JPH08128889A - Infrared sensor - Google Patents
Infrared sensorInfo
- Publication number
- JPH08128889A JPH08128889A JP6265703A JP26570394A JPH08128889A JP H08128889 A JPH08128889 A JP H08128889A JP 6265703 A JP6265703 A JP 6265703A JP 26570394 A JP26570394 A JP 26570394A JP H08128889 A JPH08128889 A JP H08128889A
- Authority
- JP
- Japan
- Prior art keywords
- film
- vanadium oxide
- bolometer
- infrared sensor
- vanadium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910001935 vanadium oxide Inorganic materials 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 13
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 3
- 229920005591 polysilicon Polymers 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005234 chemical deposition Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 76
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 108010025899 gelatin film Proteins 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- JLBXCKSMESLGTJ-UHFFFAOYSA-N 1-ethoxypropan-1-ol Chemical compound CCOC(O)CC JLBXCKSMESLGTJ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は赤外線センサに関し、特
にボロメータ型の赤外線センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared sensor, and more particularly to a bolometer type infrared sensor.
【０００２】[0002]
【従来の技術】従来のボロメータ型の赤外線センサは、
図２に示すように、読出回路を形成したＳｉ基板１の上
に設けた空隙３を介して熱的に分離されたＳｉ3 Ｎ4 支
持膜１２の上にスパッタ法等を用いて選択的に形成した
厚さ５０〜１００ｎｍのＶ０2膜１３と、ＶＯ2 膜１３
の表面を被覆して形成したＳｉ3 Ｎ4 保護膜１４とを有
して赤外線センサが構成され（テクニカル・ダイジェス
ト・オブ・インターナショナル・エレクトロン・デバイ
ス・ミーティング（Ｔｅｃｈｎｉｃａｌ Ｄｉｇｅｓｔ
ｏｆ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｅｌｅｃｔｒｏ
ｎ ＤｅｖｉｃｅＭｅｅｔｉｎｇ）１９９３年１２月、
第８．１．１頁参照）、このときのボロメータの感度は
抵抗の温度係数に比例し、このＶＯ2 膜の温度係数は
０．０２Ｋ-1である。2. Description of the Related Art A conventional bolometer type infrared sensor is:
As shown in FIG. 2, a Si 3 N 4 support film 12 thermally separated via a gap 3 provided on a Si substrate 1 on which a readout circuit is formed is selectively formed by a sputtering method or the like. and V0 2 film 13 of the formed thickness of 50 to 100 nm, VO 2 layer 13
And an Si 3 N 4 protective film 14 formed by coating the surface of the infrared sensor (Technical Digest of International Electron Device Meeting (Technical Digest)).
of International Electro
n Device Meeting) December 1993,
At this time, the sensitivity of the bolometer is proportional to the temperature coefficient of the resistor, and the temperature coefficient of the VO 2 film is 0.02 K −1 .
【０００３】しかしながら、スパッタ法等により成膜さ
れたＶＯ2 膜の温度係数はオプティカル・エンジニアリ
ング（Ｏｐｔｉｃａｌ Ｅｎｇｉｎｅｅｒｉｎｇ）第３
２巻、１９９３年、第２０９２頁にも記載されているよ
うに、通常０．０３〜０．０５Ｋ-1という大きい値を示
す。However, the temperature coefficient of the VO 2 film formed by the sputtering method or the like is determined by the optical engineering (Optical Engineering) No. 3
As described in Vol. 2, 1993, p. 2092, it usually shows a large value of 0.03 to 0.05 K -1 .
【０００４】[0004]
【発明が解決しようとする課題】この従来の赤外線セン
サは、酸化バナジウム膜の温度係数が小さくなることに
より感度が低下するという問題があった。However, this conventional infrared sensor has a problem that the sensitivity is lowered due to a decrease in the temperature coefficient of the vanadium oxide film.
【０００５】これは、酸化バナジウム膜の表面を被覆す
る保護膜を形成する際に酸化バナジウム膜が還元又は酸
化性雰囲気に晒されることで酸化バナジウム膜の特性が
劣化するためと考えられる。[0005] This is presumably because the characteristics of the vanadium oxide film are deteriorated by exposing the vanadium oxide film to a reducing or oxidizing atmosphere when forming a protective film covering the surface of the vanadium oxide film.
【０００６】本発明の目的は、保護膜の形成時における
ボロメータ材料の酸化バナジウム膜の劣化を防ぎ、感度
を高めた赤外線センサを提供することにある。It is an object of the present invention to provide an infrared sensor which prevents deterioration of a vanadium oxide film of a bolometer material during formation of a protective film and has improved sensitivity.
【０００７】[0007]
【課題を解決するための手段】本発明の赤外線センサ
は、基板上に設けた空隙を介して熱的に分離された支持
膜の上に形成したボロメータ用の酸化バナジウム膜と、
前記酸化バナジウム膜の表面を被覆して形成した五酸化
バナジウム膜からなる第１の保護膜と、前記第１の保護
膜を含む表面に設けた第２の保護膜とを有する。An infrared sensor according to the present invention comprises a vanadium oxide film for a bolometer formed on a support film which is thermally separated via a gap provided on a substrate.
It has a first protective film made of a vanadium pentoxide film formed by covering the surface of the vanadium oxide film, and a second protective film provided on the surface including the first protective film.
【０００８】[0008]
【実施例】次に、本発明について図面を参照して説明す
る。Next, the present invention will be described with reference to the drawings.
【０００９】図１は本発明の一実施例を示す模式的断面
図である。FIG. 1 is a schematic sectional view showing one embodiment of the present invention.
【００１０】図１に示すように、読出回路を形成したＳ
ｉ基板１の上に赤外線を反射させる金属反射板２を選択
的に形成し、この金属反射板２を含む表面に後工程で除
去して空隙３を形成するためのポリシリコン膜等からな
る犠牲膜を選択的に形成する。次に、この犠牲膜を含む
表面に熱伝導率が小さいＳｉＯ2 支持膜４を２００ｎｍ
の厚さに堆積し、犠牲膜上の領域を挟むＳｉＯ2 支持膜
４の上の両端に熱伝導率が小さいＴｉ電極５を２０ｎｍ
の厚さに形成する。As shown in FIG. 1, the S
A metal reflector 2 for reflecting infrared rays is selectively formed on the i-substrate 1, and a sacrifice made of a polysilicon film or the like is formed on a surface including the metal reflector 2 in a later step to form a gap 3. A film is selectively formed. Next, a SiO 2 support film 4 having a small thermal conductivity is formed on the surface including the sacrificial film to a thickness of 200 nm.
A Ti electrode 5 having a low thermal conductivity of 20 nm is deposited on both ends of the SiO 2 support film 4 sandwiching the region on the sacrificial film.
To the thickness of.
【００１１】次に、Ｔｉ電極５を含むＳｉＯ2 支持膜４
の上にゾルゲル法によりボロメータ材料である酸化バナ
ジウム膜を成膜する。Next, the SiO 2 support film 4 including the Ti electrode 5
A bolometer material vanadium oxide film is formed on the substrate by a sol-gel method.
【００１２】ここで、酸化バナジウム膜は次のような手
順により形成できる。Here, the vanadium oxide film can be formed by the following procedure.
【００１３】まず、ハナジウム金属のアルコキシドであ
るトリエトキシバナジルと溶剤のエトキシプロパノール
を用いてゾル溶液を作る。次に、このゾル溶液をスピン
コーターを用いてＳｉＯ2 膜４上に塗布し１５０℃で乾
燥させる。この工程を数回繰り返して１００ｎｍ程度の
厚さのゲル膜を形成する。このようにして作成したゲル
膜には炭素や水素の原子・分子が含まれているが、これ
らは空気中で４００℃の熱処理によってＨ2 ＯやＣＯ2
ガス等になって膜中から取り除かれＶ2 Ｏ5 膜が得られ
る。次に、このＶ2 Ｏ5 膜は３００〜４００℃の水素ガ
ス雰囲気中で８時間処理しＶＯ2 膜やＶ4 Ｏ9 膜に、ま
た数μＴｏｒｒの４５０℃の酸素ガス雰囲気中で２時間
処理してＶ6 Ｏ13膜に還元される。これらの薄膜はボロ
メータ材料として適しており、特にＶＯ2 膜の抵抗の温
度係数は０．０３５Ｋ-1と大きい。このようにしてＶＯ
2 膜７を形成することができる。次に、ＶＯ2 膜７上に
ゾル溶液をスピンコートし乾燥させ、４００℃の空気中
で１０分間処理しＶ2 Ｏ5保護膜８を約２０ｎｍの厚さ
に形成する。ここで上記のＶＯ2 膜７の比抵抗に比べて
Ｖ2 Ｏ5 保護膜８の比抵抗は１０００倍程度大きく、ま
た、Ｖ2 Ｏ5 保護膜８は酸化雰囲気中で安定である。従
って、ＶＯ2 膜７に殆どのバイアス電流が流れ、正常な
ボロメータ動作をすることが確認された。First, a sol solution is prepared using triethoxyvanadyl, which is an alkoxide of a metal of vanadium, and ethoxypropanol, which is a solvent. Next, this sol solution is applied onto the SiO 2 film 4 using a spin coater and dried at 150 ° C. This process is repeated several times to form a gel film having a thickness of about 100 nm. The gel film thus prepared contains carbon and hydrogen atoms and molecules, which are heat-treated in air at 400 ° C. to generate H 2 O and CO 2
It becomes gas or the like and is removed from the film to obtain a V 2 O 5 film. Next, this V 2 O 5 film is treated for 8 hours in a hydrogen gas atmosphere at 300 to 400 ° C., and is treated for 2 hours in a VO 2 film or a V 4 O 9 film, and in a 450 ° C. oxygen gas atmosphere of several μTorr. To be reduced to a V 6 O 13 film. These thin films are suitable as bolometer materials, and in particular, the temperature coefficient of resistance of the VO 2 film is as large as 0.035 K −1 . VO in this way
Two films 7 can be formed. Next, a sol solution is spin-coated on the VO 2 film 7, dried, and treated in air at 400 ° C. for 10 minutes to form a V 2 O 5 protective film 8 with a thickness of about 20 nm. Here, the specific resistance of the V 2 O 5 protective film 8 is about 1000 times larger than the specific resistance of the VO 2 film 7, and the V 2 O 5 protective film 8 is stable in an oxidizing atmosphere. Therefore, it was confirmed that most of the bias current flows through the VO 2 film 7 and the bolometer operates normally.
【００１４】これらの酸化バナジウム薄膜は、露光・現
像・エッチング工程によりパターニングされ、２次元ア
レイセンサの受光部となる。次に、この受光部はＳｉ基
板１からの熱分離をよくするため、ポリシリコンの犠牲
膜は最終工程でヒドラジンでエッチング除去され空隙３
が形成される。この際、ＶＯ2 膜７とＶ2 Ｏ5 保護膜８
を酸化シリコン膜または窒化シリコン膜で保護する必要
がある。本実施例では、プラズマＣＶＤによりＳｉＯ2
膜９を基板温度３５０℃で約５０ｎｍの厚さに成膜し
た。同工程の雰囲気はＶＯ2 膜７によって酸化雰囲気に
近いが、Ｖ2 Ｏ5保護膜８で被覆されているためＶＯ2
膜７は酸化されず抵抗の温度係数は劣化しない。These vanadium oxide thin films are patterned by the exposure, development and etching steps to become the light receiving portion of the two-dimensional array sensor. Next, in order to improve the thermal separation from the Si substrate 1 in this light receiving portion, the sacrificial film of polysilicon is removed by etching with hydrazine in the final step, and the gap 3
Is formed. At this time, the VO 2 film 7 and the V 2 O 5 protective film 8
Must be protected with a silicon oxide film or a silicon nitride film. In the present embodiment, SiO 2 is formed by plasma CVD.
The film 9 was formed at a substrate temperature of 350 ° C. to a thickness of about 50 nm. Is close to an oxidizing atmosphere the atmosphere in the same step by VO 2 layer 7, because it is covered with V 2 O 5 protective film 8 VO 2
The film 7 is not oxidized and the temperature coefficient of the resistance does not deteriorate.
【００１５】次に、ＳｉＯ2 膜９の上に赤外線吸収層と
してＴｉＮ膜１０を室温の反応性スパッタにより２０ｎ
ｍの厚さに成膜してパターニングし、ＴｉＮ膜１０が経
時変化したり、酸やアルカリに侵されないようにＴｉＮ
膜１０を含む表面にプラズマＣＶＤによりＳｉＯ2 膜１
１を１００ｎｍの厚さに堆積して保護膜を形成し、犠牲
膜をヒドラジンで除去して空隙３を形成してボロメータ
をＳｉ基板１から熱的に分離し赤外線センサを構成す
る。Next, a TiN film 10 as an infrared absorption layer is formed on the SiO 2 film 9 by a reactive sputtering at room temperature to a thickness of 20 nm.
m, and patterned to prevent the TiN film 10 from changing with time or being attacked by acid or alkali.
SiO 2 film 1 on the surface including film 10 by plasma CVD
1 is deposited to a thickness of 100 nm to form a protective film, the sacrificial film is removed with hydrazine to form a gap 3, and the bolometer is thermally separated from the Si substrate 1 to constitute an infrared sensor.
【００１６】ここで、赤外線吸収層であるＴｉＮ膜１０
と金属反射板２との間の距離は、検出したい波長（１０
μｍ）の１／４の間隔（２．５μｍ）に設定している。Here, the TiN film 10 which is an infrared absorption layer is used.
The distance between the metal reflector 2 and the wavelength to be detected (10
μm) (2.5 μm).
【００１７】なお、酸化バナジウム膜は、ゾルゲル法以
外にＲＦマグネトロンスパッタにより成膜することもで
きる。The vanadium oxide film can be formed by RF magnetron sputtering other than the sol-gel method.
【００１８】この場合、ＳｉＯ2 支持膜４の上にＴｉ電
極５を形成した基板をスパッタ装置内に装着し、基板温
度を４００℃に加熱して１×１０-6Ｔｏｒｒ以下まで真
空にした後、Ａｒガスを１００ＳＣＣＭの流量と１０ｍ
Ｔｏｒｒの圧力で導入して金属バナジウムターゲットを
クリーニングし、次にこのＡｒガス中に２．５％のＯ2
ガスを加えた状態で基板上にＶＯ2 膜７を１００ｎｍの
厚さに成膜する。次に、Ｏ2 ガスを１０％まで増やして
Ｖ2 Ｏ5 保護膜８を２０ｎｍの厚さに形成する。なお、
成膜中のＲＦパワーは１０Ｗｃｍ-2程度に設定した。In this case, the substrate having the Ti electrode 5 formed on the SiO 2 support film 4 is mounted in a sputtering apparatus, and the substrate temperature is heated to 400 ° C. to evacuate to 1 × 10 -6 Torr or less. , Ar gas at a flow rate of 100 SCCM and 10 m
The metal vanadium target is cleaned by introducing at a pressure of Torr, and then 2.5% O 2
The VO 2 film 7 is formed to a thickness of 100 nm on the substrate with the gas added. Next, the V 2 O 5 protective film 8 is formed to a thickness of 20 nm by increasing the O 2 gas to 10%. In addition,
The RF power during the film formation was set to about 10 Wcm −2 .
【００１９】[0019]
【発明の効果】以上説明したように本発明は、ボロメー
タ材料としての酸化バナジウム膜の表面を被覆する五酸
化バナジウム膜からなる保護膜を形成することにより、
ボロメータ型赤外線センサの感度を高めることができる
という効果を有する。As described above, according to the present invention, a protective film made of a vanadium pentoxide film covering the surface of a vanadium oxide film as a bolometer material is formed.
This has the effect of increasing the sensitivity of the bolometer-type infrared sensor.
【図１】本発明の一実施例を示す模式的断面図。FIG. 1 is a schematic sectional view showing an embodiment of the present invention.
【図２】従来の赤外線センサの一例を示す模式的断面
図。FIG. 2 is a schematic sectional view showing an example of a conventional infrared sensor.
１ Ｓｉ基板 ２ 金属反射膜 ３ 空隙 ４ ＳｉＯ2 支持膜 ５ Ｔｉ電極 ７，１３ ＶＯ2 膜 ８ Ｖ2 Ｏ5 保護膜 ９，１１ ＳｉＯ2 膜 １０ ＴｉＮ膜 １２ Ｓｉ3 Ｎ4 支持膜 １３ Ｓｉ3 Ｎ4 膜 １４ Ｓｉ3 Ｎ4 保護膜1 Si substrate 2 Metal reflective film 3 Void 4 SiO 2 support film 5 Ti electrode 7, 13 VO 2 film 8 V 2 O 5 protective film 9, 11 SiO 2 film 10 TiN film 12 Si 3 N 4 support film 13 Si 3 N 4 film 14 Si 3 N 4 protective film
Claims (2)
された支持膜の上に形成したボロメータ用の酸化バナジ
ウム膜と、前記酸化バナジウム膜の表面を被覆して形成
した五酸化バナジウム膜からなる第１の保護膜と、前記
第１の保護膜を含む表面に設けた第２の保護膜とを有す
ることを特徴とする赤外線センサ。1. A vanadium oxide film for a bolometer formed on a supporting film thermally separated through a gap provided on a substrate, and a vanadium pentoxide formed by covering the surface of the vanadium oxide film. An infrared sensor comprising: a first protective film made of a film; and a second protective film provided on a surface including the first protective film.
化シリコン膜の少くとも一つの膜からなる請求項１記載
の赤外線センサ。2. The infrared sensor according to claim 1, wherein the second protective film comprises at least one of a silicon oxide film and a silicon nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6265703A JP2655101B2 (en) | 1994-10-28 | 1994-10-28 | Infrared sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6265703A JP2655101B2 (en) | 1994-10-28 | 1994-10-28 | Infrared sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08128889A true JPH08128889A (en) | 1996-05-21 |
| JP2655101B2 JP2655101B2 (en) | 1997-09-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6265703A Expired - Fee Related JP2655101B2 (en) | 1994-10-28 | 1994-10-28 | Infrared sensor |
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| Country | Link |
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| JP (1) | JP2655101B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5966590A (en) * | 1996-10-29 | 1999-10-12 | Director General, Technical Research And Development Institute, Japan Defense Agency | Method for manufacturing thermal-type infrared sensor |
| US6127914A (en) * | 1997-05-19 | 2000-10-03 | Nec Corporation | Thin-film temperature-sensitive resistor material and production process thereof |
| KR100339353B1 (en) * | 1999-10-01 | 2002-06-03 | 구자홍 | micro bolometer and fabrication methode of the same |
| US6437331B1 (en) | 1998-08-13 | 2002-08-20 | Nec Corporation | Bolometer type infrared sensor with material having hysterisis |
| US6512229B2 (en) | 2000-03-07 | 2003-01-28 | Nec Corporation | Process for preparing a bolometer material and bolometer device |
| JP2008241438A (en) * | 2007-03-27 | 2008-10-09 | Nec Corp | Bolometer type thz wave detector |
| CN102092672A (en) * | 2010-12-31 | 2011-06-15 | 上海集成电路研发中心有限公司 | Method for manufacturing electric connection structure of micro-electro-mechanical system |
| US8502147B2 (en) | 2011-10-04 | 2013-08-06 | Flir Systems, Inc. | Microbolometer detector layer |
| US8692348B2 (en) | 2008-03-17 | 2014-04-08 | Hamamatsu Photonics K.K. | Photodetector |
| JP2015143684A (en) * | 2014-01-08 | 2015-08-06 | コミッサリア タ レネルジー アトミク エ オ エネルジー オルタネイティヴ | Sensitive material for bolometric detection |
-
1994
- 1994-10-28 JP JP6265703A patent/JP2655101B2/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5966590A (en) * | 1996-10-29 | 1999-10-12 | Director General, Technical Research And Development Institute, Japan Defense Agency | Method for manufacturing thermal-type infrared sensor |
| US6127914A (en) * | 1997-05-19 | 2000-10-03 | Nec Corporation | Thin-film temperature-sensitive resistor material and production process thereof |
| US6413385B1 (en) * | 1997-05-19 | 2002-07-02 | Nec Corporation | Thin-film temperature-sensitive resistor material and production process thereof |
| US6437331B1 (en) | 1998-08-13 | 2002-08-20 | Nec Corporation | Bolometer type infrared sensor with material having hysterisis |
| KR100339353B1 (en) * | 1999-10-01 | 2002-06-03 | 구자홍 | micro bolometer and fabrication methode of the same |
| US6512229B2 (en) | 2000-03-07 | 2003-01-28 | Nec Corporation | Process for preparing a bolometer material and bolometer device |
| JP2008241438A (en) * | 2007-03-27 | 2008-10-09 | Nec Corp | Bolometer type thz wave detector |
| US8692348B2 (en) | 2008-03-17 | 2014-04-08 | Hamamatsu Photonics K.K. | Photodetector |
| TWI457547B (en) * | 2008-03-17 | 2014-10-21 | Hamamatsu Photonics Kk | Photodetector |
| CN102092672A (en) * | 2010-12-31 | 2011-06-15 | 上海集成电路研发中心有限公司 | Method for manufacturing electric connection structure of micro-electro-mechanical system |
| US8502147B2 (en) | 2011-10-04 | 2013-08-06 | Flir Systems, Inc. | Microbolometer detector layer |
| JP2015143684A (en) * | 2014-01-08 | 2015-08-06 | コミッサリア タ レネルジー アトミク エ オ エネルジー オルタネイティヴ | Sensitive material for bolometric detection |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2655101B2 (en) | 1997-09-17 |
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