JPH0819887A - Method and device for optical machining - Google Patents

Method and device for optical machining

Info

Publication number
JPH0819887A
JPH0819887A JP6150996A JP15099694A JPH0819887A JP H0819887 A JPH0819887 A JP H0819887A JP 6150996 A JP6150996 A JP 6150996A JP 15099694 A JP15099694 A JP 15099694A JP H0819887 A JPH0819887 A JP H0819887A
Authority
JP
Japan
Prior art keywords
laser beam
workpiece
intensity distribution
mask
optical processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6150996A
Other languages
Japanese (ja)
Inventor
Naoki Kimura
直樹 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP6150996A priority Critical patent/JPH0819887A/en
Publication of JPH0819887A publication Critical patent/JPH0819887A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain SQUID of good characteristic by changing intensity distribution of laser beam at the laser beam irradiating part on a object to be machined to form recessed part of various shape on a substrate. CONSTITUTION:On an optical path of the laser beam emitted from a laser beam source 1, an object 5 to be machined, which is placed in sequence of a mask 3, lens 4 and object 5 to be machined, is placed as inclined to the optical axis of laser beam at the prescribed angle. The inclined angle alpha is about 110 deg.. By irradiating with laser beam under this condition, a beam intensity of a laser beam irradiating part 6 is the strongest at one end A of the irradiating part 6 and is gradually weakened toward other end side B. The recessed part 7 formed at this time has a step at one place and slope shape from the step part to the other end. In this case, an angle made by a substrate filmed face part 8 and stepped face 9 is about 70 deg..

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、SQUID(Supercond
ucting-Quantum-Interference-Device) 等を製作する際
に用いられる基板等に種々断面形状の凹部を形成する光
加工方法及びその装置に関する。
BACKGROUND OF THE INVENTION The present invention relates to SQUID (Supercond
The present invention relates to an optical processing method and apparatus for forming recesses having various cross-sectional shapes on a substrate or the like used when manufacturing ucting-Quantum-Interference-Devices).

【0002】[0002]

【従来の技術】従来の金属又は金属間化合物超電導体
は、高価な液体ヘリウムを冷媒に用いる為利用分野が非
常に限られていた。しかし1986年以降、Y−Ba−Cu
−O系やBi−Ca−Sr−Cu−O系等の、廉価な液
体窒素を冷媒に使用できる複合酸化物が見出されるに至
り、その応用が種々の分野で検討されるようになった。
ところで、超電導現象を利用した素子として磁気測定等
に有用なSQUIDが知られている。このSQUID
は、超電導体間に極く薄い絶縁体又は常電導体を挟んで
構成されたものである。絶縁体を挟んだものをSIS接
合、常電導体を挟んだものをSNS接合と呼んでいる。
SQUIDを酸化物超電導体で形成する場合は、通常、
SNS接合が用いられる。このSNS接合は、図7に示
すような、凹部7を有する基板上に酸化物超電導体薄膜
12を数百nmの厚さに形成したもので、前記凹部7の段
差部分で、酸化物超電導体薄膜13が常電導性を示すこと
によりSNS接合が形成されている。
2. Description of the Related Art A conventional metal or intermetallic compound superconductor has a very limited field of use because it uses expensive liquid helium as a refrigerant. However, since 1986, Y-Ba-Cu
Since complex oxides such as —O type and Bi—Ca—Sr—Cu—O type that can use inexpensive liquid nitrogen as a refrigerant have been found, their applications have been studied in various fields.
By the way, SQUID, which is useful for magnetic measurement and the like, is known as an element utilizing the superconducting phenomenon. This SQUID
Is composed of an extremely thin insulator or a normal conductor sandwiched between superconductors. What sandwiches an insulator is called SIS junction, and what sandwiches a normal conductor is called SNS junction.
When the SQUID is formed of an oxide superconductor, it is usually
SNS junction is used. This SNS junction is formed by depositing an oxide superconductor thin film on a substrate having a recess 7 as shown in FIG.
12 is formed to have a thickness of several hundreds of nm, and the SNS junction is formed by the oxide superconductor thin film 13 having normal conductivity at the step portion of the recess 7.

【0003】前記基板の凹部は深さが 0.2μm程度で、
このような浅い凹部は、レーザー光線を照射することに
より瞬時に形成できる。前記凹部を形成する為の光加工
装置は、図6イに示すように、レーザー光源1、及びそ
の光軸2上にマスク3、レンズ4、被加工物5が順次配
置されてなるものである。ここで光軸とはレーザー光源
から発射されたレーザー光の進行方向に平行な軸を意味
する。従来、前記光源1から発射されるレーザー光線は
被加工物5上のレーザー光線照射部6(図6ハ参照)に
一様な強さで照射されていた。レーザー光線を用いた時
のエッチングレートは、図8に示すようにレーザー光線
のエネルギー密度により一義的に決まる。従って、一様
な強度で照射されたレーザー光線照射部6には、図6ロ
に示すように、段差が2箇所の凹部7が形成される。基
板に凹部を形成するにはウエットエッチング法等も適用
できるが、形成速度の点で光加工法が断然優位であっ
た。
The recess of the substrate has a depth of about 0.2 μm,
Such a shallow recess can be instantly formed by irradiating a laser beam. As shown in FIG. 6A, the optical processing apparatus for forming the concave portion comprises a laser light source 1 and a mask 3, a lens 4, and a workpiece 5 which are sequentially arranged on an optical axis 2 thereof. . Here, the optical axis means an axis parallel to the traveling direction of the laser light emitted from the laser light source. Conventionally, the laser beam emitted from the light source 1 has been applied to the laser beam application section 6 (see FIG. 6C) on the workpiece 5 with uniform intensity. The etching rate when a laser beam is used is uniquely determined by the energy density of the laser beam as shown in FIG. Therefore, as shown in FIG. 6B, the laser beam irradiation unit 6 irradiated with a uniform intensity is provided with the recess 7 having two steps. Although a wet etching method or the like can be applied to form the concave portion on the substrate, the optical processing method is by far superior in terms of formation speed.

【0004】[0004]

【発明が解決しようとする課題】前記図7に示したSN
S接合部を持つジョセフソン素子は、ノイズが多く、又
Ic等にバラツキが大きかった。この原因を調査したと
ころ、SNS接合部の形状、つまり常電導体を形成する
凹部に段差が2箇所ある為であることが判った。そこ
で、片側にのみ段差が形成され、他側に向け緩やかなス
ロープからなる凹部が提案された。しかし、このような
形状の凹部は、従来の光加工方法では形成することがで
きなかった。本発明は、基板に種々形状の凹部、特に段
差が1箇所の凹部を形成する光加工方法、及びその装置
を提供することを目的とする。
Problems to be Solved by the Invention The SN shown in FIG.
The Josephson element having the S junction had a lot of noise and had a large variation in Ic and the like. As a result of investigating the cause, it was found that there were two steps in the shape of the SNS joint, that is, in the recess forming the normal conductor. Therefore, a recess having a step formed only on one side and a gentle slope toward the other side has been proposed. However, the recess having such a shape could not be formed by the conventional optical processing method. An object of the present invention is to provide an optical processing method for forming concave portions of various shapes on a substrate, particularly a concave portion having one step, and an apparatus therefor.

【0005】[0005]

【課題を解決するための手段】請求項1の発明は、レー
ザー光線を照射して被加工物に凹部を形成する方法にお
いて、被加工物上のレーザー光線照射部のレーザー光線
の強度分布を変化させることを特徴とする光加工方法で
ある。
According to a first aspect of the present invention, there is provided a method of irradiating a laser beam to form a recess in a workpiece, wherein the intensity distribution of the laser beam at the laser beam irradiation portion on the workpiece is changed. It is a characteristic optical processing method.

【0006】この発明において、レーザー光線には、出
力の大きいエキシマレーザー等が適用される。この発明
にて加工する被加工物としては、主にSQUID等に使
用される基板を挙げることができる。この種の基板とし
ては、MgO、SrTiO3、LaAlO3 、ZrO
2 、ペロブスカイト構造材等の単結晶基板がある。又単
結晶基板以外でも、例えば、成膜面に適切なバッファ層
を形成した多結晶のSi基板も使用できる。上述のよう
な基板を用いる場合、成膜面は、酸化物超電導体をc軸
配向させる為に(100) 面を用いる。
In the present invention, an excimer laser having a large output is applied to the laser beam. Substrates mainly used for SQUID and the like can be cited as examples of the workpiece to be processed in the present invention. Examples of this type of substrate include MgO, SrTiO 3 , LaAlO 3 , and ZrO.
2. There are single crystal substrates such as perovskite structure materials. Besides the single crystal substrate, for example, a polycrystalline Si substrate having an appropriate buffer layer formed on the film forming surface can be used. When the substrate as described above is used, the (100) plane is used as the film formation surface in order to orient the oxide superconductor in the c-axis.

【0007】請求項2の発明は、レーザー光線照射部の
レーザー光線の強度分布が一端から他端に向けて徐々に
弱くなるように変化させることを特徴とする請求項1記
載の光加工方法である。この発明によれば、一端に段差
が形成され、他端に向けて緩やかなスロープの凹部が形
成される。基板の成膜面と段差面とのなす角度θ(図1
ロ参照)は90度を超える角度から10度程度まで広範囲で
ある。
The invention according to claim 2 is the optical processing method according to claim 1, wherein the intensity distribution of the laser beam of the laser beam irradiating part is changed so as to gradually weaken from one end to the other end. According to this invention, a step is formed at one end, and a concave portion having a gentle slope is formed toward the other end. The angle θ between the film-forming surface of the substrate and the step surface (see FIG.
(See (b)) is a wide range from 90 degrees to about 10 degrees.

【0008】請求項3の発明は、請求項1及び請求項2
の発明方法を実施する装置であり、その構成は、レーザ
ー光源、及びその光軸上にマスク、レンズ、被加工物を
順次配置した光加工装置において、被加工物上のレーザ
ー光線照射部のレーザー光線の強度分布を変化させる機
構が具備されていることを特徴とする光加工装置であ
る。
The invention of claim 3 relates to claim 1 and claim 2.
Is a device for carrying out the method of the invention, the structure of which is a laser light source, and an optical processing device in which a mask, a lens, and a workpiece are sequentially arranged on the optical axis thereof, in which a laser beam of a laser beam irradiation unit on the workpiece is The optical processing apparatus is provided with a mechanism for changing the intensity distribution.

【0009】請求項4の発明は、被加工物上のレーザー
光線照射部のレーザー光線の強度分布を変化させる機構
が、被加工物上のレーザー光線照射部を光軸に対して傾
斜させ得る被加工物保持器であることを特徴とする光加
工装置である。この発明において、被加工物上のレーザ
ー光線照射部の光軸に対する傾斜角度αを調整すること
により、成膜面と段差面とのなす角度θを、90度を超え
る角度から10度未満の角度にまで任意に形成できる。通
常は、10〜70度、又は20〜60度の範囲に変化させる。被
加工物保持器には、1軸方向にのみ傾斜可能な保持器が
使用される。
According to a fourth aspect of the present invention, the mechanism for changing the intensity distribution of the laser beam of the laser beam irradiating portion on the workpiece can hold the workpiece such that the laser beam irradiating portion on the workpiece can be inclined with respect to the optical axis. An optical processing device characterized by being a container. In this invention, by adjusting the inclination angle α with respect to the optical axis of the laser beam irradiation portion on the workpiece, the angle θ formed by the film-forming surface and the step surface is changed from an angle of more than 90 degrees to an angle of less than 10 degrees. Can be formed arbitrarily. Usually, it is changed in the range of 10 to 70 degrees, or 20 to 60 degrees. A holder that can be tilted only in one axis direction is used as the workpiece holder.

【0010】請求項5の発明は、被加工物上のレーザー
光線照射部のレーザー光線の強度分布を変化させる機構
が、レーザー光線を通す開口部の開口端面が局部的に光
軸方向に突出し又は窪んでいることを特徴とする光加工
装置である。この発明において、マスクには、例えば、
ステンレス板に開口部を設け、このマスクを局部的に変
形させたマスク、又は開口部の奥行(図3イ中のd)即
ち内周面の厚みを局部的に変えたマスク等が適用され
る。
According to a fifth aspect of the present invention, in the mechanism for changing the intensity distribution of the laser beam at the laser beam irradiating portion on the workpiece, the opening end face of the opening through which the laser beam passes locally projects or is recessed in the optical axis direction. It is an optical processing device characterized by the above. In the present invention, the mask includes, for example,
A mask in which an opening is provided in a stainless plate and this mask is locally deformed, or a depth of the opening (d in FIG. 3A), that is, a mask in which the thickness of the inner peripheral surface is locally changed is applied. .

【0011】請求項6の発明は、被加工物上のレーザー
光線照射部のレーザー光線の強度分布を変化させる機構
が、フィルターであることを特徴とする光加工装置であ
る。この発明において、フィルターにはステンレス製金
網、カラーフィルター等が用いられる。フィルターは光
束を径方向に局部的に遮蔽し得る任意の位置に配置でき
る。例えば、マスク開口部の一方の側の一部を覆うよう
に、マスクの一方の面に重ねて設ける。
According to a sixth aspect of the present invention, there is provided an optical processing apparatus, wherein the mechanism for changing the intensity distribution of the laser beam at the laser beam irradiating portion on the workpiece is a filter. In the present invention, a stainless wire mesh, a color filter or the like is used as the filter. The filter can be arranged at any position that can locally block the light beam in the radial direction. For example, it is provided so as to overlap with one surface of the mask so as to cover a part of one side of the mask opening.

【0012】[0012]

【作用】請求項1の発明は、レーザー光線を照射して被
加工物に凹部を形成する方法において、被加工物上のレ
ーザー光線照射部のレーザー光線の強度分布を変化させ
るので、段差が1箇所の凹部等種々形状の凹部を形成で
きる。レーザー光線照射部のレーザー光線の強度分布が
一端から他端に向けて徐々に弱くなるように変化させる
ことにより、一端に段差が形成され、他端に向けて緩や
かなスロープの凹部が形成できる。
According to the invention of claim 1, in the method of irradiating a laser beam to form a recess in a workpiece, since the intensity distribution of the laser beam in the laser beam irradiation portion on the workpiece is changed, the recess having one step is formed. It is possible to form recesses having various shapes such as. By changing the intensity distribution of the laser beam of the laser beam irradiation unit so as to gradually weaken from one end to the other end, a step is formed at one end and a concave portion having a gentle slope can be formed toward the other end.

【0013】請求項3の発明は、レーザー光源、及びそ
の光軸上にマスク、レンズ、被加工物を順次配置した光
加工装置において、被加工物上のレーザー光線照射部の
レーザー光線の強度分布を変化させる機構が具備された
装置である。従って被加工物上のレーザー光線照射部に
段差が1箇所の凹部等、種々形状の凹部を形成すること
ができる。レーザー光線照射部のレーザー光線の強度分
布を変化させる機構は、被加工物を光軸に対して傾斜
させる被加工物保持器、レーザー光線を通す開口部の
開口端面が局部的に光軸方向に突出し又は窪んでいるマ
スク、光束を局部的に遮断する、或いは強度を弱める
フィルター等である。これら機構は、現状の光加工装置
を部分改造することにより容易に実現できる。
According to a third aspect of the present invention, in a laser beam source and an optical processing apparatus in which a mask, a lens, and a workpiece are sequentially arranged on the optical axis thereof, the intensity distribution of the laser beam at the laser beam irradiation portion on the workpiece is changed. It is a device equipped with a mechanism for making it. Therefore, it is possible to form concave portions of various shapes, such as a concave portion having one step, on the laser beam irradiation portion on the workpiece. The mechanism for changing the intensity distribution of the laser beam of the laser beam irradiation unit is a workpiece holder that tilts the workpiece with respect to the optical axis, and the opening end face of the opening through which the laser beam passes locally protrudes or dimples in the optical axis direction. The mask is a mask, a filter for locally blocking the light flux, or a filter for weakening the intensity. These mechanisms can be easily realized by partially modifying the existing optical processing device.

【0014】[0014]

【実施例】【Example】

(実施例1)図1は本発明の第1の実施例を示す要部説
明図である。図1イに示すように、レーザー光源1から
発射されるレーザー光線の光軸2上に、マスク3、レン
ズ4、被加工物5が順次配置されている。前記被加工物
5はレーザー光線の光軸2に対して所定角度傾斜して配
置されている。前記傾斜角度αは 110度である。この状
態でレーザー光線を照射すると、図1ハに示すようにレ
ーザー光線照射部6の光強度は、この照射部6の一端A
が最も強く、他端B側に向かって徐々に弱くなる。この
とき形成される凹部7は、図1ロに示すように、段差が
1箇所で、段差底部から他端に向け緩やかなスロープの
形状のものとなる。この場合、基板成膜面8と段差面9
のなす角度θは70度になる。
(Embodiment 1) FIG. 1 is an explanatory view of essential parts showing a first embodiment of the present invention. As shown in FIG. 1A, a mask 3, a lens 4, and a workpiece 5 are sequentially arranged on an optical axis 2 of a laser beam emitted from a laser light source 1. The workpiece 5 is arranged so as to be inclined at a predetermined angle with respect to the optical axis 2 of the laser beam. The inclination angle α is 110 degrees. When the laser beam is irradiated in this state, the light intensity of the laser beam irradiation unit 6 becomes one end A of the irradiation unit 6 as shown in FIG.
Is the strongest, and gradually weakens toward the other end B side. As shown in FIG. 1B, the recess 7 formed at this time has one step and has a gentle slope shape from the bottom of the step toward the other end. In this case, the substrate film-forming surface 8 and the step surface 9
The angle θ formed by is 70 degrees.

【0015】(実施例2)図2は本発明の第2の実施例
を示す要部説明図である。図2イに示すように、レーザ
ー光源1から発射されるレーザー光線の光軸2上に、マ
スク3、レンズ4、被加工物5が順次配置されている。
前記マスク3の一端側はレーザー光源1側に曲げられて
おり、この結果レーザー光線を通す開口部10の開口端面
が局部的にレーザー光源1側に窪んでいる。このとき形
成される凹部7は、図2ロに示すように、段差は1箇所
で、段差底部から他端に向け緩やかなスロープの形状と
なる。この場合、基板成膜面8と段差面9とのなす角度
θは90度になる。
(Embodiment 2) FIG. 2 is an explanatory view of essential parts showing a second embodiment of the present invention. As shown in FIG. 2A, the mask 3, the lens 4, and the workpiece 5 are sequentially arranged on the optical axis 2 of the laser beam emitted from the laser light source 1.
One end side of the mask 3 is bent toward the laser light source 1 side, and as a result, the opening end face of the opening 10 through which the laser beam passes is locally depressed toward the laser light source 1 side. As shown in FIG. 2B, the recess 7 formed at this time has one step and has a gentle slope shape from the bottom of the step to the other end. In this case, the angle θ between the substrate film forming surface 8 and the step surface 9 is 90 degrees.

【0016】(実施例3)図3は本発明の第3の実施例
を示す要部説明図である。図3イに示すように、レーザ
ー光源1から発射されるレーザー光線の光軸2上に、マ
スク3、レンズ4、被加工物5が順次配置されている。
前記マスク3のレーザー光線を通す開口部10の奥行きd
が開口部の一側縁から他側縁に向かって徐々に大となっ
ている。このとき形成される凹部の形状は、図3ロに示
すように、実施例2のものと同じになる。
(Embodiment 3) FIG. 3 is an explanatory view of essential parts showing a third embodiment of the present invention. As shown in FIG. 3A, the mask 3, the lens 4, and the workpiece 5 are sequentially arranged on the optical axis 2 of the laser beam emitted from the laser light source 1.
Depth d of the opening 10 through which the laser beam of the mask 3 passes
Is gradually increased from one side edge to the other side edge. The shape of the recess formed at this time is the same as that of the second embodiment, as shown in FIG.

【0017】(実施例4)図4は本発明の第4の実施例
を示す要部説明図である。図4イに示すように、レーザ
ー光源1から発射されるレーザー光線の光軸2上に、マ
スク3、レンズ4、被加工物5が順次配置されている。
前記マスク3の一方の面には開口部10の図中下部側の一
部を覆うように2枚のフィルター11a 、11b が配置され
ている。フィルター11a は、フィルター11b が開口部10
を覆う範囲の一部を覆うように配置されている。このよ
うに、フィルター11を高さを変えて2枚配置したのは、
凹部のスロープをより緩やかに形成する為である。図5
は図4イのフィルターとマスクをレーザー光源側から見
た正面図である。フィルター11a 、11b はマスク3の開
口部10の図中下側を一部遮断して配置されている。この
実施例では、フィルターはマスク3の前(図4イ中左
側)にあり、マスクから 100μm以上離して設置されて
いる。この為ピント位置からずれることになり、フィル
ターがあらわに、加工面に像を結ぶことはない。尚、フ
ィルターはマスク3の後ろに設置されることもあり得
る。このとき形成される凹部の形状は、図4ロに示すよ
うに、実施例2のものと同じになる。
(Embodiment 4) FIG. 4 is an explanatory view of the essential parts of a fourth embodiment of the present invention. As shown in FIG. 4A, the mask 3, the lens 4, and the workpiece 5 are sequentially arranged on the optical axis 2 of the laser beam emitted from the laser light source 1.
Two filters 11a and 11b are arranged on one surface of the mask 3 so as to cover a part of the opening 10 on the lower side in the drawing. Filter 11a has filter 11b with opening 10
It is arranged so as to cover a part of the range that covers. In this way, the two filters 11 arranged at different heights are
This is because the slope of the recess is formed more gently. Figure 5
[Fig. 4] is a front view of the filter and mask of Fig. 4B seen from the laser light source side. The filters 11a and 11b are arranged so as to partially block the lower side of the opening 10 of the mask 3 in the figure. In this embodiment, the filter is located in front of the mask 3 (on the left side in FIG. 4A) and is installed at a distance of 100 μm or more from the mask. For this reason, the image is deviated from the focus position, and the image is not formed on the processed surface by the filter. The filter may be installed behind the mask 3. The shape of the recess formed at this time is the same as that of the second embodiment, as shown in FIG.

【0018】前記4種の光加工装置を用いて、12mm角、
厚さ 0.5mmのMgO(100) 基板に段差が1箇所の凹部を
形成した。レーザー光源には、波長248nm のKrFエキ
シマレーザーを用いた。凹部を形成した各々の基板上に
スパッタリング法により、YBa2 Cu3 x の薄膜を
C軸配向させて 300nm厚さに形成した。得られた成膜体
をSQUIDに加工して、直流通電における磁束分解能
及び磁場分解能を測定した。比較の為、従来の光加工装
置を用いて段差が2箇所ある凹部を設けたMgO(100)
基板を作製し、この基板上に、前記と同じ条件でYBa
2 Cu3 x の薄膜を形成しSQUIDに加工したもの
(比較例品)についても同様の測定を行った。結果を表
1に示す。
Using the above-mentioned four types of optical processing equipment, 12 mm square,
A recess having one step was formed on a 0.5 mm thick MgO (100) substrate. A KrF excimer laser with a wavelength of 248 nm was used as the laser light source. A thin film of YBa 2 Cu 3 O x was oriented on the C axis by sputtering to form a 300 nm-thick film on each substrate in which the concave portions were formed. The obtained film-formed body was processed into SQUID, and the magnetic flux resolution and magnetic field resolution in direct current conduction were measured. For comparison, a conventional optical processing device was used to form a MgO (100) recess having two steps.
A substrate is prepared, and YBa is formed on the substrate under the same conditions as described above.
The same measurement was performed on the SQUID processed thin film of 2 Cu 3 O x (comparative example product). The results are shown in Table 1.

【0019】[0019]

【表1】 [Table 1]

【0020】表1より明らかなように、実施例1〜4の
ものはいずれも、磁束分解能及び磁場分解能に優れたも
のであった。これに対し、比較例品は、磁束分解能及び
磁場分解能が悪かった。これは、従来の光加工装置を用
いて基板に凹部を形成した為、凹部に段差が2箇所形成
され、SQUID接合部の特性が低下した為である。
As is clear from Table 1, all of Examples 1 to 4 were excellent in magnetic flux resolution and magnetic field resolution. On the other hand, the comparative example product was poor in magnetic flux resolution and magnetic field resolution. This is because the conventional optical processing apparatus was used to form the concave portion in the substrate, and two steps were formed in the concave portion, which deteriorated the characteristics of the SQUID junction.

【0021】以上、SQUID用のMgO基板に、段差
が1箇所で他端に向け緩やかなスロープの凹部を形成す
る場合について説明したが、本発明は、チタン酸ストロ
ンチウム等他の種類の基板に適用しても、又他の形状の
凹部を形成する場合等に適用しても同様の効果が得られ
る。
The case has been described above in which the MgO substrate for SQUID is provided with a single step and a recess having a gentle slope toward the other end. However, the present invention is applicable to other types of substrates such as strontium titanate. However, the same effect can be obtained by applying it to the case of forming a recess of another shape.

【0022】[0022]

【効果】以上述べたように、本発明によれば、基板に、
段差が1箇所の凹部等、種々の形状の凹部を形成するこ
とができ、SQUID用基板の製造等に適用して顕著な
効果を奏する。
As described above, according to the present invention,
It is possible to form recesses of various shapes, such as a recess having one step, and it is possible to obtain a remarkable effect when applied to the manufacture of a SQUID substrate and the like.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例を示す要部説明図であ
る。
FIG. 1 is an explanatory view of a main part showing a first embodiment of the present invention.

【図2】本発明の第2の実施例を示す要部説明図であ
る。
FIG. 2 is an explanatory view of a main part showing a second embodiment of the present invention.

【図3】本発明の第3の実施例を示す要部説明図であ
る。
FIG. 3 is an explanatory view of main parts showing a third embodiment of the present invention.

【図4】本発明の第4の実施例を示す要部説明図であ
る。
FIG. 4 is an explanatory view of a main part showing a fourth embodiment of the present invention.

【図5】図4イのフィルターとマスクをレーザー光源側
から見た正面図である。
5 is a front view of the filter and mask of FIG. 4B as viewed from the laser light source side.

【図6】従来の光加工装置の要部説明図である。FIG. 6 is an explanatory view of a main part of a conventional optical processing device.

【図7】SQUIDの態様を示す平面図である。FIG. 7 is a plan view showing an aspect of SQUID.

【図8】レーザー光線を用いた光加工におけるエネルギ
ー密度とエッチングレートの関係図である。
FIG. 8 is a relationship diagram between an energy density and an etching rate in optical processing using a laser beam.

【符号の説明】[Explanation of symbols]

1……レーザー光源 2……レーザー光線の光軸 3……マスク 4……レンズ 5……被加工物 6……レーザー光線照射部 7……基板の凹部 8……基板成膜面 9……凹部の段差面 10……マスクのレーザー光線を通す開口部 11……フィルター 12……酸化物超電導体薄膜 13……凹部内の酸化物超電導体薄膜 1 ... Laser light source 2 ... Optical axis of laser beam 3 ... Mask 4 ... Lens 5 ... Workpiece 6 ... Laser beam irradiation area 7 ... Substrate recess 8 ... Substrate film formation surface 9 ... Recess Step surface 10 …… Aperture for passing laser beam of mask 11 …… Filter 12 …… Oxide superconductor thin film 13 …… Oxide superconductor thin film in recess

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 39/24 ZAA F ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical display location H01L 39/24 ZAA F

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 レーザー光線を照射して被加工物に凹部
を形成する方法において、被加工物上のレーザー光線照
射部のレーザー光線の強度分布を変化させることを特徴
とする光加工方法。
1. A method of forming a recess in a workpiece by irradiating a laser beam, wherein the intensity distribution of the laser beam at the laser beam irradiation portion on the workpiece is changed.
【請求項2】 レーザー光線照射部のレーザー光線の強
度分布が一端から他端に向けて徐々に弱くなるように変
化させることを特徴とする請求項1記載の光加工方法。
2. The optical processing method according to claim 1, wherein the intensity distribution of the laser beam at the laser beam irradiation section is changed so as to gradually weaken from one end to the other end.
【請求項3】 レーザー光源、及びその光軸上にマス
ク、レンズ、被加工物を順次配置した光加工装置におい
て、被加工物上のレーザー光線照射部のレーザー光線の
強度分布を変化させる機構が具備されていることを特徴
とする光加工装置。
3. A laser light source, and an optical processing apparatus in which a mask, a lens, and a workpiece are sequentially arranged on the optical axis thereof, and a mechanism for changing the intensity distribution of the laser beam of a laser beam irradiation section on the workpiece is provided. An optical processing device characterized in that
【請求項4】 被加工物上のレーザー光線照射部のレー
ザー光線の強度分布を変化させる機構が、被加工物上の
レーザー光線照射部を光軸に対して傾斜させ得る被加工
物保持器であることを特徴とする請求項3記載の光加工
装置。
4. The mechanism for changing the intensity distribution of the laser beam of the laser beam irradiation section on the workpiece is a workpiece holder capable of inclining the laser beam irradiation section on the workpiece with respect to the optical axis. The optical processing device according to claim 3, which is characterized in that.
【請求項5】 被加工物上のレーザー光線照射部のレー
ザー光線の強度分布を変化させる機構が、レーザー光線
を通す開口部の開口端面が局部的に光軸方向に突出し又
は窪んでいることを特徴とする請求項3記載の光加工装
置。
5. A mechanism for changing the intensity distribution of a laser beam at a laser beam irradiating portion on a workpiece is characterized in that an opening end face of an opening through which the laser beam passes is locally projected or recessed in the optical axis direction. The optical processing device according to claim 3.
【請求項6】 被加工物上のレーザー光線照射部のレー
ザー光線の強度分布を変化させる機構が、フィルターで
あることを特徴とする請求項3記載の光加工装置。
6. The optical processing apparatus according to claim 3, wherein the mechanism for changing the intensity distribution of the laser beam at the laser beam irradiation section on the workpiece is a filter.
JP6150996A 1994-07-01 1994-07-01 Method and device for optical machining Pending JPH0819887A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6150996A JPH0819887A (en) 1994-07-01 1994-07-01 Method and device for optical machining

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6150996A JPH0819887A (en) 1994-07-01 1994-07-01 Method and device for optical machining

Publications (1)

Publication Number Publication Date
JPH0819887A true JPH0819887A (en) 1996-01-23

Family

ID=15509010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6150996A Pending JPH0819887A (en) 1994-07-01 1994-07-01 Method and device for optical machining

Country Status (1)

Country Link
JP (1) JPH0819887A (en)

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