JPH09305933A - Magnetoresistance effect element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an MR element which provides stable magnetoresistive characteristic even if high output or narrow tack is realized. SOLUTION: A flat and almost rectangular MR film 1, a latter end electrode and a former end electrode not illustrated and connected respectively to both end portions in the longitudinal direction of the MR film 1 are provided and magnetic stabilizing materials 2, 3 which are formed by stacking soft magnetic material films 6, 8 and hard magnetic material films 7, 9 provided in the latter part of above material films of the MR film 1 are arranged in the both ends side in the width direction of the MR film 1. With these magnetic domain stabilizing materials 2, 3, a bias magnetic field having the parallel element in the width direction of the MR film 1 is generated to control the magnetizing direction Df of the MR film 1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element suitable for application to a so-called vertical type magnetoresistive effect type magnetic head.

[0002]

2. Description of the Related Art Conventionally, a magnetoresistive effect element (hereinafter referred to as an MR element) using a magnetic film having a magnetoresistive effect (hereinafter referred to as an MR film) has been used as an element for detecting a magnetic field. It is used as a sensor, a magnetic head, a rotation detecting element, a position detecting element, and the like.

FIG. 18 shows the simplest MR element 1
The structure of 10 is shown. The MR element 110, MR layer 101 made of soft magnetic material of a single layer having a width W, a length L is formed so that its magnetization easy axis D _e is parallel to the width direction, of the MR film 101 Electrodes (not shown) are arranged at both ends in the longitudinal direction. Such an MR element 11
At 0, the resistance change of the MR film 101 should occur due to the external magnetic field Hext, and if the sense current i is passed between the electrodes, the external magnetic field Hext should be detected as the voltage change between the electrodes.

However, the MR element 11 described above is actually used.
When 0 is applied to the external magnetic field Hext from a direction parallel to the longitudinal direction, a very large hysteresis is generated, and when electric resistance is measured, the external magnetic field Hex is generated.
Resistance change with t does not appear. This is because, as shown in FIG. 19, the ferromagnetic body 100 having a finite shape has a magnetic domain structure in which no magnetic pole is output to the outside in order to avoid an increase in magnetostatic energy.

Therefore, when the MR element is applied to the magnetic head, as described above, the external magnetic field Hext (in this case, the signal magnetic field) is arranged so that the direction thereof is parallel to the direction of the sense current ( Instead of being a so-called vertical MR head, it is arranged so that the direction of the external magnetic field Hext is perpendicular to the direction of the sense current (so-called horizontal MR head).
Become the head. ) Has been done. However, this horizontal M
In the R head, the track width is determined by the distance between the electrodes, so there is a limit to narrowing the track.

Therefore, since the track width can be determined by the width of the MR film and the magnetization direction of the MR film can be oriented in the easy axis direction D _e , the vertical MR head is constructed. An MR element in which two layers of MR films are laminated via a magnetic film has been considered. As shown in FIG. 20, in this MR element 120, a first MR film 102 and a second MR film 103 are laminated via a non-magnetic film (not shown), and both MR films 102, 103 are formed in the longitudinal direction. Electrodes (not shown) are arranged at both ends of the respective.

In such an MR element 120, the magneto-static interaction between the MR films 102 and 103 influences the magnetization direction D _{f of} each other (magnetic coupling effect), so that the MR film flows between the electrodes. Both M by sense current i
By utilizing the fact that a current magnetic field Hi in a predetermined direction is generated in the R films 102 and 103 (self-bias effect), both MR films 1
The magnetization directions D _{f of} 02 and 103 can be directed to the easy magnetization axis direction D _e . The MR element 120 having such a configuration
If so, the magnetization direction D _f of both MR films 102 and 103 also rotates due to the external magnetic field H ext from the direction perpendicular to the easy magnetization axis direction D _e , and the resistance change occurs.

In the MR element 120, it is considered that Barkhausen noise can be prevented because the MR films 102 and 103 are made into a single magnetic domain by the above-mentioned magnetic coupling effect and self-bias effect.

[0009]

However, in the above-described MR element 120, electrodes are arranged on both ends of the MR films 102 and 103 in the longitudinal direction, respectively.
The self-bias effect does not work in the portion overlapping this electrode. Therefore, each MR film 10 in the portion overlapping the electrode
In Nos. 2 and 103, a domain wall is likely to occur, which may cause Barkhausen noise.

The output of the MR element 120 as described above is Is ×, where Is is the sense current, Δρ is the specific resistance value which changes with the external magnetic field Hext, L is the magnetic sensitive portion length, and S is the cross sectional area of the magnetic sensitive portion. Since it can be represented by Δρ × L / S,
In order to improve the output, the cross-sectional area S of the magnetic sensitive section may be reduced. However, if both MR films 102 and 103 are thinned in order to reduce the cross-sectional area S of the magnetically sensitive portion,
Since the specific resistance greatly increases and the impedance increases, it is not preferable to apply the MR element 120 to a magnetic head. Further, by thinning the MR films 102 and 103 in this MR element 120, for example, both MR films 102 and 103,
In order to set the total film thickness of 103 to about 20 nm, it is necessary to set the film thickness of each of the MR films 102 and 103 to about 10 nm, which further increases the specific resistance.

Further, even if the widths of the MR films 102 and 103 are narrowed in order to reduce the cross-sectional area of the magnetically sensitive portion, the resistance curve has a large hysteresis. This is because the first MR film 102, the non-magnetic film 104, the second M film
When patterning the laminated body made of the R film 103 into a predetermined shape, it is difficult to etch so that the cross section becomes vertical, and the first MR film 102 and the second MR film 103 have different areas. It happens because it ends up. That is,
If there is a difference between the width of the first MR film 102 and the width of the second MR film 103, there is a difference in the magnitude of the magnetic pole magnetic field generated at the end faces of both MR films 102 and 103, and both MR films 102. 1
The magnetization direction D _f in 03 cannot be oriented in the easy magnetization axis direction D _e . Both MR films 102, 1
The narrowing of the width of 03 is indispensable for narrowing the track of the magnetic head, but the narrowing of the width makes the difference between the widths of the two harder to ignore and the resistance curve becomes unstable.

In view of the conventional situation, it is an object of the present invention to provide an MR element which can obtain a stable magnetoresistive characteristic even when a high output and a narrow track are achieved.

[0013]

SUMMARY OF THE INVENTION The present invention achieves the above-mentioned object, and a magnetoresistive effect film (M
R film), a first electrode connected to one end of the MR film in the longitudinal direction, and a second electrode connected to the other end of the MR film (MR element). ), M
The soft magnetic material film and the MR
A magnetic domain stabilizing material is provided which is laminated with a hard magnetic material film which is provided so as to recede from the film, and the magnetic domain stabilizing material generates a bias magnetic field having a component parallel to the width direction of the MR film. It is done like this.

In the present invention, the magnetic domain stabilizing material comprises a laminated body of a soft magnetic material film and a hard magnetic material film. The hard magnetic material film is magnetized so as to have a component parallel to the width direction of the MR film. If this is the case, the magnetization direction of the soft magnetic material film in the overlapping region will be oriented in the same direction as the magnetization direction of the hard magnetic material film due to the ferromagnetic coupling, and further, in the region not overlapping the hard magnetic material film. The magnetization direction of the magnetic material film also comes to the same direction. That is, the magnetic domain stabilizing material as a whole generates a bias magnetic field having a component parallel to the width direction of the MR film.

If the coercive force of the magnetic domain stabilizing material as a whole is sufficiently large, the magnetization of the magnetic domain stabilizing material and the magnetization of the MR film are ferromagnetically coupled in a region where the magnetic domain stabilizing material and the MR film are adjacent to each other. Then, the magnetization direction D _f of the MR film becomes the same as the magnetization direction D _p of the magnetic domain stabilizing material. In this way, if a bias magnetic field sufficient to overcome the magnetostatic anisotropy in the longitudinal direction can be applied, the MR of a single layer can be applied.
Even in a film, the magnetization direction D _f is oriented in the width direction.
Incidentally, by setting the magnetization easy axis D _e of the MR film in the width direction, with a relatively small bias magnetic field, but can direct the magnetization direction D _f of the MR film in the width direction, a sufficiently large bias magnetic field if it is applied to, there is no need to set the easy axis direction D _e of the MR film in the width direction.

If the magnetization direction D _f of the MR film can be oriented in the width direction in this way, the magnetization distribution of the MR film is stabilized in a single domain state, so that the magnetoresistive characteristic of the MR element has a hysteresis. Can be not stable.

In the present invention, the hard magnetic material film of the magnetic domain stabilizing material is made to recede from the soft magnetic material film, but the magnitude of the bias magnetic field applied to the MR film can be controlled by the receding distance.

By the way, when the MR film and the magnetic domain stabilizing material are in contact with each other, the sense current leaks into the magnetic domain stabilizing material when the sense current is passed between the first electrode and the second electrode. There is fear. Since the leakage current does not detect the magnetic resistance, if the current flowing through the soft magnetic material is lost due to the leakage current, the magnetic resistance ratio of the soft magnetic material is reduced accordingly. Therefore, the MR film and the magnetic domain stabilizing material are not in contact with each other, and it is necessary to secure sufficient insulation. In the present invention, since the hard magnetic material film is recessed from the soft magnetic material film, the film thickness of the magnetic domain stabilizing material in the portion close to the MR film can be reduced. The probability of short circuit can be reduced.

In the MR element as described above, the soft magnetic material film of the magnetic domain stabilizing material and the MR film may be made of different materials, but they are preferably made of a common material. In this case, since the soft magnetic material film of the magnetic domain stabilizing material and the MR film can be formed at the same time, the manufacturing process can be simplified and the productivity is improved.

If the magnetic domain stabilizing material is disposed on both ends of the MR film in the width direction so as to be symmetrical with respect to a center line parallel to the longitudinal direction of the MR film, what kind of Although it may be formed in a shape, it is preferable that at least the soft magnetic material film of the magnetic domain stabilizing material is formed so as to be connected to each other at a position retracted from the MR film to form a closed magnetic path. This makes it possible to apply a more uniform and stable bias magnetic field to the MR film.

In the present invention, the MR film and the magnetic domain stabilizing material are not in contact with each other in order to prevent current loss, but the MR film and the magnetic domain stabilizing material are not in contact with each other. Also, the magnetic domain stabilizing material is continuously arranged from one end to the other end in the longitudinal direction of the MR film, and the first electrode and the second electrode
If both electrodes are in contact with each other, the current will be lost. Therefore, the magnetic domain stabilizing material is M
At least 1 from one end to the other end in the longitudinal direction of the R film
It is suitable to be separated at a place.

Further, in order to suppress current loss, a magnetic domain stabilizing material may be arranged so as to be in non-contact with at least one of the first electrode and the second electrode. To do this,
At least one of the first electrode and the second electrode may be formed with a narrow width so as not to overlap the magnetic domain stabilizing material, but the magnetic domain stabilizing material may be formed from one end in the longitudinal direction of the MR film. It is preferable that the MR film is disposed over the entire region, that is, the other end of the MR film is projected from the region where the magnetic domain stabilizing material is provided, and one electrode is connected to the projected portion of the MR film. With the latter configuration, both the widths of the first electrode and the second electrode can be sufficiently secured, and thus the electrical connection between the MR film and the electrode can be sufficiently achieved.

However, when the end of the MR film projects from the region where the magnetic domain stabilizing material is provided, the projecting end cannot receive the bias magnetic field from the magnetic domain stabilizing material. Therefore, in the region where the end portion protruding from the region where the magnetic domain stabilizing material is provided in the MR film overlaps the electrode, a hard magnetic material film or an antiferromagnetic film is interposed between the MR film and the electrode. It is suitable. If the hard magnetic material film or the antiferromagnetic film that is interposed between the MR film and the electrode is magnetized so as to have a component parallel to the width direction of the MR film, the magnetization direction of the MR film in the overlapping region is strong. Due to the magnetic coupling, they are oriented in the same direction as the magnetization direction of the hard magnetic material film or antiferromagnetic film. And by doing this, MR
The magnetization distribution is stabilized in a single domain state in the entire region from one end to the other end in the longitudinal direction of the film, so that the magnetoresistive characteristics of the MR element can be stabilized.

In the present invention, the MR film is not necessarily limited to the single-layer structure, but may be a multi-layer structure such as a so-called spin valve film.

The MR element having the above structure is suitable for use in a vertical MR head. In this case, the above-mentioned MR element is sandwiched between magnetic shields so that the longitudinal direction of the soft magnetic material is perpendicular to the signal recording surface of the magnetic recording medium. Such a magnetic head is highly reliable in that Barkhausen noise is suppressed even if the output is increased or the track is narrowed.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of an MR element to which the present invention is applied will be described below in detail with reference to the drawings.

First Embodiment FIGS. 1 and 2 show an MR element 10 according to the present embodiment. As shown in FIG. 1, the MR element 10 includes a single-layer MR film 1 having a substantially rectangular shape in plan view and a first substantially rectangular planar shape disposed on both ends of the MR film 1 in the width direction. The magnetic domain stabilizing material 2 and the second magnetic domain stabilizing material 3 are provided. In addition, as shown in FIG.
A rear end electrode 4 connected to one end (herein referred to as a rear end for convenience) 1a in the longitudinal direction of the film 1 and the other end of the MR film 1 (herein referred to as a front end for convenience). ) 1b is connected to the tip electrode 5.

Here, in the MR film 1, the magnetization direction D _f is rotated by the external magnetic field Hext. Therefore,
In the MR element 10 described above, the external magnetic field Hext is detected by utilizing the resistance change of the MR film 1.
In this MR film 1, if the bias magnetic field from the first magnetic domain stabilizer 2 and the second magnetic domain stabilizer 3 is sufficiently large, the magnetization easy axis D _e is set in either direction it may also be, but here is formed so that the magnetization easy axis direction D _e is parallel to the width direction.

The first magnetic domain stabilizing material 2 is a laminated body of a first soft magnetic material film 6 and a first hard magnetic material film 7 which is provided receding from the first soft magnetic material film 6, and the second magnetic domain stabilizing material is formed. The material 3 is the second soft magnetic material film 8 and the second soft magnetic material film 8
Of the hard magnetic material film 9. These magnetic domain stabilizers 2 and 3 control the magnetization direction D _f of the MR film 1 by generating a bias magnetic field having a component parallel to the width direction of the MR film 1. Here, the magnetization direction D _p of the magnetic domain stabilizers 2 and 3 is parallel to the width direction of the MR film 1.

Specifically, by setting the magnetization directions of the hard magnetic material films 7 and 9 in parallel with the width direction of the MR film 1, the soft magnetic material films in the regions overlapping the hard magnetic material films 7 and 9 are formed. 6 and 7 are ferromagnetically coupled to the hard magnetic material films 7 and 9 and oriented in the same direction as the magnetization direction of the hard magnetic material films 7 and 9. Then, the magnetization directions of the soft magnetic material films 6 and 8 in the regions which do not overlap with the hard magnetic material films 7 and 9 also face the same direction, and the magnetic domain stabilizing materials 2 and 3 as a whole are
A bias magnetic field parallel to the width direction of the MR film 1 is generated.

The first magnetic domain stabilizing material 2 and the second magnetic domain stabilizing material 3 are formed on both sides of the MR film 1 in the width direction.
It may be arranged at any position as long as it is arranged symmetrically with respect to the center line parallel to the longitudinal direction of the. Here, the first magnetic domain stabilizing material 2 and the second magnetic domain stabilizing material 3 are arranged in the entire region from the rear end portion 1a to the front end portion 1b of the MR film 1.

The magnetic domain stabilizers 2 and 3 are provided in non-contact with the MR film 1 in order to ensure electrical insulation from the MR film 1. However, since the magnitude of the bias magnetic field induced by the magnetic domain stabilizing materials 2 and 3 is inversely proportional to the cube of the distance, the distance between the MR film 1 and the magnetic domain stabilizing materials 2 and 3 is
It is better to be as small as possible to ensure insulation. Here, since the hard magnetic material films 7 and 9 are receded from the soft magnetic material films 6 and 8, the film thickness of the magnetic domain stabilizers 2 and 3 in the portion close to the MR film 1 can be reduced, so that the MR The probability of short circuit between the film 1 and the magnetic domain stabilizing materials 2 and 3 is reduced.

The rear end electrode 4 and the front end electrode 5 have a sense current i in the MR film 1 from the rear end electrode 4 toward the front end electrode 5.
In order to flow the magnetic field, the MR film 1 is provided so as to overlap the longitudinal end portions 1a and 1b of the MR film 1. However, the electrode 4,
Since current loss occurs when both 5 are in contact with the magnetic domain stabilizing materials 2 and 3 as described above, at least one of the electrodes 4 and 5 needs to be in non-contact with the magnetic domain stabilizing materials 2 and 3. is there. Therefore, here, the rear end electrode 4 has a width narrower than the width W of the MR film 1 and extends in the longitudinal direction of the MR film 1 so as not to overlap the magnetic domain stabilizing materials 2 and 3. On the other hand, the tip electrode 5 has a width M much wider than the width W of the MR film 1,
It is formed so as to overlap the tip portion 1b of the R film 1 and the magnetic domain stabilizing materials 2 and 3, respectively.

Any conventionally known soft magnetic material can be used as the material forming the MR film 1 described above, and examples thereof include NiFe, NiFeCo, and permalloy alloy: Ni.
Fe-X (X = Ta, Cr, Nb, Rh, Zr, Mo,
Plural kinds of these elements may be contained as X such as Al, Au, Pd, Pt, and Si. ), CoZr-based amorphous and the like. Further, as the rear end electrode 4 and the front end electrode 5, a non-magnetic metal material having electric conductivity such as Ta, Mo, W, Cr, Cu is used.

On the other hand, the magnetic domain stabilizers 2 and 3 are made of a laminated body of the soft magnetic material films 6 and 8 and the hard magnetic material films 7 and 9 as described above. Is CoP
A film made of t, CoNiPt, CoCrTa, or the like can be used. As the soft magnetic material films 6 and 8, the same material as the MR film 1 described above can be used. The soft magnetic material films 6 and 8 in the magnetic domain stabilizing materials 2 and 3 may be made of a material different from that of the MR film 1. However, in the present embodiment, they are integrally made of a common material. Has been formed.

In the MR element 10 according to the present embodiment having the above-mentioned structure, the magnetic domain stabilizing materials 2, 3 are formed even if the width W of the MR film 1 is narrowed or the thickness d is thinned. The magnetic field D _f of the MR film 1 overcomes the magnetostatic anisotropy in the longitudinal direction and is oriented in the width direction, that is, the easy axis direction D _e .

Therefore, the sense current i is applied between the electrodes 4 and 5.
When the external magnetic field Hext is applied from the side of the tip portion 1b of the MR film 1 in the flowing state, the resistance change of the MR film 1 occurs, and the external magnetic field Hext can be detected as the voltage change between the electrodes 4 and 5. Moreover, since the cross-sectional area of the MR film 1 can be reduced, it is possible to achieve high output.

Furthermore, the MR element 10 according to the present embodiment.
In the above, since the rear end electrode 4 of the electrodes 4 and 5 is not in contact with the magnetic domain stabilizing materials 2 and 3, current loss is also suppressed.

Here, a method of manufacturing the MR element 10 having the above structure will be described with reference to FIGS.

First, as shown in FIG. 3, a soft magnetic material for forming the MR film 1 and the soft magnetic material films 6 and 8 in the magnetic domain stabilizing materials 2 and 3 on a substrate 11 made of a non-magnetic material. The layer 12 is formed, and then the protective layer 13 made of a nonmagnetic material is formed. Then, a resist pattern (not shown) having a desired shape is formed by photolithography,
Using this resist pattern as a mask, the protective layer 13 and the soft magnetic material layer 12 are etched, and as shown in FIG. 4, the MR film 1 having a substantially rectangular plane and the MR films 1 on both sides in the width direction of the MR film 1. The soft magnetic material films 6 and 8 having a substantially rectangular plane are provided at a position separated from the film 1 by a predetermined distance.

Then, by photolithography, M
A resist pattern 14 that covers a part of the R film 1 and the soft magnetic material films 6 and 8 is formed, and etching is performed using this resist pattern as a mask, as shown in FIG.
The protective layer 13 on the soft magnetic material films 6 and 8 is selectively removed. Then, as shown in FIG. 6, the hard magnetic material films 7 and 9 in the magnetic domain stabilizing materials 2 and 3 are left in the state where the resist pattern 14 used as the mask is left as it is.
After the hard magnetic material layer 15 for forming is formed, the resist pattern 14 is removed to lift off the hard magnetic material layer 15 deposited on the resist pattern 14. Thereby, as shown in FIG.
The hard magnetic material layer 15 can be formed only in the removed region of 3, and the hard magnetic material films 7 and 9 recessed from the soft magnetic material films 6 and 8 are provided.

Although not shown, when forming the rear electrode 4 and the front electrode 5, a protective layer is formed by etching after forming a resist pattern so that the protective layer 13 in the formation region of these electrodes 4 and 5 is exposed. 13 is removed. Subsequently, after forming a conductor layer for forming the electrodes 4 and 5, the above-mentioned resist pattern may be removed to lift off the conductor layer deposited on the resist pattern. Thereby, the electrodes 4 and 5 having a desired pattern can be connected to the MR film 1.

In the MR element 10 according to the present embodiment, the soft magnetic material films 6 and 8 in the magnetic domain stabilizing materials 2 and 3 and the MR film 1 are made of a common material. The magnetic material films 6 and 8 and the MR film 1 can be integrally formed. Therefore, in the MR element 10 according to the present embodiment, the manufacturing process can be simplified and the productivity can be improved.

When manufacturing the MR element 10 according to this embodiment, as described above, as shown in FIG.
The hard magnetic material layer 15 is formed using the resist pattern 14 that covers a part of the MR film 1 and the soft magnetic material films 6 and 8 as a mask, whereby the hard magnetic material film 7 in the magnetic domain stabilizing materials 2 and 3 is formed. 9 is set back from the soft magnetic material films 6 and 8. By doing so, as compared with the case where the hard magnetic material films 7 and 9 are provided in the same range as the soft magnetic material films 6 and 8, the patterning for forming the resist pattern 14 can be performed roughly, and the hard magnetic material film 7 can be formed. , 9 and the MR film 1 can be greatly reduced.

Second Embodiment This embodiment shows a structure capable of giving a more stable bias magnetic field to the MR film.

FIG. 8 shows an MR element 20 according to this embodiment. This MR element 20 is also similar to the first embodiment.
Magnetic domain stabilizers 2 and 3 are formed on both sides of the single-layer MR film 1 in the width direction.
However, the soft magnetic material films 6 and 8 of the magnetic domain stabilizing materials 2 and 3 are formed so as to be connected to each other at a position retracted from the MR film 1 to form a closed magnetic path. This is different from the first embodiment.

That is, in the region adjacent to the MR film 1, the magnetic domain stabilizing materials 2 and 3 are the same as in the first embodiment.
The MR film 1 is composed of a laminated body of the first soft magnetic material film 6 and the first hard magnetic material film 7 and a laminated body of the second soft magnetic material film 8 and the second hard magnetic material film 9. At the position retracted from the first soft magnetic material film 6 and the second soft magnetic material film 8
Only the ends are extended and routed so that their ends are connected. As a result, a closed magnetic circuit made of a soft magnetic material is formed so as to sandwich the MR film 1.

The materials forming the hard magnetic material films 7 and 9 and the electrodes 4 and 5 in the MR film 1 and the magnetic domain stabilizing materials 2 and 3 may be the same as those in the first embodiment.

In the MR element 20 according to the present embodiment having the above-mentioned structure, a more uniform and more stable bias magnetic field is given to the MR film 1, so that M
The magnetization direction D _f of the R film 1 is more favorably controlled, and more stable magnetoresistive characteristics can be obtained as compared with the MR element 10 shown in the first embodiment.

Third Embodiment In this embodiment, a structure is shown in which the reliability of electrical connection between the MR element 1 and the electrodes 4 and 5 can be improved.

FIG. 9 shows an MR element 30 according to this embodiment. This MR element 30 is also the same as in the first embodiment.
Magnetic domain stabilizers 2 and 3 are formed on both sides of the single-layer MR film 1 in the width direction.
And the electrodes 4 and 5 are provided at both ends 1a and 1b in the longitudinal direction of the MR film 1. However, in the MR element 30 according to the present embodiment, the magnetic domain stabilizing materials 2 and 3 are
This is different from the first embodiment in that the membrane 1 is separated at a midway portion in the longitudinal direction.

That is, the first magnetic domain stabilizing material 2 is the MR film 1
The first rear end side magnetic domain stabilizing material 22 provided on the rear end electrode 4 side and the first front end side magnetic domain stabilizing material 32 provided on the front end electrode 5 side. The second magnetic domain stabilizing material 3 is provided on the side of the MR film 1 which is the second magnetic domain stabilizing material 23 on the rear end side provided on the side of the rear end electrode 4 and on the side of the tip electrode 5. It is composed of the second tip side magnetic domain stabilizing material 33. Here, the first rear end side magnetic domain stabilizing material 22 is MR
It is provided on the first rear end side soft magnetic material film 26 having a planar triangular shape, the width of which becomes narrower as it goes away from the film 1, and on the narrower region of the first rear end side soft magnetic material film 26. , And a first rear end side hard magnetic material film 27 having a flat rectangular shape. Further, the first front-end magnetic domain stabilizing material 32, the second rear-end magnetic domain stabilizing material 23, and the second front-end magnetic domain stabilizing material 33 also have soft magnetic material films 36, 28 having the same shape. 38 and hard magnetic material films 37, 29, 39.

Further, in the present embodiment, the rear end electrode 4 is arranged in a width much wider than the width W of the MR film 1 so as to overlap with the magnetic domain stabilizing members 22 and 23, like the front end electrode 5. Has been done.

The materials forming the MR film 1, the magnetic domain stabilizing materials 2 and 3 and the electrodes 4 and 5 may be the same as those in the first embodiment.

In the MR element 30 according to the present embodiment having the above-described structure, since the width of the rear end electrode 4 is wide, the electrical connection between the MR film 1 and the rear end electrode 4 is ensured. Further, a large patterning margin can be secured as compared with the case where the narrow rear end electrode 4 is formed so as not to contact the magnetic domain stabilizing materials 2 and 3. With such a configuration, each of the electrodes 4 and 5 comes into contact with the magnetic domain stabilizing materials 2 and 3, but in the present embodiment, the magnetic domain stabilizing materials 2 and 3 are separated at a midway portion thereof. Therefore, no loss occurs in the sense current i supplied to the MR film 1.

Also in the MR element 30 according to the present embodiment, since the magnetization direction D _f of the MR film 1 is controlled by the bias magnetic field of the magnetic domain stabilizing materials 2 and 3, stable magnetoresistive characteristics can be obtained. .

Fourth Embodiment This embodiment also shows a structure capable of increasing the reliability of the electrical connection between the MR element 1 and the electrodes 4, 5.

FIG. 10 shows an MR element 40 according to this embodiment.
Is shown. In this MR element 40 as well, as in the first embodiment, the magnetic domain stabilizing materials 2 and 3 are disposed on both widthwise end sides of the single-layer MR film 1, and the MR film 1 has both longitudinal end portions 1a. ,
1b is provided with electrodes 4 and 5. However, in the MR element 40 according to the present embodiment, the rear end portion 1a of the MR film 1 is
Is protruded from the region where the magnetic domain stabilizers 2 and 3 are arranged, and the rear end electrode 4 is connected to this protrusion, which is different from the first embodiment.

That is, in the MR element 40 according to the present embodiment, the magnetic domain stabilizing materials 2 and 3 are provided from the longitudinal end portion of the MR film 1 to the midway portion thereof.
The rear end portion 1a of the MR film 1 projects from the area where the magnetic domain stabilizing materials 2 and 3 are provided. And this MR
A rear end electrode 4 having a width wider than the width W of the MR film 1 is provided on the protruding portion of the film 1.

However, when forming the rear end electrode 4, a hard magnetic material film or an antiferromagnetic film (not shown) is provided in advance, and the hard magnetic material film is formed between the MR film 1 and the rear end electrode 4. Alternatively, an antiferromagnetic film is interposed. Here, this hard magnetic material film or antiferromagnetic film is
It is magnetized in parallel with the width direction of the MR film 1. As a result, the MR film 1 in the region overlapping with the hard magnetic material film or the antiferromagnetic film is oriented in the same direction as the magnetization direction of the hard magnetic material film or the antiferromagnetic film by ferromagnetic coupling.

The materials forming the MR film 1, the magnetic domain stabilizing materials 2 and 3 and the electrodes 4 and 5 may be the same as those in the first embodiment. As the antiferromagnetic material film, FeMn, NiMn, N
A film made of iO, NiCoO or the like can be used.

In the MR element 40 according to the present embodiment having the above-described structure, since the width of the rear end electrode 4 is wide, the electrical connection between the MR film 1 and the rear end electrode 4 is ensured. Further, in the present embodiment, since the rear end portion 1a side of the MR film 1 projects beyond the region where the magnetic domain stabilizing materials 2 and 3 are arranged, even if the rear end electrode 4 has a large width, Electrode 4
Can be brought into non-contact with the magnetic domain stabilizing materials 2 and 3, and
It is not necessary to cause a loss in the sense current i supplied to the film 1.

Further, in the MR element 40 according to the present embodiment, in the region where the magnetic domain stabilizing materials 2 and 3 are arranged, the bias magnetic field from the magnetic domain stabilizing materials 2 and 3 causes the MR film 1 to move. Even in the region where the magnetization direction D _f is controlled and the magnetic domain stabilizing materials 2 and 3 are not provided, in the region overlapping the rear end electrode 4, the hard magnetic material film or the anti-reflective film provided under the rear end electrode 4 is formed. The magnetization direction D _f of the MR film 1 is controlled by the ferromagnetic coupling with the magnetic film. Therefore, the magnetization distribution is stabilized in a single domain state in most of the region from the front end 1b to the rear end 1a of the MR film 1 in the longitudinal direction, and the magnetoresistive characteristics of the MR element 40 are stable.

Fifth Embodiment Here, an example in which the MR element 10 shown in the first embodiment is applied to a vertical MR head will be described with reference to FIG.

In this vertical MR head 50, the MR element 10 as shown in FIGS. 1 and 2 is used as the lower magnetic shield 2.
1 and the upper magnetic shield 22. The upper magnetic shield 22 is connected to the tip electrode 5 of the MR element 10, bends near the surface 50a facing the magnetic recording medium, and extends from the upper side toward the rear end electrode 4 side. The upper magnetic shield 22 is made of a conductive material and also serves as a lead portion of the tip electrode 5. The distance between the tips of the upper magnetic shield 22 and the lower magnetic shield 21 is the magnetic gap g.

In the vertical MR head 50, the longitudinal direction of the MR film 1 is perpendicular to the signal recording surface of the magnetic recording medium, and the tip portion 1b of the MR film 1 is formed.
So that it is on the side facing the magnetic recording medium.
0 is allocated. Further, in the vertical MR head 50, the MR film 1 is formed above the magnetic sensitive portion.
Bias conductors 23 are arranged so as to be orthogonal to. The bias conductor 23 applies a bias magnetic field to the MR film 1 to increase the linearity of the detection signal.

The vertical MR having the above-mentioned structure
Head is made is placed on the slider 24 made of a nonmagnetic material such as Al ₂ 0 ₃ -TiC, The protective film 25 is provided on the upper magnetic shield 22.

The vertical MR head 50 having the above-described configuration detects the signal magnetic field (external magnetic field Hext) from the magnetic recording medium by utilizing the fact that the MR element 10 causes a resistance change due to the external magnetic field Hext. be able to.

In the magnetic head 50, the MR film 1 is actually affected by the signal magnetic field (external magnetic field Hext) from the front end facing the surface 50a facing the magnetic recording medium to the magnetic field rearward. It is up to a length corresponding to the gap g. On the other hand, the MR used here
In the element 10, the magnetic domain stabilizing materials 2 and 3 are arranged in the entire region of the MR film 1 in the longitudinal direction, and the signal magnetic field (external magnetic field Hext
In the region affected by (1), the magnetization direction D _f of the MR film 1 is sufficiently controlled. Therefore, this MR element 1
The magnetic head 50 to which 0 is applied can perform good reproduction without generating Barkhausen noise.

Although the MR element to which the present invention is applied has been described above, it goes without saying that the present invention is not limited to the above-described embodiments. For example, in each of the above-described embodiments, the hard magnetic material films 7 and 9 are laminated on the soft magnetic material films 6 and 8 to form the magnetic domain stabilizing material, but as shown in FIG. The hard magnetic material films 7 and 9 may be provided below the soft magnetic material films 6 and 8.

The MR film 1 may not be a single layer but may be a multi-layer film having a so-called spin valve structure or the like. A multilayer film having a spin valve structure or the like is, for example, a base layer, a magnetization rotation layer, a nonmagnetic conductor layer, a magnetization fixed layer, and an antiferromagnetic layer laminated in this order on a substrate. , T
a, Ti, Hf, etc. can be used, and as the magnetization rotation layer, any of the materials mentioned as the material of the single-layer MR film 1 in the first embodiment can be used. As a non-magnetic conductor layer, C
u, CuNi, CuAg, etc. can be used, and as the magnetization fixed layer, NiFe, NiFeCo, Co, CoFe, Co can be used.
Ni or the like can be used. Further, as the antiferromagnetic layer, Fe
Mn, CrMnPt, NiO, NiCoO, etc. can be used.

Further, as a method of manufacturing an MR element to which the present invention is applied, in the first embodiment, the MR film 1 and the soft magnetic material films 6 and 8 of the magnetic domain stabilizing materials 2 and 3 are simultaneously formed. However, the present invention is not limited to this. For example, first, as shown in FIG. 13, the MR film 1 is formed on the substrate 11.
To form a soft magnetic material layer 12 for forming
A protective layer 13 made of a non-magnetic material is formed, and a resist pattern 16 is formed by photolithography. Then, as shown in FIG. 14, the resist pattern 16 is left after the protective layer 13, the soft magnetic material layer 12 and the substrate 1 are collectively etched up to the middle of the thickness direction using the resist pattern as a mask. In this state, the soft magnetic material layer 17 for forming the soft magnetic material films 6 and 8 in the magnetic domain stabilizing materials 2 and 3 is formed. Then, the resist pattern 16 is removed to lift off the soft magnetic material layer 17 deposited on the resist pattern 16, and as shown in FIG. 15, the magnetic domain stabilizing material 2 is formed in the removed region of the substrate 11. Soft magnetic material film 6 in 3,
8 are formed.

Next, as shown in FIG. 16, by photolithography, the MR film 1 and the soft magnetic material film 6,
A resist pattern 18 is formed to cover a part of the magnetic field stabilizing materials 2 and 3, and the hard magnetic material films 7 and 9 in the magnetic domain stabilizing materials 2 and 3 are formed.
A hard magnetic material layer 19 for forming is formed. Then, the hard magnetic material layer 1 deposited on the resist pattern 18 is removed by removing the resist pattern 18.
Lift off 9. As a result, as shown in FIG. 17, the hard magnetic material films 7 and 9 recessed from the soft magnetic material films 6 and 8 are provided.

The rear end electrode 4 and the front end electrode 5 may be formed in the same manner as described in the first embodiment.

In addition, in the fifth embodiment, the magnetic head is constructed by using the MR element 10 according to the first embodiment, but the MR element 20 shown in the second to fourth embodiments. , 30, 40, etc. may be applied to form a magnetic head, and this also provides a magnetic head capable of excellently reproducing a signal magnetic field.

[0076]

As is apparent from the above description, when the present invention is applied, the magnetic domain can be appropriately controlled even if the width and thickness of the MR film are reduced.
Therefore, the MR element according to the present invention can achieve excellent output while achieving excellent magnetoresistive characteristics.

If this MR element is applied to a magnetic head, a high output can be obtained, the track can be narrowed, and the Barkhausen noise can be suppressed from occurring, and good reproduction can be performed.

[Brief description of drawings]

1A and 1B are a top view and a cross-sectional view of a main part of a configuration example of an MR element according to the present invention.

FIG. 2 is a schematic diagram showing the positional relationship between the soft magnetic material, the magnetic domain stabilizing material and the electrodes in the MR element of FIG. 1 from the upper surface side.

FIG. 3 is a schematic cross-sectional view showing a manufacturing process of the MR element of FIGS. 1 and 2, showing a state in which a soft magnetic material layer and a protective layer are provided on a substrate.

FIG. 4 is a schematic cross-sectional view showing a state in which the soft magnetic material layer and the protective layer of FIG. 3 are patterned.

FIG. 5 shows a resist pattern formed on the protective layer of FIG.
It is a typical sectional view showing the state where etching was performed using this as a mask.

6 is a schematic cross-sectional view showing a state in which a hard magnetic material layer is formed with the resist pattern of FIG. 5 left.

FIG. 7 is a schematic cross-sectional view showing a state where the resist pattern of FIG. 6 is removed and the hard magnetic material layer on the resist pattern is lifted off.

FIG. 8 is a top view showing a main part of another configuration example of the MR element according to the present invention.

FIG. 9 is a top view showing still another configuration example of the MR element according to the present invention.

FIG. 10 is a top view showing still another configuration example of the MR element according to the present invention.

FIG. 11 is a schematic sectional view showing a magnetic head to which the MR element according to the present invention is applied.

FIG. 12 is a cross-sectional view showing still another configuration example of the MR element according to the present invention.

FIG. 13 is a schematic cross-sectional view showing a step of manufacturing an MR element, showing a state in which a soft magnetic material layer and a protective layer are provided on a substrate, and a resist pattern is formed on the soft magnetic material layer and the protective layer.

FIG. 14 is a schematic cross-sectional view showing a state where a soft magnetic material layer is further formed by performing etching using the resist pattern of FIG. 13 as a mask.

FIG. 15 is a schematic cross-sectional view showing a state in which the resist pattern of FIG. 14 is removed and the soft magnetic material layer on the resist pattern is lifted off.

16 is a schematic cross-sectional view showing a state in which a resist pattern covering a part of the MR film and the soft magnetic material film of FIG. 15 is formed, and then a hard magnetic material layer is formed.

FIG. 17 is a schematic cross-sectional view showing a state where the resist pattern of FIG. 16 is removed and the hard magnetic material layer on the resist pattern is lifted off.

FIG. 18 is a perspective view showing a main part of a configuration example of a conventional MR element.

FIG. 19 is a schematic diagram showing a magnetic domain structure of a ferromagnetic material.

FIG. 20 is a perspective view showing a main part of another configuration example of a conventional MR element.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 MR film, 2 1st magnetic domain stabilizing material, 3 2nd magnetic domain stabilizing material, 4 rear end electrode, 5 front electrode, _De
Easy axis of magnetization, D _f Magnetization direction of soft magnetic material, D
Magnetization direction of _p domain stabilizer

Claims (7)

[Claims] 1. A magnetoresistive effect film having a substantially rectangular plane, a first electrode connected to one longitudinal end of the magnetoresistive effect film, and a first electrode connected to the other end of the magnetoresistive effect film. A magnetoresistive effect element including two electrodes, a soft magnetic material film and a hard magnetic material film receding from the magnetoresistive effect film on both ends in the width direction of the magnetoresistive effect film. A magnetic domain stabilizing material is laminated, and the magnetic domain stabilizing material is configured to generate a bias magnetic field having a component parallel to the width direction of the magnetoresistive effect film. Magnetoresistive element. 2. The magnetoresistive effect element according to claim 1, wherein the magnetoresistive effect film and the soft magnetic material film are made of a common material. 3. The magnetoresistive effect element according to claim 1, wherein the soft magnetic material films are connected to each other at a position receding from the magnetoresistive effect film to form a closed magnetic circuit. 4. The magnetoresistive effect according to claim 1, wherein the magnetic domain stabilizing material is separated at least at one place from one end to the other end in the longitudinal direction of the magnetoresistive effect film. element. 5. In a region where the magnetoresistive effect film and the electrode overlap, at least one of the first electrode and the second electrode has a hard layer between the magnetoresistive effect film and the electrode. The magnetoresistive effect element according to claim 1, wherein a magnetic material film or an antiferromagnetic film is interposed. 6. The magnetoresistive effect element according to claim 1, wherein the magnetoresistive effect film has a multilayer structure. 7. A magnetic head is formed by being sandwiched between magnetic shields, and is used such that the longitudinal direction of the magnetoresistive film is perpendicular to the signal recording surface of the magnetic recording medium. The magnetoresistive effect element according to claim 1.