JPH10177896A - Organic luminescent element - Google Patents
Organic luminescent elementInfo
- Publication number
- JPH10177896A JPH10177896A JP10000455A JP45598A JPH10177896A JP H10177896 A JPH10177896 A JP H10177896A JP 10000455 A JP10000455 A JP 10000455A JP 45598 A JP45598 A JP 45598A JP H10177896 A JPH10177896 A JP H10177896A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- film
- organic
- luminescent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000004891 communication Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000003595 spectral effect Effects 0.000 abstract description 2
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 238000005401 electroluminescence Methods 0.000 description 11
- 238000000295 emission spectrum Methods 0.000 description 11
- 239000013522 chelant Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 230000001427 coherent effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- -1 porphyrin compound Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- CFNMUZCFSDMZPQ-GHXNOFRVSA-N 7-[(z)-3-methyl-4-(4-methyl-5-oxo-2h-furan-2-yl)but-2-enoxy]chromen-2-one Chemical compound C=1C=C2C=CC(=O)OC2=CC=1OC/C=C(/C)CC1OC(=O)C(C)=C1 CFNMUZCFSDMZPQ-GHXNOFRVSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical class C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- NZFNXWQNBYZDAQ-UHFFFAOYSA-N thioridazine hydrochloride Chemical compound Cl.C12=CC(SC)=CC=C2SC2=CC=CC=C2N1CCC1CCCCN1C NZFNXWQNBYZDAQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、表示素子、通信用
発光デバイス、情報ファイル用読／書ヘッド、印刷装置
などに利用される有機発光素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting device used for a display device, a communication light emitting device, an information file read / write head, a printing device, and the like.
【０００２】[0002]
【従来の技術】従来の有機発光素子は、例えば、酸化錫
インジウム等の透明電極を有する透明基板間に、有機発
光体と電気絶縁性の結合剤とからなる発光体を介在さ
せ、前記電極の陽極電極と発光体域との間にポルフィリ
ン系化合物層を形成した有機エレクトロルミネセンスセ
ルが提案されている（特開昭５７−５１７８１号公
報）。該有機エレクトロルミネセンスセルは、両電極間
に印加される信号電界に基づき、ポルフィリン系化合物
からなる正孔注入体により正孔が注入されて、発光する
ものである。2. Description of the Related Art In a conventional organic light-emitting device, for example, a light-emitting body comprising an organic light-emitting body and an electrically insulating binder is interposed between a transparent substrate having a transparent electrode such as indium tin oxide. An organic electroluminescence cell in which a porphyrin-based compound layer is formed between an anode electrode and a light-emitting region has been proposed (JP-A-57-51781). The organic electroluminescence cell emits light when holes are injected by a hole injector made of a porphyrin compound based on a signal electric field applied between the two electrodes.
【０００３】なお、上述のように、本発明は有機材料を
発光層に用いている有機エレクトロルミネセンスに関す
るものであるが、これと類似の技術として、ＺｎＳ：Ｍ
ｎなどの無機材料を発光層に用いている無機エレクトロ
ルミネセンスに関する技術がある。このような無機エレ
クトロルミネセンスの代表的な例が、例えば特開平２−
４６６９５号に開示されている。しかし、無機エレクト
ロルミネセンスは、発光層内を走るホットエレクトロン
によって、発光中心を衝突励起しているのに対し、有機
エレクトロルミネセンスは、電荷の再結合により発光す
るデバイスであり、むしろ発光ダイオ−ドに近いもので
ある。そのために、素子の膜厚も１桁以上異なり、本発
明の微小共振器構造の効果の発現に関する面における関
連性は小さい。As described above, the present invention relates to organic electroluminescence in which an organic material is used for a light emitting layer. As a similar technique, ZnS: M
There is a technique related to inorganic electroluminescence in which an inorganic material such as n is used for a light emitting layer. A typical example of such inorganic electroluminescence is disclosed in, for example,
No. 46695. However, while inorganic electroluminescence impinges upon the emission center by hot electrons running in the light-emitting layer, organic electroluminescence is a device that emits light by recombination of electric charges, and is rather a light-emitting diode. It is close to C. For this reason, the film thicknesses of the elements also differ by one digit or more, and the relevance of the effect of the microresonator structure of the present invention on the surface is small.
【０００４】[0004]
【発明が解決しようとする課題】こうした有機薄膜を用
いた発光素子は安価に提供できると云う特長を有してい
るが、スペクトルの半値幅が広いために用途は表示パネ
ルに限られ、また、各材料毎に各一色の発光しか得られ
ないため、単一材料では単色のディスプレイしか作製で
きなかった。The light emitting device using such an organic thin film has a feature that it can be provided at a low cost, but its application is limited to a display panel because the half width of the spectrum is wide. Since only one color of light was obtained for each material, only a single color display could be produced with a single material.
【０００５】本発明の目的は、スペクトル幅と発光特性
を改善した有機発光素子を提供することにある。An object of the present invention is to provide an organic light emitting device having improved spectral width and light emitting characteristics.
【０００６】また、本発明の他の目的は、上記有機発光
素子用の基板を提供することにある。Another object of the present invention is to provide a substrate for the organic light emitting device.
【０００７】[0007]
【課題を解決するための手段】前記課題を解決する本発
明の要旨は次のとおりである。The gist of the present invention for solving the above problems is as follows.
【０００８】本発明の有機発光素子は、透明な基体と、
該基体上に設けられた発光機能を有する有機薄膜からな
る発光層と、該発光層の、上記基体と反対側の面に設け
られた金属電極と、上記発光層と上記基体との間に設け
られた半透明反射膜を備えている。また、上記半透明反
射膜と上記金属電極との間に光の微小共振器が構成され
ている。[0008] The organic light emitting device of the present invention comprises a transparent substrate,
A light-emitting layer formed of an organic thin film having a light-emitting function provided on the base, a metal electrode provided on a surface of the light-emitting layer opposite to the base, and provided between the light-emitting layer and the base A translucent reflective film. Further, a light microresonator is formed between the translucent reflection film and the metal electrode.
【０００９】本発明においては、透明電極と基体との間
に半透明反射膜を設置し、該半透明反射膜と背面電極す
なわち上記金属電極との間に光の微小共振器を構成する
ようにしている。ここで、上記半透明反射膜と背面電極
すなわち上記金属電極との間の光学的距離が、発光波長
のそれと同じかその整数倍またはその半整数倍であるこ
とが好ましい。それによって、発光スペクトルの半値幅
が縮小される。また、発光効率が向上し、可干渉光の発
生の割合が増大するなど、発光特性を向上できる。In the present invention, a translucent reflective film is provided between the transparent electrode and the base, and a microcavity for light is formed between the translucent reflective film and the back electrode, ie, the metal electrode. ing. Here, it is preferable that the optical distance between the translucent reflective film and the back electrode, that is, the metal electrode is the same as that of the emission wavelength, or an integral multiple thereof, or a half integral multiple thereof. Thereby, the half width of the emission spectrum is reduced. In addition, the light emission characteristics can be improved, for example, the light emission efficiency is improved and the ratio of generation of coherent light is increased.
【００１０】[0010]
〔実施例 １〕図１は、本発明の一実施例の発光素子の
構造を示す模式断面図である。Embodiment 1 FIG. 1 is a schematic sectional view showing the structure of a light emitting device according to one embodiment of the present invention.
【００１１】硝子基板１上に、ＴｉＯ2膜とＳｉＯ2膜と
を積層した半透明反射膜２が形成されている。該半透明
反射膜２上に、透明導電膜（Ｉndium Ｔin Ｏxide：Ｉ
ＴＯ膜）３を形成し、その上にトリフェニルジアミン誘
導体（ＴＡＤ）からなるホール注入層４、アルミキレー
トの発光層５、オキシジアゾール誘導体（ＰＢＤ）の電
子注入層６、Ａｇ−Ｍｇ金属電極７が順次形成されてい
る。なお、透明導電膜３、ホール注入層４、発光層５お
よび電子注入層６のそれぞれの膜厚と屈折率との積から
得られる光学的距離の和は、アルミキレートのエレクト
ロルミネセント（ＥＬ）発光のピーク波長である５３０
ｎｍと一致させる。これによって本発明の共振器が構成
される。On a glass substrate 1, a translucent reflective film 2 is formed by laminating a TiO 2 film and a SiO 2 film. A transparent conductive film (Indium Tin Oxide: I) is formed on the translucent reflection film 2.
A TO film 3 is formed thereon, and a hole injection layer 4 composed of a triphenyldiamine derivative (TAD), a light emitting layer 5 of aluminum chelate, an electron injection layer 6 of an oxydiazole derivative (PBD), and an Ag-Mg metal electrode are formed thereon. 7 are sequentially formed. Note that the sum of the optical distances obtained from the products of the thicknesses of the transparent conductive film 3, the hole injection layer 4, the light emitting layer 5, and the electron injection layer 6 and the refractive index is the electroluminescence (EL) of aluminum chelate. 530 which is the peak wavelength of light emission
nm. This constitutes the resonator of the present invention.
【００１２】図１において、ホール注入層４および電子
注入層６は、高性能な特性を要求しない場合には必須で
はなく、これらのいずれかまたは両方を省略して用いる
ことができる。その際には、透明導電膜３からホールが
注入され、また、金属電極７から電子が注入され、本発
明の発光素子が得られるが、ホール注入層４および電子
注入層６を設けた方がより好ましい。In FIG. 1, the hole injection layer 4 and the electron injection layer 6 are not essential when high performance is not required, and one or both of them can be omitted. At that time, holes are injected from the transparent conductive film 3 and electrons are injected from the metal electrode 7 to obtain the light emitting device of the present invention. However, it is better to provide the hole injection layer 4 and the electron injection layer 6. More preferred.
【００１３】前記半透明反射膜２の反射率は発光層５の
材料の性能と、素子の用途によって選択される。その反
射率の上限は光共振器が自己破壊することなく蓄積でき
るエネルギーの限界により制限される。透過率で５０〜
０.１％、反射率で５０〜９９.９％である。少なくとも
１０μＷ／ｃｍ2の出射光を得るためには、取り出す光
の透過率で０.１％よりは小さくできない。また、反射
率では９９.９％が限度である。反射率を小さくし過ぎ
ると光共振器としての性質を失うため、５０％を下廻る
反射率のものを用いると、十分なスペクトル幅の減少を
得ることができない。The reflectivity of the translucent reflective film 2 is selected according to the performance of the material of the light emitting layer 5 and the use of the device. The upper limit of the reflectivity is limited by the limit of energy that the optical resonator can store without self-destruction. 50 ~ in transmittance
0.1% and a reflectance of 50 to 99.9%. In order to obtain emitted light of at least 10 μW / cm 2 , the transmittance of the extracted light cannot be smaller than 0.1%. The limit of the reflectance is 99.9%. If the reflectivity is too low, the properties as an optical resonator will be lost. Therefore, if the reflectivity is less than 50%, a sufficient reduction in the spectrum width cannot be obtained.
【００１４】上記において発光層５としてはアルミキレ
ートを用いたが、ペリレン誘導体、ペリノン誘導体、ナ
フタレン誘導体，クマリン誘導体，オキサジアゾール，
ビスベンゾキサゾリン，アルダジン，ピラジン誘導体，
ジスチルベンゼン誘導体，ポリフェニル誘導体，ビスス
チルアントラセン誘導体，キレート金属錯体等が用いら
れる。In the above, aluminum chelate is used for the light emitting layer 5, but a perylene derivative, a perinone derivative, a naphthalene derivative, a coumarin derivative, an oxadiazole,
Bisbenzoxazoline, aldazine, pyrazine derivatives,
Distilbenzene derivatives, polyphenyl derivatives, bisstylanthracene derivatives, chelate metal complexes and the like are used.
【００１５】上記の有機薄膜は蒸着、塗布、化学反応に
よる成長、ラングミュア・ブロジェット法等により作製
することができる。また、複数の有機材料を混合して用
いることもできる。The above-mentioned organic thin film can be prepared by vapor deposition, coating, growth by a chemical reaction, Langmuir-Blodgett method or the like. Further, a plurality of organic materials can be mixed and used.
【００１６】図２は、従来構造の有機ＥＬ素子の構造を
示す模式断面図である。即ち、図１の構造から半透明反
射膜２を除いた構造となっている。FIG. 2 is a schematic sectional view showing the structure of a conventional organic EL device. That is, the structure is such that the translucent reflective film 2 is removed from the structure of FIG.
【００１７】図３は、図１の素子と、図２の素子の、発
光スペクトルを比較したスペクトル図である。図１の素
子のスペクトルＡは、図２の素子のスペクトルＢより半
値幅が小さい。これは、半透明反射膜２によって、素子
内部で発光を共振させることにより、共振周波数の電磁
波を選択的に発生させた結果によるものである。このよ
うに、発光を共振させることにより、発光スペクトルの
半値幅の減少、発光効率の向上、可干渉光の発生などの
効果を得ることができる。この共振器の共振器部分の光
学的な距離を発光波長により近く合わせることにより、
より大きな効果を得ることができる。FIG. 3 is a spectrum diagram comparing the emission spectra of the device of FIG. 1 and the device of FIG. The spectrum A of the device of FIG. 1 has a smaller half width than the spectrum B of the device of FIG. This is because the translucent reflection film 2 resonates light emission inside the device, thereby selectively generating an electromagnetic wave having a resonance frequency. By resonating light emission in this manner, effects such as a reduction in the half width of the emission spectrum, an improvement in luminous efficiency, and generation of coherent light can be obtained. By adjusting the optical distance of the resonator part of this resonator closer to the emission wavelength,
A greater effect can be obtained.
【００１８】図４は、上記共振器部分の光学的な距離
と、発光スペクトルの半値幅の関係を示すグラフであ
る。これは、図１の素子構造において、ホール注入層４
の膜厚のみを変えた素子を用いて測定した結果で、半透
明反射膜２の無い場合の半値幅を１００としている。光
学的距離が発光のピーク波長と一致する５３０ｎｍ付近
で最も半値幅が小さく、５３０ｎｍから外れるに従って
急速に大きくなる。図３の半透明反射膜２がない素子
（スペクトルＢ）では、発光強度が５３０ｎｍの発光強
度の約１／２になる波長は４８０ｎｍと５８０ｎｍであ
ることが分かる。この範囲は、図４において半値幅の減
少が見られる範囲と対応している。FIG. 4 is a graph showing the relationship between the optical distance of the resonator and the half-width of the emission spectrum. This is because the hole injection layer 4 in the device structure of FIG.
The measurement was performed using an element in which only the film thickness was changed, and the half width when there was no translucent reflective film 2 was set to 100. The half width is the smallest at around 530 nm where the optical distance coincides with the peak wavelength of light emission, and increases rapidly as the wavelength departs from 530 nm. In the element without the translucent reflective film 2 (spectrum B) in FIG. 3, it can be seen that the wavelengths at which the emission intensity is about の of the emission intensity at 530 nm are 480 nm and 580 nm. This range corresponds to the range in which the half width is reduced in FIG.
【００１９】共振効果が得られるのは、光学的な距離が
取り出される発光のピーク波長の０.９〜１.１倍の範囲
にある時である。この範囲は、図４において半値幅の減
少が見られる波長領域と対応している。The resonance effect is obtained when the optical distance is in the range of 0.9 to 1.1 times the peak wavelength of the emitted light. This range corresponds to the wavelength region where the half width is reduced in FIG.
【００２０】本実施例においては、発光層材料としてア
ルミニウムキレートを単体で用いたが、電子−ホール結
合により発光を示す有機材料であれば、単体に限らず、
混合体や積層構造でも用いることができる。In this embodiment, aluminum chelate is used alone as a light emitting layer material. However, any organic material that emits light by electron-hole bonding is not limited to aluminum chelate.
A mixture or a laminated structure can also be used.
【００２１】また、共振した発光を安定させるために
は、素子の温度を一定に保つ機構を設けることが重要で
ある。In order to stabilize the resonated light emission, it is important to provide a mechanism for keeping the temperature of the element constant.
【００２２】素子構造や半透明反射膜２の構成材料によ
って、透過率および反射率の最適値が異なるが、吸収率
については０に近いほど望ましい。The optimum values of the transmittance and the reflectivity differ depending on the element structure and the constituent material of the translucent reflective film 2, but it is desirable that the absorptance is close to zero.
【００２３】半透明反射膜２としては、パターニングを
施し、一部に発光を取り出す窓を有する金属の全反射膜
を用いることもできる。また、横方向に発光が漏れにく
い素子構造とすることにより、発光特性を更に向上する
ことができる。As the translucent reflection film 2, a metal total reflection film which is patterned and partially has a window for taking out light can be used. In addition, by adopting an element structure in which light emission does not easily leak in the lateral direction, light emission characteristics can be further improved.
【００２４】本実施例では、共振器としての光学的距離
が発光波長と同じ場合について説明したが、理論的には
発光波長の２倍，３倍，…ｎ倍と整数倍の場合、及び１
／２，３／２，…など半整数倍の場合にも同様の共振の
効果を得ることができる。In this embodiment, the case where the optical distance of the resonator is the same as the emission wavelength has been described. However, theoretically, when the emission wavelength is an integral multiple of twice, three times,.
The same resonance effect can be obtained in the case of a half integral multiple such as / 2, 3/2,.
【００２５】また、本実施例では、上下の鏡面での反射
による光の位相シフトの総計が０または１波長である場
合について示しているが、金属面で１／２波長シフト
し、半透明反射膜で波長シフトがない素子構成の場合
は、光学的距離が発光波長の１／４，３／４，５／４、
……倍の時に共振させることができる。In this embodiment, a case is shown in which the total phase shift of light due to reflection on the upper and lower mirror surfaces is 0 or 1 wavelength. In the case of an element configuration having no wavelength shift in the film, the optical distance is 1/4, 3/4, 5/4 of the emission wavelength,
... Resonance can be achieved at double times.
【００２６】しかし、実際の素子においては、素子作成
に由来して共振の生ずる鋭さにぼやけが生ずる。そのた
めに上記効果は膜厚が小さいほど鋭く、倍数が大きくな
るに従って共振の出方が不明瞭となるので、１０倍程度
が実用上の限界である。However, in an actual device, the sharpness at which resonance occurs due to the fabrication of the device is blurred. For this reason, the above effect is sharper as the film thickness is smaller, and the resonance becomes less clear as the multiple becomes larger. Therefore, the practical limit is about 10 times.
【００２７】本実施例の構造の素子は、電荷注入により
電界発光を生じさせ、また、透明基板側から照射する光
により発光層に螢光を発生させて、電界発光と同様の半
値幅の狭い発光スペクトルを生じさせることができる。
この場合には、透明電極および発光層以外の有機薄膜は
省略することも可能である。In the device having the structure of this embodiment, electroluminescence is generated by charge injection, and fluorescence is generated in the light emitting layer by light irradiated from the transparent substrate side. An emission spectrum can be generated.
In this case, the organic thin film other than the transparent electrode and the light emitting layer can be omitted.
【００２８】〔実施例 ２〕図５に光励起による発光を
利用した共振器素子の模式断面図を示す。[Embodiment 2] FIG. 5 is a schematic sectional view of a resonator element utilizing light emission by light excitation.
【００２９】全反射金属膜８とＴｉＯ2／ＳｉＯ2の積層
体からなる半透明反射膜２との間に、有機蛍光薄膜９と
してアルミキレートが挾まれた構造に形成した。これ
に、半透明反射膜２側から波長４０６ｎｍの光を照射す
ることにより有機蛍光薄膜９から可視光を取り出すこと
ができる。An organic fluorescent thin film 9 was formed between the total reflection metal film 8 and the translucent reflection film 2 made of a laminate of TiO 2 / SiO 2 , in which an aluminum chelate was sandwiched. By irradiating this with light having a wavelength of 406 nm from the translucent reflective film 2 side, visible light can be extracted from the organic fluorescent thin film 9.
【００３０】図６に前記有機蛍光薄膜（アルミキレー
ト）の膜厚と発光スペクトルの関係を示す。アルミキレ
ートの膜厚により発光ピークの位置、半値幅、強度を変
えることができる。また、半透明反射膜の反射特性を変
えることによっても発光スペクトルの形状を変えること
ができる。FIG. 6 shows the relationship between the thickness of the organic fluorescent thin film (aluminum chelate) and the emission spectrum. The emission peak position, half width, and intensity can be changed depending on the thickness of the aluminum chelate. The shape of the emission spectrum can also be changed by changing the reflection characteristics of the translucent reflection film.
【００３１】本発明の有機発光素子は、光共振器の効果
により発光スペクトルの半値幅の縮小、発光効率の向
上、可干渉光の発生など発光特性を向上することができ
る。The organic light-emitting device of the present invention can improve the light-emitting characteristics such as reduction of the half width of the light-emission spectrum, improvement of the light-emission efficiency and generation of coherent light by the effect of the optical resonator.
【００３２】上記有機発光素子は、これまでのＧａＡ
ｓ，ＳｉＣ，ＺｎＳｅ等の無機半導体により作製されて
きた発光ダイオードや半導体レーザーの代替として用い
ることができ、光通信素子、情報表示パネル、光記録フ
ァイルの読み／書き用ヘッド、レーザープリンタの光ヘ
ッドとしての利用が可能である。The above-mentioned organic light-emitting device is a conventional GaAs device.
It can be used as an alternative to light emitting diodes and semiconductor lasers made of inorganic semiconductors such as s, SiC, ZnSe, etc., optical communication elements, information display panels, read / write heads for optical recording files, and optical heads for laser printers. It is possible to use as.
【図１】図１は、本発明の一実施例の発光素子の構造を
示す模式断面図である。FIG. 1 is a schematic sectional view showing the structure of a light emitting device according to one embodiment of the present invention.
【図２】図２は、従来の発光素子の構造を示す模式断面
図である。FIG. 2 is a schematic sectional view showing the structure of a conventional light emitting device.
【図３】図３は、図１の素子と図２の素子との発光スペ
クトルの比較図である。FIG. 3 is a comparison diagram of emission spectra of the device of FIG. 1 and the device of FIG. 2;
【図４】図４は、本発明の一実施例の半透明反射膜を有
する発光素子の共振器部分の光学的な距離と発光スペク
トルの半値幅の関係を示すグラフである。FIG. 4 is a graph showing a relationship between an optical distance of a resonator portion of a light emitting device having a translucent reflective film according to an embodiment of the present invention and a half width of an emission spectrum.
【図５】図５は、本発明の一実施例の発光素子の構造を
示す模式断面図である。FIG. 5 is a schematic sectional view showing a structure of a light emitting device according to one embodiment of the present invention.
【図６】図６は、有機蛍光膜（アルミキレート）の膜厚
と発光スペクトルの関係を示すスペクトル図である。FIG. 6 is a spectrum diagram showing a relationship between a film thickness of an organic fluorescent film (aluminum chelate) and an emission spectrum.
１ 硝子基体 ２ 半透明反射膜 ３ 透明導電膜 ４ ホ−ル注入層 ５ 発光層 ６ 電子注入層 ７ 金属電極 REFERENCE SIGNS LIST 1 glass substrate 2 translucent reflective film 3 transparent conductive film 4 hole injection layer 5 light emitting layer 6 electron injection layer 7 metal electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 角田 敦 茨城県日立市大みか町七丁目１番１号 株 式会社日立製作所日立研究所内 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Atsushi Tsunoda 7-1-1, Omika-cho, Hitachi City, Ibaraki Prefecture Within Hitachi Research Laboratory, Hitachi, Ltd.
Claims (3)
機能を有する有機薄膜からなる発光層と、該発光層の、
上記基体と反対側の面に設けられた金属電極と、上記発
光層と上記基体との間に設けられた半透明反射膜を有
し、該反射膜と上記金属電極との間に光の微小共振器が
構成されていることを特徴とする有機発光素子。1. A transparent substrate, a light-emitting layer comprising an organic thin film having a light-emitting function provided on the substrate,
A metal electrode provided on the surface opposite to the base, and a translucent reflective film provided between the light emitting layer and the base, and a minute light beam between the reflective film and the metal electrode; An organic light-emitting device comprising a resonator.
上記半透明反射膜は、誘電体の多層膜から成り、上記半
透明反射膜と上記金属電極との間に透明導電膜を有する
ことを特徴とする有機発光素子。2. The organic light emitting device according to claim 1, wherein
An organic light-emitting device, wherein the translucent reflective film is made of a dielectric multilayer film, and has a transparent conductive film between the translucent reflective film and the metal electrode.
上記反射膜と上記金属電極との間の光学的距離を、発光
波長のそれと同じかその整数倍またはその半整数倍とし
たことを特徴とする有機発光素子。3. The organic light emitting device according to claim 2, wherein
An organic light emitting device, wherein an optical distance between the reflection film and the metal electrode is equal to, or an integral multiple of, or a half integral multiple of the emission wavelength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10000455A JPH10177896A (en) | 1998-01-05 | 1998-01-05 | Organic luminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10000455A JPH10177896A (en) | 1998-01-05 | 1998-01-05 | Organic luminescent element |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50797594A Division JP2830474B2 (en) | 1993-09-20 | 1993-09-20 | Organic light emitting device and its substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10177896A true JPH10177896A (en) | 1998-06-30 |
Family
ID=11474280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10000455A Pending JPH10177896A (en) | 1998-01-05 | 1998-01-05 | Organic luminescent element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10177896A (en) |
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