JPH08313935A - Lcd device of type integrated with cpu and its production - Google Patents

Abstract

PURPOSE: To provide an LCD device of a type integrated with a CPU by using a non-alkaline glass substrate. CONSTITUTION: This LCD device is composed of an LCD circuit which is formed with a TFT array 21 by using polycrystalline silicon as well as drivers for driving TFTs having a TFT source driver 22 and a TFT gate driver 23 on the non-alkaline glass substrate 1 and a CPU circuit which is formed with a bare chip of a CPU 31, RAM 32, ROM 32 and gate array 34 and a bare chip of a resistor 35, capacitor 36, oscillator 37 and connector 38 respectively on the non-alkaline glass substrate 1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LCD device using a polycrystalline silicon thin film TFT, and more particularly to an LCD device in which a CPU circuit and an LCD circuit are integrally formed on an alkali-free glass substrate.

[0002]

2. Description of the Related Art As shown in FIG. 3, a conventional LCD device has a TF on a quartz substrate 101 having a heat resistance of 1200.degree.
The metal layer 102 of the drain and source wiring pattern of T, the power source and the ground wiring pattern is formed by the sputtering method (amorphous thin film formation), and the polycrystalline silicon layer 3 to be the source and drain regions is formed by CVD (Chemical Vapor).
Deposition: chemical vapor deposition method),
Impurities of boron and phosphorus are implanted to form a P + layer and an n + layer, a polycrystalline silicon layer 4 serving as an active layer is formed on the P + layer and the n + layer by a CVD method, and a laser annealing process (recrystallization process) is performed. Then, the SiO2 layer 5 of the gate insulating film is formed and the metal layer 6 of the gate electrode is formed.

After that, the quartz substrate 117 on which the color filter 15 is formed via the ITO film 16 on the opposite surface and the above-mentioned quartz substrate 101 are bonded to each other to inject the LCD 14, and the deflection films 13 and 18 are attached to the quartz substrates 101 and 117. Upholstery, TF
The T array and the driver for driving the TFT are simply formed of polycrystalline silicon.

[0004]

The conventional LCD device has the following problems.
Only the TFT array and the driver for driving the TFT are made of polycrystalline silicon.

Therefore, an object of the present invention is to provide an LCD circuit and a C
An object is to provide a CPU integrated LCD device having a PU circuit mounted on a non-alkali glass substrate and a method for manufacturing the same.

[0006]

In order to solve the above problems, in a CPU integrated LCD device of the present invention, a TFT array and a TFT driving driver are formed by using polycrystalline silicon on a non-alkali glass substrate. An LCD circuit and a CPU circuit in which a bare chip for a CPU, a RAM, a ROM, a gate array and a bare chip for a resistor, a capacitor, an oscillator, and a connector are formed on the alkali-free glass substrate, respectively. It is characterized in that each connection wiring is provided between them.

In order to solve the above-mentioned problems, C of the present invention is used.
A method of manufacturing a PU-integrated LCD device includes a TFT array and a TF using polycrystalline silicon on a non-alkali glass substrate.
An LCD circuit is formed by a T drive driver, and a CPU,
A RAM, a ROM, a bare chip of a gate array, and a CPU circuit formed of a bare chip of a resistor, a capacitor, an oscillator, and a connector are conductively adhered to the alkali-free glass substrate, and the LCD circuit and the CPU circuit are respectively sputtered. It is characterized in that wiring is connected, and each bare chip is wire-bonded to perform resin coating.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a CPU integrated LCD device according to an embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a plan view showing a CPU integrated LCD device according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a CPU integrated LCD device according to an embodiment of the present invention.

A CPU integrated LC according to an embodiment of the present invention
As shown in FIG. 1, the D device is a non-alkali glass substrate 1
TFT array 21 and TF using polycrystalline silicon on top
An LCD circuit in which a TFT driving driver having a T source driver 22 and a TFT gate driver 23 is formed, and a CPU 31, a RAM 32, and a R on a non-alkali glass substrate 1.
OM32, bare chip of gate array 34, and resistor 3
5, a capacitor 36, an oscillator 37, and a CPU circuit in which bare chips of a connector 38 are respectively formed.

Next, a method of manufacturing a CPU integrated LCD device according to an embodiment of the present invention will be described with reference to the drawings.

Next, as shown in FIGS. 1 and 2, a method of manufacturing a CPU-integrated LCD device according to an embodiment of the present invention, a TFT array 21 is formed on a non-alkali glass substrate 1 having a heat resistant temperature of 600.degree. Drain and source wiring and CPU
The aluminum layer 2 which becomes the Y direction connection wiring pattern of the circuit is formed by the sputtering method, and the polycrystalline silicon layer 3 which becomes the source and drain regions is formed by the LPCVD method (Low Pressure).
e Chemical Vapor Deposition
n: A crystalline silicon film obtained by decomposing gas under reduced pressure (vacuum) of about 600 ° C. and several tens of mTorr is grown. )
Formed by implanting impurity ions of boron and phosphorus,
A + layer and an n + layer are formed, a polycrystalline silicon layer 4 to be an active layer is formed on the P + layer and the n + layer by the LPCVD method, and laser annealing is performed to activate the SiO2 layer to be a gate insulating film. 5 is formed.

Therefore, the aluminum layer 6 of the gate electrode 6, the aluminum wiring 7 in the Y direction, the CPU 31, the RAM 32, and the ROM 3
2, the bare chip of the gate array 34 and the QFP (Qua
A pad 8 for mounting a dFlat Package IC, a pad 9 for connecting a lead, and a pad 8 for mounting a bare chip of a resistor 35, a capacitor 36, an oscillator 37, and a connector 38 are formed.

Further, the alkali-free glass substrate 1 on the opposite side
7, the color filter 15 is formed through the ITO layer 16, and the non-alkali glass substrate 1 is bonded to the color filter L.
The CD 14 is press-fitted, the bare chip 11 or the QFP, the resistor 35, the capacitor 36, the oscillator 37, and the connector 38 are fixed with a conductive adhesive, the bare chip 11 is bonded with the aluminum wire 10 and coated with the resin 12, and the deflection film 13 is formed. , 18 are non-alkali glass substrates 1, 1
Stick to 7.

[0016]

As described above, according to the CPU integrated LCD device and the manufacturing method thereof according to the embodiment of the present invention, the LCD circuit and the CPU circuit can be mounted by using the inexpensive alkali-free glass substrate. There is an effect that a thin and inexpensive device can be realized.

[Brief description of drawings]

FIG. 1 is a plan view showing a CPU integrated LCD device according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a CPU integrated LCD device according to an embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a conventional LCD device.

[Explanation of symbols]

 1,17 Alkali-free glass substrate 2,6 LCD circuit (aluminum layer) 3,4 Polycrystalline silicon layer 5 Polycrystalline silicon layer (SiO2 layer) 7 Connection wiring (Y direction aluminum wiring) 8,9 Connection wiring (pad) ) 10 wiring for connection (aluminum wire) 11 bare chip 12 resin 13, 18 LCD circuit (deflection film) 14 LCD circuit (LCD) 15 LCD circuit (color filter) 16 LCD circuit (ITO film)

Claims (2)

[Claims] 1. An LCD circuit in which a TFT array and a TFT driving driver are formed by using polycrystalline silicon on an alkali-free glass substrate, and C on the alkali-free glass substrate.
PU, RAM, ROM, a bare chip of a gate array and a CPU circuit in which a bare chip of a resistor, a capacitor, an oscillator and a connector are respectively formed, and wiring for each connection is provided between the CPU circuit and the LCD circuit. A CPU-integrated LCD device characterized by: 2. A TFT array and a TFT driving driver using polycrystalline silicon on a non-alkali glass substrate.
The CD circuit is formed, and the CPU circuit formed by the bare chip of the CPU, the RAM, the ROM, the gate array and the bare chip of the resistor, the capacitor, the oscillator, and the connector is conductively adhered to the alkali-free glass substrate, and the LC circuit is formed.
A CPU characterized in that the D circuit and the CPU circuit are connected to each other by a sputtering method, and the bare chips are wire-bonded to perform resin coating.
Method of manufacturing integrated LCD device.