JPH0979388A - Gate valve - Google Patents

Abstract

PROBLEM TO BE SOLVED: To add a gas feed and discharge function to a gate valve, to reduce a cost, and to effectively utilize a space by a method wherein an introduction hole is formed in a valve body and gas is fed in a container through the introduction hole. SOLUTION: A distribution chamber 18 extending in a lateral direction (a horizontal direction) is formed in the valve element 17 of a horizontally elongated rectangular gate valve 15 to close a carrier D for intercommunicating a reaction pipe and a conveyance chamber. The given number of introduction holes 19 are formed in the valve element 17 from the reaction pipe side, and the introduction holes 19 are communicated with the distribution chamber 18. A rod 20 to support the valve element 17, and a continuity flow passage 21 is formed along the axis of a rod 20 in such a state to span between the rod 20 and the valve element 17, the continuity flow passage 21 is communicated with the distribution chamber 18 and connected to a reaction gas feed source. In such a state that the interior of a reaction pipe is heated to a given temperature, a wafer is conveyed in the reaction pipe and the reaction pipe is closed with the gate valve 15. Reaction gas is introduced in the reaction pipe through the continuity flow passage 21, the distribution chamber 18, and the introduction hole 19, and exhausted through an exhaust port.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gate valve provided at an opening of an airtight container and hermetically closing the opening.

[0002]

2. Description of the Related Art In a semiconductor manufacturing apparatus or the like, processing is performed under a required atmosphere or under vacuum, and a plurality of processing chambers are provided in series.
Alternatively, they are continuously provided via a transfer chamber or the like. Therefore, a gate valve is provided between the processing chambers, or between the processing chamber and the transfer chamber, etc., to hermetically shut off the atmosphere and the vacuum between the processing chamber and the transport chamber.

A conventional gate valve will be described with reference to FIG.

FIG. 4 shows a single-wafer semiconductor manufacturing apparatus. In the figure, reference numeral 1 is a cylindrical reaction tube made of quartz that defines a flat space, a heater 2 is provided around the reaction tube 1, and a heater 2 is provided around the reaction tube 1. Further, an insulating material 3 is provided on the periphery. An air supply flange 4 is provided at the upstream end of the reaction tube 1, and an exhaust flange 5 is provided at the downstream end. A transfer chamber 6 is provided on the air supply flange 4.
Is provided in an airtight manner, and the opening that connects the transfer chamber 6 and the reaction tube 1 is closed by a gate valve 7, and an O-ring 12 is provided between the opening and the gate valve 7, so that the airtightness in the closed state is improved. Has been maintained. The opening / closing mechanism portion of the gate valve 7 is provided below the transfer chamber 6, and the penetrating portion of the opening / closing mechanism portion of the transfer chamber 6 is hermetically sealed by a bellows 13. The opening of the exhaust flange 5 is hermetically sealed by a closing plate 8.

An air supply port 10 is provided in the air supply flange 4, an exhaust port 11 is provided in the exhaust flange 5, and a reaction gas necessary for processing the wafer 9 is supplied from the air supply port 10. The gas after the reaction is exhausted from the exhaust port 11.

Inside the transfer chamber 6, there is provided a transfer device (not shown) for loading and unloading the wafer 9 to be processed into and out of the reaction tube 1, and the gate valve 7 is opened. The wafer is transferred in this state.

In the processing of the wafer 9, the reaction tube 1 is sealed by the gate valve 7 while the inside of the reaction tube 1 is heated to the required temperature by the heater 2, and the reaction is performed from the air supply port 10 of the air supply flange 4. A gas is introduced, the reaction gas flows diagonally through the reaction tube 1, and is further exhausted from the exhaust port 11.

[0008]

In the conventional semiconductor manufacturing apparatus described above, the reaction gas is introduced from the air supply port 10 provided in the air supply flange 4, so that the air supply flange 4 is required as the structure of the apparatus. However, the structure is complicated, the manufacturing cost of the device is increased, and the space for providing the air supply flange 4 is required, which is an obstacle to downsizing of the device.

In view of the above situation, the present invention aims to reduce the cost and effectively use the space by adding a gas supply / discharge function to the gate valve.

[0010]

According to the present invention, a valve body is provided with an introduction hole so that gas can be supplied into the container through the introduction hole, and the reaction gas is introduced from the valve body. ,
Since the structure is simple and the number of parts is reduced, the manufacturing cost of the apparatus can be reduced, the apparatus can be downsized, and since the flow direction is not changed when the reaction gas is introduced, the flow is less disturbed and the processing is stable.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

In FIG. 1, the same parts as those shown in FIG. 4 are designated by the same reference numerals.

A heater 2 is provided around a cylindrical reaction tube 1 made of quartz which defines a flat space, and an insulating material 3 is provided further around the heater 2. A transfer chamber 6 is airtightly provided at the upstream end of the reaction tube 1, and an exhaust flange 5 is provided at the downstream end.
Is provided, and the opening of the exhaust flange 5 is airtightly closed by the closing plate 8.

The transfer port 16 connecting the transfer chamber 6 and the reaction tube 1 is closed by a gate valve 15, and the transfer port 16 is closed.
An O-ring 12 is provided between the gate valve 15 and the gate valve 15 to maintain airtightness in the closed state. The opening / closing mechanism part of the gate valve 15 is provided below the transfer chamber 6, and the penetrating part of the opening / closing mechanism part in the transfer chamber 6 is hermetically sealed by a bellows (not shown). The opening of the exhaust flange 5 is hermetically sealed by a closing plate 8.

The structure of the gate valve 15 is shown in FIGS.
This will be described below.

A distribution chamber 18 extending in the lateral direction (horizontal direction) is bored inside a horizontally elongated rectangular valve body 17 that closes the transfer port 16 that connects the reaction tube 1 and the transfer chamber 6. The required number of introduction holes 19 are formed in the reaction tube 17 from the side of the reaction tube 1. The introduction hole 19 communicates with the distribution chamber 18,
It is provided along the distribution chamber 18 at required intervals. A rod 20 that supports the valve body 17, and a conduction flow passage 21 that extends over the valve body 17 are provided along the axis of the rod 20, and the conduction flow passage 21 communicates with the distribution chamber 18. It is also connected to a reaction gas supply source (not shown).

In the processing of the wafer 9, the wafer 9 is loaded into the reaction tube 1 while the inside of the reaction tube 1 is heated to the required temperature by the heater 2, and the reaction tube 1 is sealed by the gate valve 15, A reaction gas is introduced into the reaction tube 1 through the flow passage 21, the distribution chamber 18, and the introduction hole 19. The introduction hole 19
The reaction gas further flowing in flows in the horizontal direction and is further exhausted from the exhaust port 11.

Since the inflow direction of the reaction gas is horizontal as described above, a laminar flow state suitable for the reaction can be obtained immediately after the inflow time, and stable treatment can be performed.

Although the introduction holes 19 are formed in one row in the above embodiment, they may be formed in two rows or dispersed in a required width.

[0020]

As described above, according to the present invention, since the reaction gas is introduced from the valve body, the air supply flange is not required as in the conventional case, the structure is simple, and the number of parts is reduced. Therefore, the manufacturing cost of the device can be reduced and the device can be downsized. Since the flow direction is not changed when the reaction gas is introduced, there is little turbulence in the flow, and stable processing is possible.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of the present invention.

FIG. 2 is a front view showing a valve body according to the embodiment.

FIG. 3 is a side sectional view showing a valve element according to the embodiment.

FIG. 4 is a sectional view showing a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Reaction tube 2 Heater 6 Transfer chamber 15 Gate valve 17 Valve body 18 Distribution chamber 19 Introduction hole 21 Conducting flow path

Claims (1)

[Claims] 1. A gate valve characterized in that an introduction hole is provided in a valve body, and gas can be supplied into the container through the introduction hole.