JPH08102553A - Element sealing type light emitting device - Google Patents

Element sealing type light emitting device

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Publication number
JPH08102553A
JPH08102553A JP23648494A JP23648494A JPH08102553A JP H08102553 A JPH08102553 A JP H08102553A JP 23648494 A JP23648494 A JP 23648494A JP 23648494 A JP23648494 A JP 23648494A JP H08102553 A JPH08102553 A JP H08102553A
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JP
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Patent type
Prior art keywords
light emitting
emitting device
element
light
sealing
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Pending
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JP23648494A
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Japanese (ja)
Inventor
Hiroshi Tajiri
博 田尻
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Rohm Co Ltd
ローム株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

PURPOSE: To minimize the lowering of clearness or deterioration of appearance of display caused by long-term use by avoiding a problem of discoloration of a conventional mold sealing type light emitting device. CONSTITUTION: In an element sealing type light emitting device provided with a mold sealing structure wherein an LED chip 4 which is a light emitting element is covered with a light transmitting sealing body 7, the sealing body 7 is formed of light transmitting low melting point glass whose molding point is about 130 to 350 deg.C, desirably, 200 or 150 deg.C or below.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本願発明は、素子封止型発光デバイスに関し、特に、LEDランプに代表されるように透光性を有する封止体によって発光素子がモールド封止されるように構成された発光デバイスに関する。 The present invention relates to relates element sealing light emitting devices, in particular, the light emitting element is configured to be sealed molded with the sealing member having a light transmitting property as represented by a LED lamp the present invention relates to a light-emitting device.

【0002】 [0002]

【従来の技術】たとえば、LEDランプの製造プロセスにおいては、所定の成形加工等を終えたリードフレームに対してLED素子をボンディングするとともにそのリード部との間にワイヤボンディング等を施した後、上記LED素子やワイヤボンディング部を封止するためのモールド工程が実行される。 BACKGROUND ART For example, in the manufacturing process of the LED lamp, after performing wire bonding between the lead portion with bonding the LED element to the lead frame after a predetermined molding or the like, the molding process for sealing the LED element, a wire bonding portion is performed.

【0003】このモールド工程においては、熱硬化性樹脂を用いて加熱金型内で上記LED素子の周辺部分が封止される。 [0003] In this molding step, the peripheral portion of the LED element is sealed in a heated mold using a thermosetting resin. 上記熱硬化性樹脂は、エポキシを主剤とする複合材料の形態が一般的であり、トランスファ成形法またはキャスティングモールド法との組み合わせによって上記モールド工程を行うのが通例である。 The thermosetting resin may be in the form of a composite material which is the main agent of the epoxy are common, perform the molding process by the combination of transfer molding or casting molding is customary.

【0004】なお、発光素子が樹脂封止される発光デバイスとしては、上記例示したLEDランプ以外に、たとえばイメージセンサの光源として使用されている発光デバイス、すなわちLED素子が所定のピッチで基板上にボンディングされる型式の発光デバイスなどがある。 [0004] Note that the light-emitting device emitting element is sealed with a resin, in addition to the above exemplified LED lamp, such as a light emitting device that is used as an image sensor light source, i.e. on the substrate the LED element at a predetermined pitch and the like type of light emitting devices bonded.

【0005】 [0005]

【発明が解決しようとする課題】ところで、上記LED The object of the invention is to be Solved by the way, the LED
ランプ等の発光デバイスは、各種の表示に供せられる表示ボード等の構成要素として使用されるが、その場合に、従来のように上記発光素子をを封止する材料としてエポキシ系樹脂を使用しいていたのでは、その封止体が長時間にわたって紫外線に晒されることなどに起因して黄色に変色する。 Lamp emitting device is used as a component of the display board or the like to be subjected to various displays, in that case, have to use an epoxy resin of a conventional light emitting device as a material for sealing the and than it had changes color due to such that the sealing body is exposed to ultraviolet light for a long time in yellow.

【0006】このため、上記封止体の透光性が阻害されるとともに、表示色あるいは表示態様が鮮明でなくなり、良好な視認性や見栄えを長期間にわたって維持できなくなるという不具合を招く。 [0006] Therefore, the translucency of the above encapsulant is inhibited, the display color or display form is not sharp, causing a problem that can not be maintained over a long period of time good visibility and appearance.

【0007】本願発明は、上述の事情のもとで考え出されたものであって、従来のモールド封止型の発光デバイスが有している変色の問題を回避して、長期使用に起因する表示態様あるいは見栄えの悪化を可及的に防止することをその課題とする。 [0007] The present invention, which has been proposed under the above circumstances, to avoid problems of discoloration light emitting device of the conventional mold-packed has a due to long-term use and its object is to prevent as much as possible the deterioration of the display mode or appearance.

【0008】 [0008]

【課題を解決するための手段】上記の課題を解決するため、本願発明では、次の技術的手段を講じている。 To solve the above problems BRIEF SUMMARY OF THE INVENTION In the present invention takes the following technical means.

【0009】すなわち、透光性を有する封止体により発光素子が覆われるモールド封止構造を備えた素子封止型発光デバイスであって、上記封止体を、透光性を有する低融点ガラスで形成したことを特徴としている。 [0009] That is, an element sealing light emitting device comprising a mold sealing light-emitting element is covered by a sealing member having a light-transmitting property, the sealing body, a low-melting glass having translucency It is characterized in in that the formed.

【0010】 [0010]

【発明の作用および効果】上記手段によれば、従来において発光素子のモールド封止体の材料として使用されていたエポキシ系樹脂に代表される熱硬化性樹脂に代えて、透光性を有する低融点ガラスを使用するようにしたから、封止体の変色ならびにこれに伴う発光阻害等が効果的に防止される。 According to the operation and effect of the invention The means, in place of the thermosetting resins represented by epoxy resin which has been used as a material for mold sealing of the light-emitting element in a conventional, low having translucency it is so arranged to use a melting glass, discoloration of the encapsulant and the light emitting inhibition etc. accompanying this is effectively prevented.

【0011】すなわち、従来において使用されていたエポキシ系樹脂等が備えている紫外線に対する悪特性あるいは弱特性に起因して、時間経過とともにその封止体が黄色に変色するといった不具合が回避されるのである。 [0011] That is, due to the poor characteristics or weak characteristics against UV epoxy resins have been used in the prior are provided, because the sealing body over time is avoided inconvenience to turned yellow is there.
詳しくは、紫外線による変色に対してガラスは優れた特性を備えていることから、低融点ガラスで封止されたL Specifically, since the glass that have excellent properties against discoloration by ultraviolet rays, which is sealed with low melting glass L
EDランプ等の発光デバイスが紫外線に晒されても、その封止体が黄色に変色するおそれは可及的に少なくなり、長期使用に対して良好な表示態様の鮮明度や見栄えの高品位を維持できることになる。 Even if the light emitting device ED lamp is exposed to ultraviolet light, they fear less as much as possible that its sealing body is turned yellow, high-quality definition and appearance of good display mode with respect to long-term use It will be able to maintain.

【0012】加えて、上記封止体として低融点ガラスを使用したことにより、たとえば高融点材料を使用する場合のようなモールド工程時における発光素子に対する極度な加熱およびこれに起因する発光素子やその周辺部の損傷等が防止され、ガラスを使用したにも拘らず不良品の発生を抑制できることになる。 [0012] In addition, by using a low-melting glass as the sealing member, the light emitting element and the resulting a super heating and to this with respect to the light-emitting element at the time of molding process, such as when using for example a refractory material damage to the peripheral portion is prevented, so that can suppress the occurrence of defective products despite using glass.

【0013】上記封止体を低融点ガラスで形成したことにより、従来のエポキシ系樹脂等と比較して耐薬品性についても優れた機能を発揮できることになる。 [0013] By having the sealing member is formed of a low-melting glass, so that can exhibit excellent functions for chemical resistance as compared with conventional epoxy resins.

【0014】 [0014]

【実施例の説明】以下、本願発明の好ましい実施例を、 DESCRIPTION OF EMBODIMENTS Hereinafter, a preferred embodiment of the present invention,
図面を参照しつつ具体的に説明する。 Specifically described with reference to the drawings.

【0015】図1は本願発明に係る素子封止型発光デバイスの第1実施例を示す斜視図、図2はその要部を示す拡大縦断正面図である。 [0015] Figure 1 is a perspective view showing a first embodiment of the element sealing light emitting device according to the present invention, FIG. 2 is an enlarged longitudinal sectional front view showing a main portion thereof.

【0016】図1に示すように、この第1実施例に係る素子封止型発光デバイスであるLEDランプ1の概略構成は、フレームのカソード側リード部2の上端に反射皿3が形成され、この反射皿3の凹部中央底面にLED素子4が導電性ペーストを用いてダイボンディングされている。 [0016] As shown in FIG. 1, a schematic configuration of an LED lamp 1 which is an element-sealed light-emitting device according to the first embodiment, the reflection plates 3 are formed on the cathode side upper end of the lead portion 2 of the frame, LED element 4 is die-bonded by using a conductive paste into the recess middle bottom surface of the reflecting dish 3. また、上記フレームのアノード側リード部5の上端は、上記LED素子4の一方側の電極部分に対してワイヤボンディング部6を介して接続されている。 The anode side upper end of the lead portion 5 of the frame are connected through a wire bonding portion 6 with respect to one side of the electrode portion of the LED element 4.

【0017】そして、図2に示すように、上記LED素子4、ワイヤボンディング部6、および両リード部2、 [0017] Then, as shown in FIG. 2, the LED element 4, a wire bonding portion 6, and both lead portions 2,
5の上端の周囲は、透明の低融点ガラスで構成された封止体7により覆われている。 Around the upper end of the 5 it is covered by a sealing body 7 made of a low-melting glass transparent. 上記低融点ガラスとしては、たとえばセレン、タリウム、ヒ素、硫黄などを加えることにより、その融点を約摂氏130〜350度としたものが使用される。 Examples of the low-melting glass, for example selenium, thallium, arsenic, by adding such as sulfur, those its melting point of about Celsius 130-350 ° is used. この場合、好ましくは、融点が摂氏200度以下(より好ましくは150度以下)の低融点ガラスが使用される。 In this case, preferably, a melting point of 200 degrees Celsius or less (more preferably 150 degrees or less) of low melting point glass is used.

【0018】したがって、このLEDランプ1は、表示ボード等の構成部品として使用された場合等における紫外線に晒されることによる黄色への変色が防止され、かつ耐薬品性に対して優れた特性を示すとともに、その製造時(モールド工程時)における上記LED素子4やワイヤボンディング部6に対する熱による悪影響が回避される。 [0018] Therefore, the LED lamp 1, exhibits excellent characteristics for construction discoloration to yellow due to exposure to UV in the case or the like which is used as a component can be prevented, and chemical resistance such as a display board with adverse effects due to heat can be avoided with respect to the LED element 4 and the wire bonding portion 6 at the time of its manufacture (when molding step).

【0019】なお、上記LEDランプ1の製造方法は、 [0019] The manufacturing method of the LED lamp 1,
特に限定されるものではないが、たとえば図3に示すように、タイバーやダムバー等により連結一体化されかつLED素子4やワイヤボンディング部6が所定の複数箇所に存在しているリードフレーム8に対して、加熱金型等を使用して上記複数箇所を透明の低融点ガラス7によりモールド封止する。 Although not particularly limited, for example, as shown in FIG. 3, with respect to the lead frame 8 which LED element 4 and the wire bonding portion 6 and is integrally connected by a tie bar and the dam bars and the like exists in a plurality of predetermined positions Te, using a heating mold or the like to mold sealing the low melting point glass 7 clear the plurality of locations. この後、上記リードフレーム8のタイバーやダムバー等を切断することにより、上記図示したような形態のLEDランプ1を得る。 Thereafter, by cutting the tie bars and dam bars and the like of the lead frame 8, to obtain the LED lamp 1 of the embodiment as illustrated above.

【0020】次に、本願発明の第2実施例を、イメージセンサの光源部分として使用される素子封止型発光デバイスを例に挙げて説明する。 Next, a second embodiment of the present invention, the element sealing light emitting device used as a light source portion of an image sensor as an example will be described.

【0021】図4に示すように、上記第2実施例に係る発光デバイスが適用されるイメージセンサ11の一般的な構造は、略矩形状のフレーム12の一面にガラス等の透明板13を配置し、プラテン14等によりバックアップされた読み取り原稿15を、上記透明板13の表面に直接的に接触した状態で搬送させるものである。 As shown in FIG. 4, the general structure of the second image sensor 11 that the light emitting device is applied according to embodiments, placing the transparent plate 13 of glass or the like on one surface of a substantially rectangular frame 12 and the read original 15 which has been backed up by the platen 14 or the like, it is intended to transport in a state of direct contact with the surface of the transparent plate 13. そして、上記フレーム12内には、読み取り原稿15に向けて照明光を照射する素子封止型発光デバイス10と、上記読み取り原稿15からの反射光を正立等倍に集光させるレンズアレイ17と、このレンズアレイ17により集光された光を受光する受光素子18とが配設されている。 Then, the above-described frame 12, the element sealing light-emitting device 10 which irradiates illumination light to the read original 15, a lens array 17 for focusing the reflected light from the read original 15 to erect a light receiving element 18 is arranged for receiving the light focused by the lens array 17.

【0022】上記素子封止型発光デバイス10は、基本的構成として、光源用基板19上において紙面と直交する方向に複数個のLED素子を備えている。 [0022] The element-sealed light-emitting device 10 includes, as basic structure, and a plurality of LED elements in a direction perpendicular to the paper surface on the light source substrate 19. また、上記受光素子18が搭載されている駆動用基板20上には、 Further, on the drive substrate 20 in which the light receiving element 18 is mounted,
受光素子18の駆動ならびにその受光信号の処理等を行う各種電子部品21が実装されている。 Various electronic components 21 for processing of the drive as well as the received light signal of the light receiving element 18 are mounted.

【0023】上記素子封止型発光デバイス10の詳細構造は、図5に示すように、両側縁に起立部22aを有するチップ搭載用基板22の底面部分にLED素子10a The detailed structure of the element-sealed light-emitting device 10, as shown in FIG. 5, LED elements 10a to the bottom surface portion of the chip mounting substrate 22 having a standing portion 22a on both side edges
がダイボンディングされている。 There are die bonding.

【0024】そして、上記LED素子10aの上方が、 [0024] Then, above the LED element 10a is,
上記と同様に透明の低融点ガラス23で封止された状態となっている。 It said and in a state sealed with low-melting glass 23 likewise transparent. したがって、この第2実施例によっても、上記第1実施例と同様の効果が得られることは言うまでもない。 Therefore, the second embodiment also, it goes without saying that the same effect as the first embodiment can be obtained.

【0025】なお、以上の各実施例で封止状態とされるLED素子は、赤色や緑色等の発光色を有するものであってもよいが、必要ならば、以下に示すような窒化ガリウム系化合物半導体の積層構造を備えた高輝度特性を有する青色発光素子を使用してもよい。 It should be noted, LED elements are sealed state in each of the embodiments described above, may have an emission color of red and green, etc., but if necessary, a gallium nitride-based as shown below the layered structure of the compound semiconductor may be used a blue light-emitting element having high brightness characteristics with.

【0026】すなわち、図6に示すように、透明のサファイア基板30上にはGaNのバッファ層31が形成され、このバッファ層31の表面上に、下層部分から順に、N型GaNの層32と、N型Al 0.2 Ga 0.8 Nの層33と、In 0.15 Ga 0.85 Nの発光層34と、P型A [0026] That is, as shown in FIG. 6, on a sapphire substrate 30 of transparent is formed the buffer layer 31 of GaN is, on the surface of the buffer layer 31, from the lower portion in order, a layer 32 of N-type GaN , a layer 33 of N-type Al 0.2 Ga 0.8 N, a light-emitting layer 34 of an in 0.15 Ga 0.85 N, P-type a
0.2 Ga 0.8 Nの層35と、P型GaNの層36と、 a layer 35 of l 0.2 Ga 0.8 N, a layer 36 of P-type GaN,
が形成される。 There is formed. この積層部37は、青色に対応した波長(好ましくは470nm)の光を発光させるようになっている。 The laminated portion 37 is configured (preferably 470 nm) wavelengths corresponding to blue to emit light.

【0027】加えて、上記N型GaNの層32およびN [0027] In addition, the N-type GaN layer 32 and the N
型Al 0.2 Ga 0.8 Nの層33にはSiが添加され、P Si is added to a layer 33 of type Al 0.2 Ga 0.8 N, P
型Al 0.2 Ga 0.8 Nの層35およびP型GaNの層3 Type Al 0.2 Ga 0.8 layer of N 35 and P-type GaN layer 3
6にはMgが添加されるとともに、上記In 0.15 Ga With Mg is added in 6, above an In 0.15 Ga
0.85 Nの発光層34にはZnが添加される。 The light emitting layer 34 of 0.85 N Zn is added. そして、上記In 0.15 Ga 0.85 Nの発光層34におけるInのGa Then, Ga of In in the light emitting layer 34 of the In 0.15 Ga 0.85 N
に対する組成比(混晶比)を増加させた場合には、この発光層34から発せられる光の波長が長くなるとともに、上記Znの添加量を増加させた場合には、上記組成比を増加させた場合よりもさらに光の波長が長くなるという特性を備えている。 In the case of increasing the composition ratio (mole ratio) for, together with the wavelength of the light emitted from the light emitting layer 34 becomes longer, the case of increasing the amount of the Zn increases the composition ratio has the property that further wavelengths of light longer than if. なお、上記各層の厚みは、下層側から各層32、33、34、35、36のそれぞれの順に、たとえば3μm、300nm、50nm、300 The thickness of each layer are each of the order of the layers 32,33,34,35,36 from the lower side, for example 3 [mu] m, 300 nm, 50 nm, 300
nm、150nmに設定されている。 nm, it is set to 150nm. また、上記の積層部37は、MOCVD法を用いて形成されるものである。 The above-mentioned laminated unit 37 is intended to be formed by MOCVD.

【0028】このような構成を備えた青色発光用のLE [0028] LE for blue light emission having such a structure
D素子を上記と同様に透明の低融点ガラスで封止してL The D element sealed with low melting glass transparent as above L
EDランプ等の発光デバイスを作製することにより、高輝度化が促進されている青色LEDの使用用途の拡大ならびに表示態様の適切化が期待できることになる。 By manufacturing the light-emitting device of the ED lamp, appropriateness of the enlarged and the display mode of the blue LED in the use applications where high brightness is promoted it can be expected.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本願発明の第1実施例に係る素子封止型発光デバイスであるLEDランプを示す単体斜視図である。 1 is a simple perspective view showing an LED lamp is a device-sealed light-emitting device according to a first embodiment of the present invention.

【図2】上記第1実施例に係る素子封止型発光デバイスの主要部の構成を示す拡大縦断正面図である。 2 is an enlarged longitudinal sectional front view showing a configuration of a main part of the element sealing light emitting device according to the first embodiment.

【図3】上記第1実施例に係る素子封止型発光デバイスの製造途中における状態を示す正面図である。 3 is a front view showing a state in course of manufacturing the element sealing light emitting device according to the first embodiment.

【図4】本願発明の第2実施例に係る素子封止型発光デバイスが組み込まれたイメージセンサを示す縦断正面図である。 4 is a vertical sectional front view showing an image sensor element sealing light emitting device according to the second embodiment is incorporated in the present invention.

【図5】上記第2実施例に係る素子封止型発光デバイスの主要部の構成を示す拡大縦断正面図である。 5 is an enlarged longitudinal sectional front view showing a configuration of a main part of the element sealing light emitting device according to a second embodiment.

【図6】上記各実施例における素子封止型発光デバイスの構成要素であるLED素子の詳細構造の一例を示す要部拡大縦断正面図である。 6 is an enlarged longitudinal sectional front view showing an example of a detailed structure of the LED element which is a component of the element sealing light emitting devices in the above embodiments.

【符号の説明】 1 素子封止型発光デバイス(LEDランプ) 4 発光素子(LED素子) 7 封止体 10 素子封止型発光デバイス 10a 発光素子(LED素子) 23 封止体 [Reference Numerals] 1 element sealing light emitting device (LED lamp) 4 light emitting element (LED element) 7 the sealing body 10 element sealing light emitting device 10a emitting element (LED element) 23 sealing body

Claims (1)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 透光性を有する封止体により発光素子が覆われるモールド封止構造を備えた素子封止型発光デバイスであって、 上記封止体を、透光性を有する低融点ガラスで形成したことを特徴とする、素子封止型発光デバイス。 1. A device-sealed light-emitting device comprising a mold sealing light-emitting element is covered by a sealing member having a light-transmitting property, the sealing body, a low-melting glass having translucency in characterized in that the formed, element sealing light emitting device.
JP23648494A 1994-09-30 1994-09-30 Element sealing type light emitting device Pending JPH08102553A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23648494A JPH08102553A (en) 1994-09-30 1994-09-30 Element sealing type light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23648494A JPH08102553A (en) 1994-09-30 1994-09-30 Element sealing type light emitting device

Publications (1)

Publication Number Publication Date
JPH08102553A true true JPH08102553A (en) 1996-04-16

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Application Number Title Priority Date Filing Date
JP23648494A Pending JPH08102553A (en) 1994-09-30 1994-09-30 Element sealing type light emitting device

Country Status (1)

Country Link
JP (1) JPH08102553A (en)

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WO2004082036A1 (en) * 2003-03-10 2004-09-23 Toyoda Gosei Co., Ltd. Solid element device and method for manufacture thereof
US7012332B2 (en) 2002-10-11 2006-03-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having sealing structure for wide gap type semiconductor chip
WO2007135754A1 (en) 2006-05-18 2007-11-29 Asahi Glass Company, Limited Process for manufacturing light emitting device and light emitting device
US7417220B2 (en) 2004-09-09 2008-08-26 Toyoda Gosei Co., Ltd. Solid state device and light-emitting element
US7470926B2 (en) 2004-09-09 2008-12-30 Toyoda Gosei Co., Ltd Solid-state optical device
US7497597B2 (en) 2004-01-19 2009-03-03 Toyoda Gosei Co., Ltd. Light emitting apparatus
US7999398B2 (en) 2006-08-03 2011-08-16 Toyoda Gosei Co., Ltd. Solid state device
US8490431B2 (en) 2006-08-03 2013-07-23 Toyoda Gosei Co., Ltd. Optical device and method for making the same
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US7012332B2 (en) 2002-10-11 2006-03-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having sealing structure for wide gap type semiconductor chip
CN101789482B (en) 2003-03-10 2013-04-17 丰田合成株式会社 Solid element device and method for manufacture thereof
US8685766B2 (en) 2003-03-10 2014-04-01 Toyoda Gosei Co., Ltd. Solid element device and method for manufacturing the same
US8154047B2 (en) 2003-03-10 2012-04-10 Toyoda Gosei Co., Ltd. Solid element device and method for manufacturing the same
US7824937B2 (en) 2003-03-10 2010-11-02 Toyoda Gosei Co., Ltd. Solid element device and method for manufacturing the same
EP2596948A2 (en) 2003-03-10 2013-05-29 Toyoda Gosei Co., Ltd. Method of making a semiconductor device
WO2004082036A1 (en) * 2003-03-10 2004-09-23 Toyoda Gosei Co., Ltd. Solid element device and method for manufacture thereof
US7497597B2 (en) 2004-01-19 2009-03-03 Toyoda Gosei Co., Ltd. Light emitting apparatus
US7470926B2 (en) 2004-09-09 2008-12-30 Toyoda Gosei Co., Ltd Solid-state optical device
US7417220B2 (en) 2004-09-09 2008-08-26 Toyoda Gosei Co., Ltd. Solid state device and light-emitting element
US8017967B2 (en) 2004-09-09 2011-09-13 Toyoda Gosei Co., Ltd. Light-emitting element including a fusion-bonding portion on contact electrodes
WO2007135754A1 (en) 2006-05-18 2007-11-29 Asahi Glass Company, Limited Process for manufacturing light emitting device and light emitting device
US7999398B2 (en) 2006-08-03 2011-08-16 Toyoda Gosei Co., Ltd. Solid state device
US8490431B2 (en) 2006-08-03 2013-07-23 Toyoda Gosei Co., Ltd. Optical device and method for making the same
WO2013153591A1 (en) 2012-04-09 2013-10-17 日本コルモ株式会社 Led device
US8847274B2 (en) 2012-04-09 2014-09-30 Nihon Colmo Co., Ltd. LED device
US9732940B2 (en) 2013-11-04 2017-08-15 Lextar Electronics Corporation Lighting apparatus and wavelength converting apparatus thereof

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