JPH08335651A - Substrate for power module - Google Patents
Substrate for power moduleInfo
- Publication number
- JPH08335651A JPH08335651A JP7142286A JP14228695A JPH08335651A JP H08335651 A JPH08335651 A JP H08335651A JP 7142286 A JP7142286 A JP 7142286A JP 14228695 A JP14228695 A JP 14228695A JP H08335651 A JPH08335651 A JP H08335651A
- Authority
- JP
- Japan
- Prior art keywords
- brazing material
- heat sink
- ceramic substrate
- power module
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は大電力半導体が発生する
熱を放散するためのヒートシンクを有するパワーモジュ
ール用基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power module substrate having a heat sink for dissipating heat generated by a high power semiconductor.
【０００２】[0002]
【従来の技術】従来、この種のパワーモジュール用基板
として、Ｎｉめっきを施したＣｕやＡｌにより形成され
た大型のヒートシンクをＳｎ−Ｐｂ系、Ｐｂ−Ｉｎ系、
Ａｇ−Ｓｎ系等のはんだを用いてセラミック基板の裏面
に金属薄板を介して積層接着する方法が知られている。
しかし、上記はんだを用いた積層接着方法では、はんだ
層の熱抵抗が大きいため、セラミック基板とヒートシン
クを直接積層接着する方法が提案されている。この直接
積層接着する方法としては、セラミック基板及びヒート
シンクをＡｌ2Ｏ3及びＣｕによりそれぞれ形成した場
合、セラミック基板とヒートシンクとを重ねた状態でこ
れらに荷重０．５〜２ｋｇｆ／ｃｍ2を加え、Ｎ2雰囲気
中で１０６５℃に加熱するいわゆるＤＢＣ法（Direct B
onding Copper 法）、又はセラミック基板とヒートシン
クとの間にＡｇ−Ｃｕ−Ｔｉろう材の箔を挟んだ状態で
これらに荷重０．５〜２ｋｇｆ／ｃｍ2を加え、真空中
で８００〜９００℃に加熱するいわゆる活性金属法があ
る。しかし、上記直接積層接着する方法では、セラミッ
ク基板とヒートシンクとの熱膨張係数が異なるため、パ
ワーモジュール基板に反りを生じたり、熱サイクルによ
りセラミック基板に割れを生じたりする問題点があっ
た。これらの点を解消するために、ヒートシンクのセラ
ミック基板との接着面に格子状の溝を形成してヒートシ
ンクをセラミック基板に積層接着する方法が知られてい
る。2. Description of the Related Art Conventionally, as a power module substrate of this type, a large heat sink made of Ni-plated Cu or Al is used as a Sn-Pb-based, Pb-In-based heat sink.
A method of laminating and bonding to the back surface of a ceramic substrate via a thin metal plate using a solder such as Ag—Sn system is known.
However, in the above-mentioned laminated bonding method using solder, a method of directly laminating and bonding the ceramic substrate and the heat sink has been proposed because the thermal resistance of the solder layer is large. As a method of directly laminating and bonding, when the ceramic substrate and the heat sink are formed of Al 2 O 3 and Cu, respectively, a load of 0.5 to 2 kgf / cm 2 is applied to the ceramic substrate and the heat sink in a stacked state, The so-called DBC method (Direct B method of heating to 1065 ° C. in an N 2 atmosphere)
onding copper method) or a state in which a foil of Ag-Cu-Ti brazing material is sandwiched between a ceramic substrate and a heat sink, and a load of 0.5 to 2 kgf / cm 2 is applied to these, and the temperature is set to 800 to 900 ° C in vacuum. There is a so-called active metal method of heating. However, in the method of directly laminating and bonding, the ceramic substrate and the heat sink have different thermal expansion coefficients, so that there is a problem in that the power module substrate is warped or the ceramic substrate is cracked due to a thermal cycle. In order to solve these problems, a method is known in which lattice-shaped grooves are formed on the surface of the heat sink that is bonded to the ceramic substrate and the heat sink is laminated and bonded to the ceramic substrate.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上記従来の溝
を有するヒートシンクを積層接着する方法では、溝の形
成により接着時に反りは多少防ぐことはできるが、セラ
ミック基板が大型化すると上記溝だけでは反りを防止す
ることができない不具合があり、また熱サイクル時に積
層接着部でセラミック基板の割れを防ぐことは難しかっ
た。これらの点を解消するために溝を多くすると接着面
積が減少して、熱抵抗の上昇となる問題点がある。本発
明の目的は、放熱特性を損なわずに、熱変形を吸収して
セラミック基板の反りや割れを防止できるパワーモジュ
ール用基板を提供することにある。However, in the conventional method of laminating and bonding a heat sink having a groove as described above, it is possible to prevent warpage at the time of bonding by forming a groove, but when the ceramic substrate becomes large, the above-mentioned groove alone is used. There is a problem that the warp cannot be prevented, and it is difficult to prevent the ceramic substrate from cracking at the laminated bonding portion during the thermal cycle. If the number of grooves is increased in order to eliminate these points, there is a problem that the adhesive area is reduced and the thermal resistance is increased. An object of the present invention is to provide a power module substrate capable of absorbing thermal deformation and preventing warpage or cracking of a ceramic substrate without impairing heat dissipation characteristics.
【０００４】[0004]
【課題を解決するための手段】上記目的を達成するため
の本発明の構成を、実施例に対応する図１及び図３を用
いて説明する。本発明のパワーモジュール用基板は、図
１又は図３に示すようにセラミック基板１３に直接又は
第１ろう材５１を介して積層接着された金属薄板１４
と、金属薄板１４に第２ろう材１２と可塑性多孔質金属
層１７と第２ろう材１２とを介して積層接着されセラミ
ック基板１３と異なる熱膨張係数を有するヒートシンク
１８とを備えたものである。The structure of the present invention for achieving the above object will be described with reference to FIGS. 1 and 3 corresponding to the embodiments. As shown in FIG. 1 or 3, the power module substrate of the present invention is a thin metal plate 14 laminated and adhered to a ceramic substrate 13 directly or through a first brazing material 51.
And a heat sink 18 having a thermal expansion coefficient different from that of the ceramic substrate 13 laminated and adhered to the thin metal plate 14 via the second brazing material 12, the plastic porous metal layer 17, and the second brazing material 12. .
【０００５】以下、本発明を詳述する。 (a)金属薄板のセラミック基板への積層接着 金属薄板はＣｕ又はＡｌにより形成され、セラミック基
板はＡｌ2Ｏ3又はＡｌＮにより形成される。金属薄板が
Ｃｕにより形成され、セラミック基板がＡｌ2Ｏ3により
形成される場合には、セラミック基板と金属薄板とを重
ねた状態でこれらに荷重０．５〜２ｋｇｆ／ｃｍ2を加
え、Ｎ2雰囲気中で１０６５〜１０７５℃に加熱するＤ
ＢＣ法、又はセラミック基板と金属薄板との間に第１ろ
う材であるＡｇ−Ｃｕ−Ｔｉろう材の箔を挟んだ状態で
これらに荷重０．５〜２ｋｇｆ／ｃｍ2を加え、真空中
で８００〜９００℃に加熱する活性金属法により、金属
薄板がセラミック基板に積層接着される。The present invention will be described in detail below. (a) Lamination adhesion of metal thin plate to ceramic substrate The metal thin plate is made of Cu or Al, and the ceramic substrate is made of Al 2 O 3 or AlN. When the metal thin plate is made of Cu and the ceramic substrate is made of Al 2 O 3 , a load of 0.5 to 2 kgf / cm 2 is applied to the ceramic substrate and the metal thin plate in a stacked state, and N 2 D heated to 1065 to 1075 ° C in the atmosphere
A load of 0.5 to 2 kgf / cm 2 is applied to these by the BC method or with a foil of Ag-Cu-Ti brazing filler metal, which is the first brazing filler metal, sandwiched between the ceramic substrate and the thin metal plate, and in a vacuum. A thin metal plate is laminated and adhered to the ceramic substrate by the active metal method of heating at 800 to 900 ° C.
【０００６】また金属薄板がＣｕにより形成され、セラ
ミック基板がＡｌＮにより形成される場合には、予めセ
ラミック基板を１０００〜１４００℃で酸化処理してそ
の表面にＡｌ2Ｏ3層を最適な厚さで形成した後、上記と
同様のＤＢＣ法又は活性金属法によりセラミック基板に
金属薄板が積層接着される。更に金属薄板がＡｌにより
形成され、セラミック基板がＡｌ2Ｏ3又はＡｌＮにより
形成される場合には、セラミック基板と金属薄板との間
に第１ろう材であるＡｌ−Ｓｉろう材の箔を挟んだ状態
でこれらに荷重０．５〜２ｋｇｆ／ｃｍ2を加え、真空
中で６００〜６５０℃に加熱することにより、金属薄板
がセラミック基板に積層接着される。When the thin metal plate is made of Cu and the ceramic substrate is made of AlN, the ceramic substrate is previously subjected to an oxidation treatment at 1000 to 1400 ° C. and an Al 2 O 3 layer having an optimum thickness is formed on the surface thereof. Then, the thin metal plates are laminated and adhered to the ceramic substrate by the DBC method or the active metal method similar to the above. Further, when the metal thin plate is made of Al and the ceramic substrate is made of Al 2 O 3 or AlN, a foil of Al-Si brazing material as the first brazing material is sandwiched between the ceramic substrate and the metal thin plate. In such a state, a load of 0.5 to 2 kgf / cm 2 is applied to these and heated to 600 to 650 ° C. in a vacuum, whereby the thin metal plates are laminated and bonded to the ceramic substrate.
【０００７】(b)可塑性多孔質金属層 可塑性多孔質金属層は下記の方法により製造される。先
ず平均粒径５〜１００μｍの金属粉と、水溶性樹脂バイ
ンダと、非水溶性炭化水素系有機溶剤と、界面活性剤
と、水とを混練した後、可塑剤を添加して更に混練して
得られた金属粉含有スラリーをドクタブレード法により
成形体にする。次いでこの成形体を５〜１００℃で０．
２５〜４時間保持して上記成形体中の可塑剤を揮発させ
発泡させた後、５０〜２００℃で０．５〜１時間保持し
乾燥して薄板状多孔質成形体にする。次にこの多孔質成
形体を所定の雰囲気中で５００〜１０６０℃で０．５〜
４時間加熱して保持し、スケルトン構造を有する気孔率
９０〜９３％、厚さ０．５〜５ｍｍの薄板状多孔質焼結
体にする。更にこの多孔質焼結体を厚さ０．２〜３ｍｍ
に圧延することにより、気孔率が２０〜５０％の可塑性
多孔質金属層が得られる。(B) Plastic Porous Metal Layer The plastic porous metal layer is produced by the following method. First, a metal powder having an average particle size of 5 to 100 μm, a water-soluble resin binder, a water-insoluble hydrocarbon organic solvent, a surfactant and water are kneaded, and then a plasticizer is added and further kneaded. The obtained metal powder-containing slurry is formed into a compact by the doctor blade method. Then, this molded body was subjected to 0.
After holding for 25 to 4 hours to volatilize the plasticizer in the above-mentioned molded article to foam, it is kept at 50 to 200 ° C for 0.5 to 1 hour and dried to obtain a thin plate-like porous molded article. Next, the porous molded body is subjected to 0.5 to 0.5 at 500 to 1060 ° C. in a predetermined atmosphere.
It is heated and held for 4 hours to obtain a thin plate-like porous sintered body having a skeleton structure and a porosity of 90 to 93% and a thickness of 0.5 to 5 mm. Furthermore, this porous sintered body has a thickness of 0.2 to 3 mm.
Rolling to give a plastic porous metal layer having a porosity of 20 to 50%.
【０００８】Ｃｕの可塑性多孔質金属層では金属粉とし
て平均粒径５〜１００μｍのＣｕ粉が用いられ、Ａｌの
可塑性多孔質金属層では金属粉として平均粒径５〜１０
０μｍのＡｌ粉と平均粒径５〜１００μｍのＣｕ粉の混
合物が用いられ、Ａｇの可塑性多孔質金属層では金属粉
として平均粒径５〜１００μｍのＡｇ粉が用いられる。
水溶性樹脂バインダとしてはメチルセルロース、ヒドロ
キシプロピルメチルセルロース、ヒドロキシエチルメチ
ルセルロース、カルボキシメチルセルロースアンモニウ
ム、エチルセルロース等が用いられ、非水溶性炭化水素
系有機溶剤としてはネオペンタン、ヘキサン、イソヘキ
サン、ヘプタン等が用いられる。また界面活性剤として
は市販の台所用中性合成洗剤（例えばアルキルグルコシ
ドとポリオキシエチレンアルキルエーテルの２８％混合
水溶液）が用いられ、可塑剤としてはエチレングリコー
ル、ポリエチレングリコール、グリセリン等の多価アル
コールや、イワシ油、菜種油、オリーブ油等の油脂や、
石油エーテル等のエーテルや、フタル酸ジエチル、フタ
ル酸ジＮブチル、フタル酸ジエチルヘキシル、フタル酸
ジＮオクチル等のエステルが用いられる。In the plastic porous metal layer of Cu, Cu powder having an average particle size of 5 to 100 μm is used as the metal powder, and in the plastic porous metal layer of Al, the average particle size of 5 to 10 as the metal powder.
A mixture of 0 μm Al powder and Cu powder having an average particle size of 5 to 100 μm is used, and Ag plastic powder having an average particle size of 5 to 100 μm is used as the metal powder in the Ag plastic porous metal layer.
Methylcellulose, hydroxypropylmethylcellulose, hydroxyethylmethylcellulose, carboxymethylcellulose ammonium, ethylcellulose and the like are used as the water-soluble resin binder, and neopentane, hexane, isohexane, heptane and the like are used as the water-insoluble hydrocarbon organic solvent. A commercially available kitchen neutral synthetic detergent (for example, a 28% mixed aqueous solution of alkyl glucoside and polyoxyethylene alkyl ether) is used as the surfactant, and a polyhydric alcohol such as ethylene glycol, polyethylene glycol or glycerin is used as the plasticizer. And oils and fats such as sardine oil, rapeseed oil and olive oil,
Ethers such as petroleum ether and esters such as diethyl phthalate, diN-butyl phthalate, diethylhexyl phthalate and diN-octyl phthalate are used.
【０００９】(c)ヒートシンク ヒートシンクはＣｕ若しくはＡｌの押出し成形や射出成
形等により、又はＣｕ板若しくはＡｌ板のプレス成形に
より形成される。ヒートシンクは第２ろう材を介して可
塑性多孔質金属層に積層接着される基部と、この基部に
所定の間隔をあけて突設された多数のフィン部とを有す
る。基部及びフィン部はＣｕ又はＡｌにより一体的に成
形される。またヒートシンクとして、フィン部のない基
部のみにより形成されたプレート状のものを用いること
もできる。(C) Heat Sink The heat sink is formed by extrusion molding or injection molding of Cu or Al, or by press molding of Cu plate or Al plate. The heat sink has a base portion laminated and adhered to the plastic porous metal layer via the second brazing material, and a large number of fin portions protruding from the base portion at predetermined intervals. The base portion and the fin portion are integrally formed of Cu or Al. Further, as the heat sink, it is also possible to use a plate-like one formed by only the base portion having no fin portion.
【００１０】(d)第２ろう材 金属薄板及びヒートシンクがＣｕにより形成され、かつ
可塑性多孔質金属層がＣｕ又はＡｇにより形成されたと
き、第２ろう材としてＡｇ−Ｃｕろう材の箔が用いら
れ、金属薄板、可塑性多孔質金属層及びヒートシンクの
少なくともいずれか１つがＡｌにより形成されたとき、
第２ろう材としてＡｌ−Ｓｉろう材の箔が用いられる。(D) Second brazing material When the thin metal plate and the heat sink are made of Cu and the plastic porous metal layer is made of Cu or Ag, a foil of Ag-Cu brazing material is used as the second brazing material. When at least one of the thin metal plate, the plastic porous metal layer and the heat sink is formed of Al,
A foil of Al-Si brazing material is used as the second brazing material.
【００１１】(e)ヒートシンク及び可塑性多孔質金属層
の金属薄板への積層接着 第２ろう材としてＡｇ−Ｃｕろう材の箔を用いる場合に
は、セラミック基板に積層接着された金属薄板に第２ろ
う材、可塑性多孔質金属層、第２ろう材及びヒートシン
クを重ねた状態でこれらに荷重０．１〜１．０ｋｇｆ／
ｃｍ2を加え、水素雰囲気中で８００〜８５０℃に加熱
することにより、ヒートシンクが第２ろう材、可塑性多
孔質金属層及び第２ろう材を介して金属薄板に積層接着
される。また第２ろう材としてＡｌ−Ｓｉろう材の箔を
用いる場合には、セラミック基板に積層接着された金属
薄板に第２ろう材、可塑性多孔質金属層、第２ろう材及
びヒートシンクを重ねた状態でこれらに荷重０．１〜
１．０ｋｇｆ／ｃｍ2を加え、真空中で５５０〜６３０
℃に加熱することにより、ヒートシンクが第２ろう材、
可塑性多孔質金属層及び第２ろう材を介して金属薄板に
積層接着される。また可塑性多孔質金属層に形成された
気孔には積層接着後の金属層の側面からシリコーングリ
ース、シリコーンオイル又はエポキシ樹脂を充填するこ
とが好ましい。(E) Laminating and Bonding Heat Sink and Plastic Porous Metal Layer to Metal Thin Plate When Ag-Cu brazing material foil is used as the second brazing material, the second bonding is applied to the metal thin plate laminated and bonded to the ceramic substrate. When the brazing material, the plastic porous metal layer, the second brazing material and the heat sink are stacked, a load of 0.1 to 1.0 kgf /
By adding cm 2 and heating to 800 to 850 ° C. in a hydrogen atmosphere, the heat sink is laminated and bonded to the metal thin plate through the second brazing filler metal, the plastic porous metal layer and the second brazing filler metal. When an Al-Si brazing material foil is used as the second brazing material, the second brazing material, the plastic porous metal layer, the second brazing material and the heat sink are stacked on the thin metal plate laminated and bonded to the ceramic substrate. Then load 0.1 to these
1.0kgf / cm 2 was added, and 550 to 630 in vacuum.
By heating to ℃, the heat sink becomes the second brazing material,
It is laminated and adhered to a metal thin plate through the plastic porous metal layer and the second brazing material. The pores formed in the plastic porous metal layer are preferably filled with silicone grease, silicone oil, or epoxy resin from the side surface of the metal layer after lamination and adhesion.
【００１２】[0012]
【作用】図１又は図３に示されるパワーモジュール用基
板１０又は５０では、セラミック基板１３とヒートシン
ク１８との熱膨張係数が異なっても、可塑性多孔質金属
層１７がセラミック基板１３やヒートシンク１８の熱変
形を吸収するので、セラミック基板１３に反りや割れが
発生するのを防止できる。また可塑性多孔質金属層１７
にシリコーングリース、シリコーンオイル又はエポキシ
樹脂を充填することにより、可塑性多孔質金属層１７で
の熱伝導率が向上するので、放熱特性を損わない。In the power module substrate 10 or 50 shown in FIG. 1 or 3, even if the ceramic substrate 13 and the heat sink 18 have different coefficients of thermal expansion, the plastic porous metal layer 17 is used as the ceramic substrate 13 or the heat sink 18. Since the thermal deformation is absorbed, it is possible to prevent the ceramic substrate 13 from being warped or cracked. In addition, the plastic porous metal layer 17
By filling with silicone grease, silicone oil, or epoxy resin, the thermal conductivity of the plastic porous metal layer 17 is improved, so that the heat dissipation characteristics are not impaired.
【００１３】[0013]
【実施例】次に本発明の実施例を図面に基づいて詳しく
説明する。 ＜実施例１＞図１に示すように、パワーモジュール用基
板１０はセラミック基板１３の下面及び上面にそれぞれ
直接積層接着された金属薄板１４及び回路基板１６と、
金属薄板１４に第２ろう材１２と可塑性多孔質金属層１
７と第２ろう材１２とを介して積層接着されセラミック
基板１３と異なる熱膨張係数を有するヒートシンク１８
とを備える。セラミック基板１３をＡｌ2Ｏ3含有量が９
６％のセラミック材料により縦、横及び厚さがそれぞれ
３０ｍｍ、７０ｍｍ及び０．６３５ｍｍの長方形の薄板
状に形成し、金属薄板１４及び回路基板１６をＣｕによ
り縦、横及び厚さがそれぞれ３０ｍｍ、７０ｍｍ及び
０．３ｍｍの長方形の薄板状に形成した。金属薄板１４
及び回路基板１６をＤＢＣ法によりセラミック基板１３
の下面及び上面にそれぞれ積層接着した。即ちセラミッ
ク基板１３の下面及び上面に金属薄板１４及び回路基板
１６をそれぞれ重ねた状態でこれらに荷重２．０ｋｇｆ
／ｃｍ2を加え、Ｎ2雰囲気中で１０６５℃に加熱するこ
とにより積層接着した。セラミック基板１３の上面に積
層接着された回路基板１６をＦｅＣｌ3水溶液でエッチ
ングして所定の形状の回路基板にした。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described in detail with reference to the drawings. <Embodiment 1> As shown in FIG. 1, a power module substrate 10 includes a metal thin plate 14 and a circuit substrate 16 which are directly laminated and adhered to a lower surface and an upper surface of a ceramic substrate 13, respectively.
The second brazing material 12 and the plastic porous metal layer 1 on the thin metal plate 14.
7 and the second brazing filler metal 12 are laminated and adhered to each other and have a thermal expansion coefficient different from that of the ceramic substrate 13.
With. The ceramic substrate 13 has an Al 2 O 3 content of 9
A 6% ceramic material is formed into a rectangular thin plate having a length, width, and thickness of 30 mm, 70 mm, and 0.635 mm, respectively, and the metal thin plate 14 and the circuit board 16 are made of Cu, and each of length, width, and thickness is 30 mm. It was formed in a rectangular thin plate shape of 70 mm and 0.3 mm. Metal sheet 14
And the circuit board 16 by the DBC method.
Was laminated and adhered to the lower surface and the upper surface, respectively. That is, the metal thin plate 14 and the circuit board 16 are stacked on the lower surface and the upper surface of the ceramic substrate 13, respectively, and a load of 2.0 kgf is applied to them.
/ Cm 2 was added and the layers were bonded by heating at 1065 ° C. in an N 2 atmosphere. The circuit board 16 laminated and adhered on the upper surface of the ceramic substrate 13 was etched with a FeCl 3 aqueous solution to form a circuit board having a predetermined shape.
【００１４】可塑性多孔質金属層１７は気孔率３０％の
Ｃｕの多孔質焼結体である。この可塑性多孔質金属層１
７を以下の方法により製造した。先ず平均粒径４０μｍ
のＣｕ粉８０ｇと、水溶性メチルセルロース樹脂バイン
ダ２．５ｇと、グリセリン５ｇと、界面活性剤０．５ｇ
と、水２０ｇとを３０分間混練した後、ヘキサンを１ｇ
添加して更に３分間混練して得られた金属粉含有スラリ
ーをドクタブレード法により成形体にした。次いで上記
成形体を温度４０℃に３０分間保持して上記成形体中の
ヘキサンを揮発させて発泡させた後、温度９０℃に４０
分間保持し乾燥して薄板状多孔質成形体にした。次にこ
の多孔質成形体を空気中で５００℃に０．５時間加熱し
て保持した後、水素中で１０００℃に１時間加熱して保
持し、スケルトン構造を有する気孔率９２〜９５％、厚
さ３ｍｍの薄板状多孔質焼結体にした。更にこの多孔質
焼結体を厚さ１ｍｍに圧延して気孔率３０％の可塑性多
孔質金属層１７を得た。また上記可塑性多孔質金属層１
７を縦及び横が３０ｍｍ及び７０ｍｍの長方形状に切断
した。The plastic porous metal layer 17 is a Cu porous sintered body having a porosity of 30%. This plastic porous metal layer 1
7 was manufactured by the following method. First, the average particle size is 40 μm
Cu powder 80g, water-soluble methylcellulose resin binder 2.5g, glycerin 5g, and surfactant 0.5g
And 20 g of water are kneaded for 30 minutes, and then 1 g of hexane
The metal powder-containing slurry obtained by adding and kneading for 3 minutes was formed into a molded body by the doctor blade method. Next, the molded body is kept at a temperature of 40 ° C. for 30 minutes to evaporate hexane in the molded body to foam, and then the temperature is kept at 90 ° C. for 40 minutes.
It was kept for a minute and dried to obtain a thin plate-like porous molded body. Next, this porous molded body was heated in air at 500 ° C. for 0.5 hours and held, and then heated in hydrogen at 1000 ° C. for 1 hour and held to have a skeleton structure and a porosity of 92 to 95%. A thin plate-shaped porous sintered body having a thickness of 3 mm was prepared. Further, this porous sintered body was rolled to a thickness of 1 mm to obtain a plastic porous metal layer 17 having a porosity of 30%. In addition, the plastic porous metal layer 1
7 was cut into a rectangular shape having a length of 30 mm and a width of 70 mm.
【００１５】ヒートシンク１８をＣｕの押出し成形によ
り形成し、第２ろう材１２としてＡｇ−Ｃｕろう材の箔
を用いた。ヒートシンク１８は第２ろう材１２を介して
可塑性多孔質金属層１７に積層接着される縦、横及び厚
さがそれぞれ３０ｍｍ、７０ｍｍ及び１ｍｍの直方体状
の基部１８ａと、この基部１８ａの下面に所定の間隔を
あけて突設された多数のフィン部１８ｂとを有し、上記
基部１８ａの積層接着面には幅が１ｍｍで間隔が１０ｍ
ｍの格子状の溝１８ｃを形成した。またヒートシンク１
８の自然空冷時での放熱特性は５℃／Ｗであった。セラ
ミック基板１３の下面に積層接着された金属薄板１４の
下面に第２ろう材１２、可塑性多孔質金属層１７、第２
ろう材１２及びヒートシンク１８を重ねた状態でこれら
に荷重０．２ｋｇｆ／ｃｍ2を加え、水素雰囲気中で８
００℃に加熱することにより、ヒートシンク１８を第２
ろう材１２、可塑性多孔質金属層１７及び第２ろう材１
２を介して金属薄板１４の下面に積層接着した。可塑性
多孔質金属層１７の気孔にはこの金属層１７の側面から
シリコーングリースを充填した。このようにしてパワー
モジュール用基板１０を得た。The heat sink 18 was formed by extrusion molding of Cu, and Ag-Cu brazing material foil was used as the second brazing material 12. The heat sink 18 is laminated and adhered to the plastic porous metal layer 17 via the second brazing filler metal 12, and has a rectangular parallelepiped base portion 18a having a length, width, and thickness of 30 mm, 70 mm, and 1 mm, respectively, and a predetermined lower surface of the base portion 18a. And a large number of fin portions 18b projecting at intervals, the width of the base portion 18a is 1 mm and the distance between them is 10 m.
m grid-shaped grooves 18c were formed. Also heat sink 1
The heat radiation property of the sample No. 8 in natural air cooling was 5 ° C./W. The second brazing filler metal 12, the plastic porous metal layer 17, and the second metal layer 17 are formed on the lower surface of the metal thin plate 14 laminated and bonded to the lower surface of the ceramic substrate 13.
A load of 0.2 kgf / cm 2 is applied to the brazing filler metal 12 and the heat sink 18 in a stacked state, and the weight is set to 8 in a hydrogen atmosphere.
By heating the heat sink 18 to the second temperature
Brazing material 12, plastic porous metal layer 17 and second brazing material 1
It was laminated and adhered to the lower surface of the metal thin plate 14 through The pores of the plastic porous metal layer 17 were filled with silicone grease from the side surface of the metal layer 17. Thus, the power module substrate 10 was obtained.
【００１６】＜実施例２＞図２に示すように、ヒートシ
ンク２８をＡｌにより実施例１のヒートシンクと同形同
大に形成し、第２ろう材２２としてＡｌ−Ｓｉろう材の
箔を用いた。ヒートシンク２８は基部２８ａとフィン部
２８ｂとを有し、基部２８ａには実施例１のヒートシン
クのような溝を形成しなかった。またこのヒートシンク
２８の放熱特性は５℃／Ｗであった。セラミック基板１
３の下面に積層接着された金属薄板１４の下面に第２ろ
う材１２、可塑性多孔質金属層１７及び第２ろう材１２
を介してヒートシンク２８を重ねた状態でこれらに荷重
０．２ｋｇｆ／ｃｍ2を加え、真空中で６００℃に加熱
することにより、ヒートシンク２８を第２ろう材１２、
可塑性多孔質金属層１７及び第２ろう材１２を介して金
属薄板１４に積層接着した。このようにしてパワーモジ
ュール用基板２０を得た。上記以外の構成は実施例１と
同一であり、図２において図１と同一符号は同一部品を
示す。<Embodiment 2> As shown in FIG. 2, the heat sink 28 is formed of Al to have the same shape and size as the heat sink of Embodiment 1, and a foil of Al-Si brazing material is used as the second brazing material 22. . The heat sink 28 has a base portion 28a and a fin portion 28b, and no groove was formed in the base portion 28a like the heat sink of the first embodiment. The heat dissipation characteristic of the heat sink 28 was 5 ° C./W. Ceramic substrate 1
The second brazing filler metal 12, the plastic porous metal layer 17, and the second brazing filler metal 12 are formed on the lower surface of the metal thin plate 14 laminated and adhered to the lower surface of 3.
A load of 0.2 kgf / cm 2 is applied to these in a state where the heat sinks 28 are overlapped with each other through heating, and the heat sinks 28 are heated to 600 ° C. in a vacuum, so that the heat sink 28 is
It was laminated and adhered to the metal thin plate 14 via the plastic porous metal layer 17 and the second brazing material 12. In this way, the power module substrate 20 was obtained. The configuration other than the above is the same as that of the first embodiment, and the same symbols in FIG. 2 as those in FIG. 1 indicate the same components.
【００１７】＜実施例３＞図示しないが、可塑性多孔質
金属層は気孔率３０％のＡｌの多孔質焼結体である。こ
の可塑性多孔質金属層を以下の方法により製造した。先
ず平均粒径２５μｍのＡｌ粉５０ｇと、平均粒径９μｍ
のＣｕ粉１．２ｇと、水溶性メチルセルロース樹脂バイ
ンダ２．５ｇと、グリセリン５ｇと、界面活性剤０．５
ｇと、水２０ｇとを３０分間混練した後、ヘキサンを１
ｇ添加して更に３分間混練して得られた金属粉含有スラ
リーをドクタブレード法により成形体にした。次いで上
記成形体を温度４０℃に３０分間保持して上記成形体中
のヘキサンを揮発させて発泡させた後、温度９０℃に４
０分間保持し乾燥して薄板状多孔質成形体にした。次に
この多孔質成形体を空気中で６５０℃に１時間加熱して
保持した後、水素中で１０００℃に１時間加熱して保持
し、スケルトン構造を有する気孔率９３〜９６％、厚さ
３ｍｍの薄板状多孔質焼結体にした。更にこの多孔質焼
結体を厚さ１ｍｍに圧延して気孔率３０％の可塑性多孔
質金属層を得た。また第２ろう材としてＡｌ−Ｓｉろう
材の箔を用い、ヒートシンクをＣｕにより形成した。上
記以外の構成は実施例２と同一である。 ＜実施例４＞図示しないが、可塑性多孔質金属層がＡｌ
の多孔質焼結体であることを除いて、構成は実施例２と
同一である。Example 3 Although not shown, the plastic porous metal layer is a porous sintered body of Al having a porosity of 30%. This plastic porous metal layer was produced by the following method. First, 50 g of Al powder having an average particle size of 25 μm and an average particle size of 9 μm
Cu powder 1.2 g, water-soluble methyl cellulose resin binder 2.5 g, glycerin 5 g, and surfactant 0.5
g and 20 g of water were kneaded for 30 minutes, and hexane was added to 1
The metal powder-containing slurry obtained by adding g and kneading for 3 minutes was formed into a molded body by the doctor blade method. Next, the molded body is kept at a temperature of 40 ° C. for 30 minutes to volatilize hexane in the molded body to foam, and then to a temperature of 90 ° C. for 4 minutes.
It was kept for 0 minutes and dried to obtain a thin plate-shaped porous molded body. Next, this porous molded body was heated in air at 650 ° C. for 1 hour and held, and then heated in hydrogen at 1000 ° C. for 1 hour and held to have a skeleton structure and a porosity of 93 to 96% and a thickness. It was a thin plate-shaped porous sintered body of 3 mm. Further, this porous sintered body was rolled to a thickness of 1 mm to obtain a plastic porous metal layer having a porosity of 30%. A foil of Al-Si brazing material was used as the second brazing material, and the heat sink was made of Cu. The configuration other than the above is the same as that of the second embodiment. <Example 4> Although not shown, the plastic porous metal layer is made of Al.
The configuration is the same as in Example 2 except that the porous sintered body is
【００１８】＜実施例５＞図３に示すように、この例の
パワーモジュール用基板５０では、セラミック基板１３
の下面及び上面に第１ろう材５１であるＡｇ−Ｃｕ−Ｔ
ｉろう材の箔を介して活性金属法により金属薄板１３及
び回路基板１６をそれぞれ積層接着した。即ちセラミッ
ク基板１３の下面及び上面に第１ろう材５１を挟んで金
属薄板１４及び回路基板１６をそれぞれ重ねた状態でこ
れらに荷重２．０ｋｇｆ／ｃｍ2を加え、真空中で８５
０℃に加熱することにより積層接着した。上記以外の構
成は実施例１と同一であり、図３において図１と同一符
号は同一部品を示す。<Embodiment 5> As shown in FIG. 3, in the power module substrate 50 of this embodiment, the ceramic substrate 13 is used.
Ag-Cu-T which is the first brazing filler metal 51 on the lower surface and the upper surface of the
The metal thin plate 13 and the circuit board 16 were laminated and bonded by the active metal method via the foil of the brazing material. That is, a load of 2.0 kgf / cm 2 is applied to the lower surface and the upper surface of the ceramic substrate 13 with the first brazing filler metal 51 sandwiched therebetween and the metal thin plate 14 and the circuit substrate 16 are stacked, respectively, and the metal thin plate 14 and the circuit substrate 16 are vacuumed to 85
It was laminated and adhered by heating at 0 ° C. The configuration other than the above is the same as that of the first embodiment, and in FIG. 3, the same reference numerals as those in FIG. 1 denote the same components.
【００１９】＜実施例６＞図４に示すように、この例の
パワーモジュール基板６０では、セラミック基板１３の
下面及び上面に第１ろう材５１であるＡｇ−Ｃｕ−Ｔｉ
ろう材の箔を介して活性金属法により金属薄板１４及び
回路基板１６をそれぞれ積層接着したことを除いて、構
成は実施例２と同一である。図４において図２と同一符
号は同一部品を示す。 ＜実施例７及び８＞図示しないが、実施例７及び８で
は、セラミック基板の下面及び上面に第１ろう材である
Ａｇ−Ｃｕ−Ｔｉろう材の箔を介して活性金属法により
金属薄板及び回路基板をそれぞれ積層接着したことを除
いて、構成は実施例３及び４とそれぞれ同一である。<Embodiment 6> As shown in FIG. 4, in the power module substrate 60 of this embodiment, Ag-Cu-Ti, which is the first brazing material 51, is formed on the lower surface and the upper surface of the ceramic substrate 13.
The configuration is the same as that of the second embodiment except that the thin metal plate 14 and the circuit board 16 are laminated and adhered to each other by the active metal method through the brazing foil. 4, the same reference numerals as those in FIG. 2 indicate the same parts. <Embodiments 7 and 8> Although not shown, in Embodiments 7 and 8, a metal thin plate and a metal thin plate are formed on the lower surface and the upper surface of the ceramic substrate by the active metal method through the foil of Ag-Cu-Ti brazing material which is the first brazing material. The configurations are the same as those in Examples 3 and 4, except that the circuit boards are laminated and bonded.
【００２０】＜実施例９＞図示しないが、この例では、
金属薄板及び回路基板を厚さ０．４ｍｍのＡｌにより実
施例５の金属薄板及び回路基板と同じ大きさにそれぞれ
形成し、セラミック基板の下面及び上面に第１ろう材で
あるＡｌ−Ｓｉろう材の箔を介して金属薄板及び回路基
板をそれぞれ積層接着した。即ちセラミック基板の下面
及び上面に第１ろう材を挟んで金属薄板及び回路基板を
それぞれ重ねた状態でこれらに荷重２．０ｋｇｆ／ｃｍ
2を加え、真空中で６３０℃に加熱することにより積層
接着した。また第２ろう材としてＡｌ−Ｓｉろう材の箔
を用い、セラミック基板の下面積層接着された金属薄板
の下面に第２ろう材、可塑性多孔質金属層及び第２ろう
材を介してヒートシンクを重ねた状態でこれらに荷重
０．２ｋｇｆ／ｃｍ2を加え、真空中で６００℃に加熱
することにより、ヒートシンクを第２ろう材、可塑性多
孔質金属層及び第２ろう材を介して金属薄板に積層接着
した。上記以外の構成は実施例５と同一である。<Embodiment 9> Although not shown, in this example,
The metal thin plate and the circuit board are formed of Al having a thickness of 0.4 mm to the same size as the metal thin plate and the circuit board of Example 5, respectively, and Al-Si brazing material as the first brazing material is formed on the lower surface and the upper surface of the ceramic substrate. The thin metal plate and the circuit board were laminated and bonded via the foil of. That is, the metal thin plate and the circuit board are stacked on the lower surface and the upper surface of the ceramic substrate with the first brazing filler metal sandwiched therebetween, and a load of 2.0 kgf / cm is applied to them.
2 was added and laminated and adhered by heating to 630 ° C. in vacuum. A foil of Al-Si brazing material is used as the second brazing material, and a heat sink is superposed on the lower surface of the metal thin plate adhered to the lower surface of the ceramic substrate through the second brazing material, the plastic porous metal layer and the second brazing material. In this state, a load of 0.2 kgf / cm 2 is applied to these, and the heat sink is heated to 600 ° C. in a vacuum, so that the heat sink is laminated on the metal thin plate through the second brazing filler metal, the plastic porous metal layer and the second brazing filler metal. Glued The configuration other than the above is the same as that of the fifth embodiment.
【００２１】＜実施例１０〜１２＞図示しないが、実施
例１０〜１２では、金属薄板及び回路基板をＡｌにより
それぞれ形成し、第１ろう材としてＡｌ−Ｓｉろう材の
箔を用いたことを除いて、構成は実施例６〜８とそれぞ
れ同一である。 ＜実施例１３〜１６＞図示しないが、実施例１３〜１６
では、セラミック基板をＡｌＮにより形成したことを除
いて、構成は実施例１〜４とそれぞれ同一である。但
し、予めセラミック基板を１３００℃で酸化処理してそ
の表面にＡｌ2Ｏ3層を最適な厚さで形成しておいた。 ＜実施例１７〜２４＞図示しないが、実施例１７〜２４
では、セラミック基板をＡｌＮにより形成したことを除
いて、構成は実施例５〜１２とそれぞれ同一である。<Examples 10 to 12> Although not shown, in Examples 10 to 12, the thin metal plate and the circuit board were each formed of Al, and the foil of Al-Si brazing material was used as the first brazing material. Except for this, the configuration is the same as that of each of Examples 6 to 8. <Examples 13 to 16> Although not shown, Examples 13 to 16
Then, the configuration is the same as that of each of Examples 1 to 4 except that the ceramic substrate is made of AlN. However, the ceramic substrate was previously oxidized at 1300 ° C. and an Al 2 O 3 layer was formed on the surface of the ceramic substrate with an optimum thickness. <Examples 17 to 24> Although not shown, Examples 17 to 24
Then, the configuration is the same as that of each of Examples 5 to 12 except that the ceramic substrate is made of AlN.
【００２２】＜比較例１＞図６に示すように、可塑性多
孔質金属層を用いないことを除いて、実施例１と同一の
構成のパワーモジュール用基板５を比較例１とした。即
ちパワーモジュール用基板５はセラミック基板３の下面
及び上面にＤＢＣ法によりそれぞれ直接積層接着された
金属薄板４及び回路基板６と、金属薄板４に第２ろう材
２であるＡｇ−Ｃｕろう材の箔を介して積層接着された
ヒートシンク８とを備える。 ＜比較例２＞図７に示すように、可塑性多孔質金属層を
用いないことを除いて、実施例５と同一の構成のパワー
モジュール用基板９を比較例２とした。即ちパワーモジ
ュール用基板９はセラミック基板３の下面及び上面に第
１ろう材１であるＡｇ−Ｃｕ−Ｔｉろう材の箔を介して
活性金属法によりそれぞれ積層接着された金属薄板４及
び回路基板６と、金属薄板４に第２ろう材２であるＡｇ
−Ｃｕろう材の箔を介して積層接着されたヒートシンク
８とを備える。 ＜比較例３及び４＞図示しないが、可塑性多孔質金属層
を用いないことを除いて、実施例１３及び１７と同一の
構成のパワーモジュール用基板をそれぞれ比較例３及び
４とした。上記実施例１〜２４及び比較例１〜４の構成
を表１にまとめた。Comparative Example 1 As shown in FIG. 6, a power module substrate 5 having the same structure as that of Example 1 was used as Comparative Example 1 except that the plastic porous metal layer was not used. That is, the power module substrate 5 includes a metal thin plate 4 and a circuit board 6 which are directly laminated and adhered to the lower surface and the upper surface of the ceramic substrate 3 by the DBC method, and the metal thin plate 4 is made of Ag-Cu brazing material which is the second brazing material 2. And a heat sink 8 laminated and adhered via foil. Comparative Example 2 As shown in FIG. 7, a power module substrate 9 having the same structure as in Example 5 except that the plastic porous metal layer was not used was Comparative Example 2. That is, the power module substrate 9 is a metal thin plate 4 and a circuit board 6 which are laminated and adhered to the lower surface and the upper surface of the ceramic substrate 3 by the active metal method via the foil of Ag-Cu-Ti brazing material which is the first brazing material 1. And Ag which is the second brazing filler metal 2 on the thin metal plate 4.
A heat sink 8 laminated and adhered via a foil of a Cu brazing material. <Comparative Examples 3 and 4> Although not shown, Comparative Example 3 and 4 are power module substrates having the same configurations as those of Examples 13 and 17, except that the plastic porous metal layer is not used. The configurations of Examples 1 to 24 and Comparative Examples 1 to 4 are summarized in Table 1.
【００２３】[0023]
【表１】 [Table 1]
【００２４】＜比較試験と評価＞実施例１〜２４及び比
較例１〜４のパワーモジュール用基板に−４０℃〜１２
５℃の温度サイクル条件で０サイクル（温度サイクルを
全く与えない）、１０サイクル及び５０サイクルの温度
サイクルを与えた後の熱抵抗及びセラミック基板の割れ
について調べた。熱抵抗Ｒth（℃）は回路基板上に縦及
び横とも１５ｍｍの矩形の発熱体（図示せず）を２個Ｐ
ｂ−Ｓｎはんだを介して接着し、この発熱体を１０Ｗで
発熱させたときの周囲空気温度Ｔa（℃）と発熱体の温
度Ｔj（℃）とを測定して式より求めた。 Ｒth＝（Ｔj−Ｔa）／１０ …… またセラミック基板の割れ率Ｃr（％）はセラミック基
板から回路基板をエッチングして全て剥がし、顕微鏡で
積層接着周囲の割れの長さＬc（ｍｍ）とエッチング前
の回路の全周長さＬa（ｍｍ）を測定して式より求め
た。 Ｃr＝（Ｌc／Ｌa）×１００ …… これらの結果を表２に示す。<Comparative Test and Evaluation> The power module substrates of Examples 1 to 24 and Comparative Examples 1 to 4 were -40 ° C to 12 ° C.
The thermal resistance and the cracking of the ceramic substrate after the temperature cycle of 5 ° C. for 0 cycles (no temperature cycle was applied), 10 cycles and 50 cycles were examined. The thermal resistance R th (° C.) is 15 mm in length and width on the circuit board. Two rectangular heating elements (not shown) P
The ambient air temperature T a (° C.) and the temperature T j (° C.) of the heating element when the heating element was heated at 10 W and adhered via b-Sn solder were measured and determined from the equation. R th = (T j -T a ) / 10 ...... Further cracking rate C r (%) of the ceramic substrate peeled all by etching the circuit board from the ceramic substrate, the length L c of the cracking of the laminate adhesive around a microscope (mm) and by measuring the entire peripheral length L a (mm) of the circuit before the etching was calculated from the equation. C r = (L c / L a ) × 100 ... The results are shown in Table 2.
【００２５】[0025]
【表２】 [Table 2]
【００２６】表２から明らかなように、割れ率は実施例
の方が従来例より著しく低くなっていることが判った。
また熱抵抗は０サイクルでは実施例より比較例の方が僅
かに良いが、１０サイクル以上では実施例の方が比較例
より良くなっていることが判った。As is apparent from Table 2, it was found that the cracking rate of the example was significantly lower than that of the conventional example.
It was also found that the thermal resistance of the comparative example was slightly better than that of the example at 0 cycles, but the thermal resistance of the example was better than that of the comparative example at 10 cycles or more.
【００２７】なお、上記実施例では基部とフィン部とを
有するヒートシンクを挙げたが、これに限らず図５に示
すように Ａｌ等により形成された筐体をヒートシンク
７８としてもよい。図５において図２と同一符号は同一
部品を示す。Although the heat sink having the base portion and the fin portion is described in the above embodiment, the present invention is not limited to this, and as shown in FIG. 5, a housing formed of Al or the like may be used as the heat sink 78. 5, the same reference numerals as those in FIG. 2 indicate the same parts.
【００２８】[0028]
【発明の効果】以上述べたように、本発明によれば、セ
ラミック基板に直接又は第１ろう材を介して金属薄板を
積層接着し、金属薄板に第２ろう材と可塑性多孔質金属
層と第２ろう材とを介してセラミック基板と異なる熱膨
張係数を有するヒートシンクを積層接着したので、可塑
性多孔質金属層が熱変形を吸収してセラミック基板の反
りや割れを防止できる。また可塑性多孔質金属層が気孔
率２０〜５０％のＣｕ，Ａｌ又はＡｇの多孔質焼結体で
あり、この可塑性多孔質金属層にシリコーングリース、
シリコーンオイル又はエポキシ樹脂を充填すれば、放熱
特性を損うことがない。As described above, according to the present invention, the metal thin plates are laminated and adhered to the ceramic substrate directly or through the first brazing material, and the second brazing material and the plastic porous metal layer are formed on the metal thin plate. Since the heat sink having a different thermal expansion coefficient from that of the ceramic substrate is laminated and adhered through the second brazing material, the plastic porous metal layer can absorb the thermal deformation and prevent the ceramic substrate from warping or cracking. The plastic porous metal layer is a porous sintered body of Cu, Al or Ag having a porosity of 20 to 50%, and the plastic porous metal layer has a silicone grease,
Filling with silicone oil or epoxy resin does not impair the heat dissipation characteristics.
【図１】本発明実施例１のパワーモジュール用基板の断
面図。FIG. 1 is a sectional view of a power module substrate according to a first embodiment of the present invention.
【図２】本発明の実施例２を示す図１に対応する断面
図。FIG. 2 is a sectional view corresponding to FIG. 1, showing a second embodiment of the present invention.
【図３】本発明の実施例５を示す図１に対応する断面
図。FIG. 3 is a sectional view corresponding to FIG. 1, showing a fifth embodiment of the present invention.
【図４】本発明の実施例６を示す図２に対応する断面
図。FIG. 4 is a sectional view corresponding to FIG. 2, showing a sixth embodiment of the present invention.
【図５】本発明の実施例２５を示す図２に対応する断面
図。FIG. 5 is a sectional view corresponding to FIG. 2, showing a twenty-fifth embodiment of the present invention.
【図６】比較例１を示す図１に対応する断面図。6 is a sectional view showing Comparative Example 1 corresponding to FIG.
【図７】比較例２を示す図１に対応する断面図。7 is a cross-sectional view corresponding to FIG. 1 showing Comparative Example 2. FIG.
１０，２０，５０，６０，７０ パワーモジュール用基
板 １２，２２ 第２ろう材 １３ セラミック基板 １４ 金属薄板 １７ 可塑性多孔質金属層 １８，２８，７８ ヒートシンク ５１ 第１ろう材10, 20, 50, 60, 70 Power module substrate 12, 22 Second brazing material 13 Ceramic substrate 14 Metal thin plate 17 Plastic porous metal layer 18, 28, 78 Heat sink 51 First brazing material
フロントページの続き (72)発明者 初鹿 昌文 埼玉県大宮市北袋町１丁目297番地 三菱 マテリアル株式会社中央研究所内Front page continuation (72) Inventor Masafumi Hatsuka 1-297 Kitabukurocho, Omiya City, Saitama Prefecture Central Research Laboratory, Mitsubishi Materials Corporation
Claims (10)
材(51)を介して積層接着された金属薄板(14)と、 前記金属薄板(14)に第２ろう材(12,22)と可塑性多孔質
金属層(17)と前記第２ろう材(12,22)とを介して積層接
着され前記セラミック基板(13)と異なる熱膨張係数を有
するヒートシンク(18,28,78)とを備えたパワーモジュー
ル用基板。1. A metal thin plate (14) laminated and adhered to a ceramic substrate (13) directly or via a first brazing material (51), and a second brazing material (12, 22) on the metal thin plate (14). And a heat sink (18, 28, 78) laminated and adhered via the plastic porous metal layer (17) and the second brazing material (12, 22) and having a thermal expansion coefficient different from that of the ceramic substrate (13). Equipped with a power module substrate.
Ｎにより形成された請求項１記載のパワーモジュール用
基板。2. The ceramic substrate (13) is made of Al 2 O 3 or Al.
The power module substrate according to claim 1, which is formed of N.
記金属薄板(14)が直接セラミック基板(13)に積層接着さ
れた請求項１又は２記載のパワーモジュール用基板。3. The power module substrate according to claim 1, wherein the metal thin plate (14) is formed of Cu, and the metal thin plate (14) is directly laminated and adhered on the ceramic substrate (13).
１ろう材(51)がＡｇ−Ｃｕ−Ｔｉろう材である請求項１
又は２記載のパワーモジュール用基板。4. The thin metal plate (14) is made of Cu, and the first brazing material (51) is Ag—Cu—Ti brazing material.
Alternatively, the power module substrate described in 2.
１ろう材(51)がＡｌ−Ｓｉろう材である請求項１又は２
記載のパワーモジュール用基板。5. The thin metal plate (14) is made of Al, and the first brazing material (51) is an Al—Si brazing material.
The power module substrate described.
５０％のＣｕ，Ａｌ又はＡｇの多孔質焼結体である請求
項１ないし５いずれか記載のパワーモジュール用基板。6. The plastic porous metal layer (17) has a porosity of 20 to 20.
The power module substrate according to claim 1, which is a porous sintered body of 50% Cu, Al or Ag.
リース、シリコーンオイル又はエポキシ樹脂が充填され
た請求項１ないし６いずれか記載のパワーモジュール用
基板。7. The substrate for power module according to claim 1, wherein the plastic porous metal layer (17) is filled with silicone grease, silicone oil or epoxy resin.
により形成された請求項１ないし７いずれか記載のパワ
ーモジュール用基板。8. The heat sink (18, 28, 78) is made of Cu or Al.
The power module substrate according to any one of claims 1 to 7, which is formed by:
ｕにより形成され、可塑性多孔質金属層(17)がＣｕ又は
Ａｇにより形成され、第２ろう材(12)がＡｇ−Ｃｕろう
材である請求項１記載のパワーモジュール用基板。9. The thin metal plate (14) and the heat sink (18) are made of C.
2. The power module substrate according to claim 1, wherein the plastic porous metal layer (17) is made of u, the plastic porous metal layer (17) is made of Cu or Ag, and the second brazing material (12) is an Ag-Cu brazing material.
7)及びヒートシンク(28,78)の少なくともいずれか１つ
がＡｌにより形成され、第２ろう材(22)がＡｌ−Ｓｉろ
う材である請求項１記載のパワーモジュール用基板。10. A thin metal plate (14), a plastic porous metal layer (1)
7. The power module substrate according to claim 1, wherein at least one of the heat sink (28) and the heat sink (28, 78) is made of Al, and the second brazing material (22) is an Al-Si brazing material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14228695A JP3180621B2 (en) | 1995-06-09 | 1995-06-09 | Power module substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14228695A JP3180621B2 (en) | 1995-06-09 | 1995-06-09 | Power module substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08335651A true JPH08335651A (en) | 1996-12-17 |
| JP3180621B2 JP3180621B2 (en) | 2001-06-25 |
Family
ID=15311846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14228695A Expired - Lifetime JP3180621B2 (en) | 1995-06-09 | 1995-06-09 | Power module substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3180621B2 (en) |
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|---|---|---|---|---|
| WO2007037306A1 (en) * | 2005-09-28 | 2007-04-05 | Ngk Insulators, Ltd. | Heat sink module and process for producing the same |
| JP2007273755A (en) * | 2006-03-31 | 2007-10-18 | Mitsubishi Materials Corp | Heat sink as well as power module member, and power module |
| JP2010147398A (en) * | 2008-12-22 | 2010-07-01 | Mitsubishi Materials Corp | Substrate for power module and method of manufacturing the same |
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| JP2016012612A (en) * | 2014-06-27 | 2016-01-21 | 三菱マテリアル株式会社 | Base plate for power module with heat sink, manufacturing method and power module |
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|---|---|---|---|---|
| WO2007037306A1 (en) * | 2005-09-28 | 2007-04-05 | Ngk Insulators, Ltd. | Heat sink module and process for producing the same |
| JP5128951B2 (en) * | 2005-09-28 | 2013-01-23 | 日本碍子株式会社 | Heat sink module and manufacturing method thereof |
| JP2007273755A (en) * | 2006-03-31 | 2007-10-18 | Mitsubishi Materials Corp | Heat sink as well as power module member, and power module |
| JP4626555B2 (en) * | 2006-03-31 | 2011-02-09 | 三菱マテリアル株式会社 | Heat sink, power module member and power module |
| JP2010147398A (en) * | 2008-12-22 | 2010-07-01 | Mitsubishi Materials Corp | Substrate for power module and method of manufacturing the same |
| KR20140127228A (en) * | 2012-02-01 | 2014-11-03 | 미쓰비시 마테리알 가부시키가이샤 | Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, and paste for bonding copper member |
| JP2013211288A (en) * | 2012-03-30 | 2013-10-10 | Mitsubishi Materials Corp | Manufacturing method of substrate for power module with heat sink |
| JP2015126168A (en) * | 2013-12-27 | 2015-07-06 | 三菱電機株式会社 | Power module |
| JP2016012612A (en) * | 2014-06-27 | 2016-01-21 | 三菱マテリアル株式会社 | Base plate for power module with heat sink, manufacturing method and power module |
| WO2024048358A1 (en) * | 2022-09-01 | 2024-03-07 | デクセリアルズ株式会社 | Laminate and method for manufacturing laminate |
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| Publication number | Publication date |
|---|---|
| JP3180621B2 (en) | 2001-06-25 |
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