JPH08102467A - Conduction bump, conduction bump structure and their manufacture - Google Patents

Abstract

PURPOSE: To prevent generation of cracks and fatigue break due to mechanical deformation and thermal deformation, by constituting a bump of a lengthwise polyimide core and a dry plating layer on the core which is formed on a pad of a board containing a conducting element. CONSTITUTION: Only the head part of a lengthwise polyimide core 14 is exposed. A metal layer 17 composed of Ti, Ni and Au in order by sputtering is formed on the head part of the lengthwise polyimide core 14. Resist is eliminated and conduction bumps 19 are formed. By using the conduction bumps 19, a semiconductor element 11 is soldered to a board 20 for mounting, with Sn solder 21. When height irregularity exists a little among many the bumps 19, the gaps are absorbed by the lengthwise polyimide cores 14, so that cracks are not generated in an Al pad 12. When thermal or mechanical strain is generated, the lengthwise polyimide core 14 absorbs and relieves the strain, so that the root of the bump 19 is not broken.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a semiconductor element such as a flip chip for mounting an LSI chip, a semiconductor chip, a mounting substrate, a conductive tape, a connector, various sensors,
The present invention relates to a conductive bump, a conductive bump structure for electrically connecting a large number of conductive elements such as a probe and a liquid crystal circuit to each other all at once, and a manufacturing method thereof.

[0002]

2. Description of the Related Art Conventionally, for example, a conductive bump is often used for mounting and connecting a semiconductor element to a substrate for electrical conduction. As shown in FIG. 16, the conductive bumps are the pads 3 of the semiconductor element 2 on the wafer 1 (the peripheral edge is the protective film 2).
a. In general, the bumps 4 which are wet-plated with Au, Cu, solder or the like are provided on the above. However, in the case of wet plating, the height may be uneven or the top surface may be uneven. For example, the bump is Au
In the case of, when a solder is bonded to the other substrate, if a strong pressure is applied to absorb the gaps of uneven height and the deviation of the upper surface to some extent, the pad 3 is cracked and the circuit of the semiconductor element 2 is adversely affected. Exert. In addition, the roots of the bumps 4 may be broken due to the strain caused by the deformation due to the difference in thermal expansion and contraction between the semiconductor element 2 and the mating substrate.

As a measure against such a defect, Japanese Patent Laid-Open No. 2-2
In Japanese Patent No. 72737, as shown in FIG.
An organic polymer film such as a polyimide film is formed on a position adjacent to the protective film 2a by means such as photo-etching, and the upper part thereof is covered with Al, Cu, Au, Ni. It is described that the projection electrode layer 6 is provided by forming solder, etc. In addition, JP-A-3
In Japanese Patent Laid-Open No. 73535/1989, as shown in FIG. 18, a protrusion 5 of a heat-resistant resin film made of polyimide or the like is formed on a pad 3 of a semiconductor element 2 and further Cu film 7 and Pb- are formed by electroless plating. It is described that the protruding electrode layer 6 made of the Sn film 8 is provided.

By forming the protrusions 5 made of such polyimide, Japanese Patent Laid-Open No. 2-272737 describes that a protrusion electrode with high thermal and mechanical stress at the time of bonding can be provided. 3-735
JP-A No. 35-35 describes that the stress caused by heat and pressure at the time of bonding can be relaxed, so that the cracks generated in the protective film 2a can be reduced.

However, in each of these references, there is an example in which one polyimide is used, but when a large number of protrusions 5 made of polyimide are formed, the height between the individual protrusions 5 is increased. And the unevenness of the unevenness of the upper surface of the protrusion 5 remain as they are. When a large number of electrically conductive elements facing each other in such a state are electrically conducted,
Strains due to deformation due to thermal expansion and thermal contraction of individual bumps at the time of bonding are absorbed, but strains due to mechanical deformation generated when connecting the substrates are connected without being absorbed. Therefore, when a large number of electrically conductive elements facing each other are electrically connected to each other, they are broken at the roots of some of the bumps 4.

[0006]

SUMMARY OF THE INVENTION Therefore, the present invention is directed to a conductive bump in which cracks and fatigue fractures do not occur not only against thermal deformation but also against mechanical deformation, and a conductive bump structure using the bump. It is intended to provide a manufacturing method for them.

[0007]

A conductive bump of the present invention for solving the above problem is a bump for electrically connecting a large number of conductive elements facing each other, and the bump is one of A conductive bump comprising a vertically elongated polyimide core body formed on a pad of a substrate including a conductive element and a dry plating layer on the core body. In particular, the exposed outer surface of the polyimide core is preferably covered with an Al dry plating film, and the upper portion of this Al dry plating film is dry-plated in the order of Ti, Ni, and Au to form a three-layer metal layer. , Or Ti and Au or Ti and C
Even better are those with a two-layer metal layer dry-plated in the order u. Further, it is particularly preferable that the polyimide core has a convex cross section, that is, a stepped shape.

It is sufficient that the ratio of the length of the polyimide core (length in the vertical direction / length in the horizontal direction) is 1.0 or more.
If it is 1.3 or more, the strain due to mechanical deformation is completely absorbed, which is particularly preferable.

Further, the conductive bump structure of the present invention for solving the above-mentioned problems is a bump structure in which a large number of conductive elements facing each other are electrically connected to each other, and the bump bonding structure has one conductive structure. A substrate composed of a vertically elongated polyimide core body formed on a pad of a substrate including elements, a dry plating layer on the core body and a solder layer on the dry plating layer, and the vertically elongated polyimide core body facing each other. Is a conductive bump structure characterized in that it is at an equal distance from. In particular, the outer shape of the solder layer is preferably formed in a vertical cross-section, and the dry plating layer is preferably formed of an Al layer and a metal layer wettable by solder in order from the core side of the vertically long polyimide, Furthermore, the metal layer that gets wet with solder is A
It may be at least one layer selected from u, Cu, Ni, and Pd.

Further, a method of manufacturing a conductive bump of the present invention for solving the above-mentioned problems is a method of manufacturing a conductive bump on one of a large number of electrically conductive elements facing each other which are electrically conductive. Is applied, dried and exposed, and then repeatedly coated, dried and exposed, and then developed to leave a polyimide on the pad of the conductive element, which is cured to form a vertically elongated polyimide core. And a method for manufacturing a conductive bump.

In order to solve the above-mentioned problems, the method of manufacturing a conductive bump according to the present invention applies a photosensitive polyimide to one of a large number of electrically conductive elements facing each other which are electrically conductive,
Dry, expose, and develop to leave the polyimide on the pad of the conductive element, cure it to form a vertically elongated polyimide core, and solder it to the exposed outermost surface of the vertically elongated polyimide core. A wet-plated metal layer is formed, and a required amount of solder plate (solder layer) corresponding to the surface area of the dry-plated metal layer that wets the solder is provided at the joining position of the other conductive element, and then one conductive element A dry-plated metal layer that wets the solder is brought into contact with the solder plate of the other conductive element, and the dry-plated metal layer that melts the solder plate and wets the solder is wrapped and formed in a vertical cross-section to join the opposite conductive elements. And a method for manufacturing a conductive bump structure. In particular, after forming an Al dry plating layer on a vertically long polyimide core, it is preferable to form a dry plating metal layer that is wet with solder, and the dry plating metal layer that is wet with solder is one of Au, Cu, Ni and Pd. Even better is at least one metal layer.

[0012]

As described above, since the conductive bump of the present invention is composed of the vertically elongated polyimide core, when the substrates are connected to each other, there is some unevenness in height among the many bumps. Or, even if the top surface is biased slightly different for each bump, no cracks or the like occur. When a large number of electrically conductive elements facing each other are electrically conducted,
Even if some distortion due to mechanical deformation such as displacement occurs,
The vertical polyimide core can absorb and relax the strain, and the root of the bump is not broken. Due to the vertically elongated polyimide core, even if the polyimide core is insufficiently cured, a dry plating layer should be provided on the core for the purpose of completely curing the surface layer. It is what In the case of wet plating, the surface of the polyimide core body is wet-etched by pretreatment, and as a result, when the curing is insufficient, the unevenness of the height of many bumps becomes large. Therefore, it is preferable that a dry plating layer for increasing the surface temperature of the polyimide core body such as sputtering or ion plating is formed.

An Al dry plating film is preferable from the viewpoint of compatibility with polyimide. Furthermore, the upper part of the Al dry plating film is T
In the case of a three-layer metal layer in which i, Ni, and Au are dry-plated in this order, a general Sn alloy or Sn of the other conductive element is used.
When joined to solder (including hard solder) made of a contained alloy, Au of the outermost layer is joined to the conductive element of the other substrate, but its diffusion is prevented by the two layers of Ti and Ni. When Au or Cu is used for the outermost layer, Au-Au bonding or Cu-Cu bonding is performed by thermocompression bonding or ultrasonic bonding means with a metal layer in which the other conductive element is less likely to diffuse, for example, Au terminal or Cu terminal. When forming the junction, a double-layer metal layer of Ti alone may be used as the diffusion prevention layer. It is preferable that the vertically long polyimide core has a convex step shape because it has high mechanical strength.

In addition, the conductive bump bonding structure of the present invention configured as described above utilizes the advantages of the above-described vertically elongated polyimide core body, and the polyimide core body is formed at the center of the opposing substrates. By positioning it, the effect of strain due to mechanical deformation is relaxed so as to be minimized. When solder (including hard solder) is used, the shape of the solder is maintained as it is after the solder is once solidified, so that the effects of heat and mechanical strain are alleviated as much as possible. At this time, if the outer shape of the solder layer is formed in a vertical cross-section, the bonding strength between the substrate and the end surface of the polyimide core is high, and the intermediate bonding strength is relatively weak. Can follow the movement. Therefore, even if distortion occurs in a specific bump due to mechanical deformation of the conductive elements, the distortion can be absorbed and relieved by the conductive bump, and fatigue fracture is less likely to occur at the root of the conductive bump. The life is further increased. Also,
Since the core of the conductive bump is made of vertically long polyimide,
When the conductive elements are joined to each other, even if the bumps have some unevenness in height, the gap can be absorbed by the polyimide core, and no pressure is applied to the pads. Therefore, even if the height of the vertically long polyimide core is lowered, the pad is not cracked, and the conductive bump structure of stable quality is obtained.

Further, according to the method for manufacturing a conductive bump of the present invention, the excellent conductive bump described above can be manufactured easily and accurately and stably. In the method of applying a photosensitive polyimide, drying and exposing it, and then repeating coating, drying, and exposing again, and then developing it, a vertically elongated polyimide core having a high height can be easily manufactured. By making the longitudinal cross-section longitudinally long, it is possible to accurately and stably manufacture a core having a strong strength.

Further, according to the method of manufacturing the conductive bump structure of the present invention, the conductive bump structure having the above-mentioned excellent bump characteristics can be manufactured easily and accurately and stably. The Al dry plating layer is formed on the vertically long polyimide core as described above. If the dry-plated metal layer that is wet with solder is formed of at least one metal layer selected from Au, Cu, Ni, and Pd, it is easy to melt the solder to form a vertical cross-section. In addition,
The lengthwise length of the polyimide core is appropriately determined depending on the surface density of the bumps to be mounted, the surface area, the accuracy of the substrate, and the like.

[0017]

Example 1 First, a method of manufacturing a conductive bump will be described. As shown in FIG. 1, a negative photosensitive polyimide 13 is provided on the Al pad 12 (the peripheral edge of which is covered with the protective film 11a) of the semiconductor element 11 on the Si wafer 10, as shown in FIG. It was applied and dried to a film thickness of 40 μm. Next, as shown in FIG. 3, a square Al pad 12 having a side of 100 μm was exposed in a circular size having a diameter of 40 μm. Then, it was developed and cured to form a vertically long polyimide core 14 having a diameter of 30 μm and a height of 30 μm. Then Si wafer 10 to 40P
a, after ashing with oxygen plasma 500W x 1 minute,
As shown in FIG. 4, an Al film 15 having a thickness of 1 μm was formed on the entire surface of the wafer 10 by sputtering (Ar gas, 0.67 Pa, 1 kw). Next, as shown in FIG.
16 is coated, dried, and exposed and developed so that the resist on the Al pad 12 remains as shown in FIG. The Al film 15 other than the above was removed by etching. And A
The resist on the l-pad 12 was removed.

Next, as shown in FIG. 8, a second photosensitive resist is formed.
18 is applied to the entire surface, dried, exposed and developed, and only the head of the vertically elongated polyimide core 14 is exposed as shown in FIG.
By sputtering (Ar gas, 0.67 Pa, 1 kw), a metal layer 17 consisting of three layers of 2000 Å Ti, 2000 Å Ni and 2000 Å Au in the order of thickness was used as a vertical polyimide core.
Formed on 14 heads. Then, as shown in FIG. 10, the resist was removed to form conductive bumps 19.

A semiconductor element 11 is formed by using the conductive bumps 19.
Is soldered onto the mounting board 20 with Sn solder 21,
Even if the heights of the large number of bumps 19 are not uniform, the gap can be absorbed by the vertically long polyimide core 14 by brazing with a strong pressure. At that time, since no strong pressure was applied to the Al pad 12, no crack was generated and the semiconductor element 11 was not adversely affected. Further, even if the distortion due to the deformation due to the expansion difference or the contraction difference between the semiconductor element 11 and the mounting substrate 20 due to the thermal or mechanical strain occurs, the distortion should be absorbed and relaxed at the portion of the vertically elongated polyimide core body 14. At this time, if the vertically elongated polyimide core body 14 is located in a symmetrical position, it is particularly good and the root of the bump 19 is not broken. Moreover, in the conductive bumps 19 of the above-described embodiment, the head of the vertically elongated polyimide core 14 covered with the conductive Al film 15 is covered with the three-layer metal layer 17 of Ti, Ni, and Au. When it is joined to the Sn solder 21 of the mounting substrate 20, the Au—Sn eutectic alloy layer is formed and stable and firm joining is achieved.

In the above embodiment, the conductive bumps 19 are formed on the semiconductor element 11. However, conversely, the mounting substrate 20 is used.
The conductive bumps 19 may be formed on. Also,
Although the three-layer metal layer 17 of Ti, Ni and Au is coated only on the head of the vertically elongated polyimide core body 14, it may be coated on the entire surface. Further, the conductive bumps 19 may be appropriately provided in order to electrically connect other conductive elements such as a conductive tape, a connector, various sensors, probes, and liquid crystal circuits.

[0021]

[Embodiment 2] In the same manner as in Embodiment 1, as shown in FIG. 7, the surface of the vertically elongated polyimide core body (the ratio of the length in the longitudinal direction / the length in the lateral direction = 1.0) 14 and the Al pad 12 are Al other than
The film 15 was removed by etching and the resist was removed. next,
Figure by sputtering (Ar gas, 0.67Pa, 1kw)
As shown in FIG. 11, a conductive bump 19 was formed on which Ti 2000Å was covered with a Au 1 μm two-layer metal layer 17. When the semiconductor element 11 is bonded to the Au terminal 22 of the mounting substrate 20 by ultrasonic waves (pressure) using the conductive bumps 19 of the second embodiment, there is a slight unevenness in height among the many conductive bumps 19. However, since the vertically long polyimide core 14 absorbs the gap, a strong pressure is not applied to the Al pad 12 at that time,
No cracks are formed and the semiconductor element 11 is not adversely affected. Further, even if strain occurs due to deformation due to expansion and contraction differences due to thermal and mechanical strain between the semiconductor element 11 and the mounting substrate 20, the strain is absorbed and relaxed in the vertically elongated polyimide core body 14. Therefore, the root of the conductive bump 19 is not broken. Moreover, since the outermost surface of the conductive bump 19 of the second embodiment is covered with the two-layer metal layer 22 of Ti and Au, the Au terminal 22 of the mounting substrate 20 on the other side and the Au which is a soft metal are bonded to each other. Is Au-Au joined to form a stable and strong joint.

In the second embodiment, since the outermost surface of the conductive bump 19 is the two-layer metal layer 17 of Ti and Au, it is bonded to the Au terminal 22 of the mounting board 20 on the other side. When the metal layer 17 is a two-layer metal layer of Ti and Cu, the other mounting substrate 20 is joined to the Cu terminal 22.

In the second embodiment, the conductive bumps 19 are formed on the semiconductor element 11. On the contrary, the mounting substrate is used.
The conductive bumps 19 may be formed on 20. Further, the conductive bumps 19 can be appropriately provided to electrically connect other conductive elements such as a conductive tape, a connector, various sensors, a probe, and a liquid crystal circuit.

[0024]

[Embodiment 3] As in Embodiment 1, as shown in FIG. 12, the Al film 15 other than the surface of the vertically elongated polyimide core 14 and the Al pad 12 was removed by etching, and the resist was removed. Next, sputtering (Ar gas, 0.67 Pa, 1 k
According to w), the metal layer 17 composed of three layers of 2000 Å Ti, 2000 Å Ni and 2000 Å Au was used as the semiconductor element 11.
Was formed on the entire surface of. Next, although not shown, a photosensitive resist is applied, dried, and exposed and developed so that the resist on the Al pad 12 remains, and finally, as shown in FIG. After removing the metal layer 17 other than the outer surface and the Al pad 12 by etching, the Al pad 12
The upper resist was removed to form conductive bumps 19.

Then, a diagram for mounting and connecting the semiconductor element 11.
At a bonding position of the substrate 20 shown in FIG. 12, a required amount of a Pb-Sn alloy solder plate corresponding to the surface area of the outermost metal layer 17 of the vertically elongated polyimide core body 14 formed in the first embodiment.
21 was set up. After that, the metal layer 17 on the outermost surface of the vertically elongated polyimide core body 14 of the semiconductor element 11 is brought into contact with the solder plate 21 of the Pb-Sn alloy of the substrate 20 to melt the solder plate 21, and as shown in FIG. Then, the semiconductor device 11 and the substrate 20 facing each other were joined by enclosing the conductive bumps 19 and making the outer shape a vertical cross-section. Example 3 created in this way
In the conductive bump bonding structure, since the solder 21 'that bonds the semiconductor element 11 and the substrate 20 wraps the conductive bump 19 and has an outer shape of a vertical cross section, the bonding area is large and the bonding strength is high. The middle part can follow the movement of a thin and vertically long polyimide core. Therefore, even if the strain due to the thermal expansion difference or the contraction difference between the semiconductor element 11 and the substrate 20 and the strain due to the mechanical deformation occur, the strain can be absorbed and relaxed by the vertically elongated polyimide core body 14 and the conductivity can be obtained. The roots of the bumps 19 do not easily cause fatigue fracture and the life of the bumps is extended.

Further, since the core of the conductive bump 19 is the vertically long polyimide 14, even if there is some unevenness in height among the many bumps when the semiconductor element 11 and the substrate 20 are joined, the gap between them is reduced. It can be absorbed by the vertically long polyimide core 14. Therefore, no pressure is applied to the Al pad 12,
The Al pad has no cracks and has a stable conductive bump structure. Although the outer surface of the conductive bump 19 is Au in the above embodiment, Cu, Ni or Pd may be used. In the above embodiment, the conductive bump is used.
Although 19 is provided on the semiconductor element 11 side, it may be provided on the substrate 20 side. Furthermore, the conductive bump bonding structure of the present invention is not only applied to bonding the semiconductor element 11 and the substrate 20, but also a conductive tape, a connector, various sensors, a probe,
It can also be applied to joining conductive elements such as liquid crystal circuits.

[0027]

[Embodiment 4] As shown in FIG. 1, as shown in FIG. 2, a negative type photosensitive film is formed on an Al pad 12 (a peripheral edge of which is covered with a protective film 11a) of a semiconductor element 11 on a Si wafer 10. Polyimide 13 was applied and dried to a film thickness of 40 μm. Next side
A 100 μm square Al pad 12 was exposed in a circular size having a diameter of 40 μm. Then, on this exposed portion 23, as shown in FIG. 15, a negative photosensitive polyimide 13 'is formed.
Was applied, dried to a total film thickness of 80 μm, and re-exposed in a circular size having a diameter of 20 μm. Then, when developed and cured, this re-exposed portion 24 is replaced by the first exposed portion 23.
The cross-sectional shape is a vertically elongated polyimide core. The size of the lower part is 30 μm in diameter × 30 μm in height, and the upper part is 15 μm in diameter × 30 μm in height. Then, following the same procedure as in Example 1, Ti with a thickness of 2000 Å
Then, a metal layer 17 consisting of three layers of Ni having a thickness of 2000Å and Au having a thickness of 2000Å was formed on the head Al film of the core body 14 of the convex-shaped polyimide, and the conductive bumps 19 were formed. This conductive bump
The semiconductor element 11 is mounted on the mounting substrate 20 using 26,400 19 Au.
Even when brazing with Sn brazing, no cracks or the like were formed in each Al pad 12.

[0028]

As can be seen from the above description, the conductive bumps of the present invention have a large number of bumps with uneven heights or a plurality of bumps when the conductive elements facing each other are joined. Even if there is a bias, the gap can be absorbed by the vertically long polyimide that is the core of the bump, and the pad is not cracked due to strain due to mechanical deformation. Even if a strain due to a difference in thermal expansion or contraction or a strain accompanied by a mechanical deformation occurs in some of them, the strain can be absorbed and relaxed by the vertically elongated polyimide core and the root of the bump is not broken. A stable conductive bump is realized.

In addition, Al is added to the vertically long polyimide core body.
When the dry plating film is used, the adhesiveness with the polyimide core is good and the adhesiveness with the metal layer thereon is also good. Further, in order to establish electrical conduction on the Al dry plating film via the solder layer, a metal layer that is easily wetted by solder is effective as a metal layer on the Al film in terms of bonding strength. When the Sn eutectic alloy layer is formed, stable and strong bonding can be obtained, so that there is an effect that the solder layer can be thin, that is, the bonding interval between the conductive elements can be narrowed. These effects are the same even when Au-Au bonding or Cu-Cu bonding is formed.

Further, according to the method for manufacturing a conductive bump of the present invention, a large number of the above-mentioned excellent conductive bumps can be manufactured with high accuracy and at the same time. In particular, it is possible to efficiently manufacture by removing a part of the resist to expose the head of the vertically long polyimide core body and providing the metal layer only on the head. Further, by forming the vertically elongated polyimide core by the method for producing conductive bumps of the present invention into a stepped shape having a convex shape, strong mechanical strength can be obtained. There is an effect that a polyimide core is obtained.

On the other hand, according to the bonding structure for the conductive bumps of the present invention, even if there is some unevenness in height among a large number of bumps when the conductive elements are bonded to each other, the gap is made between the above-mentioned vertically elongated polyimides. It can be absorbed by the core, pressure is not applied to the pad, cracks do not occur, and a stable conductive bump structure is obtained. It should be noted that if the vertically long polyimide cores are at the same distance from the opposing substrates, the effect of alleviating mechanical strain is further exerted. In this case, if the outer shape of the solder layer is formed in a vertical cross-section, the joining area is large and no extra solder is used, so that the distance between the substrates can be shortened. The above-mentioned effects are obtained by the above-mentioned Au-Sn eutectic alloy, Au-Au bonding, and Cu.
The same applies to the case of -Cu bonding.

Further, according to the method for manufacturing the conductive bump structure of the present invention, the conductive bump structure having the above-mentioned excellent bump characteristics can be easily and accurately manufactured in a stable manner.

[Brief description of drawings]

FIG. 1 is a diagram showing a step in one embodiment of a method of manufacturing a conductive bump and a conductive bump structure of the present invention.

FIG. 2 is a diagram showing a step in one embodiment of a method for manufacturing a conductive bump and a conductive bump structure of the present invention.

FIG. 3 is a diagram showing a step in one embodiment of a method of manufacturing a conductive bump and a conductive bump structure of the present invention.

FIG. 4 is a diagram showing steps in one embodiment of a method of manufacturing a conductive bump and a conductive bump structure of the present invention.

FIG. 5 is a diagram showing a step in one embodiment of a method of manufacturing a conductive bump and a conductive bump structure of the present invention.

FIG. 6 is a diagram showing a step in one embodiment of a method of manufacturing a conductive bump and a conductive bump structure of the present invention.

FIG. 7 is a diagram showing a step in one embodiment of the method of manufacturing the conductive bump and the conductive bump structure of the present invention.

FIG. 8 is a diagram showing a step in one embodiment of a method for manufacturing a conductive bump and a conductive bump structure of the present invention.

FIG. 9 is a diagram showing a step in one embodiment of the method of manufacturing the conductive bump and the conductive bump structure of the present invention.

FIG. 10 is a diagram showing each step in one embodiment of the method of manufacturing the conductive bump structure of the present invention.

FIG. 11 is a diagram showing each step in one embodiment of the method of manufacturing the conductive bump structure of the present invention.

FIG. 12 is a diagram showing each step in one embodiment of the method of manufacturing the conductive bump structure of the present invention.

FIG. 13 is a diagram showing an example of a conductive bump structure of the present invention.

FIG. 14 is a diagram showing an embodiment of a method for manufacturing a conductive bump and a conductive bump structure of the present invention.

FIG. 15 is a diagram showing an example of a method for manufacturing a conductive bump structure of the present invention.

FIG. 16 is a diagram showing a conventional conductive bump.

FIG. 17 is a diagram showing a conventional conductive bump.

FIG. 18 is a diagram showing a conventional conductive bump.

[Explanation of symbols]

 14 Vertically long polyimide core 15 Al layer 17 Metal layer 19 Conductive bump 21 Solder

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yasunori Kamata 2-7-3 Shinmachi, Hiratsuka-shi, Kanagawa Tanaka Kikinzoku Kogyo Co., Ltd. Technology Development Center

Claims (13)

[Claims] 1. A bump for electrically conducting a large number of conductive elements facing each other, wherein the bump is a vertically elongated polyimide core body formed on a pad of a substrate including one conductive element, and A conductive bump comprising a dry plating layer on the core. 2. The conductive bump according to claim 1, wherein the exposed outer surface of the vertically elongated polyimide core is covered with an Al dry plating film. 3. A bump for electrically connecting a large number of conductive elements facing each other through a solder layer, the bump having a vertically long shape formed on a pad of a substrate including one conductive element. A polyimide core, the outer surface of which is A
1. A conductive bump comprising a dry plating film, and an Al dry plating film having a three-layer metal layer dry-plated in the order of Ti, Ni, and Au. 4. A plurality of conductive elements facing each other are Au--
A bump for electrically conducting through an Au bonding layer or a Cu-Cu bonding layer, the bump being a vertically long polyimide core body formed on a pad of a substrate including one conductive element, and the core. A conductive bump, wherein the outer surface of the body is made of an Al dry plating film, and the upper portion of the Al dry plating film is made of a two-layer metal layer dry-plated in the order of Ti and Au or Ti and Cu. 5. The conductive bump according to claim 1, wherein the vertically elongated polyimide core has a convex cross section. 6. A bump-bonding structure in which a large number of conductive elements facing each other are electrically connected to each other, and the bump-bonding structure is formed of a vertically long polyimide film formed on a pad of a substrate including one conductive element. A conductive bump structure comprising a core body, a dry plating layer on the core body, and a solder layer on the dry plating layer, wherein the vertically elongated polyimide core bodies are located at equal distances from opposite substrates. 7. The conductive bump structure according to claim 6, wherein the outer shape of the solder layer is formed in a vertical drum shape. 8. The conductive bump structure according to claim 6, wherein the dry plating layer is formed of an Al layer and a metal layer wettable by solder in this order from the vertically elongated polyimide core body side. 9. The solder wettable metal layer is Au, Cu, N.
9. The conductive bump structure according to claim 6, comprising at least one layer selected from i and Pd. 10. A method of manufacturing a conductive bump on one of a large number of electrically conductive elements facing each other that are electrically conductive, wherein a photosensitive polyimide is applied, dried and exposed, and then applied, dried and exposed again. After that, development is performed to leave the polyimide on the pad of the conductive element, and the polyimide is cured to form a vertically long polyimide core body. 11. A photosensitive polyimide is applied to one of a large number of electrically conductive elements facing each other which are electrically conductive, and is sequentially dried, exposed and developed to leave a polyimide on the pad of the electrically conductive element and then cured. Forming a vertically elongated polyimide core, forming a dry plating metal layer that wets the solder on the outermost surface of this vertically elongated polyimide core, and a dry plating metal layer that wets the solder at the joining position of the other conductive element. Dry plating that wets the solder of one conductive element by contacting the solder layer of the other conductive element with a required amount of solder plate that corresponds to the surface area of the other, and then wet the solder by melting the solder plate A method for manufacturing a conductive bump structure, which comprises wrapping a metal layer and forming a vertical cross-section in a drum shape and joining conductive elements facing each other. 12. The production of a conductive bump structure according to claim 11, wherein an Al dry plating layer is formed on a vertically long polyimide core, and then a dry plating metal layer wettable with solder is formed. Method. 13. The dry-plated metal layer that is wet with solder is A.
14. The method for manufacturing a conductive bump structure according to claim 12, comprising at least one metal layer selected from u, Cu, Ni and Pd.