JPH10228608A - Manufacture of alternate arrangement type multichannel magnetic head - Google Patents

Manufacture of alternate arrangement type multichannel magnetic head

Info

Publication number
JPH10228608A
JPH10228608A JP3166197A JP3166197A JPH10228608A JP H10228608 A JPH10228608 A JP H10228608A JP 3166197 A JP3166197 A JP 3166197A JP 3166197 A JP3166197 A JP 3166197A JP H10228608 A JPH10228608 A JP H10228608A
Authority
JP
Japan
Prior art keywords
magnetic head
recording
reproducing
film
head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3166197A
Other languages
Japanese (ja)
Inventor
Toru Takeura
亨 竹浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3166197A priority Critical patent/JPH10228608A/en
Publication of JPH10228608A publication Critical patent/JPH10228608A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To make a gap depth in zero line relation between a reproducing element and a recording element in the same substrate and between lots a prescribed value for the manufacture of the magnetic head arranged alternately with the reproducing element and the recording element. SOLUTION: This magnetic head is so constituted that a recording thin film magnetic head having a lower core 2, an upper core 10, a recording coil 5, a recording magnetic gap and an organic insulating films 4 and 6 for insulating the lower core, the upper core and the coil and a reproducing magneto- resistance effect head having a lower shield 12, an upper shield 20, a magneto- resistance effect element 7 and a reproducing magnetic gap for insulating the magneto-resistance effect element, the lower shield and the upper shield are alternately arranged. In this case, a position of a gap depth Gd=0 of the recording thin film magnetic head and a position of a height of the magneto-resistance effect element MRh=0 are formed in the same process under the same conditions by using the same mask.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、一般に磁気記録の
分野に関し、特に磁気媒体がデ−タの多重パラレル・チ
ャネルを有する記憶装置に用いられる磁気ヘッドに関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates generally to the field of magnetic recording, and more particularly to a magnetic head for use in a storage device having a magnetic medium having multiple parallel channels of data.

【0002】[0002]

【従来の技術】双方向に走行する磁気テ−プ記憶装置は
既によく知られている。このような、磁気テ−プ記憶装
置に採用される磁気ヘッドは、特開平4-358307号に記載
のように、磁性体基板に記録用素子と再生用磁気抵抗効
果素子を交互に配置し、磁性体ブロックを貼り合わせて
形成した磁気ヘッドが知られている。前記磁気ヘッド
は、高記録密度化が進むにつれ、今後、磁性体基板およ
び磁性体ブロックが、高透磁率の磁性薄膜に変わる方向
で検討されることが予想される。この場合、採用される
記録用薄膜素子構造は、特開昭59-79414号に記載のよう
な構造となり、記録用ヘッドのギャップ深さは、媒体浮
上面から記録用薄膜素子のギャップ長が広がる部分まで
となる。従って、記録用ヘッドのギャップ深さGd=0
位置(以下、Gd=0位置を記録用ヘッドのギャップ深
さゼロラインと記述とする。)は、媒体浮上面側の、コ
イルと上部磁性薄膜を絶縁するための絶縁膜の端面によ
って決定される。また、再生用磁気抵抗効果素子構造
は、特開昭50-59023号に記載のような磁気抵抗効果素子
を、再生用ギャップ長を決める絶縁膜を介してシールド
膜で挟む構造となっている。このような構造の再生用ヘ
ッドでは、媒体浮上面からの磁気抵抗効果素子の素子高
さMRhによって、再生特性が大きく左右される。(以
下、媒体浮上面からの磁気抵抗効果素子の素子高さMR
hを再生用ヘッドのギャップ深さと記述し、MRh=0
位置を再生用ヘッドのギャップ深さゼロラインと記述と
する。)
2. Description of the Related Art Bi-directionally traveling magnetic tape storage devices are already well known. As described in JP-A-4-358307, a magnetic head employed in such a magnetic tape storage device has recording elements and reproducing magnetoresistive elements alternately arranged on a magnetic substrate. 2. Description of the Related Art A magnetic head formed by bonding magnetic blocks is known. As the recording density of the magnetic head increases, it is expected that the magnetic substrate and the magnetic block will be considered to be replaced with magnetic thin films having high magnetic permeability in the future. In this case, the recording thin-film element structure adopted is a structure as described in JP-A-59-79414, and the gap depth of the recording head is such that the gap length of the recording thin-film element is increased from the medium floating surface. Up to the part. Therefore, the gap depth Gd = 0 of the recording head
The position (hereinafter, Gd = 0 position is described as a gap depth zero line of the recording head) is determined by the end face of the insulating film for insulating the coil from the upper magnetic thin film on the medium flying surface side. . The magnetoresistive element for reproduction has a structure in which a magnetoresistive element as described in Japanese Patent Application Laid-Open No. 50-59023 is sandwiched by a shield film via an insulating film that determines a gap length for reproduction. In the reproducing head having such a structure, the reproducing characteristics are largely influenced by the element height MRh of the magnetoresistive element from the air bearing surface. (Hereinafter, the element height MR of the magnetoresistive element from the air bearing surface of the medium)
h is described as the gap depth of the reproducing head, and MRh = 0
The position is described as a gap depth zero line of the reproducing head. )

【0003】[0003]

【発明が解決しようとする課題】記録用薄膜素子と再生
用磁気抵抗効果素子を、同一平面上に形成する場合に、
それぞれのギャップ深さゼロラインを決定する方法とし
て、従来の方法をそのまま採用すると次のような不具合
が発生する。第1の不具合は、同一基板内で前記した記
録用ヘッドのギャップ深さゼロラインと、前記した再生
用ヘッドのギャップ深さゼロラインの形成工程が異な
り、記録用ヘッドと再生用ヘッドのギャップ深さゼロラ
イン形成工程のマスクの合わせズレや、ギャップ深さゼ
ロラインを決める各パタ−ン形成時のパタ−ン伸縮等に
より、記録用ヘッドと再生用ヘッドのギャップ深さゼロ
ラインに数μmのばらつきが発生する。そして、このよ
うに同一面上に記録用薄膜素子と再生用磁気抵抗効果素
子が完成された基板を機械加工等により、ギャップ深さ
加工を行った場合、記録用ヘッドのギャップ深さを所定
の値としたときに、記録用ヘッドと再生用ヘッドのギャ
ップ深さゼロラインのばらつきにより再生用ヘッドのギ
ャップ深さが所定の値とならずばらつきを生じることに
なる。また、再生用ヘッドのギャップ深さを所定の値と
したときに、記録用ヘッドと再生用ヘッドのギャップ深
さゼロラインのばらつきにより、記録用ヘッドのギャッ
プ深さが所定の値とならずばらつきを生じることにな
る。さらに、第2の不具合は、各基板毎および各ロット
毎にも上記と同様の理由により、前記した記録用ヘッド
のギャップ深さゼロラインと、前記した再生用ヘッドの
ギャップ深さゼロラインにばらつきが発生する。そし
て、基板毎およびロット毎にばらつきを生じた、基板を
機械加工等により、ギャップ深さ加工を行った場合、記
録用ヘッドのギャップ深さを所定の値としたときに、記
録用ヘッドと再生用ヘッドのギャップ深さゼロラインの
ばらつきにより、再生用ヘッドのギャップ深さが所定の
値とならずばらつきを生じることになる。また、再生用
ヘッドのギャップ深さを所定の値としたときに、記録用
ヘッドと再生用ヘッドのギャップ深さゼロラインのばら
つきにより、記録用ヘッドのギャップ深さが所定の値と
ならずばらつきを生じることになる。上記2つの不具合
により、記録用ヘッドあるいは再生用ヘッドのギャップ
深さは、所定の値に対し大きく異なり、記録特性および
再生特性をばらつかせる原因となる。
When a recording thin film element and a reproducing magnetoresistive element are formed on the same plane,
If the conventional method is directly used as a method for determining each gap depth zero line, the following problem occurs. The first problem is that the step of forming the zero gap depth line of the recording head and the step of forming the zero gap depth line of the reproducing head in the same substrate are different, and the gap depth between the recording head and the reproducing head is different. Due to the misalignment of the mask in the zero line forming step and the pattern expansion / contraction during the formation of each pattern for determining the zero gap depth line, the gap depth between the recording head and the reproducing head is several μm. Variations occur. When the substrate on which the recording thin-film element and the reproducing magnetoresistive element are completed on the same surface is subjected to gap depth processing by machining or the like, the gap depth of the recording head is set to a predetermined value. When the value is set to a value, the gap depth of the reproducing head does not reach a predetermined value due to the variation of the zero line of the gap depth between the recording head and the reproducing head, and the variation occurs. Further, when the gap depth of the reproducing head is set to a predetermined value, the gap depth of the recording head does not reach the predetermined value due to the variation of the gap depth zero line between the recording head and the reproducing head. Will occur. Further, the second problem is that, for each substrate and each lot, for the same reason as described above, the gap depth zero line of the recording head and the gap depth zero line of the reproducing head vary. Occurs. Then, when gap depth processing is performed by mechanical processing or the like on the substrate, which has varied between substrates and lots, when the gap depth of the recording head is set to a predetermined value, the recording head Due to the variation of the zero line of the gap depth of the reproducing head, the gap depth of the reproducing head does not become a predetermined value and varies. Further, when the gap depth of the reproducing head is set to a predetermined value, the gap depth of the recording head does not reach the predetermined value due to the variation of the gap depth zero line between the recording head and the reproducing head. Will occur. Due to the above two problems, the gap depth of the recording head or the reproducing head greatly differs from a predetermined value, which causes variation in recording characteristics and reproducing characteristics.

【0004】[0004]

【課題を解決するための手段】記録用ヘッドと再生用ヘ
ッドのギャップ深さゼロラインを、同一工程により形成
する製造方法を採用することにより、上記課題を解決す
ることができる。具体的方法としては、再生用ヘッドの
ギャップ深さゼロラインと記録用ヘッドのギャップ深さ
ゼロラインを決定する絶縁膜形成工程を、同条件および
同一マスクを用いて形成する製造方法とすることであ
る。このことにより、素子形成時に決定される記録用ヘ
ッドと再生用ヘッドのギャップ深さゼロラインの関係
を、所定値に対して数十nmから数百nmの範囲で高精
度に形成することが可能となり、素子形成時の基板内お
よびロット毎による記録用ヘッドと再生用ヘッドのギャ
ップ深さゼロラインのズレ量を低減できる。
The above object can be attained by employing a manufacturing method in which a gap depth zero line between a recording head and a reproducing head is formed in the same step. As a specific method, an insulating film forming step of determining a zero gap depth line of the reproducing head and a zero gap depth line of the recording head is performed by using a manufacturing method in which the insulating film is formed using the same conditions and the same mask. is there. This makes it possible to form the relationship between the gap depth zero line between the recording head and the reproducing head, which is determined at the time of element formation, within a range of several tens to several hundreds of nm with respect to a predetermined value with high accuracy. Thus, it is possible to reduce the deviation of the gap depth zero line between the recording head and the reproducing head in the substrate and for each lot during element formation.

【0005】[0005]

【発明の実施の形態】本発明による完成後の交互配置型
磁気ヘッドの平面図を図1に示す。図2から図7に本発
明の製造途中の平面図と断面図を示す。
FIG. 1 is a plan view of a completed interleaved magnetic head according to the present invention. 2 to 7 show a plan view and a cross-sectional view of the present invention in the course of manufacturing.

【0006】図3は図2中のA−A及びB−Bの断面図
である。図3に示す基板1上に磁性体(パ−マロイ等)
を、スパッタあるいはメッキ等により数μmの厚さで全
面に成膜する。その後、図2に示すように、再生用素子
部の磁気シ−ルドとして下部シ−ルド12の形状にま
た、記録素子部の磁気コアとして下部コア2の形状とな
るように、ホトリソグラフィ技術あるいはイオンミリン
グ等により形成する。この上に図3に示すような、再生
用および記録用の第1ギャップ3を形成するため、アル
ミナあるいは酸化シリコン等を、スパッタリング法によ
り数百nmの厚さで全面に形成する。次に、再生用の引
出し導体15を、下部シ−ルド12と絶縁するためおよ
び、記録用のコイル5を、下部コア2と絶縁するために
有機絶縁膜4を図2に示すような形状に、ホトリソグラ
フィ技術を用いて厚さ数百nm形成する。この上に電気
良導体(金あるいは銅等)を、スパッタあるいはメッキ
等により数μmの厚さで全面に成膜したのち、図2に示
すように再生用素子部は、引出し導体15のような形状
とし、記録用素子部は、コイル5のような形状となるよ
うに、ホトリソグラフィ技術あるいはイオンミリング等
により形成する。そして次に、再生用の引出し導体15
と、記録用のコイル5を、上部シ−ルド20あるいは上
部コア10と絶縁し、さらに、再生用素子のギャップ深
さゼロラインと記録用素子のギャップ深さゼロラインを
決定するための、有機絶縁膜6をスピンコ−ト等の方法
により全面に数μmから十数μmの厚さにコ−トし、ホ
トリソグラフィ技術により同一マスクを用いて図2に示
すような形状に形成する。図2中では、再生素子と記録
素子のギャップ深さゼロラインを同じとして形成してあ
るが、記録再生特性を確保するために、再生用素子と記
録用素子のギャップ深さゼロラインを、あらかじめシフ
トさせる必要がある場合には、その量を考慮した形状の
マスクを用いて形成する。次に、再生用素子部のみに、
磁気抵抗効果を有するパ−マロイ等を数十nmと、これ
に、バイアスを印加するためのバイアス膜を、数十nm
から数百nmの厚さで全面に成膜したのち、図2に示す
ような形状の、磁気抵抗効果素子7に形成する。さら
に、図2および図3に示すように、再生用素子部のみの
有機絶縁膜6を除去し、記録用素子部のみの有機絶縁膜
6を残すための、保護膜8(アルミナまたは酸化シリコ
ン等の絶縁膜あるいはチタン、ニオブ、モリブデンまた
はクロム等の高抵抗膜)をスパッタ等により数nmから
数十nmの厚さで全面に成膜したのち、図2に示すよう
な形状に、ホトリソグラフィ技術と、イオンミリング技
術あるいはスパッタエッチング技術を用いて形成する。
FIG. 3 is a sectional view taken along lines AA and BB in FIG. A magnetic material (permalloy, etc.) is placed on the substrate 1 shown in FIG.
Is formed on the entire surface to a thickness of several μm by sputtering or plating. Thereafter, as shown in FIG. 2, a photolithographic technique or a photolithography technique is used so that the magnetic shield of the reproducing element has the shape of the lower shield 12 and the magnetic core of the recording element has the shape of the lower core 2. It is formed by ion milling or the like. In order to form a first gap 3 for reproduction and recording as shown in FIG. 3, alumina, silicon oxide, or the like is formed over the entire surface by sputtering to a thickness of several hundred nm. Next, in order to insulate the lead-out conductor 15 for reproduction from the lower shield 12 and to insulate the recording coil 5 from the lower core 2, the organic insulating film 4 is formed into a shape as shown in FIG. Is formed to a thickness of several hundred nm using a photolithography technique. After a good electric conductor (gold or copper, etc.) is formed on the entire surface with a thickness of several μm by sputtering or plating or the like, the reproducing element portion has a shape similar to the lead conductor 15 as shown in FIG. The recording element portion is formed by a photolithography technique or ion milling so as to have a shape like the coil 5. Next, the lead conductor 15 for reproduction is used.
And an insulating layer for isolating the recording coil 5 from the upper shield 20 or the upper core 10 and determining the gap depth zero line of the reproducing element and the gap depth zero line of the recording element. The insulating film 6 is coated on the entire surface to a thickness of several μm to several tens μm by a method such as spin coating, and is formed into a shape as shown in FIG. In FIG. 2, the zero gap depth line between the reproducing element and the recording element is formed as the same. However, in order to secure the recording / reproducing characteristics, the zero gap depth line between the reproducing element and the recording element is set in advance. In the case where it is necessary to shift, a mask having a shape in consideration of the amount is used. Next, only in the reproducing element part,
Permalloy or the like having a magnetoresistance effect is several tens of nm, and a bias film for applying a bias thereto is several tens of nm.
After forming a film over the entire surface to a thickness of several hundred nm, the magnetoresistive element 7 having a shape as shown in FIG. 2 is formed. Further, as shown in FIGS. 2 and 3, a protective film 8 (alumina or silicon oxide or the like) for removing the organic insulating film 6 only in the reproducing element portion and leaving the organic insulating film 6 only in the recording element portion. An insulating film or a high-resistance film such as titanium, niobium, molybdenum or chromium) is formed on the entire surface by sputtering or the like to a thickness of several nm to several tens of nm, and then a photolithographic technique is formed into a shape as shown in FIG. And an ion milling technique or a sputter etching technique.

【0007】この工程において、先に形成した磁気抵抗
効果素子7に、ダメ−ジを与えないようにする必要があ
る。そのための方法としては、例えば、ホトリソグラフ
ィ技術を利用したリフトオフ法や、イオンミリング技術
あるいはスパッタエッチング技術を利用する方法があ
る。イオンミリング技術あるいはスパッタエッチング技
術を利用する場合には、反応性ガスを用いた反応性エッ
チング法を採用することが有効手段である。上記の方法
により、保護膜8を記録用素子部のみに形成したのち、
再生用素子部のみの有機絶縁膜6を、溶剤あるいは除去
液等により溶かすことにより、数μmから十数μmの有
機絶縁膜6上に形成されている、数十nmから数百nm
の磁気抵抗効果素子7も有機絶縁膜6と同時に除去され
る。
In this step, it is necessary to prevent damage to the magnetoresistance effect element 7 formed earlier. As a method therefor, for example, there is a lift-off method using a photolithography technique, a method using an ion milling technique or a sputter etching technique. When using an ion milling technique or a sputter etching technique, it is effective means to employ a reactive etching method using a reactive gas. After forming the protective film 8 only on the recording element portion by the above method,
By dissolving the organic insulating film 6 of only the reproducing element portion with a solvent, a removing solution, or the like, several tens nm to several hundreds nm formed on the organic insulating film 6 of several μm to several tens μm.
Is removed at the same time as the organic insulating film 6.

【0008】次に、図3に示す有機絶縁膜6上の磁気抵
抗効果素子7を、確実に精度よく除去するための有効な
手段として、次のような方法が考えられる。第1案は、
保護膜8まで形成された基板を、有機絶縁膜6を溶かす
溶剤あるいは除去液等のはいった超音波層に入れて、物
理的な力を加えながら有機絶縁膜6を溶かす方法であ
る。第2案は、保護膜8まで形成された基板を回転させ
ながら、その上から、有機絶縁膜6を溶かすための、溶
剤あるいは除去液等を噴射させながら、有機絶縁膜6を
溶かす方法である。上記のようにして有機絶縁膜6と有
機絶縁膜6上の磁気抵抗効果素子7とを同時に除去した
図を図4と図5に示す。図5は図4中のA−A及びB−
Bの断面図である。
Next, as an effective means for reliably and accurately removing the magnetoresistive element 7 on the organic insulating film 6 shown in FIG. 3, the following method can be considered. The first plan is
In this method, the substrate formed up to the protective film 8 is put into an ultrasonic layer containing a solvent or a removing solution for dissolving the organic insulating film 6, and the organic insulating film 6 is dissolved while applying physical force. The second plan is a method of dissolving the organic insulating film 6 while rotating the substrate on which the protective film 8 is formed and spraying a solvent or a removing liquid or the like for dissolving the organic insulating film 6 thereon. . FIGS. 4 and 5 show the organic insulating film 6 and the magnetoresistive element 7 on the organic insulating film 6 removed at the same time as described above. FIG. 5 shows AA and B- in FIG.
It is sectional drawing of B.

【0009】次に、再生および記録の第2ギャップ9を
形成するため、図7に示すように、アルミナあるいは酸
化シリコン等を、スパッタリング法により全面に数百n
m形成する。そして、再生用素子の下部シ−ルド12
と、上部シ−ルド20を接続するためのバックギャップ
21と、記録用素子の下部コア2と、上部コア10を接
続するためのバックギャップ11を形成するために、ホ
トリソグラフィ技術とイオンミリング技術を用いて、第
2ギャップ9と有機絶縁膜4と第1ギャップ3を、同時
にエッチングする。この上に、磁性体(パ−マロイ等)
をスパッタあるいはメッキ等により全面に数μm成膜し
たのち、図6に示すような形状とするため、ホトリソグ
ラフィ技術あるいはイオンミリング等により、再生用素
子の上部シ−ルド20と、記録用素子の上部コア10を
形成する。図7は図6中のA−A及びB−Bの断面図で
ある。
Next, in order to form a second gap 9 for reproduction and recording, as shown in FIG.
m. And the lower shield 12 of the reproducing element.
, A back gap 21 for connecting the upper shield 20, a back gap 11 for connecting the lower core 2 of the recording element and the upper core 10, and a photolithography technique and an ion milling technique. Is used to simultaneously etch the second gap 9, the organic insulating film 4, and the first gap 3. On top of this, a magnetic material (permalloy, etc.)
After forming a film having a thickness of several μm over the entire surface by sputtering or plating, the upper shield 20 of the reproducing element and the recording element are formed by photolithography or ion milling in order to obtain the shape shown in FIG. The upper core 10 is formed. FIG. 7 is a sectional view of AA and BB in FIG.

【0010】最後に、図には示さないが、この上に再生
用素子と記録用素子を保護するための、アルミナ膜を数
十μm厚付けし、再生用素子および記録用素子の段差を
なくすため、基板状態で、保護アルミナ膜の表面をラッ
ピングして、交互配置型磁気ヘッド用基板を完成させ
る。
Finally, although not shown in the figure, an alumina film for protecting the reproducing element and the recording element is provided with a thickness of several tens of μm thereon to eliminate a step between the reproducing element and the recording element. Therefore, in the substrate state, the surface of the protective alumina film is wrapped to complete an alternately arranged magnetic head substrate.

【0011】上記のようにして、完成した基板を機械加
工により切断し、保護ブロック30を貼りつけたのち、
媒体浮上面を研削およびラップして、ギャップ深さ加工
を行い図8に示すような交互配置型磁気ヘッドを完成さ
せる。
As described above, the completed substrate is cut by machining, and after attaching the protection block 30,
The medium air bearing surface is ground and lapped to perform gap depth processing to complete an interleaved magnetic head as shown in FIG.

【0012】[0012]

【発明の効果】上記のような製造方法を用いることによ
り、再生用素子と記録用素子のギャップ深さゼロライン
を、同時に形成することが可能となる。これにより、再
生用ヘッドと記録用ヘッドのギャップ深さを、同一もし
くは所定のシフト量を持たせ、設計通りのギャップ深さ
に、精度よく形成することができる。従って、再生用ヘ
ッドと記録用ヘッドの、ギャップ深さの影響が少なく、
再生特性および記録特性が安定した、交互配置型磁気ヘ
ッドを提供することができる。
By using the above-described manufacturing method, it is possible to simultaneously form a zero gap depth line between the reproducing element and the recording element. As a result, the gap depth between the reproducing head and the recording head can be set to the same or a predetermined shift amount, and the gap depth can be precisely formed as designed. Therefore, the influence of the gap depth between the reproducing head and the recording head is small,
An alternately arranged magnetic head having stable reproduction and recording characteristics can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】交互配置型磁気ヘッド素子の平面図FIG. 1 is a plan view of an alternating magnetic head element.

【図2】製造工程途中1の再生素子と記録素子の平面図FIG. 2 is a plan view of a reproducing element and a recording element during a manufacturing process 1;

【図3】製造工程途中1の再生素子と記録素子の断面図FIG. 3 is a cross-sectional view of a reproducing element and a recording element during a manufacturing process 1;

【図4】製造工程途中2の再生素子と記録素子の平面図FIG. 4 is a plan view of a reproducing element and a recording element during a manufacturing process 2;

【図5】製造工程途中2の再生素子と記録素子の断面図FIG. 5 is a cross-sectional view of a reproducing element and a recording element during a manufacturing process 2;

【図6】製造工程途中3の再生素子と記録素子の平面図FIG. 6 is a plan view of a reproducing element and a recording element during a manufacturing process 3;

【図7】製造工程途中3の再生素子と記録素子の断面図FIG. 7 is a cross-sectional view of a reproducing element and a recording element during a manufacturing process 3;

【図8】交互配置型磁気ヘッドの斜視図FIG. 8 is a perspective view of an alternate arrangement type magnetic head.

【符号の説明】[Explanation of symbols]

1…基板,2…下部コア,3…第1ギャップ,4,6…
有機絶縁膜,5…コイル,7…磁気抵抗効果素子,8…
保護膜,9…第2ギャップ,10…上部コア、11…
記録用バックギャップ,12…下部シ−ルド,15…引
出し導体、20…上部シ−ルド,21…再生用バックギ
ャップ,30…保護ブロック
DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Lower core, 3 ... 1st gap, 4, 6 ...
Organic insulating film, 5 ... Coil, 7 ... Magnetoresistance effect element, 8 ...
Protective film, 9 second gap, 10 upper core, 11
Back gap for recording, 12 lower shield, 15 lead conductor, 20 upper shield, 21 back gap for reproduction, 30 protection block

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】下部コアと上部コアと記録用コイルと記録
用磁気ギャップと、該下部コアおよび該上部コアと該コ
イルを絶縁するための、有機絶縁膜を有する記録用薄膜
磁気ヘッドと、下部シ−ルドと上部シ−ルドと磁気抵抗
効果素子と、該磁気抵抗効果素子と該下部シ−ルドおよ
び該上部シ−ルドを絶縁するための、再生用磁気ギャッ
プを有する再生用磁気抵抗効果ヘッドを、交互に配置し
た磁気ヘッドにおいて、記録用薄膜磁気ヘッドのギャッ
プ深さGd=0位置と、再生用磁気抵抗効果ヘッドの磁
気抵抗効果素子高さMRh=0位置を、同一工程で形成
することを特徴とする交互配置型多チャンネル磁気ヘッ
ドの製造方法。
1. A recording thin-film magnetic head having an organic insulating film for insulating the lower core, the upper core, the recording coil, the recording magnetic gap, the lower core, the upper core, and the coil, A reproducing magnetoresistive head having a reproducing magnetic gap for insulating the shield, upper shield, and magnetoresistive element, and insulating the magnetoresistive element from the lower shield and the upper shield. In the magnetic heads arranged alternately, the position of the gap depth Gd = 0 of the recording thin film magnetic head and the position of the magnetoresistive element height MRh = 0 of the reproducing magnetoresistive head are formed in the same step. A method for manufacturing an alternately arranged multi-channel magnetic head, characterized by the following.
【請求項2】上記請求項1に記載の磁気ヘッドの製造方
法において、記録用薄膜磁気ヘッドのギャップ深さGd
=0位置と、再生用磁気抵抗効果ヘッドの磁気抵抗効果
素子高さMRh=0位置を形成する手段として、記録用
薄膜磁気ヘッドの上部コアと該コイルを絶縁するため
の、有機絶縁膜を用いたことを特徴とする交互配置型多
チャンネル磁気ヘッドの製造方法。
2. The method of manufacturing a magnetic head according to claim 1, wherein the gap depth Gd of the recording thin-film magnetic head is adjusted.
= 0 position and the MRh = 0 position of the magnetoresistive element of the magnetoresistive head for reproduction use an organic insulating film for insulating the upper core of the thin-film magnetic head for recording from the coil. A method for manufacturing an alternating arrangement type multi-channel magnetic head.
【請求項3】上記請求項2に記載の磁気ヘッドの製造方
法において、該記録用薄膜磁気ヘッドの該有機絶縁膜
を、記録用薄膜素子部と再生用磁気抵抗効果素子部に同
時条件及び同時マスクを用いて形成し、記録用薄膜素子
部は該有機絶縁膜を残し、記録用薄膜磁気ヘッドのギャ
ップ深さGd=0位置を決定し、再生用磁気抵抗効果素
子部は該有機絶縁膜を除去することにより、再生用磁気
抵抗効果ヘッドの磁気抵抗効果素子高さMRh=0位置
を決定したことを特徴とする交互配置型多チャンネル磁
気ヘッドの製造方法。
3. The method of manufacturing a magnetic head according to claim 2, wherein said organic insulating film of said recording thin-film magnetic head is simultaneously formed on said recording thin-film element portion and said reproducing magneto-resistance effect element portion under the same conditions and simultaneously. It is formed using a mask, the thin film element for recording leaves the organic insulating film, determines the position of the gap depth Gd = 0 of the thin film magnetic head for recording, and the magnetoresistive element for reproducing reads the organic insulating film. A method for manufacturing an interleaved multi-channel magnetic head, wherein the position of the magnetoresistive element height MRh = 0 of the reproducing magnetoresistive head is determined by removing the magnetic head.
【請求項4】上記請求項2に記載の磁気ヘッドの製造方
法において、記録用薄膜磁気ヘッドのギャップ深さGd
=0位置と、再生用磁気抵抗効果ヘッドの磁気抵抗効果
素子高さMRh=0位置の決定に用いる、該記録用薄膜
磁気ヘッドの該有機絶縁膜を保護するための、保護膜を
形成する工程を採用したことを特徴とする交互配置型多
チャンネル磁気ヘッドの製造方法。
4. The method of manufacturing a magnetic head according to claim 2, wherein the gap depth Gd of the recording thin-film magnetic head is set.
Forming a protective film for protecting the organic insulating film of the recording thin-film magnetic head, which is used for determining the position of the magnetoresistive element of the reproducing magnetoresistive head and the height MRh of the magnetoresistive element of the reproducing magnetoresistive head. A method for manufacturing an alternately arranged multi-channel magnetic head, comprising:
【請求項5】上記請求項4に記載の磁気ヘッドの製造方
法において、該有機絶縁膜を保護するための保護膜材と
して、無機質の絶縁膜を採用したことを特徴とする交互
配置型多チャンネル磁気ヘッドの製造方法。
5. The method of manufacturing a magnetic head according to claim 4, wherein an inorganic insulating film is employed as a protective film material for protecting the organic insulating film. A method for manufacturing a magnetic head.
【請求項6】上記請求項4に記載の磁気ヘッドの製造方
法において、該有機絶縁膜を保護するための保護膜材と
して、高抵抗の導電膜を採用したことを特徴とする交互
配置型多チャンネル磁気ヘッドの製造方法。
6. A method for manufacturing a magnetic head according to claim 4, wherein a high-resistance conductive film is used as a protective film material for protecting said organic insulating film. A method for manufacturing a channel magnetic head.
JP3166197A 1997-02-17 1997-02-17 Manufacture of alternate arrangement type multichannel magnetic head Pending JPH10228608A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3166197A JPH10228608A (en) 1997-02-17 1997-02-17 Manufacture of alternate arrangement type multichannel magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3166197A JPH10228608A (en) 1997-02-17 1997-02-17 Manufacture of alternate arrangement type multichannel magnetic head

Publications (1)

Publication Number Publication Date
JPH10228608A true JPH10228608A (en) 1998-08-25

Family

ID=12337337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3166197A Pending JPH10228608A (en) 1997-02-17 1997-02-17 Manufacture of alternate arrangement type multichannel magnetic head

Country Status (1)

Country Link
JP (1) JPH10228608A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7692893B2 (en) 2004-06-30 2010-04-06 Hitachi Global Storage Technologies Netherlands, B.V. Side-by-side magnetic head configuration with flared pole tip layer and read sensor sharing same plane

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7692893B2 (en) 2004-06-30 2010-04-06 Hitachi Global Storage Technologies Netherlands, B.V. Side-by-side magnetic head configuration with flared pole tip layer and read sensor sharing same plane

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