JPH08172094A - Electronic component - Google Patents

Abstract

PURPOSE: To contrive to improve the reliability of an electronic component and the mounting yield of the component by a method wherein an anisotropic film and an organic thin film consisting of the same content as that of the constituent material excluding the conductive material of a conductive bonding material, which is formed in such a way that the conductive bonding material is pressure-bonded to an electrode material, on a TAB side and is constituted integrally with the electrode material are arranged on a mounting electrode surface with an exposed Al material. CONSTITUTION: In order to hold a clean mounting electrode surface in a thin film transistor (TFT) array completed with an insulating film 4 opened, an organic thin film consisting of the same component as that of the constituent material excluding the conductive material of a conductive bonding material, which is formed in such a way that the conductive bonding material is pressure-bonded to an electrode material on a TAB side and is constituted integrally with the electrode material, is arranged on the mounting electrode surface with an exposed Al material and is used as a contamination preventive film 9b for preventing contamination from the outside air. A mounting of a TAB system is conducted via the film 9b. Moreover, in order to hold the clean mounting electrode surface in the TFT array completed with the film 4, an anisotropic film consisting of conductive particles protected with a resin or resin capsules is arranged on the mounting electrode surface with the exposed Al material and is used as a contamination preventive film for preventing contamination from the outside air.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting electrode protection structure for electronic parts. More specifically, it is an electronic component having a structure in which the surface of a mounting electrode material in which row / column electrode wiring made of Al or Al alloy is directly drawn to the outside is protected by an organic film.

[0002]

2. Description of the Related Art In recent years, in thin film transistors (TFTs), an array structure has been used in which gate wiring and source wiring are directly drawn to a mounting portion in order to simplify the process and reduce mounting resistance.

Therefore, FIG. 3 shows a schematic correlation between the gate wiring and source wiring of the TFT array and each mounting electrode. Gate wirings 2 and source wirings 3 are formed on the transparent substrate 1 so as to intersect with each other with an insulating film 4 interposed therebetween. (FIG. 3a) The display regions A, B, C and D (FIG. 3a) in which the TFTs are arranged are made into a liquid crystal panel by arranging the counter substrate 5 through the liquid crystal layer. Mounting electrodes 2a and 3a are provided on the respective extension portions of the gate wiring 2 and the source wiring 3, and the insulating film 4 on the mounting electrodes is opened and removed (FIG. 3b).

Next, a conventional metal structure in which the mounting electrode portion is TAB mounted will be described below with reference to FIGS.
FIG. 4a is a plan view in which a TAB material is mounted on the mounting electrodes 2a and 3a, while FIG. 4b shows a cross-sectional structure of the AA ′ portion in FIG.

A gate wiring material (or source wiring material) such as Al or Al alloy is formed on the transparent substrate 1 as the TFT array mounting electrode 2a (or 3a). Each mounting electrode portion is formed with an insulating film 4 opened to obtain contact with the driving IC.

On the other hand, the TAB material is T on the polyimide film 6.
As the AB electrode 7, for example, the wiring material is arranged in a state of being plated with Au or Sn. Then, as the conductive particles 8, for example, resin balls plated with Ni or Au or N
It is bonded to the mounting electrode portion of the TFT array substrate via the conductive adhesive material 9 containing i particles. The conductive particles 8 are contained in the conductive adhesive 9 to form an anisotropic film 10, which is generally placed and integrated on the TAB electrode 7 on the polyimide film.

A protective material 11 is applied and formed to protect the exposed array electrode 2a. In this way T
The FT mounting panel is completed (Fig. 4b).

However, the film quality may change due to contamination of the surfaces of the mounting electrode portions 2a and 3a depending on the standing environment and the standing time after the completion of the TFT array or after forming the liquid crystal panel. (FIG. 5 a) TF generated in the film quality change portion 12
When TAB mounting is performed on the T panel, contact failure occurs when the film quality is an insulating film and electrode corrosion occurs when contaminants adhere (FIG. 5b).

The gate and source electrode materials include Mo, Ta, MoTa, Cr, in addition to Al and Al compounds described above.
There are also cases where Ti is used and a single layer film, a laminated film, or a combination thereof. Depending on the metal, there is a concern that contact failure or metal corrosion may occur as described above.

[0010]

The TFT array is
As described above, the mounting electrodes are made of Al or an Al alloy and the row / column electrode wiring is directly extended to the outside. Therefore, if the TAB mounting is not performed for a long time, the Al of the mounting electrodes is The electrode material is corroded or a natural oxide insulating film is formed and deteriorated, causing mounting connection failure, resulting in reduction in reliability and mounting yield.

[0011]

[MEANS FOR SOLVING THE PROBLEMS] An anisotropic thin film formed by pressure-bonding integrally with an electrode material on the TAB side is provided on the mounting electrode surface where the Al material is exposed, the organic thin film having the same composition as the constituent material except the conductive material. However, it is used as a pollution prevention film from the outside air. Then, the TAB mounting is performed through the pollution prevention film.

[0012]

By covering the surface of the mounting electrode made of Al or Al alloy with an organic thin film, the surface of the mounting electrode is protected from contaminants from the outside air and a clean state of the TFT array is maintained. In the TAB mounting step, since the organic thin film has the same composition as the conductive adhesive material used when mounting the TAB, the organic thin film is melted and integrated by thermocompression bonding through the organic thin film. The conductive material particles having a hardness different from that of the organic film penetrates the organic thin film to obtain a contact.

[0013]

EXAMPLE A first example of the present invention will be described below with reference to FIG. The completed TFT array in which the insulating film 4 is opened has an organic thin film of the same component as the constituent material of the conductive adhesive 9 which is press-bonded integrally with the electrode material on the TAB side in order to hold a clean mounting electrode surface. It is arranged on the surface of the mounting electrode where is exposed, and is used as a pollution prevention film 9b from the outside air (FIG. 1a).

The TAB mounting is carried out by the pollution prevention film 9b.
Apply as usual via. The conductive particles 8 in the anisotropic film 10 penetrate the contamination preventing film 9b and become a contact material. Since the pollution prevention film 9b has the same composition as the conductive adhesive 9 in the anisotropic film 10, it is melted and integrated by thermocompression bonding (FIG. 1).
b).

Next, a second embodiment will be described below with reference to FIG. The completed TFT array in which the insulating film 4 is opened mounts the anisotropic film 10b in which the conductive particles 8 are protected by the resin 13a or the resin capsule 13b in order to hold the clean mounting electrode surface, and the Al material is exposed. It is placed on the electrode surface and used as a pollution prevention film from the outside air. Since the conductive particles 8 are covered with resin, they have an insulating property and are effective as a pollution prevention film even when left in the air for a long time. Then, the anisotropic film 10b
The TAB electrode 7, which is a TAB material, is placed on top of the TAB electrode, and the TAB electrode 7 is heated and pressure-bonded to implement TAB. The conductive particles 8 by the pressure bonding
The conductive particles 8 are converted into a contact material between the TAB electrode 7 and the mounting electrode 2a by melting and moving or breaking the resin 13 covering the.

[0016]

By covering the surface of the mounting electrode made of Al or Al alloy with the organic adhesive thin film used for mounting,
The cleanliness of the TFT array is maintained, the yield of TAB mounting is improved, and the reliability is improved by Al corrosion protection.

The structure of the present invention can be obtained after the TFT array process or the liquid crystal panel forming process, and after the structure is obtained, the mounting electrodes are protected, so that the contamination from the outside air can be avoided. Therefore, long-term storage in a TFT array state or a liquid crystal panel state is possible.

[Brief description of drawings]

FIG. 1A is a configuration diagram of a first embodiment of the present invention, and FIG. 1B is a configuration diagram of a first embodiment of the present invention.

2A is a configuration diagram of a second embodiment of the present invention, and FIG. 2B is a configuration diagram of a second embodiment of the present invention.

FIG. 3A is a conventional TFT panel configuration diagram, and FIG. 3B is a conventional TFT panel configuration diagram.

FIG. 4A is a configuration diagram of a conventional TFT panel TAB mounting configuration. FIG. 4B is a configuration diagram of a conventional TFT panel TAB mounting configuration.

FIG. 5A is an explanatory diagram of a conventional TAB mounting defect. FIG. 5B is a conventional TAB mounting defect explanatory diagram.

[Explanation of symbols]

 1 Transparent Substrate 2 Gate Wiring (2a: Gate Side Mounting Electrode) 3 Source Wiring (3a: Source Side Mounting Electrode) 4 Insulating Film 5 Counter Substrate 6 Polyimide Film 7 TAB Electrode 8 Conductive Particles 9 Adhesive 10 Anisotropic Film 11 Protective Film 12 Film quality change part 13 Resin

Continuation of front page (51) Int.Cl. ⁶ Identification number Office reference number FI technical display location H05K 1/18 J 8718-4E

Claims (3)

[Claims] 1. An electronic component having a wiring electrode, wherein an end portion of the wiring electrode is made of a metal single layer or a multilayer film, and the surface thereof is protected by an organic film. 2. The electronic component according to claim 1, wherein the organic film is an organic film made of the same component as an anisotropic film adhesive forming a TAB material. 3. The electronic component according to claim 1, wherein the organic film contains conductive particles protected by a resin capsule.