JPH09213213A - Manufacture of electron emission element, electron source board and image forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a surface conductive type electron emission element on a large area easily at low cost. SOLUTION: Plural electron emission elements which are constituted by forming electron emission part 5 on a part of a conductive thin film 4 connecting between a pair of element electrodes 2, 3 are manufactured on an insulating substrate 1 in this method. In this case, a lot of pairs of element electrodes are formed on an insulating substrate 1, a solution containing material which forms a conductive film 4 is applied between each pair of element electrodes 2, 3 in the condition of a liquid drop, and the liquid drop is dried to form the conductive thin film 4 connecting between each pair of element electrodes 2, 3, and also the solution is applied to areas other than between the pair of element electrodes 2, 3 in the condition of the liquid drop at least once prior to the liquid drop is applied between the pair of the element electrodes 2, 3.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron-emitting device, an electron source substrate, and a method for manufacturing an image forming apparatus.

[0002]

2. Description of the Related Art Conventionally, two types of electron emitting devices, a thermionic electron source and a cold cathode electron source, are known. The cold cathode electron source includes a field emission type (hereinafter abbreviated as “FE type”), a metal / insulating layer / metal type (hereinafter abbreviated as “MIM type”), a surface conduction type electron emitting device, and the like. As an example of the FE type, W. P. Dy
ke & W. W. Dolan, "Field emiss
ion ", Advance in Electron
Physics, 8 89 (1956) or C.I.
A. Spindt, “Physical Proper
ties of thin-film field e
Mission cathodes with mol
ybdenium ", J. Appl. Phys., 47.
5248 (1976) and the like are known.

An example of the MIM type is C.I. A. Mead,
"The tunnel-emission ampl
ifier ", J. Appl. Phys., 3264.
6 (1961) and the like are known.

Examples of the surface conduction electron-emitting device type include:
M. I. Elinson, Radio Eng. Ele
ctron Phys. 10 (1965) and so on.
The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current is applied to a thin film having a small area formed on a substrate in parallel with the film surface. As the surface conduction electron-emitting device, SnO by Elinson et al.
₂ using a thin film, using an Au thin film [G. Dit
tmer: "Thin Solid Films", 9
317 (1972)], by In ₂ O ₃ / SnO ₂ thin film [M. Hartwell and C.M. G. FIG. F
onstad: “IEEE Trans.ED Con
f. , 519 (1975)], carbon thin films [Hiraki Araki et al .: "Vacuum", Vol. 26, No. 1, p. 22 (1983)] and the like.

As a typical device configuration of these surface conduction electron-emitting devices, the above-mentioned M. The Hartwell device configuration is shown in FIG. In FIG. 1, reference numeral 1 denotes a substrate. Reference numeral 4 denotes a conductive thin film, which is formed of a metal oxide thin film or the like formed in an H-shaped pattern by sputtering. The electron emitting portion 5 is formed by an energization process called energization forming described below. The element electrode spacing L in the figure is set to 0.5 mm to 1 mm, and the width W ′ of the conductive thin film 4 is set to 0.1 mm. The position and shape of the electron emitting portion 5 are schematically shown.

Conventionally, in these surface conduction electron-emitting devices, it is general that the conductive thin film 4 is previously subjected to an energization process called energization forming to form the electron-emitting portion 5 before the electron emission. It was That is, the energization forming is to apply a DC voltage or a very slowly increasing voltage, for example, about 1 V / min, to both ends of the conductive thin film 4 and to energize the conductive thin film 4 to locally destroy, deform or alter the conductive thin film, To form the electron-emitting portion 5 in a high resistance state. In the electron emitting portion 5, a crack is generated in a part of the conductive thin film 4, and electrons are emitted from the vicinity of the crack. In the surface conduction type electron-emitting device subjected to the energization forming process, a voltage is applied to the conductive thin film 4 and a current is caused to flow through the device to cause the electron-emitting portion 5 to emit electrons.

The above-mentioned surface conduction electron-emitting device has an advantage that a large number of devices can be arrayed over a large area because it has a simple structure and is easy to manufacture. Therefore, various applications that can make full use of this feature are being researched. For example, a charged beam source, a display device such as an image display device may be used.

FIG. 15 shows a structure of an electron-emitting device disclosed in Japanese Patent Laid-Open No. 2-56822. In FIG.
Is a substrate, 2 and 3 are device electrodes, 4 is a conductive thin film, and 5 is an electron emitting portion. As a method of manufacturing this electron-emitting device,
There are various methods, for example, the device electrodes 2 and 3 are formed on the substrate 1 by a general vacuum deposition technique or a photolithography technique.
To form Next, the conductive thin film 4 is formed by a dispersion coating method or the like. After that, a voltage is applied to the device electrodes 2 and 3 to carry out an energization process to form the electron emitting portion 5.

[0009]

However, since the manufacturing method according to the above-described conventional example is manufactured mainly by a semiconductor process, it is difficult to form an electron-emitting device in a large area with the current technology. However, there is a drawback that a special and expensive manufacturing device is required and the production cost is high.

Further, in the current technology, the position accuracy of the electron-emitting device is determined by the alignment accuracy due to the mask alignment in the photolithography technology, and it is difficult to correct the alignment during the process step.

Therefore, an object of the present invention is to provide a surface-conduction type electron-emitting device which is low in cost and easily uniform in a large area, an electron source substrate having the same, and an image forming apparatus.

[0012]

The method of manufacturing an electron-emitting device according to the present invention, which has been made to achieve the above-mentioned object, provides a method for forming a plurality of electron-emitting devices on an insulating substrate. In the step of forming the conductive thin film for forming the electron emitting portion by applying the solution containing the material for forming the conductive film between the pair of device electrodes to be formed in the form of droplets, the liquid is formed at least once. A step of applying a droplet to a region other than between the element electrodes, confirming the droplets applied to the region other than between the element electrodes and observing the shape, and then applying the droplet between the element electrodes. Characterize.

Preferably, a droplet is applied to a region other than between the pair of device electrodes, and then the droplet is irradiated with light, and the droplet is applied based on an intensity ratio signal of transmitted light or reflected light of the droplet. A step of aligning the positions is included, and thereafter, a droplet is applied between the paired device electrodes. The droplets of the solution containing the conductive film forming material are preferably applied by an inkjet method, and the inkjet method is more preferably a method of generating bubbles by applying thermal energy and discharging the droplets. Further, the film thickness of the electron-emitting portion of the electron-emitting device manufactured according to the present invention can be controlled by the droplet amount and the number of droplets when the droplet of the solution containing the conductive film forming material is applied.

An electron source substrate according to the present invention is an electron source substrate in which a plurality of electron-emitting devices are arranged on an insulating substrate and wirings between the electron-emitting devices and terminals for voltage application to the devices are formed. Each electron-emitting device is manufactured by the method described above.

In this electron source substrate, for example, column-direction wirings and row-direction wirings are arranged in a matrix with an insulating layer interposed, and one of the pair of element electrodes is continuously provided on the insulating substrate at the intersection thereof. The column-directional wirings are connected to each other, and the other is connected to the row-directional wirings through the opening of the insulating layer. Droplets of the material solution for forming the conductive thin film are continuously applied between the device electrodes at the intersections, and Form the emission part.

The image forming apparatus of the present invention is based on an electron emitting element as an electron source, a voltage applying means to the element, a light emitting body which emits light upon receiving electrons emitted from the element, and an external signal. A driving circuit for controlling a voltage applied to the device, and the electron-emitting device is manufactured by the above-described method.

[0017]

According to the present invention, a fine particle film (conductive thin film) can be formed by the above method without using a photolithography technique.
Therefore, the electron-emitting device can be easily manufactured in a large area at low cost. In addition, if it is confirmed whether or not the electron-emitting devices can be formed and the alignment is performed before forming the electron-emitting devices, the alignment accuracy can be improved and the yield can be improved.

[0018]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view showing a manufacturing method according to an embodiment of the present invention, and FIG. 2 is a view showing a surface conduction electron-emitting device manufactured by the method. 3 to 5 each show an electron source substrate manufactured by the method of FIG.
1 to 5, 1 is a substrate, 2 and 3 are element electrodes, 4 is a conductive thin film, 5 is an electron emitting portion, 6 is a droplet applying device, 7 is a droplet, and 8 is a conductive thin film 4. A droplet 9 previously provided for alignment on the substrate 1 is an optical microscope.

The droplet applying device 6 may be any device as long as it can form an arbitrary droplet, but it can be controlled in the range of about ten and several ng to several tens of ng, and can be controlled. An inkjet type device that can easily form a minute amount of droplets of about 10 ng or more is preferable. The material of the liquid droplets may be in any state as long as the liquid droplets can be formed, but it may be a solution, an organic metal solution, or the like in which the above metal or the like is dispersed and dissolved in water, a solvent, or the like. .

First, element electrodes are formed on a substrate that has been thoroughly washed with an organic solvent or the like and dried by using a vacuum deposition technique and a photolithography technique (FIG. 1A). Next, after applying the droplets 7 and 8 to any place other than the element electrode on the substrate, an intensity ratio signal of transmitted light or reflected light of the droplet 8 is used by using an optical microscope 9 and a scale (not shown). Is processed, the presence / absence of the droplet 8 is confirmed, the distance between the element electrodes is measured, and the droplet 7 is aligned so that it can be applied between the element electrodes. After that, the droplet 7 is applied between the element electrodes 2 and 3 using the droplet applying device 6 (FIG. 1B). After applying the droplets by the above method, from 300 degrees to 60 degrees
Heat treatment is performed at a temperature of 0 ° C. to evaporate the solvent to form the conductive thin film 4 (FIG. 1C).

The electron emitting portion 5 is a high resistance crack formed in a part of the conductive thin film 4, and is formed by energization forming or the like. In addition, the cracks may contain conductive particles having a particle diameter of several Å to several hundred Å. The conductive fine particles contain at least a part of the elements forming the conductive thin film 4. Further, the electron emitting portion 5 and the conductive thin film 4 in the vicinity thereof may contain carbon or a carbon compound.

In the energization forming, electricity is applied between the device electrodes 2 and 3 by a power source (not shown) to locally destroy, deform or alter the conductive thin film 4 to form a portion having a changed structure. The site where the structure is locally changed is called an electron emitting portion 5 (FIG. 1 (d)). An example of the voltage waveform of energization forming is shown in FIG.

A pulse waveform is particularly preferable as the voltage waveform, and a voltage pulse having a constant pulse peak value is continuously applied (FIG. 6A) and a voltage pulse is applied while increasing the pulse peak value (FIG. 6A). 6 (b)). First, the case where the pulse peak value is a constant voltage (FIG. 6A) will be described.

In FIG. 6A, T1 and T2 are the pulse width and pulse interval of the voltage waveform, and T1 is 1 μsec to 1 μs.
0 msec, T2 is 10 μsec to 100 msec, and the peak value of the triangular wave (peak voltage during energization forming) is appropriately selected according to the form of the surface conduction electron-emitting device, and a suitable vacuum degree, for example, 10 ⁻⁵ torr. It is applied for several seconds to several tens of minutes in a vacuum atmosphere of a certain degree. The waveform applied between the device electrodes is not limited to the triangular wave, and a desired waveform such as a rectangular wave may be used. T1 and T in FIG. 6 (b)
2 is the same as that in FIG. 6A, and the crest value of the triangular wave (peak voltage during energization forming) is increased by, for example, about 0.1 V step and applied in an appropriate vacuum atmosphere.

The energization forming process in this case is a pulse rest period (a period other than T1) during the pulse interval T2.
In addition, when the resistance value is obtained by measuring the element current at a voltage that does not locally damage or deform the conductive thin film 4, for example, a voltage of about 0.1 V, when the resistance value shows a resistance of 1 MΩ or more, The energization forming is completed.

Next, it is desirable to perform a process called an activation process on the element for which the energization forming has been completed. The activation step is, for example, a vacuum degree of about 10 ⁻⁴ to 10 ⁻⁵ torr,
Similar to the energization forming, it is a process of repeatedly applying a voltage pulse having a constant pulse peak value. Carbon or a carbon compound derived from an organic substance existing in a vacuum is deposited on a conductive thin film, and a device current If and an emission current Ie. Is a process that significantly changes. The activation process ends while the device current If and the emission current Ie are being measured, for example, when the emission current Ie is saturated. Further, the applied voltage pulse is preferably an operation drive voltage (voltage for operating the completed electron-emitting device).

Here, the carbon or carbon compound is graphite (both single and polycrystalline) or amorphous carbon (a mixture of amorphous carbon and polycrystalline graphite), and its film thickness is 500Å. The following is preferable, and 300 Å or less is more preferable.

It is preferable to place the electron-emitting device thus produced in an atmosphere having a higher degree of vacuum than the degree of vacuum in the forming step and the activation step to drive it.
80 ° C. to 150 ° C. in an atmosphere with a higher degree of vacuum
It is desirable to drive operation after heating.

The degree of vacuum higher than the degree of vacuum in the forming step and the activation treatment step is, for example, about 10.
^The degree of vacuum is ^-6 torr or more, more preferably an ultra-high vacuum system, and the degree of vacuum is such that new carbon or carbon compound is hardly deposited on the conductive thin film. By doing so, the device current If and the emission current Ie can be stabilized.

The basic structure of the surface conduction electron-emitting device according to one embodiment of the present invention manufactured as described above is shown in FIG. FIG. 7A is a schematic plan view of the surface conduction electron-emitting device according to this embodiment, and FIG. 7B is a sectional view. Figure 7
In FIG. 1, 1 is a substrate, 2 and 3 are wirings functioning as device electrodes, 4 is a conductive thin film, and 5 is an electron emitting portion.

As the substrate 1, quartz glass, glass containing a small amount of impurities such as Na, soda lime glass, a glass substrate having SiO ₂ formed on the surface thereof, and a ceramics substrate such as alumina are used. A general conductor is used as a material for the device electrodes 2 and 3, for example, Ni, Cr, Au,
Metals or alloys such as Mo, W, Pt, Ti, Al, Cu, Pd, etc., printed conductors composed of metals such as Pd, Ag, Au, RuO ₂ , Pd-Ag or metal oxides and glass, In ₂ It is appropriately selected from transparent conductors such as O ₃ —SnO ₂ and semiconductor materials such as polysilicon.

The element electrode distance L is preferably several hundred Å to several hundred μm. Further, at the time of energization forming, it is desirable that the voltage applied between the element electrodes is low, and it is required that the electron emitting portion 5 be formed with good position reproducibility. is there. Width of the conductive thin film 4 (outer periphery of the recess 9 at the intersection of the device electrodes 2 and 3) W
1 is several μm to several hundreds μ from the resistance value of the electrode and the electron emission characteristic.
m is preferred. The film thickness d of the device electrodes 2 and 3 is several hundred Å
To a few μm are preferable.

The conductive thin film 4 is particularly preferably a fine particle film composed of fine particles in order to obtain good electron emission characteristics. The film thickness is appropriately set depending on the step coverage to the device electrodes 2 and 3, the resistance value between the device electrodes 2 and 3, and the energization forming conditions described later, etc., but preferably several Å to
It is several thousand Å, particularly preferably 10 Å to 500 Å. The sheet resistance value is 10 ³ to 10 ⁷ Ω / □.

The material forming the conductive thin film 4 is P
d, Pt, Ru, Ag, Au, Ti, In, Cu, C
metals such as r, Fe, Zn, Sn, Ta, W, Pb, Pd
Oxides such as O, SnO ₂ , In ₂ O ₃ , PbO, Sb ₂ O ₃ , HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ , YB
_4, GdB boride such as _{4, TiC, ZrC, HfC,} T
carbides such as aC, SiC, WC, TiN, ZrN, Hf
Examples thereof include nitrides such as N, semiconductors such as Si and Ge, and carbon.

The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure is not only a state in which the fine particles are dispersed and arranged but also a state in which the fine particles are adjacent to each other or overlap each other (island). (Including the shape), and the particle size of the fine particles is several Å to several thousand Å, preferably 10 Å to 200 Å.

Next, a method of manufacturing the image forming apparatus of the present invention will be described. The electron source substrate used in the image forming apparatus is formed by arranging a plurality of surface conduction electron-emitting devices on the substrate.

In the arrangement method of the surface conduction electron-emitting devices, the surface conduction electron-emitting devices are arranged in parallel, and the both ends of each device are connected by a ladder arrangement (hereinafter referred to as a ladder arrangement electron source substrate). ) Or a simple matrix arrangement (hereinafter referred to as a matrix-type arrangement electron source substrate) in which a pair of element electrodes of the surface conduction electron-emitting device are respectively connected with X-direction wiring and Y-direction wiring. An image forming apparatus having a ladder type electron source substrate requires a control electrode (grid electrode) which is an electrode for controlling the flight of electrons from the electron-emitting device.

The structure of the electron source of the present invention will be described below with reference to FIG. 81 is an electron source substrate, 82 is an X-direction wiring, 83 is a Y-direction wiring, 84 is a surface conduction electron-emitting device, and 85 is a connection.

In the figure, the substrate used as the electron source substrate 81 is the above-mentioned glass substrate or the like, and its shape is appropriately set according to the application. The m X-direction wirings 82 are DX1 and DX.
2, ..., DXm, and the Y-direction wiring 83 is DY
, DY2, ..., DYn consisting of n wirings. Further, the material, the film thickness, and the wiring width are appropriately set so that a substantially uniform voltage is supplied to many surface conduction elements. These m
The X-direction wirings 82 and the N Y-direction wirings 83 are electrically separated by an interlayer insulating layer (not shown) to form a matrix wiring (m and n are both positive integers).

An interlayer insulating layer (not shown) is formed on the entire surface of the substrate 81 on which the X-direction wiring 82 is formed or in a desired region of the substrate 81. The X-direction wiring 82 and the Y-direction wiring 83 are drawn out as external terminals. Furthermore, the device electrodes (not shown) of the surface conduction electron-emitting device 84 are connected to m X-direction wirings 82 and n.
It is electrically connected to the Y-direction wiring 83 of the book by a connecting wire 85. The surface conduction electron-emitting device may be formed either on the substrate or on an interlayer insulating layer (not shown).

Further, as will be described later in detail, the X direction wiring 82 is not shown for applying a scanning signal for scanning a row of the surface conduction electron-emitting devices 84 arranged in the X direction according to an input signal. Is electrically connected to the scanning signal generating means. On the other hand, a modulation signal generating means (not shown) for applying a modulation signal for modulating each row of the surface conduction electron-emitting devices 84 arranged in the Y direction to the Y-direction wiring 83 in accordance with an input signal. Is electrically connected to. Further, the drive voltage applied to each element of the surface conduction electron-emitting device is supplied as a difference voltage between the scanning signal and the modulation signal applied to the element.

In the above structure, individual elements can be selected and driven independently by using only simple matrix wiring.

Next, an image forming apparatus using the electron source having the simple matrix arrangement created as described above will be described with reference to FIGS. 9, 10 and 11. FIG. 9 is a basic configuration diagram of a display panel constituting the image forming apparatus, and FIG. 10 shows a fluorescent film. FIG. 11 is a block diagram of a drive circuit for displaying in accordance with an NTSC television signal, and represents an image forming apparatus including the drive circuit.

In FIG. 9, 81 is an electron source substrate on which an electron-emitting device is formed, 91 is a rear plate to which the electron source substrate 81 is fixed, 96 is a glass substrate 93 on which a fluorescent film 94 and a metal back 95 are formed. The formed face plate, 92 is a support frame, and the rear plate 91, the support frame 9
2 and the face plate 96 are coated with frit glass or the like, and the temperature is set to 400 to 500 degrees in the atmosphere or nitrogen to 10
The envelope 98 is configured by sealing by firing for more than a minute.
In FIG. 9, 84 corresponds to the electron emitting portion 5 in FIG. Reference numerals 82 and 83 denote an X-direction wiring and a Y-direction wiring connected to a pair of device electrodes of the surface conduction electron-emitting device.

The envelope 98 is composed of the face plate 96, the support frame 92 and the rear plate 91 as described above.
The rear plate 91 is provided mainly for the purpose of reinforcing the strength of the electron source substrate 81. Therefore, if the electron source substrate 81 itself has sufficient strength, the separate rear plate 91 is unnecessary, and Alternatively, the support frame 92 may be directly sealed, and the face plate 96, the support frame 92, and the electron source substrate 81 may constitute the envelope 98. Furthermore, by installing an atmospheric pressure resistant support member called a spacer between the face plate 96 and the rear plate 91, an envelope 98 having sufficient strength against atmospheric pressure can be obtained.

In FIG. 10, 102 is a phosphor. The fluorescent film 94 (FIG. 9) is composed of only the phosphor 102 in the case of monochrome, but in the case of a color fluorescent film, a black conductive material 101 called a black stripe or a black matrix depending on the arrangement of the phosphor 102 and the phosphor. 10
And 2. In the case of color display, the purpose of providing the black stripes and the black matrix is to make the color-separated portions between the respective phosphors 102 of the three primary color phosphors black so as to make color mixing inconspicuous and to prevent external light in the phosphor film 94. This is to suppress a decrease in contrast due to reflection. As the material of the black stripe, not only the material mainly containing graphite which is usually used well,
The material is not limited to this as long as it is a material having conductivity but little transmission and reflection of light. As a method of applying the phosphor to the glass substrate 93, a precipitation method or a printing method is used regardless of monochrome or color.

A metal back 95 (FIG. 9) is usually provided on the inner surface side of the fluorescent film 94 (FIG. 9). The purpose of the metal back is to improve the brightness by specularly reflecting the light toward the inner surface side of the light emission of the phosphor to the face plate 96 side, to act as an electrode for applying an electron beam acceleration voltage, This is to protect the phosphor from the damage caused by the collision of negative ions generated inside the container. The metal back can be manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film after manufacturing the fluorescent film, and then depositing A1 by vacuum evaporation or the like. The face plate 96 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 94 to further enhance the conductivity of the fluorescent film 94. When the above-mentioned sealing is performed, in the case of color, it is necessary to make the phosphors of the respective colors correspond to the electron-emitting devices, and it is necessary to perform sufficient alignment.

The envelope 98 passes through an exhaust pipe (not shown) and
The vacuum is set to about ^-7 torr and sealing is performed. In some cases, getter processing is performed to maintain the degree of vacuum of the envelope 98 after sealing. This is performed by heating a getter arranged at a predetermined position (not shown) in the envelope 98 by a heating method such as resistance heating or high-frequency heating immediately before or after the envelope 98 is sealed and vapor deposition. This is a process for forming a film. The getter usually has Ba or the like as a main component, and maintains the vacuum degree of, for example, 1 × 10 ⁻⁵ torr to 1 × 10 ⁻⁷ torr by the adsorption action of the vapor deposition film.

FIG. 11 is a block diagram showing a schematic configuration of a drive circuit for performing television display on the image forming apparatus configured by using an electron source having a simple matrix arrangement type substrate based on an NTSC television signal. Will be explained. 111 is the display panel, 112 is a scanning circuit, 113 is a control circuit, 114 is a shift register, 11
5 is a line memory, 116 is a sync signal separation circuit, 117
Is a modulation signal generator and Vx and Va are DC voltage sources.

The function of each unit will be described below. First, the display panel 111 is connected to an external electric circuit via terminals Dox1 to Doxm, terminals Doy1 to Doyn, and a high voltage terminal Hv. Of these terminals, the terminals Dox1 to Doxm sequentially drive electron sources provided in the display panel, that is, a group of surface conduction electron-emitting devices arranged in a matrix of m rows and n columns matrix by row (n elements). A scanning signal for application is applied.

On the other hand, a modulation signal for controlling the output electron beam of each element of the surface conduction electron-emitting devices of one row selected by the scanning signal is applied to the terminals Dy1 to Dyn. The high voltage terminal Hv is supplied with a DC voltage of, for example, 10 K [V] from the DC voltage source Va, which is sufficient to excite the phosphor into the electron beam output from the surface conduction electron-emitting device. It is an accelerating voltage for applying energy.

Next, the scanning circuit 112 will be described. The circuit is provided with m switching elements inside (schematically shown by S1 to Sm in the figure), and each switching element is an output voltage of the DC voltage source Vx or 0.
One of [V] (ground level) is selected and electrically connected to the terminals Dx1 to Dxm of the display panel 111. Each of the switching elements S1 to Sm has a control signal Tsca output from the control circuit 113.
It operates based on n, and actually, for example, FE
It can be configured by combining switching elements such as T.

It should be noted that the DC voltage source Vx is such that the drive voltage applied to an unscanned element is equal to or lower than the electron emission threshold voltage based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting element. It is set to output a constant voltage such that

The control circuit 113 has a function of matching the operation of each part so that an appropriate display is performed based on an image signal input from the outside. Based on the synchronization signal Tsync sent from the synchronization signal separation circuit 116 described below, Tscan, Tsft, and Tm
ry control signals are generated.

The synchronizing signal separating circuit 116 is a circuit for separating a synchronizing signal component and a luminance signal component from an externally input NTSC television signal, and can be constructed by using a frequency separating (filter) circuit. The synchronization signal separated by the synchronization signal separation circuit 116 is composed of a vertical synchronization signal and a horizontal synchronization signal, as is well known, but is shown here as a Tsync signal for convenience of explanation. On the other hand, the luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience, and the signal is input to the shift register 114.

The shift register 114 is for serially / parallel converting the DATA signals serially input in time series for each line of the image, and operates based on the control signal Tsft sent from the control circuit 113. (That is, the control signal Tsft corresponds to the shift register 11
It may be paraphrased as a shift clock of 4). The data for one line of the serial / parallel converted image (corresponding to the driving data for n electron-emitting devices) is Id1.
To Idn are output as n parallel signals from the shift register 114.

The line memory 115 is a storage device for storing data for one line of the image only for a required time, and stores the contents of Id1 to Idn as appropriate in accordance with the control signal Tmry sent from the control circuit 113. The stored contents are output as Id1 to Idn and input to the modulation signal generator 117.

The modulation signal generator 117 outputs the image data I
A signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices according to each of d1 to Idn, and an output signal thereof is applied to the surface conduction electron-emitting devices in the display panel 111 through terminals Doy1 to Doyn. To be done.

As described above, the electron-emitting device according to the present invention has the following basic characteristics with respect to the emission current Ie. That is, as described above, electron emission has a clear threshold voltage Vth, and electron emission occurs only when a voltage equal to or higher than Vth is applied.

For a voltage above the electron emission threshold value, the emission current also changes according to the change in the voltage applied to the device. The value of the electron emission threshold voltage Vth and the degree of change of the emission current with respect to the applied voltage may change by changing the material, the configuration, and the manufacturing method of the electron emitting element. I can say that.

That is, when a pulsed voltage is applied to this element, for example, electron emission does not occur even if a voltage below the electron emission threshold is applied, but when a voltage above the electron emission threshold is applied, the electron beam is Is output. At that time, first, the intensity of the output electron beam can be controlled by changing the peak value Vm of the pulse. Secondly, it is possible to control the total amount of charges of the electron beam output by changing the pulse width PW. Therefore, as a method of modulating the electron-emitting device according to the input signal, there are a voltage modulation method, a pulse width modulation method, and the like. To implement the voltage modulation method, the modulation signal generator 117 is used.
As a circuit, a circuit of a voltage modulation system is used which generates a voltage pulse of a fixed length but appropriately modulates the peak value of the pulse according to the input data. To implement the pulse width modulation method, the modulation signal generator 117 is a pulse width modulation method that generates a voltage pulse having a constant peak value but appropriately modulates the width of the voltage pulse according to the input data. It uses a circuit.

Through the series of operations described above, the image display device of the present invention can display television using the display panel 111. Although not particularly described in the above description, the shift register 114 and the line memory 1
15 may be of a digital signal type or an analog signal type, and the point is that the serial / parallel conversion and storage of the image signal may be performed at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the sync signal separation circuit 116 into a digital signal, which can be achieved by providing an A / D converter at the output section of 116. In connection with this, the circuit used for the modulation signal generator 117 is slightly different depending on whether the output signal of the line memory 115 is a digital signal or an analog signal.

First, the case of digital signals will be described.
In the voltage modulation method, for example, a well-known D / A conversion circuit may be used as the modulation signal generator 117, and an amplification circuit or the like may be added if necessary. In the case of the pulse width modulation method, the modulation signal generator 117 includes, for example, a high-speed oscillator, a counter that counts the number of waves output from the oscillator, and a comparator that compares the output value of the counter with the output value of the memory. It can be configured by using a circuit in which a (comparator) is combined. If necessary, an amplifier for voltage-amplifying the pulse-width-modulated modulation signal output from the comparator up to the drive voltage of the surface conduction electron-emitting device may be added.

Next, the case of an analog signal will be described.
In the voltage modulation method, for example, an amplification circuit using a well-known operational amplifier or the like may be used as the modulation signal generator 117, and a level shift circuit or the like may be added as necessary. In the case of the pulse width modulation method, for example, a well-known voltage controlled oscillation circuit (VCO) may be used, and an amplifier for amplifying the voltage to the drive voltage of the surface conduction electron-emitting device may be added if necessary. May be.

In the image display device completed as described above, the external terminals Dox1 to Dox are attached to each electron-emitting device.
Electrons are emitted by applying a voltage through xm, Doy1 to Doyn, and a high voltage is applied to the metal back 95 or the transparent electrode (not shown) through the high voltage terminal Hv to accelerate the electron beam and collide with the fluorescent film 94. An image can be displayed by exciting and emitting light.

The structure described above is a schematic structure necessary for manufacturing a suitable image forming apparatus used for display and the like, and the detailed parts such as the material of each member are not limited to the above contents. Instead, it is appropriately selected to suit the application of the image forming apparatus. Further, although the NTSC system is given as an example of the input signal, the input signal is not limited to this, and PAL, SEC
Various schemes such as an AM scheme may be used, and a TV signal (for example, a high-definition TV such as a MUSE scheme) including a number of scanning lines may be used.

Next, the ladder type electron source substrate described above and the image display device using the same will be described with reference to FIGS.
3 will be described. In FIG. 12, 121 is an electron source substrate, 122 is an electron-emitting device, and 123 Dx1 to Dx10.
Is a common wiring connected to the electron-emitting device. A plurality of electron-emitting devices 122 are arranged in parallel in the X direction on the substrate 121 (this is called a device row). A ladder-type electron source substrate is formed by arranging a plurality of such element rows on a substrate. By appropriately applying a drive voltage between the common wirings of each element row, each element row can be independently driven. That is, a voltage equal to or higher than the electron emission threshold may be applied to the element row that emits the electron beam, and a voltage equal to or lower than the electron emission threshold may be applied to the element row that does not emit the electron beam.
In addition, the common wirings Dx2 to Dx9 between the element rows are set to Dx2.
, Dx3, Dx4, and Dx5, which are adjacent to each other, may be connected together to form the same wiring.

FIG. 13 is a diagram showing the structure of an image forming apparatus provided with a ladder-type electron source. 131 is a grid electrode, 132 is a hole for passing electrons, 133
Are external terminals of the container made of Dox1, Dox2, ..., Doxm, and 134 are G1 and G connected to the grid electrode 131.
2, ..., Gn external terminals, and 135 is an electron source substrate in which the common wiring between the element rows is the same wiring as described above. The same reference numerals as those in FIG. 9 or FIG. 12 indicate the same members. A difference from the image forming apparatus having the simple matrix arrangement (FIG. 9) described above is that the grid electrode 131 is provided between the electron source substrate 121 and the face plate 96.

The grid electrode 131 is for modulating the electron beam emitted from the surface conduction electron-emitting device, and passes the electron beam through the stripe-shaped electrodes provided orthogonal to the ladder-shaped element rows. For this purpose, one circular opening 132 is provided for each element. The shape and installation position of the grid are not limited to those shown in FIG. For example, a large number of passage openings may be provided in a mesh shape as openings, and a grid may be provided around or near the surface conduction electron-emitting device. The external container terminal 133 and the grid external container terminal 134 are electrically connected to a control circuit (not shown).

In the image forming apparatus of this embodiment, a modulation signal for one line of an image is simultaneously applied to the grid electrode rows in synchronization with sequentially driving (scanning) the element rows one by one. This makes it possible to control the irradiation of the phosphor with each electron beam and display the image line by line.

Production Example 1 A surface conduction electron-emitting device was produced using a substrate (FIG. 8) which was wired in a matrix and formed with device electrodes by the method described above. FIG. 1 is a diagram showing the manufacturing method,
FIG. 3 shows a plan view and a sectional view taken along the line AA ′ of the surface conduction electron-emitting device manufactured by this manufacturing example.

(1) A quartz substrate is used as the insulating substrate 1,
This was thoroughly washed with an organic solvent and the like, and then dried at 120 ° C.

(2) The electrodes 2 and 3 made of Ni were formed on the substrate by using a general vacuum film forming technique and a photolithography technique. At this time, the gap distance L between the device electrodes
Is 2 μm, the electrode width W1 is 600 μm, and the thickness d is 1
It was 000Å.

(3) Next, an ink jet ejecting device using a piezoelectric element was used as the liquid drop applying device 6, and the liquid drop 8 of the organic palladium-containing solution (CCP-4230 manufactured by Okuno Chemical Industries Co., Ltd.) was first used for alignment. A droplet amount of 60 μm ³ was applied to the obliquely upper portion of the substrate 1.

(4) Next, the optical microscope 9 and a scale (not shown) process the intensity ratio signal of the reflected light of the droplets to measure the distance between the element electrodes to be applied and the droplets 8, After performing the alignment so that the conductive thin film 4 is formed in the center of the gap of the element electrodes, the above-mentioned organic palladium-containing solution is applied between all the element electrodes by using the droplet applying device 6 in a liquid amount of 60 μm ³ . Drops were applied one at a time.

(5) Next, heat treatment was performed at 300 ° C. for 10 minutes to form a fine particle film made of fine particles of palladium oxide (PdO), and the thin film 4 was obtained.

(6) Next, a voltage is applied between the electrodes 2 and 3, and the thin film 4 is energized (forming) to form the electron-emitting portion 5. In addition, the above (3)
The procedure (4) of applying droplets will be described in more detail below.

Drawing (droplet application) procedure <Substrate set> 1. Set the substrate on the stage and suck it (Suction button O
N). <Leveling the substrate> 2. While scanning the optical microscope 9 in the X direction relative to the substrate, the Θ knob (not shown) is adjusted so that the marker on the monitor (not shown) and the wiring in the Y direction are parallel to each other. 3. While the optical microscope 9 is scanned in the Y direction relative to the substrate, adjustment is performed using the Θ knob so that the marker on the monitor (not shown) and the center of the gap between the device electrodes are parallel to each other. <Discharge position check> 4. The droplet 8 is applied to a region where the element electrode is not formed in the substrate (such as the upper right corner of the substrate). 5. The position and shape of the droplet 8 are confirmed by the optical microscope 9 (here, when the droplet cannot be confirmed, the head or nozzle is changed or a recovery operation is performed). 6. Using an optical microscope 9 and a scale (not shown), the distance between the element electrodes to be applied and the droplet 8 is measured, and alignment is performed so that the center of the conductive thin film is formed at the center of the element electrode gap.

Using the electron source substrate thus manufactured,
As described above, the face plate 96, the support frame 92, and the rear plate 91 form an envelope 98, which is sealed to provide a display panel and a television display based on an NTSC television signal as shown in FIG. An image forming apparatus having a drive circuit for performing the above was manufactured.

As described above, the electron-emitting device manufactured by the manufacturing method of this manufacturing example not only showed good characteristics without any problems, but also provided droplets to form the thin film 4, thereby forming the thin film 4 by etching or the like. It was possible to omit the pattern forming step. Further, by aligning the droplets 8 applied by the same droplet applying device 6 to a desired place before forming the thin film 4, it is possible to reduce variations between elements and reduce uneven brightness and defects. The uniformity could be improved.

In addition, the intensity ratio information of the optical signal of this preparation example was obtained with the same effect whether the reflected light or the transmitted light.

Preparation Example 2 The element electrode width (W1) is 600 μm, and the element electrode interval (L
Substrate having device electrodes wired in a ladder shape in which 1) is 2 μm and the device electrode thickness is 1000 Å (Fig. 12).
A surface conduction electron-emitting device was manufactured by using the same method as in Manufacturing Example 1. A surface conduction electron-emitting device was fabricated on the.

Using the obtained electron source substrate, a face plate 96, a support frame 92, and a rear plate 91 are used to form an envelope 98 in the same manner as in Manufacturing Example 1, and an enclosure 98 is formed. Manufactured an image forming apparatus having a drive circuit for performing television display based on an NTSC television signal as shown in FIG. It was possible to obtain the same effects as those in Preparation Example 1.

Preparation Example 3 A method in which bubbles are generated by applying thermal energy and droplets are ejected using a substrate (see FIGS. 4 and 8) in which wirings are arranged in a matrix and the device electrodes are formed by the method described above. A surface conduction electron-emitting device was produced in the same manner as in Production Example 1 by using the inkjet device described in 1. above. That is, droplets were applied to the substrate on which the device electrodes and wirings were formed by the following procedure.

Drawing (droplet application) procedure <Substrate set> 1. Set the substrate on the stage and suck it (Suction button O
N). <Leveling the substrate> 2. While scanning the optical microscope in the X direction, adjust using the Θ knob so that the marker on the monitor and the upper wiring are parallel. 3. The substrate is scanned in the Y direction while observing the monitor of the optical microscope, and adjustment is performed using the Θ knob so that the marker on the monitor scans the center of the gap between the device electrodes. <Discharge position check> 4. A droplet is applied to a region in the substrate where the device electrode is not formed (near the alignment marker (not shown) whose position from the device electrode has already been measured on the upper right of the substrate). 5. Check the discharged droplets and their shapes with an optical microscope,
Write a mark on the center of the droplet on the monitor (when the droplet cannot be confirmed, first perform the recovery operation, and if the droplet cannot be confirmed, change the nozzle and the head in this order and repeat until confirming).

<Alignment> 6. The distance between the alignment marker and the droplet is measured using an optical microscope and a scale so that the center of the alignment marker and the center of the droplet match. 7. Calculate the position from the gap center of the element electrode at the start of ejection to the center of the alignment marker, and enter the X coordinate at the start of ejection. 8. While watching the monitor, operate the stage (10 μm step) so that the mark on the monitor placed in operation 5 comes to the center of the gap of the element electrode where the discharge starts, and the Y coordinate is adjusted. 9.1 Try line drawing (droplet application) and further align. <Drawing> 10.5 to 20 lines are drawn, and alignment is performed each time, and drawing is performed while correcting the displacement of the substrate.

Using the obtained electron source substrate, a face plate 96, a support frame 92, and a rear plate 91 are formed into an envelope 98 in the same manner as in Manufacturing Example 1 and sealed, and a display panel is further formed. Manufactured an image forming apparatus having a drive circuit for performing television display based on an NTSC television signal as shown in FIG. It was possible to obtain the same effects as those in Preparation Example 1.

Preparation Example 4 Ink jet apparatus of a system in which bubbles are generated by applying thermal energy and droplets are discharged by using a substrate (FIG. 12) which is wired in a ladder shape and in which element electrodes are formed by the method as described above. A surface conduction electron-emitting device was produced in the same manner as in Production Example 1. Using the obtained electron source substrate, a surface conduction electron-emitting device was manufactured by inkjet in the same manner as in Manufacturing Example 1.

Using the obtained electron source substrate, a face plate 96, a support frame 92, and a rear plate 91 are used to form an envelope 98 in the same manner as in Production Example 1 and sealing is performed to further display the display panel. Manufactured an image forming apparatus having a drive circuit for performing television display based on an NTSC television signal. It was possible to obtain the same effects as those in Preparation Example 3.

Preparation Example 5 This Preparation Example was prepared in the same manner as Preparation Example 1 except that the solution for forming the thin film 4 contained 0.05 wt% of Pd acetate in water.

As a result, the same effect as in Preparation Example 1 was obtained despite the difference in the contained solution. Using the obtained electron source substrate, a face plate 9 was produced in the same manner as in Production Example 1.
6, a support frame 92, and a rear plate 91 form an envelope 98 for sealing, a display panel, and a drive circuit for performing television display based on an NTSC system television signal as shown in FIG. An image forming apparatus having the above was manufactured. It was possible to obtain the same effects as those in Preparation Example 1.

Preparation Example 6 In this preparation example, the droplet amount is set to 30 μm ³ and two droplets (2
(Dots) were formed in the same manner as in Preparation Example 1. As a result, the same effect as in Preparation Example 1 was obtained. Therefore, there was an effect that a desired thin film could be obtained by applying a desired number of droplets.

Using the obtained electron source substrate, a face plate 96, a support frame 92, and a rear plate 91 are formed into an envelope 98 in the same manner as in Manufacturing Example 1, and an envelope 98 is formed. Manufactured an image forming apparatus having a drive circuit for performing television display based on an NTSC television signal as shown in FIG. It was possible to obtain the same effects as those in Preparation Example 1.

Preparation Example 7 This Preparation Example is Preparation Example 1 except that the amount of droplets is 120 μm ^3.
Created in the same way as

As a result, it was found that the same effect as in Preparation Example 1 was obtained, so that a desired thin film can be obtained by applying a desired droplet amount.

Using the obtained electron source substrate, a face plate 96, a support frame 92, and a rear plate 91 are formed into an envelope 98 in the same manner as in Manufacturing Example 1, and a display panel is further formed. Manufactured an image forming apparatus having a drive circuit for performing television display based on an NTSC television signal. It was possible to obtain the same effects as those in Preparation Example 3.

Manufacturing Example 8 In this manufacturing example, before forming the thin film 4 row by row (one column) in the device electrode in which droplets 8 to be provided for alignment are arranged and arranged in a matrix as shown in FIG. It was prepared in the same manner as in Preparation Example 1 except that the alignment was performed.

As a result, not only the same effects as those in Preparation Example 1 were obtained, but also the element variation could be made smaller than that in Preparation Example 1. Therefore, if a droplet for alignment is applied a desired number of times, the desired thin film with less variation is obtained. It turned out that there is an effect that can be obtained.

Using the obtained electron source substrate, a face plate 96, a support frame 92, and a rear plate 91 were used to form an envelope 98 in the same manner as in Production Example 1 and sealing was performed to further display the display panel. Manufactured an image forming apparatus having a drive circuit for performing television display based on an NTSC television signal as shown in FIG. Not only were the same effects as in Preparation Example 1 obtained, but a uniform image with less brightness unevenness could be obtained than in Preparation Example 1.

Preparation Example 9 This Preparation Example was prepared in the same manner as Preparation Example 1 except that the droplet 8 to be provided for alignment was formed on an arbitrary wiring as shown in FIG.

As a result, it was found that the same effect as that of the first manufacturing example was obtained, and therefore, by applying droplets for alignment a desired number of times at a desired location, a thin film with less variation was obtained.

Using the obtained electron source substrate, a face plate 96, a support frame 92, and a rear plate 91 are formed into an envelope 98 in the same manner as in Manufacturing Example 1 to perform sealing, and a display panel is further provided. Manufactured an image forming apparatus having a drive circuit for performing television display based on an NTSC television signal as shown in FIG. It was possible to obtain the same effects as those in Preparation Example 1.

[0105]

As described above, according to the present invention,
In the step of applying the material solution in which the material of the fine particle film (electroconductive thin film) having the electron emitting portion is dispersed or dissolved in the form of droplets, before applying the droplets between the element electrodes, to a region other than between the element electrodes By applying the droplets, it is possible to confirm whether the droplets are applied and observe the shape of the droplets, and it is possible to reduce product defects. Further, since it is possible to perform the alignment in advance by using the droplets applied to the area other than the area between the element electrodes and then apply the droplets between the element electrodes, it is possible to improve the alignment accuracy and reduce the variation of the elements. effective. Further, according to the present invention, since the film thickness of the electron emission film can be controlled and formed by the droplet amount and the droplet number, the manufacturing process can be reduced. Further, since droplets can be applied by the inkjet method, there is an effect that a minute amount of droplets of about several tens ng or more controlled in the range of about ten and several ng to several μg can be applied.

By the above method, the fine particle film can be formed with high alignment accuracy without using the photolithography technique. Further, the image forming apparatus produced by this method can reduce the cost and improve the yield, and the variation in the fine particle film is small, so that the luminance is uniform.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing a method of manufacturing a basic surface conduction electron-emitting device according to an embodiment of the present invention.

FIG. 2 is a schematic plan view and a sectional view showing a basic pattern of a device manufactured by the method of FIG.

3A and 3B are a plan view and a cross-sectional view showing a deposition pattern of a surface conduction electron-emitting device according to Manufacturing Example 1 of the present invention.

4A and 4B are a plan view and a cross-sectional view showing an imparted pattern of a surface conduction electron-emitting device according to Manufacturing Example 8 of the present invention.

5A and 5B are a plan view and a cross-sectional view showing a deposition pattern of a surface conduction electron-emitting device according to Manufacturing Example 9 of the present invention.

FIG. 6 is a graph showing an example of a voltage waveform of energization forming according to the present invention.

FIG. 7 is a schematic plan view and a sectional view showing an example of the configuration of a basic surface conduction electron-emitting device of the present invention.

FIG. 8 is a schematic diagram showing an electron source having a simple matrix arrangement.

FIG. 9 is a schematic configuration diagram of an image forming apparatus using an electron source having a simple matrix arrangement.

FIG. 10 is a pattern diagram of a fluorescent film.

FIG. 11 is a block diagram of a drive circuit for displaying according to an NTSC television signal.

FIG. 12 is a schematic view showing an electron source arranged in a ladder.

FIG. 13 is a schematic configuration diagram of an image forming apparatus using an electron source arranged in a ladder.

FIG. 14 is a schematic plan view of a conventional electron-emitting device.

FIG. 15 is a schematic configuration diagram of a conventional electron-emitting device.

[Explanation of symbols]

1: substrate, 2, 3: element electrode, 4: conductive thin film, 5: electron emission part, 6: droplet applying device, 7: droplet, 8: alignment droplet, 9: optical microscope, 81: electron Source substrate, 8
2: X-direction wiring, 83: Y-direction wiring, 84: Surface conduction electron-emitting device, 85: Connection, 91: Rear plate, 9
2: support frame, 93: glass substrate, 94: fluorescent film, 95:
Metal back, 96: face plate, 97: high voltage terminal, 98: envelope, 101: black conductive material, 102: phosphor, 111: display panel, 112: scanning circuit, 113:
Control circuit, 114: shift register, 115: line memory, 116: synchronization signal separation circuit, 117: modulation signal generator, Vx and Va: DC voltage source, 121: electron source substrate, 122: electron emission element, 123: Dx1 ~ Dx10
Is a common wiring for wiring the electron-emitting device, 13
1: grid electrode, 132: holes through which electrons pass, 133 (Dox1, Dox2 ... Doxm): external terminals of the container, 134 (G1, G2, ... Gn): container Outer terminal, 135: electron source substrate.

Claims (8)

[Claims] 1. A method for manufacturing a plurality of electron-emitting devices, each of which has an electron-emitting portion formed on a part of a conductive thin film connecting a pair of device electrodes, on an insulating substrate. A plurality of pairs of element electrodes are formed on the substrate, a solution containing a material for forming a conductive film is applied between the pair of element electrodes in the form of droplets, and the droplets are dried to form each pair of elements. While forming a conductive thin film that connects the electrodes,
The surface conduction electron, characterized in that the solution is applied in a droplet state to a region other than between the paired device electrodes at least once before the liquid droplets are applied between the paired device electrodes. Method of manufacturing an emitting device. 2. The insulating substrate is provided by applying a droplet to a region other than between the paired device electrodes, irradiating the droplet with light, and using an intensity ratio signal of light that transmits or reflects the droplet. 2. The manufacturing method according to claim 1, further comprising: aligning, and applying a droplet between the paired device electrodes after the aligning step. 3. In the step of applying a droplet between the pair of device electrodes, the film thickness of the conductive thin film formed is controlled by the size and / or the number of the applied droplets. The manufacturing method according to claim 1 or 2, which is characterized. 4. The manufacturing method according to claim 1, wherein the droplets are applied by an inkjet method. 5. The manufacturing method according to claim 4, wherein the ink jet method is a method of generating bubbles by applying thermal energy and discharging droplets. 6. A method of manufacturing an electron source substrate in which a plurality of electron-emitting devices are arranged on an insulating substrate and wirings between the electron-emitting devices and terminals for voltage application to the devices are formed. A method for manufacturing an electron source substrate, comprising manufacturing the element by the method according to claim 1. 7. When forming the element electrodes, one is continuously connected to the insulating substrate to form a column-directional wiring, and the other is crossed through the insulating layer to continuously connect to each other. The manufacturing method according to claim 6, wherein the wiring is directional wiring. 8. An electron-emitting device as an electron source, a voltage application terminal to the device, a light-emitting body that receives and emits electrons emitted from the device, and a voltage applied to the device based on an external signal. 6. A method for manufacturing an image forming apparatus, comprising: a drive circuit for controlling an image forming apparatus, wherein the electron-emitting device is manufactured by the method according to claim 1. .