JPH08180821A - Electron beam apparauts - Google Patents

Electron beam apparauts

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Publication number
JPH08180821A
JPH08180821A JP15796295A JP15796295A JPH08180821A JP H08180821 A JPH08180821 A JP H08180821A JP 15796295 A JP15796295 A JP 15796295A JP 15796295 A JP15796295 A JP 15796295A JP H08180821 A JPH08180821 A JP H08180821A
Authority
JP
Japan
Prior art keywords
electron
spacer
electrode
wiring
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15796295A
Other languages
Japanese (ja)
Other versions
JP3305166B2 (en
Inventor
Shinichi Kawate
Hideaki Mitsutake
Naohito Nakamura
Yoshihisa Sano
尚人 中村
英明 光武
義久 左納
信一 河手
Original Assignee
Canon Inc
キヤノン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP14463694 priority Critical
Priority to JP6-144636 priority
Priority to JP26521794 priority
Priority to JP6-265217 priority
Application filed by Canon Inc, キヤノン株式会社 filed Critical Canon Inc
Priority to JP15796295A priority patent/JP3305166B2/en
Publication of JPH08180821A publication Critical patent/JPH08180821A/en
Application granted granted Critical
Publication of JP3305166B2 publication Critical patent/JP3305166B2/en
Priority claimed from US10/640,269 external-priority patent/USRE40103E1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/241Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
    • H01J9/242Spacers between faceplate and backplate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/028Mounting or supporting arrangements for flat panel cathode ray tubes, e.g. spacers particularly relating to electrodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/86Vessels; Containers; Vacuum locks
    • H01J29/864Spacers between faceplate and backplate of flat panel cathode ray tubes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00Cathode ray tubes; Electron beam tubes
    • H01J31/08Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123Flat display tubes
    • H01J31/125Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/18Assembling together the component parts of electrode systems
    • H01J9/185Assembling together the component parts of electrode systems of flat panel display devices, e.g. by using spacers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/316Cold cathodes having an electric field parallel to the surface thereof, e.g. thin film cathodes
    • H01J2201/3165Surface conduction emission type cathodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels
    • H01J2329/86Vessels
    • H01J2329/8625Spacing members
    • H01J2329/864Spacing members characterised by the material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels
    • H01J2329/86Vessels
    • H01J2329/8625Spacing members
    • H01J2329/8645Spacing members with coatings on the lateral surfaces thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels
    • H01J2329/86Vessels
    • H01J2329/8625Spacing members
    • H01J2329/865Connection of the spacing members to the substrates or electrodes
    • H01J2329/8655Conductive or resistive layers

Abstract

(57) [Summary] [Purpose] To prevent irradiation position deviation of an electron beam on a target surface that occurs when a spacer for maintaining a gap in the envelope is arranged in the envelope. [Structure] The electron source 11 provided with an electron-emitting device includes
A fluorescent film 18 that emits light when electrons collide with it, and a metal back 19 that is an electrode that controls the electrons emitted from the electron source 11 are arranged opposite to each other. Between the electron source 11 and the metal back 19, a spacer 20 having an atmospheric pressure resistant structure therebetween is arranged. The spacer 20 is formed by forming a semiconductive film 20b on the surface of the insulating member 20a, and the semiconductive film 20b is electrically connected to the electron source 11 and the metal back 19.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam apparatus and an image forming apparatus such as a display apparatus, which is an application of the electron beam apparatus. In particular, the atmospheric pressure applied to the envelope of the apparatus is supported from the inside of the envelope. The present invention relates to an electron beam apparatus and an image forming apparatus that are provided with a spacer inside the envelope.

[0002]

2. Description of the Related Art Conventionally, two types of electron-emitting devices are known, a hot cathode device and a cold cathode device. Among them, the cold cathode device is, for example, a surface conduction electron-emitting device, a field emission device (hereinafter abbreviated as “FE type”), a metal / insulating layer / metal type emission device (hereinafter abbreviated as “MIM type”), and the like. It has been known.

As the surface conduction electron-emitting device, for example, M. I. Elinson, Radio Eng.
Electron Phys. , 10, 1290, (1
965) and other examples described later are known.

The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs in a small-area thin film formed on a substrate by passing an electric current in parallel with the film surface. As the surface conduction electron-emitting device, the Elinso described above is used.
In addition to the one using the SnO 2 thin film of G.n, etc., the one using the Au thin film [G. Dittmer: "Thin Sol
id Films ", 9, 317 (1972)] or I
n 2 O 3 / SnO 2 thin film [M. Hartwe
ll and C.I. G. Fonstad: “IEEE
Trans. ED Conf. , 519 (197
5)] and a carbon thin film [Hiraki Araki et al .: Vacuum, Vol. 26, No. 1, p. 22 (1983)] and the like.

As a typical example of these surface conduction electron-emitting devices, FIG. Figure 3 shows a plan view of the device by Hartwell et al. In the figure, a conductive thin film 3004 made of a metal oxide is formed on a substrate 3001 in an H-shaped planar shape by sputtering. The conductive thin film 3004 is subjected to an energization process called energization forming described later to form an electron emitting portion 3005. In the figure, the interval L is 0.5 to 1 [mm], and W is 0.
It is set at 1 [mm]. For convenience of illustration, the electron emitting portion 3005 is shown in a rectangular shape in the center of the conductive thin film 3004, but this is a schematic one, and the actual position and shape of the electron emitting portion is faithfully expressed. It doesn't mean that.

M. In the above-described surface conduction electron-emitting device including the device by Hartwell et al., The electron-emitting portion 300 is obtained by performing an energization process called energization forming on the conductive thin film 3004 before the electron emission.
It was common to form 5. That is, the energization forming is performed by applying a constant DC voltage to both ends of the conductive thin film 3004 or a DC voltage that is boosted at a very slow rate of about 1 [V / min], for example,
The conductive thin film 3004 is locally destroyed, deformed, or denatured, and the electron emitting portion 300 is in an electrically high resistance state.
5 is to be formed. A crack occurs in a part of the conductive thin film 3004 which is locally destroyed, deformed or altered. Conductive thin film 3 after the energization forming
When an appropriate voltage is applied to 004, electrons are emitted near the crack.

An example of the FE type is, for example, the W. P. Dyke
& W. W. Dolan, "Field Emiss
Ion ", Advance in Electron
Physics, 8, 89 (1956) or C.I. A. Spindt, "Physical prop
erties of thin-film field
Emission cathodes with mo
lybdenum cones ”, J. Appl. Ph.
ys. , 47, 5248 (1976) and the like are known.

As a typical example of the FE type element structure, FIG. A. 3 shows a cross-sectional view of the device by Spindt et al. In the figure, reference numeral 3010 denotes a substrate, and 3011
Is an emitter wiring made of a conductive material, 3012 is an emitter cone, 3013 is an insulating layer, and 3014 is a gate electrode. In this element, an appropriate voltage is applied between the emitter cone 3012 and the gate electrode 3014 to cause field emission from the tip of the emitter cone 3012.

As another element structure of the FE type, as shown in FIG.
There is also an example in which the emitter and the gate electrode are arranged on the substrate substantially parallel to the substrate plane, instead of the laminated structure as in 7.

As an example of the MIM type, for example, C.I. A.
Mead, "Operation of tunnel-
Emission Devices ", J. Appl.
Phys. , 32, 646 (1961) and the like are known. FIG. 38 shows a typical example of the MIM type element configuration.
38 is a sectional view. In FIG. 38, 3020 is a substrate, 3021 is a lower electrode made of metal, and 3022 is a thickness 1
A thin insulating layer having a thickness of about 00 Å and an upper electrode 3023 made of a metal having a thickness of about 80 to 300 Å are provided. In the MIM type, electrons are emitted from the surface of the upper electrode 3023 by applying an appropriate voltage between the upper electrode 3023 and the lower electrode 3021.

The cold cathode device described above can obtain electron emission at a lower temperature than the hot cathode device, and thus does not require a heater for heating. Therefore, the structure is simpler than that of the hot cathode device, and a fine device can be manufactured. Even if a large number of elements are arranged on the substrate at a high density, problems such as heat melting of the substrate are unlikely to occur. Furthermore, since the hot cathode element operates by heating the heater, the response speed is slow,
In the case of a cold cathode device, there is also an advantage that the response speed is fast.

For this reason, various studies have been actively conducted on electron beam devices using cold cathode elements.

For example, the surface conduction electron-emitting device has an advantage that a large number of devices can be formed over a large area because it has a particularly simple structure and is easy to manufacture among cold cathode devices. Therefore, for example, JP-A-64-31 by the present applicant
As disclosed in Japanese Patent No. 332, a method for arranging and driving a large number of elements has been studied.

Regarding the electron beam apparatus using the surface conduction electron-emitting device, for example, an image forming apparatus such as an image display apparatus and an image recording apparatus, a charge beam source, and the like have been studied.

Particularly, as an application to an image display device, for example, the present applicant's US Pat. No. 5,066,883, JP-A-2-257551, and JP-A-4-2813.
As disclosed in Japanese Patent Publication No. 7, an image display device using a combination of a surface conduction electron-emitting device and a phosphor that emits light when irradiated with an electron beam has been studied. An image display device using a combination of a surface-conduction type emission device and a phosphor is expected to have better characteristics than other conventional image display devices. For example, it can be said that the liquid crystal display device, which has become widespread in recent years, is superior in that it requires no backlight because it is a self-luminous type and has a wide viewing angle.

A method of driving a large number of FE types in parallel is disclosed in, for example, US Pat. No. 4,904,895 by the present applicant. Further, as an example in which the FE type is applied to an image display device, for example, R.I. A flat panel display device reported by Meyer et al. Is known [R. Mey
er: "Recent Development"
Microtips Display at LET
I ", Tech. Digest of 4th In
t. Vacuum Microelectronics
Conf. , Nagahama, pp. 6-9 (19
91)].

An example in which a large number of MIM types are arranged and applied to an image display device is disclosed in, for example, Japanese Patent Laid-Open No. 3-5.
It is disclosed in Japanese Patent No. 5738.

[0018]

The electron beam apparatus such as the image forming apparatus described above includes an envelope for maintaining a vacuum atmosphere inside the apparatus, an electron source arranged in the envelope, It has a target irradiated with an electron beam emitted from an electron source, an acceleration electrode for accelerating the electron beam toward the target, etc., and further for supporting the atmospheric pressure applied to the envelope from the inside of the envelope. The spacer may be placed inside the envelope.

In particular, in the image forming apparatus such as the above-mentioned display device, there is a recent demand for a larger area of the image display surface and a thinner device. In order to achieve such a large area and thin structure, it seems that the arrangement of spacers inside the envelope is indispensable.

However, when the spacer is arranged in the envelope of the electron beam apparatus, there arises a problem that the irradiation position of the electron beam on the target surface deviates from the design value. This problem means, for example, when the electron beam device is the above-mentioned display device, the deviation of the irradiation position of the electron beam and the light emission shape on the phosphor surface from the design value. In particular, when an image forming member including R, G, and B color phosphors for a color image is used, a decrease in brightness and a color shift may occur in addition to the shift in the irradiation position of the electron beam. Further, this phenomenon particularly occurs near the spacer arranged between the electron source and the image forming member or in the peripheral portion of the image forming member.

Therefore, it is an object of the present invention to provide an electron beam apparatus in which the deviation of the irradiation position of the electron beam on the target surface is prevented. In particular, it is to prevent irradiation position shift of the electron beam on the target surface, which occurs when a spacer for maintaining a gap in the envelope of the electron beam apparatus is arranged in the envelope.

Further, particularly in the image forming apparatus among the electron beam apparatuses, to provide an image forming apparatus which prevents the irradiation position shift of the electron beam on the surface of the image forming member and forms a clear and reproducible image. The image display device using a light emitting member such as a phosphor among the image forming apparatus for the purpose of preventing the deviation of the irradiation position of the electron beam on the light emitting member surface from the designed value of the light emission spot shape and clear In order to provide an image display device that displays an image with good reproducibility, a color image display device using phosphors of R, G, and B as light-emitting members among the image display devices is described in detail below. The deviation of the irradiation position on the light emitting member surface from the design value of the light emission spot shape, the decrease in brightness, and the color deviation are prevented,
An object of the present invention is to provide an image display device that displays a full-color image that is clear and has good color reproducibility.

[0023]

To achieve the above object, an electron beam apparatus of the present invention comprises an electron source having an electron-emitting device, an electrode for controlling electrons emitted from the electron source,
In an electron beam apparatus having a target irradiated with electrons emitted from the electron source and a spacer arranged between the electron source and the electrode, the spacer has a semiconductive film on the surface, The semiconductive film is electrically connected to the electron source and the electrode.

A contact member may be provided at a contact portion between the spacer and each of the electron source and the electrode. The contact member has a function of mechanically fixing the spacer to each of the electron source and the electrode, and a function of electrically connecting the semiconductive film on the spacer surface to each of the electron source and the electrode. A first member composed of a member which also has a function of mechanically fixing the spacer to each of the electron source and the electrode; a semiconductive film on the surface of the spacer; and each of the electron source and the electrode. It may be configured by the second member having the electrical connection function of.

Further, the electron source may have a plurality of electron-emitting devices connected by wiring, and the semiconductive film may be electrically connected to the wiring and the electrode. In this case, the spacer is arranged between the wiring and the electrode, or the spacer is formed in a rectangular shape so that its longitudinal direction is parallel to the wiring, or the electrode is arranged on the target. It may be one. The wiring of the plurality of electron-emitting devices may be matrix wiring. The electrode may be an acceleration electrode that accelerates electrons emitted from the electron source.

Further, the electron beam apparatus of the present invention is irradiated with an electron source having an electron emitting element, an electrode for controlling electrons emitted from the electron source, and a diamond rod emitted from the electron source. In an electron beam apparatus having a target, a spacer arranged between at least two electrodes to which different potentials are applied, the spacer having a semiconductive film on a surface thereof, the spacer and the electrode And a semi-conductive film on the surface of the spacer is electrically connected to each of the electrodes. is there.

In this electron beam apparatus, the electron source has a plurality of electron-emitting devices connected by wiring, and one of the electrodes is the wiring, or one of the electrodes is a matrix wiring and one of the electrodes is one of the electrodes. May be a row-direction wiring or a column-direction wiring, and further, one of the electrodes may be an electrode arranged on the target, or an accelerating electrode for accelerating electrons emitted from the electron source. It may be one. Further, the abutting member is composed of a member having both a mechanical fixing function of the spacer and each of the electrodes and an electric connection function of the semiconductive film on the spacer surface and each of the electrodes. A first member having a mechanical fixing function between the spacer and each of the electrodes,
It may be composed of a second member having an electrical connection function between the semi-conductive film on the surface of the spacer and each of the electrodes.

In each of the electron beam devices, the semiconductive film has a surface resistance value of 10 5 [Ω / □] to 10 12 [Ω / □], and a plurality of the spacers are arranged. Further, the electron-emitting device may be a cold cathode device, a device having a conductive film including an electron-emitting portion between electrodes, or a surface conduction electron-emitting device.

Further, the electron beam apparatus of the present invention is also applied as an image forming apparatus for forming an image by irradiating the target with electrons emitted from the electron emitting element according to an input signal. In this case, the target may be a phosphor.

[0030]

As described above, in the electron beam apparatus of the present invention, the spacer having the semiconductive film formed on the surface is provided between the electron source and the electrode or between at least two electrodes to which different potentials are applied. The semi-conductive film is characterized by being electrically connected to the electron source and the electrode or the at least two electrodes. As a result, even if charged particles adhere to the surface of the spacer, the charged particles electrically neutralize a part of the current flowing through the semiconductive film and prevent the spacer from being charged. The orbit of the generated electron becomes stable. Since the charge to be prevented is generated on the surface of the spacer, it is sufficient for the spacer to have an antistatic function only on the surface portion.

Further, the contact of the spacer with other members is
For example, a mechanical member having both a mechanical fixing function and an electrical connecting function, or an abutting member composed of two types of members separately carrying out both the functions can be used to mechanically perform the above-mentioned electrical connection of the spacers. Bonding strength is maintained.

The semiconductive film has a surface resistance value of 10 5 in particular.
By setting it to 10 12 [Ω / □], it has a low resistance value that is sufficient to neutralize the charge on the spacer surface, and keeps the amount of leakage current that does not significantly increase the power consumption of the entire device. An electron beam device is realized. That is, a thin, large-area image forming apparatus can be obtained when applied to an image forming apparatus without impairing the low heat generation characteristic of the cold cathode type electron-emitting device.

Among the electron-emitting devices, the surface conduction electron-emitting device is particularly preferable. The surface conduction electron-emitting device has a simple structure and is simple to manufacture, and a large-area one can be easily manufactured. In recent years, particularly in a situation where an inexpensive image display device having a large screen is required, it is a cold cathode type electron-emitting device that is particularly suitable.

Further, according to the present invention, the electron-emitting devices are connected by a plurality of row-direction wirings and a plurality of column-direction wirings, respectively, whereby a simple matrix type electron in which a large number of electron-emitting devices are arranged in a matrix. It is suitable for an electron beam apparatus using a source. The above-mentioned simple matrix type electron source can select a large number of electron-emitting devices and control the amount of electron emission by giving an appropriate drive signal in the row direction and the column direction. It does not need to be added and can be easily configured on one substrate. In this case, the semiconductive film of the spacer is electrically connected to the row-direction wiring or the column-direction wiring, so that, for example, the semiconductive film is electrically connected to one wiring on the electron source side. Therefore, unnecessary electrical coupling between the wirings on the electron source is avoided.

In particular, by applying the electron beam apparatus of the present invention to an image forming apparatus that irradiates a target with electrons to form an image, the orbits of the electrons emitted from the electron-emitting devices are stabilized as described above. As a result, a good image is formed with no deviation in the light emitting position.

[0036]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described below.

(Structure and Manufacturing Method of Display Panel) First, the structure and manufacturing method of the display panel of the image display device to which the present invention is applied will be described with reference to specific examples.

FIG. 2 is a perspective view of the display panel, with a part of the panel cut away to show the internal structure.
FIG. 1 is a sectional view of a main part of the display panel shown in FIG. 2 (A-
It is a part of A'section).

In the drawing, 15 is a rear plate, 16 is a side wall,
Reference numeral 17 denotes a face plate, and the rear plate 15, the side wall 16 and the face plate 17 form an envelope (airtight container) for maintaining the inside of the display panel in a vacuum.

The substrate 11 is fixed to the rear plate 15, and N × M cold cathode elements are formed on the substrate 11 (N and M are positive integers of 2 or more. For example, in a display device intended for high-definition television display, it is desirable to set N = 3000 and M = 1000 or more, which will be described later. In the embodiment, N = 30
72 and M = 1024. The N × M cold cathode devices 12 are arranged in a simple matrix by M row direction wirings 13 and N column direction wirings 14 as shown in FIG. A portion constituted by the substrate 11, the cold cathode device 12, the row-direction wiring 13 and the column-direction wiring 14 is called a multi-electron beam source. In addition, an insulating layer (not shown) is formed between the row-direction wirings 13 and the column-direction wirings 14 at least at the intersecting portions, so that electrical insulation is maintained.

In the above description, the substrate 11 of the multi-electron beam source is fixed to the rear plate 15 of the airtight container. However, when the substrate 11 of the multi-electron beam source has sufficient strength. For this, the substrate 11 itself of the multi-electron beam source may be used as the rear plate of the airtight container.

Here, as the substrate 11, quartz glass,
Examples thereof include glass having a reduced content of impurities such as Na, soda lime glass, a glass member such as a glass substrate in which SiO 2 formed by a sputtering method or the like is laminated on soda lime glass, and a ceramic member such as alumina. Also,
The size and thickness of the substrate 11 are the number of electron-emitting devices installed on the substrate 11 and the design shape of each electron-emitting device, and the substrate 11 itself is a part of an airtight container (rear plate).
In the case of configuring, the above is appropriately set depending on the atmospheric pressure resistance condition and the like.

The rear plate 1 which constitutes an airtight container
5, the face plate 17 and the side wall 16 can withstand the atmospheric pressure applied to the airtight container and maintain a vacuum atmosphere, and can withstand only a high voltage applied between the multi-electron beam source and a metal back described later. It is preferable to use an insulating material. Examples of the material include quartz glass, glass with a reduced content of impurities such as Na, soda lime glass, and ceramic members such as alumina. However, it is necessary to use at least the face plate 17 having a certain transmittance or more for visible light. Further, it is preferable to combine members having thermal expansion coefficients close to each other.

The row wiring 13 and the column wiring 14 are also provided.
Is made of a conductive metal or the like formed in a desired pattern on the substrate 11 by a vacuum deposition method, a printing method, a sputtering method or the like, and is a material for supplying a voltage as uniform as possible to a large number of cold cathode elements 12. , Film thickness, and wiring width are set.

The row wiring 13 and the column wiring 14 described above.
The insulating layer disposed at the intersection with and is SiO 2 or the like formed by a vacuum deposition method, a printing method, a sputtering method, or the like. For example, the entire surface or a part of the substrate 11 on which the column-directional wiring 14 is formed is desired. In particular, the film thickness, the material, and the manufacturing method are appropriately set so as to withstand the potential difference at the intersection of the row-direction wiring 13 and the column-direction wiring 14 in particular.

The row wiring 13 and the column wiring 14 are N
i, Cr, Au, Mo, W, Pt, Ti, Al, Cu,
Metals or alloys such as Pd, Pd, Ag, Au,
RuO2, Pd-Ag or the like of the metal or metal oxide and formed printed conductors of glass or the like, or In 2 O 3 -SnO,
It is appropriately selected from transparent conductors such as 2 and semiconductor materials such as polysilicon.

As shown in FIGS. 1 and 2, a fluorescent film 18 is formed on the lower surface of the face plate 17. Since the mode described here is a color display device, phosphors of three primary colors of red (R), green (G), and blue (B) used in the field of CRT are used in the fluorescent film 18. It is painted separately. For example, as shown in FIG. 4A, the phosphors 21a of the respective colors are separately applied in stripes, and black conductors 21b are provided between the stripes of the phosphors 21a of the respective colors. The purpose of providing the black conductor 21b is to prevent the display color from deviating even if the irradiation position of the electron beam is slightly deviated, and to prevent the reflection of external light to prevent the deterioration of the display contrast. This is to prevent the fluorescent film from being charged up by the electron beam. Although graphite is used as a main component for the black conductor 21b, other materials may be used as long as they are suitable for the above purpose.

The method of separately coating the phosphors 21a of the three primary colors is not limited to the stripe arrangement shown in FIG. 4A, and for example, the delta arrangement shown in FIG. Other arrangements may be used.

When a monochrome display panel is manufactured, a monochromatic phosphor material may be used for the phosphor film 18.

A metal back 19 known in the field of CRTs is provided on the surface of the fluorescent film 18 on the rear plate 15 side. The purpose of providing the metal back 19 is to specularly reflect a part of the light emitted by the fluorescent film 18 to improve the light utilization efficiency, to protect the fluorescent film 18 from the collision of negative ions, and to prevent the electron beam accelerating voltage. For example, it acts as an electrode for applying the voltage, and acts as a conductive path for electrons excited in the fluorescent film 18. The metal back 19 is
After the fluorescent film 18 is formed on the face plate 17, the surface of the fluorescent film 18 is smoothed, and Al is vacuum-deposited on the surface to form the fluorescent film 18. When the fluorescent material for the low voltage is used for the fluorescent film 18, the metal back 19 is not used.

Although not used in the above embodiment, for the purpose of applying an acceleration electrode or improving the conductivity of the fluorescent film 18, for example, ITO is used as a material between the face plate 17 and the fluorescent film 18. A transparent electrode may be provided.

Dx1 to Dxm and Dy1 to Dyn and Hv
Is an electric connection terminal of an airtight structure provided for electrically connecting the display panel and an electric circuit (not shown).
Dx1 to Dxm are row-direction wirings 13 of the multi-electron beam source,
Dy1 to Dyn are column-direction wirings 14 of the multi-electron beam source,
Hv is electrically connected to the metal back 19.
Further, since the inside of the envelope (airtight container) is held in a vacuum of about 10 <-6> [Torr], for the purpose of preventing the envelope 10 from being broken by atmospheric pressure or an unexpected impact, As the atmospheric pressure resistant structure, a spacer 20 is provided inside the envelope. The spacer 20 is made of a member in which a semiconductive thin film 20b is formed on the surface of an insulating member 20a.
In addition, they are arranged with a necessary interval, and sealed on the inner surface of the envelope and the surface of the substrate 11 with frit glass or the like. The semiconductive thin film 20b is electrically connected to the inside of the face plate 17 (metal back 19 or the like) and the surface of the substrate 11 (row-direction wiring 13 or column-direction wiring 14).
In the embodiment described here, the spacer 20 has a thin plate shape, is arranged in parallel to the row-directional wiring 13, and is electrically connected to the row-directional wiring 13.

As the spacer 20, the row direction wiring 13 and the column direction wiring 14 on the substrate 11 and the face plate 1 are used.
7. What is required as long as it has an insulation property that can withstand a high voltage applied to the metal back 19 on the inner surface of the inner surface 7 and a surface conductivity that prevents the surface of the spacer 20 from being charged? It doesn't matter.

Examples of the insulating member 20a of the spacer 20 include quartz glass, glass with a reduced content of impurities such as Na, soda lime glass, and ceramic members such as alumina. It is preferable that the insulating member 20a has a coefficient of thermal expansion close to that of the member forming the envelope (airtight container) and the substrate 11.

The surface resistance value of the semiconductive thin film 20b is from 10 5 [Ω / □] to 1 in consideration of maintaining the antistatic effect and suppressing power consumption due to leakage current.
It is preferably in the range of 0 to the 12th power [Ω / □], and examples of the material thereof include Group 4 semiconductors such as silicon and germanium, compound semiconductors such as gallium arsenide, and P.
Noble metals such as t, Au, Ag, Rh, Ir, Al, S
b, Sn, Pb, Ga, Zn, In, Cd, Cu, N
i, Co, Rh, Fe, Mn, Cr, V, Ti, Zr,
An island-shaped metal film made of a metal such as Nb, Mo or W and an alloy of these metals, or tin oxide, nickel oxide,
An oxide semiconductor such as zinc oxide, or an impurity semiconductor obtained by adding a small amount of impurities to each of the above semiconductors in an amorphous state, a polycrystalline state, or a single crystal state can be given. As a film forming method of the semiconductive thin film 20b, a vacuum film forming method such as a vacuum vapor deposition method, a sputtering method, a chemical vapor deposition method, or an organic solution or a dispersion solution is applied / baked by using a dipping or spinner. Examples thereof include a coating method including steps and the like, and an electroless plating method capable of forming a metal film on the surface of an insulator by a chemical reaction. The method is appropriately selected depending on the target material and productivity.

The semiconductive thin film 20b is formed on at least the surface of the insulating member 20a which is exposed to vacuum in the envelope (airtight container). The semiconductive thin film 20b is, for example, on the face plate 17 side, the black conductor 21b or the metal back 19 described above, and on the rear plate 15 side, the row-direction wiring 13 is formed.
Alternatively, it is electrically connected to the column wiring 14.

The structure of the spacer 20, the installation position, the installation method, the face plate 17 side and the rear plate 15
The electrical connection with the side is not limited to the above case, has a sufficient atmospheric pressure resistance, and each wiring 13, 14 and the metal back 1
It has enough insulation to withstand the high voltage applied between 9 and
In addition, any material may be used as long as it has a surface conductivity that prevents the surface of the spacer 20 from being charged.

When assembling the above-mentioned airtight container (enclosure), it is necessary to seal the respective members while maintaining sufficient strength and airtightness at the joint portion of the rear plate 15, the side wall 16 and the face plate 17. However, this sealing is performed by, for example, applying frit glass to the joint portion of each of the above-mentioned members, and then applying 400 to 100 degrees Celsius in the air or a nitrogen atmosphere.
It is performed by firing at 500 degrees for 10 minutes or more.

To evacuate the inside of the airtight container to a vacuum, after assembling the airtight container, an exhaust pipe (not shown) and a vacuum pump are connected to each other, and the inside of the airtight container is reduced to the power of 10 −7 [T].
orr]. Then, the exhaust pipe is sealed, but in order to maintain the degree of vacuum in the airtight container, a getter film (not shown) is formed at a predetermined position in the airtight container immediately before or after the sealing. The getter film is, for example, a film formed by heating a getter material containing Ba as a main component with a heater or high-frequency heating and vapor-depositing it, and the adsorption action of the getter film causes 1 × 10 −5 or 1 × 10 minus 7 [Tor
r] vacuum is maintained.

In the image display device using the display panel described above, when a voltage is applied to each cold cathode element 12 through the terminals Dx1 to Dxm and Dy1 to Dyn outside the container, electrons are emitted from each cold cathode element 12. At the same time, the metal back 19 (or a transparent electrode (not shown)) is connected to the high voltage terminal Hv.
A high voltage of several kV or more is applied to accelerate the emitted electrons to collide with the inner surface of the face plate 17. As a result, the phosphor 21a of the phosphor film 18 is excited and emits light, and an image is displayed.

This state is shown in FIGS. 5 and 6. 5 and 6 are views for explaining the generation states of electrons and scattering particles described later in the display panel shown in FIG. 2, respectively. FIG. 5 is a view seen from the Y direction, and FIG. 6 is an X direction. It is the figure seen from. That is, as shown in FIG.
Electrons emitted from the electron emitting portion of the cold cathode device 12 by applying the voltage Vf to the upper cold cathode device 12 are accelerated by the acceleration voltage Va applied on the metal back 19 on the face plate 17, and It collides with the fluorescent film 18 on the inner surface of the plate 17, and the fluorescent film 18 emits light. Here, in particular, like a surface conduction electron-emitting device described in detail below, a pair of electrodes of a high-potential side electrode and a low-potential side electrode are arranged in parallel to the substrate surface, and between the pair of electrodes. In a cold cathode device having an electron emitting portion in FIG.
As shown in (3), the parabolic locus indicated by 30t is displaced with respect to the normal line from the electron emission portion 5 to the surface of the substrate 11, and the element electrode 3 on the high potential side flies. Therefore, the center of the light emitting portion of the fluorescent film 18 is deviated from the normal line from the electron emitting portion 5 to the surface of the substrate 11. It is considered that such a radiation characteristic is due to the potential distribution in the plane parallel to the substrate 11 being asymmetric with respect to the electron emitting portion 5.

In addition to the electrons emitted from the cold cathode device 12 reaching the inner surface of the face plate 17 to cause the light emission phenomenon of the fluorescent film 18, electron collision with the fluorescent film 18 and a low probability of residual gas in a vacuum are generated. Scattering particles (ions, secondary electrons, neutral particles, etc.) are generated with a certain probability due to the electron collision of
For example, it is considered that the vehicle flies in the envelope (airtight container) along the locus indicated by 31t in FIG.

In the display panel of the image display device shown in FIG. 2, in the comparative experiment using the spacer in which the semi-conductive thin film 20b is not formed, the present inventors have found that the fluorescent film 18 located near the spacer 20. It was found that the light emission shape at the upper light emission position (electron collision position) may deviate from the design value. In particular, when an image forming member for a color image is used, a decrease in luminance and a color shift may occur in addition to the light emitting position shift.

The main cause of this phenomenon is the spacer 20.
Part of the scattering particles collide with the exposed portion of the insulating member 20a and the exposed portion is charged, so that the electric field is changed in the vicinity of the exposed portion and the electron orbit is displaced,
It is considered that the change in the light emitting position and the light emitting shape of the phosphor was caused.

It was also found from the situation of changes in the light emitting position and shape of the phosphor that positive charges were mainly accumulated in the exposed portion. This may be because positive ions of the scattering particles are attached and charged, or when secondary particles are emitted when the scattering particles collide with the exposed portion, positive charging occurs.

On the other hand, in the image display device of the present invention using the display panel in which the spacer 20 having the semiconductive thin film 20b formed on the surface thereof is arranged as shown in FIG. It was confirmed that the light emission position (electron collision position) and the light emission shape on the fluorescent film 18 were as designed. That is, even if the charged particles adhere to the surface of the spacer 20, they are electrically separated from a part of the current (actually, electrons or holes) flowing through the semiconductive thin film 20b attached to the spacer surface. On the other hand, it is considered that even if electric charges are generated on the spacer surface, the electric charge is immediately eliminated.

Normally, the applied voltage Vf between the pair of device electrodes 2 and 3 (see FIG. 6) of the cold cathode device 12 is 12 to 16.
[V], the distance d between the metal back 19 and the cold cathode element 12 is about 1 [mm] to 8 [mm], the metal back 19
The voltage Va between the cold cathode element 12 and the cold cathode element 12 is 1 [kV] to 10 [k
V].

Further, with respect to the spacer arranged in the display panel according to the present invention, a more preferable embodiment will be described below by taking the embodiment shown in FIG. 7 as an example.

In FIG. 7A, 20a is an insulating member which serves as a spacer base material, and 20c is formed on the contact surface with the electron acceleration electrode such as the metal back 18 and the wirings 13 and 14 described above. The conductive film 20b is a semiconductive thin film formed on the spacer surface other than the contact surface. In the spacer 20 having the above structure, the conductive film 20c formed on the contact surface is electrically connected to the semiconductive thin film 20b formed on the spacer surface other than the contact surface.

On the other hand, in FIG. 7B, 20a is an insulating member that serves as a spacer base material, and 20c is a contact surface with the electron accelerating electrode and the wiring, and one surface other than the contact surface. Is a semi-conductive thin film formed in a region including a ridge with the contact surface. In the spacer 20 having the above-described structure, the conductive film 20c formed in a region including the contact surface and a part of the surface other than the contact surface including the edge of the contact surface is formed on the spacer surface other than the contact surface. It is electrically connected to the formed semiconductive thin film 20b.

Further, in FIG. 7 (c), 20a is an insulating member serving as a spacer base material, 20b is a semiconductive thin film formed on the entire surface of the insulating member 20a, and 20c is the electron accelerating electrode. And a conductive film formed on the contact surface with the wiring. The conductive film 20c is electrically connected to the semiconductive thin film 20b.

The semiconductive thin film 20b formed on the surface of the spacer other than the contact surface has a surface resistance value, a material and a composition in consideration of maintaining an antistatic effect and suppressing power consumption due to leakage current. The film method, etc., is as shown in FIG.
It is similar to the semiconductive thin film 20b described in 5 and 6.

The spacer 20 shown in FIGS. 7 (a) to 7 (c) is a conductive film electrically connected to the semiconductive film 20b and formed on the contact surface with another member. Since it has 20c, if at least a part of the conductive film 20c and the power feeding means (electron source and electrode) are connected, the semiconductive film 20 is provided.
A current can be evenly applied to each part of b. Thereby, the charged particles can be neutralized without disturbing the parallel electric field between the face plate and the electron source.

FIG. 8 shows the various spacers 20 described above.
FIG. 6 is a cross-sectional view of a display panel according to the present invention in which a contact member 40 including a conductive member is attached. In FIG. 8, 20 is the above-mentioned various spacers, 40 is a contact member including the conductive member, 11 is a substrate (blue plate glass) on which, for example, row wiring 13 and the like are arranged, 17 is a face plate, and 18 is Fluorescent film, 19 is metal back, 16 is side wall,
32 is frit glass. As described in detail below, the contact member 40 attached to the spacer according to the present invention.
Has both the functions of electrically connecting and mechanically fixing the above-mentioned various spacers to the electron acceleration electrode (metal back or the like) and wiring (row-direction wiring or column-direction wiring).

In FIG. 8, the row wiring 13 of the substrate 11 is used.
The electrical connection and mechanical fixing between the electron accelerating electrode (metal back 19) on the face plate side and the spacer 20 are performed as follows.

(1) Electrical connection and mechanical fixing are performed using conductive frit glass mixed with conductive fine particles.

(2) Electrical connection is made by forming a conductive material on a part of the contact surface, and mechanical fixing is performed by disposing frit glass on the other part of the contact surface.

(3) After the frit glass is arranged on the contact surface and mechanical fixing is performed, a conductive member is formed at the electrical connection portion (a part or side surface of the contact surface) for electrical connection. By doing.

(4) Mechanical fixing is performed using frit glass, and then electrical connection is performed by forming a flashed getter material in the electrical connection portion.

Next, the cold cathode device used in the multi-electron beam source of the display panel described above will be described. The multi-electron beam source used in the present invention is not limited to the material, shape or manufacturing method of the cold cathode device as long as it is an electron source in which cold cathode devices are wired in a simple matrix. Therefore, for example, a surface conduction electron-emitting device, an FE type, or a MIM type cold cathode device can be used.

However, in the situation where a display device having a large display screen and a low cost is required, the surface conduction electron-emitting device is particularly preferable among these cold cathode devices. That is, as described above, in the FE type, since the relative position and shape of the emitter cone and the gate electrode greatly affect the electron emission characteristics, an extremely high precision manufacturing technique is required, but this requires a large area and manufacturing cost. It is a detrimental factor in achieving reduction. Further, in the MIM type, it is necessary to reduce the film thickness of the insulating layer and the upper electrode and make them uniform,
This also becomes a factor in achieving a large area and a reduction in manufacturing cost. In that respect, since the surface conduction electron-emitting device is relatively simple in manufacturing method, it is easy to increase the area and reduce the manufacturing cost. Further, among the surface conduction electron-emitting devices, the inventors have found that the one in which the conductive film including the electron-emitting portion between the electrodes is formed of a fine particle film as described in detail below has a particularly high electron-emitting property. It has been found to be excellent and easy to manufacture. Therefore, it can be said that it is most suitable for use in a multi-electron beam source of a high-luminance and large-screen image display device. Therefore, the basic configuration, manufacturing method, and characteristics of the surface conduction electron-emitting device that is preferably used will be described below.

(Preferable Element Configuration and Manufacturing Method of Surface Conduction Electron Emitting Element) A typical configuration of a surface conduction electron emitting element is provided between electrodes with a conductive film made of fine particles and having an electron emitting portion. There are two types, a flat type and a vertical type.

(Plane Type Surface Conduction Electron Emitting Element) First, the element structure and manufacturing method of the plane type surface conduction electron emitting element will be described. FIG. 9 is a plan view (a) and a cross-sectional view (b) for explaining the structure of a flat surface conduction electron-emitting device. In the figure, 1 is a substrate, 2
Reference numerals 3 and 3 are device electrodes, 4 is a conductive film, and 5 is an electron emitting portion formed by a forming process such as an energization process.

As the substrate 1, for example, various glass substrates such as quartz glass and soda lime glass, various ceramics substrates such as alumina, or an insulating layer made of, for example, SiO 2 on the above various substrates. A laminated substrate or the like can be used.

Further, the device electrodes 2 and 3 provided on the substrate 1 so as to face each other in parallel with the substrate surface are made of a conductive material. For example, Ni, Cr, Au, M
Metals including o, W, Pt, Ti, Cu, Pd, Ag, etc., alloys of these metals, or In 2
Materials may be appropriately selected and used from metal oxides such as O 3 —SnO 2 and semiconductors such as polysilicon. The electrodes can be easily formed by using a film forming technique such as vacuum evaporation and a patterning technique such as photolithography and etching, for example.
It may be formed using another method (for example, a printing technique).

The shapes of the device electrodes 2 and 3 are appropriately designed according to the application purpose of the electron-emitting device. In general,
The electrode interval L is usually designed by selecting an appropriate value from the range of several hundred [angstrom] to several hundred [micrometer]. Above all, it is preferable that the electrode interval L be several [micrometer] for application to a display device. It is in the range of several tens [micrometers]. Further, the device electrode thickness d is usually selected from an appropriate value within the range of several hundred [angstrom] to several [micrometer].

Further, a fine particle film is used for the conductive film 4. The fine particle film described here refers to a film (including an island-shaped aggregate) containing a large number of fine particles as a constituent element. When the fine particle film is examined microscopically, usually, a structure in which individual fine particles are arranged apart from each other, a structure in which the fine particles are adjacent to each other, or a structure in which the fine particles overlap each other are observed.

The particle diameter of the fine particles used for the fine particle film is in the range of several [angstroms] to several thousands [angstroms].
[Angstrom] to 200 [Angstrom]
It is in the range of. Further, the film thickness of the fine particle film is appropriately set in consideration of various conditions as described below. That is, the conditions necessary to make good electrical connection with the device electrodes 2 and 3, the conditions necessary to favorably perform the energization forming process described below, and the electrical resistance of the fine particle film itself to appropriate values described below. The necessary conditions, etc. Specifically, it is set within the range of several [Angstrom] to several thousand [Angstrom], among which 1 is preferable.
It is between 0 [Angstrom] and 500 [Angstrom].

It is also used to form a fine particle film.
Examples of the material include Pd, Pt, Ru, Ag, A
u, Ti, In, Cu, Cr, Fe, Zn, Sn, T
Metals such as a, W, Pb, PdO, SnO
2, In2O3, PbO, Sb 2O3Etc.
Oxides and HfB2, ZrB2, LaB6, CeB6,
YBFour, GdBFourSuch as boride, TiC,
Including ZrC, HfC, TaC, SiC, WC, etc.
Carbides, TiN, ZrN, HfN, etc.
Nitride, semiconductors such as Si and Ge, and cars
Bonn and the like are included, and are appropriately selected from these.

As described above, the conductive film 4 is formed of a fine particle film, but the sheet resistance value thereof is 10-3.
It was set to fall within the range from the power of 10 to the power of 7 [Ω / □].

The conductive film 4 and the device electrodes 2 and 3 are
Since it is desirable to have good electrical connection, the structure is such that some of them overlap each other. In the example of FIG. 5, the stacking method is such that the substrate 1, the device electrodes 2, 3 and the conductive film 4 are stacked in this order from the bottom, but in some cases, the substrate, the conductive film and the device electrode are stacked from the bottom. It does not matter if they are stacked in order.

The electron emitting portion 5 is a gap such as a crack formed in a part of the conductive film 4, and has an electrically higher resistance than the surrounding conductive film. The gap such as the crack is formed by subjecting the conductive film 4 to an energization forming process described later. In the crack,
From a few [Angstrom] to a few hundred [Angstrom]
There are cases where fine particles having a particle size of 10 are arranged. Since it is difficult to accurately and accurately illustrate the actual position and shape of the electron-emitting portion, the electron-emitting portion is schematically shown in FIG.

Further, as shown in FIGS. 10 (a) (plan view) and 10 (b) (cross-sectional view), the electron emission part 5 and the thin film 6 made of carbon or a carbon compound may be provided in the vicinity thereof. The thin film 6 is formed by performing an energization activation process described later after the energization forming process.

The thin film 6 is made of single crystal graphite, polycrystalline graphite, amorphous carbon, or a mixture thereof, and has a film thickness of 500 [angstrom] or less, but 300 [angstrom] or less. More preferably.

Since it is difficult to accurately illustrate the actual position and shape of the thin film 6, FIG. 10 schematically shows the position and shape.

The basic structure of a preferable element has been described above, but the following elements were used in Examples described later.

That is, soda lime glass is used for the substrate 1,
Ni thin films were used for the device electrodes 2 and 3. The thickness d of the device electrode is 1000 [angstrom], and the electrode gap L is 2
[Micrometer].

Pd or P as the main material of the fine particle film
The thickness of the fine particle film was about 100 [angstrom] and the width W was 100 [micrometer] using dO.

Next, a method of manufacturing a suitable flat surface conduction electron-emitting device will be described. 11 (a)-
(D) is a cross-sectional view for explaining a manufacturing process of the surface conduction electron-emitting device, and the notation of each member is shown in FIG. 9 and FIG.
Same as 0.

1) First, as shown in FIG. 11A, the device electrodes 2 and 3 are formed on the substrate 1. Substrate 1 in advance
Is thoroughly washed with a detergent, pure water, and an organic solvent, and then the material of the element electrode is deposited. As a deposition method, for example, a vacuum film forming technique such as a vapor deposition method or a sputtering method may be used. After that, the deposited electrode material is patterned by using a photolithography / etching technique.
The pair of device electrodes 2 and 3 shown in (a) are formed.

2) Next, as shown in FIG. 11B, the conductive film 4 is formed. First, an organic metal solution is applied onto the substrate of FIG. 11A, dried, and heated and baked to form a fine particle film, which is then patterned into a predetermined shape by photolithography etching. Here, the organometallic solution is a solution of an organometallic compound whose main element is the material of the fine particles used for the conductive film (Pd was used as the main element in the examples described below. Although the dipping method was used as the coating method, other methods such as a spinner method or a spray method may be used.

As a method for forming a conductive film made of a fine particle film, for example, a method other than the above-mentioned method of applying an organic metal solution, such as a vacuum evaporation method, a sputtering method, or a chemical vapor deposition method is used. There is also.

3) Next, as shown in FIG. 11C, an appropriate voltage is applied between the forming power source 22 and the element electrodes 2 and 3 to carry out energization forming treatment, so that the electron emitting portion 5 is removed. Form.

The energization forming treatment means that the electroconductive film 4 made of a fine particle film is energized so that a part of it is appropriately destroyed, deformed or altered, and a structure suitable for electron emission is changed. It is a process that causes it. Appropriate cracks are formed in the thin film in the portion of the conductive film made of the fine particle film that has changed to a structure suitable for emitting electrons (that is, the electron emitting portion 5). The electron emission unit 5
After the formation, the electric resistance measured between the device electrodes 2 and 3 is significantly increased as compared with before the formation.

In order to explain the energizing method in more detail, FIG. 12 shows an example of an appropriate voltage waveform applied from the forming power source 22. When forming a conductive film made of a fine particle film, a pulsed voltage is preferable,
In the method of manufacturing the surface conduction electron-emitting device used in Examples described later, a triangular wave pulse having a pulse width T1 was continuously applied at a pulse interval T2 as shown in FIG. At that time, the peak value Vpf of the triangular wave pulse was sequentially increased. Further, monitor pulses Pm for monitoring the formation state of the electron emitting portion 5 were inserted between the triangular wave pulses at appropriate intervals, and the current flowing at that time was measured by the ammeter 23.

In the method of manufacturing the surface conduction electron-emitting device used in the embodiments described later, for example, in a vacuum atmosphere of about 10 −5 [Torr], for example, a pulse width T1 of 1 [millisecond], Pulse interval T2 is 10
[Millisecond], and the peak value Vpf is set to 0.1 for each pulse.
The voltage was increased by [V]. Then, the monitor pulse Pm was inserted once every five pulses of the triangular wave were applied. The voltage Vpm of the monitor pulse was set to 0.1 [V] so as not to adversely affect the forming process. The electric resistance between the device electrodes 2 and 3 is 1 ×
When the current reaches 10 6 [Ω], that is, when the current measured by the ammeter 23 when the monitor pulse is applied becomes 1 × 10 −7 [A] or less, the energization related to the forming process is terminated. did.

The above method is a preferable method for the surface conduction electron-emitting device, and for example, when the design of the surface conduction electron-emitting device such as the material and film thickness of the fine particle film or the device electrode spacing L is changed. It is desirable to appropriately change the energization conditions accordingly.

4) Next, as described above with reference to FIG. 10, the activation treatment may be performed to form the thin film 6 (FIG. 10).
In this activation process, as shown in FIG. 11D, an appropriate voltage is applied between the activation power supply 24 and the device electrodes 2 and 3, and the energization activation process is performed to improve the electron emission characteristics. I do.

The energization activation process is a process of energizing the electron-emitting portion 5 formed by the energization forming process under appropriate conditions to deposit carbon or a carbon compound in the vicinity thereof (in the figure). Shows typically a deposit made of carbon or a carbon compound as the member 6.). Note that by performing the energization activation process, the emission current at the same applied voltage can be increased typically 100 times or more as compared to before the energization activation process.

Specifically, 10 to the fourth power of 4 to 1
By periodically applying a voltage pulse in a vacuum atmosphere within a range of 0 to the fifth power [Torr], carbon or a carbon compound originating from an organic compound existing in the vacuum atmosphere is deposited. The deposit 6 is any one of single crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof, and the film thickness is 500 [angstrom] or less, more preferably 300 [angstrom] or less.

In order to explain the energization method in the activation process in more detail, FIG. 13A shows an example of an appropriate voltage waveform applied from the activation power supply 24. In the method for manufacturing the surface conduction electron-emitting device used in the examples described later, the energization activation process was performed by periodically applying a rectangular wave of a constant voltage. Specifically, the rectangular wave voltage Vac
Is 14 [V], the pulse width T3 is 1 [millisecond], and the pulse interval T4 is 10 [millisecond]. The above-mentioned energization conditions are preferable conditions for the surface-conduction type electron-emitting device of this embodiment, and when the design of the surface-conduction type electron-emitting device is changed, it is desirable to appropriately change the conditions accordingly.

In FIG. 11D, a DC high-voltage power supply 26 and an ammeter 27 are connected to the anode electrode for supplementing the emission current Ie emitted from the surface conduction electron-emitting device (note that the substrate is a substrate). (1) is incorporated into the display panel and then activated, the fluorescent surface of the display panel is used as the anode electrode 25).

When a voltage is applied from the activation power supply 24,
The emission current Ie is measured by the ammeter 27 to monitor the progress of the energization activation process, and the operation of the activation power supply 24 is controlled. An example of the emission current Ie measured by the ammeter 27 is shown in FIG. 13 (b). When the pulse voltage is started to be applied from the activation power supply 24, the emission current Ie increases with the passage of time, but eventually becomes saturated. Will almost never increase.
In this way, when the emission current Ie is almost saturated, the voltage application from the activation power supply 24 is stopped, and the energization activation process ends.

The above-mentioned energization conditions are preferable conditions for the surface conduction electron-emitting devices of Examples described later,
When the design of the surface conduction electron-emitting device is changed, it is desirable to appropriately change the conditions accordingly.

As described above, the flat surface conduction electron-emitting device shown in FIG. 11E is manufactured.

(Vertical Surface Conduction Electron Emitting Element) Next, the structure of the vertical surface conduction electron emitting element will be described.

14 and 15 are schematic sectional views for explaining the basic structure of the vertical type. In FIGS. 14 and 15, 1 is a substrate, 2 and 3 are element electrodes, and 28 is a step. A forming member, 4 is a conductive film using a fine particle film, and 5 is an electron emitting portion formed by an energization forming treatment.
6 out of 5 is a thin film formed by the energization activation treatment.

The vertical type differs from the planar type described above in that one element electrode 3 is provided on the step forming member 28, and the conductive film 4 covers the side surface of the step forming member 28. In point. Therefore, the device electrode interval L in the planar type shown in FIGS. 9 and 10 is set as the step height Ls of the step forming member 28 in the vertical type. For the substrate 1, the device electrodes 2 and 3, and the conductive film 4 using a fine particle film, the materials listed in the description of the planar type can be similarly used. Also, the step forming member 2
For 8, an electrically insulating material such as SiO2 is used.

Next, a method of manufacturing the vertical surface conduction electron-emitting device will be described. 16A to 16F are cross-sectional views for explaining the manufacturing process, and the notation of each member is the same as that in FIGS. 14 and 15.

1) First, as shown in FIG. 16A, the device electrode 2 is formed on the substrate 1.

2) Next, as shown in FIG. 16B, an insulating layer 28 for forming a step forming member is laminated.

3) Next, as shown in FIG. 16C, the device electrode 3 is formed on the insulating layer 28.

4) Next, as shown in FIG. 16D, a part of the insulating layer 28 is removed by using, for example, an etching method to expose the device electrode 2.

5) Next, as shown in FIG. 16E, the conductive film 4 using a fine particle film is formed. This conductive film 4
In order to form the film, a film forming technique such as a coating method may be used as in the case of the flat type.

6) Next, as in the case of the flat type, the energization forming process is performed to form the electron emitting portion 5.
The energization forming process may be the same as the planar energization forming process described with reference to FIG.

7) Next, as in the case of the planar type, there is a case where an energization activation process is performed to deposit carbon or a carbon compound in the vicinity of the electron emitting portion. In this case, FIG.
The same process as the planar energization activation process described using (d) may be performed.

As described above, the vertical surface conduction electron-emitting device shown in FIG. 16 (f) is manufactured.

(Characteristics of Surface Conduction Electron-Emitting Element Used in Display Device) The element structure and manufacturing method of the surface conduction electron-emitting device of the plane type and the vertical type have been described above. The characteristics of will be described.

FIG. 17 shows typical examples of (emission current Ie) vs. (device applied voltage Vf) characteristics and (device current If) vs. (device applied voltage Vf) characteristics of the device used in the display device. . The emission current Ie is significantly smaller than the device current If, and it is difficult to show the emission current Ie on the same scale.
Since these characteristics are changed by changing the design parameters such as the size and shape of the device, the two graphs are shown in arbitrary units.

The element used for the display device has the following three characteristics regarding the emission current Ie.

First, a certain voltage (this is the threshold voltage Vth
The emission current Ie increases sharply when a voltage of the above magnitude is applied to the element, while the emission current Ie is hardly detected at a voltage lower than the threshold voltage Vth. That is, it is a non-linear element having a clear threshold voltage Vth with respect to the emission current Ie.

Secondly, since the emission current Ie changes depending on the element voltage Vf, the magnitude of the emission current Ie can be controlled by the element voltage Vf.

Thirdly, since the response speed of the emission current Ie is fast with respect to the device applied voltage Vf, the charge amount of electrons emitted from the device can be controlled by the length of time for which the device applied voltage Vf is applied.

Due to the above-mentioned characteristics, the surface conduction electron-emitting device could be preferably used in a display device. For example, in a display device provided with a large number of elements corresponding to the pixels of the display screen, by utilizing the first characteristic, it is possible to sequentially scan and display the display screen. That is, a voltage equal to or higher than the threshold voltage Vth is appropriately applied to the driven element according to the desired light emission luminance, and a voltage lower than the threshold voltage Vth is applied to the non-selected element. By sequentially switching the elements to be driven, it is possible to sequentially scan the display screen for display. Further, since the emission brightness can be controlled by utilizing the second characteristic or the third characteristic, it is possible to perform the gradation display.

A method of driving the image forming apparatus such as the display device according to the present invention described above will be described with reference to FIGS.

FIG. 18 is a block diagram showing a schematic configuration of a drive circuit for performing television display based on an NTSC television signal. In the figure, a display panel 1701 corresponds to the above-mentioned display panel, and is manufactured and operates as described above. In addition, the scanning circuit 1702
Scans the display line, and the control circuit 1703 generates a signal or the like to be input to the scan circuit. The shift register 1704 shifts the data for each line, and the line memory 1705
Inputs data for one line from the shift register 1704 to the modulation signal generator 1707. The sync signal separation circuit 1706 separates the sync signal from the NTSC signal.

The functions of the respective parts of the apparatus shown in FIG. 18 will be described in detail below.

First, the display panel 1701 has terminals Dx1 to Dxm, terminals Dy1 to Dyn, and high-voltage terminal Hv.
Is connected to an external electric circuit via. this house,
To the terminals Dx1 to Dxm, multi-electron beam sources provided in the display panel 1701, that is, cold cathode devices arranged in a matrix of m rows and n columns in a matrix are sequentially driven row by row (n elements). Scanning signal is applied.

On the other hand, the terminals Dy1 to Dyn are applied with a modulation signal for controlling the output electron beam of each of the n elements for one row selected by the scanning signal. Also,
The high-voltage terminal Hv receives, for example, 5 k from the DC voltage source Va.
A DC voltage of [V] is supplied, which is an accelerating voltage for imparting sufficient energy to excite the phosphor to the electron beam output from the multi-electron beam source.

Next, the scanning circuit 1702 will be described.

The circuit is provided with m switching elements (schematically shown by S1 to Sm in the figure) inside, and each switching element has an output voltage of the DC voltage source Vx or 0 [0]. V] (ground level) is selected and electrically connected to the terminals Dx1 to Dxm of the display panel 1701. Each of the switching elements S1 to Sm operates based on the control signal T SCAN output from the control circuit 1703, but in practice, it can be easily configured by combining switching elements such as FETs. .

The DC voltage source Vx is a constant voltage based on the characteristics of the electron-emitting device illustrated in FIG. 17 so that the driving voltage applied to the non-scanned device is equal to or lower than the electron-emission threshold voltage Vth voltage. Is set to output.

The control circuit 1703 has a function of matching the operation of each part so that an appropriate display is performed based on an image signal input from the outside. Based on a synchronizing signal T SYNC sent from a synchronizing signal separation circuit 1706 described below, control signals T SCAN, T SFT and T MRY are generated for each unit.

The sync signal separation circuit 1706 is a circuit for separating a sync signal component and a luminance signal component from an externally input NTSC television signal, and is a frequency separation (filter) as is well known. It can be easily constructed by using a circuit. The sync signal separated by the sync signal separation circuit 1706 is composed of a vertical sync signal and a horizontal sync signal, as is well known, but is shown here as a T SYNC signal for convenience of description. On the other hand, the luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience, but the signal is input to the shift register 1704.

The shift register 1704 is for converting the DATA signals serially input in time series into serial / parallel conversion for each line of the image, and uses the control signal T SFT sent from the control circuit 1703. Work based. That is, it can be said that the control signal T SFT is the shift clock of the shift register 1704.

One line of serial / parallel converted image (corresponding to drive data for n electron-emitting devices)
Data is output from the shift register 1704 as n parallel signals I D1 to I DN .

The line memory 1705 is a storage device for storing data for one line of an image only for a required time, and appropriately stores the contents of I D1 to I DN according to the control signal T MRY sent from the control circuit 1703. Remember. The stored contents are output as I ′ D1 to I ′ DN and input to the modulation signal generator 1707.

[0148] Modulation signal generator 1707, 'to D1 to I' the image data I according to each of the DN, the electron-emitting device 1
5 is a signal source for appropriately driving and modulating each of the five, and its output signal is output through the terminals Dyl to Dyn to the display panel 170.
1 is applied to the cold cathode device.

As described with reference to FIG. 17, the surface conduction electron-emitting device according to the present invention has the following basic characteristics with respect to the emission current Ie. That is, Ie in FIG.
As is clear from the graph, the electron emission has a clear threshold voltage Vth (8 [V] in the surface conduction electron-emitting device of the embodiment described later), and the electrons are emitted only when a voltage equal to or higher than the threshold Vth is applied. Release occurs.

For a voltage equal to or higher than the electron emission threshold Vth, the emission current I changes according to the voltage change as shown in the graph.
e also changes. The value of the electron emission threshold voltage Vth or the degree of change of the emission current with respect to the applied voltage may be changed by changing the material, configuration, or manufacturing method of the surface conduction electron-emitting device.

The functions of the respective parts shown in FIG. 18 have been described above, but before proceeding to the description of the whole operation, FIGS.
The operation of the display panel 1701 will be described in more detail with reference to a surface-conduction electron-emitting device having a Vth of 8 [V] used as an example of a cold cathode device as a cold cathode device.

For convenience of illustration, the number of pixels of the display panel is 6 ×.
6 (that is, m = n = 6).

FIG. 19 shows a multi-electron beam source in which surface conduction electron-emitting devices are arranged in a matrix in a matrix of 6 rows and 6 columns.
The position is indicated by (X, Y) coordinates such as (1,1), D (1,2) or D (6,6).

When displaying an image by driving such a multi-electron beam source, a method of forming an image in line order with one line of the image parallel to the X-axis as a unit is adopted. In order to drive the surface conduction electron-emitting device corresponding to one line of the image, 0 [V] is applied to the terminals of the row corresponding to the display line of Dx1 to Dx6 and 7 [V] is applied to the other terminals. Apply. In synchronization with this, a modulation signal is applied to each terminal of Dy1 to Dy6 according to the image pattern of the line.

For example, a case of displaying an image pattern as shown in FIG. 20 will be described as an example.

Therefore, of the image of FIG. 20, for example, the period during which the third line is made to emit light will be described.
FIG. 21 shows that while the third line of the image is being emitted,
The voltage values applied to the multi-electron beam source through the terminals Dx1 to Dx6 and Dy1 to Dy6 are shown. As is clear from the figure, D (2,3), D (3,
3), D (4,3) each of the surface conduction electron-emitting devices,
An electron beam is output when 14 [V] (elements shown in black in the figure) exceeding the electron emission threshold voltage 8 [V] is applied. On the other hand, other than the above three elements, 7 [V] (elements indicated by hatching in the figure) or 0 [V] (elements indicated by white in the figure)
Is applied, but this is less than the threshold voltage 8 [V] for electron emission, so no electron beam is output from these elements.

The same method is used for the other lines as shown in FIG.
The multi-electron beam source is driven in accordance with the display pattern of 0, but one screen is displayed by sequentially driving each line from the first line. 6 this every second
By repeating at the speed of 0 screen, it is possible to display an image without flicker.

[0158]

EXAMPLES The present invention will be described in more detail below with reference to examples.

In each of the embodiments described below, as a multi-electron beam source, N × M (N = 307) of the type described above having an electron emitting portion in the conductive fine particle film between electrodes.
2. A multi-electron beam source was used in which the surface conduction electron-emitting device (2, M = 1024) was matrix-wired (see FIGS. 2 and 3) by M row-direction wirings and N column-direction wirings.

First, as described below, a substrate was prepared in which N × M conductive films made of fine particles were arranged in matrix and arranged. An example of the method of manufacturing this substrate will be specifically described in the order of steps with reference to FIG. Note that the following steps a to h are (a) to FIG.
Corresponds to (h).

Step a: A silicon oxide film having a thickness of 0.5 μm is formed on a cleaned soda lime glass by a sputtering method on an insulating substrate 11 ′ to have a thickness of 50 by vacuum evaporation.
After sequentially stacking Cr of [Angstrom] and Au of a thickness of 5000 [Angstrom], photoresist (A
(Z1370, manufactured by Hoechst Co., Ltd.) is spin-coated by a spinner and baked, and then a photomask image is exposed and developed to form a resist pattern of the column-directional wiring 14, and Au / Cr is used.
The deposited film was wet-etched to form the column-directional wiring 14 having a desired shape.

Step b: Next, the interlayer insulating layer 33 made of a silicon oxide film having a thickness of 1.0 [micrometer] is formed by RF.
It was deposited by the sputtering method.

Step c: A photoresist pattern for forming the contact hole 33a is formed in the silicon oxide film deposited in the step b, and using this as a mask, the interlayer insulating layer 33 is formed.
Was etched to form a contact hole 33a.
The etching is performed by RIE (Rea using CF 4 and H 2 gas).
The active Ion Etching) method was used. Step d: After that, a pattern to form a gap between the device electrodes and the device electrodes is formed by a photoresist (RD-2000N-41).
Made by Hitachi Chemical Co., Ltd., and the thickness is 5 by the vacuum deposition method.
0 [angstrom] Ti and 1000 [angstrom] Ni were sequentially deposited. The photoresist pattern was dissolved in an organic solvent, the Ni / Ti deposited film was lifted off, and the device electrode spacing L (see FIG. 9) was 3 [micrometers] and the device electrode width W (see FIG. 9) was 300 [micrometers]. Certain device electrodes 2 and 13 were formed.

Step e: After forming a photoresist pattern of the row-direction wiring 13 on the device electrodes 2 and 3, a thickness of 50 is obtained.
Ti of [Angstrom] and Au of a thickness of 6000 [Angstrom] were sequentially deposited by vacuum evaporation, and unnecessary portions were removed by lift-off to form the row-direction wiring 13 having a desired shape.

Step f: As shown in FIG. 23, a mask having an opening 35a extending over a pair of element electrodes 2 and 3 which are spaced by an inter-element electrode interval L is used, and a film thickness of 10
A Cr film 21 of 00 [angstrom] is deposited and patterned by vacuum evaporation, and an organic Pd solution (c
cp4230 Okuno Seiyaku Co., Ltd.) was spin-coated with a spinner and heated and baked at 300 ° C. for 10 minutes.

Electron emission portion forming film (conductive film) 4 made of fine particles containing Pd as a main element, thus formed.
Had a film thickness of about 100 [Å] and a sheet resistance value of 5 × 10 4 [Ω / □]. The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure is not only in a state in which the fine particles are individually dispersed and arranged, but also in a state in which the fine particles are adjacent to each other or overlap each other (islet-shaped (Including), and the particle diameter thereof means the diameter of fine particles whose particle shape can be recognized in the above state.

An organic metal solution (organic P in this embodiment) is used.
d solution) means Pd, Ru, Ag, Au, Ti, I
It is a solution of an organic compound containing a metal such as n, Cu, Cr, Fe, Zn, Sn, Ta, W, or Pb as a main element. Also,
In this embodiment, as a method of manufacturing the electron emitting portion forming thin film 4,
Although the coating method of the organic metal solution is used, it is not limited to this, and it may be formed by a vacuum vapor deposition method, a sputtering method, a chemical vapor deposition method, a dispersion coating method, a dipping method, a spinner method, or the like.

Step g: Cr film 34 by acid etchant
Then, the thin film 4 for forming an electron emission portion having a desired pattern was formed.

Step h: A pattern is formed such that a resist is applied to portions other than the contact hole 33a portion, and Ti having a thickness of 50 [angstrom] and a thickness of 5 are formed by vacuum evaporation.
000 [angstrom] Au was sequentially laminated. Contact holes 33a were filled by removing unnecessary portions by lift-off.

Through the above steps, M row-direction wirings 1
3, a conductive film (electron emission portion forming film) 4 electrically connected to the N column-direction wirings 14 through the device electrodes 2 and 3
A plurality (M × N) of them are formed and arranged in a matrix on the insulating substrate 11 ′.

Example 1-1 In this example, a display panel in which the spacers 20 shown in FIG. 1 described above are arranged is manufactured. The details will be described below with reference to FIGS. 1 and 2. First, as described above, a plurality of conductive films (films for forming electron emission portions)
Are arranged in a matrix, and the arranged substrate 11 ′ is fixed to the rear plate 15. Next, of the surface of the insulating member 20a made of soda lime glass, a spacer 20 (height 5 mm) having four semi-conductive thin films 20b made of tin oxide formed on four surfaces exposed in the envelope (airtight container). , Plate thickness 200 μm,
Row-wise wiring 1 on the substrate 11 'at equal intervals (length 20 mm)
3 was fixed in parallel with the row-direction wiring 13. afterwards,
A face plate 17 having a fluorescent film 18 and a metal back 19 attached to the inner surface is provided 5 mm above the substrate 11 ′ for the side wall 1.
The rear plate 15, the face plate 17, the side wall 16 and the spacer 20 are fixed to each other by fixing the joints.

The joint between the substrate 11 'and the rear plate 15,
The joint between the rear plate 15 and the side wall 16 and the joint between the face plate 17 and the side wall 16 are sealed by applying frit glass (not shown) and baking in air at 400 ° C. to 500 ° C. for 10 minutes or more. did.

The spacer 20 is made of conductive frit glass mixed with a conductive material such as metal on the row wiring 13 (line width 300 μm) on the substrate 11 ′ side and on the metal back 19 surface on the face plate 17 side. (Not shown), and was fired at 400 ° C. to 500 ° C. for 10 minutes or more in the air to perform sealing and electrical connection.

In this embodiment, the fluorescent film 18 is used.
As shown in FIG. 24, each color phosphor 21a adopts a stripe shape extending in the Y direction, and the black conductor 21b is used not only between the color phosphors (R, G, B) 21a but also in each Y direction. A fluorescent film arranged so as to separate pixels is also used, and the spacer 20 is a black conductor 2 parallel to the X direction.
The metal back 19 was disposed in the region 1b (line width 300 μm).

The spacers 20 are formed by using an electron beam method to deposit tin oxide having a thickness of 1000 angstroms as a semiconductive thin film 20b on the surface of an insulating member 20a made of cleaned soda lime glass. The film was formed by plating in an argon / oxygen atmosphere. At this time, the surface resistance value of the semiconductive thin film 20b was about 10 9 [Ω / □].

At the time of performing the above-mentioned sealing, each color phosphor 21a and each conductive film 4 (FIG. 22 (h)) for forming the electron emission portion, which is arranged on the substrate 11 ', are formed. The rear plate 15, the face plate 17, and the spacer 20 are sufficiently aligned because they have to be matched.

The atmosphere in the envelope (airtight container) completed as described above is exhausted by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the external terminals Dx1 ...
A voltage is applied to each of the above-mentioned conductive films 4 for forming the electron emitting portion through Dxm and Dy1 to Dyn, and the conductive film 4 for forming the electron emitting portion is energized (energized forming process) to obtain the electroconductivity. An electron-emitting portion was formed on each of the films, and a multi-electron beam source having a plurality of surface conduction electron-emitting devices arranged in matrix as the cold cathode device 12 as shown in FIGS. 2 and 3 was produced. The energization forming process was performed by applying the voltage having the waveform shown in FIG.

Next, an exhaust pipe (not shown) was heated by a gas burner to be welded at a vacuum degree of about 10 −6 [Torr] to seal the envelope (airtight container).

Finally, in order to maintain the degree of vacuum after sealing, getter processing was performed.

In the image display device using the display panel as shown in FIGS. 1 and 2 completed as described above, each cold cathode device (surface conduction electron-emitting device) 12 has a terminal Dx1 outside the container. Through Dxm and Dy1 through Dyn, electrons are emitted by applying a scanning signal and a modulation signal from a signal generating means (not shown), and a high voltage is applied to the metal back 19 through a high voltage terminal Hv. To accelerate electrons to collide with the fluorescent film 18,
An image was displayed by exciting and emitting light of each color phosphor 21a (R, G, B in FIG. 24). The applied voltage Va to the high voltage terminal Hv was 3 [kV] to 10 [kV], and the applied voltage Vf between the wirings 13 and 14 was 14 [V].

At this time, two-dimensionally formed light emission spot rows including light emission spots due to the electrons emitted from the cold cathode element 12 located near the spacer 20 are formed, and a clear and good color reproducibility color image is obtained. I was able to display. This means that even if the spacer 20 is installed, the disturbance of the electric field that affects the electron orbit does not occur.

Example 1-2 This example is different from Example 1-1 described above in that the spacer 2 shown in FIG.
This is that as the semi-conductive thin film 20b of 0, tin oxide having a thickness of 1000 [angstrom] was formed in an oxygen atmosphere by ion plating using the electron beam method. At this time, the surface resistance value of the semiconductive thin film 20b was about 10 12 [Ω / □]. A display panel similar to that in Example 1-1 was produced except for the above-mentioned points.

In the image display device using the display panel provided with the spacers 20, each cold cathode device (surface conduction electron-emitting device) 12 has external terminals Dx1 to Dxm, Dx.
Electrons are emitted by applying a scanning signal and a modulation signal from a signal generating means (not shown) through y1 to Dyn, and a high voltage is applied to the metal back 19 through a high voltage terminal Hv to accelerate the emitted electron beam. An image is displayed by causing electrons to collide with the phosphor film 18 to excite and emit the phosphor 21a. The applied voltage Va to the high voltage terminal Hv is 3 [kV] to 10 [kV], the wiring 13,
The applied voltage Vf between 14 was set to 14 [V].

At this time, it was confirmed from the comparison with the case of the image display device for the comparative experiment using the spacer 20 without the semiconductive thin film 20b that the antistatic effect was obtained also in this example. .

(Embodiment 1-3) This embodiment is different from the above-mentioned embodiment 1-1 in that the semi-conductive thin film 20b of the spacer 20 shown in FIG. 1 has a thickness of 1000 [angstrom]. The point is that tin oxide was deposited in an argon atmosphere by ion plating using the electron beam method. At this time, the surface resistance value of the semiconductive thin film 20b was about 10 7 [Ω / □]. Further, in this embodiment, the metal back 19 is not provided, but instead, the transparent electrode made of the ITO film is provided between the face plate 17 and the fluorescent film 18. The ITO film is composed of a black conductor 21b (see FIG. 24) and a high voltage terminal Hv (see FIG. 2).
Arranged for electrical connection with. A display panel similar to that in Example 1-1 was produced except for the above-mentioned points.

In the image display device using the display panel provided with the spacers 20, each cold cathode device (surface conduction electron-emitting device) 12 has terminals Dx1 to Dxm, D outside the container.
Electrons are emitted by applying a scanning signal and a modulation signal from a signal generating means (not shown) through y1 to Dyn, and the high voltage terminal Hv is applied to the transparent electrode made of the ITO film.
An image is displayed by accelerating the emitted electron beam by applying a high voltage through, causing electrons to collide with the phosphor film 18, and exciting and emitting the phosphor 21a (see FIG. 24).
The applied voltage Va to the high voltage terminal Hv was 1 [kV] or less, and the applied voltage Vf between the wirings 13 and 14 was 14 [V].

At this time, a light emitting spot row is formed two-dimensionally at equal intervals including the light emitting spots due to the electrons emitted from the cold cathode element 12 located near the spacer 20, and the color image is clear and has good color reproducibility. I was able to display. This means that even if the spacer 20 is installed, the disturbance of the electric field that affects the electron orbit does not occur.

(Embodiment 1-4) This embodiment is different from the above-mentioned embodiment 1-1 in that the semiconductive thin film 20b of the spacer 20 shown in FIG. ] The tin oxide of] was deposited by ion plating using an electron beam method. At this time, the surface resistance value of the semiconductive thin film 20b is
It was about 10 5 [Ω / □]. Further, in this embodiment, the metal back 19 was not provided, but instead, the transparent electrode made of the ITO film was provided between the face plate 17 and the fluorescent film 18. The ITO film is a black conductor 2.
1b (see FIG. 24) and the high-voltage terminal Hv (see FIG. 2) are arranged so as to be electrically connected. A phosphor for low-speed electron beam was used as the phosphor 21a (see FIG. 24). Further, the height of the spacer 20 and the distance between the substrate 11 and the face plate 17 are set to 1 [mm].

In the image display device using the display panel provided with the spacers 20, each cold cathode device (surface conduction electron-emitting device) 12 has terminals outside the container Dx1 to Dxm, Dx.
Electrons are emitted by applying a scanning signal and a modulation signal from a signal generating means (not shown) through y1 to Dyn, and the high voltage terminal Hv is applied to the transparent electrode made of the ITO film.
An image is displayed by accelerating the emitted electron beam by applying a high voltage through, causing electrons to collide with the phosphor film 18, and exciting and emitting the phosphor 21a (see FIG. 24).
The applied voltage Va to the high voltage terminal Hv was 10 [V] to 100 [V], and the applied voltage Vf between the wirings 13 and 14 was 14 [V].

At this time, two-dimensionally formed light emission spot rows are formed at equal intervals including the light emission spots due to the electrons emitted from the cold cathode element 12 located near the spacer 20, and the color image is clear and has good color reproducibility. I was able to display. This means that even if the spacer 20 is installed, the disturbance of the electric field that affects the electron orbit does not occur.

As described above, the image display device of each embodiment has the following effects.

First, since the charge to be prevented is generated on the surface of the spacer 20, it is sufficient for the spacer 20 to have an antistatic function only on the surface thereof. Therefore, in the above examples, the insulating member 20a was used as the member forming the spacer 20, and the semiconductive thin film 20b was formed on the surface of the insulating member 20a. Thereby, the spacer 20
Has a low enough resistance value to neutralize the charge on the surface of
In addition, it is possible to realize the spacer 20 in which the leak current amount is limited to the extent that the power consumption of the entire device is not extremely increased. That is, an image forming apparatus such as a thin and large-area image display apparatus was obtained without impairing the small heat generation, which is a feature of cold cathode elements such as surface conduction electron-emitting devices.

Next, as the shape of the spacer 20, as shown in FIGS. 1 and 2, a flat plate-like shape whose cross-sectional shape is uniform with respect to the normal direction of the substrate 11 and the face plate 17 is used. Since it is adopted, the electric field is not disturbed by the spacer 20 itself. Therefore, as long as the spacer 20 does not block the electron trajectory from the cold cathode device 12, the spacer 20 and the cold cathode device 12 can be arranged close to each other, so that the cold cathode device 12 can be densely arranged in the X direction orthogonal to the spacer 20. I was able to place it. Moreover, the leakage current is the spacer 20.
Since it does not flow into the insulating member 20a that occupies most of the cross section of the above, the leak current is suppressed to a small amount without a device such as joining the spacer 20 to the substrate 11 or the face plate 17 with a pointed shape. I was able to.

In particular, when the surface conduction electron-emitting device is used as the cold cathode device as in the above embodiments, the flat spacer 20 is used as the cold cathode device (surface conduction electron-emitting device) 12. Are arranged in parallel with the XZ plane along an electron orbit deviated in the X direction from, the cold cathode device (surface conduction electron-emitting device) in the X direction parallel to the spacer 20 without being blocked by the spacer 20. ) 12 could be arranged in high density.

Further, each spacer 20 is electrically connected to one row-direction wiring 13 on the substrate 11 side, and unnecessary electrical coupling between wirings on the substrate 11 can be avoided. .

Further, by providing the desired semiconductive thin film 20b, the above effect is exhibited, and the spacer 20 according to the present invention which does not require a complicated additional structure for preventing charging is provided.
By applying the surface conduction electron-emitting device proposed by the applicant to an image display device using a multi-electron beam source with simple matrix wiring, a thin and large device that can form a high-quality image with a simple device configuration. An image display device having a large area can be provided.

Further, in the embodiment described in detail below, as shown in FIGS. 25 and 27, the stacking order at the intersection of the row-directional wiring 13 and the column-directional wiring 14 is opposite to that of the above-described embodiments. And the spacer 2 as shown in FIGS.
The difference is that 0 is installed on the column wiring 14.

25 is a perspective view in which a part of the display panel used in the image display device of the embodiment described below is cut away, and FIG. 26 is a sectional view of the main part of the display panel shown in FIG. (A part of C-C 'cross section). Also, FIG.
The fluorescent films 18 of the display panels 5 and 26 have the shape shown in FIG.

25 and 26, the substrate 11 on which a plurality of cold cathode devices (surface conduction electron-emitting devices) 12 are arranged in matrix and fixed is fixed to the rear plate 15. A fluorescent film 18 and a metal back 19 which is an acceleration electrode are formed on the inner surface of the face plate 17, and the face plate 17 faces the substrate 11 with a side wall 16 made of an insulating material interposed therebetween. It is arranged. A high voltage is applied between the substrate 11 and the metal back 19 by a power source (not shown). The rear plate 15, the side wall 16 and the face plate 17 are sealed to each other with frit glass or the like.
The face plate 17 constitutes an envelope (airtight container).

As the atmospheric pressure resistant structure, a thin plate-shaped spacer 20 is provided inside the envelope (airtight container). The spacer 20 is made of a member in which a semiconductive thin film 20b is formed on the surface of an insulating member 20a. The spacers 20 are arranged in the Y direction in the required number and at a necessary interval to maintain the atmospheric pressure resistance performance. Face plates 17 arranged in parallel
The inner surface of the metal back 19 and the surface of the column wiring 14 on the substrate 11 are sealed with frit glass or the like. Also,
The semiconductive thin film 20b is electrically connected to the metal back 19 on the inner surface of the face plate 17 and the column-direction wiring 14 on the substrate 11.

FIG. 27 is a plan view of an essential part of a multi-electron beam source formed on the substrate 11 of the display panel shown in FIG.

The multi-electron beam source comprises an insulating substrate 11 made of a glass substrate or the like, and an M insulating layer wiring 13 and an N column wiring 14 at least at the intersections of both wirings with an interlayer insulating layer. (Not shown) are electrically separated and wired in a matrix. The surface conduction electron-emitting device 12 is electrically connected as a cold cathode device between each row wiring 13 and each column wiring 14.
The row-direction wirings 13 and the column-direction wirings 14 are drawn out to the outside of the envelope (airtight container) as the external terminals Dx1 to Dxm and Dy1 to Dyn shown in FIG. 25, respectively.

Also in each of the embodiments described below, the surface conduction electron-emitting device 12 of the type used in the above-mentioned embodiment and having the electron-emitting portion in the conductive fine particle film between the electrodes is used.
A multi-electron beam source having N × M pieces (N = 3072, M = 1024), matrix wiring (see FIGS. 25 and 27) by M row-direction wirings and N column-direction wirings was used.

First, the conductive film made of fine particles is N × M.
Substrates 11 ′ that were individually arranged in a matrix and arranged were manufactured by the same method (see FIG. 22) as described in the above-mentioned embodiment. However, in each of the embodiments described below, the stacking order at the intersection of the row-directional wiring 13 and the column-directional wiring 14 is the row-directional wiring 13, the interlayer insulating layer, and the column-directional wiring 14 from the bottom. .

(Example 2-1) In this example, a display panel having the spacers 20 shown in FIG. Hereinafter, a detailed description will be given with reference to FIGS. First, as described above, a plurality of conductive films (films for forming electron emission portions)
Are arranged in a matrix, and the arranged substrate 11 is fixed to the rear plate 15. Next, of the surface of the insulating member 20a made of soda lime glass, a spacer 20 (height 5 mm) having four semi-conductive thin films 20b made of tin oxide formed on four surfaces exposed in the envelope (airtight container). , A plate thickness of 200 μm, and a length of 20 mm) were fixed at equal intervals on the column-direction wiring 14 on the substrate 11 ′ in parallel with the column-direction wiring 14. After that, a face plate 17 having a fluorescent film 18 and a metal back 19 attached to the inner surface is arranged 5 mm above the substrate 11 ′ via a side wall 16, and the rear plate 15, the face plate 17, the side wall 16 and the spacer 20 are joined together. The part was fixed.

Fluorescent film 18 which is an image forming member
4A adopts the shape shown in FIG. 4A, and the stripe-shaped black conductors 21a located between the stripe-shaped color phosphors 21a extending in the Y direction and the color phosphors 21a.
b was used.

The joint between the substrate 11 'and the rear plate 15,
The joint between the rear plate 15 and the side wall 16 and the joint between the face plate 17 and the side wall 16 are sealed by applying frit glass (not shown) and baking in air at 400 ° C. to 500 ° C. for 10 minutes or more. did.

The spacer 20 is provided on the column-direction wiring 14 (line width 300 μm) on the substrate 11 ′ side, on the face plate 1
7 side, on the surface of the metal back 19 and in the region of the black conductor 21b (line width 300 μm) of the phosphor film 18 (FIG. 4).
(See (A)) via a conductive frit glass (not shown) mixed with a conductive material such as a metal, and placed in an atmosphere of 400
By firing at 10 to 500 ° C. for 10 minutes or more, sealing and electrical connection were made.

The spacers 20 are formed by ion-plating tin oxide having a thickness of 1000 [angstroms] as a semiconductive thin film 20b on an insulating member 20a made of cleaned soda lime glass by using an electron beam method. Was formed in an argon / oxygen atmosphere. At this time, the surface resistance value of the semiconductive thin film 20b was about 10 9 [Ω / □].

When performing the above-mentioned sealing, each color phosphor 21a and each conductive film for forming the above-mentioned electron-emitting portion formed on the substrate 11 'must correspond to each other. The rear plate 15, the face plate 17, and the spacer 20 were sufficiently aligned.

The atmosphere inside the envelope (airtight container) completed as described above is exhausted by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the external terminals Dx1 ...
Through Dxm and Dy1 to Dyn, a voltage is applied to each of the above-mentioned conductive films for forming the electron emitting portion, and the conductive film for forming the electron emitting portion is energized (energized forming process) to form a conductive film. An electron-emitting portion was formed in each, and a multi-electron beam source having a plurality of surface-conduction electron-emitting devices as the cold cathode device 12 arranged in a matrix as shown in FIGS. 25 and 27 was produced. The energization forming process was performed by applying the voltage having the waveform shown in FIG.

Next, an exhaust pipe (not shown) was heated by a gas burner at a vacuum degree of about 10 to the 6th power [Torr] to weld and seal the envelope (airtight container).

Finally, a getter process was performed in order to maintain the degree of vacuum after sealing.

FIG. 25 and FIG. 26 configured as described above.
In the image display device using the display panel as shown in (1), the cold cathode device (surface conduction electron-emitting device) 12 receives the scanning signal and the modulation signal through the terminals Dx1 to Dxm and Dy1 to Dyn outside the container. Electrons are emitted by applying each from the signal generating means shown in the figure, and a high voltage is applied to the metal back 19 through the high-voltage terminal Hv to accelerate the emitted electron beam and collide the electrons with the fluorescent film 18.
An image was displayed by exciting and emitting the phosphor 21a (see FIG. 4A). The applied voltage Va to the high voltage terminal Hv is 3 [kV] to 10 [kV], and the wirings 13 and 14
The applied voltage Vf between them was set to 14 [V].

At this time, a light emitting spot row is formed two-dimensionally at equal intervals including the light emitting spots due to the electrons emitted from the cold cathode device (surface conduction electron-emitting device) 12 located near the spacer 20. It was possible to display a color image with good color reproducibility. This means that even if the spacer 20 is installed, the disturbance of the electric field that affects the electron orbit does not occur.

(Embodiment 2-2) This embodiment differs from the above-mentioned embodiment 2-1 in that the semiconductive thin film 20b of the spacer 20 shown in FIG. 26 is oxidized to a thickness of 1000 [angstrom]. The point is that tin is formed into a film in an oxygen atmosphere by ion plating using the electron beam method. At this time, the surface resistance value of the semiconductive thin film 20b is
It was about 10 12 [Ω / □]. A display panel similar to that in Example 2-1 was produced except for the above points.

In the image display device using the display panel provided with the spacers 20, each cold cathode device (surface conduction electron-emitting device) 12 has external terminals Dx1 to Dxm, Dx.
Electrons are emitted by applying a scanning signal and a modulation signal from a signal generating means (not shown) through y1 to Dyn, and a high voltage is applied to the metal back 19 through a high voltage terminal Hv to accelerate the emitted electron beam. An image was displayed by causing electrons to collide with the fluorescent film 18 to excite and emit light from the fluorescent body 21a (see FIG. 4A). In addition,
The applied voltage Va to the high voltage terminal Hv is 3 [kV] to 10
[KV], the applied voltage Vf between the wirings 13 and 14 is 14
It was set to [V].

At this time, it was confirmed from the comparison with the case of the image display device for the comparative experiment using the spacer 20 without the semiconductive thin film 20b that the antistatic effect was obtained also in this example. .

(Embodiment 2-3) This embodiment is different from the above-mentioned embodiment 2-1 in that the semiconductive thin film 20b of the spacer 20 shown in FIG. 26 is oxidized to a thickness of 1000 angstroms. The point is that tin was deposited in an argon atmosphere by ion plating using the electron beam method. At this time, the surface resistance value of the semiconductive thin film 20b was about 10 7 [Ω / □]. Further, in this embodiment, the metal back 19 is not provided, and instead, the transparent electrode made of the ITO film is provided between the face plate 17 and the fluorescent film 18. The ITO film is composed of the black conductor 21b (see FIG. 4A) and the high voltage terminal Hv (see FIG. 25).
(See) and electrical connection. A display panel similar to that in Example 2-1 was produced except for the above points.

In the image display device using the display panel provided with the spacer 20, the cathode element (surface conduction electron-emitting device) 12 in each example is provided with terminals Dx1 to Dxm, D outside the container.
Electrons are emitted by applying a scanning signal and a modulation signal from a signal generating means (not shown) through y1 to Dyn, and the high voltage terminal Hv is applied to the transparent electrode made of the ITO film.
An image is displayed by accelerating the emitted electron beam by applying a high voltage through, causing electrons to collide with the phosphor film 18, and exciting and emitting the phosphor 21a (see FIG. 4A). The voltage Va applied to the high voltage terminal Hv is 1 [kV].
Hereinafter, the applied voltage Vf between the wirings 13 and 14 is 14 [V].
And

At this time, two-dimensionally formed light emission spot rows are formed at equal intervals, including the light emission spots due to the electrons emitted from the cold cathode device 12 located near the spacer 20, and the color image is clear and has good color reproducibility. I was able to display. This means that even if the spacer 20 is installed, the disturbance of the electric field that affects the electron orbit does not occur.

(Embodiment 2-4) This embodiment is different from the above-mentioned embodiment 2-1 in that the semiconductive thin film 20b of the spacer 20 shown in FIG. ] The tin oxide of] was deposited by ion plating using an electron beam method. At this time, the surface resistance value of the semiconductive thin film 20b was about 10 5 [Ω / □]. Further, in this embodiment, the metal back 19 is not provided, and instead, the transparent electrode made of the ITO film is provided between the face plate 17 and the fluorescent film 18. The ITO film was arranged so as to be electrically connected to the black conductor 21b (see FIG. 4A) and the high voltage terminal Hv. In addition, the phosphor 2
A phosphor for low-speed electron beam was used as 1a (see FIG. 4A). Further, the height of the spacer 20 and the substrate 11
The distance between the face plate 17 and the face plate 17 was 1 mm.
A display panel similar to that in Example 2-1 was produced except for the above points.

In the image display device using the display panel provided with the spacers 20, each cold cathode device (surface conduction electron-emitting device) 12 has terminals outside the container Dx1 to Dxm, Dx.
Electrons are emitted by applying a scanning signal and a modulation signal from a signal generating means (not shown) through y1 to Dyn, and the high voltage terminal Hv is applied to the transparent electrode made of the ITO film.
An image is displayed by accelerating the emitted electron beam by applying a high voltage through, causing electrons to collide with the phosphor film 18, and exciting and emitting the phosphor 21a (see FIG. 4A). The applied voltage Va to the high voltage terminal Hv is 10 [V].
The applied voltage Vf between the wirings 13 and 14 was set to 14 [V] or around 100 [V].

At this time, a light emitting spot row is formed two-dimensionally at equal intervals including the light emitting spots due to the electrons emitted from the cold cathode device 12 near the spacer 20, and a clear and good color reproducible color image is obtained. I was able to display. This means that even if the spacer 20 is installed, the disturbance of the electric field that affects the electron orbit does not occur.

The image display device of each of the embodiments (2-1) to (2-4) described above has the following effects.

First, since the charging to be prevented occurs on the surface of the spacer 20, it is sufficient for the spacer 20 to have an antistatic function only on the surface thereof. Therefore, in the above embodiment, the insulating member 20a is used as the member forming the spacer 20, and the semiconductive thin film 20b is formed on the surface of the insulating member 20a. As a result, it was possible to realize the spacer 20 which has a low resistance value sufficient to neutralize the charge on the surface of the spacer 20 and has a leak current amount that does not extremely increase the power consumption of the entire device. That is, a thin and large-area image forming apparatus was obtained without impairing the low heat generation, which is a characteristic of a cold cathode such as a surface conduction electron-emitting device.

Next, as the shape of the spacer 20, as shown in FIG.
Since a flat plate-shaped member having a uniform cross-sectional shape with respect to the normal direction of the substrate 11 and the face plate 17 of Nos. 5 and 26, the spacer 20 itself does not disturb the electric field. Therefore, the spacer 20 is
Since the spacers 20 and the cold cathode devices 12 can be arranged close to each other as long as the electron orbits from the are not blocked, the cold cathode devices 12 can be arranged at a high density in the Y direction orthogonal to the spacers 20. Moreover, since the leak current does not flow into the insulating member 20a occupying most of the cross section of the spacer 20, the substrate 1
1 or spacer 20 for face plate 17
It was possible to suppress the leak current to a small level without making any ingenuity such as making the points sharp and joining.

The fluorescent film 18 has the shape shown in FIG. 4A, and is provided between the striped color phosphors (R, G, B) 21a extending in the Y direction and the color phosphors 21a. Since the stripe-shaped black conductor 21b is used, the brightness of the displayed image is not impaired even when the cold cathode devices 12 are arranged in high density in the Y direction.

Further, each spacer 20 is electrically connected on one column-direction wiring 14 on the substrate 10 side, and unnecessary electrical coupling between wirings on the substrate 11 can be avoided. .

Further, by providing the desired semiconductive thin film 20b, the above effect is exhibited, and the spacer 20 according to the present invention which does not require a complicated additional structure for preventing charging is provided.
By applying to an image display device using a multi-electron beam source having a simple matrix wiring by a surface conduction electron-emitting device proposed by the present applicant, a thin device capable of forming a high-quality image with a simple device configuration. A large area image forming apparatus can be provided.

Further, another embodiment according to the present invention will be described below.

FIG. 28 is a partially broken perspective view of still another embodiment of the display panel according to the present invention.

The display panel shown in FIG. 28 differs from the above-described embodiments in that the spacer 20 has a columnar shape.

In FIG. 28, the rear plate 15 includes
A substrate 11 on which a plurality of cold cathode devices (surface conduction electron-emitting devices) 12 are arranged in a matrix wiring is fixed. A fluorescent film 18 and a metal back 17 which is an acceleration electrode are formed on the inner surface of the face plate 17, and the face plate 17 is provided with the substrate 11 and a side wall 16 made of an insulating material between them. It is arranged opposite. A high voltage is applied between the substrate 11 and the metal back 19 by a power source (not shown). These rear plates 1
5, the side wall 16 and the face plate 17 are sealed to each other with frit glass or the like, and the rear plate 15, the side wall 16 and the face plate 17 constitute an envelope (airtight container).

As an atmospheric pressure resistant structure, a columnar spacer 20 is provided inside the envelope (airtight container). This columnar spacer 20 is also made of a member in which a semi-conductive thin film is formed on the surface of an insulating member, as in the above-described embodiment, and the number of spacers required for maintaining the atmospheric pressure resistance performance is the same. The metal back 19 on the inner surface of the face plate 17 and the surface of the row wiring 13 on the substrate 11 are sealed with frit glass or the like. The semiconductive thin film is electrically connected to the metal back 19 on the inner surface of the face plate 17 and the row wiring 13 on the substrate 11.

The other structure is described above (Example 1-
1) to (Example 1-4), the description thereof will be omitted.

First, the conductive film made of fine particles is N × M.
The individual substrates 11 arranged in matrix and arranged were manufactured by the same method (see FIG. 22) as in the above-described embodiment.

(Embodiment 3) In this embodiment, as shown in FIG.
A display panel in which the spacer 20 shown in 8 is arranged was manufactured. First, as described above, a plurality of conductive films (electron emission portion forming films) were matrix-wired, and the arranged substrate was fixed to the rear plate 15. Next, among the surfaces of the insulating member made of soda lime glass, a columnar spacer 20 (height 5 mm, radius 100 μm) in which a semiconductive thin film made of tin oxide is formed on the surface exposed in the envelope. Were fixed on the row wiring 13 of the substrate 11 at equal intervals. Then substrate 1
5mm above 1 and fluorescent film 18 and metal back 1 on the inner surface
9 is disposed through the side wall 16, and the rear plate 15, the face plate 17,
The joint between the side wall 16 and the spacer 20 was fixed.

Frit glass (not shown) is applied to the joint between the substrate 11 and the rear plate 15, the joint between the rear plate 15 and the side wall 16, and the joint between the face plate 17 and the support frame 16, and the frit glass (not shown) is applied in the atmosphere for 400 It was sealed by baking at 10 to 500 ° C for 10 minutes or more.

On the substrate 11 side, the spacer 20 is provided on the row-direction wiring 13 (line width 300 μm) and on the face plate 17
On the side, on the surface of the metal back 19 and in the area of the black conductor (line width 300 μm), a conductive frit glass (not shown) mixed with a conductive material such as metal is placed, and the temperature is 400 By firing at 10 to 500 ° C. for 10 minutes or more, sealing and electrical connection were made.

The spacer 20 is made of a cleaned soda lime glass insulating member, on which tin oxide having a thickness of 1000 [angstrom] is formed as a semiconductive thin film by argon plating by ion plating using an electron beam method.
The film was formed in an oxygen atmosphere. At this time, the surface resistance value of the semiconductive thin film was about 10 9 [Ω / □].

When performing the above-mentioned sealing, it is necessary to associate each color phosphor 21a with each conductive film for forming the above-mentioned electron-emitting portion formed on the substrate 11 '. The rear plate 15, the face plate 17, and the spacer 20 were sufficiently aligned.

The atmosphere in the envelope (airtight container) completed as described above is exhausted by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the external terminals Dx1 ...
Through Dxm and Dy1 to Dyn, a voltage is applied to each of the above-mentioned conductive films for forming the electron emitting portion, and the conductive film for forming the electron emitting portion is energized (energized forming process) to form a conductive film. An electron emitting portion was formed in each, and a multi-electron beam source having a plurality of surface conduction electron-emitting devices as the cold cathode device 12 arranged in a matrix as shown in FIG. 28 was produced. The energization forming process was performed by applying the voltage having the waveform shown in FIG.

Next, an exhaust pipe (not shown) was heated by a gas burner to be welded at a vacuum degree of about 10 −6 [Torr] to seal the envelope (airtight container).

Finally, a getter process was performed in order to maintain the degree of vacuum after sealing.

In the image display device using the display panel as shown in FIG. 28 configured as described above, each cold cathode device (surface conduction electron-emitting device) 12 has terminals outside the container Dx1 to Dxm. , Dy1 to Dyn, electrons are emitted by applying a scanning signal and a modulation signal from a signal generating means (not shown), and a high voltage is applied to the metal back 19 through a high voltage terminal Hv to accelerate the emitted electron beam. Then, an electron was made to collide with the fluorescent film 18 to excite / emit the fluorescent substance, thereby displaying an image. The applied voltage Va to the high voltage terminal Hv is 3 [kV] to 10 [kV].
V], the applied voltage Vf between the wirings 13 and 14 is 14 [V]
And

At this time, two-dimensionally formed light emission spot rows including light emission spots due to the electrons emitted from the cold cathode device (surface conduction electron-emitting device) 12 located near the spacer 20 are clearly formed. It was possible to display a color image with good color reproducibility. This means that even if the spacer 20 is installed, the disturbance of the electric field that affects the electron orbit does not occur.

The image display device of Example 3 described above has the following effects. First, since the charge to be prevented is generated on the surface of the spacer 20, the spacer 20
As a result, it is sufficient to have the antistatic function only on the surface portion. Therefore, in this embodiment, an insulating member is used as the member forming the spacer 20, and the semiconductive thin film is formed on the surface of the insulating member. As a result, it was possible to realize the spacer 20 which has a low resistance value sufficient to neutralize the charge on the surface of the spacer 20 and has a leak current amount that does not extremely increase the power consumption of the entire device. That is, a thin and large-area image forming apparatus was obtained without impairing the low heat generation, which is a characteristic of a cold cathode such as a surface conduction electron-emitting device.

Next, as the shape of the spacer 20, the substrate 1
Since a columnar shape whose cross-sectional shape is uniform with respect to the normal direction of 1 and the face plate 17 is adopted, the electric field is not disturbed by the spacer 20 itself. Therefore, unless the spacer 20 blocks the electron orbit from the cold cathode device (surface conduction electron-emitting device) 12, the spacer 20
Since the cold cathode devices 12 can be arranged close to each other, the cold cathode devices 12 can be arranged at high density in the X direction and the Y direction. Moreover, since the leak current does not flow into the insulating member that occupies most of the cross section of the spacer 20, it is necessary to make the spacer 20 sharp with respect to the substrate 11 or the face plate 17 so as to join the spacer 20. It was possible to suppress to a small leak current.

Further, each spacer 20 is electrically connected to one row-direction wiring 13 on the substrate 11 side, and unnecessary electrical coupling between wirings on the substrate 11 can be avoided. .

Further, by providing a desired semiconductive thin film, the above effect is exhibited, and the spacer 20 according to the present invention which does not require a complicated additional structure for preventing charging is provided on the surface proposed by the present applicant. By applying a conduction electron-emitting device to an image display device that uses a multi-electron beam source with simple matrix wiring, a thin and large-area image forming device that can form high-quality images with a simple device configuration is provided. did it.

Further, the embodiment described in detail below is different from the embodiments described above in that the side wall 16 is installed as close as possible to the cold cathode device 12 as shown in FIG. 29 and FIG. The difference is that a semiconductive thin film 16b is formed on the inner surface side of 16.

FIG. 29 is a perspective view in which a part of the display panel used in the image display device of the embodiment described below is cut away, and FIG. 30 is a sectional view of the main part of the display panel shown in FIG. (Part of the EE ′ cross section).

29 and 30, the rear plate 15 is fixed to the substrate 11 on which a plurality of cold cathode devices (surface conduction electron-emitting devices) 12 are arranged in matrix. A fluorescent film 18 and a metal back 19 which is an acceleration electrode are formed on the inner surface of the face plate 17, and the face plate 17 is arranged to face the substrate 11 with a side wall 16 interposed therebetween. Board 11
A high voltage is applied between the metal back 19 and the metal back 19 by a power source (not shown). The rear plate 15, the side wall 16 and the face plate 17 are sealed to each other with frit glass or the like, and the rear plate 15, the side wall 16 and the face plate 17 constitute an envelope (airtight container). As the atmospheric pressure resistant structure, a thin plate-shaped spacer 20 is provided inside the envelope.

The spacer 20 is made of a member in which the semiconductive thin film 20b is formed on the surface of the insulating member 20a, and the spacers are provided in the required number and at the necessary intervals for maintaining the atmospheric pressure resistance. The metal plates 19 are arranged in parallel with the X direction, and are sealed on the metal back 19 on the inner surface of the face plate 17 and the surfaces of the row wirings 13 on the substrate 11 with frit glass or the like.
Further, the semiconductive thin film 20b is formed on the metal back 19 on the inner surface of the face plate 17 and the row-direction wiring 1 on the substrate 11.
3 is electrically connected.

The side wall 16 is made of a member having a semiconductive thin film 16b formed on the inner surface side of an insulating member. The semi-conductive thin film 16b is formed on the inner surface of the rear plate 15 (not shown) and on the inner surface of the face plate 17 by the high voltage terminal H.
It is electrically connected to a lead wire (not shown) connected to v.

Since the other structure is the same as that of the other embodiments described above, the description thereof will be omitted.

Also in each of the embodiments described below, the surface conduction electron-emitting device 12 of the type having an electron-emitting portion in the conductive fine particle film between the electrodes, which is used in the above embodiment, is used.
A multi-electron beam source having N × M pieces (N = 3072, M = 1024), matrix wiring (see FIG. 29) by M row-direction wirings and N column-direction wirings was used.

First, the conductive film made of fine particles is N × M.
Substrates 11 arranged in matrix and arranged were manufactured by the same method (see FIG. 22) as described in the above-mentioned embodiment.

(Embodiment 4) In this embodiment, as shown in FIG.
A display panel in which the spacer 20 shown in FIG. 0 and the semiconductive thin film 16b are arranged was produced. Details will be described below with reference to FIGS. 29 and 30. First, as described above, a plurality of conductive films (electron emission part forming films) matrix wiring were arranged, and the arranged substrate 11 was fixed to the rear plate 15. Next, of the surface of the insulating member 20a made of soda lime glass, a spacer 20 (height 5 m) having a semiconductive thin film 20b made of tin oxide formed on four surfaces exposed in the envelope (airtight container).
m, plate thickness 200 μm, length 20 mm) were fixed on the row-direction wirings 13 on the substrate 11 at equal intervals in parallel with the row-direction wirings 13. Thereafter, a face plate 17 having a fluorescent film 18 and a metal back 19 attached to the inner surface thereof is placed 5 mm above the substrate 11 via a side wall 16, and a joint portion of the rear plate 15, the face plate 17, the side wall 16 and the spacer 20 is arranged. Fixed. The side wall 16 does not block the electron trajectories emitted from each cold cathode device 12 unless the substrate 11 is blocked.
And the face plate 17
The fluorescent film 18 was placed as close as possible.

The joint between the substrate 11 and the rear plate 15 is
Apply frit glass (not shown) and 400 ℃ in air
Sealing was performed by firing at 500 to 500 ° C. for 10 minutes or more.

The spacer 20 is provided on the row wiring 13 (line width 300 μm) on the substrate 11 side, on the metal back 19 surface on the face plate 17 side, and on the fluorescent film 1.
8 is placed in a black conductor (line width 300 μm) region through a conductive frit glass (not shown) mixed with a conductive material such as metal, and baked in the atmosphere at 400 ° C. to 500 ° C. for 10 minutes or more. By doing so, sealing and electrical connection were also made.

Also, the joint between the rear plate 15 and the side wall 16 and the joint between the face plate 17 and the side wall 16 are arranged through a conductive frit glass (not shown) mixed with a conductive material such as metal, and the atmosphere is maintained. 400 ℃ to 50 ℃
By firing at 0 ° C. for 10 minutes or more, sealing and electrical connection were made. The semiconductive thin film 164b of the side wall 16 was electrically connected to the ground potential on the side of the rear plate 15 and electrically connected to the high voltage terminal Hv on the side of the face plate 17.

The spacer 20 is composed of the semiconductive thin film 2 formed on the insulating member 20a made of cleaned soda lime glass.
A film of tin oxide having a thickness of 1000 angstroms as 0b was formed in an argon / oxygen atmosphere by ion plating using an electron beam method. At this time, the surface resistance value of the semiconductive thin film 20b is about 10 9 [Ω /
□]

The side wall 16 is formed on the inner surface of an insulating member made of cleaned soda lime glass and has a semiconductive thin film 16b.
As a thickness of 1000 [angstrom] tin oxide,
The film was formed in an argon / oxygen atmosphere by ion plating using the electron beam method. At this time, the surface resistance value of the semiconductive thin film 16b was about 10 9 [Ω / □].

Fluorescent film 18 which is an image forming member
24, each color phosphor (R, G, B) 2
1a adopts a stripe shape extending in the Y direction, and the black conductors 21b are arranged so as to separate not only R, G, and B of each color phosphor 21a but also each pixel in the Y direction. A film was used, and the spacer 20 was disposed in the black conductor 21b region (line width 300 μm) parallel to the X direction via the metal back 19.

At the time of performing the above-mentioned sealing, each color phosphor 21a and each conductive film 4 (see FIG. 22 (h)) for forming the above-mentioned electron-emitting portion arranged on the substrate 11 'are formed. Therefore, the rear plate 15, the face plate 17, and the spacer 20 are sufficiently aligned.

The atmosphere inside the envelope (airtight container) completed as described above is exhausted by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the external terminals Dx1 ...
A voltage is applied to each of the above-mentioned conductive films 4 for forming the electron emitting portion through Dxm and Dy1 to Dyn, and the conductive film 4 for forming the electron emitting portion is energized (energized forming process) to obtain the electroconductivity. An electron-emitting portion was formed on each of the films 4, and a multi-electron beam source having a plurality of surface-conduction electron-emitting devices as the cold cathode device 12 arranged in a matrix was prepared as shown in FIG. The energization forming process was performed by applying the voltage having the waveform shown in FIG.

Next, the exhaust pipe (not shown) was heated by a gas burner at a vacuum degree of about 10 <-6> [Torr] to weld and seal the envelope (airtight container).

Finally, a getter process was performed in order to maintain the degree of vacuum after sealing.

In the image display device using the display panel as shown in FIGS. 29 and 30 completed as described above, each cold cathode device (surface conduction electron-emitting device) 12 has a terminal Dx1 outside the container. Through Dxm and Dy1 through Dyn, electrons are emitted by applying a scanning signal and a modulation signal from a signal generating means (not shown), and a high voltage is applied to the metal back 19 through a high voltage terminal Hv. To accelerate electrons to collide with the fluorescent film 18,
An image was displayed by exciting and emitting each color phosphor (R, G, B in FIG. 24). The applied voltage Va to the high-voltage terminal Hv is 3 [kV] to 10 [kV], the wirings 13, 1
The applied voltage Vf between 4 was set to 14 [V].

At this time, two-dimensionally formed light emission spot rows are formed at equal intervals including the light emission spots due to the electrons emitted from the cold cathode element 12 located near the spacer 20 and the side wall 16, and the vivid and color reproducibility is obtained. I was able to display a good color image. This means that the spacer 20 is installed and the sidewall 16
It is shown that, even if is arranged close to the cold cathode device 12, the disturbance of the electric field that affects the electron orbit did not occur.

The image display device of the fourth embodiment described above has the following effects in addition to the effects described in each of the above-described embodiments.

First, since the charge to be prevented is generated on the surface of the side wall 16 arranged close to the cold cathode element 12 on the substrate 11, it is sufficient for the side wall 16 to have an antistatic function only on its surface portion. is there. Therefore, an insulating member was used as the member forming the side wall 16, and the semiconductive thin film 16 was formed on the surface of the insulating member. As a result, the side wall 16 having a low resistance value sufficient to neutralize the charge on the surface of the side wall 16 and having a leakage current amount that does not extremely increase the power consumption of the entire device can be realized. That is, a thin and large-area image forming apparatus was obtained without impairing the low heat generation, which is a characteristic of a cold cathode such as a surface conduction electron-emitting device.

Further, by using the side wall 16 described above, the peripheral area of the image display area can be made small, and the entire apparatus can be made compact.

Further, another embodiment according to the present invention will be described below.

FIG. 31 is a partially broken perspective view of still another embodiment of the display panel according to the present invention.

The display panel shown in FIG. 31 is different from the above-described embodiments in that the spacer 20 is in contact with the substrate 11 (for example, the row wiring 13), and the spacer 20 and the face plate 17 are different from each other. Side (eg metal back 1
The difference is that an abutting member 40 for improving mechanical fixing and electrical connection is provided at an abutting portion with 9).

In FIG. 31, the rear plate 15 includes
A substrate 11 on which a plurality of cold cathode devices (surface conduction electron-emitting devices) 12 are arranged and arranged in a matrix is fixed. A fluorescent film 18 and a metal back 19 which is an acceleration electrode are formed on the inner surface of the face plate 17, and the face plate 17 faces the substrate 11 with a side wall 16 made of an insulating material interposed therebetween. It is arranged. A high voltage is applied between the substrate 11 and the metal back 19 by a power source (not shown). The rear plate 15, the side wall 16 and the face plate 17 are sealed to each other with frit glass or the like, and the rear plate 15, the side wall 16 and the face plate 17 form an envelope (airtight container).

Further, inside the envelope (airtight container), a thin plate-like spacer 20 is provided as an atmospheric pressure resistant structure. In this embodiment, the spacer 20 is the insulating member 2
0a, a semiconductive thin film 20b is formed on the entire surface, and a conductive film (hereinafter referred to as a "spacer electrode") 20c is formed on the surface facing the substrate 11 side and the face plate 17 side. 7 (see FIG. 7C), they are arranged in parallel to the row-direction wirings 13 at a necessary number and a necessary interval for atmospheric pressure resistance. In the spacer 20, good electrical continuity is obtained between the semiconductive thin film 20b and the spacer electrode 20c due to the contact therebetween.

The spacer 20 is fixed to the metal back 19 on the inner surface of the face plate 17 and the surface of the row-direction wiring 13 on the substrate 11 via the contact member 40. In addition, the semiconductive thin film 20b on the surface of the spacer 20
The face plate 17 through the contact member 40.
Are electrically connected to the metal back 19 on the inner surface and the row wiring 13 on the substrate 11.

Also in each of the embodiments described below, the surface conduction electron-emitting device 12 of the type used in the above-mentioned embodiment and having an electron-emitting portion in the conductive fine particle film between the electrodes is used.
A multi-electron beam source having N × M pieces (N = 3072, M = 1024) and matrix wiring (see FIG. 31) by M row-direction wirings and N column-direction wirings was used.

Since the method of manufacturing the multi-electron beam source is the same as that of the above-mentioned embodiment, its detailed description will be omitted below.

(Embodiment 5-1) In this embodiment, as the contact member 40 shown in FIG. 31, a contact member having both a mechanical fixing function and an electrical connecting function is used. In addition, FIG.
As the spacer 20 shown in FIG.
A spacer having a semiconductive thin film 20b and a spacer electrode 20c was used. 32A and 32B are respectively a sectional view taken along the line FF ′ and a line G in FIG. 31 of the image display device of the present embodiment.
-G 'sectional drawing is shown.

The spacer 20 used in this embodiment (see FIG.
(See (c)) was produced by the following method. First, tin oxide having a thickness of 1000 [angstrom] is formed as a semiconductive thin film 20b on the entire surface of the cleaned insulating member 20a made of soda lime glass in an argon / oxygen atmosphere by ion plating using an electron beam method. The film was formed inside. At this time, the surface resistance value of the semiconductive thin film 20b was about 10 9 [Ω / □]. Next, as the spacer electrode 20c, Ti having a thickness of 20 [angstrom] is used.
Then, Au having a thickness of 1000 [angstrom] was sequentially laminated by sputtering to form a film. In the above steps, the semiconductive thin film 20b and the spacer electrode 20c
The electrical connection of was also obtained.

Next, the airtight container was manufactured by the following procedure.

First, the spacer 20 produced by the above method.
(Height 5 mm, plate thickness 200 μm, length 20 mm) is placed on the surface of the metal back 19 formed on the face plate 17 via a conductive frit glass mixed with a conductive material such as metal, that is, a contact member 40. , 400 ℃ in air
It was mechanically fixed and electrically connected by baking and sealing at 10 to 500 ° C. for 10 minutes or more. The fluorescent film 18 used in this example is the fluorescent film shown in FIG. 4 (A), and the spacer 20 is in the region (line width 300 μm) of the black conductor 21b of the fluorescent film 18. , And the metal back 19 is disposed therebetween.

Next, frit glass glass (not shown) is applied to the joint between the substrate 11 and the rear plate 15, the joint between the rear plate 15 and the side wall 16, and the joint between the face plate 17 and the side wall 16, The film was sealed by baking in air at 400 ° C. to 500 ° C. for 10 minutes or more. At this time, the spacer electrode 20c on the substrate 11 side is also connected to the row-direction wiring 1
3 (line width 300 μm) is placed through a conductive frit glass mixed with a conductive material such as metal, that is, the contact member 40, and baked at 400 ° C. to 500 ° C. for 10 minutes or more in the atmosphere.
Mechanical sealing and electrical connection were made by sealing.

At the time of performing the above-mentioned sealing, each color phosphor 21a
Since the cold cathode device (surface conduction electron-emitting device) 12 (see FIG. 4A) has to correspond to each other, the substrate 1
1, the rear plate 15, the face plate 17, and the spacer 20 were sufficiently aligned.

In the airtight container produced as described above, vacuum exhaustion, forming treatment, activation treatment, sealing, getter treatment and the like were carried out in the same manner as in the above-mentioned examples.

In the image display device using the display panel completed as described above, each cold cathode element (surface conduction electron-emitting device) 12 has terminals Dx1 to Dxm, Dy1 to Dx outside the container.
Electrons are emitted by applying a scanning signal and a modulation signal from a signal generating means (not shown) through yn, and a high voltage is applied to the metal back 19 through a high voltage terminal Hv to accelerate the emitted electron beam to cause fluorescence. An image was displayed by causing electrons to collide with the film 18 and exciting and emitting light of each color phosphor 21a. The applied voltage Va to the high voltage terminal Hv is 3 [kV] to 10 [kV], each wiring 13,
The applied voltage Vf between 14 was set to 14 [V].

At this time, a light emitting spot row is formed two-dimensionally at equal intervals including the light emitting spots due to the electrons emitted from the cold cathode device (surface conduction electron-emitting device) 12 located near the spacer 20. It was possible to display a color image with good color reproducibility. This means that even if the spacer 20 is installed, the disturbance of the electric field that affects the electron orbit does not occur.

(Embodiment 5-2) In this embodiment, as the contact member 40 shown in FIG. 31, a mechanical fixing portion 40a and an electrical connecting portion 40b are provided as separate means as shown in FIG. It differs from Example 5-1 in that a contact member was used. 33A and 33B are respectively FF ′ sectional view and GG ′ sectional view of FIG. 31 of the image display device of this embodiment.

The spacer 20 used in this embodiment (see FIG.
(See (c)) was produced by the following method. First, tin oxide having a thickness of 1000 [angstrom] is formed as a semiconductive thin film 20b on the entire surface of the cleaned insulating member 20a made of soda lime glass in an argon / oxygen atmosphere by ion plating using an electron beam method. The film was formed inside. At this time, the surface resistance value of the semiconductive thin film 20b was about 10 9 [Ω / □]. Next, as the spacer electrode 20c, Ti having a thickness of 20 [angstrom] is used.
Then, Au having a thickness of 1000 [angstrom] was sequentially laminated by sputtering to form a film. In the above steps, the semiconductive thin film 20b and the spacer electrode 20c
The electrical connection of was also obtained.

Next, the airtight container was manufactured by the following procedure.

First, the spacer 20 produced by the above method.
(Height 5 mm, plate thickness 200 μm, length 20 mm) is provided on the surface of the metal back 19 formed on the face plate 17 with a frit glass forming the mechanical fixing portion 40a and a conductive material such as metal forming the electrical connecting portion 40b. Were placed through a conductive frit glass mixed with the above, and baked and sealed at 400 ° C. to 500 ° C. for 10 minutes or more in the air to perform mechanical fixing and electrical connection. The fluorescent film 18 used in this example is the fluorescent film shown in FIG. 4 (A), and the spacer 20 is in the region (line width 300 μm) of the black conductor 21b of the fluorescent film 18. , And the metal back 19 is disposed therebetween.

Next, a frit glass glass (not shown) is applied to the joint portion between the substrate 11 and the rear plate 15, the joint portion between the rear plate 15 and the side wall 16 and the joint portion between the face plate 17 and the side wall 16 in the atmosphere. At 400 ° C to 50
It was sealed by baking at 0 ° C. for 10 minutes or more. At this time,
The spacer electrode 20c on the substrate 11 side is also connected to the row-direction wiring 13
On the (line width of 300 μm), a frit glass forming the mechanical fixing portion 40a and a conductive frit glass mixed with a conductive material such as a metal forming the electrical connecting portion 40b are placed, and the temperature is 400 ° C. to 500 ° C. in the atmosphere. Firing at ℃ for 10 minutes or more
Mechanical sealing and electrical connection were made by sealing.

At the time of performing the above-mentioned sealing, each color phosphor 21a
Since the cold cathode device (surface conduction electron-emitting device) 12 (see FIG. 4A) has to correspond to each other, the substrate 1
1, the rear plate 15, the face plate 17, and the spacer 20 were sufficiently aligned.

In the airtight container produced as described above, vacuum exhaustion, forming treatment, activation treatment, sealing, getter treatment and the like were carried out in the same manner as in the above-mentioned examples.

In the image display device using the display panel completed as described above, each cold cathode device (surface conduction electron-emitting device) 12 has terminals Dx1 to Dxm and Dy1 to Dx outside the container.
Electrons are emitted by applying a scanning signal and a modulation signal from a signal generating means (not shown) through yn, and a high voltage is applied to the metal back 19 through a high voltage terminal Hv to accelerate the emitted electron beam to cause fluorescence. An image was displayed by causing electrons to collide with the film 18 and exciting and emitting light of each color phosphor 21a. The applied voltage Va to the high voltage terminal Hv is 3 [kV] to 10 [kV], each wiring 13,
The applied voltage Vf between 14 was set to 14 [V].

At this time, two-dimensionally formed light emission spot rows are formed at equal intervals including the light emission spots due to the electrons emitted from the cold cathode device (surface conduction electron-emitting device) 12 located near the spacer 20. It was possible to display a color image with good color reproducibility. This means that even if the spacer 20 is installed, the disturbance of the electric field that affects the electron orbit does not occur.

(Embodiment 5-3) In this embodiment, as the contact member 40 shown in FIG. 31, as shown in FIG. 34, after mechanical fixing, the contact surface and a part of its side surface are fixed. A structure in which a conductive material is formed for electrical connection is used. On the other hand, on the substrate 11 side, an abutting member having both a mechanical fixing function and an electrical connecting function was used. The conductive material for electrical connection on the face plate 17 side was formed during the airtight container forming step. 34A and 34B are respectively a FF 'sectional view and a GG' sectional view of FIG. 31 of the image display device of the present embodiment.

The spacer 20 used in this embodiment (see FIG.
(See (c)) was produced by the following method. First, tin oxide having a thickness of 1000 [angstrom] is formed as a semiconductive thin film 20b on the entire surface of the cleaned insulating member 20a made of soda lime glass in an argon / oxygen atmosphere by ion plating using an electron beam method. The film was formed inside. At this time, the surface resistance value of the semiconductive thin film 20b was about 10 9 [Ω / □]. Next, as the spacer electrode 20c, Ti having a thickness of 20 [angstrom] is used.
Then, Au having a thickness of 1000 [angstrom] was sequentially laminated by sputtering to form a film. In the above steps, the semiconductive thin film 20b and the spacer electrode 20c
The electrical connection of was also obtained.

Next, the airtight container was manufactured by the following procedure.

First, the spacer 20 produced by the above method.
(Height 5 mm, plate thickness 200 μm, length 20 mm) is arranged on the surface of the metal back 19 formed on the face plate 17 via the frit glass forming the mechanical fixing portion 40a, and the temperature is 400 ° C. to 500 ° C. Mechanical fixation was performed by baking and sealing at 10 ° C. for 10 minutes or more. Next, using an applicator such as a dispenser, the Ag paste forming the electrical connection portion 40b is applied across the surface of the mechanical fixing portion 40a, the metal back 19 surface, and the semiconductive film 20b, and in the air. An electrical connection was made by firing. Also in this embodiment, the phosphor film shown in FIG. 4 (A) is used, and the spacer 20 has the metal back 19 in the region (line width 300 μm) of the black conductor 21b of the phosphor film 18. Placed through.

Next, frit glass glass (not shown) is applied to the joint between the substrate 11 and the rear plate 15, the joint between the rear plate 15 and the side wall 16, and the joint between the face plate 17 and the side wall 16, 400 ° C to 5 in the atmosphere
It was sealed by baking at 00 ° C. for 10 minutes or more. At this time, the spacer electrode 20c on the substrate 11 side is also connected to the row-direction wiring 1
3 (line width 300 μm) is arranged through a conductive frit glass, that is, an abutting member 40 in which a conductive material such as a metal having a mechanical fixing function and a metal having an electrical connection function is mixed, Mechanical fixation and electrical connection were performed by baking and sealing at 400 ° C. to 500 ° C. for 10 minutes or more in the atmosphere.

[0307] When the above-mentioned sealing is performed, each color phosphor 21a
Since the cold cathode device (surface conduction electron-emitting device) 12 (see FIG. 4A) has to correspond to each other, the substrate 1
1, the rear plate 15, the face plate 17, and the spacer 20 were sufficiently aligned.

In the airtight container produced as described above, vacuum exhaustion, forming treatment, activation treatment, sealing, getter treatment and the like were performed in the same manner as in the above-mentioned examples.

In the image display device using the display panel completed as described above, each cold cathode element (surface conduction electron-emitting element) 12 has terminals Dx1 to Dxm and Dy1 to Dx outside the container.
Electrons are emitted by applying a scanning signal and a modulation signal from a signal generating means (not shown) through yn, and a high voltage is applied to the metal back 19 through a high voltage terminal Hv to accelerate the emitted electron beam to cause fluorescence. An image was displayed by causing electrons to collide with the film 18 and exciting and emitting light of each color phosphor 21a. The applied voltage Va to the high voltage terminal Hv is 3 [kV] to 10 [kV], each wiring 13,
The applied voltage Vf between 14 was set to 14 [V].

At this time, a light emitting spot row is formed two-dimensionally at equal intervals including the light emitting spots due to the electrons emitted from the cold cathode device (surface conduction electron-emitting device) 12 located near the spacer 20. It was possible to display a color image with good color reproducibility. This means that even if the spacer 20 is installed, the disturbance of the electric field that affects the electron orbit does not occur.

In the image display devices of (Example 5-1) to (Example 5-3) described above, (Example 1-1)
In addition to the effects described in (Example 1-4), the following effects are achieved.

First, the semiconductive thin film 20b formed on the spacer 20 is formed on the substrate 11 and the face plate 1.
Need to be electrically connected to the spacer electrode 2
By providing 0c, the potential of the entire contact surface of the spacer 20 can be stably maintained at a constant value, and therefore, the semiconductive thin film 20b electrically connected to the spacer electrode 20c.
The potential distribution of can be more reliably maintained at a desired value.

In addition, by disposing the contact member 40 having a mechanical fixing function and an electrical connecting function, both the mechanical fixing and electrical connecting functions of the spacer 20 can be made more reliable. it can.

Further, although it is only necessary to provide one electrical connecting portion, providing at least three electrical connecting portions for each spacer 20 enables more reliable electrical connection.

Further, by providing a means for forming the electrical connection portion after the mechanical fixing portion is formed, the degree of freedom in the manufacturing process of the display panel is increased, so that the reliability is improved.
It is possible to exhibit effects such as reduction of manufacturing time and reduction of manufacturing cost.

(Embodiment 6) FIG. 35 shows an image display apparatus configured to display image information provided from various image information sources such as television broadcasting on the image forming apparatus of the present invention. It is a figure for showing an example. It should be noted that when the display device receives a signal including both video information and audio information, such as a television signal, it naturally reproduces audio at the same time as displaying video. A description of circuits, speakers, etc. relating to reception, separation, reproduction, processing, storage, etc. of audio information not directly related to the above will be omitted.

Each part will be described below along the flow of the image signal.

First, the TV signal receiving circuit 513 is a circuit for receiving a TV image signal transmitted using a wireless transmission system such as radio waves or spatial optical communication. The system of the TV signal to be received is not particularly limited, and various systems such as NTSC system, PAL system and SECAM system may be used. In addition, a TV signal (for example, a so-called high-definition TV such as the MUSE method) including a larger number of scanning lines than these is used in a display panel using the image forming apparatus of the present invention, which is suitable for a large area and a large number of pixels. Fifty
It is a suitable signal source for taking advantage of 0. The TV signal received by the TV signal receiving circuit 513 is the decoder 504.
Is output to

The image TV signal receiving circuit 512 is a circuit for receiving a TV image signal transmitted using a wired transmission system such as a coaxial cable or an optical fiber. Similar to the TV signal receiving circuit 513, the system of the TV signal to be received is not particularly limited, and the TV signal received by this circuit is also output to the decoder 504.

Further, the image input interface circuit 51
Reference numeral 1 denotes a circuit for capturing an image signal supplied from an image input device such as a TV camera or an image reading scanner, and the captured image signal is output to the decoder 504.

Also, the image memory interface circuit 5
Reference numeral 10 is a circuit for capturing an image signal stored in a video tape recorder (hereinafter abbreviated as TVR), and the captured image signal is output to the decoder 504.

Further, the image memory interface circuit 5
Reference numeral 09 denotes a circuit for capturing the image signal stored in the video disc, and the captured image signal is output to the decoder 504.

Further, the image memory interface circuit 5
Reference numeral 08 denotes a circuit for capturing an image signal from a device that stores still image data, such as a so-called still image disc. The captured still image data is decoded by the decoder 504.
Is output to

Further, the input / output interface circuit 505
Is a circuit for connecting the display device to an external computer, a computer network, or an output device such as a printer. It is of course possible to input and output image data and character / graphic information, and in some cases, input and output control signals and numerical data between the CPU 506 of the display device and the outside.

The image generation circuit 507 is for display based on image data or character / graphic information input from the outside through the input / output interface circuit 505 or image data or character / graphic information output from the CPU 506. This is a circuit for generating image data. Inside this circuit, for example, a rewritable memory for accumulating image data and character / graphic information, a read-only memory that stores image patterns corresponding to character codes, a processor for performing image processing, etc. The circuit necessary for image generation is built in.

The display image data generated by the image generation circuit 507 is output to the decoder 504, but in some cases, it can be output to an external computer network or printer via the input / output interface circuit 505. .

Further, the CPU 506 mainly performs operations related to operation control of the display device and generation, selection and editing of a display image.

For example, a control signal is output to the multiplexer 503 to appropriately select or combine image signals to be displayed on the display panel. At that time, a control signal is generated to the display panel controller 502 in accordance with the image signal to be displayed, and the image display frequency, the scanning method (for example, interlaced or non-interlaced), the number of scanning lines in one screen, etc. are displayed. The operation of the device is controlled appropriately.

Image data or character / graphic information is directly output to the image generation circuit 507, or an external computer or memory is accessed via the input / output interface circuit 505 to generate image data or character / graphic information. Enter.

It should be noted that the CPU 506 may of course be involved in work for other purposes. For example, it may be directly related to a function of generating and processing information, such as a personal computer or a word processor.

Alternatively, as described above, the computer may be brought into contact with an external computer network through the input / output interface circuit 505, and work such as numerical calculation may be performed in cooperation with an external device.

The input unit 514 is used by the user to input commands, programs, data, etc. to the CPU 506. For example, in addition to a keyboard and a mouse,
It is possible to use various input devices such as joystick, bar code reader, and voice recognition device.

Further, the decoder 504 has the image generation circuit 5
07 to the various image signals input from the TV signal receiving circuit 513, the three primary color signals, or the luminance signal and I signal, Q
It is a circuit for inverse conversion into a signal. Note that it is desirable that the decoder 504 has an image memory therein, as indicated by the dotted line in the figure. This is to handle a television signal that requires an image memory for reverse conversion, such as the MUSE method. In addition, the provision of the image memory makes it easy to display a still image, or cooperates with the image generation circuit 507 and the CPU 506 to facilitate image processing and editing such as image thinning, interpolation, enlargement, reduction, and composition. This is because the advantage of being able to perform

Also, the multiplexer 503 is the CPU 50.
The display image is appropriately selected on the basis of the control signal input from S6. That is, the multiplexer 503 selects a desired image signal from the inversely converted image signals input from the decoder 504 and outputs it to the drive circuit 501. In that case, by switching and selecting image signals within one screen display time, it is possible to divide one screen into a plurality of areas and display different images depending on the areas, as in a so-called multi-screen television. .

Further, the display panel controller 5
Reference numeral 02 is a circuit for controlling the operation of the drive circuit 501 based on a control signal input from the CPU 506.

First, regarding the basic operation of the display panel 500, for example, a signal for controlling the operation sequence of a drive power source (not shown) for the display panel 500 is output to the drive circuit 501.

Further, regarding the driving method of the display panel 500, for example, a signal for controlling the screen display frequency and the scanning method (for example, interlace or non-interlace) is output to the drive circuit 501.

In some cases, control signals relating to image quality adjustment such as brightness, contrast, color tone and sharpness of a display image may be output to the drive circuit 501.

The drive circuit 501 is a circuit for generating a drive signal to be applied to the display panel 500, and based on the image signal input from the multiplexer 503 and the control signal input from the display panel controller 502. It works.

The functions of the respective parts have been described above. With the configuration illustrated in FIG. 35, the display panel 5 displays image information input from various image information sources in this display device.
00 can be exemplified. That is, various image signals such as television broadcasts are transmitted to the decoder 50.
After being inversely transformed in 4, the multiplexer 503 appropriately selects and inputs to the drive circuit 501. On the other hand, the display controller 502 generates a control signal for controlling the operation of the drive circuit 501 according to the image signal to be displayed. The drive circuit 501 applies a drive signal to the display panel 500 based on the image signal and the control signal. Accordingly, the display panel 500
The image is displayed at. These series of operations are C
It is totally controlled by the PU 506.

Further, in this display device, the decoder 5
The image memory built in 04, the image generation circuit 507, and the CPU 506 are involved, so that not only the selected one of the plurality of image information is displayed, but also the image information to be displayed is enlarged or reduced, for example. Image processing such as rotation, movement, edge enhancement, thinning, interpolation, color conversion, image aspect ratio conversion, and image editing such as composition, deletion, connection, replacement, and fitting are also possible. Is. Further, in the description of this embodiment,
Although not particularly mentioned, a dedicated circuit for processing and editing voice information may be provided as in the above-mentioned image processing and image editing.

Therefore, the display device is a display device for television broadcasting, a terminal device for video conference, an image editing device for handling still images and moving images, a computer terminal device, an office terminal device such as a word processor, and a game. It is possible to combine the functions of a machine with one unit, and has a very wide range of applications for industrial or consumer use.

Note that FIG. 35 shows only an example of the configuration of the display device using the image forming apparatus according to the present invention.
It goes without saying that the present invention is not limited to this. For example, of the components shown in FIG. 35, circuits relating to functions unnecessary for the purpose of use may be omitted. On the contrary, further constituent elements may be added depending on the purpose of use. For example, when the display device is applied as a videophone, a TV camera, a voice microphone, an illuminator,
It is preferable to add a transmitting / receiving circuit including a modem to the components.

In this display device, the depth of the display device can be reduced because the image forming apparatus according to the present invention can be easily thinned. In addition, since it is easy to increase the screen size, has high brightness, and has excellent viewing angle characteristics, the present display device can display a highly realistic image with high visibility.

(Other Examples) The present invention is not limited to the surface conduction electron-emitting device as long as it is a cold cathode electron-emitting device, and can be applied to any electron-emitting device. As a specific example, Japanese Patent Application Laid-Open No. 63-274047 by the present applicant
Field emission type (FE type) in which a pair of electrodes facing each other are formed along a substrate surface forming an electron source, as described in Japanese Patent Publication No.
Electron-emitting device, metal / insulating layer / metal type (MIM type)
There is.

The present invention can also be applied to an image forming apparatus using an electron source other than the simple matrix type. For example, in an image forming apparatus for selecting a surface conduction electron-emitting device by using a control electrode as described in Japanese Patent Application Laid-Open No. 2-257551 by the present applicant, between a face plate and a control electrode, or an electron source. And the case where the support member as described above is used between the control electrodes and the like.

Further, in the above-mentioned embodiments, the spacers and the side walls are the ones in which the semi-conductive film is formed on the surface of the insulating member, but the spacers and the side walls themselves are semi-conductive. Good. In this case, of course, it is not necessary to form a semiconductive film on the surface of the spacer or the side wall.

Further, according to the idea of the present invention, it is not limited to the image forming apparatus suitable for display, but as an alternative light emitting source such as a light emitting diode of an optical printer including a photosensitive drum and a light emitting diode. The image forming apparatus described above can also be used. Further, at this time, by appropriately selecting the above-mentioned M row-direction wirings and N column-direction wirings, it can be applied not only as a linear light emitting source but also as a two-dimensional light emitting source. In this case, the image forming member is not limited to the substance that directly emits light, such as the phosphor used in the above-mentioned embodiments, and a member that forms a latent image by charging with electrons may be used. it can.

Further, according to the idea of the present invention, the present invention can be applied to the case where the member to be irradiated with the electrons emitted from the electron source is a member other than the image forming member, such as an electron microscope. . Therefore, the present invention may also take the form of an electron beam generator that does not specify the irradiated member.

[0350]

Since the present invention is configured as described above, it has the following effects.

The electron beam apparatus of the present invention has the semiconductive film electrically connected to the electron source and the electrodes, or at least two electrodes to which different potentials are applied, on the surface of the spacer. As a result, the spacers are prevented from being charged, and the orbits of the electrons emitted from the electron-emitting device can be prevented from shifting.

The contact of the spacer with other members is
For example, a member having both a mechanical fixing function and an electrical connecting function, or an abutting member composed of two types of members separately carrying out both functions, is used to achieve good electrical connection of the spacer, The mechanical bonding strength can be maintained.

Further, the surface resistance value of the semiconductive film is set to 10 5
By setting it to 10 12 [Ω / □], the resistance value is low enough to neutralize the electrostatic charge on the spacer surface, and the leak current amount is such that the power consumption of the entire device is not extremely increased. It is possible to realize a stopped electron beam device. That is, the small amount of heat generation, which is a feature of the cold cathode type electron-emitting device, is not impaired. Therefore, when this is applied to the image forming apparatus,
It is possible to obtain a thin and large-area image forming apparatus.

Further, by using a cold cathode type electron-emitting device as the electron-emitting device, it is possible to construct a large-sized electron beam apparatus which saves power and has a high response speed. Among them, in particular, the surface conduction electron-emitting device has a simple device structure and a plurality of devices can be easily arranged. Therefore, by using the surface conduction electron-emitting device as the electron emitting device, the structure is simple. Moreover, a large-sized electron beam apparatus can be achieved.

Further, by arranging a plurality of electron-emitting devices in a matrix with a plurality of row-direction wirings and a plurality of column-direction wirings, a large number of electron-emitting devices can be provided by giving appropriate drive signals in the row and column directions. Since the electron emission element can be selected and the electron emission amount can be controlled, basically, the electron source can be easily formed on one substrate without adding another control electrode. In this case, the semiconductive film on the spacer surface is electrically connected to the row-direction wirings or the column-direction wirings, whereby unnecessary electrical coupling between the wirings on the electron source can be avoided. Further, by forming the spacer into a rectangular shape and arranging it so that its longitudinal direction and the wiring are parallel to each other, the spacer can be arranged without blocking the electron orbit from the electron-emitting device.

In particular, when the image forming apparatus of the present invention is applied to an image forming apparatus that irradiates an electron with a target to form an image, the trajectory of electrons emitted from the electron-emitting device is stabilized as described above. Therefore, it is possible to form a good image with no deviation in the light emitting position.

[Brief description of drawings]

FIG. 1 is an area A in the vicinity of a spacer of the image forming apparatus shown in FIG.
It is a sectional view taken on line -A '.

FIG. 2 is a partially cutaway perspective view of the image forming apparatus according to the present invention.

3 is a plan view of an essential part of an electron source of the image forming apparatus shown in FIG.

FIG. 4 is a diagram for explaining a configuration of a fluorescent film.

5 is a diagram for explaining the trajectories of electrons and scattering particles in the image forming apparatus shown in FIG. 1, and is a diagram of an electron emitting portion near a spacer as seen from the Y direction.

6 is a diagram for explaining the trajectory of electrons in the image forming apparatus shown in FIG.
It is the figure seen from the direction.

FIG. 7 is a sectional view of a spacer provided in the image forming apparatus according to the present invention.

FIG. 8 is a cross-sectional view showing a case where a spacer is provided with a contact member.

FIG. 9 is a schematic plan view and a cross-sectional view showing the structure of a surface conduction electron-emitting device according to the present invention.

FIG. 10 is a schematic plan view and a cross-sectional view showing a configuration of a surface conduction electron-emitting device according to the present invention.

FIG. 11 is a diagram showing an example of a method of manufacturing a surface conduction electron-emitting device according to the present invention in the order of steps.

FIG. 12 is a diagram showing an example of an energization forming voltage waveform.

FIG. 13 is a diagram showing an example of a voltage waveform for energization activation.

FIG. 14 is a schematic view showing an example of a configuration of a vertical surface conduction electron-emitting device according to the present invention.

FIG. 15 is a schematic view showing another example of the configuration of the vertical surface conduction electron-emitting device according to the present invention.

FIG. 16 is a diagram showing an example of a method of manufacturing a vertical surface conduction electron-emitting device according to the present invention in the order of steps.

FIG. 17 is a diagram for explaining basic characteristics of the surface conduction electron-emitting device.

FIG. 18 is a block diagram showing a schematic configuration of a drive circuit of the image forming apparatus according to the present invention.

FIG. 19 is a partial circuit diagram of an electron source of the image forming apparatus according to the present invention.

FIG. 20 is a diagram showing an example of an original image for explaining the driving method of the image forming apparatus according to the present invention.

FIG. 21 is a partial circuit diagram of an electron source to which a drive voltage of the image forming apparatus according to the present invention is applied.

FIG. 22 is a diagram sequentially showing steps in an example of the method for manufacturing the electron source of the image forming apparatus according to the present invention.

FIG. 23 is a plan view of an example of a mask used when forming a thin film for forming an electron emitting portion.

FIG. 24 is a diagram for explaining another configuration example of the fluorescent film.

FIG. 25 is a partially cutaway perspective view of another embodiment of the image forming apparatus according to the present invention.

FIG. 26 is a cross-sectional view taken along the line CC ′ in the vicinity of the spacer of the image forming apparatus shown in FIG. 25.

27 is a plan view of relevant parts of an electron source of the image forming apparatus shown in FIG. 25.

FIG. 28 is a partially cutaway perspective view of still another embodiment of the image forming apparatus according to the present invention.

FIG. 29 is a partially cutaway perspective view of still another embodiment of the image forming apparatus according to the present invention.

30 is a cross-sectional view taken along the line EE ′ in the vicinity of the spacer and the support frame of the image forming apparatus shown in FIG.

FIG. 31 is a partially cutaway perspective view of still another embodiment of the image forming apparatus according to the present invention.

32A and 32B are FF ′ cross-sectional views and GG ′ cross-sectional views of an example of a spacer mounting structure of the image forming apparatus illustrated in FIG. 31.

FIG. 33 is a FF ′ cross-sectional view and a GG ′ cross-sectional view of another example of the spacer mounting structure of the image forming apparatus illustrated in FIG. 31.

34 is a sectional view taken along line FF ′ and GG ′ of still another example of the spacer mounting structure of the image forming apparatus shown in FIG. 31.
It is sectional drawing.

FIG. 35 is a block diagram of an example of an image display device using the image forming apparatus according to the present invention.

FIG. 36 is a plan view of a conventional surface conduction electron-emitting device.

FIG. 37 is a cross-sectional view of a conventional FE element.

FIG. 38 is a cross-sectional view of a conventional MIM element.

[Explanation of symbols]

 1, 11, 11 'Substrate 2, 3 Element electrode 4 Conductive film 5 Electron emission part 12 Cold cathode element (Surface conduction type electron emission element) 13 Row direction wiring 14 Column direction wiring 15 Rear plate 16 Side wall 17 Face plate 18 Fluorescence Membrane 19 Metal back 20 Spacer 20a Insulating member 20b Semi-conductive thin film 20c Conductive film (spacer electrode) 21a Phosphor 21b Black conductor 40 Contact member 40a Mechanical fixing part 40b Electrical connection part

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshihisa Sano 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc.

Claims (32)

[Claims]
1. An electron source having an electron-emitting device, an electrode for controlling electrons emitted from the electron source, a target irradiated with electrons emitted from the electron source, the electron source and the electrode. An electron beam device having a spacer disposed between the spacer and the spacer, the spacer having a semi-conductive film on a surface thereof, and the semi-conductive film is electrically connected to the electron source and the electrode. An electron beam device characterized by the above.
2. The spacer has a conductive film on a contact surface with the electron source and the electrode, and the conductive film is electrically connected to the semiconductive film. The electron beam apparatus described.
3. The electron beam apparatus according to claim 1, wherein a contact member is provided at a contact portion between the spacer and each of the electron source and the electrode.
4. The abutting member mechanically fixes the spacer to each of the electron source and the electrode, and electrically connects the semiconductive film on the spacer surface to each of the electron source and the electrode. The electron beam apparatus according to claim 3, wherein the electron beam apparatus is a member that also has a physical connection function.
5. The first member having a mechanical fixing function between the spacer and each of the electron source and the electrode, the contact member, a semiconductive film on the surface of the spacer, the electron source, and the electron source. Second which has the function of electrical connection with each of the electrodes
The electron beam apparatus according to claim 3, further comprising:
6. The electron source has a plurality of electron-emitting devices connected by wiring, and the semiconductive film on the surface of the spacer is electrically connected to the wiring and the electrode. The electron beam apparatus according to claim 1, 2, 3, 4 or 5.
7. The electron source has a plurality of electron-emitting devices connected by wiring, the spacer is arranged between the wiring and the electrode, and a semiconductive film of the spacer. 6. The electron beam apparatus according to claim 1, wherein the wiring is electrically connected to the electrode.
8. The electron source has a plurality of electron-emitting devices connected by wiring, and the spacer is arranged between the wiring and the electrode such that a longitudinal direction thereof is parallel to the wiring. 6. The electron beam apparatus according to claim 1, wherein the spacer is a rectangular spacer, and a semi-conductive film on the surface of the spacer is electrically connected to the wiring and the electrode. .
9. The electron source has a plurality of electron-emitting devices connected by wiring, the electrode is disposed on the target, and the semiconductive film on the spacer surface is connected to the wiring. The electron beam apparatus according to claim 1, wherein the electron beam apparatus is electrically connected to the electrode.
10. The electron source has a plurality of electron-emitting devices connected by wiring, the electrode is disposed on the target, and the spacer is provided between the wiring and the electrode. 7. The electron beam apparatus according to claim 1, wherein the semiconductive film on the surface of the spacer is electrically connected to the wiring and the electrode.
11. The electron source has a plurality of electron-emitting devices connected by wiring, the electrode is disposed on the target, and the spacer is a rectangular spacer having a long side. It is arranged between the wiring and the electrode so that the direction and the wiring are parallel to each other, and the semiconductive film on the spacer surface is electrically connected to the wiring and the electrode. The electron beam apparatus according to claim 1, 2, 3, 4 or 5.
12. The electron source has a plurality of electron-emitting devices arranged in a matrix by a plurality of row-direction wirings and a plurality of column-direction wirings, and the semiconductive film on the spacer surface is the row-direction wirings. Alternatively, the electron beam apparatus according to claim 1, which is electrically connected to the column-direction wiring and the electrode.
13. The electron source has a plurality of electron-emitting devices arranged in a matrix with a plurality of row-direction wirings and a plurality of column-direction wirings, and the spacer includes the row-direction wirings or the column-direction wirings and the spacers. The semiconductive film on the surface of the spacer, which is disposed between the electrode and the electrode, is electrically connected to the row-direction wiring or the column-direction wiring and the electrode. Or the electron beam apparatus according to 5.
14. The electron source has a plurality of electron-emitting devices arranged in a matrix with a plurality of row-direction wirings and a plurality of column-direction wirings, and the spacer is a rectangular spacer, and a longitudinal direction thereof. The row-direction wirings or the column-direction wirings are arranged between the electrodes so that the row-direction wirings or the column-direction wirings are parallel to each other, and the semiconductive film on the spacer surface is the row-direction wirings. The electron beam apparatus according to claim 1, wherein the wiring or column-direction wiring is electrically connected to the electrode.
15. The electron source has a plurality of electron-emitting devices arranged in a matrix with a plurality of row-direction wirings and a plurality of column-direction wirings, and the electrodes are arranged on the target, The electron beam apparatus according to claim 1, wherein the semiconductive film on the spacer surface is electrically connected to the row-direction wiring or the column-direction wiring and the electrode.
16. The electron source has a plurality of electron-emitting devices arranged in a matrix by a plurality of row-direction wirings and a plurality of column-direction wirings, and the electrodes are arranged on the target, The spacer is a rectangular spacer and is arranged between the row-direction wiring or column-direction wiring and the electrode so that the longitudinal direction thereof is parallel to the row-direction wiring or the column-direction wiring, The semiconductive film on the surface of the spacer is electrically connected to the row-direction wiring or the column-direction wiring and the electrode.
The electron beam device according to 2, 3, 4 or 5.
17. The electron beam apparatus according to claim 1, wherein the electrode is an accelerating electrode that accelerates electrons emitted from the electron source.
18. An electron beam apparatus having an electron source having an electron emitting element, an electrode for controlling electrons emitted from the electron source, and a target irradiated with electrons emitted from the electron source, A spacer is provided between at least two electrodes to which different potentials are applied, the spacer has a semi-conductive film on its surface, and a contact portion between each of the spacer and the electrode is provided. An electron beam apparatus having an abutting member, wherein the semiconductive film on the surface of the spacer is electrically connected to each of the electrodes.
19. The electron beam according to claim 18, wherein the spacer has a conductive film on a contact surface with the electrode, and the conductive film is electrically connected to the semiconductive film. apparatus.
20. The electron beam apparatus according to claim 18, wherein the electron source has a plurality of electron-emitting devices connected by wiring, and one of the electrodes is the wiring.
21. The electron beam apparatus according to claim 18, wherein one of the electrodes is an electrode provided on the target.
22. The electron source has a plurality of electron-emitting devices arranged in a matrix with a plurality of row-direction wirings and a plurality of column-direction wirings, and one of the electrodes has one of the row-direction wirings or the column-direction wirings. The electron beam device according to claim 18, which is a wiring.
23. The electron beam apparatus according to claim 18, wherein one of the electrodes is an acceleration electrode that accelerates electrons emitted from the electron source.
24. The contact member is a member having both a mechanical fixing function for the spacer and each of the electrodes and an electrical connection function for the semi-conductive film on the spacer surface and each of the electrodes. Any one of claims 18 to 23
An electron beam apparatus according to item.
25. The abutting member electrically connects the first member having a function of mechanically fixing the spacer and each of the electrodes, and the semiconductive film on the surface of the spacer and each of the electrodes. And a second member for carrying the material.
The electron beam apparatus according to any one of 3 above.
26. The semiconductive film is 10 5 [Ω / □].
The electron beam apparatus according to any one of claims 1 to 25, having a surface resistance value of -10 12 [Ω / □].
27. The electron beam apparatus according to claim 1, wherein a plurality of the spacers are arranged.
28. The electron beam apparatus according to claim 1, wherein the electron-emitting device is a cold cathode device.
29. The electron beam apparatus according to claim 1, wherein the electron-emitting device is an electron-emitting device having a conductive film including an electron-emitting portion between electrodes.
30. The electron beam apparatus according to claim 1, wherein the electron-emitting device is a surface conduction electron-emitting device.
31. The image forming apparatus according to claim 1, wherein the target is an image forming apparatus that forms an image by irradiating the target with electrons emitted from the electron-emitting device according to an input signal. Line device.
32. The electron beam apparatus according to claim 31, wherein the target is a phosphor.
JP15796295A 1994-06-27 1995-06-23 Electron beam equipment Expired - Fee Related JP3305166B2 (en)

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JP14463694 1994-06-27
JP6-144636 1994-10-28
JP26521794 1994-10-28
JP6-265217 1994-10-28
JP15796295A JP3305166B2 (en) 1994-06-27 1995-06-23 Electron beam equipment

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JP15796295A JP3305166B2 (en) 1994-06-27 1995-06-23 Electron beam equipment
CN 03122565 CN1271675C (en) 1994-06-27 1995-06-23 Electron beam equipment and image display equipment
EP98202951A EP0886294B1 (en) 1994-06-27 1995-06-27 Electron beam apparatus
EP19950304514 EP0690472B1 (en) 1994-06-27 1995-06-27 Electron beam apparatus and image forming apparatus
AT95304514T AT179549T (en) 1994-06-27 1995-06-27 Electronic beam and imaging device
DE1995631798 DE69531798T2 (en) 1994-06-27 1995-06-27 electron beam device
AU23290/95A AU685270B2 (en) 1994-06-27 1995-06-27 Electron beam apparatus and image forming apparatus
CA 2152740 CA2152740C (en) 1994-06-27 1995-06-27 Electron beam apparatus and image forming apparatus
DE1995609306 DE69509306T2 (en) 1994-06-27 1995-06-27 Electron beam device and imaging device
AT98202951T AT250278T (en) 1994-06-27 1995-06-27 Electron device
CN95107638A CN1115710C (en) 1994-06-27 1995-06-27 Electron beam apparatus and image forming apparatus
KR1019950017764A KR100220216B1 (en) 1994-06-27 1995-06-28 Electron beam apparatus and image forming apparatus
US08/914,618 US5760538A (en) 1994-06-27 1997-08-19 Electron beam apparatus and image forming apparatus
US09/045,681 US6274972B1 (en) 1994-06-27 1998-03-23 Electron beam apparatus and image forming apparatus
US10/640,269 USRE40103E1 (en) 1994-06-27 2003-08-14 Electron beam apparatus and image forming apparatus

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AT (2) AT250278T (en)
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DE69531798T2 (en) 2004-07-01
KR960002448A (en) 1996-01-26
DE69509306D1 (en) 1999-06-02
US6274972B1 (en) 2001-08-14
AT179549T (en) 1999-05-15
DE69509306T2 (en) 1999-11-04
AU685270B2 (en) 1998-01-15
EP0690472A1 (en) 1996-01-03
EP0690472B1 (en) 1999-04-28
AT250278T (en) 2003-10-15
CA2152740C (en) 2001-09-11
EP0886294A2 (en) 1998-12-23
CN1450583A (en) 2003-10-22
AU2329095A (en) 1996-01-11
US5760538A (en) 1998-06-02
KR100220216B1 (en) 1999-09-01
CN1129849A (en) 1996-08-28
CA2152740A1 (en) 1995-12-28
CN1271675C (en) 2006-08-23
DE69531798D1 (en) 2003-10-23
EP0886294A3 (en) 1999-09-15
EP0886294B1 (en) 2003-09-17
JP3305166B2 (en) 2002-07-22
CN1115710C (en) 2003-07-23

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