JPH10204641A - Diamondlike carbon thin film depositing device - Google Patents

Diamondlike carbon thin film depositing device

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Publication number
JPH10204641A
JPH10204641A JP868397A JP868397A JPH10204641A JP H10204641 A JPH10204641 A JP H10204641A JP 868397 A JP868397 A JP 868397A JP 868397 A JP868397 A JP 868397A JP H10204641 A JPH10204641 A JP H10204641A
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JP
Japan
Prior art keywords
electrode
housing
generation region
plasma generation
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP868397A
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Japanese (ja)
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JP3022794B2 (en
Inventor
Yuichi Sakamoto
雄一 坂本
Original Assignee
Nichimen Denshi Koken Kk
ニチメン電子工研株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichimen Denshi Koken Kk, ニチメン電子工研株式会社 filed Critical Nichimen Denshi Koken Kk
Priority to JP9008683A priority Critical patent/JP3022794B2/en
Publication of JPH10204641A publication Critical patent/JPH10204641A/en
Application granted granted Critical
Publication of JP3022794B2 publication Critical patent/JP3022794B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

(57) [Problem] To provide a diamond-like carbon thin film deposition apparatus capable of efficiently forming a film without requiring a relatively large voltage. An object to be processed is supported in a housing.
A substrate holder 6 having a second electrode 6a and a first electrode 2 arranged so as to face the second electrode are provided, and a plasma generation region is defined between these electrodes. The first electrode has a plurality of electrode forming members 10 each having a vertical cylindrical portion 10b and a horizontal plate portion 10a for increasing the surface area, which are detachably provided on the housing and provided along the inner surface of the first electrode.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a cutting tool, a mold,
By depositing a diamond-like carbon thin film on the surface of the object to be processed, such as a magnetic recording medium, to form a hard, low coefficient of friction, chemically stable surface and extend the life of the object to be processed,
The present invention relates to a diamond-like carbon thin film deposition apparatus for improving tribological properties.

[0002]

2. Description of the Related Art Hardening and stabilization of the surface of an object to be processed as described above have been conventionally performed by techniques such as quenching, nitriding, or ion implantation of steel. However, these conventional techniques are not suitable for low melting point materials and brittle structural materials. For this reason, recently, a technique of depositing an amorphous carbon thin film (diamond-like carbon) on the surface of an object to be processed using plasma has been used in various fields.

[0003]

However, in this technique, in order to deposit a thin film efficiently, the voltage applied between the electrodes must be relatively large. Accordingly, an object of the present invention is to provide a diamond-like carbon thin film deposition apparatus capable of efficiently forming a film without requiring a relatively large voltage.

[0004]

A first aspect of the present invention.
The diamond-like carbon thin film deposition apparatus described in the above, a housing having a first electrode that defines a plasma generation region therein, and a first electrode provided in the housing, supporting an object to be processed, and facing a first electrode facing the first electrode. Support means having two electrodes, means for supplying a hydrocarbon gas into the housing, means for applying a voltage between the first electrode and the second electrode,
Microwave supply means for supplying microwaves to a plasma generation region to generate plasma of hydrocarbons supplied in the housing to form a diamond-like carbon thin film on the object to be processed; A plurality of irregularities are formed on the inner surface defining the plasma generation region of the electrode so as to increase the surface area thereof.

According to a third aspect of the present invention, there is provided a diamond-like carbon thin film deposition apparatus, comprising: a housing; And a supporting means provided below the plasma generation region and supporting the object to be processed thereon and having a second electrode facing the first electrode, and supplying a hydrocarbon gas to the plasma generation region. Means and the first
Means for applying a voltage between the first electrode and the second electrode, and supplying microwaves provided above the plasma generation region to generate hydrocarbon plasma supplied into the housing, and A microwave supply member for forming a diamond-like carbon thin film on the body, and a plurality of irregularities are formed on an inner surface of the first electrode that defines a plasma generation region so as to increase a surface area of the first electrode. It is characterized by the following.

[0006]

When a high-frequency voltage V is applied between the first electrode and the second electrode in order to deposit a hard diamond thin film, " The static voltages V S1 and V S2 are applied, and a hard film is obtained due to the collision effect of ions accelerated at the voltage V S2 . At this time, assuming that the area of the first electrode is S 1 and the area of the second electrode is S 2 , the relationship of V S2 / V S1 = (S 1 / S 2 ) 2 V S1 + V S2 = | V | Therefore, if a plurality of irregularities are formed on the inner surface defining the plasma generation region of the first electrode so as to increase the surface area thereof as in the present invention, the area of S 1 becomes S 1
2 , higher V S2 can be obtained with a relatively low high-frequency voltage. For example, comparing S 1 / S 2 = 2 and 10 with V = 300 volts,
S2 becomes 240 volts and 297 volts, and an electrostatic voltage can be effectively applied to the second electrode.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A diamond-like carbon thin film deposition apparatus according to one embodiment of the present invention will be described below with reference to the accompanying drawings. In FIG. 1, reference numeral 1 denotes a vertically extending cylindrical or rectangular housing formed of metal and has a first electrode 2 defining a plasma generation region therein. The first electrode 2 is arranged along the inner peripheral surface of the housing,
It has a cylindrical shape with a rectangular cross section extending in the vertical direction, and has an upper end and a lower end opened. This cylindrical shape is not limited to a rectangular cross-section, and may be any shape such as a circle, for example, but is desirably the same as the shape of the object on which the diamond-like carbon thin film is formed. A rectangular plate 3 made of a dielectric material such as ceramic is provided as a microwave supply member above the plasma generation region.
The dielectric rectangular plate 3 is attached to the upper surface of the housing 1 so as to cover almost the entire microwave generation region. The other end of the waveguide 4 whose one end is connected to a high-frequency power supply (not shown) is attached to the center of the upper wall of the housing 1. That is, a circular or rectangular through hole is formed at the center of the upper wall, and the outer peripheral surface of the other end of the outer conductor 4a of the waveguide 4 is attached to the inner peripheral surface. At the center of the rectangular plate 3 of the microwave dielectric, a through hole having a diameter smaller than that of the through hole in the upper wall is formed. The other end of the center conductor 4 b of the tube 4 penetrates and is attached to the center of the rectangular plate 3.
As a result, the microwave oscillated from the high frequency source is supplied to the plasma generation region in the housing 1 via the waveguide 4 and the rectangular plate 3. At the other end of the waveguide 4, a vacuum sealing window 4c is provided between the outer conductor 4a and the inner conductor 4b.
Are formed.

A substrate holder as a supporting member is provided below the plasma generation region to support a substrate 5 as an object to be processed such that the upper surface thereof faces the rectangular plate 3 with the plasma generation region interposed therebetween. 6 are provided. The substrate holder 6 has a second electrode 6 a extending horizontally so as to face the first electrode 2. This electrode 6
It is preferable that a has substantially the same dimension as the substrate 5, and if necessary, a temperature control means for keeping the electrode at a predetermined temperature, for example, a normal temperature, is provided.
The control unit is driven when the energy incident flux from the generated plasma is high and the substrate 5 is heated during the film formation. In this preferred example, the control means comprises:
A water cooling jacket formed in the second electrode 6a and through which cooling water is circulated. Also, this electrode 6a
Is electrically connected to a high-frequency oscillator (not shown) provided outside the housing 1 via a matching device and a blocking capacitor. This high-frequency transmitter is also electrically connected to the first electrode 2,
The first electrode 2 itself is grounded. As a result, 350
Using a high-frequency power source of about V, a predetermined negative bias voltage, preferably 250 V to 350 V, is applied to the second electrode 6 a.
A negative bias of V may be applied.

The first electrode 2 includes a plurality of electrode forming members 10. Each electrode forming member 10 is formed of metal, for example, aluminum, and has a horizontal plate portion 10a.
And a vertical or plate-shaped portion 10b. The horizontal plate portion 10a extends from the upper end of the vertical cylindrical portion 10b toward the plasma generation region.
That is, it extends horizontally inside the housing 1. The length of the horizontal plate portion 10a is equal to the length of the vertical portion 10b.
It is set to 5 to 1.5 times, which is almost the same in this example. This is because if the horizontal plate portion is too short, the effect of increasing the surface area of the electrode, which will be described in detail later, is small, and if the horizontal plate portion is too long, the function of the vertical cylinder portion 10b as an electrode is impaired.

Through holes are formed substantially at the center of the horizontal plate portion 10a, and bolts 11 extending vertically from the upper wall of the housing 1 pass through these through holes.
Then, the electric and heat insulating spacers 12 are attached to the adjacent electrode forming members 1 so that the bolts 11 are inserted therethrough.
It is arranged between 0. These spacers 12 have a length such that adjacent electrode forming members 10a are slightly apart from each other, that is, a gap is formed between the upper vertical cylindrical portion 10b and the lower vertical cylindrical portion 10b. The length is set slightly longer than the vertical tube portion 10b. Then, the lowermost and uppermost electrode forming members 10 are respectively fastened so as to be fastened.
3 are screwed into the lower part and the upper part of the bolt 11, respectively. In the first electrode 2 thus configured, the nut 1
By removing the bolt 3 from the bolt 11, the electrode forming member 10
Can be removed from the housing 1 for replacement and maintenance. In order to put the electrode forming member 10 in and out of the housing 1 in this manner, the housing 1 has, for example, an upper wall that is rotatable or removable with respect to a peripheral wall.
In the first electrode 2 having such a configuration, the substantial surface of the electrode is the total area of the inner surface of the vertical tube portions 10b of all the electrode forming members 10 and the lower surface of the horizontal plate portion 10a. . As a result, for example, the vertical tube portion 10b and the horizontal plate portion 1
When 0a is formed to have the same length, the area of the first electrode 2 is about double as compared with the case where the horizontal plate portion 10a is not formed. Therefore, the second electrode 6a
May be 1 /.

Each of the electrode forming members 10 is provided with a heating means 14, and each independently has a temperature of 300 ° C. to 50 ° C.
The dielectric rectangular plate is heated to a predetermined temperature of 0 ° C., and similarly, a predetermined temperature of 300 ° C. to 500 ° C. That is, although not shown, a plurality of temperature sensors are provided near the dielectric rectangular plate in the plasma generation region, and the temperature distribution in the plane direction of the rectangular plate is constantly measured during film formation, and the average is measured. As a result, the dielectric rectangular plate can be maintained at the predetermined temperature.

In this embodiment, the heating means 14
Is constituted by insulated heating wires wound around the outer surface of the electrode forming member 10, respectively. However, other forms of heating means, for example, a metal tube is wound around the outer surface of the electrode forming member 10, A so-called high-temperature chiller that controls the temperature of each electrode forming member by flowing a controlled fluid may be used, or an infrared lamp that irradiates the outer surface of the vertical plate 10a with infrared light and heats it. Further, the rectangular plate 3 may be directly heated by a heater or the like.

In the housing 1, annular first and second annular members connected respectively to the other end of a conduit having one end connected to a hydrocarbon gas source provided outside and a hydrogen gas source being connected to the other end respectively.
Gas supply pipes 15 and 16 are arranged. The hydrocarbon source is a gas source that supplies a hydrocarbon gas, for example, a CH 4 gas, which is a raw material of the diamond-like carbon thin film. The hydrogen gas source is a soot or polymer film that is deposited on a main part of the apparatus. Is a gas source for supplying hydrogen gas for generating hydrogen plasma for preventing the occurrence of hydrogen plasma.

The first gas supply pipe 15 is provided near the upper surface of the object 5 to supply hydrocarbon gas to the plasma space. That is, the supply pipe 15 is concentrically attached to the lower surface of the extending end of the horizontal plate portion 10a of the lower (the second from the bottom in this example) electrode forming member 10, and as shown by arrows, A gas outlet is provided facing the object 5 so as to inject hydrocarbon gas. Even if this gas injection port is formed by a number of injection holes or short slits arranged over the entire circumference of the supply pipe 15,
Further, it may be formed by one or a small number of elongated slits.

The second gas supply pipe 16 is provided so as to supply hydrogen gas to the plasma space near the exposed surface of the dielectric rectangular plate 3, that is, near the lower surface. That is, the supply pipe 16 is connected to the upper (in this example, the uppermost) electrode forming member 1.
0 is concentrically attached to the lower surface of the extended end of the horizontal plate portion 10a, and a gas outlet is provided facing the rectangular plate 3 so as to inject hydrogen gas as indicated by an arrow. The gas injection port may be formed by a large number of injection holes or short slits arranged over the entire circumference of the supply pipe 16, or may be formed by one or a small number of elongated slits.

In the present invention, the gas supply pipes 15, 16
Is not limited to the ring shape as described above,
For example, the shape may be one or a plurality of bows, or may be a straight shape.

Although not shown, the housing 1
There are well-known in this field, such as a bottom wall for hermetically sealing the inside, a gate for taking in and out the object to be processed, and an exhaust port connected to a vacuum pump so as to depressurize and exhaust the inside of the housing 1. Means are provided.

Next, the operation of the diamond-like carbon thin film deposition apparatus having the above configuration will be described. First, the object 5 is placed on the substrate holder 6 such that the surface to be processed faces upward. Next, the inside of the housing 1 is set to a predetermined pressure, for example,
The pressure is reduced to 10 mTorr or less, and a microwave is supplied from the waveguide 4 to the plasma generation region via the rectangular dielectric plate 3. Then, the first electrode 2 is kept at a temperature of 300 ° C. to 500 ° C. by the heating means 14, and a negative bias of 250 V to 350 V is applied to the second electrode 6 a of the substrate holder 6. The voltage applied at this time is the first
The surface area of the electrode 2 of the second electrode 6a is much larger than that of the case where the first electrode is formed on the inner surface of the flat housing, for example, due to the protrusion formed of the horizontal plate portion 10a. As described above, even when a relatively low voltage is applied, a substantially large voltage sufficient to generate plasma is applied between the first electrode 2 and the second electrode 6a. In this state, the first gas supply pipe 15
A hydrocarbon gas, for example, a CH 4 gas is jetted toward the processing target 5 and supplied near the processing target 5, and a hydrogen gas is supplied to the dielectric rectangular plate 3 through the second gas supply pipe 16.
And supplied near the rectangular plate 3. As a result, plasma by the CH 4 gas is generated near the upper surface of the processing target 5. In the plasma, various kinds of charged particles and neutral radicals are generated as described below.

CH 4 + e → e + CH 3 + CH 3 + +
CN 2 + CH 2 + + CH + CH + + C + C + Then, with the generation of the plasma, the substrate holder 6
When the temperature becomes higher than the normal temperature, the cooling means is operated to maintain the substrate holder 6 at substantially the normal temperature.

As a result, the substrate holder 6 is
Since the temperature is maintained considerably lower than that of the peripheral wall, radicals are intensively adsorbed on the upper surface of the processing target 5. Since a negative bias in the above range is applied to the substrate holder 6, ions are accelerated by a sheath generated on the upper surface of the object to be processed, collide with the adsorbed radicals, and emit hydrogen atoms. As a result, the carbon film is efficiently deposited and formed on the upper surface of the object. At this time, the carbon atoms take a mixed bond form of π bond and σ bond, and have an amorphous structure as a whole. Where σ coupling and π
Bonding is a bonding mode that is the basis of diamond bonding and graphite bonding, respectively.

During this film formation, the temperature distribution in the plasma generation region is constantly sensed by the sensor, and the heating means 14 is controlled based on the temperature information from now on, so that the plasma generation region is maintained at a predetermined temperature distribution. You.

Further, during such a film forming process, hydrogen plasma is generated near the exposed surface of the rectangular plate 3, that is, near the lower surface, by the hydrogen gas supplied near the rectangular plate 3 of the dielectric. . As a result, carbon, which is a source of soot toward the exposed surface, reacts with hydrogen atoms generated by hydrogen plasma as described below, and is carried and exhausted by the gas phase.

C + 4H → CH 4 For this reason, soot and polymer do not accumulate on the exposed surface of the rectangular plate 3 and are always cleaned.

When a diamond-like carbon thin film was formed on a substrate by continuous operation for 10 hours under the conditions of microwave power of 1.5 kW and applied voltage of 350 V using the apparatus having the above configuration, a dielectric rectangular plate 3 was formed. Surface temperature of 300 ℃
In the following, the polymer is deposited on this surface,
As a result, soot was deposited. And 300 ℃ ~ 5
At 00 ° C., neither the polymer nor soot was deposited. For this reason, microwaves could be effectively supplied to the plasma generation region, and a high-quality diamond-like carbon thin film could be effectively formed.

In the above-described embodiment, the protrusion (horizontal plate) for increasing the surface area of the electrode forming member constituting the first electrode does not necessarily need to be projected horizontally. It may be inclined downward. Further, in order to further increase the surface area, the electrode forming member may be further formed with irregularities, for example, by making the surface corrugated.
Further, the first electrode is constituted by a plurality of, in this example, four electrode forming members so as to be dividable, but may be constituted integrally. Although the first electrode is provided separately from the housing, the housing itself may be an electrode as is known. However, in this case, a means for increasing the surface area, for example, a plurality of, preferably a plurality of unevenness formed in the circumferential direction, preferably a plurality of folds, is provided on the inner surface of the housing facing the plasma generation region. is required.

[0026]

In the diamond-like carbon thin film deposition apparatus according to the first and second aspects, a plurality of irregularities are formed on the inner surface of the first electrode which defines the plasma generation region so as to increase the surface area thereof. Therefore, the voltage applied to the second electrode can be reduced in proportion to the surface area increased by the unevenness.

Further, in the diamond-like carbon thin film deposition apparatus according to the third and fourth aspects, in addition to the above effects, the temperature of the microwave supply member can be maintained at 300 ° C. to 500 ° C. Efficiency can be improved. Further, in the diamond-like carbon thin film deposition apparatus according to the third aspect, in addition to the above effects, maintenance and inspection and replacement of the first electrode are facilitated.

[Brief description of the drawings]

FIG. 1 is a view schematically showing a diamond-like carbon thin film deposition apparatus according to one embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Housing, 2 ... First electrode, 3 ... Dielectric rectangular plate, 4 ... Waveguide, 5 ... Workpiece (substrate), 6 ... Substrate holder, 6a ... Second electrode, 14 ... Heating means , 15 ... first
Gas supply pipes, 16 ... second gas supply pipes.

Claims (4)

    [Claims]
  1. A housing having a first electrode defining a plasma generation region therein, a support provided in the housing, supporting a workpiece, and having a second electrode opposed to the first electrode. Means, means for supplying a hydrocarbon gas into the housing, means for applying a voltage between the first electrode and the second electrode, and supply of microwaves to the plasma generation region and supply into the housing. A microwave supply means for generating a plasma of the hydrocarbons thus formed and forming a diamond-like carbon thin film on the object to be processed, and an inner surface defining a plasma generation region of the first electrode, An apparatus for depositing a diamond-like carbon thin film, wherein a plurality of irregularities are formed so as to increase the surface area.
  2. 2. A housing, a first cylindrical electrode disposed along an inner peripheral surface of the housing and defining a plasma generation region therein, and an object to be processed provided on the lower portion of the plasma generation region. Supporting means having a second electrode facing the first electrode, means for supplying a hydrocarbon gas to the plasma generation region, and applying a voltage between the first electrode and the second electrode. Means for applying and a microwave supply provided above the plasma generation region to supply a microwave to generate a plasma of the hydrocarbon supplied into the housing and form a diamond-like carbon thin film on the object to be processed A diamond-like carbon thin film deposition apparatus, comprising: a member; and a plurality of irregularities formed on an inner surface defining a plasma generation region of the first electrode so as to increase a surface area of the first electrode.
  3. 3. A plurality of electrode forming members which are vertically separated from each other in a vertical direction, each have a projecting portion projecting into a plasma region, and are detachably supported by a housing; The supporting member for detachably supporting the member and the electrode forming member are each independently at 300 ° C to 5 ° C.
    3. A diamond-like carbon thin film deposition apparatus according to claim 2, further comprising heating means for controlling the temperature to 00 ° C.
  4. 4. The microwave supply member has a dielectric plate facing a plasma generation region, and a facing surface of the dielectric plate is maintained at a temperature of 300 ° C. to 500 ° C. during film formation. 3. The apparatus for depositing a diamond-like carbon thin film according to claim 2, wherein:
JP9008683A 1997-01-21 1997-01-21 Diamond-like carbon thin film deposition equipment Expired - Fee Related JP3022794B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9008683A JP3022794B2 (en) 1997-01-21 1997-01-21 Diamond-like carbon thin film deposition equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9008683A JP3022794B2 (en) 1997-01-21 1997-01-21 Diamond-like carbon thin film deposition equipment

Publications (2)

Publication Number Publication Date
JPH10204641A true JPH10204641A (en) 1998-08-04
JP3022794B2 JP3022794B2 (en) 2000-03-21

Family

ID=11699731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9008683A Expired - Fee Related JP3022794B2 (en) 1997-01-21 1997-01-21 Diamond-like carbon thin film deposition equipment

Country Status (1)

Country Link
JP (1) JP3022794B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012084848A (en) * 2010-09-16 2012-04-26 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012084848A (en) * 2010-09-16 2012-04-26 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
JP3022794B2 (en) 2000-03-21

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