JPH0817072A - Optical recording medium - Google Patents

Abstract

PURPOSE:To obtain an optical recording medium capable of recording and erasure with low power, maintaining stable action even after recording and erasure repeated many times, almost free from the deterioration of characteristics, excellent in wet heat and oxidation resistances and ensuring a long service life. CONSTITUTION:This optical recording medium has a structure obtd. by successively laminating at least a 1st dielectric layer, a recording layer, a 2nd dielectric layer which is not transparent and a reflecting layer on a transparent substrate. Information can be recorded, erased and reproduced by irradiating the recording layer with light and the recording and erasure of information are carried out by a phase change between amorphous and crystalline phases.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical information recording medium capable of recording, erasing and reproducing information by irradiating light. In particular, the present invention relates to a rewritable phase change type optical recording medium such as an optical disc having a function of erasing and rewriting recorded information and capable of recording information signals at high speed and high density.

[0002]

2. Description of the Related Art The conventional techniques for rewritable phase change type optical recording media are as follows. These optical recording media have a recording layer containing tellurium as a main component, and during recording, a focused laser light pulse is irradiated to the recording layer in a crystalline state for a short time to partially melt the recording layer. To do. The melted portion is rapidly cooled by thermal diffusion and solidified to form a recording mark in an amorphous state. The light reflectance of this recording mark is lower than that of the crystalline state, and it can be optically reproduced as a recording signal.

Further, at the time of erasing, the recording mark portion is irradiated with a laser beam and heated to a temperature below the melting point of the recording layer and above the crystallization temperature to crystallize the recording mark in an amorphous state, and the original unrecorded state. Return to the state.

As a material for the recording layer of these rewritable phase change optical recording media, alloys such as Ge2Sb2Te5 (N.Ya
mada et al, Proc. Int. Symp. on Optical Memory 198
7 p61-66) is known.

Optical recording media using these Te alloys as recording layers have a high crystallization rate, and high speed overwriting with a circular single beam is possible only by modulating the irradiation power. In an optical recording medium using these recording layers, a dielectric layer having heat resistance and translucency is usually provided on both surfaces of the recording layer to prevent deformation and opening of the recording layer during recording. Furthermore, a metal reflection layer such as a light-reflective metal such as Al is provided on the dielectric layer on the side opposite to the light beam incident direction to improve the signal contrast at the time of reproduction by the optical interference effect, and at the same time, to prevent There is known a technique for facilitating the formation of recording marks in a crystalline state and improving the erasing characteristic and the repeating characteristic. Particularly, in the "quenching structure" in which the recording layer and the dielectric layer between the recording layer and the reflecting layer are each thinned to about 20 nm, compared with the "slow cooling structure" in which the dielectric layer is thickened to about 200 nm, rewriting is repeated. It is excellent in that the recording characteristics are not deteriorated by the recording and the erasing power has a wide power margin (T.Ohota et al., SPIE Proc. Vol. 13
16 (1990) pp367-373).

[0006]

The problems associated with the above-mentioned conventional rewritable phase change type optical recording medium having a rapid cooling structure are as follows.

The conventional disk structure requires a large laser power to form a recording mark. For this reason, it is necessary to mount a laser capable of oscillating a large power on a recording / reproducing drive, resulting in high cost.

An object of the present invention is to solve the above-mentioned problems of the conventional optical recording medium and provide a highly sensitive optical recording medium. Another object of the present invention is to provide an optical recording medium having excellent storage stability and long life. Yet another object of the present invention is to provide an optical recording medium having excellent durability against repeated overwriting.

[0009]

According to the present invention, information can be recorded, erased, and reproduced by irradiating a recording layer formed on a substrate with light. In an optical recording medium performed by a phase change between a phase and a crystalline phase, the optical recording medium has at least a first dielectric layer, a recording layer, a second dielectric layer and a reflective layer laminated in this order on a transparent substrate. An optical recording medium having a structure, wherein the second dielectric layer is not transparent.

The first and second dielectric layers of the present invention have an effect of protecting the substrate and the recording layer from heat, such as preventing the substrate and the recording layer from being deformed by heat during recording and deteriorating the recording characteristics. The optical interference effect has the effect of improving the signal contrast during reproduction.

The thickness d1 of the first dielectric layer is usually 50 nm or more and 400 nm or less because it is difficult to peel off from the substrate or the recording layer and cracks and other defects are less likely to occur. In order to increase the carrier-to-noise ratio (C / N) by increasing the contrast of the recording / reproducing signal, it is more preferable that d1
Is 0.25λ / with respect to the wavelength λ of light used for recording and reproduction.
n ≦ d1 ≦ 0.70λ / n.

In the present invention, it is important that the second dielectric layer is not transparent or has a thickness of 30 nm or more and 60 nm or less in order to enable recording and erasing with low power.

Here, not being transparent includes not only opaque but also translucent. In the present invention, when the imaginary part of the refractive index of the second dielectric layer is k, k is preferably a value exceeding 0. If k is 0, it may not be possible to achieve low power during recording and erasing. From the viewpoint of achieving both low power recording and high C / N by increasing the contrast of the recording / reproducing signal, k is more preferably 0.01 ≦ k ≦ 1.0, and further preferably k is 0.01 ≦ k. ≦ 0.3.

In the second dielectric layer, when the imaginary part of the refractive index thereof is k, 0.01 ≦ k ≦ 1.0 in order to enable recording and erasing at low power. is important.
If 0.01> k or k> 1.0, high sensitivity cannot be achieved during recording and erasing. From the viewpoint of achieving both low power recording and high C / N due to high contrast of the recording / reproducing signal, 0.01 ≦ k ≦ 1.0 is more preferable.

The above-mentioned conventional rewritable phase change type optical recording medium having a rapid cooling structure has a second dielectric layer having a thickness of, for example, 20 nm, and 16 m is required for good recording.
Laser power of W or higher is required. On the other hand, in the present invention, by making the second dielectric layer non-transparent,
By imparting light absorption to this layer and preventing cooling of the recording layer, the sensitivity is improved, and good recording is possible with a smaller laser power of 15 mW or less with the same configuration.
Refractive index of the second dielectric layer of the optical recording medium commonly used are those of the k = 0, for making the k 0.0 1 or more to inhibit transparency and an obstacle to the recording characteristics It used to be considered. In the present invention, by breaking the conventional wisdom and setting the imaginary part k of the refractive index of the second dielectric layer to 0.01 ≦ k ≦ 1.0, the sensitivity can be increased and the power can be reduced with a small power. They found that they could record well.

Further, the thickness of the second dielectric layer is 3
By setting the thickness to 0 nm or more, recording with lower power becomes possible.

As the first dielectric layer, ZnS, Si
There are inorganic thin films such as O ₂ , silicon nitride, and aluminum oxide. In particular, ZnS thin film, Si, Ge, Al, Ti,
Thin films of metal oxides such as Zr and Ta, thin films of nitrides such as Si and Al, thin films of carbides such as Ti, Zr and Hf, and films of a mixture of these compounds are preferable because of high heat resistance. . Further, a mixture of carbon and a fluoride such as MgF ₂ is also preferable because the residual stress of the film is small. Especially mixed film of ZnS and SiO ₂ or a mixed film of ZnS and SiO ₂ and carbon are recorded, even by the repetition of erasing and recording sensitivity, C / N, preferably in particular ZnS since does not occur easily deteriorate, such as erasure ratio SiO
A mixed film of ₂ and carbon is preferable.

The second dielectric layer in the present invention is, for example,
Inorganic thin films such as ZnS, SiO ₂ , silicon nitride and aluminum oxide having k less than 0.01, especially thin films of ZnS, thin films of oxides of metals such as Si, Ge, Al, Ti, Zr and Ta, Si, Thin film of nitride such as Al, Ti,
It is preferable to mix a thin film of a carbide such as Zr or Hf or a film of a mixture of these compounds with a compound having k of 0.1 or more. Examples of compounds in which k is 0.1 or more include carbon, Ge, Al, Ti, Zr, Ta, Si, Zn, Hf, and A.
u, Ag, Pt, Cu, Cr, W, Pd, Mo, Nb,
Fe, Co, Ni, Ga, Cd, Rh, Y, La, C
e, Pr, Nd, Sm, Eu, Gd, Tb, Dy, H
simple substances such as o, Er, Tm, Yb, and Lu, and k of 0.
Examples thereof include compounds such as 5 or more oxides and sulfides. Among these, the dielectric layer is preferably a mixed film containing at least ZnS, SiO ₂ and carbon as constituent materials, and the molar ratio of ZnS to SiO ₂ in the second dielectric layer is ZnS / SiO ₂ = 85. / 15 to 65/35, and the molar ratio of (ZnS + SiO ₂ ) and C is (ZnS + S).
It is preferable that iO ₂ ) / C = 95/5 to 80/20.

In particular, since the recording sensitivity is high, the one-beam overwriting is possible at a high speed, the erasing rate is large, and the erasing characteristic is good, the main part of the optical recording medium can be constructed as follows. preferable.

As the material of the reflection layer, metals such as Al and Au having light reflectivity, and those containing these as the main components, T
Alloys containing additional elements such as i, Cr and Hf, and Al and A
Examples thereof include a mixture of a metal such as u and a metal compound such as a metal nitride such as Al and Si, a metal oxide, a metal chalcogenide, and the like. Metals such as Al and Au, and alloys containing these as the main components are preferable because they have high light reflectivity and high thermal conductivity. As an example of the above alloy, Al, Si, Mg, Cu, Pd, Ti, Cr, H
At least one element such as f, Ta, Nb, and Mn added in a total amount of 5 atomic% or less and 1 atomic% or more, or at least one element such as Cr, Ag, Cu, Pd, Pt, and Ni to Au. 20 atomic% or less and 1 atomic% in total
There are things added above. In particular, an alloy containing Al as a main component is preferable because the price of the material can be reduced. Above all, Al and Ti and C are preferable because of good corrosion resistance.
5 atom% or less and 0.5 atom% or less in total of at least one metal selected from r, Ta, Hf, Zr, Mn, and Pd.
The alloys added above are preferable. Above all, because it has good corrosion resistance and hillocks are less likely to occur,
Al-Hf-Pd alloy, Al-Hf alloy, Al in which the reflective layer contains a total of 0.5 atomic% or more and less than 3 atomic% of additional elements
-Ti alloy, Al-Ti-Hf alloy, Al-Cr alloy,
Al-Ta alloy, Al-Ti-Cr alloy, Al-Si-
It is preferable that the Mn alloy is composed of an alloy containing Al as a main component.

For the recording layer, it is preferable to use an alloy containing at least three elements of Ge, Sb, and Te as constituent elements from the viewpoint of overwriting at high speed. Further, its composition is preferably in the range represented by the following formula from the viewpoint of excellent thermal stability and repeated stability.

M z (Sbx Te 1-x) 1-yz (Ge 0.5 Te 0.5) y 0.35 ≦ x ≦ 0.5 0.2 ≦ y ≦ 0.5 0.0005 ≦ z ≦ 0.01 Here, M is at least one metal selected from palladium, niobium, platinum, silver, gold, and cobalt, Sb is antimony, Te is tellurium, and Ge is germanium. In addition, x, y, z, and numbers represent the number of atoms of each element (the number of moles of each element). Particularly, it is preferable because at least one of palladium and niobium is excellent in the above-mentioned effect.

In the present invention, the wavelength of light used for recording and reproducing is λ, the thickness of the first dielectric layer is d1, the refractive index (real part) is n1, the thickness of the recording layer is dr, and The thickness of the second dielectric layer is d2, the refractive index (real part) is n2, and the thickness of the reflective layer is d2.
When f, the following equation 0.25 λ / n ≦ d1 ≦ 0.70 λ / n 10 ≦ dr ≦ 40 (unit nm) 10 ≦ d2 ≦ 60 (unit nm) 40 ≦ df ≦ 200 2 ≦ n1 ≦ 2.5 The layer thickness is preferably set so as to satisfy 2≤n2≤2.5.

As the material of the substrate of the present invention, various transparent synthetic resins, transparent glass and the like can be used. In order to avoid the influence of dust and scratches on the substrate, it is preferable to use a transparent substrate and perform recording from the substrate side with a focused light beam.As such a transparent substrate material, glass, polycarbonate, polymethyl methacrylate, Examples thereof include polyolefin resin, epoxy resin and polyimide resin. In particular, a polycarbonate resin and an amorphous polyolefin resin are preferable because they have a small optical birefringence, a small hygroscopicity, and easy molding.

The thickness of the substrate is not particularly limited, but 0.01 mm to 5 mm is practical. 0.01 m
If it is less than m, it is easily affected by dust even when recording with an optical beam focused from the substrate side.
It becomes difficult to increase the numerical aperture of the objective lens, and the irradiation light beam spot size becomes large, which makes it difficult to increase the recording density. The substrate may be flexible or rigid. The flexible substrate is used in the form of tape, sheet, or card. The rigid board is used in the form of a card or disk. In addition, these substrates may have an air sandwich structure, an air incident structure, or a close-bonded structure by using two substrates after forming a recording layer and the like.

The light source used for recording on the optical recording medium of the present invention is a high-intensity light source such as laser light or strobe light. Particularly, the semiconductor laser light can be downsized, consumes less power, and can be modulated. Is preferable because it is easy.

Recording is performed by irradiating a crystalline recording layer with a laser light pulse or the like to form an amorphous recording mark. On the contrary, a crystalline recording mark may be formed on the amorphous recording layer. Erasure can be performed by irradiating a laser beam to crystallize an amorphous recording mark or to amorphize a crystalline recording mark. A method of forming an amorphous recording mark at the time of recording and crystallizing at the time of erasing is preferable because the recording speed can be increased and the deformation of the recording layer is less likely to occur.

Further, when forming the recording mark, the light intensity is high,
The one-beam overwrite in which the light is slightly weakened at the time of erasing and rewriting is performed by irradiating the light beam once is preferable because the rewriting time is shortened.

Next, a method for manufacturing the optical recording medium of the present invention will be described. Examples of the method for forming the reflective layer, the recording layer and the like on the substrate include known thin film forming methods in vacuum, such as a vacuum vapor deposition method, an ion plating method and a sputtering method. In particular, the sputtering method is preferable because the composition and the film thickness can be easily controlled.

The thickness of the recording layer to be formed can be easily controlled by monitoring the deposition state with a crystal oscillator film thickness meter or the like.

The recording layer or the like may be formed with the substrate fixed, moved, or rotated. Since the in-plane uniformity of the film thickness is excellent, it is preferable to rotate the substrate, and it is more preferable to combine the revolution.

Further, within a range that does not significantly impair the effects of the present invention, after forming a reflective layer or the like, a dielectric layer such as ZnS or SiO ₂ or resin protection such as an ultraviolet curable resin is formed to prevent scratches and deformation. You may provide a layer etc. as needed. Further, after forming the reflective layer or the like, or after further forming the above-mentioned resin protective layer, the two substrates may be opposed to each other and bonded with an adhesive.

The recording layer is preferably preliminarily crystallized by irradiation with light such as a laser beam or a xenon flash lamp before actual recording.

[0034]

EXAMPLES The present invention will be described below based on examples. (Analysis and measurement method) The compositions of the reflective layer and the recording layer were confirmed by ICP emission analysis (manufactured by Seiko Denshi Kogyo KK).
The carrier-to-noise ratio and the erasing rate (difference in reproduced carrier signal intensity after recording and after erasing) were measured by a spectrum analyzer. The film thickness during formation of the recording layer, the dielectric layer, and the reflective layer was monitored by a crystal oscillator film thickness meter. The thickness of each layer was measured by observing the cross section with a scanning electron microscope or a transmission electron microscope.

Example 1 A substrate made of polycarbonate with a spiral groove having a thickness of 1.2 mm, a diameter of 13 cm, and a pitch of 1.2 μm was used at 3 minutes per minute.
The recording layer, the dielectric layer, and the reflective layer were formed by a high frequency magnetron sputtering method while rotating at 0 revolutions.

20 mol% of SiO ₂ in one atmosphere
The added ZnS is sputtered to a film thickness of 160 nm on the substrate.
To form a first dielectric layer having a refractive index of 2.2. Furthermore, P
A target of an alloy of d, Nb, Ge, Sb, and Te is sputtered to form Nb0.004 Pd0.001 Ge0.175 Sb.
A recording layer having a thickness of 19 nm of 0.26 Te 0.56 was formed. Next, ZnS and C added with 20 mol% of SiO ₂
(C k value of 0.9) Co-sputtering so that the molar mixing ratio of ZnS and C becomes 8: 1 (ZnS / SiO2
Molar ratio = 8/2, (ZnS + SiO2) / C molar ratio = 8
/ 1) form a second dielectric layer with a thickness of 38 nm, and then Pd
A reflective layer having a thickness of 80 nm of 0.001 Hf0.02 Al0.979 alloy was formed.

After the disk was taken out of the vacuum container, an acrylic UV curable resin (SD-101 manufactured by Dainippon Ink and Chemicals, Inc.) was spin-coated on the reflective layer and cured by UV irradiation to have a thickness of 10 μm. A resin layer was formed to obtain the optical recording medium of the present invention.

This optical recording medium was irradiated with a semiconductor laser beam having a wavelength of 820 nm to crystallize and initialize the recording layer on the entire surface of the disk.

After that, under the condition of a linear velocity of 12 m / sec, the numerical aperture of the objective lens is 0.5 and the wavelength of the semiconductor laser is 780 n.
Using an optical head of m, a semiconductor laser light modulated to a frequency of 8.65 MHz (duty 37%), a peak power of 8 to 17 mW, and a bottom power of 4 to 9 mW was used to perform overwriting recording 100 times, and then reproduction power was obtained. 1.0
C / N was measured under the condition of a band width of 30 kHz by irradiating a semiconductor laser beam of mW. Furthermore, this part is 3.24M
The semiconductor laser beam modulated in the same manner as above is applied at a frequency of 19 Hz (duty 19%), and one-beam overwriting is performed. At this time, the erasing rate of the pre-recorded signal of 8.65 MHz and the end of the reproduced signal of the recorded mark The edge jitter was measured. With a peak power of 10 mW, a practically sufficient 50 dB C / N can be obtained, and with a bottom power of 4 to 7 mW, a practically sufficient 2
An erase rate of 0 dB was obtained.

Further, under the conditions of peak power of 12 mW, bottom power of 6 mW, and frequency of 8.65 MHz, one beam overwriting was repeated 10,000 times, and the same measurement was performed. In each case, the change was within 2 dB, almost no deterioration was observed, and the increase in jitter was hardly observed. In addition, this optical recording medium
After placing in an environment of 0 ° C and 80% relative humidity for 1000 hours,
After that, the recorded portion was reproduced, but the change in C / N was less than 2 dB and hardly changed. Further, recording and erasing were performed again, and the C / N and erasing rate were measured. As a result, almost no change was observed.

A part of this optical recording medium was peeled off at the interface between the recording layer and the second dielectric layer, and the value of k of the second dielectric layer was measured by spectroscopic ellipsometry and found to be 0.05. .

Further, when observing a part of the cross section of this optical recording medium with a transmission electron microscope, the thicknesses of the first dielectric layer, the recording layer, the second dielectric layer and the reflective layer are as set forth above. Was becoming.

[0043] In co-sputtering of ZnS and C of the first dielectric layer and the SiO ₂ was added 20 mol% Example 2 Example 1, ZnS and the molar mixing ratio of SiO ₂ and C, 8: 2: 1.2 A disk was manufactured in the same manner as in Example 1 except that the disk was manufactured as follows. As a result of measuring the recording characteristics in the same manner as in Example 1, the peak power was 1
A practically sufficient C / N of 50 dB or more can be obtained at 0 mW or more, and a practically sufficient 20 d at a bottom power of 4 to 7 mW.
An erase rate of B or more was obtained.

Further, under the conditions of peak power of 12 mW, bottom power of 6 mW and frequency of 8.65 MHz, one beam overwriting was repeated 10,000 times, and the same measurement was performed. In each case, the change was within 2 dB, almost no deterioration was observed, and the increase in jitter was hardly observed.

The optical recording medium was left in an environment of 80 ° C. and 80% relative humidity for 1000 hours, and then the recorded portion was reproduced, but the change in C / N was less than 2 dB and hardly changed. Recording and erasing are performed again, and C / N,
When the erasure rate was measured, almost no change was observed. Almost the same good recording and erasing characteristics were obtained.

When the value of k was measured in the same manner as in Example 1, it was 0.06.

Example 3 ZnS, SiO2 and C were added to the first dielectric layer of Example 1 by simultaneous sputtering of ZnS and C containing 20 mol% of SiO2.
A disk was manufactured in the same manner as in Example 1 except that the molar mixing ratio was adjusted to 8: 2: 2.5. Example 1
As a result of measuring the recording characteristics in the same manner as above, the peak power is 9.2
A practically sufficient C / N of 50 dB was obtained at mW, and a practically sufficient erasing rate of 20 dB was obtained at a bottom power of 4 to 7 mW. Further, under the conditions of a peak power of 11 mW, a bottom power of 5.6 mW, and a frequency of 8.65 MHz, one beam overwriting was repeated 10,000 times, and the same measurement was performed. In each case, almost no deterioration was observed within 2 dB, and almost no increase in jitter was observed.

The optical recording medium was placed in an environment of 80 ° C. and 80% relative humidity for 1000 hours, and then the recorded portion was reproduced. The change in C / N was less than 2 dB, and there was almost no change. Then, record and erase again C /
When N and the erasure rate were measured, almost no change was observed. Almost the same good recording and characteristics were obtained.

When the value of k was measured in the same manner as in Example 1, the value of k was 0.25.

Example 4 A disk was manufactured in the same manner as in Example 1 except that the thickness of the second dielectric layer in Example 1 was set to 20 nm. As a result of measuring the recording characteristics in the same manner as in Example 1, the peak power is 14 mW.
As described above, a practically sufficient C / N of 50 dB or more was obtained, and a practically sufficient erasing rate of 20 dB or more was obtained with a bottom power of 6 to 9 mW.

Further, under the conditions of a peak power of 16 mW, a bottom power of 8 mW, and a frequency of 8.65 MHz, one beam overwriting was repeated 10,000 times, and the same measurement was performed. In each case, the change was within 2 dB, almost no deterioration was observed, and the increase in jitter was hardly observed.

The optical recording medium was placed in an environment of 80 ° C. and 80% relative humidity for 1000 hours, and then the recorded portion was reproduced. The change in C / N was less than 2 dB, and there was almost no change. Recording and erasing are performed again, and C / N,
When the erasure rate was measured, almost no change was observed. Almost the same good recording and erasing characteristics were obtained.

Example 5 Instead of performing the second dielectric layer of Example 1 by co-sputtering ZnS and C added with 20 mol% of SiO ₂ , Zn
A disc was prepared in the same manner as in Example 1 except that an integral target having a molar mixing ratio of S, SiO ₂ and C of 72:18:10 was used. As a result of measuring the recording characteristics in the same manner as in Example 1, a C / N of 50 dB or more, which is practically sufficient, is obtained at a peak power of 10 mW or more, and the bottom power is 4
At about 7 mW, a practically sufficient erasing rate of 20 dB or more was obtained.

Further, one beam overwriting was repeated 10,000 times under the conditions of a peak power of 12 mW, a bottom power of 6 mW, and a frequency of 8.65 MHz, and the same measurement was performed. In each case, the change was within 2 dB, almost no deterioration was observed, and the increase in jitter was hardly observed.

The optical recording medium was placed in an environment of 80 ° C. and 80% relative humidity for 1000 hours, and then the recorded portion was reproduced. The change in C / N was less than 2 dB, and there was almost no change. Recording and erasing are performed again, and C / N,
When the erasure rate was measured, almost no change was observed. Almost the same good recording and erasing characteristics were obtained.

When the value of k was measured in the same manner as in Example 1, the value of k was 0.06.

Comparative Example 1 The second dielectric layer of the optical recording medium of Example 1 was made of SiO ₂ of 20.
A conventional quenching structure disk was prepared in the same manner as in Example 1 except that ZnS added with mol% was formed by sputtering to have a thickness of 20 nm and the thickness of the reflective layer was 150 nm.

When measured in the same manner as in Example 1, when the peak power was less than 15 mW, the C / N did not reach 50 dB,
At 16 mW or higher, a C / N of 50 dB or higher was obtained. When the erasing rate is 20 dB, the bottom power is 7 to 10
The optical recording medium has a sensitivity of mW and is lower than that of the example.

When the value of k was measured in the same manner as in Example 1, the value of k was 0.

[0060]

According to the present invention, the composition of the recording layer of the optical recording medium is set to a specific composition, so that the following effects are obtained. (1) Recording can be erased with low power. (2) Even if recording and erasing are repeated a large number of times, the operation is stable and there is almost no deterioration of characteristics or occurrence of defects. (3) Excellent resistance to moist heat and oxidation, and long life. (4) It can be easily manufactured by the sputtering method.

Claims (12)

[Claims] 1. Information can be recorded, erased, and reproduced by irradiating a recording layer formed on a substrate with light, and the recording and erasing of information is performed in a phase between an amorphous phase and a crystalline phase. In the optical recording medium performed by the change, the optical recording medium has a structure in which at least a first dielectric layer, a recording layer, a second dielectric layer and a reflective layer are laminated in this order on a transparent substrate. An optical recording medium whose dielectric layer is not transparent. 2. The optical recording medium according to claim 1, wherein k is a value exceeding 0, where k is the imaginary part of the refractive index of the second dielectric layer. 3. The optical recording medium according to claim 2, wherein k is 0.01 ≦ k ≦ 1.0. 4. The optical recording medium according to claim 2, wherein k is 0.01 ≦ k ≦ 0.3. 5. The thickness d1 of the first dielectric layer is 50 nm ≦ d1.
The optical recording medium according to claim 1, wherein ≦ 400 nm. 6. The thickness d1 of the first dielectric layer is 0.25.lamda./n.ltoreq.d1.ltoreq.0.70.lamda./n with respect to the wavelength .lamda. Of the light used for recording and reproducing (where n is a natural number). The optical recording medium according to claim 1, wherein 7. The thickness d2 of the second dielectric layer is 30 nm ≦ d2.
The optical recording medium according to claim 1, wherein ≦ 60 nm. 8. The first dielectric layer comprises at least ZnS and SiO.
The optical recording medium according to claim 1, which is a mixed film containing ₂ . 9. The second dielectric layer comprises at least ZnS and SiO.
The optical recording medium according to claim 1, which is a mixed film containing ₂ and C as constituent materials. 10. The molar ratio of ZnS and SiO ₂ in the second dielectric layer is ZnS / SiO ₂ = 85/15 to 65/35, and the molar ratio of (ZnS + SiO ₂ ) and C is (ZnS + S).
The optical recording medium according to claim 9, wherein i0 ₂ ) / C = 95/5 to 80/20. 11. The recording layer comprises at least G as a constituent element.
The optical recording medium according to claim 1, which is composed of an alloy containing at least three elements of e, Sb, and Te. 12. Information can be recorded, erased, and reproduced by irradiating a recording layer formed on a substrate with light, and the recording and erasing of information can be performed in a phase between an amorphous phase and a crystalline phase. In the optical recording medium performed by the change, the optical recording medium has at least a first dielectric layer, a recording layer, and a transparent substrate,
When the second dielectric layer has a structure in which a second dielectric layer and a reflective layer are laminated in this order, and the imaginary part of the refractive index is k, k
An optical recording medium containing a substance having a value of 0.1 or more as an essential component.