JPH08319563A - Formation of gap layer in thin film magnetic head - Google Patents
Formation of gap layer in thin film magnetic headInfo
- Publication number
- JPH08319563A JPH08319563A JP14673895A JP14673895A JPH08319563A JP H08319563 A JPH08319563 A JP H08319563A JP 14673895 A JP14673895 A JP 14673895A JP 14673895 A JP14673895 A JP 14673895A JP H08319563 A JPH08319563 A JP H08319563A
- Authority
- JP
- Japan
- Prior art keywords
- gap layer
- film
- magnetic head
- thin film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、薄膜磁気ヘッドにAl
2 O3 ギャップ層をスパッタ法により形成する方法に関
し、更に詳しく述べると、スパッタリングの際に基板に
バイアス電力を投入すると共に、成膜するためのArガ
ス中にO2 ガスを微量混合して高絶縁性能のAl2 O3
成膜を行う方法に関するものである。この技術は、特に
MR型(磁気抵抗効果型)薄膜磁気ヘッドのギャップ層
形成に有用である。BACKGROUND OF THE INVENTION The present invention relates to a thin film magnetic head made of Al.
The method for forming the 2 O 3 gap layer by the sputtering method will be described in more detail. At the time of sputtering, bias power is applied to the substrate, and a small amount of O 2 gas is mixed with Ar gas for forming a film to increase the sputtering. Insulation performance of Al 2 O 3
The present invention relates to a method for forming a film. This technique is particularly useful for forming a gap layer of an MR (magnetoresistive effect) thin film magnetic head.
【0002】[0002]
【従来の技術】周知のように、ハードディスク用薄膜磁
気ヘッドには誘導型やMR型がある。誘導型薄膜磁気ヘ
ッドは、セラミックス基板上に設ける上下2層の磁極を
ギャップ層で分離し、その間に磁界発生用及び誘導電流
ピックアップ用のコイル膜を形成する構造である。MR
型薄膜磁気ヘッドは、磁界又は磁化により電気抵抗が変
化するMR効果(磁気抵抗効果)を情報の読出し(再
生)に利用するものであって、基板上にMR素子を有す
る読出し素子部を設け、該読出し素子部の上に磁界発生
用のコイル膜を有する書込み素子部を積層する構成であ
る。このMR型薄膜磁気ヘッドには、読出し素子部の上
部シールドと書込み素子部の下部磁極とを分離層(素子
間ギャップ)を介して別々に設ける分離型と、読出し素
子部の上部シールドと書込み素子部の下部磁極とを兼用
させる共有型とがある。共有型は、形成する層数が少な
く、その分工程が簡略化されることもあって、現在MR
型薄膜磁気ヘッドの主流となっている。2. Description of the Related Art As is well known, thin-film magnetic heads for hard disks include induction type and MR type. The induction type thin film magnetic head has a structure in which upper and lower two magnetic poles provided on a ceramic substrate are separated by a gap layer, and a coil film for magnetic field generation and an induction current pickup is formed therebetween. MR
The thin film magnetic head uses the MR effect (magnetoresistive effect) in which the electric resistance changes due to a magnetic field or magnetization for reading (reproducing) information, and a read element section having an MR element is provided on a substrate, The write element section having a coil film for magnetic field generation is laminated on the read element section. The MR type thin film magnetic head includes a separation type in which an upper shield of the read element section and a lower magnetic pole of the write element section are separately provided via a separation layer (inter-element gap), and an upper shield of the read element section and a write element. There is a shared type which also serves as the lower magnetic pole of the part. In the shared type, the number of layers to be formed is small and the process is simplified accordingly, so that the MR type is currently used.
Type thin film magnetic head has become the mainstream.
【0003】共有型のMR型薄膜磁気ヘッドの要部の一
例を図1に示す。Aは浮上面に平行な断面を表し、Bは
それに垂直なx−x断面を表している。前述のように、
セラミックス基板10上に読出し素子部12を設け、そ
の上に書込み素子部14を設ける。読出し素子部12
は、MR素子16と該MR素子16の両端近傍の上面に
設けたリード18を有し、それらが下部シールド20と
上部シールド兼下部磁極22の間に位置し、間にギャッ
プ層24が介在する構成である。書込み素子部14は、
前記上部シールド兼下部磁極22、書込み用のギャップ
層26、上部磁極28を有し、浮上面から奥まった位置
で、上部シールド兼下部磁極22と上部磁極28との間
に絶縁層30を介して単層あるいは複数層のコイル膜3
2を配置した構成である。FIG. 1 shows an example of a main part of a shared type MR thin film magnetic head. A represents a cross section parallel to the air bearing surface, and B represents a xx cross section perpendicular thereto. Like above-mentioned,
The read element section 12 is provided on the ceramic substrate 10, and the write element section 14 is provided thereon. Read element unit 12
Has an MR element 16 and leads 18 provided on the upper surface in the vicinity of both ends of the MR element 16, which are located between a lower shield 20 and an upper shield / lower magnetic pole 22, and a gap layer 24 is interposed therebetween. It is a composition. The writing element unit 14 is
It has the upper shield / lower magnetic pole 22, the write gap layer 26, and the upper magnetic pole 28. The insulating layer 30 is provided between the upper shield / lower magnetic pole 22 and the upper magnetic pole 28 at a position recessed from the air bearing surface. Single-layer or multi-layer coil film 3
This is a configuration in which two are arranged.
【0004】図1に示す薄膜磁気ヘッドのギャップ層2
4,26は、通常、Al2 O3 (アルミナ)膜からな
り、一般的なRF(高周波)マグネトロンスパッタ法も
しくはRF2極スパッタ法により成膜している。図2に
示すように、Al2 O3 ターゲット40に高周波電力を
供給し、基板42側をアースして、Arガス中で放電さ
せることで成膜を行っている。The gap layer 2 of the thin film magnetic head shown in FIG.
4, 26 are usually made of Al 2 O 3 (alumina) film, and are formed by a general RF (high frequency) magnetron sputtering method or an RF bipolar sputtering method. As shown in FIG. 2, high-frequency power is supplied to the Al 2 O 3 target 40, the substrate 42 side is grounded, and discharge is performed in Ar gas to form a film.
【0005】[0005]
【発明が解決しようとする課題】薄膜磁気ヘッドの高性
能化に伴い、ギャップ層となるAl2 O3 膜は、その膜
厚が5000Å以下(4000Å程度以上)と薄くなっ
てきており、特にMR型薄膜磁気ヘッドのMR素子16
と下部シールド20との間、あるいはリード18と上部
シールド兼下部磁極22との間は1500Å以下(70
0Å程度以上)と非常に薄くなっている。またギャップ
層を素子パターン上に成膜すると、段差部においてステ
ップカバレッジ性が悪くなる(段差部の角部で膜が薄く
なる)。その結果、従来技術により成膜されたAl2 O
3 膜は、絶縁性能が著しく低下し電気的素子破壊が生じ
る問題があった。As the performance of thin-film magnetic heads has been improved, the Al 2 O 3 film forming the gap layer has become thinner, with a film thickness of 5000 Å or less (about 4000 Å or more). Type thin film magnetic head MR element 16
And the lower shield 20, or between the lead 18 and the upper shield / lower magnetic pole 22 is 1500 Å or less (70
It is very thin, around 0Å or more). Further, when the gap layer is formed on the element pattern, the step coverage is deteriorated at the step portion (the film becomes thin at the corners of the step portion). As a result, Al 2 O formed by the conventional technique
The three films had a problem that the insulation performance was remarkably deteriorated and electrical element destruction occurred.
【0006】本発明の目的は、薄膜磁気ヘッドの高性能
化に伴いギャップ層が非常に薄くなっても、膜自体が高
絶縁性能を呈し、且つ段差部におけるステップカバレッ
ジ性にすぐれているために、電気的素子破壊が生じない
ような薄膜磁気ヘッドのギャップ層形成方法を提供する
ことである。An object of the present invention is that the film itself exhibits high insulation performance even when the gap layer becomes very thin as the performance of the thin film magnetic head becomes higher, and the step coverage in the step portion is excellent. Another object of the present invention is to provide a method for forming a gap layer of a thin film magnetic head that does not cause electrical element destruction.
【0007】[0007]
【課題を解決するための手段】従来技術における絶縁劣
化の要因を種々検討した結果、段差部で膜が薄くなるこ
とと、膜自体の組成がAl2 O3 (アルミナ)となるべ
きところターゲット材料に比べて酸素の欠乏によりAl
(アルミニウム)に近い組成になっていることの両方に
あることが判明した。As a result of various studies on the factors of the insulation deterioration in the prior art, the film becomes thin at the step portion and the composition of the film itself should be Al 2 O 3 (alumina). Due to lack of oxygen compared to Al
It was found that the composition was close to that of (aluminum).
【0008】そこで本発明は、セラミックス基板上に設
ける複数の磁性層の間をAl2 O3からなるギャップ層
で離間する構造の薄膜磁気ヘッドを製造する際にギャッ
プ層を形成する方法において、Al2 O3 ターゲットに
高周波電力を供給してスパッタ法によりギャップ層とな
るAl2 O3 膜を成膜する際、基板にバイアス電力を投
入すると共に、成膜するためのArガス中にO2 ガスを
微量混合して成膜を行うように構成した薄膜磁気ヘッド
のギャップ層形成方法である。ここでスパッタ装置中の
酸素混合比(O2 /Al)は2〜5%に制御するのが好
ましい。Therefore, the present invention relates to a method of forming a gap layer when manufacturing a thin film magnetic head having a structure in which a plurality of magnetic layers provided on a ceramic substrate are separated by a gap layer made of Al 2 O 3. When depositing an Al 2 O 3 film to be a gap layer by supplying high frequency power to a 2 O 3 target by a sputtering method, bias power is applied to the substrate and O 2 gas is added to the Ar gas for deposition. Is a method for forming a gap layer of a thin-film magnetic head configured to form a film by mixing a small amount of. Here, it is preferable to control the oxygen mixture ratio (O 2 / Al) in the sputtering device to 2 to 5%.
【0009】[0009]
【作用】基板側にバイアス電力を投入してスパッタリン
グを行うと、たとえ段差部があっても、その段差部を平
滑化しながら膜が付着していき、角部もほぼ均一な膜が
できる。またスパッタリングのためのArガス中にO2
ガスを微量含ませているため、成膜中に雰囲気中の酸素
が混入して反応し、酸素不足が補われ、アルミニウムに
近いアルミナ膜は完全なアルミナ膜になる。これらによ
って、ギャップ層の絶縁性能が向上する。When the bias power is applied to the substrate side to perform sputtering, even if there is a step, the film is deposited while smoothing the step, and a film with substantially uniform corners is formed. In addition, O 2 was added to Ar gas for sputtering.
Since a small amount of gas is contained, oxygen in the atmosphere is mixed and reacts during film formation, oxygen shortage is compensated, and the alumina film close to aluminum becomes a complete alumina film. These improve the insulation performance of the gap layer.
【0010】[0010]
【実施例】図3は本発明方法の一実施例を示す説明図で
ある。セラミックス基板上に設ける複数の磁性層の間を
Al2 O3 からなるギャップ層で離間する構造の薄膜磁
気ヘッドを製造する際にギャップ層を形成する方法にお
いて、Al2 O3 ターゲット40に高周波電力を供給し
てスパッタ法によりギャップ層となるAl2 O3 膜を成
膜する際、基板42側にバイアス電力を投入すると共
に、成膜するためのArガス中にO2 ガスを微量混合し
て成膜を行う。ここで、基板側に供給するバイアス電力
を100〜300Wに制御し、酸素混合比(O2 /A
l)を2〜5%に制御するするのがよい。FIG. 3 is an explanatory view showing an embodiment of the method of the present invention. A method of forming a gap layer in manufacturing the thin film magnetic head structures spaced apart by a gap layer formed between the plurality of magnetic layers provided on the ceramic substrate from the Al 2 O 3, high frequency power to the Al 2 O 3 target 40 When an Al 2 O 3 film to be a gap layer is formed by supplying Al 2 O 3 to the substrate 42, bias power is applied to the substrate 42 side, and a small amount of O 2 gas is mixed in Ar gas for forming the film. A film is formed. Here, the bias power supplied to the substrate side is controlled to 100 to 300 W, and the oxygen mixture ratio (O 2 / A
It is preferable to control 1) to 2-5%.
【0011】Al2 O3 の膜厚が1500Åの場合、電
気絶縁抵抗は次のようになる。When the film thickness of Al 2 O 3 is 1500 Å, the electric insulation resistance is as follows.
【表1】 [Table 1]
【0012】従来技術において、Al2 O3 膜の絶縁性
能の低下の要因は、 膜中酸素の欠乏(アルミニウムに近い組成のアルミナ
となっている) ステップカバレッジ性の低下(段差部で膜が薄くな
る) の2点と考えられる。本発明方法では、Arガス中に微
量のO2 を含ませることで、膜中酸素量が安定し(ほぼ
完全なアルミナとなる)、且つ基板側にバイアス電力を
供給することで、段差部を平滑化しながら成膜するため
にステップカバレッジ性が向上する。このため、膜厚が
薄い場合及び素子上のような段差部への成膜に対して
も、絶縁性能が低下するのを防止できる。本発明方法で
は、表1のように絶縁性能を×1010〜×1012Ωまで
向上できるため、膜厚を薄く(但し、700Å以上)す
ることが可能となる。In the prior art, the cause of the deterioration of the insulation performance of the Al 2 O 3 film is that oxygen deficiency in the film (alumina having a composition close to aluminum) deteriorates the step coverage (the film is thin at the step portion). It is considered to be two points. In the method of the present invention, the amount of oxygen in the film is stabilized (becomes almost completely alumina) by including a trace amount of O 2 in the Ar gas, and the bias power is supplied to the substrate side, so that the step portion is formed. The step coverage is improved because the film is formed while smoothing. For this reason, it is possible to prevent the insulation performance from deteriorating even when the film thickness is thin or when a film is formed on a stepped portion such as an element. According to the method of the present invention, the insulation performance can be improved to × 10 10 to × 10 12 Ω as shown in Table 1, so that the film thickness can be reduced (however, 700 Å or more).
【0013】実験結果によれば、Al2 O3 成膜時の基
板バイアスを100〜300Wに制御することで、十分
なステップカバレッジ性が得られる。アルゴンガス中の
酸素混合比(O2 /Ar)は2〜5%に制御すること
で、最も安定したAl2 O3 膜が得られる。O2 /Ar
が2%未満だと、酸素を加える効果が殆どない。逆に、
O2 /Arが5%を超えると、スパッタリングに悪影響
が生じ、放電が乱れて膜厚分布が悪くなったり、スパッ
タ粒子のエネルギー分布が悪くなり、ギャップ長の制御
が難しくなる。According to the experimental results, sufficient step coverage can be obtained by controlling the substrate bias during the Al 2 O 3 film formation to 100 to 300 W. The most stable Al 2 O 3 film can be obtained by controlling the oxygen mixture ratio (O 2 / Ar) in the argon gas to 2 to 5%. O 2 / Ar
Is less than 2%, there is almost no effect of adding oxygen. vice versa,
When O 2 / Ar exceeds 5%, the sputtering is adversely affected, the discharge is disturbed, the film thickness distribution is deteriorated, and the energy distribution of the sputtered particles is deteriorated, which makes it difficult to control the gap length.
【0014】[0014]
【発明の効果】本発明は、スパッタ法によるAl2 O3
成膜の際に、Arガス中にO2 を微量混合すると共に、
基板側にバイアス電力を供給するように構成したことに
より、膜自体の絶縁抵抗が高くなり、且つ段差部のステ
ップカバレッジ性も良好であるため、膜厚が薄くても高
絶縁性能を呈し、素子破壊が生じるのを防止できる。こ
れによって薄膜磁気ヘッドのギャップ層を薄くでき、薄
膜磁気ヘッドを高機能化することが可能となる。INDUSTRIAL APPLICABILITY The present invention is based on Al 2 O 3 produced by sputtering.
At the time of film formation, a small amount of O 2 was mixed in Ar gas, and
Since the bias power is supplied to the substrate side, the insulation resistance of the film itself is high and the step coverage of the stepped portion is good, so that even if the film thickness is thin, high insulation performance is exhibited. It is possible to prevent destruction. As a result, the gap layer of the thin film magnetic head can be thinned, and the thin film magnetic head can be made highly functional.
【図1】薄膜磁気ヘッドの一例を示す説明図。FIG. 1 is an explanatory diagram showing an example of a thin film magnetic head.
【図2】従来のスパッタ法を示す説明図。FIG. 2 is an explanatory view showing a conventional sputtering method.
【図3】本発明で用いるスパッタ法を示す説明図。FIG. 3 is an explanatory view showing a sputtering method used in the present invention.
10 セラミックス基板 12 読出し部 14 書込み部 16 MR素子 20 下部シールド 22 上部シールド兼下部磁極 24,26 ギャップ層 28 上部磁極 40 ターゲット材 42 基板 10 Ceramics Substrate 12 Reading Section 14 Writing Section 16 MR Element 20 Lower Shield 22 Upper Shield / Lower Magnetic Pole 24, 26 Gap Layer 28 Upper Magnetic Pole 40 Target Material 42 Substrate
Claims (2)
層の間をAl2 O3からなるギャップ層で離間する構造
の薄膜磁気ヘッドを製造する際のギャップ層形成方法に
おいて、Al2 O3 ターゲットに高周波電力を供給して
スパッタ法によりギャップ層となるAl2 O3 膜を成膜
する際、基板にバイアス電力を投入すると共に、成膜す
るためのArガス中にO2 ガスを微量混合して成膜を行
うことを特徴とする薄膜磁気ヘッドのギャップ層形成方
法。1. A gap layer forming process in manufacturing the thin film magnetic head structure between the plurality of magnetic layers provided on the ceramic substrate separated by a gap layer made of Al 2 O 3, the Al 2 O 3 target When an Al 2 O 3 film to be a gap layer is formed by supplying high-frequency power by a sputtering method, bias power is applied to the substrate and a small amount of O 2 gas is mixed in Ar gas for forming the film. A method for forming a gap layer of a thin film magnetic head, which comprises forming a film.
制御する請求項1記載のギャップ層形成方法。2. The gap layer forming method according to claim 1, wherein the oxygen mixture ratio (O 2 / Al) is controlled to 2 to 5%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14673895A JPH08319563A (en) | 1995-05-22 | 1995-05-22 | Formation of gap layer in thin film magnetic head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14673895A JPH08319563A (en) | 1995-05-22 | 1995-05-22 | Formation of gap layer in thin film magnetic head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08319563A true JPH08319563A (en) | 1996-12-03 |
Family
ID=15414484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14673895A Withdrawn JPH08319563A (en) | 1995-05-22 | 1995-05-22 | Formation of gap layer in thin film magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH08319563A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6795014B2 (en) | 2002-10-28 | 2004-09-21 | Hyundai Motor Company | Method and apparatus for detecting vehicle distance |
-
1995
- 1995-05-22 JP JP14673895A patent/JPH08319563A/en not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6795014B2 (en) | 2002-10-28 | 2004-09-21 | Hyundai Motor Company | Method and apparatus for detecting vehicle distance |
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