JPH0817709A - Charged-particle beam apparatus - Google Patents
Charged-particle beam apparatusInfo
- Publication number
- JPH0817709A JPH0817709A JP14731294A JP14731294A JPH0817709A JP H0817709 A JPH0817709 A JP H0817709A JP 14731294 A JP14731294 A JP 14731294A JP 14731294 A JP14731294 A JP 14731294A JP H0817709 A JPH0817709 A JP H0817709A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- stage
- sample
- sub
- orifice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子ビーム描画装置な
どの荷電粒子ビーム装置に関し、特に、高真空下や特定
ガス雰囲気下で試料の移動を円滑に行うことができる荷
電粒子ビーム装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam apparatus such as an electron beam drawing apparatus, and more particularly to a charged particle beam apparatus capable of smoothly moving a sample under a high vacuum or a specific gas atmosphere.
【０００２】[0002]
【従来の技術】電子ビーム描画装置などでは、試料を真
空に排気された試料室に配置された移動ステージ上に載
せ、ステージを移動させながら試料に対して電子ビーム
により所望の描画を実行している。この試料周辺の真空
度は、試料が汚染しないように高真空（低圧力）とする
ことが望ましい。また、時として試料を特定ガス雰囲気
中で描画などの処理を行うが、この場合も試料室内を高
真空に排気した後、試料室中に特定ガスを入れるように
している。2. Description of the Related Art In an electron beam drawing apparatus or the like, a sample is placed on a moving stage placed in a sample chamber evacuated to a vacuum, and a desired drawing is performed on the sample by an electron beam while moving the stage. There is. The degree of vacuum around the sample is preferably high vacuum (low pressure) so that the sample is not contaminated. Further, sometimes the sample is subjected to processing such as drawing in a specific gas atmosphere, but in this case as well, the specific gas is introduced into the sample chamber after the sample chamber is evacuated to a high vacuum.
【０００３】この試料室内には、ステージを水平方向に
移動させる移動機構が配置されている。例えば、この駆
動機構としては、ステージをレール上に載せ、このステ
ージを試料室の外部に設けられたモータにより回転する
送りネジによって移動させるようにする機構が用いられ
る。A moving mechanism for moving the stage in the horizontal direction is arranged in the sample chamber. For example, as the driving mechanism, a mechanism is used in which the stage is placed on a rail and the stage is moved by a feed screw rotated by a motor provided outside the sample chamber.
【０００４】[0004]
【発明が解決しようとする課題】一般に高真空下でのス
テージ系の十分な稼働には困難さがあり、特に、高真空
下で高速に連続してステージを移動させる運転条件を満
足させることは難しい。また、試料室内を特定ガスの環
境にした場合、ガスの性質によってはそのガスとステー
ジの移動部と固定部との間に設けられる潤滑剤や、ある
いは、ステージの各構成部材とが反応し、凝着などが生
じる。このため相対運動部、特にボールベアリングなど
の滑り運動部を有するステージ系の高い移動精度を維持
することは困難となる。Generally, it is difficult to sufficiently operate a stage system under a high vacuum, and in particular, it is difficult to satisfy the operating condition of moving the stage continuously at a high speed under a high vacuum. difficult. Also, when the sample chamber is set to the environment of a specific gas, depending on the nature of the gas, the lubricant provided between the moving part of the stage and the stationary part, or each component of the stage reacts, Adhesion occurs. For this reason, it becomes difficult to maintain high movement accuracy of the stage system having the relative motion part, particularly the sliding motion part such as the ball bearing.
【０００５】本発明は、このような点に鑑みてなされた
もので、その目的は、高真空や特定ガス雰囲気下に試料
を配置しても高い移動精度で試料ステージを移動させる
ことができる荷電粒子ビーム装置を実現するにある。The present invention has been made in view of the above points, and an object thereof is to charge the sample stage with high movement accuracy even if the sample is placed in a high vacuum or a specific gas atmosphere. It is to realize a particle beam device.
【０００６】[0006]
【課題を解決するための手段】本発明に基づく荷電粒子
ビーム装置は、荷電粒子ビームが照射される試料を載せ
るステージと、ステージを水平方向に移動させるための
移動機構と、試料が入れられる第１のチャンバーと、移
動機構が入れられる第２のチャンバーと、第１のチャン
バー内を排気する第１の排気系と、第２のチャンバー内
を排気する第２の排気系と、第１と第２のチャンバーと
の間に配置され、移動機構によって移動するステージの
一部が貫通する開口を有した隔壁と、開口の周辺部にお
いて隔壁と対向して配置され、ステージと共に移動する
平面板とを有しており、隔壁と平面板との間には第１の
チャンバー内と第２のチャンバー内とを連通する小さな
排気コンダクタンスの間隙が設けられていることを特徴
としている。A charged particle beam apparatus according to the present invention includes a stage on which a sample to be irradiated with a charged particle beam is placed, a moving mechanism for moving the stage in a horizontal direction, and a sample to be placed. No. 1 chamber, a second chamber in which a moving mechanism is inserted, a first exhaust system for exhausting the inside of the first chamber, a second exhaust system for exhausting the inside of the second chamber, and a first and a second exhaust system. A partition wall that is disposed between the two chambers and has an opening through which a part of the stage that moves by the moving mechanism penetrates; and a flat plate that faces the partition wall in the peripheral portion of the opening and that moves with the stage. It is characterized in that a small exhaust conductance gap is provided between the partition wall and the plane plate for communicating the inside of the first chamber with the inside of the second chamber.
【０００７】[0007]
【作用】本発明に基づく荷電粒子ビーム装置は、試料が
入れられる第１のチャンバーと、移動機構が入れられる
第２のチャンバーとの間を小さな排気コンダクタンスの
間隙のみで連通し、差動排気によって第１のチャンバー
内を比較的高い真空度に維持し、第２のチャンバー内を
比較的低い真空度に維持する。In the charged particle beam system according to the present invention, the first chamber, in which the sample is placed, and the second chamber, in which the moving mechanism is placed, communicate with each other with only a small exhaust conductance gap, and the differential evacuation is performed. A relatively high degree of vacuum is maintained in the first chamber, and a relatively low degree of vacuum is maintained in the second chamber.
【０００８】[0008]
【実施例】以下、図面を参照して本発明の実施例を詳細
に説明する。図１は本発明の一実施例の要部を示す図、
図２は図１の部分拡大図である。これらの図において、
１は内部がメインチャンバＭｃとなるメインチャンバ壁
であり、その内部の底部にはベース部材２が配置されて
いる。ベース部材２の上部にはガイド３を介して移動ス
テージ４が取り付けられている。このステージ４は複数
の部材から形成され、下部に位置する部材には雌ネジが
切られており、そこに送りネジ５が螺合されているが、
送りネジ５はメインチャンバＭｃの外部のモータ（図示
せず）に連結している。この送りネジ５をモータによっ
て回転させることにより、ステージ４はベース部材２上
のガイド３に沿って移動することになる。なお、図１で
は説明の簡便さのために、紙面に垂直な方向（Ｘ方向）
にステージ４を移動させる機構のみ図示したが、実際に
は紙面の左右方向（Ｙ方向）にステージ４を移動させる
機構が付加される。このＹ方向の移動を実現するには、
例えばベース部材２をＹ方向に移動させるように、ベー
ス部材２とメインチャンバ壁１との間に、前述のＸ方向
の駆動機構と同様な機構を設ければよい。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a diagram showing a main part of one embodiment of the present invention,
FIG. 2 is a partially enlarged view of FIG. In these figures,
Reference numeral 1 denotes a main chamber wall whose inside is a main chamber Mc, and a base member 2 is arranged at the bottom of the inside. A moving stage 4 is attached to the upper part of the base member 2 via a guide 3. The stage 4 is formed of a plurality of members, and a female screw is cut on the lower member, and the feed screw 5 is screwed into the female screw.
The feed screw 5 is connected to a motor (not shown) outside the main chamber Mc. By rotating the feed screw 5 by the motor, the stage 4 moves along the guide 3 on the base member 2. Note that, in FIG. 1, for ease of explanation, a direction (X direction) perpendicular to the paper surface is shown.
Although only the mechanism for moving the stage 4 is shown in the figure, a mechanism for moving the stage 4 in the left-right direction (Y direction) of the paper surface is actually added. To realize this movement in the Y direction,
For example, a mechanism similar to the drive mechanism in the X direction described above may be provided between the base member 2 and the main chamber wall 1 so that the base member 2 can be moved in the Y direction.
【０００９】メインチャンバＭｃの上部にはサブチャン
バＳｃを形成するサブチャンバ壁６が設けられている。
サブチャンバ壁６の下端部分には、平板状のフランジ７
が設けられている。このフランジ７の中心には比較的大
きな開口８が穿たれており、この開口８を貫通してステ
ージ４がサブチャンバＳｃ内に配置される。ステージ４
には、リング状の平板部材９がフランジ７の下面と対向
して設けられている。固定のフランジ７と移動する平板
部材９との間隔は極めて微小に設定されており、この間
隙によりフランジ７と平板部材９との間にはリング状の
オリフィスＯが形成されている（図では間隙を強調して
いる）。ステージ４の上面には被描画試料１０が載せら
れた試料ホルダーＨが設けられている。A sub chamber wall 6 forming a sub chamber Sc is provided above the main chamber Mc.
A flat plate-shaped flange 7 is provided at the lower end of the sub-chamber wall 6.
Is provided. A relatively large opening 8 is formed in the center of the flange 7, and the stage 4 is arranged in the sub chamber Sc through the opening 8. Stage 4
Is provided with a ring-shaped flat plate member 9 facing the lower surface of the flange 7. The distance between the fixed flange 7 and the moving flat plate member 9 is set to be extremely small, and a ring-shaped orifice O is formed between the flange 7 and the flat plate member 9 due to this gap (a gap in the figure). Is emphasized). A sample holder H on which the sample 10 to be drawn is placed is provided on the upper surface of the stage 4.
【００１０】サブチャンバＳｃを形成するサブチャンバ
壁６の上部には電子ビームカラム１１が真空接手２０を
介して接続されている。図１では電子ビームカラム１１
の内部が一部図示されているが、電子ビームカラム１１
内には、図示されていないが電子銃，コンデンサレン
ズ，対物レンズなどが設けられている。電子ビームカラ
ム１１の中心部には電子ビームの通路を形成するチュー
ブ１２が設けられており、このチューブ１２の底部には
電子ビームが通過する微小な開口を有したオリフィス１
３が取り付けられている。An electron beam column 11 is connected via a vacuum joint 20 to the upper portion of the sub-chamber wall 6 forming the sub-chamber Sc. In FIG. 1, the electron beam column 11
The interior of the electron beam column 11 is shown in part.
Although not shown, an electron gun, a condenser lens, an objective lens and the like are provided therein. A tube 12 that forms a passage of an electron beam is provided at the center of the electron beam column 11, and an orifice 1 having a minute opening through which the electron beam passes is provided at the bottom of the tube 12.
3 is attached.
【００１１】メインチャンバＭｃ内部はメインチャンバ
壁１に設けられた排気口１４を介して排気系（図示せ
ず）により真空に排気される。また、サブチャンバＳｃ
内部は、排気管１５を介して排気系（図示せず）に接続
されており、サブチャンバＳｃ内部は適宜に高真空に排
気される。電子ビームカラム１１内の電子ビームの通路
を形成するチューブ１２内部は排気管１６を介して電子
ビームカラム用の排気系（図示せず）に接続されてい
る。なお、サブチャンバＳｃには試料交換のための管１
７が接続されている。管１７は図示していないが、仕切
弁を介して試料交換室に繋がっている。このような構成
の動作を次に説明する。The inside of the main chamber Mc is evacuated to a vacuum by an exhaust system (not shown) through an exhaust port 14 provided in the main chamber wall 1. In addition, the sub chamber Sc
The inside is connected to an exhaust system (not shown) via an exhaust pipe 15, and the inside of the sub chamber Sc is appropriately evacuated to a high vacuum. The inside of the tube 12 forming the passage of the electron beam in the electron beam column 11 is connected to an exhaust system (not shown) for the electron beam column via an exhaust pipe 16. The subchamber Sc has a tube 1 for sample exchange.
7 is connected. Although not shown, the tube 17 is connected to the sample exchange chamber via a sluice valve. The operation of such a configuration will be described below.
【００１２】被描画試料１０に対する描画は、電子ビー
ムカラム１１内の電子銃から電子ビームを発生させ、こ
の電子ビームをコンデンサレンズや対物レンズによって
細く集束させ、試料１０上に照射する。更に、カラム１
１内に設けられた偏向コイルにより描画パターンに応じ
て電子ビームの偏向を行う。また、この被描画試料１０
への所望パターンの描画は、例えば送りネジ５を図示し
ていないモータによって回転させ、ステージ４を精密に
移動させながら行う。For drawing on the sample 10 to be drawn, an electron beam is generated from an electron gun in the electron beam column 11, the electron beam is finely focused by a condenser lens or an objective lens, and the sample 10 is irradiated. In addition, column 1
The electron beam is deflected according to the drawing pattern by the deflection coil provided in the unit 1. In addition, this drawing sample 10
The drawing of the desired pattern on is performed, for example, by rotating the feed screw 5 by a motor (not shown) and moving the stage 4 precisely.
【００１３】上記描画動作は、電子ビームカラム１１
内、メインチャンバＭｃ内、サブチャンバＳｃ内を真空
排気した後に行う。カラム１１と両チャンバＭｃ，Ｓｃ
内はそれぞれ独立して排気されるが、電子ビームカラム
１１内とサブチャンバＳｃとの間にはオリフィス１３が
設けられており、この両部屋との間の排気コンダクタン
スは著しく低くされている。また、サブチャンバＳｃと
メインチャンバＭｃとの間はフランジ７と平板部材９と
の間のリング状のオリフィスＯによって通じているが、
オリフィスＯのコンダンクタンスは著しく低くされてい
る。この結果、サブチャンバＳｃ内が高い真空度に排気
される。そして、メインチャンバＭｃ内は比較的低い真
空度に維持される。The drawing operation is performed by the electron beam column 11
This is performed after the inside of the main chamber Mc and the inside of the sub chamber Sc are evacuated. Column 11 and both chambers Mc and Sc
Although the inside is exhausted independently, an orifice 13 is provided between the electron beam column 11 and the sub-chamber Sc, and the exhaust conductance between these two chambers is extremely low. Further, the sub-chamber Sc and the main chamber Mc are communicated by the ring-shaped orifice O between the flange 7 and the flat plate member 9,
The conductance of the orifice O is extremely low. As a result, the sub-chamber Sc is evacuated to a high degree of vacuum. Then, the inside of the main chamber Mc is maintained at a relatively low degree of vacuum.
【００１４】ここで図３に図１及び図２の構成の模式図
を示す。図３に示すように、リング状のオリフィスＯの
コンダクタンスをＣ1、オリフィス１３のコンダクタン
スをＣ２とし、メインチャンバＭｃの排気速度をＳ1、
メインチャンバＭｃの到達圧力をＰ1、電子ビームカラ
ム１１の排気速度をＳ2、電子ビームカラム１１の到達
圧力をＰ2、サブチャンバＳｃの排気速度をＳ0、サブチ
ャンバＳｃの到達圧力をＰ0、サブチャンバＳｃ内の放
出ガス量をｑとする。FIG. 3 shows a schematic diagram of the configuration shown in FIGS. 1 and 2. As shown in FIG. 3, the conductance of the ring-shaped orifice O is C 1 , the conductance of the orifice 13 is C 2, and the exhaust speed of the main chamber Mc is S 1 .
The ultimate pressure of the main chamber Mc is P 1 , the exhaust speed of the electron beam column 11 is S 2 , the ultimate pressure of the electron beam column 11 is P 2 , the exhaust speed of the sub-chamber Sc is S 0 , the ultimate pressure of the sub-chamber Sc is P 2. 0 , and the amount of released gas in the sub chamber Sc is q.
【００１５】この結果、電子ビームカラム１１からサブ
チャンバＳｃに、リング状のオリフィスＯを通って流入
するガス量はＰ1・Ｃ1、となる。また、メインチャンバ
ＭｃからサブチャンバＳｃに、リング状のオリフィスＯ
を通って流入するガス量はＰ 2・Ｃ2となる。従って、サ
ブチャンバＳｃ内の到達圧力Ｐ0は次のように表すこと
ができる。As a result, from the electron beam column 11 to the sub
Flow into chamber Sc through ring-shaped orifice O
The amount of gas used is P1・ C1, Becomes. Also the main chamber
Ring orifice O from Mc to sub-chamber Sc
The amount of gas flowing in through 2・ C2Becomes Therefore,
Ultimate pressure P inside the chamber Sc0Is expressed as
Can be.
【００１６】Ｐ0＝（Ｐ1・Ｃ1＋Ｐ2・Ｃ2＋ｑ）／Ｓ0 例えば、 Ｐ1＝２×１０−7（Ｔｏｒｒ） Ｐ2＝１×１０−7（Ｔｏｒｒ） Ｃ1＝２×１０−1（ｌ／ｓ） Ｃ2＝１×１０−1（ｌ／ｓ） ｑ＝１×１０−7（Ｔｏｒｒ ｌ／ｓ） Ｓ0＝１．５×１０2（ｌ／ｓ） とすれば、サブチャンバＳｃ内の到達圧力Ｐ0は次のよ
うになる。P 0 = (P 1 · C 1 + P 2 · C 2 + q) / S 0 For example, P 1 = 2 × 10 −7 (Torr) P 2 = 1 × 10 −7 (Torr) C 1 = 2 × 10 −1 (l / s) C 2 = 1 × 10 −1 (l / s) q = 1 × 10 −7 (Torr l / s) S 0 = 1.5 × 10 2 (l / s) Then, the ultimate pressure P 0 in the sub-chamber Sc is as follows.
【００１７】Ｐ0＝（４×１０−8＋１×１０−8＋１×
１０−7）／（１．５×１０2）＝（１．５×１０−7）
／（１．５×１０2）＝１×１０−9（Ｔｏｒｒ） 上記メインチャンバＭｃ内の到達圧力Ｐ1＝２×１０−7
（Ｔｏｒｒ）は、従来の真空用潤滑剤をステージ系に使
用して十分性能を維持できる圧力である。また、サブチ
ャンバＳｃ内の到達圧力Ｐ0＝１×１０−9（Ｔｏｒｒ）
は、試料の汚れを防止し、精密な描画を行うに十分な圧
力である。P 0 = (4 × 10 -8 + 1 × 10 -8 + 1 ×
10 −7 ) / (1.5 × 10 2 ) = (1.5 × 10 −7 ).
/(1.5×10 2 ) = 1 × 10 −9 (Torr) Ultimate pressure P 1 = 2 × 10 −7 in the main chamber Mc
(Torr) is a pressure at which sufficient performance can be maintained by using a conventional vacuum lubricant for a stage system. Further, the ultimate pressure in the sub chamber Sc P 0 = 1 × 10 −9 (Torr)
Is a pressure sufficient to prevent contamination of the sample and perform precise drawing.
【００１８】ところで、サブチャンバＳｃの到達圧力Ｐ
0を十分低くするためには、放出ガス量ｑを小さくする
ことが重要であることは明白である。前記した具体的な
条件において、放出ガス量を２．５×１０−8（Ｔｏｒ
ｒ ｌ／ｓ）にできれば、サブチャンバＳｃ内の到達圧
力Ｐ0は次の通りとなる。By the way, the ultimate pressure P of the sub-chamber Sc
It is clear that it is important to reduce the amount of released gas q in order to make 0 sufficiently low. Under the specific conditions described above, the amount of released gas is 2.5 × 10 −8 (Tor).
If r 1 / s) is achieved, the ultimate pressure P 0 in the sub-chamber Sc will be as follows.
【００１９】Ｐ0＝（４×１０−8＋１×１０−8＋２．
５×１０−8）／（１．５×１０2）＝（７．５×１０
−8）／（１．５×１０2）＝５×１０−10（Ｔｏｒｒ） 放出ガス量ｑを低下させるためには、ベーキングが必要
となる。各構成部品をベーキング後組み立て、全体をベ
ーキングするとき、いくつかの制限がある。まず第１
に、ステージ系に設けられたレーザ測長用ミラー部（図
示せず）の温度上昇を制限しなくてはならない。ミラー
固定が接着の場合は数十度であり、また、ステージ系の
相対運動部の制限がある。第２にベーキング時間は一般
に長時間に渡り、近接部分には絶えず熱が流入する。従
って、この熱を取り去る方法が必要になる。P 0 = (4 × 10 -8 + 1 × 10 -8 +2.
5 × 10 −8 ) / (1.5 × 10 2 ) = (7.5 × 10
-8 ) / (1.5 * 10 < 2 >) = 5 * 10 < -10 > (Torr) Baking is required in order to reduce the released gas amount q. There are some limitations when assembling each component after baking and baking the whole. First of all
First, it is necessary to limit the temperature rise of the laser measuring mirror unit (not shown) provided in the stage system. If the mirror is fixed by adhesion, it is several tens of degrees, and there is a limit on the relative moving part of the stage system. Secondly, the baking time is generally long, and heat constantly flows into the vicinity. Therefore, a method of removing this heat is needed.
【００２０】そのため、ステージ４のサブチャンバＳｃ
に接した部分（ベーキングされる部分）と、メインチャ
ンバＭｃ内の部分（加熱が好ましくない部分）とを熱的
に絶縁し、メインチャンバＭｃ内の部分を冷却すること
は有効である。その結果、ステージ４のメインチャンバ
Ｍｃ内の部分に設けられたレーザ測長系のミラー部など
は、高い温度に加熱されて精度が低下することは防止さ
れる。Therefore, the subchamber Sc of the stage 4 is
It is effective to thermally insulate the portion in contact with (the portion to be baked) and the portion in the main chamber Mc (the portion where heating is not preferable) to cool the portion in the main chamber Mc. As a result, it is possible to prevent the accuracy of the mirror portion of the laser measuring system, which is provided in the main chamber Mc of the stage 4, from being heated to a high temperature and being deteriorated.
【００２１】以上本発明の実施例を説明したが、本発明
はこの実施例に限定されない。例えば、描画装置を例に
して説明したが、走査電子顕微鏡など真空中で試料を移
動させる機構を有した他の荷電粒子ビーム装置にも本発
明を適用することができる。また、サブチャンバ内を高
真空に排気する例を説明したが、サブチャンバ内を高真
空に排気した後、特定のガスを入れる場合にも本発明を
適用することができる。Although the embodiment of the present invention has been described above, the present invention is not limited to this embodiment. For example, although the drawing device has been described as an example, the present invention can be applied to other charged particle beam devices having a mechanism for moving a sample in a vacuum such as a scanning electron microscope. Further, although the example in which the sub-chamber is evacuated to high vacuum has been described, the present invention can be applied to the case where the specific gas is introduced after the sub-chamber is evacuated to high vacuum.
【００２２】[0022]
【発明の効果】以上説明したように、本発明に基づく荷
電粒子ビーム装置は、試料が入れられる第１のチャンバ
ーと、移動機構が入れられる第２のチャンバーとの間を
小さな排気コンダクタンスの間隙のみで連通し、差動排
気によって第１のチャンバー内を比較的高い真空度に維
持し、第２のチャンバー内を比較的低い真空度に維持す
るように構成した。その結果、ステージ系の滑り駆動部
と試料周辺部を実質的に真空的に切り離すことができ、
ステージ系駆動に十分な潤滑を確保できる一方、試料周
辺を高真空状態とすることができる。このため、高真空
対応のステージを開発する必要がなくなる。As described above, in the charged particle beam apparatus according to the present invention, only a small exhaust conductance gap is provided between the first chamber in which the sample is placed and the second chamber in which the moving mechanism is placed. The first chamber is maintained at a relatively high degree of vacuum and the second chamber is maintained at a relatively low degree of vacuum by differential evacuation. As a result, the slide drive part of the stage system and the sample peripheral part can be separated substantially in a vacuum,
It is possible to secure sufficient lubrication for driving the stage system, while maintaining a high vacuum state around the sample. Therefore, it is not necessary to develop a stage compatible with high vacuum.
【００２３】また、サブチャンバと電子ビームカラムと
の間にオリフィスを設け、このオリフィスの電子銃側に
排気系を設けたので、サブチャンバを高真空に排気しや
すく、また、サブチャンバにガスを入れた場合でも、電
子銃への影響を阻止することができる。Further, since the orifice is provided between the sub-chamber and the electron beam column and the exhaust system is provided on the electron gun side of the orifice, the sub-chamber can be easily evacuated to a high vacuum, and gas can be supplied to the sub-chamber. Even when put in, it is possible to prevent the influence on the electron gun.
【図１】本発明の一実施例である電子ビーム描画装置を
示す図である。FIG. 1 is a diagram showing an electron beam drawing apparatus according to an embodiment of the present invention.
【図２】図１の部分拡大図である。FIG. 2 is a partially enlarged view of FIG.
【図３】図１及び図２の構成の模式図である。FIG. 3 is a schematic diagram of the configuration of FIGS. 1 and 2.
１ メインチャンバ壁 ２ ベース部材 ３ ガイド ４ 移動ステージ ５ 送りネジ ６ サブチャンバ壁 ７ フランジ ８ 開口 ９ 平板部材 １０ 試料 １１ 電子ビームカラム １２ チューブ １３ オリフィス １４ 排気口 １５，１６ 排気管 1 Main Chamber Wall 2 Base Member 3 Guide 4 Moving Stage 5 Feed Screw 6 Sub Chamber Wall 7 Flange 8 Opening 9 Flat Plate Member 10 Sample 11 Electron Beam Column 12 Tube 13 Orifice 14 Exhaust Port 15, 16 Exhaust Pipe
Claims (1)
るステージと、ステージを水平方向に移動させるための
移動機構と、試料が入れられる第１のチャンバーと、移
動機構が入れられる第２のチャンバーと、第１のチャン
バー内を排気する第１の排気系と、第２のチャンバー内
を排気する第２の排気系と、第１と第２のチャンバーと
の間に配置され、移動機構によって移動するステージの
一部が貫通する開口を有した隔壁と、開口の周辺部にお
いて隔壁と対向して配置され、ステージと共に移動する
平面板とを有しており、隔壁と平面板との間には第１の
チャンバー内と第２のチャンバー内とを連通する小さな
排気コンダクタンスの間隙が設けられていることを特徴
とする荷電粒子ビーム装置。1. A stage on which a sample to be irradiated with a charged particle beam is placed, a moving mechanism for moving the stage in a horizontal direction, a first chamber in which the sample is placed, and a second chamber in which the moving mechanism is placed. And a first exhaust system for exhausting the inside of the first chamber, a second exhaust system for exhausting the inside of the second chamber, and the first and second chambers, which are arranged by the moving mechanism. A partition wall having an opening through which a part of the stage penetrates, and a flat plate arranged to face the partition wall in the peripheral portion of the opening and moving with the stage. A charged particle beam device, characterized in that a small exhaust conductance gap is provided to connect the inside of the first chamber and the inside of the second chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14731294A JP3205663B2 (en) | 1994-06-29 | 1994-06-29 | Charged particle beam equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14731294A JP3205663B2 (en) | 1994-06-29 | 1994-06-29 | Charged particle beam equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0817709A true JPH0817709A (en) | 1996-01-19 |
| JP3205663B2 JP3205663B2 (en) | 2001-09-04 |
Family
ID=15427354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14731294A Ceased JP3205663B2 (en) | 1994-06-29 | 1994-06-29 | Charged particle beam equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3205663B2 (en) |
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