JPH09148549A - Color solid image pickup element with on-chip lens - Google Patents
Color solid image pickup element with on-chip lensInfo
- Publication number
- JPH09148549A JPH09148549A JP7329769A JP32976995A JPH09148549A JP H09148549 A JPH09148549 A JP H09148549A JP 7329769 A JP7329769 A JP 7329769A JP 32976995 A JP32976995 A JP 32976995A JP H09148549 A JPH09148549 A JP H09148549A
- Authority
- JP
- Japan
- Prior art keywords
- color
- sensitivity
- chip lens
- lens
- color filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、各画素に対応して
その受光素子に集光するオンチップレンズを備えたオン
チップレンズ付カラー固体撮像素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a color solid-state image pickup device with an on-chip lens, which has an on-chip lens for collecting light on a light receiving element corresponding to each pixel.
【０００２】[0002]
【従来の技術】カラー固体撮像素子は、一般に基板表面
に赤、青、緑の原色フィルタ、あるいはシアン、マゼン
タ等の補色フィルタ等を適宜配置した色フィルタを有し
ている。そして、斯かるカラー固体撮像素子には各画素
毎にその受光素子に集光して画素の感度を上げるレンズ
素子（マイクロレンズ）を備えたものが多い。図４はそ
のようなオンチップレンズ付カラー固体撮像素子の従来
例の一つを示す断面図である。2. Description of the Related Art Generally, a color solid-state image pickup device has a color filter in which red, blue and green primary color filters or complementary color filters such as cyan and magenta are appropriately arranged on a substrate surface. Many of such color solid-state imaging devices are provided with a lens element (microlens) for each pixel for condensing on the light receiving element to increase the sensitivity of the pixel. FIG. 4 is a sectional view showing one of conventional examples of such a color solid-state image pickup device with an on-chip lens.
【０００３】同図において、１は半導体基板、２、２、
・・・は各画素の受光素子、３は基板１表面に形成され
た平坦化膜で、色フィルタ４、４、・・・の下地を成
す。尚、基板１上にはゲート絶縁膜、転送電極、層間絶
縁膜、遮光膜等があり、その上に平坦化膜３があるが、
これらの図示、説明を省略する。色フィルタ４、４、・
・・は透明樹脂を形成し、これに染料を添加してなる。
５は透明樹脂からなり、表面を凸球面状に形成すること
により形成されたオンチップレンズで、凸レンズとして
機能する。従って、被写体側から結像用レンズを通して
各画素に向けてきた光をその画素の受光素子２、２、・
・・に比較的有効に集光することができる。In the figure, 1 is a semiconductor substrate, 2, 2,
Is a light receiving element of each pixel, 3 is a flattening film formed on the surface of the substrate 1, and forms a base of the color filters 4, 4 ,. There are a gate insulating film, a transfer electrode, an interlayer insulating film, a light-shielding film, etc. on the substrate 1, and a flattening film 3 on it.
Illustration and description of these are omitted. Color filters 4, 4, ...
・ ・ Is formed by forming a transparent resin and adding a dye to it.
Reference numeral 5 is an on-chip lens made of a transparent resin and having a convex spherical surface, and functions as a convex lens. Therefore, the light directed from the subject side to each pixel through the imaging lens is received by the light receiving elements 2, 2 ,.
.. can focus light relatively effectively.
【０００４】図５（Ａ）乃至（Ｅ）は図４に示したオン
チップレンズ付カラー固体撮像素子の製造方法を工程順
に示す断面図である。 （Ａ）半導体基板１表面部に図５（Ａ）に示すように受
光素子２、２、・・・を始め、図面に現れない垂直レジ
スタ、水平レジスタ等必要なものを形成し、更に、基板
１表面上に転送電極、層間絶縁膜、遮光膜（Ａｌ）など
を形成する。 （Ｂ）次に、図５（Ｂ）に示すように、平坦化膜３を形
成する。該平坦化膜３表面の半導体基板１表面からの高
さは例えば１．５〜３μｍである。5A to 5E are cross-sectional views showing a method of manufacturing the color solid-state image pickup device with an on-chip lens shown in FIG. 4 in the order of steps. (A) As shown in FIG. 5 (A), necessary elements such as light receiving elements 2, 2, ..., Vertical registers and horizontal registers not shown in the drawing are formed on the surface of the semiconductor substrate 1, and the substrate is further formed. A transfer electrode, an interlayer insulating film, a light shielding film (Al), etc. are formed on one surface. (B) Next, as shown in FIG. 5B, the flattening film 3 is formed. The height of the surface of the flattening film 3 from the surface of the semiconductor substrate 1 is, for example, 1.5 to 3 μm.
【０００５】（Ｃ）次に、図５（Ｃ）に示すように色フ
ィルタ４、４、・・・を形成する。該色フィルタ４は染
料あるいは顔料を添加した樹脂をパターニングすること
により１色分の色フィルタを形成することを必要な色分
複数回繰り返すことにより行うとか、一旦全面的に透明
樹脂を形成し、その後、選択的に染色することを複数回
繰り返すという方法により形成される。 （Ｄ）次に、図５（Ｄ）に示すように、保護膜（膜厚例
えば３〜４μｍ）６を塗布する。該保護膜６は例えばＳ
ＯＧからなり、レンズ５を成す透明樹脂と略等しいエッ
チング速度を有している。(C) Next, as shown in FIG. 5C, color filters 4, 4, ... Are formed. The color filter 4 is formed by patterning a resin to which a dye or a pigment is added to form a color filter for one color by repeating a plurality of times for a required color, or once forming a transparent resin on the entire surface. After that, it is formed by a method of repeating selective dyeing a plurality of times. (D) Next, as shown in FIG. 5D, a protective film (thickness, for example, 3 to 4 μm) 6 is applied. The protective film 6 is, for example, S
It is made of OG and has an etching rate almost equal to that of the transparent resin forming the lens 5.
【０００６】（Ｅ）次に、上記保護膜６上に、オンチッ
プレンズとなる透明樹脂を形成し、該透明樹脂を各画素
毎に互いに独立して他から分離するようにするエッチン
グをし、その後、リフロー処理することにより各独立し
た透明樹脂の表面を、図５（Ｅ）に示すように、凸球面
状にしてオンチップレンズ５、５、・・・とする。この
各レンズ５、５、・・・の高さ（保護膜表面からの高
さ）は例えば２〜３μｍである。その後、そのレンズ
５、５、・・・及び保護膜６をエッチングバックするこ
とにより図４に示すオンチップレンズ付カラー固体撮像
素子が出来上がる。そして、従来においては、各オンチ
ップレンズ５、５、・・・はどの色の画素であろうがす
べて同じ高さにされていた。(E) Next, a transparent resin to be an on-chip lens is formed on the protective film 6, and etching is performed so that the transparent resin is separated from each other independently for each pixel. Then, the surface of each independent transparent resin is subjected to a reflow process to form a convex spherical surface into on-chip lenses 5, 5, ... As shown in FIG. The height of each of the lenses 5, 5, ... (Height from the surface of the protective film) is, for example, 2 to 3 μm. After that, the lenses 5, 5, ... And the protective film 6 are etched back to complete the color solid-state imaging device with an on-chip lens shown in FIG. In the past, each of the on-chip lenses 5, 5, ... Has the same height regardless of the color of the pixel.
【０００７】[0007]
【発明が解決しようとする課題】ところで、従来のオン
チップレンズ付カラー固体撮像素子には、先ず第１に、
オンチップレンズ５、５、・・・が色フィルタ４上に形
成され、オンチップレンズの基板１の表面からの高さが
高くなり、受光素子に有効に集光できず、感度を充分に
上げることが難しいという問題があった。即ち、基板１
表面の層間絶縁膜を介して例えば２層あるいは３層等多
層構造に形成された転送電極上に遮光膜を形成し、更
に、該遮光膜上に平坦化膜３を形成し、その上に色フィ
ルタ４、４、・・・を形成し、該色フィルタ４、４、・
・・上に保護膜６を形成し、該保護膜６上にオンチップ
レンズ５、５、・・・を形成するので、エッチングバッ
クにより若干低くなるとはいえ、オンチップレンズ５、
５、・・・の高さは相当に高く、そのために、感度を高
くすることが難しく、集光ずれが発生し易かったのであ
る。By the way, in the conventional color solid-state image pickup device with an on-chip lens, first of all,
The on-chip lenses 5, 5, ... Are formed on the color filter 4, and the height of the on-chip lens from the surface of the substrate 1 is increased, so that the light cannot be effectively focused on the light receiving element, and the sensitivity is sufficiently increased. There was a problem that it was difficult. That is, the substrate 1
A light-shielding film is formed on a transfer electrode formed in a multi-layer structure such as two layers or three layers via an interlayer insulating film on the surface, and a flattening film 3 is further formed on the light-shielding film, and a color is formed on the flattening film 3. .. are formed, and the color filters 4, 4, ...
.. Since the protective film 6 is formed on the protective film 6 and the on-chip lenses 5, 5, ... Are formed on the protective film 6, the on-chip lens 5, although it is slightly lowered by etching back,
The heights of 5 and so on are considerably high, which makes it difficult to increase the sensitivity and easily causes deviation of light collection.
【０００８】また、色フィルタ４、４、・・・とオンチ
ップレンズ５、５、・・・を別々に形成することは、工
程数の増大を招き、製造コストの増大に繋がるという問
題もあった。そこで、色フィルタそのものでレンズを形
成することが試みられた。即ち、各色フィルタの表面を
凸球面状にしてオンチップレンズとしての機能を発揮さ
せるのである。Further, the formation of the color filters 4, 4, ... And the on-chip lenses 5, 5, ... Separately causes an increase in the number of steps, which leads to an increase in manufacturing cost. It was Therefore, it has been attempted to form a lens with the color filter itself. That is, the surface of each color filter is formed into a convex spherical surface so that the function as an on-chip lens is exhibited.
【０００９】しかし、従来においては、色の異なる画素
間で感度の齟齬が生じるという問題があった。というの
は、画素は色フィルタの光透過率等の違いにより色毎に
感度が異なり、原色フィルタを例に採ると、緑が最も高
感度で、次に赤の感度が高く、青が最も低感度である。
従って、同じ構造であってもその色フィルタによる感度
差ができた。However, in the past, there was a problem in that there was a discrepancy in sensitivity between pixels of different colors. This is because pixels have different sensitivities for each color due to differences in light transmittance of color filters. Taking primary color filters as an example, green has the highest sensitivity, red has the next highest sensitivity, and blue has the lowest. It is sensitivity.
Therefore, even if the structure is the same, a difference in sensitivity can be caused by the color filters.
【００１０】斯かる感度差は撮像画像の色再現性を低減
する要因となり、好ましくない。そこで、本発明者はそ
の問題を克服すべく模索し、オンチップレンズの高さに
より集光効率を異ならせることにより色フィルタの感度
差を補償するという着想を得た。即ち、オンチップレン
ズの高さにより集光効率が異なる。図６（Ａ）乃至
（Ｃ）はレンズの大きさ、高さにより集光特性が異なる
ことを示すものである。そして、レンズの大きさは各画
素の大きさが一定なので大きさを異ならせることができ
ない。そこで、レンズの高さを色毎に異ならせることに
より集光効率を異ならせて、色フィルタによる感度差の
違いをなくすという着想が生まれた。本発明は斯かる着
想に基づいて為されたものである。Such a sensitivity difference is a factor that reduces the color reproducibility of the picked-up image and is not preferable. Therefore, the present inventor has sought to overcome the problem, and has an idea of compensating for the difference in sensitivity of the color filters by varying the light collection efficiency depending on the height of the on-chip lens. That is, the light collection efficiency varies depending on the height of the on-chip lens. FIGS. 6A to 6C show that the condensing characteristics differ depending on the size and height of the lens. The size of the lens cannot be different because the size of each pixel is constant. Therefore, the idea was born to make the height of the lens different for each color to make the light collection efficiency different so as to eliminate the difference in the sensitivity difference due to the color filters. The present invention was made based on this idea.
【００１１】即ち、本発明は色フィルタの色の違いに起
因する各色間の感度差をなくしてより良好な色再現性を
得るようにすることを可能にすることを目的とする。That is, an object of the present invention is to eliminate the difference in sensitivity between the colors due to the difference in the colors of the color filters and to obtain better color reproducibility.
【００１２】[0012]
【課題を解決するための手段】本発明オンチップレンズ
付カラー固体撮像素子は、オンチップレンズが色フィル
タにより形成され、該色フィルタの各色毎の画素の感度
に応じてその画素のオンチップレンズの高さを異ならせ
てなることを特徴とする。従って、本発明オンチップレ
ンズ付カラー固体撮像素子によれば、色フィルタとオン
チップレンズを別個に形成するわけではないので、色フ
ィルタの厚さ分オンチップレンズの高さを低くすること
ができ、延いては、全体的に感度を高くすることができ
るのみならず、製造工数を少なくでき、延いては、製造
コストの低減を図ることができるうえに、色フィルタに
よる各色毎の感度の違いに応じて感度の低い画素につい
てはオンチップレンズを感度が高くなる高さにし、その
逆のときは感度が低くなる高さにすることにより画素の
色間の色フィルタによる感度差を是正することができ
る。In the color solid-state image pickup device with an on-chip lens of the present invention, the on-chip lens is formed by a color filter, and the on-chip lens of the pixel is formed according to the sensitivity of the pixel for each color of the color filter. It is characterized by different heights of. Therefore, according to the color solid-state image sensor with the on-chip lens of the present invention, the color filter and the on-chip lens are not separately formed, and therefore the height of the on-chip lens can be reduced by the thickness of the color filter. Not only can the sensitivity be increased overall, the number of manufacturing steps can be reduced, which in turn can reduce the manufacturing cost, and the difference in sensitivity for each color due to the color filter. For pixels with low sensitivity, the height of the on-chip lens should be increased to increase the sensitivity, and in the opposite case, the sensitivity should be decreased to correct the sensitivity difference due to the color filter between pixel colors. You can
【００１３】[0013]
【発明の実施の形態】以下、本発明を図示実施の形態に
従って詳細に説明する。図１は本発明オンチップレンズ
付カラー固体撮像素子の一つの実施の形態を示す断面図
である。図面において、１は半導体基板、２、２、・・
・は該基板１の表面部に形成された受光素子、３は該基
板１表面に形成された平坦化膜である。尚、基板１上に
はゲート絶縁膜、転送電極、層間絶縁膜、遮光膜等があ
り、その上に平坦化膜３があるが、これら、即ちゲート
絶縁膜、転送電極等の図示、説明を省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments. FIG. 1 is a sectional view showing an embodiment of a color solid-state image pickup device with an on-chip lens according to the present invention. In the drawings, 1 is a semiconductor substrate, 2, 2, ...
Is a light receiving element formed on the surface of the substrate 1, and 3 is a flattening film formed on the surface of the substrate 1. There are a gate insulating film, a transfer electrode, an interlayer insulating film, a light-shielding film, etc. on the substrate 1, and a flattening film 3 thereon. That is, the gate insulating film, the transfer electrode, etc. are shown and described. Omit it.
【００１４】７、７、・・・は平坦化膜３上に形成され
た色フィルタで、７r 、７ｒ、・・・は赤の、７ｇ、７
ｇ、・・・は緑の、７ｂ、７ｂ、・・・は青の色フィル
タである。該色フィルタ７ｒ、７ｇ、７ｂ、７ｒ、７
ｇ、７ｂ、・・・はオンチップレンズとしても機能する
ように表面が凸球面状に形成されている。そして、オン
チップレンズ７ｒ、７ｇ、７ｂ７ｒ、７ｇ、７ｂ・・・
は色毎に高さが異ならしめられている。即ち、緑の色フ
ィルタ７ｇ、７ｇ、・・・は最も高く形成されている。
これは、緑の色フィルタ７ｇ、７ｇ・・・が他の二つの
原色の色フィルタ７ｒ、７ｒ、・・・、７ｂ、７ｂ、・
・・に比較して画素の感度が高くなることから、相対的
に感度を低めるためにはレンズ高さを高くして集光効率
を悪くする必要があるからである。.. are color filters formed on the flattening film 3, and 7r, 7r ,.
, g are green color filters, and 7b, 7b, ... Blue color filters. The color filters 7r, 7g, 7b, 7r, 7
The surfaces of g, 7b, ... Are formed in a convex spherical shape so as to also function as an on-chip lens. The on-chip lenses 7r, 7g, 7b7r, 7g, 7b ...
Has different heights for each color. That is, the green color filters 7g, 7g, ... Are formed to have the highest height.
This is because the green color filters 7g, 7g ... Are the other two primary color filters 7r, 7r, ..., 7b, 7b.
This is because the sensitivity of the pixel becomes higher than that of .., so that in order to relatively lower the sensitivity, it is necessary to increase the lens height to deteriorate the light collection efficiency.
【００１５】赤の色フィルタ７ｒ、７ｒ、・・・はそれ
に次ぐ高さに形成されている。これは赤の色フィルタ７
ｒが緑の色フィルタ７ｇに次いで画素の感度が高くなる
からである。そして、最も感度が悪くなる色フィルタ７
ｂ、７ｂ、・・・のレンズ高さを最も低くして集光効率
を低くすることによって感度が高くなるようにしてな
る。このようなオンチップレンズ付カラー固体撮像素子
によれば、色フィルタ７ｒ、７ｇ、７ｂ、７ｒ、７ｇ、
７ｂ・・・がそのままオンチップレンズを成すので、製
造工数が従来よりも少なくて済み、延いては、製造コス
トの低減を図ることができる。The red color filters 7r, 7r, ... Are formed at the next highest height. This is the red color filter 7
This is because the sensitivity of the pixel becomes higher next to the color filter 7g in which r is green. Then, the color filter 7 having the lowest sensitivity
The sensitivity is increased by making the lens heights b, 7b, ... According to such a color solid-state imaging device with an on-chip lens, the color filters 7r, 7g, 7b, 7r, 7g,
Since 7b ... Form the on-chip lens as they are, the number of manufacturing steps can be reduced as compared with the conventional case, and as a result, the manufacturing cost can be reduced.
【００１６】そして、オンチップレンズ７ｒ、７ｇ、７
ｂ、７ｒ、７ｇ、７ｂ・・・の基板１表面からの高さ
を、色フィルタの色の違いによる感度差に応じて画素の
最終的感度が一定になるように、異ならせたので、画素
の感度差をなくすことができ、延いては、撮像画像の色
再現性を高めることができる。The on-chip lenses 7r, 7g, 7
The heights of b, 7r, 7g, 7b, ... From the surface of the substrate 1 are made different so that the final sensitivity of the pixel becomes constant according to the difference in sensitivity due to the difference in color of the color filters. It is possible to eliminate the difference in sensitivity, and it is possible to improve the color reproducibility of the captured image.
【００１７】図２（Ａ）乃至（Ｅ）及び図３（Ｆ）乃至
（Ｋ）は図１に示したオンチップレンズ付カラー固体撮
像素子の製造方法を工程順（Ａ）〜（Ｋ）に示す断面図
である。 （Ａ）半導体基板１表面部に図２（Ａ）に示すように受
光素子２、２、・・・を始め、図面に現れない垂直レジ
スタ、水平レジスタ等必要なものを形成し、更に、基板
１表面上に便宜上図示を省略した転送電極、層間絶縁
膜、遮光膜（Ａｌ）などを形成する。 （Ｂ）次に、図２（Ｂ）に示すように、平坦化膜３を形
成する。該平坦化膜３表面の半導体基板１表面からの高
さは例えば１．５〜３μｍである。2 (A) to 2 (E) and 3 (F) to (K), the manufacturing method of the color solid-state image pickup device with the on-chip lens shown in FIG. 1 will be described in the order of steps (A) to (K). It is sectional drawing shown. (A) As shown in FIG. 2 (A), necessary elements such as light receiving elements 2, 2, ..., Vertical registers and horizontal registers not shown in the drawing are formed on the surface of the semiconductor substrate 1, and the substrate is further formed. Transfer electrodes, interlayer insulating films, light-shielding films (Al), etc., which are not shown for convenience, are formed on one surface. (B) Next, as shown in FIG. 2B, the flattening film 3 is formed. The height of the surface of the flattening film 3 from the surface of the semiconductor substrate 1 is, for example, 1.5 to 3 μm.
【００１８】（Ｃ）次に、図２（Ｃ）に示すように、あ
る厚さ、例えば５μｍ程度の緑フィルタ形成用のレジス
ト膜７ｇを形成する。該レジスト膜７ｇは透明レジスト
に緑の染料あるいは顔料を添加してなるものである。 （Ｄ）次に、上記緑フィルタ形成用レジスト膜７ｇを露
光、現像によって選択的にエッチングすることにより、
図２（Ｄ）に示すように、緑のフィルタを形成すべき部
分のみに残存させるようにする。(C) Next, as shown in FIG. 2C, a resist film 7g for forming a green filter having a certain thickness, for example, about 5 μm is formed. The resist film 7g is formed by adding a green dye or pigment to a transparent resist. (D) Next, by selectively etching the green filter forming resist film 7g by exposure and development,
As shown in FIG. 2D, the green filter is left only in the portion where it should be formed.
【００１９】（Ｅ）次に、加熱処理により、上記緑フィ
ルタ形成用レジスト膜７ｇを図２（Ｅ）に示すように、
リフローしてレンズ状にすることによりオンチップレン
ズとしても機能するようにする。即ち、色フィルタ７ｇ
は緑の色フィルタでもありまたオンチップレンズでもあ
る。 （Ｆ）次に、図３（Ｆ）に示すように、工程（Ｃ）で形
成した上記緑フィルタ形成用の色フィルタ７ｇよりも適
宜薄くされた赤フィルタ形成用のレジスト膜７ｒを形成
する。該レジスト膜７ｒは透明レジストに赤の染料ある
いは顔料を添加してなるものである。尚、上述のように
赤色フィルタ形成用レジスト膜７ｒを緑色フィルタ形成
用レジスト膜７ｇよりも薄く形成するのは、レジストの
光透過率等の関係で赤の画素の感度が緑の画素の感度よ
りも低くなるために、レンズ高さを低くして感度不足を
補償するためである。(E) Next, the green filter forming resist film 7g is subjected to a heat treatment as shown in FIG.
By reflowing into a lens shape, it also functions as an on-chip lens. That is, the color filter 7g
Is both a green filter and an on-chip lens. (F) Next, as shown in FIG. 3F, a resist film 7r for forming a red filter, which is appropriately thinner than the color filter 7g for forming the green filter formed in the step (C), is formed. The resist film 7r is formed by adding a red dye or pigment to a transparent resist. As described above, the reason why the red filter forming resist film 7r is made thinner than the green filter forming resist film 7g is that the sensitivity of the red pixel is higher than that of the green pixel due to the light transmittance of the resist. This is because the lens height is lowered and the lens height is lowered to compensate for the lack of sensitivity.
【００２０】（Ｇ）次に、上記赤フィルタ形成用のレジ
スト膜７ｒを露光、現像によって選択的エッチングする
ことにより、図３（Ｇ）に示すように、赤のフィルタを
形成すべき部分のに残存させるようにする。 （Ｈ）次に、加熱処理により、上記赤フィルタ形成用レ
ジスト膜７ｒを図３（Ｈ）に示すように、リフローして
レンズ状にすることによりオンチップレンズとしても機
能するようにする。即ち、色フィルタ７ｒは赤の色フィ
ルタでもありまたオンチップレンズでもある。(G) Next, by selectively etching the resist film 7r for forming the red filter by exposure and development, as shown in FIG. 3 (G), a portion where a red filter is to be formed is formed. Let it remain. (H) Next, by heat treatment, the red filter forming resist film 7r is reflowed into a lens shape as shown in FIG. 3H so that it also functions as an on-chip lens. That is, the color filter 7r is both a red color filter and an on-chip lens.
【００２１】（Ｉ）次に、図３（Ｉ）に示すように、工
程（Ｆ）で形成した上記赤フィルタ形成用の色フィルタ
７ｒよりも適宜薄くされた青フィルタ形成用のレジスト
膜７ｂを形成する。該レジスト膜７ｂは透明レジストに
青の染料あるいは顔料を添加してなるものである。尚、
上述のように青色フィルタ形成用レジスト膜７ｂを赤色
フィルタ形成用レジスト膜７ｒよりも薄く形成するの
は、染料あるいは顔料を添加したレジストの光透過率等
の関係で青の画素の感度が赤の画素の感度よりも低くな
ることから、レンズ高さを低くして感度不足を補償する
ためである。(I) Next, as shown in FIG. 3 (I), a blue filter forming resist film 7b, which is appropriately thinner than the red filter forming color filter 7r formed in the step (F), is formed. Form. The resist film 7b is formed by adding a blue dye or pigment to a transparent resist. still,
As described above, the reason why the blue filter forming resist film 7b is formed thinner than the red filter forming resist film 7r is that the sensitivity of the blue pixel is red because of the light transmittance of the resist to which the dye or pigment is added. This is because it is lower than the sensitivity of the pixel, so that the lens height is lowered to compensate for the lack of sensitivity.
【００２２】（Ｊ）次に、上記青フィルタ形成用のレジ
スト膜７b を露光、現像によって選択的エッチングする
ことにより、図３（Ｊ）に示すように、赤のフィルタを
形成すべき部分のに残存させるようにする。 （Ｋ）次に、次に、加熱処理により、上記赤フィルタ形
成用レジスト膜７ｒを図３（Ｋ）に示すように、リフロ
ーしてレンズ状にすることによりオンチップレンズとし
ても機能するようにする。即ち、色フィルタ７ｂは緑の
色フィルタでもあり、またオンチップレンズでもある。(J) Next, the resist film 7b for forming the blue filter is selectively etched by exposure and development, so that a portion for forming a red filter is formed as shown in FIG. 3 (J). Let it remain. (K) Next, by heat treatment, the red filter forming resist film 7r is reflowed into a lens shape as shown in FIG. 3 (K) so that it also functions as an on-chip lens. To do. That is, the color filter 7b is both a green color filter and an on-chip lens.
【００２３】このような方法によれば、色フィルタ形成
用のレジスト膜７ｇ、７ｒ、７b の厚さを変えることに
より、オンチップレンズの高さを変えて各色間の感度差
の補償をした図１に示すオンチップレンズ付カラー固体
撮像素子を得ることができる。尚、本固体撮像素子は、
色毎に膜厚の異なる色フィルタ４、例えば原色フィルタ
の場合、緑、赤、青の三色分というように必要分を上述
した例の如く厚さを変えて形成し、その後、その表面に
例えば透明レジストからなるレンズ材を塗布形成し、そ
の後、該レンズ材を選択的にエッチングして各レンズ素
子を形成すべき領域を他から分離し、その後、加熱によ
りリフローしてその表面を凸球面状にすることにより集
光機能を持つようにし、その後、該各オンチップレンズ
及び上記フィルタをエッチバックすることによりフィル
タ兼用の高さの異なるオンチップレンズを形成するよう
な方法で製造しても良い。また、上記実施の形態は本発
明を原色フィルタタイプのオンチップレンズ付カラー固
体撮像素子に適用したものであったが、本発明は原色フ
ィルタのみならず補色フィルタのオンチップレンズ付カ
ラー固体撮像素子にも適用できることはいうまでもな
い。According to such a method, the height of the on-chip lens is changed by changing the thickness of the resist films 7g, 7r, 7b for forming the color filter, thereby compensating for the sensitivity difference between the respective colors. It is possible to obtain the color solid-state imaging device with an on-chip lens shown in FIG. The solid-state image sensor is
In the case of a color filter 4 having a different film thickness for each color, for example, a primary color filter, necessary portions such as three colors of green, red, and blue are formed by changing the thickness as in the above-described example, and then the surface is formed. For example, a lens material made of a transparent resist is applied and formed, and then the lens material is selectively etched to separate the area where each lens element is to be formed from the others, and then reflowed by heating to make the surface a convex spherical surface. To have a condensing function by forming the above shape, and thereafter, by etching back each of the on-chip lenses and the above-mentioned filter, the on-chip lenses having different heights also serving as the filters are formed. good. Further, in the above-described embodiment, the present invention is applied to a primary color filter type color solid-state imaging device with an on-chip lens, but the present invention is not limited to the primary color filter but a complementary color filter with an on-chip lens color solid-state imaging device. It goes without saying that it can also be applied to.
【００２４】[0024]
【発明の効果】本発明オンチップレンズ付カラー固体撮
像素子によれば、色フィルタとオンチップレンズを別個
に形成するわけではないので、色フィルタの厚さ分オン
チップレンズの高さを低くすることができ、延いては、
全体的に感度を高くすることができるのみならず、製造
工数を少なくでき、延いては、製造コストの低減を図る
ことができるうえに、色フィルタによる各色毎の感度の
違いに応じて感度の低い画素についてはオンチップレン
ズを感度が高くなる高さにし、その逆のときは感度が低
くなる高さにすることにより画素の色間の色フィルタに
よる感度差を是正することができる。According to the color solid-state image pickup device with an on-chip lens of the present invention, since the color filter and the on-chip lens are not separately formed, the height of the on-chip lens is reduced by the thickness of the color filter. You can
Not only can the sensitivity be increased overall, the number of manufacturing steps can be reduced, which in turn can reduce the manufacturing cost, and the sensitivity can be adjusted according to the difference in sensitivity for each color due to the color filter. By setting the height of the on-chip lens for low pixels to be high sensitivity, and vice versa, the sensitivity difference due to the color filter between the colors of pixels can be corrected.
【図１】本発明の第１の実施の形態を示す断面図であ
る。FIG. 1 is a cross-sectional view showing a first embodiment of the present invention.
【図２】（Ａ）乃至（Ｅ）は第１の実施の形態のオンチ
ップレンズ付カラー固体撮像素子の製造方法の工程
（Ａ）乃至（Ｅ）を順に示す断面図である。2A to 2E are cross-sectional views sequentially showing steps (A) to (E) of the method of manufacturing the color solid-state imaging device with an on-chip lens according to the first embodiment.
【図３】（Ｆ）乃至（Ｋ）は第１の実施の形態のオンチ
ップレンズ付カラー固体撮像素子の製造方法の工程
（Ｆ）乃至（Ｋ）を工程順に示す断面図である。3 (F) to (K) are cross-sectional views showing steps (F) to (K) of the method of manufacturing the color solid-state imaging device with an on-chip lens according to the first embodiment in the order of steps.
【図４】従来例を示す断面図である。FIG. 4 is a sectional view showing a conventional example.
【図５】（Ａ）乃至（Ｅ）は図４に示した従来例の製造
方法を工程順に示す断面図である。5A to 5E are cross-sectional views showing the manufacturing method of the conventional example shown in FIG. 4 in process order.
【図６】（Ａ）乃至（Ｃ）はオンチップレンズの大き
さ、高さによる集光特性の違いを説明する断面図であ
る。FIG. 6A to FIG. 6C are cross-sectional views for explaining the difference in light-condensing characteristics depending on the size and height of the on-chip lens.
１ 半導体基板 ２ 受光素子 ３ 平坦化膜 ７ｒ、７ｇ、７ｂ 色フィルタからなるオンチップレン
ズ1 semiconductor substrate 2 light receiving element 3 flattening film 7r, 7g, 7b on-chip lens composed of color filters
Claims (1)
るオンチップレンズを備えたオンチップレンズ付カラー
固体撮像素子において、 上記オンチップレンズが色フィルタにより形成され、 上記色フィルタの各色毎の画素の感度に応じてその画素
のオンチップレンズの高さを異ならせてなることを特徴
とするオンチップレンズ付カラー固体撮像素子1. A color solid-state imaging device with an on-chip lens, comprising an on-chip lens for collecting light on a light-receiving element corresponding to each pixel, wherein the on-chip lens is formed by a color filter, and each color of the color filter is formed. A color solid-state image sensor with an on-chip lens, characterized in that the height of the on-chip lens of each pixel is changed according to the sensitivity of each pixel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7329769A JPH09148549A (en) | 1995-11-25 | 1995-11-25 | Color solid image pickup element with on-chip lens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7329769A JPH09148549A (en) | 1995-11-25 | 1995-11-25 | Color solid image pickup element with on-chip lens |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09148549A true JPH09148549A (en) | 1997-06-06 |
Family
ID=18225070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7329769A Pending JPH09148549A (en) | 1995-11-25 | 1995-11-25 | Color solid image pickup element with on-chip lens |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09148549A (en) |
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