JPH09252217A - Monolithic antenna - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress determination in the radiation characteristics of the mono lithic antenna used for microwave and millimeter bands. SOLUTION: A semiconductor board 21 and a dielectric board 12 are opposed to each other with a prescribed interval by means of bumps 20 and a strip conductor 16 is formed to a face of the semiconductor board 11 opposed to the dielectric board 12 and a ground conductor 13 is formed to the dielectric board 12 opposed to the strip conductor 16. A coupling hole 14 is made to the ground conductor 13 at a position corresponding to the strip conductor 16. A microwave circuit and the ground conductor 13 composed of the strip conductor 16 or the like form a microstrip line and the strip conductor 16 and the coupling hole 14 form a microstrip antenna.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a monolithic antenna used in a microwave band, a millimeter wave band or the like.

[0002]

2. Description of the Related Art With the progress of information-oriented society in recent years, demand for wireless lines such as high-speed wireless LAN and personal wireless communication is increasing. In order to meet this requirement, for example, the Institute of Electronics, Information and Communication Engineers Microwave Study Group material MW94-128
As described in "Development / Practical Trends of Millimeter-Wave Application Systems", research and development for the use of microwave bands and millimeter-wave bands, which have a wide communication band and a large number of channels, are being actively conducted. .

As one of the results of such research and development,
There is a monolithic antenna that integrates an antenna and a microwave circuit. This is, for example, Japanese Patent Laid-Open No. 4-160804.
It is disclosed in Japanese Patent Laid-Open No. 6-77729 and the like.

FIG. 14 shows a simplified structure of the structure disclosed in Japanese Patent Laid-Open No. 4-160804. This is disclosed in FIG. 9 of JP-A-6-77729. Further, FIG. 14 (a) is a view seen from the radiation conductor side, and FIG. 14 (b) is a view seen from the opposite microwave circuit side.

In the figure, 1 is a semiconductor substrate, 2 is a dielectric substrate, a ground conductor 3 is formed between the semiconductor substrate 1 and the dielectric substrate 2, and a coupling hole 4 is opened in this ground conductor 3. ing. A radiation conductor 5 is formed on the surface of the dielectric substrate 2 opposite to the ground conductor 3 side, and a strip conductor 6 is formed on the surface of the semiconductor substrate 1 opposite to the ground conductor 3 side. The input end 7 of the strip conductor 6 and the strip conductor 6
An amplifier 8 and a phase shifter 9 are formed between the coupling hole 4 and a portion corresponding to the coupling hole 4. These strip conductors 6,
A microwave circuit is formed by the amplifier 8, the phase shifter 9, and the like.

The high frequency signal input to the input terminal 7 is transferred to the phase shifter 9
Is set to a predetermined phase and input to the amplifier 8. The high frequency signal amplified by the amplifier 8 is input to the radiation conductor 5 through the microstrip line between the strip conductor 6 and the ground conductor 3 and the coupling hole 4. Here, the radiation conductor 5 and the ground conductor 3 constitute a microstrip antenna, and the high frequency signal is radiated from the radiation conductor 5 to the space.

[0007]

Although the conventional monolithic antenna as shown in FIG. 14 has an advantage that the device can be downsized, it still has the following problems. Such a monolithic antenna is manufactured by bonding the semiconductor substrate 1 and the dielectric substrate 2 together. At this time, IEICE Transactions CI Vo
l. J77-CI No. 11 "Design and Prototype of MMIC Integrated Millimeter-Wave Band Microstrip Antenna" (1
As described in (1994), the radiation characteristics of the antenna are deteriorated by the adhesive or the adhesive sheet used for the bonding.

Further, if the positional relationship between the substrates is deviated when the two substrates are bonded together, the degree of electromagnetic coupling in the microstrip line is significantly reduced as compared with the case where they are not deviated, and as a result, the radiation of the antenna is radiated. The characteristics deteriorate. In order to solve the above problems, it is an object of the present invention to provide a monolithic antenna with little deterioration in the radiation characteristics of the antenna.

[0009]

In order to solve the above-mentioned problems, the present invention provides a first substrate including a dielectric or a semiconductor and a main surface of the first substrate as an invention according to claim 1. A formed microwave circuit, a ground conductor formed so as to face the main surface on which the microwave circuit is formed with a predetermined gap, and an electromagnetic coupling provided on the ground conductor with the microwave circuit. A monolithic antenna having a coupling hole for

According to a second aspect of the present invention, the microwave circuit of the second substrate, in which the ground conductor is opposed to the first substrate with a predetermined gap and includes a dielectric or a semiconductor, is formed. Provided is a monolithic antenna formed on a main surface opposite to the main surface.

According to a third aspect of the present invention, there is provided a first substrate containing a dielectric or a semiconductor, a microwave circuit formed on one main surface of the first substrate, and a predetermined distance from the first substrate. A second substrate including a dielectric or a semiconductor facing each other with a space between them, a ground conductor formed on the main surface of the second substrate facing the main surface on which the microwave circuit is formed, and a ground conductor The coupling hole provided and a radiation conductor formed on the main surface of the second substrate on the side opposite to where the ground conductor is formed are electromagnetically coupled to the microwave circuit through the coupling hole. Provide a monolithic antenna with.

Further, as a fourth aspect of the present invention, there is provided the monolithic antenna according to the first to third aspects, wherein the first substrate and the second substrate are connected by bumps. According to the inventions of claims 1 and 3, since the monolithic antenna is formed so that the first substrate and the ground conductor face each other with a predetermined gap therebetween, so-called bonding between the substrates is not performed. Therefore, no adhesive or adhesive tape is needed, and the radiation characteristics of the antenna do not deteriorate.

In the case of the invention of claim 1, the microwave circuit and the coupling hole are electromagnetically coupled, and in the case of the invention of claim 3, the microwave circuit and the radiation conductor are electromagnetically coupled via the coupling hole. To form a microstrip antenna.

In the conventional monolithic antenna as shown in FIG. 14, the microwave circuit and the radiation conductor are coupled through the coupling hole as in the case of the invention of claim 3, but in this case, the microwave circuit and the coupling hole are coupled. The semiconductor material is interposed between them. In the case of a semiconductor material, its relative dielectric constant is GaAs
Is 13 and Si is as high as 11.7.

On the other hand, in the case of the inventions of claims 1 and 3, when the predetermined gap between the microwave circuit and the coupling hole is not filled with any substance, air is present in this portion. Will be done. The relative permittivity of air is 1, which is lower than that of semiconductor materials such as GaAs and Si.

When the relative permittivity is high, when the so-called substrates are bonded to each other to cause a positional deviation, the degree of decrease in the degree of electromagnetic coupling increases. Therefore, the rate at which the degree of coupling decreases in air with a lower dielectric constant is smaller. As a result, the degree of coupling is not significantly reduced, and the radiation characteristics of the antenna are less degraded.

Even when the predetermined space is filled with resin, the relative permittivity of resin is generally about 3 to 4, so that the degree of coupling does not decrease as compared with GaAs or Si. Also in the invention of claim 1, as in the case of the invention of claim 3, the second substrate is used to form the ground conductor on the main surface facing the microwave circuit. And most preferred. This is the invention of claim 2 in the present invention.

Further, as a method for providing a predetermined interval,
It is preferable that the two substrates are connected by bumps as in the invention of claim 4. This is because when the flip-chip method is used to connect the bumps, the self-alignment effect during solder reflow can suppress misalignment and reduce the deterioration of the radiation characteristics of the antenna.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. (First Embodiment) FIG. 2 is a sectional view of a perspective view of a monolithic antenna according to a first embodiment of the present invention, taken along the line AB in FIG. 1 and FIG. Further, FIG. 3 is a partial perspective view. This monolithic antenna is assumed to be used in the millimeter wave band with a frequency of 60 GHz.

In FIGS. 1 to 3, 11 is a 4 mm square semiconductor substrate using GaAs having a thickness of about 250 μm, and 12 is polytetrafluoroethylene having a relative dielectric constant of 2.5 and a thickness of about 150 μm (trade name: Teflon). It is a dielectric substrate using. The semiconductor substrate 11 and the dielectric substrate 12 are formed so as to face each other with a predetermined gap.

A ground conductor 13 made of Cu and having a thickness of about 15 μm is formed on the main surface of the dielectric substrate 12 facing the semiconductor substrate 11, and a rectangular coupling hole 4 is formed in this ground conductor 13. . In addition, the main surface of the semiconductor substrate 11 facing the dielectric substrate 12 has a thickness of about 1 so as to face the ground conductor 13.
A with a width of about 100 μm and a characteristic impedance of 50Ω
A strip conductor 16 using u is formed.

The input end 17 of the strip conductor 16
And a portion 1 of the strip conductor 16 facing the coupling hole 14
An amplifier 18 using a semiconductor element and a phase shifter 19 are formed between the amplifier 6a and 6a. The strip conductor 16, the amplifier 18, the phase shifter 19 and the like form a microwave circuit.

The amplifier 18 and the phase shifter 19 are omitted in the sectional view of FIG. 2, and the same applies to the sectional views of the following embodiments. Further, the semiconductor substrate 11 and the dielectric substrate 12 are mechanically and electrically connected to each other by bumps 20 using solder having a diameter of about 200 μm and a height of about 50 μm. The height of this bump is represented by d.

The operation of the monolithic antenna having such a configuration is as follows. The high frequency signal input to the input terminal 17 is set to a predetermined phase by the phase shifter 19 and input to the amplifier 18. The high frequency signal is amplified by the amplifier 18, and the amplified high frequency signal is input to the microstrip line between the strip conductor 16 and the ground conductor 13. In the case of this embodiment, the strip conductor 16a
And the coupling hole 14 are electromagnetically coupled to form a microstrip antenna, and a high frequency signal is radiated from the coupling hole 14 to the space through the dielectric substrate 12.

In the case of this embodiment, the strip conductor 16a
The positional relationship between and the coupling hole 14 is as shown in FIG. That is, the strip conductor 16 a is formed so that the longitudinal direction of the strip conductor 16 a and the longitudinal direction of the coupling hole 14 are orthogonal to each other, and the strip conductor 16 a is located substantially at the center of the coupling hole 14.

The distance La from the center of the coupling hole 14 to the end of the strip conductor 16a is set to be approximately λa / 4, where λa is the wavelength of the high frequency signal on the strip conductor 16a. There is. This is because the energy of the signal from the strip conductor 16a to the coupling hole 14 becomes maximum at this length, and the degree of electromagnetic coupling becomes maximum.

Further, the length Lb in the longitudinal direction of the coupling hole 14 is
When the wavelength of the high frequency signal on the ground conductor 13 is λb, it is set to be approximately λb / 2. This is because a microstrip antenna can be constructed without using a radiation conductor at this length.

For example, when the frequency is 60 GHz, the wavelength λ0 in vacuum is 5 mm. At this time, λa is 2.85 m
m is about 3.8 mm. By these, L
When a and Lb are calculated, La = 0.71 mm, Lb
= About 1.9 mm.

The difference between the wavelengths of λa and λb is that GaA having a relative permittivity of 13 in which the strip conductor 16a is formed.
This is due to the difference in relative dielectric constant between the semiconductor substrate 11 using s and the dielectric substrate 12 using polytetrafluoroethylene having a relative dielectric constant of 2.5 on which the ground conductor 13 is formed. That is, the wavelength of the conductor on the substrate having a higher relative dielectric constant is lower.

Of the positional relationships between La and Lb, La = λa /
If the relationship of 4 is deviated, the degree of electromagnetic coupling in the microstrip antenna decreases, and the radiation characteristics of the antenna deteriorate. However, in the present embodiment, the strip conductor 16a and the coupling hole 14 are separated by a predetermined distance, and there is no material therebetween, in other words, air is interposed, so that the decrease in the degree of coupling is suppressed. You can

Let us assume that the degree of coupling in the positional relationship shown in FIG.
And This positional relationship is La = λa / 4 to 100 μm
When they are deviated, the degree of decrease in coupling is only about 2.5%. On the other hand, in the conventional monolithic antenna as shown in FIG. 14, a microstrip antenna structure similar to that of the present embodiment in which the radiation conductor is not provided is adopted, and 1
In the case of a shift of 00 μm, the decrease in the coupling degree reaches about 7%, and the deterioration of the radiation characteristic of the antenna becomes large as compared with the present embodiment.

The reason why the degree of coupling is greatly reduced is that, in the case of the conventional monolithic antenna, the GaAs substrate having a relative dielectric constant of 13 and a high relative dielectric constant is used between the microstrip antennas. On the other hand, in the case of the present embodiment, since the air having a relative permittivity as low as 1 is used, the decrease in the degree of coupling can be suppressed.

In order to suppress the decrease in the degree of coupling, it is not necessary to use air, and a material having a relative dielectric constant of 4 or less may be used. This is because if it is 4 or less, the decrease in the coupling degree is suppressed to about 5% or less, and it hardly affects the radiation characteristic deterioration of the antenna.

Further, in this embodiment, the flip chip method using the bumps 20 is used to connect the semiconductor substrate 11 and the dielectric substrate 12. Specifically, the connection is made as follows. First, a bump 20 made of tin-lead eutectic solder is formed on the upper surface of the semiconductor substrate 11 by a plating method. Next, the semiconductor substrate 11 and the dielectric substrate 12 are temporarily fixed using a flip chip mounter. This is put in a reflow furnace and the bumps 20 are melted and connected by a solder reflow method.

At this time, 50 μm at maximum before solder reflow
The misalignment between the semiconductor substrate 11 and the dielectric substrate 12 which has been about 2 to 3 is caused by the self-alignment effect at the time of solder reflow.
It became as small as μm. Therefore, the displacement is small and the degree of coupling does not decrease.

On the other hand, in the case of the conventional monolithic antenna, when the substrates are attached to each other, for example, 100 μm is used.
If there is a misalignment of m, the misalignment will be saved as it is, and the degree of decrease in coupling will increase. This deviation depends on the accuracy of the mounter used, but is usually about 100 μm.

Further, in the case of the present embodiment, the transmission loss of a signal at a frequency of 60 GHz in the strip conductor 16 having a characteristic impedance of 50Ω and a width of 100 μm is about 0.
It becomes 08 dB / mm.

On the other hand, in the conventional monolithic antenna, when the thickness of the GaAs substrate is 100 μm, it is necessary to set the width to 65 μm in order to make the characteristic impedance of the strip conductor 50Ω as in this embodiment. However, the transmission loss increases to about 0.1 dB / mm.

The cause is considered as follows. There are two main factors that determine the transmission loss: one is conductor loss and the other is dielectric loss. These two losses are
Although it depends on the dielectric material, wiring material, layer structure, etc. used, conductor loss is generally 5 to 5 of dielectric loss.
20 times bigger.

Of these, the conductor loss with a large contribution is smaller when the surface area of the strip conductor is larger.
This means that the conductor loss is smaller in the present embodiment where the thickness is 00 μm.

Although there is a difference in transmission loss only by the difference in the conductor loss, the dielectric loss is somewhat related. Contrary to conductor loss, dielectric loss increases as the area of contact between the strip conductor and the dielectric increases. However, considering the condition that the conductor loss is 5 to 20 times larger than the dielectric loss, it is preferable that the strip conductor layer has a large area.

The dielectric loss also depends on the material between the microstrip lines. Specifically, the smaller the dielectric loss tangent of the substance, the smaller the dielectric loss. In the case of the present embodiment, the air has a dielectric loss tangent of 0, and in the case of the conventional case, it is GaAs having a dielectric loss tangent of 0.001. Therefore, the dielectric loss is smaller in the present embodiment. The embodiment has a smaller transmission loss.

Since the bump height d affects the coupling degree and the transmission loss, there is a preferable range. Specifically, it is preferably about 10 to 100 μm. This is 10
This is because if the thickness is smaller than μm, the width of the strip conductor 16 must be narrowed in order to keep the characteristic impedance of the microstrip line constant, and the transmission loss becomes large. This is because it becomes easier to receive.

Further, in the present embodiment, although the dielectric substrate 12 does not participate in electromagnetic coupling, its thickness and relative permittivity affect the radiation characteristics of the antenna. Since the dielectric loss increases as the thickness increases, the thickness is 100μ.
m or less is preferable. Since the band of the antenna is inversely proportional to the relative permittivity, the relative permittivity is preferably 10 or less.

(Second Embodiment) FIG. 6 shows a sectional view of a monolithic antenna according to a second embodiment of the present invention taken along the line AB in FIGS. 5 and 5. In FIGS. 5 and 6, the same parts as those in FIGS. 1 to 4 and similar parts are designated by the same reference numerals, and detailed description of those parts will be omitted and the same applies below.

The monolithic antennas of FIGS. 5 and 6 differ from the monolithic antenna of the first embodiment in that
A radiating conductor 15 similar to that of the conventional monolithic antenna of FIG. 14 is used on the main surface of the dielectric substrate 12 on the side opposite to where the ground conductor 13 is formed. The radiation conductor 15 is made of Cu having a diameter of about 1.8 mm and a thickness of about 15 μm.

In the case of this embodiment, the strip conductor 16 and the radiation conductor 15 are electromagnetically coupled to each other through the coupling hole 14, which constitutes a microstrip antenna.
Therefore, the length Lb of the coupling hole 14 is smaller than λb / 2 unlike the first embodiment, and is 300 μm × 100 μm.
Becomes a rectangle. The reason why it is smaller than λb / 2 is to suppress resonance of the coupling hole 14 itself.

This monolithic antenna has the same effects as the monolithic antenna of the first embodiment, and since the radiation conductor 15 is used, the desired directivity is better than that of the monolithic antenna of the first embodiment. It has the advantage of being easily obtained.

Further, in this monolithic antenna, the dielectric substrate 12 also participates in the electromagnetic coupling of the microstrip antenna, so that the preferable thickness range is 50 to 20.
It is about 0 μm. This is because if the thickness is smaller than 50 μm, the used band becomes narrow, and the used band is saturated at a substrate thickness of about 200 μm.

(Third Embodiment) FIG. 7 is a perspective view of a monolithic antenna according to a third embodiment of the present invention, and FIG. 8 is a sectional view taken along the line AB of FIG.

This monolithic antenna is different from the monolithic antenna of the first embodiment in that the semiconductor substrate 1
The point is that a benzocyclobutene resin having a relative dielectric constant of 2.7 and a dielectric loss tangent of 0.0008 is sealed as the sealing resin 21 between 1 and the dielectric substrate 12.

Therefore, the width for setting the characteristic impedance of the strip conductor 16 to 50Ω is as small as 60 μm, and the transmission loss is about 0.1 dB / mm, but deviates from La = λa / 4 by 100 μm. In this case, the degree of coupling is about 4%, which is smaller than that of the conventional monolithic antenna, and the deterioration of the radiation characteristic of the antenna is suppressed.

(Fourth Embodiment) FIG. 10 is a sectional view of a monolithic antenna according to a fourth embodiment of the present invention, taken in the direction of the arrows A and B in FIG. 9 and FIG.

This monolithic antenna is a combination of the monolithic antennas of the second and third embodiments. That is, the radiation conductor 15 is formed,
The sealing resin 21 is sealed between the semiconductor substrate 11 and the dielectric substrate 12.

Therefore, in this monolithic antenna, the effect obtained by combining the second embodiment and the third embodiment can be obtained.

(Fifth Embodiment) FIG. 11 shows a fifth embodiment of the present invention.
2 is a sectional view of the monolithic antenna according to the embodiment of FIG. The difference between this monolithic antenna and the monolithic antenna of the first embodiment is that the ground conductor 13 also serves as a lead frame, so that no dielectric substrate is used.
Also, the semiconductor substrate 11 and the portion of the ground conductor 13 corresponding thereto are covered with the sealing resin 21, that is, mold-sealed.

This monolithic antenna has the same effect as that of the third embodiment, and also has the effect of high productivity.

(Sixth Embodiment) FIG. 12 shows a sixth embodiment of the present invention.
2 is a sectional view of the monolithic antenna according to the embodiment of FIG. This monolithic antenna is different from the monolithic antenna of the first embodiment in that an interlayer insulating film 22 and a metal layer 23 are laminated on the ground conductor 13, whereby an input / output pad 24 is provided in the peripheral portion, In addition, a bent metal core substrate 25 is formed on the semiconductor substrate 11 side, and a chip component 26 different from the semiconductor substrate 11 is formed in the recess of the bent metal core substrate 25.

In this monolithic antenna, unlike the monolithic antenna of the first embodiment, the signal radiated from the microstrip antenna does not pass through the dielectric substrate, so that the dielectric loss is reduced, and as a result, the radiation characteristic of the antenna is reduced. Further improve. Also, the input / output pad 24
Since it is formed, it can be mounted on other boards,
In addition, the presence of the metal layer 23 also has the effect of improving the shielding property.

(Seventh Embodiment) FIG. 13 shows a seventh embodiment of the present invention.
2 is a sectional view of the monolithic antenna according to the embodiment of FIG.

This monolithic antenna is different from the above-mentioned monolithic antenna in that it is not connected by bumps. That is, a cavity having at least one end opened is provided in the semiconductor substrate 11, the ground conductor 13 is provided on one side of the facing surface in the cavity, and the strip conductor 16 is provided on the opposite side.

Even with such a configuration, the same effect as that of the first embodiment can be obtained. Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments.

For example, GaAs is used as the semiconductor substrate 11, but Si may be used. Although polytetrafluoroethylene is used as the dielectric substrate 12, other fluororesins such as polychlorotrifluoroethylene may be used, or benzocyclobutene resin, epoxy resin, polyimide resin, alumina, quartz, etc. may be used. May be. Since the material of the dielectric substrate can be selected, the antenna directivity and frequency band selectivity are high.

Further, Cu and Au are used for the ground conductor 13, the radiation conductor 15 and the strip conductor 16, but Al, Ti, N
You may use i etc. Although the benzocyclobutene resin is used as the sealing resin 21, an epoxy resin, a bifinyl resin, or the like may be used.

A dielectric substrate may be used instead of the semiconductor substrate 11 and a semiconductor element or the like may be formed on the surface thereof, or conversely, a semiconductor substrate may be used instead of the dielectric substrate 12.

Further, in the above embodiments, the case where the antenna is used as the transmitting antenna has been described. However, for example, an output terminal may be provided instead of the input terminal 7 in FIG. It may be provided and used as a transmitting / receiving antenna. Further, it is naturally possible to combine the above-described embodiments, and other various modifications can be made without departing from the scope of the present invention.

[0067]

As described above, according to the present invention, it is possible to provide a monolithic antenna with little deterioration in radiation characteristics of the antenna.

[Brief description of drawings]

FIG. 1 is a perspective view of a monolithic antenna according to a first embodiment of the present invention.

FIG. 2 is a sectional view of the monolithic antenna according to the first embodiment of the present invention.

FIG. 3 is a partial perspective view of the monolithic antenna according to the first embodiment of the present invention.

FIG. 4 is a diagram showing a positional relationship between a coupling hole and a strip conductor in the monolithic antenna according to the first embodiment of the present invention.

FIG. 5 is a perspective view of a monolithic antenna according to a second embodiment of the present invention.

FIG. 6 is a sectional view of a monolithic antenna according to a second embodiment of the present invention.

FIG. 7 is a perspective view of a monolithic antenna according to a third embodiment of the present invention.

FIG. 8 is a sectional view of a monolithic antenna according to a third embodiment of the present invention.

FIG. 9 is a perspective view of a monolithic antenna according to a fourth embodiment of the present invention.

FIG. 10 is a sectional view of a monolithic antenna according to a fourth embodiment of the present invention.

FIG. 11 is a sectional view of a monolithic antenna according to a fifth embodiment of the present invention.

FIG. 12 is a sectional view of a monolithic antenna according to a sixth embodiment of the present invention.

FIG. 13 is a sectional view of a monolithic antenna according to a seventh embodiment of the present invention.

FIG. 14 is a perspective view of a conventional monolithic antenna.

[Explanation of symbols]

11 ... Semiconductor substrate; 12 ... Dielectric substrate; 13 ... Ground conductor;
14 ... Coupling hole; 15 ... Radiating conductor; 16 ... Strip conductor; 17 ... Input end; 18 ... Amplifier; 19 ... Phaser; 20
... bumps; 21 ... sealing resin

Front page continued (72) Inventor Shoichi Honma 1 Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa Inside the Toshiba Research and Development Center, Inc. (72) Inventor Junko Onomura Komukai-shishi, Kawasaki-shi, Kanagawa No. 1 Incorporated Toshiba Corporation R & D Center (72) Inventor Eiji Takagi No. 1 Komukai Toshiba-cho, Kawasaki-shi, Kanagawa Kanagawa Prefecture In-house Toshiba R & D Center

Claims (4)

[Claims] 1. A first substrate containing a dielectric or a semiconductor, a microwave circuit formed on one main surface of the first substrate, and a predetermined distance from the main surface on which the microwave circuit is formed. A monolithic antenna comprising a ground conductor formed to face each other at a distance, and a coupling hole provided in the ground conductor and electromagnetically coupled to the microwave circuit. 2. A main surface of the second substrate, which is opposed to the first substrate at a predetermined distance and is opposed to a main surface of the second substrate including a dielectric or a semiconductor, on which the microwave circuit is formed. A monolithic antenna formed on the surface. 3. A first substrate containing a dielectric material or a semiconductor, a microwave circuit formed on one main surface of the first substrate, and a dielectric substrate which is opposed to the first substrate at a predetermined interval. A second substrate including a body or a semiconductor, a ground conductor formed on the main surface of the second substrate facing the main surface on which the microwave circuit is formed, and a coupling hole formed in the ground conductor A monolithic antenna provided with a radiation conductor formed on the main surface of the second substrate opposite to the surface on which the ground conductor is formed and electromagnetically coupled to the microwave circuit through the coupling hole. 4. The monolithic antenna according to claim 1, wherein the first substrate and the second substrate are connected by bumps.