JPH0917818A - Method of measuring level of bonding pad - Google Patents

Method of measuring level of bonding pad

Info

Publication number
JPH0917818A
JPH0917818A JP7165092A JP16509295A JPH0917818A JP H0917818 A JPH0917818 A JP H0917818A JP 7165092 A JP7165092 A JP 7165092A JP 16509295 A JP16509295 A JP 16509295A JP H0917818 A JPH0917818 A JP H0917818A
Authority
JP
Japan
Prior art keywords
bonding
bonding pad
height
pellet
mark
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7165092A
Other languages
Japanese (ja)
Inventor
Uichi Miyahara
右一 宮原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP7165092A priority Critical patent/JPH0917818A/en
Publication of JPH0917818A publication Critical patent/JPH0917818A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/8513—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10161—Shape being a cuboid with a rectangular active surface

Abstract

PURPOSE: To provide a means which can measure the level where a bonding pad is positioned, at high speed and automatically by simple method, by substituting the secondary coordinate on the reference plane of a plurality of bonding pads arranged on an approximate curve thereby obtaining the distance from the reference plane of a plurality of bonding pads. CONSTITUTION: The level of a first mark 2 is-measured with the stereosight by two CCD cameras 15 and 16. Subsequently, similar to the first mark, the level of the pellet plane where marks exist is measured by stereosight from the second mark to the eight marks (22-28). Hereby, the X, Y and Z coordinates of three points each for each side of the pellet are measured. Next, the secondary approximate curve 34 in height direction is obtained, using a method of least squares, form the YX coordinates (31, 32, and 33) of the first, second, and third marks. And, the level (Z coordinate) 36 where the bonding pads exists is computed by applying the Y coordinate 35 of the bonding pad existing on this approximate curve.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、半導体ペレットのワイ
ヤボンディング後の自動外観検査に関し、特にワイヤの
ループ高さを求める際の基準となるボンディングパッド
の高さ計測に関するもので、ペレットに反りや傾きがあ
る場合の補正に使用されるものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an automatic visual inspection of semiconductor pellets after wire bonding, and more particularly to the measurement of the height of a bonding pad which serves as a reference when determining the loop height of a wire. It is used for correction when there is an inclination.

【０００２】[0002]

【従来の技術】半導体ペレットの電極と外囲器部品（リ
ードフレーム等）の端子との接続方法として、ワイヤボ
ンディングが広く使用されている。ワイヤボンディング
の品質を決める要素として、ボンディング強度の他にワ
イヤループがある。ワイヤループが小さいとボンディン
グワイヤがペレットエッジにタッチしたり、ワイヤルー
プが長すぎると樹脂モールドの際にワイヤ流れが生じ、
ワイヤ間ショートが生ずる可能性があるからである。こ
のためボンディング外観検査における重要なチェック項
目の１つとしてループ高さの検査がある。2. Description of the Related Art Wire bonding is widely used as a method for connecting electrodes of semiconductor pellets to terminals of envelope parts (lead frames, etc.). In addition to the bonding strength, a wire loop is another factor that determines the quality of wire bonding. If the wire loop is small, the bonding wire will touch the pellet edge, and if the wire loop is too long, wire flow will occur during resin molding,
This is because a short circuit between wires may occur. Therefore, the loop height inspection is one of the important check items in the bonding visual inspection.

【０００３】従来外観検査は目視で行われることが多か
ったが、自動外観検査機の開発も進められている。ここ
で従来のループ高さの測定法を説明する。図５に示すよ
うに、ワイヤボンディング後のワイヤ１０１のループ高
さ１０２は、ペレット１０３上面、特にそのワイヤがボ
ンディングされたボンディングパッドの位置を基準とし
て計測されている。そのためワイヤのループ頂点位置
（高さ）だけでなく、ペレット上面のボンディングパッ
ドの位置（高さ）も計測する必要がある。しかし、ペレ
ットはダイボンディングされた時やその後のキュア（加
熱処理）時に傾きや反りがでることがある。しかもペレ
ットのサイズが大きくなるほど、反り量が大きくなる傾
向がある。その場合場所によりボンディングパッドの高
さは異なることになる。そこでボンディングパッド高さ
計測の際はワイヤの接合面（第１ボンディング点）に出
来るだけ近い部分（近傍）を計測しなければならない。
なお図において参照番号１０４は、例えばリードフレー
ムのダイパッド、１０５はインナーリードのボンデイン
グ領域である。Conventionally, the visual appearance inspection has often been conducted by visual inspection, but the development of an automatic visual appearance inspection machine is also in progress. Here, a conventional loop height measuring method will be described. As shown in FIG. 5, the loop height 102 of the wire 101 after wire bonding is measured with reference to the upper surface of the pellet 103, particularly the position of the bonding pad to which the wire is bonded. Therefore, it is necessary to measure not only the wire loop vertex position (height) but also the bonding pad position (height) on the upper surface of the pellet. However, the pellet may be tilted or warped when it is die-bonded or when it is subsequently cured (heat treatment). Moreover, the larger the pellet size, the larger the amount of warp tends to be. In that case, the height of the bonding pad varies depending on the location. Therefore, when measuring the bonding pad height, it is necessary to measure a portion (vicinity) as close as possible to the wire bonding surface (first bonding point).
In the figure, reference numeral 104 is, for example, a die pad of the lead frame, and 105 is a bonding area of the inner lead.

【０００４】従来この測定は、一般的には測微計を使用
した焦点深度による目視計測で行われていた。この方法
では人によるばらつきがあり、しかも人間による計測の
ため自動化は実現できなかった。従ってせいぜい抜き取
り検査に使用できる程度であった。Conventionally, this measurement is generally performed by visual measurement using a depth of focus using a micrometer. With this method, there were variations among people, and automation could not be realized due to human measurement. Therefore, at most, it could be used for sampling inspection.

【０００５】高さの自動計測の例としては、レーザー変
位計を用いた計測がある。しかしワイヤボンダーに装備
しようとしても、レーザー変位計自体が非常に高価なた
め容易に導入できない。さらに高精度なレーザ変位計ほ
ど寸法が大きく、しかもワークディスタンスが短くなる
ため、取付が困難であった。An example of automatic height measurement is measurement using a laser displacement meter. However, even if it is attempted to equip the wire bonder, it cannot be easily introduced because the laser displacement meter itself is very expensive. Further, the more accurate the laser displacement meter is, the larger the size is and the shorter the work distance is, so that the mounting is difficult.

【０００６】また第１ボンディング接合面の近傍を計測
するため、レーザー変位計を移動させなければならず、
ワイヤボンディングされている全ての第１ボンディング
接合面近傍の高さを計測するのに時間がかかってしまう
問題もあった。このようにボンディングの外観検査を自
動化するには、ループ高さの計測、取り分けボンディン
グパッド面の高さの測定に適当な手段がなかった。Further, in order to measure the vicinity of the first bonding joint surface, the laser displacement meter must be moved,
There is also a problem that it takes time to measure the heights near all the first bonding joint surfaces that are wire-bonded. As described above, in order to automate the visual inspection of bonding, there is no suitable means for measuring the height of the loop and especially the height of the bonding pad surface.

【０００７】[0007]

【発明が解決しようとする課題】本発明は上記事情に鑑
みてなされたもので、ボンディングパッドの位置する高
さを簡易な方法で高速かつ自動で計測できる手段を提供
することを目的としている。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object thereof is to provide a means capable of automatically measuring the height at which a bonding pad is located at a high speed by a simple method.

【０００８】[0008]

【課題を解決するための手段】上記課題を解決するため
に本発明のボンディングパッド高さ計測方法は、１主面
の周辺の同一線上に配置された複数のボンディングパッ
ドと複数の位置合せマークを有し、他の主面が外囲器部
品に接着された半導体ペレットを基準面に保持し、前記
半導体ペレットの各辺に設けられた少なくとも３点の前
記位置合せマークの３次元座標を計測し、計測された前
記少なくとも３点の３次元座標より近似曲線を算出し、
前記近似曲線上に配置された前記複数のボンディングパ
ッドの前記基準面上の２次元座標を代入することによ
り、前記複数のボンディングパッドの前記基準面よりの
距離を求めることを特徴としている。In order to solve the above problems, the bonding pad height measuring method of the present invention uses a plurality of bonding pads and a plurality of alignment marks arranged on the same line around one main surface. The semiconductor pellet having the other main surface adhered to the envelope part is held on the reference surface, and the three-dimensional coordinates of at least three alignment marks provided on each side of the semiconductor pellet are measured. , Calculating an approximate curve from the measured three-dimensional coordinates of the at least three points,
It is characterized in that the distances from the reference plane of the plurality of bonding pads are obtained by substituting the two-dimensional coordinates on the reference plane of the plurality of bonding pads arranged on the approximate curve.

【０００９】前記３次元座標の計測には、２台のカメラ
によるステレオ視またはオートフォーカス機能付きのカ
メラを使用することが望ましい。また近似曲線として
は、位置合せマークとボンディングパッドが同一直線上
に配置されているので、高さ方向の２次曲線で近似する
ことができる。For the measurement of the three-dimensional coordinates, it is desirable to use a stereoscopic camera with two cameras or a camera with an autofocus function. Further, as the approximate curve, since the alignment mark and the bonding pad are arranged on the same straight line, the approximation curve can be approximated by a quadratic curve in the height direction.

【００１０】[0010]

【作用】半導体ペレットの各辺に設けられた少なくとも
３個の位置合せマークの３次元座標より近似曲線の方程
式を算出し、その曲線上にあるボンディングパッドの高
さを、そのパッドのペレット面上の２次元座標を前記近
似曲線の方程式に代入して求めるので、ボンディングパ
ッドが多数存在する場合でも、短時間にボンディングパ
ッドの高さを求めることができる。これをベースとして
個々のワイヤループの高さを正確にかつ高速に算出する
ことができる。The equation of an approximate curve is calculated from the three-dimensional coordinates of at least three alignment marks provided on each side of the semiconductor pellet, and the height of the bonding pad on the curve is calculated on the pellet surface of the pad. Since the two-dimensional coordinate of is obtained by substituting it into the equation of the approximate curve, the height of the bonding pad can be obtained in a short time even when there are many bonding pads. Based on this, the height of each wire loop can be calculated accurately and at high speed.

【００１１】[0011]

【実施例】以下、図面を参照しながら実施例を説明す
る。図１は本発明の第１の実施例に係るボンディングパ
ッド高さ計測方法を示す半導体ペレット周辺の斜視図で
ある。図２は同じくボンディングパッド高さの算出方法
を示した模式図である。Embodiments will be described below with reference to the drawings. FIG. 1 is a perspective view around a semiconductor pellet showing a bonding pad height measuring method according to a first embodiment of the present invention. FIG. 2 is a schematic diagram showing a method of calculating the bonding pad height in the same manner.

【００１２】図１に示すように、ペレット１１の斜め上
方に２つのＣＣＤカメラ１５、１６が設置されており、
カメラの画像信号は画像処理装置１７に入力される。ま
たペレット表面には位置合せマーク２１〜２８とボンデ
ィングパッド１２が各辺毎にに同一線上に配置されてい
る。位置合せマークおよびボンディングパッドの平面的
な位置情報はペレット設計値からデータとして、画像処
理装置に接続されているコントローラ１８に予め入力さ
れている。このコントローラで、カメラのステレオ視に
よる位置情報から位置合せマークの高さ演算、および複
数の位置合せマークをつないで得られる曲線の近似曲線
方程式の演算が行われる。この例ではペレット表面の周
辺に位置合せマークが各辺に３点、合計で８点存在して
いる。またボンディングパッド１２とインナーリードの
ボンディング領域１３との間は、ボンディングワイヤ１
４によって接続されている。なお図面中のＸＹＺは座標
軸を定義したものである。As shown in FIG. 1, two CCD cameras 15 and 16 are installed diagonally above the pellet 11.
The image signal of the camera is input to the image processing device 17. Further, on the surface of the pellet, alignment marks 21 to 28 and the bonding pad 12 are arranged on the same line for each side. The planar position information of the alignment mark and the bonding pad is previously input as data from the pellet design value to the controller 18 connected to the image processing apparatus. With this controller, the height of the alignment mark is calculated from the position information by the stereoscopic view of the camera, and the approximate curve equation of the curve obtained by connecting a plurality of alignment marks is calculated. In this example, there are 8 alignment marks around the surface of the pellet, 3 on each side. The bonding wire 1 is provided between the bonding pad 12 and the bonding area 13 of the inner lead.
4. Note that XYZ in the drawing defines coordinate axes.

【００１３】以下ボンディングパッド高さ計測方法につ
いて詳細に説明する。まず第１のマーク２１の高さを２
つのＣＣＤカメラによるステレオ視で計測する。続いて
第１マークと同様に第２マークから第８マーク（２２〜
２８）までステレオ視でマークの存在するペレット面の
高さを計測する。これによりペレットの各辺３点ずつの
Ｘ，Ｙ，Ｚ座標が計測できたことになる。The bonding pad height measuring method will be described in detail below. First, set the height of the first mark 21 to 2
Measurement is performed by stereo vision with two CCD cameras. Then, similarly to the first mark, the second mark to the eighth mark (22 ...
Up to 28), the height of the pellet surface where the mark exists is measured in stereo. As a result, the X, Y, and Z coordinates of three points on each side of the pellet could be measured.

【００１４】ここでステレオ視の原理について簡単に説
明する。図３に示すように計測対象点Ｐが右カメラ撮像
面３８および左カメラ撮像面３９のどの位置に見えてい
るかで、仮想基準面からＰまでの距離が計算できる。例
えば計測点ＰがＰ’の位置に近づくと左撮像面３９での
ポイントＰ１は右側に寄り、右撮像面３８ではポイント
Ｐ２が左側に寄ることになる。この撮像面内の移動量に
よりＰの移動量が算出できる。この撮像面内の移動量が
どれだけのＰの移動量に相当するかは、予めキャリブレ
ーションにより求めておく必要がある。Here, the principle of stereoscopic vision will be briefly described. As shown in FIG. 3, the distance from the virtual reference plane to P can be calculated depending on the position of the measurement target point P on the right camera image pickup surface 38 and the left camera image pickup surface 39. For example, when the measurement point P approaches the position P ′, the point P1 on the left imaging surface 39 shifts to the right side, and the point P2 on the right imaging surface 38 shifts to the left side. The amount of movement of P can be calculated from the amount of movement within this imaging plane. It is necessary to obtain in advance how much the amount of movement of P on the imaging surface corresponds to the amount of movement of P by calibration.

【００１５】次に図２に示すように第１、第２、第３マ
ークのＹＺ座標（３１、３２、３３）から最小２乗法を
用いて高さ方向の２次近似曲線３４を求める。そしてこ
の近似曲線上に存在するボンディングパッドのＹ座標３
５を当てはめることで、ボンディングパッドの位置する
高さ（Ｚ座標）３６が算出できることになる。Next, as shown in FIG. 2, a quadratic approximate curve 34 in the height direction is obtained from the YZ coordinates (31, 32, 33) of the first, second and third marks using the least square method. And the Y coordinate 3 of the bonding pad existing on this approximate curve
By applying 5, the height (Z coordinate) 36 where the bonding pad is located can be calculated.

【００１６】またペレットのその他の辺上に存在するボ
ンディングパッドの高さも同様に求められる。従って別
途計測したワイヤ頂点の高さとボンディングパッドの位
置する高さの差で、ワイヤのループ高さが求められるこ
とになる。Further, the height of the bonding pad existing on the other side of the pellet is similarly obtained. Therefore, the loop height of the wire is obtained from the difference between the height of the wire apex and the height of the bonding pad, which is separately measured.

【００１７】以上詳述したように、ペレット表面の位置
合せ用マークの高さを少なくとも８点計測するだけで、
ペレット４辺に存在する多数のボンディングパッドの位
置するペレット高さを、ペレットの反りを補正したデー
タとして算出できるため、１点づつ計測していた従来方
法に比べ、高速かつ容易にペレット高さ計測が実現でき
るようになる。As described in detail above, the heights of the alignment marks on the pellet surface are measured at least at eight points,
The height of pellets at which many bonding pads on the four sides of the pellet are located can be calculated as data that corrects the warp of the pellets. Will be realized.

【００１８】次に本発明の第２の実施例について図４を
参照して説明する。図４は本発明の第２の実施例に係る
ボンディングパッド高さ計測方法を示す半導体ペレット
周辺の斜視図である。Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 4 is a perspective view around a semiconductor pellet showing a bonding pad height measuring method according to the second embodiment of the present invention.

【００１９】図４に示すように、ペレット４１の上方に
オートフォーカス機能付きＣＣＤカメラ４５が設置され
ており、カメラの画像信号は画像処理装置４７に入力さ
れる。またペレット表面には位置合せマーク５１〜５８
と複数のボンディングパッド４２が各辺毎にに同一線上
に配置されている。位置合せマークおよびボンディング
パッドの平面的な位置情報はペレット設計値からデータ
として、画像処理装置に接続されているコントローラ４
８に予め入力されている。このコントローラで、カメラ
のオートフォーカス機能による位置情報から位置合せマ
ークの高さ演算、および複数の位置合せマークをつない
で得られる曲線の近似曲線方程式の演算が行われる。こ
の例ではペレット表面の周辺に位置合せマークが各辺に
３点、合計で８点存在している。またボンディングパッ
ド４２とインナーリードのボンディング領域４３との間
は、ボンディングワイヤ４４によって接続されている。
なお図面中のＸＹＺは座標軸の定義を行ったものであ
る。As shown in FIG. 4, a CCD camera 45 with an autofocus function is installed above the pellet 41, and the image signal of the camera is input to the image processing device 47. In addition, alignment marks 51-58 are provided on the pellet surface.
And a plurality of bonding pads 42 are arranged on the same line for each side. The planar position information of the alignment mark and the bonding pad is data from the pellet design value as data, and the controller 4 connected to the image processing apparatus.
Pre-filled in 8. With this controller, the height of the alignment mark is calculated from the position information by the autofocus function of the camera, and the approximate curve equation of the curve obtained by connecting a plurality of alignment marks is calculated. In this example, there are 8 alignment marks around the surface of the pellet, 3 on each side. A bonding wire 44 connects the bonding pad 42 and the bonding area 43 of the inner lead.
Note that XYZ in the drawing defines coordinate axes.

【００２０】ボンディングパッド高さ計測方法は、第１
の実施例に類似しており、まず第１のマーク５１の高さ
をオートフォーカス機能付きＣＣＤカメラにより計測す
る。続いて第１マークと同様に第２マークから第８マー
ク（５２〜５８）までステレオ視でマークの存在するペ
レット面の高さを計測する。これによりペレットの各辺
３点ずつのＸ，Ｙ，Ｚ座標が計測できたことになる。The bonding pad height measuring method is the first
Similar to the above embodiment, first, the height of the first mark 51 is measured by a CCD camera with an autofocus function. Subsequently, similarly to the first mark, the height of the pellet surface where the mark exists is measured from the second mark to the eighth mark (52 to 58) in stereoscopic view. As a result, the X, Y, and Z coordinates of three points on each side of the pellet could be measured.

【００２１】次に第１の実施例と同様に、図２に示すよ
うな第１、第２、第３マークのＹＺ座標（３１、３２、
３３）から最小２乗法を用いて高さ方向の２次近似曲線
３４を求める。そしてこの近似曲線上に存在するボンデ
ィングパッドのＹ座標３５を当てはめることで、ボンデ
ィングパッドの位置する高さ（Ｚ座標）３６が算出でき
ることになる。Next, similar to the first embodiment, the YZ coordinates (31, 32, 31) of the first, second and third marks as shown in FIG.
33), the quadratic approximation curve 34 in the height direction is obtained by using the least square method. Then, by fitting the Y coordinate 35 of the bonding pad existing on this approximate curve, the height (Z coordinate) 36 at which the bonding pad is located can be calculated.

【００２２】上記実施例では、ペレット各辺３点づつし
か計測していないが、計測点数を増やしてもよい。計測
点数を増やすことは、近似精度が向上しループ高さ計測
精度向上につながる。また上記実施例ではボンディング
パッド高さを２次曲線で近似したが、球関数による近似
でも構わない。また位置合せマークはボンディングパッ
ドの空きパッドを利用してもよい。In the above embodiment, only three points are measured on each side of the pellet, but the number of measurement points may be increased. Increasing the number of measurement points improves the approximation accuracy and improves the loop height measurement accuracy. Further, in the above embodiment, the bonding pad height is approximated by a quadratic curve, but it may be approximated by a spherical function. An empty pad of the bonding pad may be used as the alignment mark.

【００２３】[0023]

【発明の効果】本発明によれば、２台のカメラによるス
テレオ視により、あるいはオートフォーカス機能付きカ
メラにより、ボンディングパッド高さの計測を高速に行
うことができる。これによりワイヤループの計測が正確
かつ高速に行うことができるようになり、ボンディング
外観検査の自動化が可能になる。According to the present invention, the height of the bonding pad can be measured at high speed by stereoscopic viewing by two cameras or by a camera with an autofocus function. As a result, the wire loop can be measured accurately and at high speed, and the bonding visual inspection can be automated.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１の実施例に係るボンディングパッ
ド高さ計測方法を説明するための半導体ペレット周辺の
斜視図。FIG. 1 is a perspective view of a periphery of a semiconductor pellet for explaining a bonding pad height measuring method according to a first embodiment of the present invention.

【図２】位置合せマークの座標からボンディングパッド
の座標を算出する原理を説明する模式図。FIG. 2 is a schematic diagram illustrating the principle of calculating the coordinates of a bonding pad from the coordinates of alignment marks.

【図３】ステレオ視による位置計測の原理を説明する模
式図。FIG. 3 is a schematic diagram illustrating the principle of position measurement by stereo vision.

【図４】本発明の第２の実施例に係るボンディングパッ
ド高さ計測方法を説明するための半導体ペレット周辺の
斜視図。FIG. 4 is a perspective view around a semiconductor pellet for explaining a bonding pad height measuring method according to a second embodiment of the present invention.

【図５】ループ高さを説明するための半導体装置の断面
図。FIG. 5 is a cross-sectional view of a semiconductor device for explaining a loop height.

【符号の説明】[Explanation of symbols]

１１…半導体ペレット、１２…ボンディングパッド、１
３…インナーリードボンディング領域、１４…ボンディ
ングワイヤ、１５、１６…カメラ、１７…画像処理装
置、１８…コントローラ、２１〜２８…位置合せマーク11 ... Semiconductor pellet, 12 ... Bonding pad, 1
3 ... Inner lead bonding area, 14 ... Bonding wire, 15, 16 ... Camera, 17 ... Image processing device, 18 ... Controller, 21-28 ... Alignment mark

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 １主面の周辺の同一線上に配置された複
数のボンディングパッドと複数の位置合せマークを有
し、他の主面が外囲器部品に接着された半導体ペレット
を基準面に保持し、 前記半導体ペレットの各辺に設けられた少なくとも３点
の前記位置合せマークの３次元座標を計測し、 計測された前記少なくとも３点の３次元座標より近似曲
線の方程式を算出し、 前記近似曲線上に配置された前記複数のボンディングパ
ッドの前記基準面上の２次元座標を前記方程式に代入す
ることにより、前記複数のボンディングパッドの前記基
準面よりの距離を求めることを特徴とするボンディング
パッド高さ計測方法。1. A semiconductor pellet having a plurality of bonding pads and a plurality of alignment marks arranged on the same line around one main surface and having another main surface adhered to an envelope component as a reference surface. Holding, measuring the three-dimensional coordinates of the alignment marks of at least three points provided on each side of the semiconductor pellet, calculating an equation of an approximate curve from the measured three-dimensional coordinates of the at least three points, Bonding characterized in that the two-dimensional coordinates of the plurality of bonding pads arranged on the approximate curve on the reference plane are substituted into the equation to obtain the distances of the plurality of bonding pads from the reference plane. Pad height measurement method. 【請求項２】 前記位置合せマークの３次元座標の計測
方法は、２台のカメラによるステレオ視によるものであ
ることを特徴とする請求項１記載のボンディングパッド
高さ計測方法。2. The bonding pad height measuring method according to claim 1, wherein the measuring method of the three-dimensional coordinates of the alignment mark is a stereoscopic view by two cameras. 【請求項３】 前記位置合せマークの３次元座標の計測
方法は、オートフォーカス付きのカメラによるものであ
ることを特徴とする請求項１記載のボンディングパッド
高さ計測方法。3. The bonding pad height measuring method according to claim 1, wherein the measuring method of the three-dimensional coordinates of the alignment mark is a camera with autofocus.
JP7165092A 1995-06-30 1995-06-30 Method of measuring level of bonding pad Pending JPH0917818A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7165092A JPH0917818A (en) 1995-06-30 1995-06-30 Method of measuring level of bonding pad

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7165092A JPH0917818A (en) 1995-06-30 1995-06-30 Method of measuring level of bonding pad

Publications (1)

Publication Number Publication Date
JPH0917818A true JPH0917818A (en) 1997-01-17

Family

ID=15805741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7165092A Pending JPH0917818A (en) 1995-06-30 1995-06-30 Method of measuring level of bonding pad

Country Status (1)

Country Link
JP (1) JPH0917818A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106030283A (en) * 2013-11-11 2016-10-12 赛世科技私人有限公司 An apparatus and method for inspecting a semiconductor package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106030283A (en) * 2013-11-11 2016-10-12 赛世科技私人有限公司 An apparatus and method for inspecting a semiconductor package

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