JPH09199402A - Scanning aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a scanning aligner with a scanning shutter which can selectively expose a part of a reticle pattern. SOLUTION: Exposure light L transfers only a belt-like region of a reticle pattern of a reticle R onto a wafer W at a time. By scanning the reticle R and the wafer W synchronously, the entire reticle pattern is transferred on the wafer W. When a part of the reticle pattern is selectively exposed for manufacturing a prototype, a scanning shutter 15 which has a shutter opening larger than the effective beam width F of the exposure light L is let to scan synchronously with the reticle R by winding up one end of the shutter 15 around a rotary drum of a shutter drive 16.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning type exposure apparatus for projecting a reticle pattern on a wafer by limiting it to a rectangular band area and scanning both the reticle and the wafer to transfer the entire reticle pattern onto the wafer. It is a thing.

[0002]

2. Description of the Related Art In recent years, as semiconductor devices have become more highly integrated, the reticle pattern of a reticle, which is an original plate, is projected onto a wafer or the like by limiting the reticle pattern to a rectangular band-shaped area. A so-called scanning type exposure apparatus has been developed which transfers the entire reticle pattern onto a wafer by synchronously scanning.

This has a reduction projection system with a magnification of ¼ to ⅕ similarly to the reduction projection exposure apparatus conventionally called a stepper, and the exposure light irradiation area is an aperture composed of four blades. The scanning stage is provided to limit the rectangular band area to one dimension and to scan the reticle and the wafer one-dimensionally at a speed ratio equal to the reduction magnification of the reduction projection system.

FIG. 13 shows a general scanning type exposure apparatus E ₀ , which includes a light source optical system 110, a reticle scanning stage 120, and a reduction projection system arranged along the optical axis (Z axis) of the exposure light N. 130 and a wafer scanning stage 140. The reticle scanning stage 120 and the wafer scanning stage 140 are linear drive devices such as linear motors on the bases 121 and 141, respectively, in a predetermined axis (X axis) direction orthogonal to the optical axis. The reticle scanning stage 12 can be freely reciprocated by
0 and the position of the wafer scanning stage 140 in the X-axis direction are reflected by the mirrors 122 and 142 and the reduction projection system 13, respectively.
It is measured by the laser interferometers 123 and 143 which receive the reflected light from the reference surface 130a on the lens barrel of 0, and is fed back to the above-mentioned linear drive device.

The base 121 of the reticle scanning stage 120
The base 141 of the wafer scanning stage 140 is the vibration absorbing device 1
The first and second support bodies 12 are individually provided via 24 and 144.
5, 145, and a holding frame 131 holding the reduction projection system 130 is supported by a third support body 135 via a vibration absorbing device 134. This is because the driving forces of the rectilinear driving devices of the reticle scanning stage 120 and the wafer scanning stage 140 interfere with each other, and the reaction force of these driving forces propagates to the reduction projection system 130 and deteriorates its optical characteristics. It is to prevent it.

The light source optical system 110 has a pair of condenser lenses 112 and 113 for converging the exposure light N generated from the light source 111 on the reticle S on the reticle scanning stage 120 and an aperture 114, and the aperture 114 is exposed. The irradiation area N ₀ of the reticle S by the light N is set to Y as shown in FIG.
It is composed of four blades 114a for limiting the rectangular area that is long in the axial direction. The exposure light N that has passed through the aperture 114 is projected onto the rectangular projection area N ₀ of the reticle S by the reduction projection system 1.
After passing through 30, the image is projected onto the wafer Q on the wafer scanning stage 140, and a similar strip-shaped region is exposed.

The reticle scanning stage 120 and the wafer scanning stage 140 are mounted on the base 12 by the above-mentioned linear drive device.
1, 141 are reciprocally moved along the guide device, and the scanning speeds of the reticle scanning stage 120 and the wafer scanning stage 140 are controlled to be constant during the exposure of the reticle pattern by the exposure light N. That is, the scanning speed of the reticle scanning stage 120 is controlled by the following control pattern.

[0008] As shown in FIGS. 14 and 15, the acceleration shown right of the reticle scanning stage 120 at time T ₁ when the center O of the reticle scanning stage 120 i.e. reticle S is positioned at the acceleration start position P ₁ Started,
The scanning speed V is the right end B _{2 of the} reticle pattern B in the figure.
Reaches a predetermined value V ₀ before reaching the left end N ₁ of the band-shaped irradiation region N ₀ by the exposure light N, that is, before the time T ₂ at which the center O of the reticle S reaches the exposure start position P _2. Scanning is performed until at least the left end B _{1 in} the drawing of the reticle pattern B reaches the right end N ₂ in the drawing of the irradiation area N ₀ , that is, the center O of the reticle S reaches the exposure end position P ₃ at time T _3. Maintained at speed V ₀ ,
After that, the vehicle is accelerated in the opposite direction and decelerated, and reaches the stop position P ₄ at time T ₄ , where the reverse or leftward acceleration is started. Further, the scanning speed of the wafer scanning stage 140 is also controlled by a control pattern similar to this.

Since the exposure light N is divergent light, when it reaches the condenser lens 113 on the downstream side of the aperture 114, the beam width D is larger than the aperture size of the aperture 114.
Expand to.

[0010]

However, according to the above-mentioned conventional technique, it is difficult to selectively expose only a part of the reticle pattern in the manufacturing stage of the prototype before the semiconductor device is manufactured as a product. There is an unsolved problem.

That is, in the case of manufacturing a prototype with a normal stepper, a part of the reticle pattern can be selectively exposed simply by moving the aperture blade to limit the aperture size. , Provide a mask to cover the unnecessary part of the reticle pattern and scan it synchronously with the reticle scanning stage, or move the aperture to the operating position only when the necessary part of the reticle pattern enters the exposure light irradiation area. It is required to add a mechanism for moving it and otherwise retracting it to the inoperative position.

However, in order to scan the mask covering the unnecessary portion of the reticle pattern synchronously with the reticle scanning stage, a linear driving device similar to the reticle scanning stage must be provided, and the entire device becomes large and large. It's inevitable that it gets complicated. In addition, the method of moving the aperture also requires a large acceleration force and a long stroke in order to move the aperture forward and backward in synchronization with the scanning of the reticle scanning stage. However, if the stroke for advancing / retreating the aperture is lengthened, the entire aperture becomes large.

The present invention has been made in view of the above-mentioned unsolved problems of the prior art, and is of a small size capable of selectively projecting a part of a reticle pattern or the like onto a wafer while scanning the reticle. An object of the present invention is to provide a scanning type exposure apparatus equipped with a high-performance scanning shutter device.

[0014]

In order to achieve the above object, a scanning exposure apparatus according to the present invention comprises a light source for generating exposure light for partially projecting a reticle pattern of a reticle onto a wafer, the reticle and the wafer. A reticle scanning stage and a wafer scanning stage for respectively synchronously scanning, and a film-like scanning shutter having a shutter opening having an opening width larger than the effective beam width of the exposure light,
It is characterized in that the scanning shutter has a rotation driving means for scanning the scanning shutter across the optical path of the exposure light by winding one end thereof.

Further, a light source for generating exposure light for partially projecting the reticle pattern of the reticle onto the wafer, a reticle scanning stage and a wafer scanning stage for synchronously scanning the reticle and the wafer, respectively, and the exposure light respectively. A pair of film-shaped scanning shutters having a shutter opening with an opening width larger than the effective beam width of the above, and a rotation driving unit for scanning each scanning shutter by winding one end thereof across the optical path of the exposure light. It may be a scanning type exposure apparatus.

It is preferable that the rotary driving means has a pair of rotary drums around which both ends of the scanning shutter are respectively wound, a motor for rotating one of the rotary drums, and a constant tension spring provided between the rotary drums.

The motor preferably has a flat coil which is integral with one of the rotating drums, and a multi-pole magnet which faces the flat coil.

The support for supporting the multi-pole magnet may be separated from the main body of the scanning exposure apparatus.

[0019]

In a normal exposure cycle for exposing a product wafer, the scanning shutter is fixed while the shutter opening of the scanning shutter is located in the optical path of the exposure light and does not block the exposure light. When a part of the reticle pattern of the reticle is selectively transferred to the wafer for making a prototype, the rotation driving means is driven while the shutter opening is on the side of the optical path of the exposure light to drive the scanning shutter. The winding is started and the acceleration of the scanning shutter is controlled so that the shutter opening is projected only on the required part of the reticle pattern.

That is, scanning is performed so that the leading end and the trailing end of the shutter opening projected on the reticle overlap with the leading end and the trailing end of the required portion of the reticle pattern of the reticle being scanned, and scan at the same scanning speed. Controls the scanning speed of the shutter. If the width of the shutter opening projected onto the reticle is larger than the required width of the reticle pattern, the scanning shutter is accelerated during exposure, and in the opposite case, the scanning shutter is decelerated during exposure to open the scanning shutter. The time can be matched to the width of the required portion of the reticle pattern.

Since the film-shaped scanning shutter is wound to scan it, a long stroke for scanning the scanning shutter is not required, and the scanning shutter is lightweight, so that the energy of the rotary drive means is increased. The consumption amount is small, and the driving force necessary for accelerating the scanning shutter can be reduced by increasing the winding amount of the scanning shutter.

Further, in the case of a scanning type exposure apparatus provided with a pair of such scanning shutters, the shutter opening of one scanning shutter is positioned in the optical path of the exposure light so that the leading end of the necessary portion of the reticle pattern can be positioned at the other end. The leading edge of the shutter opening of the scanning shutter is projected, and the trailing edge of the shutter opening of the one scanning shutter is projected onto the trailing edge of a required portion of the reticle pattern while the shutter opening is positioned in the optical path of the exposure light. can do. In this case, it is not necessary to accelerate or decelerate each scanning shutter during exposure even if the opening width of the shutter opening of each scanning shutter is different from the width of the required portion of the reticle pattern. There is an advantage that control becomes simple.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described with reference to the drawings.

FIG. 1 shows a scanning type exposure apparatus E ₁ using a scanning shutter apparatus according to one embodiment, which comprises a light source optical system 10 arranged along the optical axis (Z axis) of the exposure light L, It has a reticle scanning stage 20, a reduction projection system 30, and a wafer scanning stage 40. The reticle scanning stage 20 and the wafer scanning stage 40 are mounted on respective bases 21, 41 on a predetermined axis (X) orthogonal to the optical axis. The reticle scanning stage 20 and the wafer scanning stage 40 can be moved back and forth by a linear drive device such as a linear motor in the axial direction.
The positions in the axial direction are measured by laser interferometers 23 and 43 that receive the reflected light from the mirrors 22 and 42 and the reflected light from the reference surface 30a on the lens barrel of the reduction projection system 30, respectively. To be fed back.

The pedestal 21 of the reticle scanning stage 20 and the pedestal 41 of the wafer scanning stage 40 are vibration absorbing devices 24 and 44.
The holding frame 31 that holds the reduction projection system 30 is individually supported by the first and second supports 25 and 45 via the vibration absorbing device 34 and is supported by the third support 35. .
This is because the driving forces of the rectilinear driving devices of the reticle scanning stage 20 and the wafer scanning stage 40 interfere with each other, and the reaction force of these driving forces propagates to the reduction projection system 30 and deteriorates its optical characteristics. It is to prevent it.

The light source optical system 10 applies the exposure light L generated by the light source 11 to the reticle R on the reticle scanning stage 20.
A pair of condenser lenses 12 and 13 and an aperture 1
4, and the aperture 14 is composed of four blades 14a for limiting the exposure light L with which the reticle R is irradiated to a light beam having a rectangular cross section that is long in the Y-axis direction. Exposure light L
Projects a rectangular strip area of the reticle R onto the wafer W on the wafer scanning stage 40 through the reduction projection system 30, and exposes a similar strip area.

The reticle scanning stage 20 and the wafer scanning stage 40 are mounted on the bases 21, 4 by the above-mentioned linear drive device.
1. The reticle scanning stage 20 is reciprocally moved along the guide device on the upper surface of the reticle 1 during the exposure of the reticle pattern by the exposure light L.
The scanning speed of the wafer scanning stage 40 is controlled to be constant. That is, the scanning speed of the reticle scanning stage 20 is controlled by the following control pattern.

As shown in FIG. 7, when the center of the reticle scanning stage 20, that is, the reticle R is located at the acceleration start position, the reticle scanning stage 20 starts to accelerate, for example, to the right in the figure at time T ₁ , and its scanning is started. The speed V is
As shown by the alternate long and short dash line, the right end of the reticle pattern is controlled to reach a predetermined value V ₀ before the time T ₂ at which the right end of the exposure light L reaches the left end of the band-shaped irradiation area, and at least the left end of the reticle pattern is exposed light. The scanning speed is maintained at V ₀ until time T ₃ when the right end of the irradiation area of L is reached, and thereafter, it is accelerated in the opposite direction and decelerated, and then stopped at time T ₄ and the reverse or leftward acceleration is started. The speed control similar to the above is performed in the opposite direction. Further, the scanning speed of the wafer scanning stage 40 is also controlled by a control pattern similar to this.

The light source optical system 10 selectively scans the optical path of the exposure light L on the downstream side of the aperture 14 in synchronization with the scanning cycle of the reticle scanning stage 20.
5 The scanning shutter 15 is used when selectively exposing only a part of the reticle pattern of the reticle R (hereinafter referred to as “necessary part A”) at the stage of making a prototype of a semiconductor device, and is a shutter drive that is a rotation driving means. Device 16 allows reticle scanning stage 20
As will be described later, the exposure light L is controlled so that the exposure light L passes through the shutter opening C of the scanning shutter 15 only when the necessary portion A of the reticle pattern enters the exposure light L irradiation area.

As shown in FIG. 2, the scanning shutter 15 is provided with a rectangular shutter opening C on a thin film plate.
Both ends of the thin plate are wound around the first and second rotating drums 16a and 16b of the shutter driving device 16, and these are rotated to move the shutter opening C in the scanning direction (X-axis direction) of the reticle scanning stage 20 or the like. The width in the X-axis direction, which is the opening width of the shutter opening C, that is, the edge C facing in the X-axis direction.
_The distance between ₁ and C ₂ is set to be larger than the beam width F in the X-axis direction which is the effective beam width of the exposure light L when passing through the shutter opening C. When exposing a product wafer, the center of the shutter opening C in the X-axis direction is the exposure light L.
The exposure light L is prevented from being blocked by the scanning shutter 15.

As shown in FIGS. 3 to 5, the shutter driving device 16 includes first and second rotary drums 16a and 16a.
A frame 16c that rotatably supports b, a flat coil unit 16d that is integral with the first rotary drum 16a, a multipolar magnet 16e that faces the flat coil unit 16d, and a rotation angle of the first rotary drum 16a are measured. Encoder 16f
And both ends of the first and second rotary drums 16a and 1a, respectively.
It has a constant tension spring 16g wound around the shaft of 6b, and the constant tension spring 16g acts to apply a constant tension to the scanning shutter 15 so that it does not sag.

The multipole magnet 16e is fixed to a fourth support (not shown). When a current is supplied to the flat coil unit 16d and each flat coil is excited, a thrust is generated in the circumferential direction of the first rotary drum 16a to rotationally drive the rotary drum 16a. The scanning speed of the scanning shutter 15 is controlled by changing the rotation speed of the first rotary drum 16a by changing the amount of current supplied to the flat coil unit 16d.
This is performed as follows.

When the leading end of the required portion A of the reticle pattern crosses the irradiation area of the exposure light L, the leading end C ₂ of the shutter opening C projected on the reticle R has the same scanning speed V ₀ as the reticle R and the exposure light L. Is scanned across the optical path of the exposure light L and the trailing edge of the required portion A of the reticle pattern is the exposure light L.
The trailing edge C ₁ of the shutter opening C projected on the reticle R when traversing the optical path of the reticle R has the same scanning speed V ₀ as the reticle R.
The scanning speed of the scanning shutter 15 is controlled so as to cross the optical path of the exposure light L.

Since the exposure light L is divergent light, it goes without saying that the beam width F of the exposure light L when passing through the shutter opening C in the X-axis direction is larger than the opening width of the aperture 14.

The control pattern of the scanning speed of the scanning shutter 15 will be described in more detail with reference to FIGS. 6 and 7. In FIG. 6, it is assumed that the reticle scanning stage 20 scans to the left in the drawing and the scanning shutter 15 scans in the opposite direction. In a normal exposure cycle,
For example, the center of the shutter opening C of the scanning shutter 15 is fixed so as to match the optical axis of the exposure light L, and the scanning shutter 15 does not block the exposure light L. As described above, the reticle scanning stage 20 starts accelerating at time T ₁ , reaches a predetermined scanning speed V ₀ by time T ₂ , and reaches time T 2.
_The scanning speed V ₀ is maintained until ₃ and after the time T ₃ , the speed is reduced and stopped at the time T ₄ . The leading edge (left edge) of the reticle pattern of the reticle R enters the irradiation area of the exposure light L at time T ₂ , and the trailing edge (right edge) of the reticle pattern exits from the irradiation area of the exposure light L at time T _3. The exposure of the entire pattern is completed.

Reticle R at the trial production stage of semiconductor products
In order to expose only a part of the reticle pattern, that is, the necessary part A, the scanning shutter 15 is accelerated to the right in the figure at time t ₀ almost in synchronization with the start of acceleration of the reticle scanning stage 20, as shown by the solid line in FIG. By the time t ₁ after the reticle scanning stage 20 reaches a predetermined scanning speed V ₀ , the leading end (left end) A ₁ of the required portion A of the reticle pattern reaches the right end of the irradiation area of the exposure light L. The scanning speed of the scanning shutter 15 is accelerated to a predetermined opening speed. That is, at the time t ₁ , the leading edge A ₁ of the required portion A of the reticle pattern reaches the right edge of the irradiation area of the exposure light L, and at the same time, the shutter opening C of the scanning shutter 15 is reached.
When the leading end (right end) C ₂ of the exposure light L reaches the left end of the exposure light L (see (a) of FIG. 6), the leading end of the shutter opening projected on the reticle R causes the irradiation area of the exposure light L to fall on the reticle R. The scanning shutter 15 is controlled to traverse at the same scanning speed as the scanning speed V _0, and the scanning shutter 15 is predetermined until the leading end A ₁ of the required portion A of the reticle pattern reaches the left end of the irradiation region of the exposure light L at least at time t _2. Keep the opening speed of. At least from time t ₁ to time t _2, the shutter opening projected onto the reticle R and the reticle R both scan at the scanning speed V ₀ (see FIG. 6B).

After time t ₂ , the scanning shutter 15 is accelerated, and again at time t ₃ until the trailing edge (right edge) A ₂ of the required portion A of the reticle pattern reaches the right edge of the irradiation area of the exposure light L. The scanning shutter 15 is decelerated to the predetermined opening speed, and at time t ₃ , the trailing edge A ₂ of the required portion A of the reticle pattern reaches the right edge of the irradiation area of the exposure light L, and at the same time, the shutter opening C of the scanning shutter 15 is opened. The trailing edge (left edge) C ₁ is controlled so as to reach the left edge of the exposure light L (see (c) of FIG. 6). At time t ₄ , the scanning shutter 15 travels at the predetermined opening speed until the trailing edge A ₂ of the required portion A of the reticle pattern reaches the left edge of the irradiation area of the exposure light L and the trial exposure is completed.

In the present embodiment, the scanning shutter 15
Since the opening width of the shutter opening C, that is, the distance between both ends C ₁ and C ₂ is larger than the width of the required portion A of the reticle pattern, the scanning shutter 15 should be accelerated between time t ₂ and time t _3. At the time when the left end C ₁ of the shutter opening C of the scanning shutter 15 reaches the left end of the exposure light L, the trailing end A ₂ of the required portion A of the reticle pattern is the exposure light L.
It coincides with the time t ₃ when the right end of the irradiation area is reached. On the contrary, if the opening width of the shutter opening C of the scanning shutter 15 is smaller than the width of the required portion A of the reticle pattern, the scanning shutter 15 may be decelerated between time t ₂ and time t ₃ .

If necessary, the scanning shutter 15 may be provided with a plurality of shutter openings having different opening widths, and these shutter openings may be selectively used.

According to the present embodiment, the scanning shutter 15 is a thin film plate and is wound up to scan the scanning shutter 15. Therefore, the mask for covering unnecessary portions of the reticle R is reticle-scanned. There is no need for a complicated, long-stroke drive unit or the like as in the case of scanning using a scanning stage similar to the stage 20 or the like,
The scanning speed of the scanning shutter 15 can be easily controlled, and in addition, both ends C of the shutter opening C of the scanning shutter 15 can be controlled.
₁ and C ₂ scan shutter 1 only for the time when it crosses the exposure light L
Since only the scanning speed of 5 is strictly controlled, the control pattern is simple and the speed gradient at the time of acceleration and deceleration of the scanning shutter 15 can be arbitrarily set. Therefore, it is possible to reduce the accelerating force of the scanning shutter 15 as much as possible and reduce the disturbance given to the reticle scanning stage 20, the reduction projection system 30, and the like.

Further, the multi-pole magnet 16e is connected to the scanning type exposure apparatus E.
_1st thru | or 3rd support body 25,3 which comprises the main body of 1
By fixing to a fourth support member separated from 5, 45, the reaction force of the driving force of the scanning shutter 15 causes the reticle scanning stage 20, the reduction projection system 30, and the wafer scanning stage 40.
Can be prevented from being impaired and the accuracy of the printing transfer of the scanning exposure apparatus E ₁ is impaired by the scanning of the scanning shutter 15. A wind hole 16h is provided in the frame 16c of the shutter driving device 16 so as not to block the exposure light L.

FIG. 8 shows a scanning type exposure apparatus E ₂ according to a modification.
This is one in which a pair of scanning shutters 55 and 56 having a shutter opening with a larger opening width than the shutter opening C of the scanning shutter 15 are provided upside down. The scanning shutters 55, 56 are driven in the same direction by shutter driving devices 55a, 56a similar to the shutter driving device 16 of the scanning shutter 15, and the speed control of the scanning shutters 55, 56 is performed as follows.

When exposing a wafer to be a product, both scanning shutters 55 and 56 are fixed such that both shutter openings are located in the optical path of the exposure light L and the exposure light L is not blocked. To exposing only a portion i.e. necessary portion A of the reticle pattern of the reticle R in the experimental stage of semiconductor products, as shown in FIG. 10, the time t ₀ almost synchronism with the acceleration start of the reticle scanning stage 20
In acceleration starts shown rightward of the first scan shutter 55, leading end of the necessary portion A of the reticle pattern at time t ₁ after the reticle scanning stage 20 has reached the predetermined scanning velocity V ₀ (left) A ₁ is The first scanning shutter 55 is accelerated to a predetermined opening speed until the right end of the exposure area of the exposure light L is reached, and the right end of the exposure area of the exposure light L is preceded by the necessary portion A of the reticle pattern at time t _1. At the same time when the edge A ₁ reaches, the leading edge (right edge) G _{2 of} the first shutter opening projected on the reticle R reaches the left edge of the exposure light L (see (a) in FIG. 9), and at least time t ₂ Then, the first scanning shutter 55 is kept at the predetermined opening speed until the leading end A ₁ of the required portion A of the reticle pattern reaches the left end of the irradiation area of the exposure light L. That is, at least from time t ₁ to time t _2, the shutter opening of the first scanning shutter 55 projected on the reticle R and the reticle R both scan at the scanning speed V ₀ (see FIG. 9B).

After the time t ₂ , the first scanning shutter 55 is gradually decelerated, while the second scanning shutter 56 is accelerated to the predetermined opening speed. At time t ₃ , the trailing edge A ₂ of the required portion A of the reticle pattern is exposed to the exposure light L.
Is controlled so that the trailing end (left end) H ₁ of the shutter opening of the second scanning shutter 56 reaches the left end of the exposure light L at the same time when it reaches the right end of the irradiation area (see (c) of FIG. 9). At time t ₄ , the second scanning shutter 56 operates at the predetermined opening speed until the trailing edge A ₂ of the required portion A of the reticle pattern reaches the left edge of the irradiation area of the exposure light L and the exposure for trial production is completed. To run. Note that at time t ₁ , the second
The leading end H ₂ of the shutter opening of the scanning shutter 56 of the scanning shutter 56 is located on the right side of the optical path of the exposure light L, and the first end at the time t ₄
The trailing end G ₁ of the scanning shutter 55 is located on the left side of the optical path of the exposure light L. This modification has the advantages that both scanning shutters do not need to be accelerated to above the predetermined opening speed and speed control is simple.

Next, an embodiment of a method for manufacturing a semiconductor device using the above-mentioned exposure apparatus will be described. FIG. 11 shows a flow of manufacturing a semiconductor device (semiconductor chip such as IC or LSI, liquid crystal panel, CCD, thin film magnetic head, micromachine, etc.). In step S11 (circuit design), a semiconductor device circuit is designed. Step S12
In (mask production), a mask on which a designed circuit pattern is formed is produced. On the other hand, step S13 (wafer manufacture)
Then, a wafer that is a substrate is manufactured using a material such as silicon. Step S14 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step S15 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer manufactured in step S14, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). including. In step S16 (inspection), step S1
An inspection such as an operation confirmation test and a durability test of the semiconductor device manufactured in 5 is performed. Through these steps, the semiconductor device is completed and shipped (step S17).
Is done.

FIG. 12 shows a detailed flow of the wafer process. In step S21 (oxidation), the surface of the wafer is oxidized. In step S22 (CVD), an insulating film is formed on the wafer surface. In step S23 (electrode formation), electrodes are formed on the wafer by vapor deposition. Step S2
In step 4 (ion implantation), ions are implanted into the wafer. In step S25 (resist processing), a photosensitive agent is applied to the wafer. In step S26 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the exposure apparatus described above. In step S27 (developing), the exposed wafer is developed. In step S28 (etching), portions other than the developed resist image are removed. In step S29 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device which has been conventionally difficult to manufacture.

[0047]

Since the present invention is configured as described above, it has the following effects.

A part of the reticle pattern can be selectively projected onto the wafer while scanning the reticle.
Since the film-shaped scanning shutter is wound to scan the reticle in synchronism with the reticle, the size of the entire apparatus is not increased and the scanning shutter does not require a large driving force.

[Brief description of drawings]

FIG. 1 is a schematic elevational view showing a scanning exposure apparatus according to an embodiment.

FIG. 2 is a diagram illustrating a scanning shutter of the apparatus shown in FIG.

FIG. 3 is an elevational view showing a scanning shutter of the apparatus of FIG. 1 and a driving unit thereof.

FIG. 4 is a perspective view of the scanning shutter of the apparatus shown in FIG. 1 and its drive section as viewed from the front side.

5 is a perspective view of the scanning shutter of the apparatus shown in FIG. 1 and its drive section as viewed from the back side.

FIG. 6 is a diagram for explaining scanning by a scanning shutter of the apparatus shown in FIG.

7 is a graph showing a control pattern of a scanning speed of a scanning shutter of the apparatus shown in FIG.

FIG. 8 is a schematic elevational view showing a scanning exposure apparatus according to a modification.

9 is a diagram for explaining scanning by a scanning shutter of the apparatus shown in FIG.

10 is a graph showing a control pattern of the scanning speed of the scanning shutter of the apparatus shown in FIG.

FIG. 11 is a flowchart showing manufacturing steps of a semiconductor device.

FIG. 12 is a flowchart showing a wafer process.

FIG. 13 is a schematic elevational view showing a conventional example.

FIG. 14 is a diagram illustrating scanning of a reticle scanning stage.

FIG. 15 is a graph showing a control pattern of the scanning speed of the reticle scanning stage.

[Explanation of symbols]

 10 Light source optical system 14 Aperture 15, 55, 56 Scanning shutter 16, 55a, 56a Shutter drive device 16a, 16b Rotating drum 16d Flat coil unit 16e Multipole magnet 16g Constant tension spring 20 Reticle scanning stage 30 Reduction projection system 40 Wafer scanning stage

Claims (5)

[Claims] 1. A light source for generating exposure light for partially projecting a reticle pattern of a reticle onto a wafer, a reticle scanning stage and a wafer scanning stage for synchronously scanning the reticle and the wafer, respectively, and the exposure light Scanning exposure having a film-like scanning shutter having a shutter opening with an opening width larger than the effective beam width, and a rotation driving means for scanning the scanning shutter across the optical path of the exposure light by winding one end thereof. apparatus. 2. A light source for generating exposure light for partially projecting a reticle pattern of a reticle onto a wafer, a reticle scanning stage and a wafer scanning stage for synchronously scanning the reticle and the wafer, and the exposure light, respectively. A pair of film-shaped scanning shutters having a shutter opening with an opening width larger than the effective beam width of the above, and a rotation driving unit for scanning each scanning shutter by winding one end thereof across the optical path of the exposure light. Scanning exposure equipment. 3. The rotary drive means has a pair of rotary drums around which both ends of the scanning shutter are respectively wound, a motor for rotating one of the rotary drums, and a constant tension spring provided between the rotary drums. The scanning exposure apparatus according to claim 1 or 2. 4. The scanning exposure apparatus according to claim 3, wherein the motor has a flat coil that is integral with one of the rotating drums, and a multi-pole magnet that faces the flat coil. 5. The scanning exposure apparatus according to claim 4, wherein the support body supporting the multi-pole magnet is separated from the main body of the scanning exposure apparatus.