JPH09260555A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which relaxes the thermal stress applied to semiconductor elements. SOLUTION: Space 7a is brought into existence by being surrounded by a die pad 4 a lid 3, and a substrate 7. An IC1 is fixed to the surface of the die pad 4 by a die bond material 6. A heat radiation fin 9 is provided on the other surface of the die pad 4. An electrode bump 8 is installed on the lid 3. A fine line 2a in the shape of a metal wool is installed as a heat conductive structure 22. The fall of the fine line 2a is prevented by resin 2b. The fine line 2a abuts on an IC1, and it is fixed to the lid 3 by a connection layer 2e, so the lid 3 and IC1 are connected thermally. Since the fine line 2a consisting of metal has elasticity, even if IC1 and the fine line 2a expand severally with each different expansion coefficient, the surface of the IC1 is not restricted by the fine line 2a being transformed, so thermal stress is lightened. The heat of the IC1 is abandoned to the outside through the lid 3 and an electrode bump 8.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a BGA (Ball Grid).
The present invention relates to a cavity type semiconductor device represented by an Array structure. More particularly, the present invention relates to a semiconductor device including an IC including a memory, a logic circuit, and the like, and suppressing deterioration in reliability due to heat generation from the IC.

[0002]

2. Description of the Related Art FIG. 11 is a schematic view showing a structure of a semiconductor device 100 provided with a conventional heat conducting structure 102. The semiconductor device 100 is disclosed in Japanese Patent Laid-Open No. 4-58550.

The semiconductor device 100 has a BGA structure. The IC 1 made mainly of silicon has an active portion 1a which is a main heat source. In order to thermally couple the surface of the IC 1 provided with the active portion 1a and the lid 103, the heat conducting structure 102 is provided in the semiconductor device 100. The heat conducting structure 102 is in contact with the active part 1a and is fixed to the lid 103 by the heat conducting structure connecting layer 2e. The heat removed from the active portion 1 by the heat conducting structure 102 is the radiation fin 1 formed integrally with the lid 103.
Emitted from 09.

[0004]

In the semiconductor device 100, there is a difference in the coefficient of thermal expansion between the heat conducting structure 102 and the IC1. Due to this difference in the coefficient of thermal expansion, the surface of the IC 1 and the surface of the heat conductive structure 102 are constrained to each other, and thermal stress is generated. Therefore, since the heat conducting structure 102 is in contact with the active portion 1a, the IC
The surface of No. 1 is pulled by the heat conducting structure 102, I
C1 is destroyed. This causes a problem that the reliability of the semiconductor device 100 is significantly reduced.

Further, the IC 1 and the heat conducting structure 102 expand in the longitudinal direction in FIG.
C1 receives a drag force from the heat conducting structure 102. Since the IC1 is also destroyed by this drag force, the semiconductor device 1
00 has decreased in reliability.

Since the degree of integration of the IC is improved with time, it is expected that the power consumption of the IC will increase as the capacity increases. Therefore, it can be expected that the demand for a semiconductor device having a structure that efficiently radiates heat without destroying the IC will increase.

In view of the above points, it is an object of the present invention to provide a semiconductor device having a heat conductive structure having a structure for removing heat from the surface of the IC1 and relaxing thermal stress and drag applied to the semiconductor element. To do.

[0008]

A semiconductor device according to a first aspect of the present invention has a semiconductor element and an abutting end that abuts against a part of the semiconductor element, and heat from the semiconductor element is abutted through the abutting end. The heat conductor includes a heat conductor that conducts heat and a heat radiator that radiates the heat conducted by the heat conductor. The heat conductor is deformable at least at the contact end.

A semiconductor device according to a second aspect is the semiconductor device according to the first aspect.
The heat conductor includes a material having elasticity at least at a contact end.

A semiconductor device according to a third aspect is the semiconductor device according to the second aspect.
The semiconductor device according to Item 1, wherein the abutting end includes a linear portion.

A semiconductor device according to a fourth aspect is the semiconductor device according to the third aspect.
The semiconductor device according to Item 1, wherein the tip of the linear portion includes a sphere that abuts the semiconductor element.

A semiconductor device according to a fifth aspect is the semiconductor device according to the second aspect.
In the semiconductor device according to the item 1, the heat conductor is bent at the contact end.

A semiconductor device according to a sixth aspect is the semiconductor device according to the fifth aspect.
In the semiconductor device described in (1), a slit is formed in the heat conductor at the contact end.

A semiconductor device according to a seventh aspect is the semiconductor device according to the second aspect.
The semiconductor device according to Item 1, further comprising a coating material that covers at least a part of the heat conductor while being separated from the semiconductor element.

A semiconductor device according to claim 8 is the semiconductor device according to claim 7.
The semiconductor device according to 1 above, wherein the heat conductor includes a plurality of heat conductive pieces.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1. An embodiment of the present invention will be described below. FIG. 1 shows a heat conducting structure 22 composed of thin wires 2a.
3 is a schematic view illustrating the structure of a semiconductor device 20 provided in FIG.

First, an outline of the structure of the semiconductor device 20 will be described. The semiconductor device 20 of FIG. 1 has a BGA structure. A substrate 7 is arranged between the die pad 4 and the lid 3. A space 7a is formed in the center by being surrounded by the lid 3, the die pad 4, and the substrate 7. On the surface of the die pad 4 facing the space 7a, the IC
1 is fixed by the die bond material 6. The IC 1 is fixed on the die pad 4 so that the active portion 1a provided in the IC 1 is on the space 7a side. A radiation fin 9 is provided on the surface of the die pad 4 that does not face the space 7a. The radiating fin 9 receives the I transmitted from the die pad 4.
It is provided to dissipate the heat generated by C1.

The IC 1 and the substrate 7 are connected by a wiring wire 5. Electrode bumps 8 arranged on the lid 3,
The connection with the active portion 1a is through the wiring wire 5 and the substrate 7. When the semiconductor device 20 is used, the electrode bumps 8 are connected to a power supply means (not shown).

Next, the heat conducting structure 2 according to the present embodiment
The structure related to 2 will be described. Active part 1 of IC1
In order to remove the heat generated by a, the heat conducting structure 2 made of metal wool-like fine wires 2a connecting the lid 3 and the IC1.
2 is provided in the semiconductor device 20. The thin wire 2a is in contact with the active portion 1a at a number of locations and is fixed to the surface of the lid 3 on the side of the space 7a by the heat conduction structure connecting layer 2e which is a brazing material. In order to efficiently dissipate heat, a material made of a metal having a high thermal conductivity such as Au, Ag, Cu, Al or the like can be used as the thin wire 2a.

Since the fine wire 2a is made of a material such as the metal mentioned above, the thin wire 2a has elasticity, which causes the thin wire 2a to be flexible, that is, deformable. Therefore, even if the active portion 1a and the thin wire 2a expand at different expansion rates due to heat generated from the active portion 1a, the deformation of the surface of the IC1 is not restricted by the thin wire 2a due to the deformation of the thin wire 2a. The thermal stress to be applied to is relaxed.

Even if the IC 1 and the thin wire 2a expand in the vertical direction in FIG. 1, the thin wire 2a is deformed, so that the IC
The drag applied to 1 is alleviated.

The heat of the IC 1 received by the heat conducting structure 22 is transferred to the electrode bumps 8 via the lid 3, and is applied from the electrode bumps 8 to a power supply means (not shown). That is, the heat generated from the IC 1 is dissipated to the outside of the semiconductor device 20. Therefore, by the heat conducting structure 22, I
It is possible to release IC1 from thermal stress while drawing heat from C1.

Next, the heat conducting structure 22 and the semiconductor device 2
Each manufacturing method of No. 0 will be described in order. First, the heat conducting structure 22 is formed by forming metal wool using the thin wire 2a having a circular or rectangular cross section.
Get. At this time, the size of the metal wool is adjusted so that the thin wire 2a contacts the IC 1 when the lid 3 is mounted on the substrate 7. Next, as a manufacturing process of the semiconductor device 20, metal wool is fixed to the surface of the lid 3 that faces the IC 1 by using the heat conduction structure connection layer 2e. Already IC
The semiconductor device 20 can be obtained by mounting the lid 3 on the substrate 7 on which 1 and the like have been arranged in the same mounting step as the conventional one.

In the case of the thin wire 2a having a circular cross section, it is preferable to reduce the diameter of the thin wire 2a to, for example, about several tens of μm in order to perform efficient heat conduction and effective relaxation of thermal stress.

Further, in order to form the thin wire 2a, the thin wire 2a is formed.
When injecting the metal used as the material, the heat conducting structure 22 may be obtained by forming the thin wire 2a into a metal wool shape. At this time, the ejection is performed by the lid 3 provided with the heat conductive structure connecting layer 2e.
It may be carried out directly on the surface of, or may be carried out on a plate prepared separately from the lid 3. In the latter case, the metal wool-like thin wire 2a solidified on the plate is fixed on the lid 3 by the heat conduction structure connecting layer 2e.

Further, the heat conduction structure 22 may be formed by forming a fine grid-like metal pattern by plating and preparing a plurality of metal patterns and arranging them in layers.
This makes it possible to form the metal wool-like thin wire 2a in a pseudo manner. Further, only one metal pattern may be used. In this case, the heat conducting structure 22 does not have a metal wool shape. However, it is of course possible to relieve the thermal stress by the elasticity of the metal pattern.

In the present embodiment, in addition to the metal materials described above, a material having similar thermal conductivity and elasticity can be used as the thin wire 2a.

It is also possible to melt the portion of the thin wire 2a that comes into contact with the IC1 by electric discharge or heating, and solidify the melted tip in a spherical shape. FIG. 2 is a schematic diagram illustrating a plurality of thin wires 2a having a spherical tip, which are in contact with the IC 1. In the figure, the thin wire 2a is in contact with the IC1 at various angles. However, since the tip of the thin wire 2a that contacts the IC1 is spherical, the contact state between the thin wire 2a and the IC1 is uniform in any thin wire 2a. That is,
By making the tip of the thin wire 2a spherical, it is possible to ensure uniformity in the contact portion.

In order to bring the tips of the thin wires 2a into contact with the IC 1, for example, the following method may be used. First, a metal wool-like thin wire 2a is prepared. The thin wire 2a is brought into contact with the heating means having a flat surface, and the abutting portion is melted. Next, the thin wire 2a is separated from the heating means to solidify the melted portion into a spherical shape. According to the above method, since the tips of the thin wires 2a exist on a certain plane, the tips of the respective thin wires 2a can come into contact with the IC1.

In order to prevent the thin wire 2a from falling off from the metal wool-like heat conducting structure 22, the heat conducting structure 22 may be impregnated with the resin 2b or the like as shown in FIG. Thereby, the shape of the heat conducting structure 22 is maintained. At this time, the resin 2b must be adjusted to a thickness such that the resin 2b does not reach the IC1 so as not to hinder the deformation of the thin wire 2a in the portion contacting the IC1.

Further, the thermal connection between the lid 3 and the heat conducting structure 22 may be via a substantially solid object. FIG. 4 is a schematic view illustrating the structure of the semiconductor device 20 in which the solid structure 2 f is sandwiched between the lid 3 and the heat conducting structure 22. At this time, the fixing of the lid 3 to the solid structure 2f and the fixing of the solid structure 2f to the heat conducting structure 22 are performed by the solid structure connecting layer 2g and the heat conducting structure which are brazing materials. And the body connecting layer 2e. Solid structure connecting layer 2g and heat conducting structure connecting layer 2e
May be supplied at the time of fixing, or may be previously supplied to the surfaces of the lid 3, the solid structure 2f and the thin wire 2a by a technique such as plating. As the material of the solid structure 2f, a material having good thermal conductivity such as a metal material such as Au, Ag, Cu, Al or a ceramic material such as AlN can be used.

Further, in this embodiment, the IC 1 is not covered and is arranged as a bare chip. But C
The semiconductor device 20 of the present embodiment is also effective when the IC 1 covered by a technique such as SP (Chip Size Package) is used.

As described above, the semiconductor device 20 having the structure of the present embodiment remarkably reduces the thermal stress and drag applied to the IC1, which is a problem when improving the heat dissipation from the active portion 1a side of the IC1. It becomes possible to do.
This avoids destruction of IC1. Moreover, the manufacturing process of the semiconductor device 20 is not obtained by largely changing the conventional manufacturing process. Therefore, by adopting the semiconductor device 20 of the present embodiment, it becomes possible to inexpensively supply a highly reliable semiconductor device.

Embodiment 2 Semiconductor device 30 according to the present embodiment will be described with reference to FIG. The semiconductor device 30 includes the heat conducting structure 22 included in the semiconductor device 20 according to the first embodiment, and the heat conducting structure 3 according to the present embodiment.
It is obtained by substituting 2. Therefore, the configuration of the semiconductor device 30 other than the portion related to the heat conduction structure 32 is the same as that of the semiconductor device 20. Therefore, the same components are designated by the same reference numerals and the description thereof will be omitted.

FIG. 5 is a schematic view illustrating the structure of the semiconductor device 30 provided with the heat conducting structure 32. The heat conducting structure 32 is fixed to the surface of the lid 3 facing the space 7a by the heat conducting structure connecting layer 2e. In the figure, the heat conducting structure 32 is composed of three plates 2c whose bent portions abut against the IC1. However, the number of plates 2c is not limited to three, and may be one or more, for example.

The plate 2c is made of a metal having high heat conductivity and elasticity, which is represented by Au, Ag, Cu, Al and the like. The heat conducting structure 32 including the plate 2c as described above can also obtain the same effect as that of the first embodiment.

Since the bent portion of the plate 2c, that is, the portion having the curvature abuts the IC1, the elasticity of the plate 2c allows the plate 2c to be suitably deformed. Therefore, as in the case of the first embodiment, even if heat is generated in the IC1, thermal deformations of the IC1 and the heat conducting structure 32 do not restrain each other at the portion where the IC1 and the heat conducting structure 32 contact each other. This makes it possible to remove heat from the IC1 while avoiding destruction of the IC1 due to thermal stress and drag.

The method of manufacturing the semiconductor device 30 is the same as the method of manufacturing the semiconductor device 20 of the first embodiment. That is, since the heat conducting structure 22 is merely replaced by the heat conducting structure 32, the semiconductor device 30 is manufactured in the same manufacturing process.
Can be manufactured. Therefore, the semiconductor device 30
Also in the manufacturing method of (1), the lid 3 can be attached as in the conventional case. As a result, the semiconductor device 30 of the present invention can be obtained without significantly changing the manufacturing process of the conventional semiconductor device.

In order to control the elasticity of the plate 2c, a slit 2h may be formed in the bent portion of the plate 2c. FIG. 6 is a schematic view illustrating the structure of the heat conduction structure 32 including the plate 2c having the slits 2h. In the figure, the plate 2c is shown in cross section. FIG. 7 is a perspective view illustrating the plate 2c provided with the slit 2h.

In FIG. 7, one plate 2c has one slit 2h, but a plurality of slits 2h may be provided.
By appropriately changing the size and the number of the slits 2h, the elasticity of the plate 2c can be adjusted without changing the thickness and the material. By controlling the elasticity of the plate 2c, it becomes possible to deal with various IC1.

Further, it is desirable that the portion of the plate 2c that abuts the IC 1 has a small curvature. The plate 2c having a small curvature is I
This is because heat is efficiently removed from C1.

Further, a metal plate formed by laminating a material having a large expansion coefficient represented by Cu or the like and a material having a small expansion coefficient represented by Mo or the like may be used as the plate 2c. FIG. 8 shows that Mo is formed between two layers of Cu.
It is sectional drawing which shows the board 2c which the layer which consists of is sandwiched. S
The expansion coefficients of i, Cu, and Mo are 2.42 × 10, respectively.
^-6 , 1.68 × 10 ^-6 and 5.5 × 10 ^-6 (° K ^-1 ), the expansion coefficient of the plate 2c can be adjusted by adjusting the thicknesses of Cu and Mo respectively. It is possible to approach the expansion rate. This makes it possible to reduce the thermal stress applied to the IC1.

Since the expansion coefficients of Cu and Mo are as described above, in order to make the expansion coefficient of IC1 and the expansion coefficient of the plate 2c close to each other, the thickness of Mo is relatively large with respect to the thickness of Cu. It has to be big. However, metals such as Mo having a relatively small expansion coefficient generally have low thermal conductivity. Therefore, by increasing the thickness of Mo, the plate 2c
The thermal conductivity of is reduced. Therefore, the thickness of Mo should be determined in consideration of the thermal conductivity and the expansion coefficient.

For example, when a metal plate consisting of one layer of Cu and one layer of Mo is used as the plate 2c, there is a difference between the respective expansion coefficients of Cu and Mo, so that when the plate 2c expands, It separates from IC1 or gives extra drag to IC1. Therefore, by sandwiching a layer made of Mo between layers made of Cu as shown in FIG. 8, the plate 2c has a vertically symmetrical structure. This makes it possible to suppress the warp of the plate 2c itself.

Further, the solid structure 2f shown in the first embodiment may be sandwiched between the lid 3 and the plate 2c. Lid 3
And the solid structure 2f and the solid structure and the plate 2c are respectively connected to the solid structure connecting layer 2 of the first embodiment.
g and the heat conducting structure connecting layer 2e.

Further, the constituents of the heat conducting structure 32 are not limited to the plate 2c only. FIG.
It is a schematic diagram which illustrates the structure of the semiconductor device 32 in which the spherical body 2i made of metal which abuts C1 is fixed to the lid 3.
The spherical body 2i has a shape in which a part of the sphere is cut and the cut portion forms a plane. Sphere 2
i has its own plane fixed to the lid 3. Sphere 2i
The lid 3 and the lid 3 are fixed by the heat conduction structure connecting layer 2e.

The shape of the spherical body 2i is not limited to a partially cut sphere. For example, a partially cut ellipsoid may be used as the spherical body 2i. That is, it is possible to use as the spherical body 2i an object having a desired shape, which has a curvature at the portion contacting the IC2.
Among the sphere and the ellipsoid, the ellipsoid has a portion having a smaller curvature. Since it is possible to reduce the curvature of the portion of the ellipsoid that is in contact with IC1, it is preferable to use the ellipsoid as the spherical body 2i.

The constituent material of the spherical body 2i is not limited to metal. It is also possible to form a metal coating on an object made of resin or ceramic by a plating technique or the like and use it as the spherical body 2i. Further, the spherical body 2i does not have to be solid.

In this embodiment, the IC 1 is arranged as a bare chip. However, as is clear from the first embodiment, it is clear that the semiconductor device 30 of the present embodiment is also effective for the IC1 covered by a technique such as CSP.

In this embodiment, the heat conducting structure 32 is used.
Although the metal is mentioned as the material of the above, it is not limited to the metal material. It is also possible to use a composite material made of a material containing resin, ceramic, or the like.

As described above, the semiconductor device 30 having the structure of the present embodiment has the same effects as the semiconductor device 20 of the first embodiment.

Embodiment 3. Semiconductor device 40 according to the present embodiment will be described with reference to FIG. Semiconductor device 40 is obtained by replacing heat conduction structure 22 provided in semiconductor device 20 of the first embodiment with heat conduction structure 42 according to the present embodiment. Therefore, like the second embodiment, the same components are designated by the same reference numerals, and the description thereof will be omitted.

FIG. 10 is a schematic view illustrating the structure of the semiconductor device 40 provided with the heat conducting structure 42. The heat conducting structure 42 is fixed to the surface of the lid 3 facing the space 7a by the heat conducting structure connecting layer 2e. The heat conducting structure 42 includes a resin 2b and a plurality of fillers 2d fixed and supported by the resin 2b. Filler 2d
Is made of a metal having high thermal conductivity represented by Au, Ag, Cu, Al and the like, and is spherical or flaky. The filler 2d is in contact with the active portion 1a.

One surface of the resin 2b is fixed by the heat conductor connecting layer 2e. Also,
The surface of the resin 2b with respect to the IC1 is at least one, preferably a large number of fillers 2 without contacting the IC1.
d is exposed. It is preferable that all the exposed fillers 2d contact the active portion 1a, but not all the exposed fillers 2d have to contact.

In order to thermally couple the lid 3 and the IC 1,
The filler 2d must contact each other in the resin 2b. That is, the density of the filler 2d in the resin 2b is preferably high enough to form a heat conduction path. It is desirable that the filler 2d and the lid 3 contact each other for thermal connection.

The filler 2d which is exposed from the resin 2b and comes into contact with the IC 1 is made of the above-mentioned metal, so that it can be deformed. Therefore, even when the IC1 generates heat, the thermal stress and the drag force can be relaxed by the deformation. The heat of the IC1 transmitted to the filler 2d is sequentially transmitted through the filler 2d forming the heat conduction path,
Reach the lid 3.

Since the heat conducting structure 42 is constituted by the resin 2b and the filler 2d as described above, heat is removed from the IC 1 by the heat conducting structure 42 and is removed from the electrode bump 8 via the lid 3. Is possible. Further, even when the distance between the lid 3 and the IC 1 is different for each semiconductor device 40, it is possible to cope with various distances by using the heat conducting structure 42. That is, it is possible to thermally connect the lid 3 and the IC 1 by adjusting the number of the fillers 2d and the thickness of the resin 2b.

The heat conducting structure 4 in the semiconductor device 40.
The method of installing 2 and the lid 3 is the same as that of the semiconductor device 20 of the first embodiment and the semiconductor device 30 of the second embodiment. First, the resin 2b filled with the filler 2d, which becomes the heat conduction structure 42, is prepared. The resin 2b is formed in such a size that the filler 2d exposed from the resin 2b comes into contact with the active portion 1a when the lid 3 is attached. This is fixed to the lid 3 by the heat conduction structure connection layer 2e. Next, the lid 3 is attached to the substrate 7 on which the IC 1 is already mounted. At this time, the filler 2 exposed from the resin 2b
d contacts IC1.

In the method of manufacturing the semiconductor device 40 described above, the step of attaching the lid 3 is the same as the conventional step.
As another manufacturing method, there is a method in which the resin 2b filled with the filler 2d is supplied to the IC 1 by a technique such as potting and then the lid 3 is attached.

Although the spherical or scaly metal is mentioned as the filler 2d, it is not limited to this. For example, a resin or ceramic having a metal coating formed on its surface by a plating technique or the like is prepared.
You may use as. Further, the filler 2d does not have to be particularly solid, and a space may exist inside. As the material of the filler 2d, a metal typified by Au, Ag, Cu, Al and the like has been taken as an example, but a material having desired thermal conductivity and elasticity can be used as the filler 2d.

Further, as in the first and second embodiments, the lid 3
The space between the heat conducting structure 42 and the heat conducting structure 42 may be occupied by a substantially solid structure made of metal or the like.

As described above, the semiconductor device 40 having the structure of the present embodiment has the same effects as those of the semiconductor devices 20 and 30 of the first and second embodiments.

[0063]

According to the structure of the first aspect, when the heat from the semiconductor element is removed by the heat conductor, the thermal stress and the drag acting between the semiconductor element and the heat conductor are reduced. It becomes possible to relieve by the deformation of the body. This avoids breakage of the semiconductor element and improves the reliability of the semiconductor device.

According to the second aspect of the invention, the elasticity of the material contained in the heat conductor allows the heat conductor to be deformed. Therefore, it is easy to obtain the semiconductor device according to the first aspect.

According to the third aspect of the invention, it is possible to obtain the heat conductor having desired elasticity only by controlling the cross-sectional area when forming the linear portion. This facilitates appropriate relaxation of thermal stress.

According to the fourth aspect of the invention, since the portion of the heat conductor that contacts the semiconductor element is spherical,
The contact state between the heat conductor and the semiconductor element is always uniform. As a result, the heat generated by the semiconductor element can be stably removed by the heat conductor.

According to the structure described in claim 5, the heat conductor can be suitably deformed by being bent. As a result, the semiconductor device according to the first aspect is preferably realized.

According to the structure described in claim 6, by changing the size of the slit, the elasticity of the heat conductor can be adjusted without changing the thickness or the like. As a result, the semiconductor device according to the fifth aspect can be suitably obtained.

According to the configuration of claim 7, the shape of the heat conductor other than the abutting end can be stabilized by the covering material. This makes it possible to stably remove heat from the semiconductor element and improve the reliability of the semiconductor device.

According to the structure described in claim 8, even for a semiconductor device in which the distance between the heat radiator and the semiconductor element is different, these can be adjusted only by adjusting the thickness of the covering material and the number of the heat conductive pieces. It becomes possible to correspond to the interval. This improves the versatility of the heat conductor and simplifies the manufacturing of the semiconductor device of the present invention.

As described above, according to the present invention, it is possible to significantly reduce the thermal stress applied to the semiconductor element, which is a problem when improving the heat dissipation of the semiconductor device. Since the semiconductor device of the present invention can be manufactured without significantly changing the conventional structure and manufacturing process, it is possible to inexpensively supply a high-quality semiconductor device.

[Brief description of drawings]

FIG. 1 is a schematic view illustrating the structure of a semiconductor device 20.

FIG. 2 is a schematic view illustrating a thin wire 2a having a spherical tip.

FIG. 3 is a schematic view illustrating the structure of a semiconductor device 20 provided with a resin 2b.

FIG. 4 is a schematic view illustrating the structure of a semiconductor device 20 including a solid structure 2f.

FIG. 5 is a schematic view illustrating the structure of a semiconductor device 30 provided with a plate 2c.

FIG. 6 is a schematic view illustrating the structure of a semiconductor device 30 having a slit 2h.

FIG. 7 is a perspective view illustrating the structure of a plate 2c provided with a slit 2h.

FIG. 8 is a cross-sectional view illustrating the structure of a plate 2c including a plurality of layers.

FIG. 9 is a schematic view illustrating the structure of a semiconductor device 30 including a spherical body 2i.

FIG. 10 is a schematic view illustrating the structure of a semiconductor device 40.

FIG. 11 is a schematic diagram showing a conventional semiconductor device 100.

[Explanation of symbols]

1 IC, 1a active part, 2a thin wire, 2b resin, 2
c plate, 2d filler, 2e heat conductive structure connecting layer,
2f solid structure, 2g solid structure connection layer, 2h slit, 2i spherical body, 3 lid, 4 die pad, 5
Wiring wire, 6 die bond material, 7 substrate, 7a space,
8 electrode bumps, 9 radiating fins, 20, 30, 40
Semiconductor device, 22, 32, 42 heat conducting structure.

Claims (8)

[Claims] 1. A semiconductor element, and a heat conductor having a contact end for contacting a part of the semiconductor element, the heat conductor conducting heat from the semiconductor element through the contact end, and the heat conductor conducting by the heat conductor. And a heat radiator for radiating the generated heat, wherein the heat conductor is deformable at least at the contact end. 2. The semiconductor device according to claim 1, wherein the thermal conductor includes a material having elasticity at least at the abutting end. 3. The semiconductor device according to claim 2, wherein the abutting end includes a linear portion. 4. The semiconductor device according to claim 3, wherein the tip of the linear portion is provided with a sphere that abuts the semiconductor element. 5. The semiconductor device according to claim 2, wherein the heat conductor is bent at the abutting end. 6. The semiconductor device according to claim 5, wherein a slit is formed in the heat conductor at the abutting end. 7. A covering material is further provided, which is isolated from the semiconductor element and covers at least a part of the thermal conductor.
The semiconductor device according to claim 2. 8. The semiconductor device according to claim 7, wherein the heat conductor includes a plurality of heat conductive pieces.