate 1 and wiring is formed on the silicon substrate 1 by pn junction.
The wiring, the floating body anchor 5 and the fixed electrode anchor 6c, and the anchor portion of the connection electrode 8 may be joined. Support beams 5i to 5L extending in the y direction are continuous with the floating body anchors 5a to 5d, and a floating trunk 5h substantially parallel to the surface of the substrate 1 is continuous with these support beams 5i to 5L.

A plurality of movable comb teeth 5 distributed in the y direction in the right and left directions (x direction) at equal pitches from the floating backbone 5h.
e and 5f protrude. One fixed electrode anchor 6c
The base 6a of the fixed electrode 6 is continuous (just below the connection electrode 8b), and the base 6a has a comb-shaped fixed comb electrode 6b that has entered the inter-tooth slot of the movable comb tooth 5e. The other fixed electrode anchor (directly below the connection electrode 8c)
The base 7a of the fixed electrode 7 is continuous, and the base 7a has a comb-shaped fixed comb electrode 7b that has entered the inter-tooth slot of the movable comb tooth 5f. There is a minute gap between the movable comb teeth 5e, 5f and the fixed comb electrodes 6b, 7b.

The above-mentioned support beams 5i to 5L, floating base 5h
And the fixed comb-teeth electrodes 6b, 7b
Away in direction. That is, it faces the surface of the substrate 1 with a gap. These are formed integrally and continuously with the floating body anchor and the fixed electrode anchor when the floating body anchor and the fixed electrode anchor are formed on the surface of the silicon substrate 1 by a micromachining technique.

Floating body 5 (supporting beams 5i to 5L, floating backbone 5
h) and side surfaces of the fixed electrodes 6 and 7 (planes perpendicular to the xy plane of the substrate 1), that is, the xz plane and the yz plane, are joined with conductors. 13c and 13 shown in FIG.
d is a conductor joined to the side surface of the movable comb tooth 5e, 13
Reference numerals a and 13b denote conductors joined to the side surfaces of the fixed comb electrode 6b.

Since the conductors 13a to 13d are joined to the side surfaces, the gap (x and y directions, especially y direction) between the movable comb tooth 5e and the fixed comb tooth electrode 6b is reduced. The conductors 13c, 1 of the movable comb teeth 5e
The capacitance between 3d and the fixed comb electrode 6b is large. As described later, the movable comb teeth 5e and the fixed comb electrodes 6b are finely formed by photolithographic etching.
Although there is a limit to shorten the direction gap, the conductor 13
With the formation of a to 13d, this gap can be made shorter than the limit, and the capacitance can be increased accordingly.

Next, the manufacturing process of the conversion element shown in FIG. 1 will be described. FIGS. 3A to 3E show 3A-
3 shows a cross section in the process of manufacture corresponding to the cross section of line 3A.

A. An Si substrate was used as the substrate 1 (FIG. 2A), and Si 3 N was used as the insulating layer 2 by LP-CVD.
Four films were formed to a thickness of 100 nm [FIG.
-2 μm PSG film as etching layer 3 by CVD method
m.

B. Next, a floating body 5 made of P-doped polycrystalline Si to be formed later is formed by a photolithography etching process.
Etching the PSG film 3 of the support portions 4a to 4d for holding the substrate on the substrate 1, the support portions 4e and 4f for fixing the fixed comb electrodes 6 and 7, the wiring and the pad portions 4g to 4i,
The Si 3 N 4 film 2 is exposed [FIG. 2 (c)].

C. Next, the P-doped polycrystalline Si thin films 5 to 7 (entire surface area of the substrate 1) are formed to a thickness of 2 μm by LP-CVD.
Then, the PSG film 11 is formed by LP-CVD.
It is formed to a thickness of 00 nm (FIG. 3A). The above PSG
The film 11 may not be provided, and instead of the PSG film 11, S
An iO 2 film or SiN film may be used.

D. Next, a resist pattern 12 is formed (FIG. 3 (b)), and the polycrystalline Si thin films 5 to 7 and the PSG film 11 are removed by anisotropic etching using the resist pattern 12 as a mask. 5h,
Beams 5i-5L, fixed electrodes 6, 7, comb electrodes 5e, 5f,
6b, 7b, wiring 6d, 7d, electrode pads 5g, 6c,
Etching into a shape such as 7c [FIG. 3 (c)], and removing the resist pattern 12 [FIG. 2 (d), FIG. 3 (d)].

E. Next, P-doped polycrystalline Si thin films 13a to 13d are formed as conductors by selective growth by LP-CVD, and the distance between the electrodes is set to a desired distance (FIG. 3E).

The polycrystalline Si 5-7 and the conductor 13
a to 13d may be p-type, may be formed undoped, and may be doped by ion implantation, diffusion, or the like.

F. Next, heat treatment is performed for the purpose of relaxing internal stress and activating impurities. Note that a PSG film, SiO 2 film, SiN film or the like may be formed as a protective film on the surface before the heat treatment, and may be removed after the heat treatment.

The conductors 13a to 13d are formed by using Ge, Mo,
Selective growth of W or electroplating of gold or the like may be used. When the conductors 13a to 13d are metal, it is preferable to perform the heat treatment before forming the conductors 13a to 13d.

G. After the heat treatment, the connection electrodes (metal) 8a to 8c are formed on the electrode pads 5g, 6c, and 7c as in the conventional example.
Is formed [FIG. 2 (e)]. Then, the mask layer 11 and the etching layer 3 are removed [(f) of FIGS.
FIG. 3 (f)]. As a result, the floating plate 5h and the beams 5i-5
A gap is formed between the L and the comb electrodes 5e, 5f, 6b, 7b and the substrate 1, and the floating trunk 5h and the beams 5i to 5L become movable. When the conductors 13a to 13d are made of metal,
Connection electrodes 8a to 8c on electrode pads 5g, 6c, 7c
Can be formed at the same time.

In the conversion element (FIG. 1) manufactured as described above, the distance between the interdigital electrodes is shorter than that of the conventional interdigital electrode due to the conductors 13a to 13d. The movable comb electrodes 5e and 5f and the fixed comb electrode 6 for the displacement of the floating plate 5h in the x direction
The change in capacitance between b and 7b is large, and the S / N is high.
An actuator for applying a driving voltage or an oscillating voltage between the movable comb electrodes 5e, 5f and the fixed comb electrodes 6b, 7b to drive the floating plate 5h in the x direction or an angular velocity sensor for exciting the floating plate 5h in the x direction. When used, the driving force of the floating plate 5h can be increased.

Second Embodiment FIGS. 4A to 4E show cross sections of the second embodiment in the process of manufacturing, corresponding to the cross section taken along line 3A-3A shown in FIG. Second
In the embodiment, the above C.I. In the step of
After forming P-doped polycrystalline Si thin films 5 to 7 (entire surface of substrate 1) at 2 μm by P-CVD, a conductor layer pattern 9 having the same pattern as resist pattern 12 to be formed later is formed.
After forming (9a, 9b) [FIG. 4 (a)], a PSG film 11 is formed to a thickness of 100 nm by LP-CVD [FIG. 4 (b)]. The subsequent manufacturing steps ((b) to (g) of FIG. 4) are performed in the first embodiment described above ((a) of FIG. 3).
To (f)].

According to this embodiment, the floating trunk 5h and the beam 5
i to 5L, fixed electrodes 6, 7, comb electrodes 5e, 5f, 6
b, 7b, wiring 6d, 7d, electrode pads 5g, 6c, 7
c, etc., on the back surface (xy
The conductors 9a and 9b are formed on the (surface), and the conductors 13a to 13d, 9a and 9b have a U-shape (FIG. 4 (g)) in the yz cross section of the comb tooth portion. The conductor layer pattern 9
(9a, 9b) The distribution and shape of the back conductor can be arbitrarily determined by changing the pattern shape shown in FIG.

Third Embodiment FIGS. 5A to 5G show cross sections in the process of manufacturing the third embodiment corresponding to the cross section taken along line 3A-3A shown in FIG. In the third embodiment, as in the first embodiment, the A.I. ~ D. At this time, the polycrystalline Si thin films 5 to 7 and the PSG film 11 are converted into the desired floating backbone 5h, beams 5i to 5L, fixed electrodes 6, 7, and
Etching into the shape of the comb-teeth electrodes 5e, 5f, 6b, 7b, wirings 6d, 7d, electrode pads 5g, 6c, 7c, etc.
The resist pattern 12 is removed [FIGS.
(D), (a) to (d) of FIG.

E. Next, a P-doped polycrystalline Si thin film 13 is formed by the LP-CVD method, and the distance between the electrodes is set to a desired distance (FIG. 5E). The above polycrystal Si 5-7,
The conductor 13 may be p-type, or may be formed undoped and doped by ion implantation, diffusion, or the like.

The conductor 13 is made of Ge, SixGe 1-x ,
SiC, SixGeyC 1-xy , gold, platinum, V, Nb, Ta,
W, Mo, molybdenum silicide or tungsten silicide may be used.
Any means that can be generated isotropically (having good step coverage) such as a plasma CVD method and a sputtering method may be used.

F. Next, heat treatment is performed for the purpose of relaxing internal stress and activating impurities. Before the heat treatment, a PSG film, a SiO 2 film, a SiN film, etc. are formed on the surface as a protective film.
It may be removed after the heat treatment. When the conductor 13 is a metal, the heat treatment is preferably performed before the conductor 13 is formed.

G. Next, the conductor 13 is etched by RIE so that a plane orthogonal to the substrate 1 (xz
Conductors 13 (13a to 13a) formed on
The conductor 13 formed parallel to the substrate 1 except for d)
Is removed [(f) of FIG. 5]. In place of the etching of the conductor 25 by RIE, anisotropic chemical etching using plasma or ions such as ECR plasma etching or physical anisotropic etching such as ion milling may be used.

H. After the etching of the conductor 13, connection electrodes (metals) 8a to 8c are formed on the electrode pads 5g, 6c and 7c in the same manner as in the conventional example [FIG. 2 (e)]. Then, the mask layer 11 and the etching layer 3 are removed [FIGS. 1 and 2 (f) and FIG. 5 (g)]. Thereby, the floating trunk 5h, the beams 5i to 5L, and the comb electrodes 5e, 5f, 6
An air gap is formed between b and 7b and the substrate 1, and the floating trunk 5h and the beams 5i to 5L become movable.

Fourth Embodiment FIGS. 6A to 6G show cross sections in the process of manufacturing the fourth embodiment corresponding to the cross section taken along line 3A-3A shown in FIG. In the fourth embodiment, as in the first embodiment, A.I. ~ C. At this time, the polycrystalline Si thin films 5 to 7 and the PSG film 11 are converted into the desired floating backbone 5h, beams 5i to 5L, fixed electrodes 6, 7, and
Etching into the shape of the comb electrodes 5e, 5f, 6b, 7b, wirings 6d, 7d, electrode pads 5g, 6c, 7c, etc. [(a) to (c) in FIG. 2 and (a) to (c) in FIG. )]. However, the thickness of the etching layer 3 is 4 μm. D. By using a mask 12 having the same pattern as the etching pattern of the polycrystalline Si thin film 11 (the same resist mask may be used, or the patterned polycrystalline Si thin film 11 may be used as a mask).
By etching the etching layer 3 by 2 μm, the thickness of the etching layer 3 is 4 μm at the masked portion.
The exposed portion has a shape of 2 μm (FIG. 6D). Subsequent processing is performed in accordance with E.3 of the third embodiment. ~
H. The processing is the same as that described above.

According to the fourth embodiment, as shown in FIG. 6G, the conductors 13a to 13d are
The conductors 13c and 13d of the movable comb teeth 5e and the fixed comb teeth 6
b has a large opposing area with the conductors 13a and 13b. In addition to an increase in capacitance due to a reduction in the gap between the electrodes by the conductors 13a to 13d, an increase in capacitance due to an increase in the opposing area is added. Alternatively, when used as an acceleration sensor, the change in the capacitance between the movable comb electrodes 5e, 5f and the fixed comb electrodes 6b, 7b with respect to the displacement of the floating trunk 5h in the x direction is even greater, and the S / N is high. An actuator for applying a driving voltage or an oscillating voltage between the movable comb electrodes 5e, 5f and the fixed comb electrodes 6b, 7b to drive the floating trunk 5h in the x direction or an angular velocity sensor for exciting the floating trunk 5h in the x direction. When used, the driving force of the floating trunk 5h further increases.

Fifth Embodiment FIGS. 7A to 7G show cross sections of the fifth embodiment in the process of manufacture, corresponding to the cross section taken along line 3A-3A shown in FIG. In the fifth embodiment, as in the first embodiment, A.I. ~ C. At this time, the polycrystalline Si thin films 5 to 7 and the PSG film 11 are converted into the desired floating backbone 5h, beams 5i to 5L, fixed electrodes 6, 7, and
Etching into the shape of the comb electrodes 5e, 5f, 6b, 7b, wirings 6d, 7d, electrode pads 5g, 6c, 7c, etc. [(a) to (c) in FIG. 2 and (a) to (c) in FIG. )]. However, the PSG film 11 is 2 μm. Subsequent processing is performed in accordance with E.3 of the third embodiment. ~ H. The processing is the same as that described above.

According to the fifth embodiment, as shown in FIG. 7 (g), the conductors 13a to 13d are
In this case, the conductors 13c and 13d of the movable comb teeth 5e and the conductors 13a and 13b of the fixed comb teeth 6b have a larger opposing area.

-Sixth Embodiment- In this sixth embodiment, as in the first embodiment, the A.I. ~ C.
At this time, the polycrystalline Si thin films 5 to 7 and the PSG film 11 are converted to the desired floating backbone 5h, beams 5i to 5L, fixed electrodes 6,
7, comb-teeth electrodes 5e, 5f, 6b, 7b, wirings 6d, 7
d, etching into electrode pads 5g, 6c, 7c, etc. [(a) to (c) in FIG. 2, (a) to (a) in FIG.
(C)]. However, the etching layer 3 is set to 4 μm, and PS
The thickness of the G film 11 is 2 μm.

The subsequent processing is the same as that of the above-described fourth embodiment. This is the same as the following processing.

According to the sixth embodiment, the conductors 13a to 13a
13d is the additional width shown in FIG. 6 (g), which is closer to the substrate 1 than the comb teeth 5e, 6b, and FIG. 7 (g).
The conductors 13c and 13d of the movable comb teeth 5e and the fixed comb teeth have a width obtained by adding the additional width extending above the substrate 1 beyond the comb teeth 5e and 6b to the comb tooth thickness (z direction). 6b conductor 1
The area facing 3a and 13b is extremely large.

Each of the first to sixth embodiments described above describes a comb-shaped electrode used for electrostatic drive and detection due to a capacitance change due to a change in the effective electrode area acting as a capacitor due to the overlapping of the paired electrodes. However, by using the same process as the manufacturing process of each of the above-described embodiments, the driving force and the detection signal of the parallel plate electrode used for the electrostatic driving and detection due to the capacitance change due to the change in the distance between the electrodes are also used. We can expect an increase. Several examples of the embodiment of the parallel plate electrode will be described below.

Seventh Embodiment FIG. 8 shows a seventh embodiment of the present invention, and FIG. 9A shows a cross section taken along line 9A-9A. This conversion element is used as an acceleration sensor for detecting acceleration in the y direction, a flow rate sensor for detecting a flow rate in the y direction, or a microactuator for driving the floating trunk 5h in the y direction.

Please refer to FIG. 8 and FIG.
A floating body anchor and a fixed electrode anchor made of polysilicon containing an impurity to make it conductive are joined to the insulating silicon substrate 1. Support beams 5i to 5L extending in the x direction are continuous with the floating body anchor.
i to 5L, a floating backbone 5h substantially parallel to the surface of the substrate 1
Is continuous.

A plurality of movable comb teeth 5 distributed in the y direction in the left and right directions (x direction) at equal pitches from the floating backbone 5h.
e is protruding. One fixed electrode anchor (connection electrode 8
b), the first group of first fixed electrodes 6 is continuous with the first group, and the first group of first groups of first groups that have entered the interdental slots of the movable comb teeth 5e are connected to the first group. There is a fixed comb electrode 6b having a comb-like shape, and another fixed electrode anchor (connection electrode 8).
c), the backbone of the first set of second fixed electrodes 7 is continuous, and the backbone of the first set of the second group, which has entered the interdental slot of the movable comb tooth, is connected to the backbone. There is a comb-shaped fixed comb electrode.

The backbone extending in the y direction of the first set of fixed electrodes 6 and 7 is at a lower level (z direction) than the floating backbone 5h, and the first set of fixed comb-teeth electrodes (6b) has one end. At the same time, it rises in the z direction continuously in the z direction, and is at the same level as the floating trunk 5h. There is a small gap between the movable comb teeth 5e and the first set of fixed comb electrodes (6b).

Further, a base of the second set of first fixed electrodes 16 is continuous with another fixed electrode anchor (immediately below the connection electrode 8d). 1
There is a second set of comb-shaped fixed comb electrodes 16b of the first group, which has entered the space between the fixed comb electrodes 6b of the first group of the set, and another fixed electrode. A base of the second set of second fixed electrodes 17 is continuous with the anchor (immediately below the connection electrode 8e). The base also includes a movable comb tooth protruding from the floating base 5h and a second set of second fixed electrodes 17. There is a second set of comb-shaped fixed comb electrodes of the second group, which enter the space between the first set of fixed comb electrodes of the second group protruding from the fixed electrode 7.

Note that y of the second set of fixed electrodes 16 and 17
The trunk extending in the direction is separated from the first set in the x direction, and the floating trunk 5h is similar to the fixed electrode of the first embodiment.
And the second set of first and second groups of fixed comb electrodes (16, 17)
The upper ends of the bases 6 and 17 protrude in the x direction, and a gap (for insulation) is provided between the bases of the first set of fixed electrodes 6 and 7 so as to cross over the bases in the x direction. That is,
The fixed electrodes 6, 7, 16, and 17 are electrically separated (insulated) from each other, and are also electrically separated from the floating backbone 5h. The set of fixed comb electrodes (6b) and the second set of fixed comb electrodes (16
There is a small gap between each of the three cases b).

The above-mentioned support beams 5i to 5L and floating backbone 5h
The fixed comb electrodes 6b and 16b are separated from the surface of the substrate 1 in the z direction. That is, it faces the surface of the substrate 1 with a gap. These are formed integrally and continuously with the floating body anchor and the fixed electrode anchor when the floating body anchor and the fixed electrode anchor are formed on the surface of the silicon substrate 1 by a micromachining technique.

Floating body 5 (support beams 5i to 5L, floating backbone 5
h) and side surfaces of the fixed electrodes 6, 7, 16, 17 (substrate 1)
Plane perpendicular to the xy plane), ie, xz plane and yz plane
A conductor is bonded to the surface. 1 shown in FIG.
The conductors 3c and 13d are joined to the side surfaces of the movable comb teeth 5e, the conductors 13a and 13b are joined to the side surfaces of the first fixed comb electrode 6b, and the fixed combs 13e and 13f are the second set. It is a conductor bonded to the tooth electrode 16b.

Since the conductors 13a to 13f are joined to the side surfaces, the gap (y) between the movable comb tooth 5e, the first set of fixed comb electrodes 6b, and the second set of fixed comb electrodes 16b is determined. Direction) is small, so that the capacitances of the conductors 13c and 13d of the movable comb teeth 5e, the first set of fixed comb electrodes 6b, and the second set of fixed comb electrodes 16b are large. The movable comb tooth 5e and the fixed comb tooth electrode 6b,
16b is finely formed by photolithographic etching,
Due to the restrictions in the manufacturing process, there is a limit in shortening the gap in the y direction between the movable comb teeth 5e and the fixed comb electrodes 6b and 16b. However, this gap is made smaller than the limit by forming the conductors 13a to 13f. The length can be further reduced, and the capacitance can be increased accordingly.

When acceleration in the y direction is applied to the floating backbone 5h shown in FIG. 8, the supporting backbones 5i to 5L tend to bend in the y direction, so that the floating backbone 5h is displaced in the y direction with respect to the substrate 1. Thereby, the first capacitance formed between (the comb teeth of) the first set of fixed electrodes 6, 7 and (the comb teeth of) the floating base 5h, and the second set of fixed electrodes 16, 17 are formed. One of the second capacitances formed between (the comb tooth) and the floating trunk 5h (the comb tooth) increases and the other decreases, and the difference (absolute value) between the two.
Increase. The acceleration can be detected by detecting the difference between the first and second capacitances.

The conversion element of the seventh embodiment is manufactured in substantially the same manner as the manufacturing process of the first embodiment. However,
The above-mentioned A. Before forming the insulating layer 2, a conductive layer serving as a backbone of the first set of fixed electrodes 6 and 7 is formed on the surface of the substrate 1 or on the insulating layer formed thereon. After the insulating layer 2 is formed on the entire surface, an opening is formed in the insulating layer 2 for joining the comb-shaped electrodes (6b) of the first set of fixed electrodes 6 and 7 to the conductive layer immediately below the insulating layer 2. Then, an etching layer 3 is formed on the entire surface. Next step B. Then, the openings, the support parts 4a to 4d, the support parts 4e and 4f for fixing the fixed comb electrodes 6 and 7, the wiring and the pad parts 4g to 4i.
Is etched.

The subsequent steps are the same as those in the above-described step C.1 of the first embodiment. ~ G. Is the same as As a result, a parallel plate electrode type conversion element in which the conductive layers 13a to 13f are formed on the side surfaces of the comb teeth as shown in FIG. 9A is obtained.

-Eighth Embodiment- A parallel plate electrode type conversion element according to an eighth embodiment is different from the second embodiment in that the conversion steps (A. and B.E.) of the seventh embodiment are performed.
As in the second embodiment (FIG. 4 (g)), as shown in FIG. 9 (b), the floating backbone 5h, beams 5i-5L, fixed electrodes 6, 7, and 16, 17,
Conductors 9a and 9b are formed on the back surface (xy plane) of the surface of the substrate 1 facing the xy plane, such as comb teeth, wiring, and electrode pads.
1313f, 9a, 9b have a U-shape.

Ninth Embodiment A parallel plate electrode type conversion element according to a ninth embodiment is different from the fourth embodiment in that the conversion step (A. and B.1) of the seventh embodiment is performed.
As shown in FIG. 9C, the conductors 13a to 13f are placed closer to the substrate 1 than the comb teeth, as in the fourth embodiment (FIG. 6G). The extended width (z) is obtained. Movable comb-shaped conductor 13c, 1
3d and fixed comb-shaped conductors 13a, 13b, 13e, 13
The area facing f is large, and the capacitance changes greatly with respect to the displacement of the floating trunk 5h in the y direction.

Tenth Embodiment A parallel plate electrode type conversion element according to a tenth embodiment is obtained by adding the modification steps (the modifications A and B) of the seventh embodiment to the steps of the fifth embodiment. Thus, similarly to the fifth embodiment (FIG. 7 (g)), as shown in FIG. 9 (d), the conductors 13a to 13f can be extended over the wide width (z) extending above the comb teeth.
It was made. The opposing areas of the movable comb-teeth conductors 13c, 13d and the fixed comb-teeth conductors 13a, 13b, 13e, 13f are large, and the capacitance changes greatly with respect to the displacement of the floating trunk 5h in the y direction.

Eleventh Embodiment The parallel plate electrode type conversion element of the eleventh embodiment is obtained by adding the modification steps (the modifications A and B) of the seventh embodiment to the steps of the sixth embodiment. Thus, similarly to the sixth embodiment, as shown in FIG. 9E, the conductors 13a to 13f
Is wider (z) extending below and above the comb teeth
It is what was made. Movable comb-shaped conductor 13c, 1
3d and fixed comb-shaped conductors 13a, 13b, 13e, 13
The area facing f is larger, and the change in capacitance with respect to the displacement of the floating trunk 5h in the y direction is further larger.

The parallel plate electrode type conversion elements of the seventh to eleventh embodiments can be applied to a flow rate sensor for detecting a flow rate in the y direction. Furthermore, the first and second sets of fixed electrodes 6, 7 and 16, 17 are given potentials of opposite polarity, and the polarity and level of the potential applied to the floating body 5 are changed so that the floating body 5 moves in the y direction. Since it is driven, it can be used as an electrostatically driven actuator.

[Brief description of the drawings]

FIG. 1 is a plan view of a conversion element according to a first embodiment of the present invention.

FIG. 2 is a reduced plan view showing the shape of a material being manufactured, which is common to the conventional conversion element and the first embodiment;
(A) is a plan view of the substrate 1, (b) is a plan view of the insulating layer 2 formed on the substrate 1, (c) is a plan view showing a mask pattern formed on the insulating layer 2, (d) is FIG. 9 is a plan view showing the floating body 5 and the fixed electrodes 6 and 7 formed on the substrate by photolithographic etching, and FIG. 10E is a plan view in which connection electrodes 8a to 8c are further formed. (F) is a plan view from which the etching layer 3 has been removed, and corresponds to a reduced view of FIG. 1.

FIG. 3 is a cross-sectional view corresponding to the cross-sectional view taken along the line 3A-3A of FIG. 1, showing the shape of the raw material in the course of manufacturing, and showing how the cross-sectional shape changes sequentially from (a) to (f) of FIG. , (F)
FIG. 3 is a sectional view taken along line 3A-3A in FIG.

FIG. 4 shows 3A-3A in FIG. 1 of the conversion element of the second embodiment.
FIG. 5 is a cross-sectional view corresponding to a line cross-sectional view showing a material shape during manufacturing, showing a state where the cross-sectional shape is sequentially changed to (a) to (g) of FIG. 4, where (g) is a second embodiment. 3A in FIG.
It is sectional drawing corresponding to -3A line | wire cross section.

5A to 3C of the conversion element of the third embodiment; FIG.
FIG. 6 is a cross-sectional view showing a shape of a material in the process of manufacture, corresponding to a line cross-sectional view, showing a state in which the cross-sectional shape changes sequentially from FIG. 5A to FIG. 5G; 3A in FIG.
It is sectional drawing corresponding to -3A line | wire cross section.

FIG. 6 shows 3A-3A of FIG. 1 of the conversion element of the fourth embodiment.
FIG. 7 is a cross-sectional view corresponding to a line cross-sectional view, showing a shape of a material in the course of manufacturing, showing a state in which the cross-sectional shape changes sequentially from (a) to (g) in FIG. 6, where (g) is the fourth embodiment. 3A in FIG.
It is sectional drawing corresponding to -3A line | wire cross section.

FIG. 7 shows 3A-3A in FIG. 1 of the conversion element of the fifth embodiment.
It is sectional drawing which shows the raw material shape in the process of manufacture corresponding to a line sectional view, and shows a mode that a sectional shape changes sequentially from (a) to (g) of FIG. 7, (g) shows 5th Example. 3A in FIG.
It is sectional drawing corresponding to -3A line | wire cross section.

FIG. 8 is a plan view of a conversion element according to a seventh embodiment of the present invention.

9A is a sectional view taken along line 9A-9A in FIG. 8, FIG.
8A is a sectional view corresponding to the section taken along line 9A-9A in FIG. 8, FIG. 8C is a sectional view corresponding to the section taken along line 9A-9A in FIG. 8, and FIG. 9A-9 of FIG. 8 for an example
FIG. 10 is a sectional view corresponding to a section taken along line A, and FIG. 10E is a sectional view corresponding to a section taken along line 9A-9A in FIG. 8 of the eleventh embodiment.

[Explanation of symbols]

1: substrate 2: insulating layer 3: etching layer 4a to 4h: support section, etc. 5: floating body 6, 7, 16, 1
7: fixed electrode 5e, 5f: movable comb tooth 6b, 7b: fixed comb electrode 8a-8e: connection electrode 9, 9a, 9b: conductor 11: PSG film 12: resist pattern 13, 13a-13f: conductive body

Claims (19)

[Claims]
1. A substrate having an xy plane, a movable thin film supported on the substrate so as to vibrate in at least one of the x, y, and z directions and parallel to the xy plane of the substrate, and a movable thin film fixed to the substrate. A conversion element using a thin film, comprising: a fixed electrode having a surface facing a side surface of the thin film; and a movable side additional electrode joined to a side surface of the movable thin film.
2. The movable thin film has a base extending in the y direction and a plurality of movable comb teeth that are branched from the base and extend in the x direction and that are parallel to each other with a gap in the y direction; The movable-side additional electrode is joined to a side surface of the movable-side comb tooth; the fixed electrode includes a base extending in the y-direction and a plurality of fixed-side comb teeth branched from the base and extending in the x-direction and positioned in the gap. The conversion element according to claim 1, wherein the conversion element comprises a thin film.
3. A back conductor which is connected to a movable side additional electrode bonded to a side surface of the movable side comb teeth and is bonded to an xy back side of the movable side comb teeth on a back side of a surface facing a substrate. Item 3. A conversion element using a thin film according to Item 2.
4. The movable side additional electrode has a z of the movable thin film.
2. A z-direction width that is greater than the thickness in the direction.
The conversion element using a thin film according to claim 2 or 3.
5. The movable thin film is a semiconductor thin film; and the movable additional electrode is formed of Si, Ge, doped with conductive impurities.
3. A film according to claim 1, wherein the material is at least one of SixGe 1-x , SiC or SixGeyC 1-xy , or gold, platinum, V, Nb, Ta, W, Mo, molybdenum silicide or tungsten silicide. The conversion element using a thin film according to claim 3 or 4.
6. A step of forming an etching layer on a substrate, a step of forming a semiconductor thin film above the etching layer, and a step of forming a floating body having first comb teeth and a first comb by photolithographic etching. A semiconductor comprising a step of processing into a fixed body having second comb teeth arranged so as to mesh with the teeth, and a step of removing at least a part of the etching layer to make the floating body movable with respect to the substrate In a method for manufacturing a conversion element using a thin film, the semiconductor thin film is processed into a comb shape, and then a conductor is formed on at least opposing surfaces of the first and second comb teeth. Manufacturing method of the conversion element used.
7. A step of forming an etching layer on a substrate, a step of forming a semiconductor thin film above the etching layer, and forming the semiconductor thin film on a first surface having a surface substantially orthogonal to the substrate by photolithographic etching. Processing a floating body having an electrode and a fixed body having a second electrode arranged to form a parallel plate electrode in pairs with the first electrode, and removing at least a part of the etching layer Making the floating body movable with respect to the substrate by using the semiconductor thin film. After the photolithographic etching of the semiconductor thin film, at least on the opposing surfaces of the first and second electrodes A method for manufacturing a conversion element using a semiconductor thin film, comprising forming a conductor.
8. The semiconductor thin film according to claim 6, wherein a conductor is formed on at least opposing surfaces of the first and second electrodes by selectively growing the conductor on the semiconductor thin film. Manufacturing method of the conversion element.
9. The fabrication of a conversion element using a semiconductor thin film according to claim 8, wherein the conductor is Si, Ge or SixGe 1-x doped with the same conductivity as the electrode, or W or Mo. Method.
10. The method for manufacturing a conversion element using a semiconductor thin film according to claim 6, wherein said conductor is formed by electroplating.
11. A conductive thin film is isotropically formed on said semiconductor thin film, and said conductive thin film is left on at least opposing surfaces of said first and second electrodes by anisotropic etching. The method for manufacturing a conversion element using a semiconductor thin film according to claim 6 or 7, wherein the conductor is formed by removing the conductor.
12. The conductive thin film according to claim 1, wherein the conductive impurity is doped.
Pinged Si, Ge, SixGe 1-x , SiC or Six
GeyC 1-xy or gold, platinum, V, Nb, Ta,
The method for manufacturing a conversion element using a semiconductor thin film according to claim 11, wherein the conversion element is at least one of W, Mo, molybdenum silicide, and tungsten silicide.
13. A plasma CVD method for forming the conductive thin film.
12. The method for manufacturing a conversion element using a semiconductor thin film according to claim 11, wherein at least one of a method, a thermal CVD method, a sputtering method, and a plating method is used.
14. The method for manufacturing a conversion element using a semiconductor thin film according to claim 11, wherein the anisotropic etching is one of ion milling, ECR plasma etching, RIE and etching using another plasma.
15. The method according to claim 11, wherein a portion of the thin film formed below the semiconductor thin film is etched into at least the same shape as the semiconductor thin film in the electrode region before forming the conductive thin film.
A method for manufacturing a conversion element using the semiconductor thin film described in the above.
16. The etching of the thin film formed below the semiconductor thin film in the electrode region of the semiconductor thin film uses the same mask as the etching of the semiconductor thin film or the semiconductor thin film after the etching; A method for manufacturing a conversion element using a semiconductor thin film.
17. The method for manufacturing a conversion element using a semiconductor thin film according to claim 11, wherein a thin film having the same shape as the semiconductor thin film is formed at least above the electrode region of the semiconductor thin film before forming the conductive thin film.
18. A conversion element using a semiconductor thin film according to claim 17, wherein the mask for etching the semiconductor thin film is a mask for etching a thin film formed on an electrode region or the thin film after etching. Production method.
19. The method according to claim 17, wherein the thin film is made of the same material as the etching layer.
JP12198997A 1997-05-13 1997-05-13 Transducer using thin film and manufacture thereof Withdrawn JPH10313123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12198997A JPH10313123A (en) 1997-05-13 1997-05-13 Transducer using thin film and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12198997A JPH10313123A (en) 1997-05-13 1997-05-13 Transducer using thin film and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH10313123A true JPH10313123A (en) 1998-11-24

Family

ID=14824817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12198997A Withdrawn JPH10313123A (en) 1997-05-13 1997-05-13 Transducer using thin film and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH10313123A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003018868A (en) * 2001-07-02 2003-01-17 Fujitsu Ltd Electrostatic actuator and its manufacturing method
WO2003025958A3 (en) * 2001-09-17 2003-09-18 Infineon Technologies Ag Device for mechanically regulating an electrical capacitance, and method for making same
JP2005045976A (en) * 2003-07-25 2005-02-17 Matsushita Electric Works Ltd Electrostatic actuator
JP2006005731A (en) * 2004-06-18 2006-01-05 Seiko Epson Corp Micro mechanical electrostatic vibrator
JP2008164625A (en) * 2008-02-05 2008-07-17 Denso Corp Semiconductor dynamic quantity sensor
JP2008309718A (en) * 2007-06-15 2008-12-25 Toyota Motor Corp Mechanical quantity detection sensor, acceleration sensor, and yaw rate sensor as well as production method of mechanical quantity detection sensor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003018868A (en) * 2001-07-02 2003-01-17 Fujitsu Ltd Electrostatic actuator and its manufacturing method
JP4722333B2 (en) * 2001-07-02 2011-07-13 富士通株式会社 Electrostatic actuator and manufacturing method thereof
WO2003025958A3 (en) * 2001-09-17 2003-09-18 Infineon Technologies Ag Device for mechanically regulating an electrical capacitance, and method for making same
JP2005045976A (en) * 2003-07-25 2005-02-17 Matsushita Electric Works Ltd Electrostatic actuator
JP2006005731A (en) * 2004-06-18 2006-01-05 Seiko Epson Corp Micro mechanical electrostatic vibrator
JP4576898B2 (en) * 2004-06-18 2010-11-10 セイコーエプソン株式会社 Micromechanical electrostatic vibrator
JP2008309718A (en) * 2007-06-15 2008-12-25 Toyota Motor Corp Mechanical quantity detection sensor, acceleration sensor, and yaw rate sensor as well as production method of mechanical quantity detection sensor
JP2008164625A (en) * 2008-02-05 2008-07-17 Denso Corp Semiconductor dynamic quantity sensor

Similar Documents

Publication Publication Date Title
Ayazi et al. High aspect-ratio combined poly and single-crystal silicon (HARPSS) MEMS technology
Riethmuller et al. Thermally excited silicon microactuators
MacDonald SCREAM microelectromechanical systems
Shaw et al. SCREAM I: a single mask, single-crystal silicon, reactive ion etching process for microelectromechanical structures
US7418864B2 (en) Acceleration sensor and method for manufacturing the same
USRE42083E1 (en) Acceleration sensor and process for the production thereof
DE19906067B4 (en) Semiconductor Physical Size Sensor and Method of Making the Same
KR100501750B1 (en) Sensor and sensor manufacturing method
EP1057068B1 (en) Deflectable micro-mirror
US6257059B1 (en) Microfabricated tuning fork gyroscope and associated three-axis inertial measurement system to sense out-of-plane rotation
US6817725B2 (en) Micro mirror unit and method of making the same
US7685877B2 (en) Semiconductor mechanical sensor
US5349855A (en) Comb drive micromechanical tuning fork gyro
USRE42359E1 (en) Dynamical quantity sensor
US6531668B1 (en) High-speed MEMS switch with high-resonance-frequency beam
US7033515B2 (en) Method for manufacturing microstructure
US7007471B2 (en) Unilateral thermal buckle beam actuator
EP0371069B1 (en) Process for manufacturing microsensors with integrated signal processing
DE69838709T2 (en) Method for producing an accelerator
US6201284B1 (en) Multi-axis acceleration sensor and manufacturing method thereof
US5959208A (en) Acceleration sensor
US6531417B2 (en) Thermally driven micro-pump buried in a silicon substrate and method for fabricating the same
US3614678A (en) Electromechanical filters with integral piezoresistive output and methods of making same
KR100591392B1 (en) Capacitive dynamic quantity sensor, method for manufacturing capacitive dynamic quantity sensor, and detector including capacitive dynamic quantity sensor
JP4085854B2 (en) Manufacturing method of semiconductor dynamic quantity sensor

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040428

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20060901