JPH09181356A - Ultraviolet light source - Google Patents
Ultraviolet light sourceInfo
- Publication number
- JPH09181356A JPH09181356A JP33979695A JP33979695A JPH09181356A JP H09181356 A JPH09181356 A JP H09181356A JP 33979695 A JP33979695 A JP 33979695A JP 33979695 A JP33979695 A JP 33979695A JP H09181356 A JPH09181356 A JP H09181356A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- light source
- current
- blue light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、分光分析装置の光
源、光通信装置の光源、植物促成栽培用の光源、紫外線
硬化性接着剤の硬化用光源として使用される紫外線光源
に関するものである。TECHNICAL FIELD The present invention relates to an ultraviolet light source used as a light source for a spectroscopic analysis device, a light source for an optical communication device, a light source for plant forcing cultivation, and a light source for curing an ultraviolet curable adhesive.
【0002】[0002]
【従来の技術】上記紫外線光源としては、SOR(sync
hrotron orbital radiation )の電子ビームから得られ
るSOR光源や、キセノン管、水銀ランプなどのアーク
ランプ光源が知られている。2. Description of the Related Art As an ultraviolet light source, SOR (sync
SOR light sources obtained from electron beams of hrotron orbital radiation) and arc lamp light sources such as xenon tubes and mercury lamps are known.
【0003】[0003]
【発明が解決しようとする課題】しかし、上記SOR光
源は、コヒーレントの高い良好な光源を得ることができ
るが、装置の規模が大きく安易に使用する光源としては
不向きであった。またアークランプ光源は、管の取扱い
や大きさ、発熱対策などにより、小型化が難しく、また
価格を下げることは難しかった。However, although the above SOR light source can obtain a good light source with high coherence, it is unsuitable as a light source which is large in scale and easy to use. In addition, it is difficult to downsize the arc lamp light source due to the handling of the tube, its size, and measures against heat generation, and it is difficult to reduce the price.
【0004】そこで、本発明は、取扱いが容易で、小型
化、低価格を実現できる紫外線光源を提供することを目
的としたものである。Therefore, an object of the present invention is to provide an ultraviolet light source which is easy to handle and can be made compact and inexpensive.
【0005】[0005]
【課題を解決するための手段】前述した目的を達成する
ために、本発明のうち請求項1記載の紫外線光源は、発
光源として青色発光ダイオードを使用し、この青色発光
ダイオードに定格電流値より大きな電流値の直流電流を
印加する構成としたことを特徴とするものである。In order to achieve the above-mentioned object, the ultraviolet light source according to claim 1 of the present invention uses a blue light emitting diode as a light emitting source, and the blue light emitting diode has a rated current value higher than that of the blue light emitting diode. It is characterized in that a direct current having a large current value is applied.
【0006】ここで、青色発光ダイオードは、組成In
GaN/AlGaNでドナーとしてZnを注入した発光
ダイオードを使用しており、定格電流で波長480nm
の光、つまり青色の光を得ることができる。Here, the blue light emitting diode has the composition In
A light emitting diode in which Zn is injected as a donor in GaN / AlGaN is used, and the wavelength is 480 nm at the rated current.
Light, that is, blue light can be obtained.
【0007】上記構成により、青色発光ダイオードに定
格電流値より大きな電流値の直流電流を印加すると、こ
のダイオードは波長380nm近傍の光、すなわち紫外
線を発生する。With the above structure, when a direct current having a current value larger than the rated current value is applied to the blue light emitting diode, the diode emits light having a wavelength of about 380 nm, that is, ultraviolet rays.
【0008】また請求項2記載の紫外線光源は、発光源
として青色発光ダイオードを使用し、この青色発光ダイ
オードに定格電流値より大きな電流値の極短パルス電流
を印加する構成としたことを特徴とするものである。The ultraviolet light source according to claim 2 is characterized in that a blue light emitting diode is used as a light emitting source and an extremely short pulse current having a current value larger than the rated current value is applied to the blue light emitting diode. To do.
【0009】上記構成により、単に青色発光ダイオード
に定格電流値より大きな電流値の直流電流を印加する
と、ダイオードの寿命が短くなることから、印加電流を
極短パルス電流とすることにより、紫外線が得られると
ともに寿命を保つことが可能となり、さらに紫外線の光
量を向上させることが可能となる。With the above structure, when a direct current having a current value larger than the rated current value is simply applied to the blue light emitting diode, the life of the diode is shortened. Therefore, by applying an extremely short pulse current, ultraviolet rays can be obtained. As a result, the life can be maintained, and the amount of ultraviolet light can be further improved.
【0010】さらに請求項3記載の紫外線光源は、上記
請求項2記載の紫外線光源であって、パルス幅を1〜5
nsとしたことを特徴とすることを特徴とするものであ
る。上記構成により、波長480nmの光(青色の光)
が抑制され、波長380nmの光(紫外線)のみが得ら
れる。Further, the ultraviolet light source according to claim 3 is the ultraviolet light source according to claim 2, wherein the pulse width is 1 to 5
It is characterized in that it is set to ns. With the above configuration, light with a wavelength of 480 nm (blue light)
Is suppressed, and only light (ultraviolet light) having a wavelength of 380 nm is obtained.
【0011】[0011]
【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて説明する。図1は本発明の実施の形態を示す
紫外線光源の回路図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a circuit diagram of an ultraviolet light source showing an embodiment of the present invention.
【0012】本発明の紫外線光源は、直流電源1と、直
流電源1から給電されて所定の周波数のパルスを発生す
るパルス発生器2と、紫外線を発光する発光回路(パル
ス電流駆動回路)3から構成されている。The ultraviolet light source of the present invention comprises a DC power supply 1, a pulse generator 2 which is fed from the DC power supply 1 to generate a pulse of a predetermined frequency, and a light emitting circuit (pulse current drive circuit) 3 which emits ultraviolet light. It is configured.
【0013】発光回路3は、直流電源1の出力電源端子
に接続される電圧端子11(印加電圧Va)と、この電圧
端子11に一端が接続された抵抗12(抵抗値50kΩ)
と、パルス発生器2の出力端子に接続される信号入力端
子13と、この信号入力端子13に一端が接続された抵抗14
(100kΩ)と、抵抗12の他端がコレクタに接続さ
れ、抵抗14の他端がベースに接続され、エミッタが接地
されたトランジスタ15と、トランジスタ15のベース−エ
ミッタ間に接続されたバイアス抵抗16(1kΩ)と、ト
ランジスタ15のコレクタに一端が接続された充電コンデ
ンサ17(容量Cd)と、コンデンサ17の他端に一端が接
続され他端が接地されたコイル18(インダクタンスL)
と、コンデンサ17の他端に一端が接続され他端が接地さ
れた抵抗19(1kΩ)と、コンデンサ17の他端にカソー
ドが接続された発光ダイオード20と、発光ダイオード20
のアノードに一端が接続され、他端が接地されたダイオ
ード電流制限抵抗21(抵抗R)と、発光ダイオード20の
アノードに接続された電流モニター端子22から構成され
ている。The light emitting circuit 3 has a voltage terminal 11 (applied voltage Va) connected to the output power terminal of the DC power source 1, and a resistor 12 (resistance value 50 kΩ) having one end connected to the voltage terminal 11.
And a signal input terminal 13 connected to the output terminal of the pulse generator 2, and a resistor 14 having one end connected to the signal input terminal 13.
(100 kΩ), the other end of the resistor 12 is connected to the collector, the other end of the resistor 14 is connected to the base, the emitter is grounded, and the bias resistor 16 connected between the base and the emitter of the transistor 15. (1 kΩ), a charging capacitor 17 (capacitance Cd) whose one end is connected to the collector of the transistor 15, and a coil 18 (inductance L) whose one end is connected to the other end of the capacitor 17 and whose other end is grounded.
A resistor 19 (1 kΩ) having one end connected to the other end of the capacitor 17 and the other end grounded; a light emitting diode 20 having a cathode connected to the other end of the capacitor 17;
The diode current limiting resistor 21 (resistor R) having one end connected to the anode and the other end grounded, and the current monitor terminal 22 connected to the anode of the light emitting diode 20.
【0014】上記発光ダイオード20は、組成InGaN
/AlGaNでドナーとしてZnを注入したダイオード
を使用しており、定格電流(約30mA)で波長480
nmの光、つまり青色の光を得ることができる。この青
色発光ダイオード20に定格電流値より大きな電流値の電
流を流すと図2に示すように、波長380nmを第2ピ
ークとする光、つまり紫外線を得られた。図2に示す波
形はダイオード20に直流電流を20mA,50mA,1
20mAを流したときの発光波長であり、定格電流値以
下の20mAの場合、430nmをピークとする青色の
光が得られ、50mAに増加すると380nm近傍の光
が現れ、120mAに増加すると380nmの波長がも
つピークが現れた。またダイオード20に流れる直流電流
の時間(印加時間)を0〜6nsとしたときの波長と光
量のスペクトル特性を図3に示す。1〜5nsの印加時
間としたとき、430nmは波長は抑制され、380n
mの波長のみが現れた。The light emitting diode 20 has a composition of InGaN.
/ AlGaN uses a Zn-implanted diode as a donor and has a rated current (about 30 mA) and a wavelength of 480
It is possible to obtain nm light, that is, blue light. When a current having a current value larger than the rated current value was passed through the blue light emitting diode 20, light having a second peak at a wavelength of 380 nm, that is, ultraviolet rays was obtained as shown in FIG. The waveform shown in Fig. 2 shows a direct current of 20mA, 50mA, 1
It is the emission wavelength when 20 mA is applied. In the case of 20 mA below the rated current value, blue light with a peak of 430 nm is obtained. Has a peak. Further, FIG. 3 shows the spectral characteristics of the wavelength and the amount of light when the time (application time) of the direct current flowing through the diode 20 is 0 to 6 ns. When the application time is 1 to 5 ns, the wavelength is suppressed at 430 nm and 380 n
Only the wavelength of m appeared.
【0015】上記光源の構成において、パルス発生器2
の周波数を10kHz、パルス幅を4ns、印加電圧V
aを300V、抵抗Rを10Ω、インダクタンスLを
0.25μH、容量Cdを100pFとしたときの、電
流モニター端子22にて検出されたダイオード20の電流
と、ダイオード20の光量の時間応答特性を図4に示す。In the configuration of the above light source, the pulse generator 2
Frequency is 10 kHz, pulse width is 4 ns, applied voltage V
The time response characteristics of the current of the diode 20 detected at the current monitor terminal 22 and the light quantity of the diode 20 when a is 300 V, resistance R is 10 Ω, inductance L is 0.25 μH, and capacitance Cd is 100 pF. 4 shows.
【0016】光のパルス幅は、半値幅で約4nmが得ら
れ、電流もピークで2Aが得られた。パルスの立ち下が
りには大きなアンダーシュートが見られるが、これはイ
ンダクタンスLの影響である。なお、印加電圧Vaは3
50V〜230Vで、時間ずれなしで安定したパルス発
光を得ることができた。The pulse width of light was about 4 nm at full width at half maximum, and the current was 2 A at peak. A large undershoot is seen at the trailing edge of the pulse, which is due to the influence of the inductance L. The applied voltage Va is 3
It was possible to obtain stable pulsed light emission at 50 V to 230 V without a time lag.
【0017】図5に同条件で容量Cdを50pF,10
0pF,150pFとしたときのダイオード20の光量の
時間応答特性を示す。充電コンデンサ17の容量Cdが大
きくなるにつれて光量は大きくなり、パルス幅も広くな
っていく特性が得られた。Under the same conditions, the capacitance Cd is set to 50 pF, 10 in FIG.
The time response characteristics of the light quantity of the diode 20 when 0 pF and 150 pF are shown. As the capacity Cd of the charging capacitor 17 increases, the amount of light increases and the pulse width also increases.
【0018】このように、青色発光ダイオード20に定格
電流値より大きな電流値の直流電流を印加することによ
り波長380nmの光、すなわち紫外線を得ることがで
きるとともに、発光ダイオード20を用いることにより、
安価で取扱いが容易で、さらに小型化が可能な紫外線光
源を得ることができる。As described above, light having a wavelength of 380 nm, that is, ultraviolet rays can be obtained by applying a direct current having a current value larger than the rated current value to the blue light emitting diode 20, and by using the light emitting diode 20,
It is possible to obtain an ultraviolet light source that is inexpensive, easy to handle, and can be downsized.
【0019】また単に青色発光ダイオード20に定格電流
値より大きな電流値の直流電流を印加すると、発光ダイ
オード20の寿命が短くなるが、発光ダイオード20の印加
電流を1〜5nmの極短パルスとすることにより、紫外
線を得ることができるとともに、寿命を保つことができ
る。さらに極短パルス幅を1〜5nsとすることによ
り、波長480nmの光(青色の光)が抑制され、波長
380nmの光(紫外線)のみが得ることができる。When a direct current having a current value larger than the rated current value is simply applied to the blue light emitting diode 20, the life of the light emitting diode 20 is shortened, but the applied current of the light emitting diode 20 is an extremely short pulse of 1 to 5 nm. As a result, ultraviolet rays can be obtained and the life can be maintained. Further, by setting the extremely short pulse width to 1 to 5 ns, light having a wavelength of 480 nm (blue light) is suppressed, and only light having a wavelength of 380 nm (ultraviolet light) can be obtained.
【0020】なお、パルス幅を広くせずに輝度を大きく
するためには、トランジスタ15にアバランシェトランジ
スタをカスケード接続にして、印加電圧Vaを350V
以上の電圧とするとよい。また抵抗21の抵抗Rを10Ω
以下にすることによりパルス幅を短くすることができる
が、パルスの後にアンダーシュートが出てしまい、この
アンダーシュートをなくすためにはコイル18を回路から
取り除くとよいが、パルス幅が広がってしまう(輝度は
わずかに増加する)。In order to increase the brightness without widening the pulse width, an avalanche transistor is connected in cascade to the transistor 15 and the applied voltage Va is 350V.
It is preferable to use the above voltage. Moreover, the resistance R of the resistance 21 is set to 10Ω.
The pulse width can be shortened by the following, but an undershoot occurs after the pulse, and it is good to remove the coil 18 from the circuit to eliminate this undershoot, but the pulse width becomes wider ( Brightness increases slightly).
【0021】[0021]
【発明の効果】以上述べたように請求項1記載の発明に
よれば、青色発光ダイオードに定格電流値より大きな電
流値の直流電流を印加することにより、波長380nm
近傍の光、すなわち紫外線を得ることができるととも
に、発光ダイオードを用いることにより、安価で取扱い
が容易で、さらに小型化が可能な紫外線光源を得ること
ができる。As described above, according to the first aspect of the present invention, by applying a direct current having a current value larger than the rated current value to the blue light emitting diode, a wavelength of 380 nm is obtained.
By using a light emitting diode, it is possible to obtain an ultraviolet light source that is inexpensive, easy to handle, and can be miniaturized, while being able to obtain light in the vicinity, that is, ultraviolet light.
【0022】また請求項2記載の発明によれば、単に青
色発光ダイオードに定格電流値より大きな電流値の直流
電流を印加すると、ダイオードの寿命が短くなるが、印
加電流を極短パルスとすることにより、紫外線を得るこ
とができるとともに、寿命を保つことができる。According to the second aspect of the invention, when a direct current having a current value larger than the rated current value is simply applied to the blue light emitting diode, the life of the diode is shortened, but the applied current is an extremely short pulse. Thus, ultraviolet rays can be obtained and the life can be maintained.
【0023】さらに請求項3記載の発明によれば、波長
480nmの光(青色の光)が抑制され、波長380n
m近傍の光(紫外線)のみを得ることができる。Further, according to the invention of claim 3, the light of wavelength 480 nm (blue light) is suppressed, and the wavelength of 380 n
Only light (ultraviolet rays) near m can be obtained.
【図1】本発明の実施の形態を示す紫外線光源の回路図
である。FIG. 1 is a circuit diagram of an ultraviolet light source showing an embodiment of the present invention.
【図2】同紫外線光源に使用する発光ダイオードの印加
直流電流によるスペクトル分布図である。FIG. 2 is a spectrum distribution diagram according to a direct current applied to a light emitting diode used for the same ultraviolet light source.
【図3】同紫外線光源に使用する発光ダイオードの直流
電流印加直後のスペクトル変化図である。FIG. 3 is a spectrum change diagram of a light emitting diode used in the same ultraviolet light source immediately after a direct current is applied.
【図4】同紫外線光源における発光ダイオードの光量と
電流の時間応答図である。FIG. 4 is a time response diagram of a light amount and a current of a light emitting diode in the same ultraviolet light source.
【図5】同紫外線光源における充電コンデンサの容量に
よる発光ダイオードの光量の時間応答図である。FIG. 5 is a time response diagram of a light amount of a light emitting diode depending on a capacity of a charging capacitor in the same ultraviolet light source.
1 直流電源 2 パルス発生器 3 発光回路 15 トランジスタ 17 充電コンデンサ 18 コイル 20 青色発光ダイオード 1 DC power supply 2 Pulse generator 3 Light emitting circuit 15 Transistor 17 Charging capacitor 18 Coil 20 Blue light emitting diode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 寺田 幸博 大阪府大阪市此花区西九条5丁目3番28号 日立造船株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yukihiro Terada 5-3-8 Nishikujo 5-chome, Konohana-ku, Osaka City, Osaka Prefecture Hitachi Shipbuilding Co., Ltd.
Claims (3)
し、この青色発光ダイオードに定格電流値より大きな電
流値の直流電流を印加する構成とした紫外線光源。1. An ultraviolet light source configured to use a blue light emitting diode as a light emitting source and to apply a direct current having a current value larger than a rated current value to the blue light emitting diode.
し、この青色発光ダイオードに定格電流値より大きな電
流値の極短パルス電流を印加する構成とした紫外線光
源。2. An ultraviolet light source configured to use a blue light emitting diode as a light emitting source and to apply an ultrashort pulse current having a current value larger than the rated current value to the blue light emitting diode.
徴とする。3. The ultraviolet light source according to claim 2, wherein the pulse width of the ultrashort pulse current is 1 to 5 ns.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33979695A JPH09181356A (en) | 1995-12-27 | 1995-12-27 | Ultraviolet light source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33979695A JPH09181356A (en) | 1995-12-27 | 1995-12-27 | Ultraviolet light source |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH09181356A true JPH09181356A (en) | 1997-07-11 |
Family
ID=18330897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP33979695A Pending JPH09181356A (en) | 1995-12-27 | 1995-12-27 | Ultraviolet light source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH09181356A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007010789A1 (en) * | 2005-07-21 | 2007-01-25 | Nitto Denko Corporation | Photoreaction product sheet and method and system for producing photoreaction product sheet |
US7294364B2 (en) * | 1999-09-24 | 2007-11-13 | Cao Group, Inc. | Method for curing composite materials |
JP2010206063A (en) * | 2009-03-05 | 2010-09-16 | Sony Corp | METHOD OF DRIVING GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD OF DRIVING GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT OF IMAGE DISPLAY DEVICE, METHOD OF DRIVING SURFACE TYPE LIGHT SOURCE DEVICE, AND METHOD OF DRIVING LIGHT EMITTING DEVICE |
-
1995
- 1995-12-27 JP JP33979695A patent/JPH09181356A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7294364B2 (en) * | 1999-09-24 | 2007-11-13 | Cao Group, Inc. | Method for curing composite materials |
WO2007010789A1 (en) * | 2005-07-21 | 2007-01-25 | Nitto Denko Corporation | Photoreaction product sheet and method and system for producing photoreaction product sheet |
JP2007023240A (en) * | 2005-07-21 | 2007-02-01 | Nitto Denko Corp | Photoreaction product sheets, method and apparatus for producing photoreaction product sheets |
US8093310B2 (en) | 2005-07-21 | 2012-01-10 | Nitto Denko Corporation | Sheet-like products of photoreaction, as well as manufacturing method and apparatus for sheet-like products of photoreaction |
JP2010206063A (en) * | 2009-03-05 | 2010-09-16 | Sony Corp | METHOD OF DRIVING GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD OF DRIVING GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT OF IMAGE DISPLAY DEVICE, METHOD OF DRIVING SURFACE TYPE LIGHT SOURCE DEVICE, AND METHOD OF DRIVING LIGHT EMITTING DEVICE |
US8553740B2 (en) | 2009-03-05 | 2013-10-08 | Sony Corporation | Method of driving GaN-based semiconductor light emitting element, method of driving GaN-based semiconductor light emitting element of image display device, method of driving planar light source device, and method of driving light emitting device |
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