JPH09181183A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPH09181183A
JPH09181183A JP7336400A JP33640095A JPH09181183A JP H09181183 A JPH09181183 A JP H09181183A JP 7336400 A JP7336400 A JP 7336400A JP 33640095 A JP33640095 A JP 33640095A JP H09181183 A JPH09181183 A JP H09181183A
Authority
JP
Japan
Prior art keywords
pad
wiring
chip
wiring group
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP7336400A
Other languages
Japanese (ja)
Inventor
Takafumi Onuki
隆文 大貫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7336400A priority Critical patent/JPH09181183A/en
Publication of JPH09181183A publication Critical patent/JPH09181183A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To impart freedom to the combination of a chip and a package by improving the layout of the peripheral part of the chip. SOLUTION: This device is constituted by arranging I/O regions 14 and pad regions 12 in the peripheral part of a chip. A wiring region 15 is formed between the I/O regions 14 and the pad regions 12. First wiring groups 16 parallel to the sides of the chip are formed in the wiring region 15. The part between the first wiring groups 16 and a second wiring group stretching from each I/O is selectively connected, and the part between the first wiring groups 16 and a third wiring group stretching from each pad 11 is selectively connected.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、半導体集積回路装
置(以下「LSI」と略すこともある)に関し、特に、
チップ周辺部にI/O領域とパッド領域とを有するLS
Iに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device (hereinafter sometimes abbreviated as "LSI"), and more particularly,
LS having an I / O area and a pad area in the periphery of the chip
Regarding I.

【0002】[0002]

【従来の技術】図4はこの種のLSIの概略平面図であ
り、1はチップである。チップ1の周辺部には、多数の
パッド2を有するパッド領域3と多数のI/O(入出力
バッファ)4を有するI/O領域5とが設けられ、隣り
合うパッドとI/O(例えばパッド2aとI/O4a)
との間が図示を略した配線で接続されているとともに、
パッド2とパッケージ7の端子8との間が直径20〜3
0μm程度の金細線(ワイヤ)9によって接続されてい
る。
2. Description of the Related Art FIG. 4 is a schematic plan view of an LSI of this type, and 1 is a chip. In the peripheral portion of the chip 1, a pad region 3 having a large number of pads 2 and an I / O region 5 having a large number of I / Os (input / output buffers) 4 are provided, and adjacent pads and I / Os (for example, Pad 2a and I / O 4a)
And is connected by wiring (not shown),
The diameter between the pad 2 and the terminal 8 of the package 7 is 20 to 3
They are connected by a thin gold wire (wire) 9 of about 0 μm.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、かかる
従来の半導体集積回路装置にあっては、I/O4の並び
順と端子8の並び順が一対一に対応していたため、チッ
プ1とパッケージ7の組み合わせに自在性がなく、例え
ば、同一機能のチップであっても、端子配置の異なるパ
ッケージに適用する場合には、少なくともI/O領域の
大幅な設計変更を必要とするという問題点があった。
However, in such a conventional semiconductor integrated circuit device, since the arrangement order of the I / O 4 and the arrangement order of the terminals 8 correspond one-to-one, the chip 1 and the package 7 are There is a problem in that there is no flexibility in combination, and for example, even if chips having the same function are applied to packages having different terminal arrangements, at least a large design change of the I / O area is required. .

【0004】なお、ワイヤ9を交差させることによっ
て、一部の端子(又はI/O)の機能を交換できるが、
交差点でのワイヤ同士のショートを否定できないうえ、
ボンディング工程そのものも複雑化するから実用的では
ない。そこで、本発明は、このような問題点に鑑みてな
されたもので、チップ周辺部のレイアウトを工夫して、
チップとパッケージの組み合わせに自在性を持たせるこ
とを目的とする。
By crossing the wires 9, the functions of some terminals (or I / O) can be exchanged.
In addition to denying a short between wires at an intersection,
This is not practical because the bonding process itself becomes complicated. Therefore, the present invention has been made in view of these problems, and devises the layout of the chip peripheral portion to
The purpose is to give flexibility to the combination of chips and packages.

【0005】[0005]

【課題を解決するための手段】上記目的は、チップ周辺
部にI/O領域とパッド領域とを有する半導体集積回路
装置において、前記I/O領域とパッド領域との間に配
線領域を形成するとともに、該配線領域にチップの辺と
平行な第1配線群を形成し、かつ、該第1配線群と各I
/Oから延びる第2配線群との間及び該第1配線群と各
パッドから延びる第3配線群との間を選択的に接続する
ことにより達成できる。
In the semiconductor integrated circuit device having an I / O region and a pad region on the periphery of a chip, a wiring region is formed between the I / O region and the pad region. At the same time, a first wiring group parallel to the side of the chip is formed in the wiring region, and the first wiring group and each I
This can be achieved by selectively connecting the second wiring group extending from / O and the first wiring group and the third wiring group extending from each pad.

【0006】[0006]

【発明の実施の形態】以下、本発明の実施例を図面に基
づいて説明する。図1は本発明に係る半導体集積回路装
置の一実施例を示すチップ概略平面図、図2はその要部
(図1のA部)拡大図である。図において、10はチッ
プであり、チップ10の周辺部には、多数のパッド11
を有するパッド領域12と、多数のI/O13を有する
I/O領域14が形成されている。
Embodiments of the present invention will be described below with reference to the drawings. 1 is a schematic plan view of a chip showing an embodiment of a semiconductor integrated circuit device according to the present invention, and FIG. 2 is an enlarged view of a main part thereof (A part in FIG. 1). In the figure, 10 is a chip, and a large number of pads 11 are provided around the chip 10.
And a pad region 12 having a plurality of I / Os 13 and an I / O region 14 having a large number of I / Os 13 are formed.

【0007】ここに、本実施例における特徴的な事項の
第1は、パッド領域12とI/O領域14との間に配線
領域15を形成し、かつ、この配線領域15に第1配線
群16を形成した点にある。第1配線群16は、チップ
10の4辺に設けられたI/O領域14を取り囲むよう
に連続的に形成されており、その線数はI/O13と同
数若しくはそれ以上である。
The first characteristic feature of this embodiment is that the wiring region 15 is formed between the pad region 12 and the I / O region 14, and the first wiring group is formed in this wiring region 15. 16 is formed. The first wiring group 16 is continuously formed so as to surround the I / O regions 14 provided on the four sides of the chip 10, and the number of lines thereof is equal to or greater than that of the I / O 13.

【0008】また、特徴的な事項の第2は、図1では図
示の都合上省略しているが、図2に示すように、各I/
O13から延びる第2配線群17と、各パッド12から
延びる第3配線群18とを第1配線群16上で、配線層
を異ならせて交差させるとともに、第1配線群16と第
2配線群17との間、及び、第1配線群16と第3配線
群18との間を層間コンタクト19a、19bによって
選択的に接続する点にある。
The second characteristic item is omitted in FIG. 1 for convenience of illustration, but as shown in FIG.
The second wiring group 17 extending from O13 and the third wiring group 18 extending from each pad 12 are crossed on the first wiring group 16 with different wiring layers and the first wiring group 16 and the second wiring group. 17 and between the first wiring group 16 and the third wiring group 18 are selectively connected by interlayer contacts 19a and 19b.

【0009】なお、図2では第1配線群16を4本の線
で示しているが、これは図面を見やすくするための便宜
策である。このような構成において、図2のパッド11
やI/O13並びに第1〜第3配線群16、17、18
の各線に識別のための符号(a〜d)を付して、図示の
層間コンタクト19a、19bを設けた場合の各パッド
と各I/Oの接続関係を調べると、まず、一番上のパッ
ド11aは、第3配線群18の一番上の線18a、4個
の層間コンタクト19b、19b、19a、19a、及
び、第2配線群17の下2本の線17c、17dを介し
て下二つのI/O13c、13dに接続されている。し
たがって、例えば、一番下のI/O13dを出力バッフ
ァ、その上のI/O13cを入力バッファとすると、一
番上のパッド11aは、これら二つのI/O13c、1
3dのための入出力パッドとして機能する。
Although the first wiring group 16 is shown by four lines in FIG. 2, this is a convenient measure for making the drawing easy to see. In such a structure, the pad 11 of FIG.
And I / O 13 and first to third wiring groups 16, 17, 18
The respective lines are labeled with identification symbols (a to d), and the connection relationship between each pad and each I / O when the illustrated interlayer contacts 19a and 19b are provided is first examined. The pad 11a is located below the uppermost line 18a of the third wiring group 18, four interlayer contacts 19b, 19b, 19a, 19a, and the lower two lines 17c, 17d of the second wiring group 17. It is connected to two I / Os 13c and 13d. Therefore, for example, if the lowermost I / O 13d is the output buffer and the upper I / O 13c is the input buffer, the uppermost pad 11a will have these two I / Os 13c, 1
Functions as an input / output pad for 3d.

【0010】次に、2番目のパッド11bは、第3配線
群18の2番目の線18b、2個の層間コンタクト19
b、19a、及び、第2配線群17の2番目の線17b
を介して2番目のI/O13bに接続されているととも
に、さらに、1個の層間コンタクト19b、及び、第3
配線群18の一番下の線18dを介して一番下のパッド
11dにも接続されている。したがって、2番目のパッ
ド11bと一番下のパッド11dは、2番目のI/O1
3bの兼用パッドとして機能する。
Next, the second pad 11b is the second line 18b of the third wiring group 18, and the two interlayer contacts 19 are formed.
b, 19a and the second line 17b of the second wiring group 17
Is connected to the second I / O 13b through the intermediary of one interlayer contact 19b and the third interlayer contact 19b.
It is also connected to the bottom pad 11d via the bottom line 18d of the wiring group 18. Therefore, the second pad 11b and the bottom pad 11d are connected to the second I / O1.
It functions as a shared pad of 3b.

【0011】次に、3番目のパッド11cは、第3配線
群18の3番目の線18c、2個の層間コンタクト19
b、19a、及び、第2配線群17の1番上の線17a
を介して一番上のI/O13aに接続されている。した
がって、3番目のパッド11cは、一番上のI/O13
aの専用パッドとして機能する。このように本実施例で
は、第1配線群19〜第3配線群18の各交差点に選択
的に層間コンタクト19a、19bを配置するだけで、
I/O13の並び順に拘わらず、各パッド11とI/O
13との間の接続関係を自由に設定できるという格別有
利な作用が得られる。したがって、チップとパッケージ
の組み合わせに自在性を持たせることができ、例えば、
一つのチップ上に複数の機能回路を形成し、これらの機
能を選択して異なる種類のパッケージに搭載する場合
や、ボンディングを変更して別機能のLSIに見せかけ
る場合などに利用して好適な技術を提供できる。
Next, the third pad 11c is connected to the third line 18c of the third wiring group 18 and the two interlayer contacts 19.
b, 19a and the top line 17a of the second wiring group 17
Is connected to the top I / O 13a via. Therefore, the third pad 11c is the top I / O 13
Functions as a dedicated pad for a. As described above, in this embodiment, the interlayer contacts 19a and 19b are selectively arranged at each intersection of the first wiring group 19 to the third wiring group 18,
Regardless of the order of arrangement of I / O 13, each pad 11 and I / O
A particularly advantageous effect is obtained in that the connection relationship with 13 can be set freely. Therefore, it is possible to give flexibility to the combination of the chip and the package, for example,
A technology suitable for use when a plurality of functional circuits are formed on one chip and these functions are selected and mounted in different types of packages, or when bonding is changed to make it look like an LSI having a different function. Can be provided.

【0012】なお、上記実施例では、第1配線群16
を、チップ10の4辺に設けられたI/O領域14を取
り囲むように連続的に形成している。これによれば、異
なる辺に位置するパッドとI/Oとの間も接続できるか
ら、最も自由度が高く好ましいが、同じ辺に位置するパ
ッドとI/Oとの間だけを接続するのであれば、図3の
ようにしてもよい。すなわち、チップ10′各辺ごとに
第1配線群16′、16′、16′、16′を分割して
設けてもよい。A部拡大図は上記実施例と共通の図2で
ある。
In the above embodiment, the first wiring group 16
Are continuously formed so as to surround the I / O regions 14 provided on the four sides of the chip 10. According to this, since pads and I / Os located on different sides can be connected to each other, the degree of freedom is the highest, which is preferable. However, only pads and I / Os located on the same side can be connected. Alternatively, it may be as shown in FIG. That is, the first wiring groups 16 ', 16', 16 ', 16' may be provided separately for each side of the chip 10 '. The enlarged view of the portion A is FIG. 2 which is common to the above embodiment.

【0013】また、上記各実施例では、チップの4辺に
パッド領域とI/O領域を有する例を示したが、これに
限らない。1辺又は2辺若しくは3辺であってもよい。
さらに、上記各実施例では、ボンディングワイヤ法に適
用しているが、例えば、テープキャリヤ法にも適用でき
る。
Further, in each of the above embodiments, the example in which the pad area and the I / O area are provided on the four sides of the chip is shown, but the invention is not limited to this. It may be one side, two sides or three sides.
Further, in each of the above embodiments, the bonding wire method is applied, but the tape carrier method can also be applied, for example.

【0014】[0014]

【発明の効果】本発明によれば、チップとパッケージの
組み合わせに自在性を持たせることができ、LSI設計
の自由度を向上できるという従来技術にはない格別有利
な効果が得られる。
According to the present invention, the combination of a chip and a package can be made flexible, and a particularly advantageous effect that the degree of freedom in LSI design can be improved, which is not available in the prior art, can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】一実施例のチップ概略平面図である。FIG. 1 is a schematic plan view of a chip according to an embodiment.

【図2】一実施例の要部拡大図である。FIG. 2 is an enlarged view of a main part of the embodiment.

【図3】他の実施例のチップ概略平面図である。FIG. 3 is a schematic plan view of a chip of another embodiment.

【図4】パッケージを含む従来例のチップ概略平面図で
ある。
FIG. 4 is a schematic plan view of a conventional chip including a package.

【符号の説明】[Explanation of symbols]

11:パッド 12:パッド領域 13:I/O 14:I/O領域 15:配線領域 16:第1配線群 17:第2配線群 18:第3配線群 11: Pad 12: Pad Area 13: I / O 14: I / O Area 15: Wiring Area 16: First Wiring Group 17: Second Wiring Group 18: Third Wiring Group

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】チップ周辺部にI/O領域とパッド領域と
を有する半導体集積回路装置において、前記I/O領域
とパッド領域との間に配線領域を形成するとともに、該
配線領域にチップの辺と平行な第1配線群を形成し、か
つ、該第1配線群と各I/Oから延びる第2配線群との
間及び該第1配線群と各パッドから延びる第3配線群と
の間を選択的に接続することを特徴とする半導体集積回
路装置。
1. A semiconductor integrated circuit device having an I / O region and a pad region in the periphery of a chip, wherein a wiring region is formed between the I / O region and the pad region, and a chip region is formed in the wiring region. A first wiring group parallel to the side is formed, and between the first wiring group and a second wiring group extending from each I / O, and between the first wiring group and a third wiring group extending from each pad. A semiconductor integrated circuit device characterized by selectively connecting between them.
JP7336400A 1995-12-25 1995-12-25 Semiconductor integrated circuit device Withdrawn JPH09181183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7336400A JPH09181183A (en) 1995-12-25 1995-12-25 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7336400A JPH09181183A (en) 1995-12-25 1995-12-25 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPH09181183A true JPH09181183A (en) 1997-07-11

Family

ID=18298751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7336400A Withdrawn JPH09181183A (en) 1995-12-25 1995-12-25 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPH09181183A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207980B1 (en) 1998-05-29 2001-03-27 Fujitsu Limited Layout method of a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207980B1 (en) 1998-05-29 2001-03-27 Fujitsu Limited Layout method of a semiconductor device

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