JPH09102580A - Resin-sealed semiconductor device and fabrication thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin-sealed semiconductor device which is improved in its insulating and heat-radiating characteristics. SOLUTION: A power semiconductor device 12, a controlling integrated circuit device 13, etc., are mounted on metallic substrates 11a and 11b which are made by blanking operation to form part of a circuit. The devices and substrate are connected by a metallic thin wire 15. The metal substrates 11a and 11b are sealingly fixedly molded with first molding resin 16 having a high thermal conductivity between the substrates and on their bottom sides. The metal substrates 11a and 11b having the power semiconductor device 12 and so on mounted thereon are further molded and sealed with second molding resin 17 having a high thermal conductivity. One ends of the metal substrates 11a and 11b form external terminals 18. Since the metal substrates 11a and 11b are sealed at their peripheries with the first and second molding resins 16 and 17 having high thermal conductivities, the heat radiating characteristic is improved. When the resins are increased in their thickness, the dielectric strength of the semiconductor device is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a power semiconductor device,
The present invention relates to a resin-encapsulated semiconductor device that mounts a control integrated circuit element or the like and handles a large amount of power, and a method for manufacturing the same, and particularly to a small-sized resin-encapsulated semiconductor device with improved heat dissipation characteristics and a method for manufacturing the same.

[0002]

2. Description of the Related Art A typical example of a resin-encapsulated semiconductor device that mounts a power semiconductor element and a control integrated circuit element and handles a large amount of power is an intelligent power module (hereinafter referred to as IPM).
It is called). Most IPMs
A power semiconductor element, a control integrated circuit element, and other electronic parts are mounted on a conductive metal film circuit formed on an insulating film of a metal substrate and housed in a case made of an insulating material. That is, as shown in FIG. 16, the conventional resin-encapsulated semiconductor device has an insulating film 2 provided on a metal substrate 1 for heat dissipation,
A conductive metal film circuit 3 is provided at a desired position on the insulating film 2.
And the power semiconductor element 4 and the control integrated circuit element 5 are mounted thereon, and they are connected by metal thin wires. In addition, in FIG. 16, external terminals 6 to 10 are connected for external connection.

[0003]

In the conventional structure as described above, the heat dissipation characteristic depends on the thickness of the insulating film on the metal substrate, and the thinner the film thickness, the better the heat dissipation characteristic. Will get worse. On the contrary, if the thickness of the insulating film is increased, the insulation characteristic is improved, but the heat dissipation characteristic is deteriorated.

The present invention is intended to improve two characteristics of insulation characteristics and heat dissipation (thermal resistance) characteristics. As a resin-encapsulated semiconductor device, a conventional resin is used by a sealing resin used for integration. This is to obtain an insulating region corresponding to the insulating film on the substrate.

[0005]

The present invention provides a conventional IPM.
It is characterized by structural reform from the viewpoint of heat dissipation and insulation so that the structure for heat dissipation and insulation can be broken down and the package element structure can be applied to the IPM. A plate is punched to form a circuit configuration having each metal substrate region, electronic components such as a power semiconductor element and a control integrated circuit element are mounted, and a first resin portion for fixing each metal substrate region is provided. In addition, the metal plate portion or the tie bar passing through the opening of the resin portion configured as the circuit is cut, a part of the circuit is formed and the electrical test is continuously performed, and then the outer frame of the metal substrate is removed. In this structure, the electrodes are cut to form a circuit structure, and the circuit structure is sealed with a second resin. The first resin and the second resin are made of insulating epoxy resin or polyphenylene sulfide (PPS resin).

Further, the above-mentioned circuit structure body which is a first circuit board and a second circuit board on which electronic parts are mounted are laminated and sealed with a resin.

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION As in the above-described structure, the molding resin material (first resin, second resin) having a large thermal conductivity is also used for forming the insulating portion, so that the heat radiation characteristic is improved ( By lowering the thermal resistance and increasing the thickness of the insulating portion to increase the withstand voltage, it is possible to improve the conventional trade-off relationship between the insulating property and the heat radiation property. That is, insulative epoxy resin or polyphenylene sulfide (PP) suitable for heat dissipation and insulation.
By sealing the surrounding area with (S resin), it is possible to improve the heat dissipation and insulation resistance of the resin-sealed semiconductor device that mounts a power semiconductor element, a control integrated circuit element, etc. and handles a large amount of power. .

A tie bar is cut off from a first resin which has been sealed and fixed between the metal substrates and in the bottom region to form a part of the circuit, and at this time, predetermined electrical characteristics are measured. It is also possible to carry out electrical tests continuously to confirm the initial operating characteristics of the circuit configuration. Also, by punching the metal plate, areas corresponding to the external electrodes (external terminals) are formed on the circuit-configured metal substrate, so that the external electrodes can be formed by subsequent cutting or bending of the metal substrate. You can This also contributes to the reduction of material parts cost and the manufacturing cost.

Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing the configuration of an example of an embodiment of a resin-sealed semiconductor device of the present invention. As shown in FIG. 1, the present embodiment has a package element structure, and the package element structure is an IPM.
The feature which is not existent in the prior art when applied to is described in detail below, and it is explained that it is not merely a structural conversion.

The resin-encapsulated semiconductor device of the present embodiment shown in FIG. 1 is a metal substrate having a circuit structure having a desired metal plate region by punching a copper plate having a thickness of 0.5 mm like lead frame processing. A power semiconductor element 12, a control integrated circuit element 13, and other electronic components 14 are mounted on 11a and 11b. In the figure, the power semiconductor element 12 and an external terminal 18 are connected by a thin metal wire 15. Then, between the metal substrates 11a and 11b and the bottom surface region thereof are sealed and fixed by the first resin 16 having a high thermal conductivity for molding. Further, the first resin 1 on the surfaces and bottom surfaces of the metal substrates 11a and 11b on which the power semiconductor element 12, the control integrated circuit element 13, and other electronic components 14 are mounted.
The end region of 6 has a second resin 17 for molding with high thermal conductivity.
It is sealed with. The external terminal 18 is the metal substrate 11
It is composed of the end of a.

According to the resin-encapsulated semiconductor device of this embodiment, the peripheral regions of the metal substrates 11a and 11b, which are circuit boards formed by punching a metal plate such as a copper plate, are used for molding with high thermal conductivity. Since the first and second resins 16 and 17 are used for sealing, the heat dissipation characteristics can be improved, and the withstand voltage can be improved by increasing the thickness of the resin.

The first resin 16 and the second resin 17
For this, an insulating epoxy resin or polyphenylene sulfide (PPS resin) is preferable in terms of heat dissipation and insulating properties, and any of them can be used in the encapsulation molding step. In addition, resin materials such as liquid crystal polymer and polystyrene can also be used for encapsulation molding. Further, silica (SiC), alumina, magnesia, aluminum nitride and the like are preferable as a filler added to the above resin for improving heat dissipation, and particularly silica and alumina have thermal conductivity, resin It is useful in reducing the thermal stress of.

Further, the metal substrates 11a and 11b have different thicknesses, and the metal substrate 11a also has a thickness of 0.7 mm.
Power semiconductor element 12 is mounted as a metal substrate 11b
By mounting the control integrated circuit element 13 with the thickness of 0.5 mm, the heat dissipation characteristics and the insulation characteristics are further improved.
The resin thickness of the bottom surface regions of the metal substrates 11a and 11b at that time is (0.3 ± 0.08) mm in the first resin 16 below the power semiconductor element 12 and (0.3 ± 0.08) mm in the lower portion of the control integrated circuit element 13. It is 0.5 ± 0.1) mm. The metal substrate 1
As a method of providing a thickness difference between 1a and the metal substrate 11b, there is a method of punching a metal plate and then partially etching or polishing a target portion. Further, it is also possible to provide a thickness difference between the metal substrates 11a and 11b by punching a metal plate having a thickness difference partially provided at a target location.

The metal boards 11a, 1 having a circuit structure having a desired metal plate area by punching a copper plate.
1b is obtained by punching a pre-plated metal plate. Further, the metal substrate 11 has its bottom surface region blackened to improve its adhesion to the first resin 16 for molding. The surface is roughened and roughened.

Next, a method for manufacturing the resin-encapsulated semiconductor device shown in FIG. 1 will be described as an example of the embodiment of the method for manufacturing the resin-encapsulated semiconductor device of the present invention.
2 to 6 are perspective views showing the steps of this embodiment.

First, as shown in FIG. 2, for example, a copper plate having a thickness of 0.5 mm and having a surface plated in advance is punched, and a bottom surface region is roughened to form a circuit on a metal substrate 11 having a thickness of 0.5 mm. Target areas (11
A power semiconductor element 12, a control integrated circuit element 13, and other electronic components 14 are mounted on a, 11b). This mounting is performed using solder, a conductive adhesive, or the like. And
The power semiconductor element 12 is connected to the metal substrate 11a and between the power semiconductor elements 12 by a metal thin wire 15. This connection is performed by a normal wire bonding method.

Next, as shown in FIG. 3, the first resin 16 for molding having high thermal conductivity is used to seal and fix the space between the metal substrates 11 and the bottom surface region. In this step, when the tie bar cut portion 11c of the metal substrate 11 or the outer frame 11d is cut to form a circuit structure in a later step, each metal substrate 11 is cut.
Connect and fix so that a and 11b do not separate. In addition, in the drawing, in order to show the portion of the first resin 16, it is partially hatched. Further, in this step, the bottom surface region of the metal substrate 11 is roughened and roughened by blackening treatment or the like, so that the adhesion with the first resin 16 is improved. Further, when the metal substrates 11 and the bottom surface region are sealed and fixed by the first resin 16, the power semiconductor element 12, the control integrated circuit element 13, and the other electronic components 1 of the metal substrate 11 are sealed.
By sealing and covering the area other than the area on which 4 is mounted, it is possible to prevent the metal substrate 11 from warping due to the deformation stress of the resin and deforming the metal substrate 11.

Next, as shown in FIG. 4, a tie bar is cut to form a tie bar cut portion 11c on the metal resin substrate 11a, 11b sealed and fixed between the metal substrates 11a and 11b and the bottom surface region with the first resin 16. The external terminals 18 are formed, or the metal plate portion passing through the opening in the partial resin region is cut to form a partial circuit. At this point, an electrical test for measuring a predetermined electrical characteristic can be performed to confirm the initial operating characteristic of the circuit configuration. Therefore, if a defective element is found at this point, it can be replaced. In addition, since the outer frame 11d is not cut in terms of electrical characteristics, it is possible to successively and sequentially measure in a frame shape, and inspection efficiency can be improved.

Next, as shown in FIG. 5, the outer frame 11d of the metal substrate 11 is cut to complete the circuit structure, and the external terminal 1 is processed by processing the end portion of the metal substrate 11 after cutting.
8 is formed to form a resin-encapsulated semiconductor device structure 19 (circuit board).

Although the external terminals 18 are formed by processing the end portions of the metal substrate 11, they are formed by punching.
In that case, the outer terminal 18 is rounded by punching the female die with a die having a larger dimension than the male die, by providing a difference in the dimensions of the male die and the female die during punching. You can The dimensional difference between the male mold and the female mold is about 10% to 80% of the thickness of the metal substrate. When the dimensional difference exceeds 80%, the punching process itself cannot be performed, and the punching accuracy also deteriorates. For the roundness of the external terminals 18, the completed resin-encapsulated semiconductor device is used as a mother board (printed circuit board).
In the case of solder joining to, the external terminal 18 can be easily fitted into the hole on the motherboard side, and the mounting efficiency is improved. The punching process for forming the external terminals 18 is not limited to the punching process for the metal substrate 11.
That is, it is better to punch out from the side that is sealed and fixed with the first resin 16 so that the width of the upper surface of the metal substrate 11 is smaller than the width of the lower surface. This is because the metal substrate 11 is punched so that the width of the upper surface of the metal substrate 11 is smaller than that of the lower surface thereof, and the resin sealing of the metal substrate 11 is performed more than when the punching is performed so that the width of the upper surface of the metal substrate 11 is larger than that of the lower surface. It is possible to prevent a decrease in insulation strength and an increase in thermal resistance caused by a local difference in resin thickness in the stop region.

Finally, as shown in FIG. 6, the external terminal 1
A metal on which the outer periphery of the resin-encapsulated semiconductor device structure 19 formed as described above, that is, the power semiconductor element 12, the control integrated circuit element 13, and other electronic components 14 are mounted so as to have a configuration in which 8 is projected. The surface region of the surface of the substrate 11 and the end region of the first resin 16 on the bottom face are sealed with a second resin 17 for molding having a high thermal conductivity. In FIG. 6, the external terminal 18 is configured to project horizontally from the second resin 17 portion, but it may be bent downward or upward depending on the processing. Further, the length of the external terminal 18 can be easily adjusted by forming a large area for the external terminal 18 at the stage of punching the metal substrate 11.

As described in the embodiment shown in FIG. 1, an insulating epoxy resin or polyphenylene sulfide (PPS resin) is suitable for the first resin 16 and the second resin 17, Both can be used in the molding process without any problems. In addition, resin materials such as liquid crystal polymer and polystyrene can also be used for encapsulation molding. Further, silica (SiC), alumina, magnesia, aluminum nitride and the like are preferable as the filler added to the above resin for improving heat dissipation, and silica and alumina are particularly preferable for the thermal conductivity and the heat of the resin. It is useful in reducing stress.

By providing a thickness difference between the metal substrates 11a and 11b, mounting the power semiconductor element 12 with the metal substrate 11a set to 0.7 mm, and mounting the control integrated circuit element 13 with the metal substrate 11b set to 0.5 mm. Further, the heat dissipation characteristics and the insulation characteristics become more preferable. Regarding the resin thickness of the bottom surface regions of the metal substrates 11a and 11b at that time, the first resin 16 under the power semiconductor element 12 is (0.3 ± 0.
08) mm, and the first resin 16 under the control integrated circuit element 13 was (0.5 ± 0.1) mm. As for the method of providing the metal substrates 11a and 11b with a thickness difference, FIG.
This is as described in the embodiment shown in FIG.

In the present embodiment, the respective target regions (11a, 11a) on the metal substrate 11 obtained by punching a metal plate.
b) Power semiconductor device 12 and control integrated circuit device 1 on top
3, an example in which the other electronic components 14 are mounted, the metal thin wires 15 are connected, and then the first resin 16 for molding having high thermal conductivity is used to seal and fix the space between the metal substrates 11 and the bottom surface region. In such a process sequence, as another embodiment, metal substrates 11a, 1 obtained by punching a metal plate are used.
After sealing and fixing the space between 1b and the bottom area, the metal substrate 1
In some cases, the power semiconductor element 12, the control integrated circuit element 13 and other electronic components 14 are mounted on the la and la, and are connected by the thin metal wires 15. In this way, when sealing and fixing the bottom area of the metal substrate before mounting the power semiconductor element 12 or the like, when sealing the metal substrate 11 on which electronic components such as the power semiconductor element 12 are mounted, In comparison, the surface unevenness on the metal substrate 11 is small, so that there is an advantage that the accuracy of sealing can be improved, and electronic components such as the power semiconductor element 12 are not damaged at the time of sealing and fixing. . In addition, the metal substrate 1 in the sealing step
After removing the resin flash of the first resin 16 adhering to 1a and 11b, electronic components such as the power semiconductor element 12 can be mounted.

Next, another example of the embodiment of the resin-sealed semiconductor device of the present invention will be described with reference to FIG.

The resin-encapsulated semiconductor device shown in FIG. 7A is integrated with the resin-encapsulated semiconductor device structure 19 (circuit board) shown in FIG. A circuit board 21 on which electronic components such as a circuit element 20 and a resistance element, a capacitor, etc. are mounted is engaged and laminated through fixing means such as a through hole 22 and a cut corner portion 23 formed in a peripheral end portion thereof. It is a resin-sealed semiconductor device with a two-layer substrate. Then, the gap and the surrounding area of each substrate are sealed with the second resin 17 so that the external terminals 18 are projected. The through holes 22 and the cut corners 23 serving as the fixing means can be formed by punching the circuit board. Note that FIG. 7A is a perspective view so that the internal state can be recognized for convenience. Further, the external terminal 1 to the through hole 22 and the cut corner portion 23 which are the fixing means is provided.
The engagement state of No. 8 is shown in FIGS.

The resin-encapsulated semiconductor device structure 19 is also provided.
As shown in FIGS. 8A to 8D, the external terminal 18 is provided with the cutout portion 18a, the protruding portion 18b, the protruding portion 18c, and the recessed portion 18d.
1 can be easily engaged with the resin-sealed semiconductor device structure 19 to be laminated. Further, the external terminals 18 are provided with engaging holes 18e, 18e as shown in FIGS.
f, 18g are formed and their engaging holes 18e, 18f, 18 are formed.
g of the through hole 2 of the circuit board 21 in which a protrusion or the like is formed.
It is also possible to stack them by engaging the two and the cut corners 23.

In the resin-encapsulated semiconductor device using the two-layer substrate shown in FIG. 7, the resin-encapsulated semiconductor device structure 19 which is the first substrate and the circuit board 21 which is the second substrate.
Here, the wiring 24 formed on the circuit board 21 and the external terminal 18 are electrically connected so that signals can be electrically exchanged.

In the method of manufacturing a resin-sealed semiconductor device using a two-layer substrate as shown in FIG. 7A, the circuit board 21 is laminated on the resin-sealed semiconductor device structure 19. Therefore, the circuit board 21 may act as a lid, and when the gap between the resin-sealed semiconductor device structure 19 and the circuit board 21 and the surrounding area are resin-sealed with the second resin 17, There is a problem that the resin 17 is not sufficiently filled in the gap between the resin-encapsulated semiconductor device structure 19 and the circuit board 21, and voids or spaces are formed. Therefore, a through hole is formed in a portion that does not affect the operation of the circuit board 21,
A through means such as an opening is formed, and a second sealing resin is used.
It is necessary to accelerate the injection of the resin 17 and to seal the resin.

Next, still another example of the embodiment of the resin-sealed semiconductor device of the present invention will be described with reference to FIG.

In FIG. 9, the most different point from the resin-sealed semiconductor device shown in FIG. 7 is that a meandering portion 25 and a protrusion 26 are additionally provided in the tip region of the external terminal 18.

The meandering portion 25 is a means for relieving the stress applied to the external terminal 18 when the resin-encapsulated semiconductor device is soldered to the mother board or the like by the external terminal 18, and its shape is shown in FIG. In addition to the plane S-shape as shown in FIG. 3, the cross-section may be S-shaped or wavy. Regarding the formation of the meandering portion 25, the external terminal 18 is pressed by pressurizing the mold.
To form a wavy portion having an S-shaped cross section, or by rolling, to widen a predetermined portion of the external terminal 18 and form a plane S-shaped meandering portion by notching. It is a thing.

The projecting portion 26 has a different purpose from the projecting portions 18b and 18c of the external terminal 18, and the resin-encapsulated semiconductor device is fixed to the mother board by soldering to the mother board or the like by the outer terminal 18. As shown in FIG. 9, the shape of the engaging means is a key-like protrusion having a sharp tip so that it can be easily fitted into the hole of the motherboard.
Any shape that can be engaged, such as a protrusion with a wide tip, may be used. Further, by uniformly providing the protrusions 26 with respect to the respective external terminals 18, it is possible to adjust the height position at the time of joining the motherboard. The projection 26 is formed by rolling the external terminal 1
The tip end of 8 is widened, and a key-like protrusion is formed by a notch process.

Next, another example of the embodiment of the method for manufacturing the resin-sealed semiconductor device of the present invention will be described with reference to FIGS.
This will be described with reference to FIG.

In the embodiment of the method of the present invention shown in FIGS. 2 to 6, the metal plate is punched to form the respective regions of the desired metal substrates 11a and 11b, and the power semiconductor element 12 and the like are formed. After mounting the first resin 16
Although the example of sealing and fixing the space between the metal substrates 11a and 11b and the bottom surface region has been described above, in the present embodiment, this metal substrate 1 is used.
Another method of attaching the first resin 16 to No. 1 will be described.

First, as shown in FIG. 10, similarly to the embodiment shown in FIGS. 2 to 6, a metal plate such as a copper plate having a thickness of about 0.5 mm is punched to obtain a desired metal substrate 11
Each region such as a and 11b and a region to be the external terminal 18 is formed, and further, a locking means 27 such as a through hole 27a or a cutout 27b is formed in a region of the metal substrate 11 which does not affect the operation.

Then, as shown in FIG. 11, a resin plate 28 having a thickness of 1.0 mm, which is previously formed from the first resin 16 by a molding process, is provided with locking means 27 such as the through hole 27a or the notch 27b. Provided metal substrate 11
To fix the space between the metal substrates 11a and 11b and the bottom surface region. Here, the metal substrate 11 and the resin plate 28 are fitted to each other by fitting the protrusion 28a provided on the resin plate 28 to the locking means 27 such as the through hole 27a or the notch 27b formed in the metal substrate 11. To do.

Thereafter, as shown in FIG. 12, the resin plate 28
The power semiconductor element 12 is mounted on the metal substrates 11a and 11b forming the circuit, as compared with the case where the power semiconductor element 12 is fitted to the metal substrate 11.
Etc. are installed and connected.

Then, a tie bar is cut, the surface region is sealed with the second resin 17, and the external terminals 18 are processed to form a resin-sealed semiconductor device as shown in FIG.

In this method, the first resin 16 is previously prepared.
Since the resin plate 28 is formed by the above method, the thickness of the resin plate 28 can be easily made uniform, the thickness of the resin on the bottom surface of the metal substrate 11 is made uniform, and each region, for example, the metal substrate 11 is made uniform.
It is possible to reduce the unevenness of heat dissipation in the area a.
Further, since the resin plate 28 and the metal substrate 11 are fitted and fixed,
Compared with resin encapsulation, resin flash does not occur, the work is easy, and workability can be improved.

Next, still another example of the embodiment of the resin-sealed semiconductor device of the present invention will be described with reference to FIG. FIG. 14 is a plan view showing this embodiment.

In the structure shown in FIG. 14, a metal board 1 having a circuit structure having a desired metal plate region is formed by punching a copper plate having a thickness of 0.5 mm like a lead frame process.
Power semiconductor element 12, control integrated circuit element 13, and other electronic components 14 are mounted on 1a and 11b,
The power semiconductor element 12 and the external terminal 18 are composed of a thin metal wire 15.
Connected by Further, in the figure, the region surrounded by the broken line is a region which is sealed and fixed by the first resin 16 for molding having high thermal conductivity. Further, in the present embodiment, the first tie bar 29 and the second tie bar 30 are provided between the groups of external terminals 18, and the double tie bars 29, 30 allow the resin burrs at the time of resin sealing in the subsequent process. It is possible to prevent the adhesion of the to the external terminal 18. That is, at the time of resin sealing, the resin that cannot be completely prevented by the first tie bar 29 is stopped by the second tie bar 30, and the flow of the resin to the tip portion of the external terminal 18 is stopped,
The resin can be prevented from adhering to the portion where the external terminal 18 is to be joined to the mother board, thereby preventing the resin flash from adhering.

As in the present embodiment, the double tie bar can prevent the resin flow during resin sealing from flowing to the joint portion of the external terminal 18 and prevent the resin flash from adhering to the mother board. It is possible to prevent the adhesive strength from being deteriorated when soldered to. For reference, the first tie bar 29
The failure rate of solder joints is 0.35% in the case of only, the failure rate of solder joints in the case of only the second tie bar 30 is 0.25%, and the solder joints in the case of providing the first and second tie bars 29, 30 The defect rate was 0.05%, and the solder joint defect rate without the tie bar was 1.45%.

Further, in the resin-sealed semiconductor device of this embodiment, the screw fastening portions 31 are arranged at four places between the groups of external terminals 18. Therefore, even if the structure of the package element using the lead frame is applied to the IPM, the completed resin-encapsulated semiconductor device can be screw-fixed to the heat dissipation plate or the like by the screw fastening portion 31, and the power semiconductor element or the control integrated circuit element can be obtained. Even if a resin-encapsulated semiconductor device that is equipped with the above components and handles a large amount of power is realized, the heat dissipation can be improved. In the present embodiment, the screw fastening portions 31 are provided at four places, but may be provided at two places which are diagonally opposed to each other.

A hook portion 32 is formed inside the screwing portion 31 at a portion sealed with the first resin 16. After the sealing with the first resin 16, the hook portion 32 is removed. By engaging with the first resin 16 and having an anchor effect, it is possible to prevent the screw-fastened portion 31 from coming off due to stress at the time of screw-fastening or the like.

As described above, in the resin-sealed semiconductor device shown in the present embodiment, the metal plate is punched to form a circuit configuration having each metal substrate region, and the power semiconductor element 12 and the control integrated circuit element 13 are formed. The first resin 16 part for mounting the electronic parts such as the above and fixing the respective metal substrate regions is provided, and then the tie bar of the metal substrate 11 having the circuit structure is cut to form the tie bar cut part 11c. The external terminals 18 are formed, or the metal plate portion passing through the opening in the partial resin region is cut to form a partial circuit. After conducting electrical tests continuously, the outer frame 11d is cut to form the external electrodes 18, and then the circuit structure 19 is formed.
Is sealed with the second resin 17, and the first resin 1
6 and the second resin 17 are made of insulating epoxy resin or polyphenylene sulfide (PPS resin), and improve the heat dissipation and insulation resistance of the IPM that handles a large amount of power even when the package structure is formed. Is something that can be done.

[0047]

According to the resin-encapsulated semiconductor device of the present invention, since it is an IPM having a package structure and the peripheral region of the metal plate is encapsulated with a molding resin having a high thermal conductivity, By improving the heat dissipation characteristics and increasing the thickness of the resin, the withstand voltage can be improved. As shown in the thermal resistance / dielectric withstand voltage comparison diagram of FIG. 15, the actual effect is remarkably effective as compared with the conventional example in both of the dielectric strength and thermal resistance characteristics.

Further, in the manufacturing method, the metal substrate region is fixed with the first resin, the tie bar is cut or the metal plate portion of the partial resin region is cut, the circuit is formed, and the metal plate region is fixed with the frame. Electrical tests are successively performed in sequence before the entire surface is sealed with the resin No. 2, various characteristic data can be obtained at the stage of circuit configuration, and inspection efficiency and product reliability are improved.

[Brief description of the drawings]

FIG. 1 is a sectional view of an example of an embodiment of a resin-sealed semiconductor device of the present invention.

FIG. 2 is a process diagram of an example of an embodiment of a method for manufacturing a resin-encapsulated semiconductor device of the present invention.

FIG. 3 is a process chart of an example of an embodiment in a method for manufacturing a resin-encapsulated semiconductor device of the present invention.

FIG. 4 is a process diagram of an example of an embodiment of a method of manufacturing a resin-encapsulated semiconductor device of the present invention.

FIG. 5 is a process chart of an example of an embodiment of a method for manufacturing a resin-encapsulated semiconductor device of the present invention.

FIG. 6 is a process chart of an example of an embodiment in a method of manufacturing a resin-encapsulated semiconductor device of the present invention.

FIG. 7 is a diagram showing another example of the embodiment in the resin-encapsulated semiconductor device of the present invention.

FIG. 8 is a diagram showing a terminal configuration of another example of the embodiment in the resin-sealed semiconductor device of the present invention.

FIG. 9 is a view showing still another example of the embodiment in the resin-sealed semiconductor device of the present invention.

FIG. 10 is a process drawing of another example of the embodiment in the method for manufacturing the resin-sealed semiconductor device of the present invention.

FIG. 11 is a process drawing of another example of the embodiment in the method for manufacturing the resin-sealed semiconductor device of the present invention.

FIG. 12 is a process chart of another example of the embodiment in the method for manufacturing the resin-sealed semiconductor device of the present invention.

FIG. 13 is a process drawing of another example of the embodiment in the method for manufacturing the resin-sealed semiconductor device of the present invention.

FIG. 14 is a plan view of still another example of the embodiment of the resin-encapsulated semiconductor device of the present invention.

FIG. 15 is a diagram showing heat dissipation and withstand voltage of the resin-encapsulated semiconductor device of the present invention.

FIG. 16 is a sectional view showing a conventional resin-sealed semiconductor device.

[Explanation of symbols]

 Reference Signs List 11 metal substrate 12 power semiconductor element 13 control integrated circuit element 14 electronic component 15 metal thin wire 16 first resin 17 second resin 18 external terminal 19 resin-sealed semiconductor device component 20 integrated circuit element 21 circuit board 22 penetration Hole 23 Cutting angle portion 24 Wiring 25 Meandering portion 26 Projection portion 27 Locking means 28 Resin plate 29 First tie bar 30 Second tie bar 31 Screw fixing portion

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Ryutaro Arakawa 1-1 Sachimachi, Takatsuki City, Osaka Prefecture Matsushita Electronics Industrial Co., Ltd. (72) Kazuhiro Aoi 1-1, Sachimachi Takatsuki City, Osaka Matsushita Electronics Industrial Co., Ltd. (72) Inventor Takahiro Kumakawa 1-1 Sachimachi, Takatsuki City, Osaka Prefecture Matsushita Electronics Industrial Co., Ltd. (72) Inventor Makoto Yokozawa 1-1, Sachimachi Takatsuki City, Osaka Matsushita Electronics Industrial Co., Ltd. (72) Inventor Toru Nomura 1-1, Sachimachi, Takatsuki-shi, Osaka Matsushita Denshi Kogyo Co., Ltd. (72) Inventor Tatsuo Maeoka 1006, Kadoma, Kadoma-shi, Osaka Matsushita Electric Industrial Co., Ltd. (72) Invention Person Hiroyuki Handa 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (25)

[Claims] 1. A metal substrate having a circuit formed by processing a metal plate, an electronic component mounted on the metal substrate, a first resin portion fixing a bottom surface region of the metal substrate, and at least the electronic component. A resin-encapsulated semiconductor device comprising: a second resin portion encapsulating a surface area of a metal substrate on which is mounted; and an external electrode provided so as to project from the second resin portion. 2. A metal plate at least a first metal substrate and a second metal substrate having a circuit structure, a power semiconductor element mounted on the first metal substrate, and the second metal substrate. The control integrated circuit element mounted on the above, the first resin portion fixing the bottom surface regions of the first and second metal substrates, and the power semiconductor element and the control integrated circuit element mounted at least A second resin portion sealing the surface regions of the first and second metal substrates;
The resin-encapsulated semiconductor device, which is provided so as to project from the resin portion and has an external electrode connected to the first and second metal substrates. 3. A metal substrate having a circuit formed by processing a metal plate, an electronic component mounted on the metal substrate, a first resin portion fixing a bottom surface region of the metal substrate, and at least the electronic component. A first circuit board including a second resin portion that seals a surface region of the metal substrate on which the substrate is mounted, and an external electrode that is provided so as to project from the second resin portion,
A second circuit board having electronic parts mounted thereon and having fixing means provided at the peripheral end thereof, wherein the external electrodes of the first circuit board are fixed to the fixing means of the second circuit board to form a laminated structure. A resin-encapsulated semiconductor device comprising: a second resin which is formed and seals a gap and an outer peripheral region between the first circuit board and the second circuit board so as to project the external electrode. 4. A at least first metal substrate and a second metal substrate which are circuit-configured by processing a metal plate, a power semiconductor element mounted on the first metal substrate, and the second metal substrate. A control integrated circuit element mounted thereon, a resin portion fixing the bottom surface regions of the first and second metal substrates, and an external electrode that is bent by connecting to the first and second metal substrates. And a second circuit board on which electronic components such as integrated circuit elements, resistance elements, and capacitors are mounted, and fixing means is provided at a peripheral end portion. The external electrode of the first circuit board is fixed to the fixing means to form a laminated structure, and the external electrode is projected in the gap and the surrounding area between the first circuit board and the second circuit board. Sealing with a second resin sealed as Static semiconductor device. 5. The at least first metal substrate and second metal substrate circuit-configured by processing a metal plate, wherein the first metal substrate is thicker than the second metal substrate. The resin-encapsulated semiconductor device described. 6. The resin-encapsulated semiconductor device according to claim 1, wherein the first resin and the second resin are insulating epoxy resins. 7. The first resin and the second resin are insulating polyphenylene sulfides.
A resin-encapsulated semiconductor device according to one of the above. 8. The resin-encapsulated semiconductor device according to claim 3, wherein the fixing means of the second circuit board has a cut-off angle with a through hole provided in the circuit board. 9. The resin-sealed semiconductor device according to claim 3, wherein the external electrode of the first circuit board has a protrusion. 10. A step of processing a metal plate to form a metal substrate circuit, a step of mounting an electronic component on the metal substrate circuit, and a step of electrically connecting the mounted electronic component and the metal plate. A step of sealing and fixing between metal plates and a bottom surface region of the metal substrate circuit with a first resin, and cutting an outer frame of the metal substrate circuit to form a circuit, and an end portion of the metal substrate circuit after cutting And a step of forming an external electrode,
And a step of sealing at least a surface region of the metal substrate circuit on which the electronic component is mounted with a second resin so as to project the external electrode. 11. A step of processing a metal plate to form a metal substrate circuit, a step of sealing and fixing between metal substrates and a bottom surface region of the metal substrate circuit with a first resin, and on the metal substrate circuit. A step of mounting an electronic component, a step of electrically connecting the mounted electronic component and a metal plate, cutting an outer frame of the metal substrate circuit to form a circuit, and an end portion of the metal substrate circuit after the cutting. And a step of forming an external electrode, and a step of sealing at least the surface region of the metal substrate circuit on which the electronic component is mounted with a second resin so as to project the external electrode. Method of manufacturing static semiconductor device. 12. A step of processing a metal plate to form a metal substrate circuit having first and second metal substrate regions, and a power semiconductor element on the first metal substrate region of the metal substrate circuit. A step of mounting a control integrated circuit element on the second metal substrate area, a step of electrically connecting the mounted power semiconductor element, the control integrated circuit element and each metal substrate, A step of sealing and fixing the first and second metal substrate regions and a bottom face region with a first resin to connect and fix the second metal substrate region; and cutting the outer frame of the metal substrate circuit. To form an external electrode by processing an end portion of the metal substrate circuit after cutting, and the power semiconductor element and the control integrated circuit element mounted so as to project the external electrode. 1, second metal substrate area surface and And a step of sealing the end region of the first resin on the bottom surface with a second resin, the method for manufacturing a resin-sealed semiconductor device. 13. A step of processing a metal plate to form a metal substrate circuit having at least first and second metal substrate regions, said first metal substrate region of said metal substrate circuit, and second.
Sealing and fixing between the first and second metal substrate regions and the bottom region for connecting and fixing the metal substrates, and a power semiconductor element on the first metal substrate region, Further, a step of mounting control integrated circuit elements on the second metal substrate area, respectively, the mounted power semiconductor element, the control integrated circuit element, and the first and second
Of electrically connecting the metal substrate regions of, and cutting the outer frame of the metal substrate circuit to form a circuit, and processing the end portion of the metal substrate circuit after cutting to form an external electrode. And the end regions of the first resin on the first and second metal substrate area surfaces and the bottom surface on which the power semiconductor element and the control integrated circuit element are mounted so as to project the external electrodes. And a step of sealing with a second resin. 14. A step of processing a metal plate to form a metal substrate circuit having first and second metal substrate regions, and a power semiconductor element on the first metal substrate region of the metal substrate circuit. And a step of mounting control integrated circuit elements on the second metal substrate area, respectively, and the mounted power semiconductor element, control integrated circuit element, and the first and second power semiconductor elements.
Electrically connecting the second metal substrate, and
A step of sealing and fixing the first and second metal substrate regions and a bottom region with a first resin to connect and fix the second metal substrate region; and a part of the metal substrate region of the metal substrate circuit. And a tie bar are cut to form a part of a circuit, an electrical test is performed, and an outer frame of the metal substrate circuit is cut to form a circuit structure, and an end portion of the cut metal substrate circuit is removed. A step of processing to form an external electrode, and the first and second metal substrate area surfaces and the bottom surface of the first and second metal substrate on which the power semiconductor element and the control integrated circuit element are mounted so as to project the external electrode. And a step of sealing the end region of the resin with a second resin. 15. A step of processing a metal plate to form a metal substrate circuit having first and second metal substrate regions, and a step of connecting and fixing the first and second metal substrate regions. 1, a step of sealing and fixing a region between the second metal substrate regions and the bottom region with a first resin, a power semiconductor element on the first metal substrate region of the metal substrate circuit, and a second metal Mounting a control integrated circuit element on a substrate region, electrically connecting the mounted power semiconductor element, the control integrated circuit element, and the first and second metal substrates, and the metal. A step of cutting a part of the metal board area of the board circuit or the tie bar to form a part of the circuit and performing an electrical test, and cutting the outer frame of the metal board circuit to form a circuit structure and cutting. The end of the metal substrate circuit after is processed and the external electrode And a step of forming the first resin on the first and second metal substrate region surfaces and the bottom surface on which the power semiconductor element and the control integrated circuit element are mounted so as to project the external electrode. And a step of sealing the end region with a second resin. 16. A step of processing a metal plate to form a metal substrate circuit, a step of mounting an electronic component on the metal substrate circuit, and a step of electrically connecting the mounted electronic component and the metal plate. A step of sealing and fixing between metal plates and a bottom surface region of the metal substrate circuit with a first resin, and cutting an outer frame of the metal substrate circuit to form a circuit, and an end portion of the metal substrate circuit after cutting And forming external electrodes to form a first circuit board, and mounting a plurality of electronic components on the circuit board, forming fixing means at a peripheral edge portion, and forming a second circuit board. And a step of engaging external electrodes of the first circuit board with fixing means of the second circuit board to stack and fix the second circuit board on the first circuit board.
And a step of sealing a gap between the first and second circuit boards and a surrounding area with a second resin so as to project the external electrode. 17. A step of processing a metal plate to form a metal substrate circuit; a step of sealing and fixing a space between metal plates and a bottom surface region of the metal substrate circuit with a first resin; A step of mounting an electronic component, a step of electrically connecting the mounted electronic component and a metal plate, cutting an outer frame of the metal substrate circuit to form a circuit, and an end portion of the metal substrate circuit after the cutting. And forming external electrodes to form a first circuit board, and mounting a plurality of electronic components on the circuit board, forming fixing means at a peripheral edge portion, and forming a second circuit board. A step of: engaging the external electrode of the first circuit board with the fixing means of the second circuit board to stack and fix the second circuit board on the first circuit board; The space between the first and second circuit boards and the surrounding area are defined by the external electrodes. And a step of encapsulating with a second resin so as to project the resin. A method of manufacturing a resin-encapsulated semiconductor device. 18. A step of processing a metal plate to form a metal substrate circuit having first and second metal substrate regions, a power semiconductor element on the first metal substrate region, and the second semiconductor substrate region. Mounting a control integrated circuit element on each of the metal substrate areas, and electrically connecting the mounted power semiconductor element, the control integrated circuit element, and the first and second metal substrate areas. A step of sealing and fixing between the first and second metal substrates and a bottom region with a first resin for connecting and fixing the first and second metal substrate regions, and an outer frame of the metal substrate circuit. A step of cutting the frame to form a circuit, bending the end portion of the cut metal substrate circuit to form an external electrode to form a first circuit board, and an integrated circuit element and a resistance element on the circuit board. , Electronic components such as capacitors A step of forming a through hole and a fixing means of a cut corner at an end to form a second circuit board; and a step of forming the external electrode of the first circuit board by the through means which is a fixing means of the second circuit board. A step of engaging the holes and the cut corners and stacking and fixing the second circuit board on the first circuit board; and a gap and a surrounding area between the first and second circuit boards for the external electrode. And a step of encapsulating with a second resin so as to project the resin. A method of manufacturing a resin-encapsulated semiconductor device. 19. A step of processing a metal plate to form a metal substrate circuit having first and second metal substrate regions, and a step of connecting and fixing the first and second metal substrate regions. 1, a step of sealing and fixing the space between the second metal substrate and the bottom surface region with the first resin, a power semiconductor element on the first metal substrate region, and a control on the second metal substrate region. Mounting each integrated circuit element, and electrically connecting the mounted power semiconductor element, the control integrated circuit element, and the first and second metal substrate regions,
A step of cutting the outer frame of the metal substrate circuit to form a circuit, bending an end portion of the cut metal substrate circuit to form external electrodes, and forming a first circuit board; A step of mounting an electronic component such as an integrated circuit element, a resistance element, a capacitor, etc. on a peripheral edge portion, forming a through hole and a fixing means for a cutting angle to form a second circuit board; and the first circuit board. Engaging the external electrode with the through hole and the cut corner that are fixing means of the second circuit board, and stacking and fixing the second circuit board on the first circuit board; 1. A method of manufacturing a resin-encapsulated semiconductor device, which comprises a step of encapsulating a gap between a second circuit board and an outer peripheral area with a second resin so that the external electrodes protrude. 20. A step of processing a metal plate to form a metal substrate circuit having first and second metal substrate regions, a power semiconductor element on the first metal substrate region, and the second semiconductor substrate region. A step of mounting a control integrated circuit element on the metal substrate region, and a step of electrically connecting the mounted power semiconductor element, the control integrated circuit element and the first and second metal substrates, A step of sealing and fixing the first and second metal substrate regions between the first and second metal substrate regions and a bottom region with a first resin in order to connect and fix the first and second metal substrate regions; A step of cutting a part or a tie bar to form a part of the circuit and performing an electrical test, and cutting the outer frame of the metal board circuit to form a circuit, and cutting the end part of the metal board circuit after cutting. The first circuit board is formed by bending and forming external electrodes. The process of forming and mounting electronic components such as integrated circuit elements, resistance elements, capacitors on the circuit board, and forming the through holes and the fixing means for the cut corners at the peripheral edge,
Forming a second circuit board, and engaging the external electrodes of the first circuit board with the through holes and the cut corners that are fixing means of the second circuit board to form the first circuit. Stacking and fixing the second circuit board on the board; and sealing the gap and the surrounding area between the first and second circuit boards with a second resin so that the external electrodes protrude. A method of manufacturing a resin-encapsulated semiconductor device, comprising: 21. A step of processing a metal plate to form a metal substrate circuit having first and second metal substrate regions, and the step of connecting and fixing the first and second metal substrate regions. 1. A step of sealing and fixing between the second metal substrate region and the bottom region with a first resin, and controlling a power semiconductor element on the first metal substrate region and on the second metal substrate region. Mounting respective integrated circuit elements for use, and electrically connecting the mounted power semiconductor element, the controlling integrated circuit element, and the first and second metal substrates,
Forming a circuit by cutting a part of the metal substrate or the tie bar of the metal substrate circuit, performing an electrical test, and cutting the outer frame of the metal substrate circuit to form a circuit,
A step of bending the end portion of the metal substrate circuit after cutting to form an external electrode to form a first circuit board, and mounting an electronic component such as an integrated circuit element, a resistance element, or a capacitor on the circuit board, A step of forming a through hole and a fixing means of a cut corner at a peripheral end portion to form a second circuit board; and a step of fixing the external electrode of the first circuit board to the second circuit board. A step of engaging the through hole and the corner and stacking and fixing the second circuit board on the first circuit board; and a gap between the first and second circuit board areas and a surrounding area. And a step of sealing with a second resin so as to project the external electrode. 22. The method for manufacturing a resin-encapsulated semiconductor device according to claim 10, wherein the first resin and the second resin are insulating epoxy resins. 23. The method of manufacturing a resin-encapsulated semiconductor device according to claim 10, wherein the first resin and the second resin are insulating polyphenylene sulfides. 24. A metal plate is processed to form a target metal substrate region and a region to be an external terminal, and a locking means such as a through hole or a notch is provided in a region of the metal substrate region which does not affect operation. Forming step and fitting a resin plate previously formed of the first resin by molding into a metal substrate provided with locking means such as the through hole or notch, and fixing the resin between the metal substrate regions and the bottom region. And the resin plate fitted to the metal substrate,
It has a step of mounting a power semiconductor element and a control element in the metal substrate area and connecting them, a step of sealing the surface area with a second resin, and a step of processing an external terminal. Method for manufacturing resin-sealed semiconductor device. 25. A metal plate is processed to form a target metal substrate region and a region to be an external terminal, and further a first tie bar and a second tie bar are formed between the external terminal groups to form a metal substrate region. A step of preparing a circuit-configured metal substrate having the step of mounting a power semiconductor element, a control integrated circuit element, and other electronic components on the circuit-configured metal substrate having the metal substrate region. And a step of connecting the power semiconductor element, the control integrated circuit element and other electronic parts to an external terminal with a thin metal wire, and a mounting area of the power semiconductor element, the control integrated circuit element and the other electronic parts with a resin. A method of manufacturing a resin-encapsulated semiconductor device, comprising: a step of encapsulating with a first tie bar and a second tie bar between the external terminal groups in the resin encapsulation step. By forming the tie bar of
At the time of resin sealing, the resin that could not be prevented by the first tie bar is stopped by the second tie bar to stop the resin from flowing to the tip part of the external terminal, and the resin to the part where the external terminal is joined to the mother board. The method for manufacturing a resin-encapsulated semiconductor device, characterized in that the resin encapsulation is performed by stopping the outflow of the resin and preventing the resin flash from adhering.