JPH09200077A - Composite high frequency component - Google Patents

Composite high frequency component

Info

Publication number
JPH09200077A
JPH09200077A JP8004864A JP486496A JPH09200077A JP H09200077 A JPH09200077 A JP H09200077A JP 8004864 A JP8004864 A JP 8004864A JP 486496 A JP486496 A JP 486496A JP H09200077 A JPH09200077 A JP H09200077A
Authority
JP
Japan
Prior art keywords
circuit
component
frequency
composite
frequency component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8004864A
Other languages
Japanese (ja)
Inventor
Kouji Furuya
Mitsuhide Katou
Norio Nakajima
Koji Tanaka
Ken Tonegawa
Tatsuya Ueda
達也 上田
規巨 中島
謙 利根川
充英 加藤
浩二 田中
孝治 降谷
Original Assignee
Murata Mfg Co Ltd
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Mfg Co Ltd, 株式会社村田製作所 filed Critical Murata Mfg Co Ltd
Priority to JP8004864A priority Critical patent/JPH09200077A/en
Priority claimed from US08/783,480 external-priority patent/US5999065A/en
Publication of JPH09200077A publication Critical patent/JPH09200077A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/201Filters for transverse electromagnetic waves
    • H01P1/203Strip line filters
    • H01P1/2039Galvanic coupling between Input/Output
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/10Auxiliary devices for switching or interrupting
    • H01P1/15Auxiliary devices for switching or interrupting by semiconductor devices

Abstract

(57) Abstract: Provided is a composite high frequency component which reduces the area and volume occupied by the equipment to be mounted, improves the flexibility of circuit layout, and eliminates the need for an impedance matching circuit. A composite high frequency component includes a multilayer substrate.
And a diode D1 constituting the high frequency switch component 1,
D2 and the circuit board 12 are included. On the outer surface of the multilayer substrate 11, a transmitter circuit external electrode TX1 and a receiver circuit external electrode R are provided.
X1, an antenna outer electrode ANT1, control outer electrodes Vc11, Vc21, and a ground potential outer electrode G2 are formed, and strip lines L1 to L3, capacitors C1 to C6, and a low-pass filter forming the high-frequency switch 1 are formed inside. Strip line L that constitutes part 2
4, L5 and capacitors C7 to C9 are formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite high frequency component, and more particularly to a composite high frequency component formed by connecting a high frequency component such as a high frequency switch component and a filter component.

[0002]

2. Description of the Related Art As shown in FIG. 10, a high frequency switch component, which is a high frequency component, is used to switch the connection between a transmitter circuit TX and an antenna ANT and the connection between a receiver circuit RX and an antenna ANT in a digital mobile phone or the like. Used.

As shown in FIG. 11, the high frequency switch component 1 includes an antenna ANT, a transmitting circuit TX and a receiving circuit RX.
Connected to. The anode of the diode D1 is connected to the transmission circuit TX via the capacitor C1. The anode of the diode D1 is connected to the ground potential via the series circuit of the distributed constant line L1 and the capacitor C2. The line length of the distributed constant line L1 is set to be λ / 4 or less, where λ is the wavelength of the transmission signal from the transmission circuit TX. The control terminal Vc1 is connected to the connection point between the distributed constant line L1 and the capacitor C2.
A control circuit for switching the high frequency switch component 1 is connected to the control terminal Vc1.
The cathode of the diode D1 is connected to the capacitor C3.
Is connected to the antenna ANT via. Further, a series circuit of the distributed constant line L2 and the capacitor C4 is connected to both ends (between the anode and the cathode) of the diode D1.

A capacitor C connected to the antenna ANT
3, a receiving circuit RX is further connected via a series circuit of a distributed constant line L3 and a capacitor C5. The line length of the distributed constant line L3 is also λ / 4, like the distributed constant line L1.
It is set to be as follows. In addition, the distributed constant line L2
The anode of the diode D2 is connected to the connection point between the capacitor C5 and the capacitor C5. The cathode of the diode D2 is connected to the ground potential via the capacitor C6.
Further, the control terminal Vc2 is connected to the connection point between the diode D2 and the capacitor C6. The control terminal Vc2, like the control terminal Vc1,
A control circuit for switching the high frequency switch component 1 is connected.

In the case of transmitting using the high frequency switch component 1 thus constructed, the control terminal Vc
A positive bias voltage is applied to 1 and the control terminal Vc
A negative bias voltage is applied to 2. Since this voltage acts as a forward bias voltage on the diodes D1 and D2, the diodes D1 and D2 are turned on. At this time, the direct current component is cut by the capacitors C1 to C6, and only the circuit including the diodes D1 and D2 has the control terminal Vc.
1, the voltage added to Vc2 is applied. Therefore, the distributed constant line L3 is grounded by the diode D2 and resonates at the transmission frequency, and the impedance becomes almost infinite. Therefore, the transmission signal from the transmission circuit TX is hardly transmitted to the reception circuit RX side and the capacitor is not transmitted. It is transmitted to the antenna ANT via C1, the diode D1, and the capacitor C3. Since the distributed constant line L1 is grounded via the capacitor C2, it resonates at the transmission frequency, the impedance becomes almost infinite, and the transmission signal is prevented from leaking to the ground potential side.

On the other hand, during reception, the control terminal Vc
A negative bias voltage is applied to 1 and the control terminal Vc
A positive bias voltage is applied to 2. Since this voltage acts as a reverse bias voltage on the diodes D1 and D2, the diodes D1 and D2 are turned off, and the received signal from the antenna ANT passes through the capacitor C3, the distributed constant line L3, and the capacitor C5, and the receiving circuit. It is transmitted to RX, and hardly transmitted to the transmitter circuit TX side.

As described above, the high frequency switch component 1 can switch the transmission and reception signals by controlling the bias voltage applied to the control terminals Vc1 and Vc2.

The distributed constant line L2 and the capacitor C4
The series circuit is a diode D1 and a capacitor C when it is off.
4 and a parallel resonance circuit that resonates with the inductance component of the distributed constant line L2, and resonates at a frequency matched with the frequency of the received signal, thereby turning off the diode when the diode D1 is off. It is used to increase the impedance at the connection point between D1 and the distributed constant line L2 and reduce insertion loss and reflection loss.

[0009]

However, in a composite high-frequency component in which a filter component is connected to the above-mentioned high-frequency component for use, the high-frequency component and the filter component have conventionally been designed and manufactured separately. There is a problem that a large occupied area and volume are required on the circuit board, and the flexibility of circuit arrangement is deteriorated.

There is also a problem that an impedance matching circuit must be newly added to the high frequency component and the filter component in order to perform impedance matching between the high frequency component and the filter component.

Further, there is a problem that extra time is required for designing the impedance matching circuit.

The present invention has been made in order to solve such a problem, and reduces the area and volume occupied by the equipment to be mounted, improves the flexibility of circuit arrangement, and provides an impedance matching circuit. It is an object to provide a composite high frequency component that is unnecessary.

[0013]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention forms a high frequency component composed of a plurality of circuit elements and at least one of an internal electrode and a distributed constant line. The filter component is composed of a multilayer substrate formed by laminating a plurality of dielectric layers, and at least one of circuit elements constituting the high-frequency component is mounted on the circuit substrate together with the multilayer substrate, and the rest of the circuit components are provided. Is built in or mounted on the multilayer substrate.

Further, the high frequency component is a high frequency switch component.

Further, the filter component is a low-pass filter component.

According to the composite high frequency component of the present invention, since at least one of the circuit elements constituting the high frequency component is built in the multilayer substrate constituting the filter component, the overall size is reduced.

Further, since the circuit of the high frequency component and the circuit of the filter component can be combined and designed simultaneously, it is possible to perform the design in which the circuit of the high frequency component and the circuit of the filter component are impedance-matched.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. In the embodiments, the same or equivalent parts as those of the conventional example are designated by the same reference numerals, and detailed description thereof will be omitted.

FIG. 1 shows a circuit diagram of an embodiment of a composite high frequency component according to the present invention. In the composite high frequency component 10, a filter component, for example, a Butterworth type low-pass filter component 2 is connected between the transmission circuit TX and one end of the capacitor C1 of the high frequency switch component 1. Here, the low pass filter component 2 is composed of distributed constant lines L4, L5 and capacitors C7, C8, C9. Note that the connection relationship of the low-pass filter component 2 is well known, and the description thereof is omitted.

FIG. 2 shows a side view of the composite high frequency component 10. The composite high-frequency component 10 is formed by mounting a high-frequency device that constitutes the high-frequency switch 1, for example, diodes D1 and D2 on the circuit board 12 together with the multilayer board 11. As shown in FIG. 3, the multilayer substrate 11 is formed by sequentially stacking the first dielectric layer 13 to the fifteenth dielectric layer 27 from above, and the capacitors C1 to C6 constituting the high frequency switch 1 and the distribution. Constant lines L1 to L3
And the low-pass filter component 2 is incorporated.

Nothing is mounted on the first dielectric layer 13. Further, on the second dielectric layer 14, internal electrodes, that is, capacitor electrodes C51, and on the third dielectric layer 15, capacitor electrodes C11, C21, C31, and fourth electrodes.
On the dielectric layer 16 of the capacitor electrodes C12, C2
2, C32, the capacitor electrodes C13, C33, C61 on the fifth dielectric layer 17, and the capacitor electrodes C15, C35, C63 on the seventh dielectric layer 19, and the tenth dielectric layer. On the body layer 22, the capacitor electrode C41 is
On the 14th dielectric layer 26, a capacitor electrode C71,
C81 and C91 are formed, respectively.

Further, on the sixth dielectric layer 18, the capacitor electrodes C14, C34, C62, the distributed constant line, that is, the strip line L31, and the eighth dielectric layer 20 are provided.
Strip lines L41 and L51 are provided on the top, and strip lines L11 and L21 are provided on the twelfth dielectric layer 24.
Are respectively formed.

On the ninth, eleventh, thirteenth, and fifteenth dielectric layers 21, 23, 25, 27, internal electrodes, that is, ground electrodes G1 are formed, respectively.

Further, on the lower surface of the fifteenth dielectric layer 27 (denoted by 27u in FIG. 3), the transmitter circuit external electrode TX1, the receiver circuit external electrode RX1, the antenna external electrode ANT1, and the control electrode are provided. External electrodes Vc11, Vc2
2. The ground potential external electrode G2 is formed.

Then, signal lines (not shown) and via holes (not shown) are formed at necessary locations in the first to fifteenth dielectric layers 13 to 27, and the outer surface of the multilayer substrate 11 is formed. Also, external electrodes (not shown) are formed on the circuit board 12. Capacitors C1 to 1 constituting the high frequency switch 1
C6, the multilayer substrate 11 in which the distributed constant lines L1 to L3 and the low-pass filter component 2 are incorporated, and the diode D
1 and D2 are mounted on the circuit board 12, and the multilayer board 11 and the diodes D1 and D2 are appropriately connected. This allows
A composite high frequency component 10 equivalent to the circuit configuration shown in FIG. 1 can be constructed.

A dielectric ceramic green sheet is prepared for manufacturing a multi-layer substrate that constitutes such a composite high frequency component. Then, a metal paste is printed on the dielectric ceramic green sheet according to the shape of each internal electrode, distributed constant line, and signal line. Then
By laminating the dielectric ceramic green sheets on which the metal paste is printed in a predetermined shape and firing them, a multilayer substrate is formed in which the dielectric layers are laminated.

A metal paste is printed on the outer surface of this multi-layer substrate, and by baking it, external electrodes are formed. At this time, the multi-layer substrate may be formed by stacking the dielectric ceramic green sheets, printing a metal paste on the shape of the external electrodes, and firing them integrally.

As described above, in the above-described embodiment, the capacitor, the distributed constant line and the filter component constituting the high frequency component are built in one multilayer substrate formed by laminating a plurality of dielectric layers. , The overall size can be reduced. Therefore, the occupied area on the circuit board
The volume can be reduced.

Further, since the circuit of the high frequency component and the circuit of the filter component can be combined and designed simultaneously, the impedance matching of the circuit of the high frequency component and the circuit of the filter component can be performed. Therefore, it is not necessary to newly add an impedance matching circuit, and the circuit can be simplified.

Further, the time for designing the impedance matching circuit can be eliminated.

There are various types of high-frequency switches other than the above-mentioned circuit configuration, for example, Japanese Patent Laid-Open No. 6-1.
97042, JP-A-6-197043, JP-A-7-
There is a high frequency switch having a circuit configuration described in No. 74672.

Further, in the above embodiment, the case where the diode is used as the high frequency device has been described, but a transistor, an FET or the like may be used instead of the diode.

Further, although the case where the strip line is used as the distributed constant line has been described, a micro strip line, a coplanar line or the like may be used instead of the strip line.

Although the case where the capacitor and the strip line are built in the multilayer substrate has been described, a resistance component such as a printing resistor may be built in depending on the circuit.

Further, although the case where the diode is directly mounted on the circuit board has been described, a resistor or a resistance component such as a chip resistor may be directly mounted depending on the circuit.

Further, as the connection relationship between the high frequency component and the filter component, the case where the low pass filter component 2 is connected between the transmission circuit TX and the high frequency switch component 1 has been described, but the reception circuit RX or the antenna ANT and the high frequency switch component are connected. Even if any low-pass filter component 2 is connected between 1 and 2, the same effect as the above-mentioned embodiment can be obtained.

For example, as shown in FIG. 4, the antenna AN
When connecting the low-pass filter component 2 between the T and the high-frequency switch component 1, as shown in FIG. 5, when connecting the low-pass filter component 2 between the receiving circuit RX and the high-frequency switch component 1, as shown in FIG. When the low-pass filter component 2 is connected between the transmitter circuit TX and the high-frequency switch component 1 and between the antenna ANT and the high-frequency switch component 1, as shown in FIG. 7, between the transmitter circuit TX and the high-frequency switch component 1. When connecting the low-pass filter component 2 between the receiving circuit RX and the high-frequency switch component 1, as shown in FIG. 8, between the receiving circuit RX and the high-frequency switch component 1,
When the low-pass filter component 2 is connected between the antenna ANT and the high-frequency switch component 1, as shown in FIG. 9, between the transmitter circuit TX and the high-frequency switch component 1, between the receiver circuit RX and the high-frequency switch component 1, and the antenna. ANT
Between the high-frequency switch component 1 and the low-pass filter component 2
And the like.

Further, although the case where the low-pass filter component is used as the filter component connected to the high-frequency component has been described, it may be combined with the high-frequency component by using the high-pass filter component, the band-pass filter component, and the band elimination filter component. it can.

[0039]

According to the composite high frequency component of the present invention, at least one of the circuit elements constituting the high frequency component is mounted on the circuit board together with the multilayer substrate, and the rest of the circuit elements and the filter component are built in the multilayer substrate. Alternatively, since it is mounted, the overall size can be reduced. Therefore, the occupied area and volume of the mounted device can be reduced.

Further, since the circuit of the high frequency component and the circuit of the filter component can be combined and designed at the same time, it is possible to perform the design in which the circuit of the high frequency component and the circuit of the filter component are impedance-matched. Therefore, it is not necessary to newly add an impedance matching circuit, and the circuit can be simplified.

Further, the time for designing the impedance matching circuit can be eliminated.

[Brief description of drawings]

FIG. 1 is a circuit diagram of an embodiment according to a composite high frequency component of the present invention.

FIG. 2 is a side view of the composite high frequency component of FIG.

FIG. 3 is an exploded perspective view of a multi-layer substrate that constitutes the composite high-frequency component of FIG.

FIG. 4 is a circuit configuration diagram of a modified example of the composite high frequency component of the present invention.

FIG. 5 is a circuit configuration diagram of another modified example of the composite high-frequency device of the present invention.

FIG. 6 is a circuit configuration diagram of still another modified example of the composite high-frequency device of the present invention.

FIG. 7 is a circuit configuration diagram of still another modified example of the composite high-frequency device of the present invention.

FIG. 8 is a circuit configuration diagram of still another modified example of the composite high-frequency device of the present invention.

FIG. 9 is a circuit configuration diagram of still another modified example of the composite high-frequency device of the present invention.

FIG. 10 is a circuit configuration diagram of a conventional composite high frequency component.

FIG. 11 is a circuit diagram of a conventional high frequency component.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 High-frequency component (high-frequency switch component) 2 Filter component (low-pass filter component) 10 Composite high-frequency component 11 Multilayer substrate 12 Circuit board 13-27 Dielectric layer C11-C15, C21, C22, C31-C35, C
41, C51, C61 to C63, C71, C81, C9
1, G1 internal electrode L11, L12, L31, L41, L51 distributed constant line D1, D2, L1 to L5, C1 to C9 circuit element

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Mitsuhide Kato 2-10-10 Tenjin, Nagaokakyo-shi, Kyoto Murata Manufacturing Co., Ltd. (72) Inventor Koji Tanaka 2-26-10 Tenjin, Nagaokakyo, Kyoto Murata Manufacturing Co., Ltd. (72) Inventor Tatsuya Ueda 2-26-10 Tenjin Tenjin, Nagaokakyo, Kyoto Stock Company Murata Manufacturing Co., Ltd.

Claims (3)

[Claims]
1. A multi-layered substrate formed by laminating a high frequency component including a plurality of circuit elements and a plurality of dielectric layers in which at least one of an internal electrode and a distributed constant line is formed. A composite high frequency device comprising a filter component, wherein at least one of circuit elements constituting the high frequency component is mounted on the circuit board together with the multilayer substrate, and the rest of the circuit elements is built in or mounted on the multilayer substrate. parts.
2. The composite high frequency component according to claim 1, wherein the high frequency component is a high frequency switch component.
3. The composite high frequency component according to claim 1, wherein the filter component is a low pass filter component or a band pass filter component.
JP8004864A 1996-01-16 1996-01-16 Composite high frequency component Pending JPH09200077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8004864A JPH09200077A (en) 1996-01-16 1996-01-16 Composite high frequency component

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP8004864A JPH09200077A (en) 1996-01-16 1996-01-16 Composite high frequency component
US08/783,480 US5999065A (en) 1995-08-24 1997-01-14 Composite high-frequency component
KR1019970001108A KR100261751B1 (en) 1996-01-16 1997-01-16 Composite high frequency component
CN97102290A CN1060884C (en) 1996-01-16 1997-01-16 Composite high-frequency element
EP19970100647 EP0785590A1 (en) 1996-01-16 1997-01-16 Composite high-frequency component

Publications (1)

Publication Number Publication Date
JPH09200077A true JPH09200077A (en) 1997-07-31

Family

ID=11595548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8004864A Pending JPH09200077A (en) 1996-01-16 1996-01-16 Composite high frequency component

Country Status (4)

Country Link
EP (1) EP0785590A1 (en)
JP (1) JPH09200077A (en)
KR (1) KR100261751B1 (en)
CN (1) CN1060884C (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177850B1 (en) * 1998-01-13 2001-01-23 Murata Manufacturing Co., Ltd. Two frequency filter comprising an inductance device, a resonator, and a switching device
JP2002064401A (en) * 2000-06-09 2002-02-28 Hitachi Metals Ltd High-frequency switch module
US6731184B1 (en) 1999-07-29 2004-05-04 Murata Manufacturing Co., Ltd. High frequency switching component
US6831528B2 (en) 2000-12-28 2004-12-14 Matsushita Electric Industrial Co., Ltd. High-frequency switching module and high-frequency apparatus equipped with the same
US6937845B2 (en) 2000-03-31 2005-08-30 Murata Manufacturing Co., Ltd. High-frequency module and radio device using the same
WO2008108201A1 (en) * 2007-03-06 2008-09-12 Nihon Dempa Kogyo Co., Ltd. High-frequency voltage-controlled oscillation circuit
US7466211B2 (en) 2005-04-28 2008-12-16 Murata Manufacturing Co., Ltd. High-frequency switching module and frequency-characteristic adjusting method for high-frequency circuit
WO2019124211A1 (en) * 2017-12-18 2019-06-27 日本電信電話株式会社 Ic chip
WO2019131077A1 (en) * 2017-12-25 2019-07-04 株式会社村田製作所 Switch module and communication device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69835378T2 (en) * 1997-12-03 2007-03-08 Hitachi Metals, Ltd. Multiband high-frequency switching module
JP3255105B2 (en) * 1998-01-22 2002-02-12 株式会社村田製作所 High frequency composite parts
DE69837841T2 (en) * 1998-07-06 2008-01-24 Hitachi Metals, Ltd. Composite circuit and switching device to do so
EP1650865B1 (en) 1998-10-27 2009-10-21 Murata Manufacturing Co., Ltd. Composite high frequency component and mobile communication device including the same
WO2002017504A1 (en) * 2000-08-22 2002-02-28 Hitachi Metals, Ltd. Laminated high-frequency switch module
DE10102201C2 (en) 2001-01-18 2003-05-08 Epcos Ag Electrical switching module, switching module arrangement and use of the switching module and the switching module arrangement
CZ11323U1 (en) * 2001-05-04 2001-08-15 Marian Ing. Váňa Switching electronic relay
DE10246098A1 (en) 2002-10-02 2004-04-22 Epcos Ag circuitry
CN106252792B (en) * 2016-09-22 2018-04-13 中山香山微波科技有限公司 A kind of absorption RF switch

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2763664B2 (en) * 1990-07-25 1998-06-11 日本碍子株式会社 Wiring board for distributed constant circuit
JP2876925B2 (en) 1992-12-26 1999-03-31 株式会社村田製作所 High frequency switch
JPH06197043A (en) 1992-12-26 1994-07-15 Murata Mfg Co Ltd High frequency switch
JP3296038B2 (en) 1993-09-03 2002-06-24 株式会社村田製作所 High frequency switch
JP3291913B2 (en) * 1994-05-17 2002-06-17 株式会社村田製作所 High frequency switch

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177850B1 (en) * 1998-01-13 2001-01-23 Murata Manufacturing Co., Ltd. Two frequency filter comprising an inductance device, a resonator, and a switching device
US6731184B1 (en) 1999-07-29 2004-05-04 Murata Manufacturing Co., Ltd. High frequency switching component
US7183875B2 (en) 1999-07-29 2007-02-27 Murata Manufacturing Co., Ltd. High frequency switching component with electrostatic surge elimination
US6937845B2 (en) 2000-03-31 2005-08-30 Murata Manufacturing Co., Ltd. High-frequency module and radio device using the same
JP2002064401A (en) * 2000-06-09 2002-02-28 Hitachi Metals Ltd High-frequency switch module
JP4596300B2 (en) * 2000-06-09 2010-12-08 日立金属株式会社 High frequency switch module
US6831528B2 (en) 2000-12-28 2004-12-14 Matsushita Electric Industrial Co., Ltd. High-frequency switching module and high-frequency apparatus equipped with the same
US7466211B2 (en) 2005-04-28 2008-12-16 Murata Manufacturing Co., Ltd. High-frequency switching module and frequency-characteristic adjusting method for high-frequency circuit
WO2008108201A1 (en) * 2007-03-06 2008-09-12 Nihon Dempa Kogyo Co., Ltd. High-frequency voltage-controlled oscillation circuit
US7956698B2 (en) 2007-03-06 2011-06-07 Nihon Dempa Kogyo Co., Ltd High-frequency voltage-controlled oscillation circuit
WO2019124211A1 (en) * 2017-12-18 2019-06-27 日本電信電話株式会社 Ic chip
WO2019131077A1 (en) * 2017-12-25 2019-07-04 株式会社村田製作所 Switch module and communication device

Also Published As

Publication number Publication date
CN1167367A (en) 1997-12-10
EP0785590A1 (en) 1997-07-23
KR970060575A (en) 1997-08-12
KR100261751B1 (en) 2000-07-15
CN1060884C (en) 2001-01-17

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