JPH07335582A - Single-wafer heat-treatment apparatus - Google Patents

Abstract

PURPOSE:To provide a heat-treatment apparatus whose sufficient strength can be ensured even when the diameter of a semiconductor wafer to be treated is large to be at 8 to 12'' in a single-wafer treatment apparatus. CONSTITUTION:A single-wafer heat-treatment apparatus is constituted in such a way that a heating element is arranged in the upper-part position of a reaction container 1, that heat from the heating element is passed through a container ceiling part 1a and that a wafer which is arranged and installed in a prescribed position inside the container 1 can be heated and treated. In the single-wafer heat-treatment apparatus, the container ceiling part 1a which receives the heat form the heating element is formed as a substantially transparent quartz glass part, and most regions in the circumferential part of the container up to a lower-end sealing part from a heat-receiving part are formed as a nontransparent (semitransparent and opaque) quartz glass part which is formed by containing air bubbles.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quartz heat treatment apparatus for heat treatment of wafers, and is particularly suitable for use in a so-called single-wafer treatment apparatus for performing vacuum film formation, diffusion or chemical (CVD) treatment of wafers one by one. The present invention relates to a heat treatment apparatus made of quartz.

[0002]

2. Description of the Related Art Conventionally, when a wafer is subjected to film formation, diffusion or chemical treatment, a plurality of wafers are stacked and arranged on a boat, and the boat is inserted together with the wafer into a reaction vessel for a predetermined heat treatment. A so-called batch-type processing method is used. However, in this processing method, the air flow is disturbed at the contact portion between the boat and the wafer, and the processing quality at that portion is deteriorated. Wafer diameter is 6 "(inch)
From 8 "to 12", it is difficult to manufacture a boat and its supporting portion to cope with an increase in weight burden in the batch processing method, and the size of the reaction vessel becomes large due to the increase in diameter. And further, the heating temperature distribution and the gas distribution become non-uniform due to the increase in size, and further, the heating power source becomes unnecessarily increased. Furthermore, in the manufacturing process of next-generation, highly integrated semiconductors such as 64M and 1G, processing accuracy in submicron units is required. Therefore, in the method of collectively processing a plurality of wafers, the upper and lower sides of the wafer stacking position are Also, the processing conditions on the gas inflow side and the exhaust side respectively vary, and they affect each other between the stacked wafers, and moreover, particles and the like are generated from the contact part with the boat, and in any case high quality processing Was difficult.

In order to solve such a drawback, in recent years, in order to cope with the increase in the diameter of wafers and further the higher integration density and higher quality of the next-generation semiconductors, heat treatment is performed for each wafer. Leaf-type heat treatment equipment is drawing attention. Such a single-wafer heat treatment apparatus can be divided into a heater provided inside the reaction container and a heater provided outside the reaction container.

FIG. 9 shows an example of one in which a heater is installed in a reaction vessel (Source: 1994 edition, VLSI manufacturing test equipment guidebook (published by the Industrial Research Board), Table 5, page 58), 101 is a stainless steel chamber (reaction vessel)
Then, at the center position of the wafer 1 via the susceptor 102.
No. 03 is mounted, the heating element 104 is arranged above it, and the gas nozzle 105 is arranged below it, and the surroundings are covered with a water cooling shroud 106. Incidentally, 107 is a vacuum pump.

On the other hand, as an external heater type device, some are disclosed in Table 3 on page 56 of the above-mentioned guidebook. Especially, as shown in FIG. 10, a wafer 110 is housed for heating from above the wafer. The upper opening of the stainless steel container 111 is sealed with a quartz glass window 112, and the heat generating lamp 1 is placed on the quartz glass window 112.
13 and the lamp housing 114 are arranged so that the wafer 110 receives / heats heat through the quartz glass window 112. In the figure, 115 is a gas inlet, 11
Reference numeral 6 is a gas distributor plate, and 117 is an exhaust passage connected to a vacuum pump.

[0006]

However, as can be understood from FIG. 9, in the heater insertion type apparatus, since the heater is inserted in the container, the reaction container becomes large in size. Since the water-cooled shroud that shields the heat between the container and the heating area is arranged in the container, problems tend to occur in terms of heat distribution. Since the heater and the wafer directly face each other, there is a problem that contaminants from the heater adhere to the wafer and are easily contaminated.

On the other hand, in the heater external type apparatus shown in FIG. 10 as well, in order to prevent thermal deterioration of the O-ring provided in the sealing portion 112a at the upper end of the stainless steel container 111 and the quartz glass window portion 112, the sealing is performed. It is necessary to water-cool the vicinity of the stopper 112a, and this does not lead to elimination of the above-mentioned drawbacks in terms of soaking distribution and complication of the structure. Further, in any of the above techniques, the problem of metal contamination occurs because the stainless steel container 111 is used as the reaction container.

For this reason, as the whole reaction vessel, a vessel made of transparent glass is being studied like the conventional core tube. For example, in Table 3 on page 56 of the above-mentioned guidebook, a reaction vessel consisting of an end plate and a lower vessel is shown. Although proposed, if the container is divided into two, the deterioration of the O-ring of the sealing portion is still apt to be a problem. Therefore, as in the conventional vertical core tube, a single-wafer wafer heat treatment apparatus having a substantially dome shape or a substantially cylindrical body in which one end of a cylindrical body is welded with a flat plate or a hemispherical end plate is also under study.

However, in the past, the shape of the wafer was almost as small as 6 ", and it was possible to form a reaction container by welding. However, in recent semiconductor wafer processing steps, the size is increased to 8-12". Along with this, the reaction vessel has become large in size, and it has become difficult to perform welding processing in terms of processing and strength. Also, the quartz glass reaction vessel is made transparent to allow heat to be received from the outside, but making the reaction vessel transparent makes it possible to heat the wafer to an unneeded range in order to improve the thermal uniformity. As a result, unnecessary reactions and adverse effects of heat on peripheral equipment occur. Since it is also transparent and has good heat conductivity, it is necessary to provide a flange or the like that constitutes the sealing portion at a position considerably distant from the heating area, and as a result, the diameter of the container increases as the diameter of the wafer increases. At the same time, since the sealing portion is retracted from the heating area, the height also increases and the size becomes large. INDUSTRIAL APPLICABILITY The present invention, in a single-wafer heat treatment apparatus with an external heater, provides sufficient strength even when the semiconductor wafer to be processed has a large diameter of 8 to 12 ″, in other words, even when the reaction container is large. It is an object of the present invention to provide a heat treatment apparatus that can secure the heat treatment device while preventing heat to a range unnecessary for heating the wafer while ensuring heat retention and soaking property of the wafer heating area. Another object of the present invention is to provide a heat treatment apparatus that can effectively prevent unnecessary reactions and adverse effects of heat on the sealing unit and peripheral equipment. The object is to provide a heat treatment apparatus that facilitates the operation.

[0010]

According to the present invention, a heating element is arranged above a reaction container, and heat from the heating element can be heat-treated on a wafer arranged at a predetermined position in the container through the ceiling of the container. The present invention relates to a single-wafer-type wafer heat treatment apparatus with an external heater, as shown in FIGS. 1 and 2, in which the container ceiling for receiving the heat of the heating element is a substantially transparent quartz glass portion. Further, most of the area around the container from the heat receiving portion to the lower end sealing portion is a non-transparent (translucent and opaque) quartz glass portion formed by containing bubbles. The reaction container is formed in a substantially hemispherical shape, a substantially dome shape, or a substantially cylindrical shape. In such a reaction container, a non-transparent portion of the container ceiling portion and the peripheral portion thereof has a welded portion. It is preferred that it is not substantially a unitary body. In this case, it is preferable that the entire container except the flange portion is integrally formed. The lower end opening of the reaction vessel may be integrated as it is, but it is also necessary to join a flange or the like to the outer edge of the circular lower end opening and to weld other members to the non-heated portion. In order to achieve the later-described action, it is necessary that the heating region part adjacent to the container ceiling part of the above-mentioned part is, together with the container ceiling part, a substantially one-piece body in which no welding portion exists.

The definition of transparent or non-transparent is preferably defined by heat rays because it is necessary to allow heat rays to pass from the container ceiling to the wafer surface. Therefore, the container ceiling has a heat ray (wavelength 2 μm). ) A transparent part having a transmittance of 85% or more, and at least the heating region adjacent to the container ceiling has a heat ray (wavelength 2 μm) transmittance of 30% underneath.
It is preferable to set the following container peripheral portion in order to achieve the later-described action. Further, if only the surface is made non-transparent like the sand blast in the container peripheral part, heat is propagated from the inside of the container wall to the lower end opening side, which causes an unfavorable result. Is preferably prevented. That is, specifically, the bubble content of the peripheral region of the container, where the bubble density is stable, excluding the area adjacent to the container ceiling, in other words, the heating region, is 10 to 25 mm in diameter.
0 μm bubbles 20,000 / cm ³ or more, preferably 4
It is preferable that the number is 50,000 / cm ³ or more.

If there is a clear interface between the ceiling of the container and the peripheral part of the container, such as by welding, the interface is locally heated, or heat rays are scattered and reflected inhomogeneously. Therefore, since there is a possibility that the body to be heated filled therein is heated inhomogeneously, the present invention does not have a clear interface of contained bubbles between the container ceiling part and the container peripheral part, and is stepless. The included bubble density is variable. Then, it is preferable that the portion where the bubble density is changed substantially corresponds to the heating region. Even in the peripheral portion of the container where the bubble density is stable, a transparent portion such as a window may be partially provided. In this case, it is preferable that a transparent window portion for grasping a wafer processing state is provided in the peripheral portion of the container, and the non-transparent portion of the window portion and the peripheral portion of the container is substantially a single body where no welding portion exists. Further, the wafer is preferably arranged in a non-transparent region below the transparent region of the container ceiling. Further, it is preferable that the reaction container is placed on a support table on which a wafer is installed via a sealing part, and the reaction container and the support table are separable in the contact and separation directions. It is preferable to provide these fluid paths only on the support base side without providing the gas introduction passage and the discharge port on the reaction container side.

[0013]

According to the above technical means, the container ceiling portion (and the peep window portion if necessary) located on the ceiling side is substantially transparent, and more specifically, it is a transparent portion having a heat ray transmittance of 85% or more. For this reason, the heat rays can be taken into the wafer in the container without waste, and effective heating can be performed even with an external heater type device. Also, most of the area around the container from the ceiling of the container to the lower end opening is non-transparent glass with poor heat ray transmission and heat conduction, specifically, the area around the vessel having a heat ray transmittance of 30% or less. Improving the heat retention of the wafer heating area located at, and effectively preventing the entry of bad heat rays into the so-called unnecessary heating area of the opaque area around the container, improving the uniform heat distribution inside the container, and ensuring high uniformity. You can get quality productivity. Further, the non-transparent portion of the container peripheral portion has a low heat ray transmission, in other words, even if the wafer is heated through the container ceiling portion, the temperature in the container peripheral portion reaching the lower end opening does not unnecessarily rise, Flange sealing is possible using the O-ring as it is.

Therefore, it is not necessary to heat the wafer to an unneeded range, and unnecessary reactions and adverse effects due to heat do not occur in peripheral equipment, and the heating area and the sealing section are provided around the container. Since the heat can be cut off, it is possible to bring the heating area and the sealing portion close to each other to some extent without providing a water cooling jacket or the like, and as a result, it is possible to reduce the size and flatten the device. Further, since the present invention has at least the container ceiling portion and the heating area around it which are substantially integrally formed without welding portions, in other words, there is no welding interface, etc. Damage and destruction due to distortion can be avoided.

Further, being substantially integrated means that the mechanical strength is locally or locally reduced even when heated under vacuum or around 1000 ° C. without causing local strain or unbalanced load. There is no. The non-transparency can also be performed by sandblasting, but the sandblasting is performed by spraying sand only on the surface of the transparent quartz glass to perform the unevenness treatment. Therefore, in such a method, only the outer surface is made opaque. Therefore, when etching or heat treatment is performed, it becomes transparent, and since the inside is transparent, heat rays propagate through the inside of the wall to the flange side.

According to the present invention, the peripheral portion of the container is not made to be non-transparent only by sandblasting, but is made to be non-transparent to the inside by air bubbles. Can be eliminated. Furthermore, the present invention does not have a clear interface of contained bubbles between the container ceiling part and the container peripheral part, and by changing the included bubble density steplessly, even the bubble interface does not exist, and the strength is further improved. In addition, the heat can be gradually lowered as the container goes from the ceiling to the extension, and a hot atmosphere capable of high-quality wafer processing with good heat balance can be obtained.

Further, according to the present invention, by increasing the mechanical strength, it becomes possible to perform high-speed heating and high-speed cooling in the wafer processing process, thereby improving the productivity.

Since the transparent window portion provided around the container is a substantially integrated body with no welded portion, it is preferable in terms of airtightness and manufacturing. Moreover, the wafer is preferably arranged in a non-transparent region below the transparent region on the ceiling of the container so that the wafer can be visually recognized and heat can be kept. Further, by making the reaction vessel and the support table on which the wafer is installed separable in the contact and separation directions, the wafer replacement work is facilitated, and a gas introduction passage and a discharge port are provided especially on the reaction vessel side. However, by providing these fluid paths only on the side of the support base, the movable part for moving up and down can be the reaction container and the heating element above it, in other words, there is no need to move the fluid path up and down. In addition, the equipment can be simplified. Further, since a metal jacket is not used for the reaction container, not only the inside of the apparatus can be easily confirmed, but also the window and the like can be easily formed integrally.

[0019]

Embodiments of the present invention will now be illustratively described in detail with reference to the drawings. However, the dimensions, materials, shapes, relative positions and the like of the components described in this embodiment are not intended to limit the scope of the present invention thereto, but are merely examples, unless otherwise specified. Not too much.

FIG. 4 shows a manufacturing apparatus for manufacturing the substantially dome-shaped reaction container of the present invention shown in FIG. 3, which includes a rotatable mold 10 (rotating container) and a mold for holding the mold 10 in a detachable manner. A holder 11, a rotating means 12 for rotating the mold 10 together with the holder 11, a means 13 for cooling the holder 11, a mold bottom 10a and the mold via a suction chamber (not shown) provided in the holder 11. The side wall 10b includes a suction pipe 14 that communicates with a suction hole 10c, and a vacuum suction pump 15 and a vacuum gauge 16 connected to the suction pipe 14.

The mold 10 is opened at the upper side, and its inner wall surface is formed into a slightly large shape similar to the outer shape of the reaction container by adding a grinding allowance after the molding, and corresponds to the container ceiling portion 1a of the reaction container 1. The bottom portion 10a is made of breathable carbon, and the side wall portion 10b is made of airtight carbon.
3 cm of the part corresponding to the container window 1c of b.
A plurality of suction holes 10c having a diameter of 0.7 mm are provided in a region of x3 cm. Also, above the mold 10,
A vertically movable heat source 17 for heating and melting is provided.

The decompression exhaust pump 15 has an exhaust capacity of 2.5 m ³ / min, preferably 5 m ³ / min or more. In this embodiment, an exhaust pump 1 of 4 m ³ / min
5 is used.

Next, a method of manufacturing the reaction container 1 using the above apparatus will be described. First, after rotating the mold 10 together with the holder 11, crystalline or non-crystalline quartz powder is put into the mold 10, and centrifugal force is used to make a 20 mm-thick film along the inner peripheral surface of the mold 10. Quartz packing layer 1
8 was formed. After the heat source 17 is continuously installed in the center of the mold 10, the suction pressure reducing pump 15 is driven to suck the quartz filling layer 18 by the pressure reducing gauge 16 so that the suction pressure reducing amount is -60.
After the pressure is reduced to 0 mmHg or more, preferably -700 mmHg, heating and melting are performed by the heat source 17.

When a thin molten layer is formed on the inner surface of the quartz filling layer 18 by the heating and melting, the suction decompression amount by the decompression gauge 16 further decreases to -700 mmHg or more, but while maintaining this decompression amount, When heating and melting are continued while rotating the mold 10, the mold bottom 1
A reaction container 1 having a predetermined shape can be formed in which a portion corresponding to 0a and the window portion 1c is transparent and the side wall portion 1b is opaque.
If the depressurization is started after the thin molten layer is formed on the inner peripheral surface of the quartz filling layer 18, fine bubbles remain in the molten layer, which is not preferable. Therefore, the depressurization needs to be performed at least before the thin molten layer is formed, and is preferably performed immediately before the start of heating and melting or at least simultaneously. The container 1 manufactured by the above method is ground and mirror-polished on the outer surface and the inner wall surface, and the opening end side is ground to be flush with the flange 2 if necessary. As a result, as shown in FIG. 3, the reaction container 1 having a transparent ceiling portion (container ceiling portion 1a) and window portion 1c and a side wall portion 1b can be formed.

Then, when the bubble content in the opaque portion of the side wall 1b of the reaction vessel 1 is measured, the diameter is 10 to 25.
There were 40,000 bubbles / cm ³ or more of 0 μm bubbles.
Further, in the above method, transparent parts (container ceiling 1a, window 1
It was confirmed that there was no clear interface between c) and the opaque site (side wall 1b).

When a heat ray having a wavelength of 2 μm is transmitted through the container ceiling portion 1a, the transmittance thereof greatly exceeds 85% and is 90% or more, and the heat ray transmission of the opaque portion of the side wall portion 1b is performed. The rate was significantly lower than 30% and 10% or less.

FIG. 6 shows a manufacturing apparatus for forming the translucent layer 1d between the transparent portion of the container ceiling portion 1a and the opaque portion of the side wall portion 1b, and the bottom portion of the mold 10 for forming the container ceiling portion 1a. A suction hole 10d filled with permeable carbon is provided on the lower end side of the side wall adjacent to. When the reaction container 1 was manufactured by the same method as described above using such an apparatus, a semi-transparent heating region 1d was formed around the transparent portion of the container ceiling 1a on the leaf shown in FIG. It was possible to change the included bubble density. In addition, the bubble content of a portion adjacent to the opaque portion and the translucent portion,
It can be confirmed that it has 20,000 bubbles / cm ³ or more with a diameter of 10 to 250 μm, and its heat ray transmittance is 30%.
It was confirmed that the following satisfied the present invention.

FIG. 8 shows an apparatus for manufacturing the hemispherical reaction vessel 20 shown in FIG. 7, and this apparatus also has a ceiling container ceiling 20a which is transparent and has a downwardly extending portion in the same manner as in the above embodiment.
That is, the hemispherical reaction container 2 having the opaque portion containing the above-mentioned bubbles in the portion 1b reaching the flange 2 at the lower end opening
0 can be manufactured.

FIG. 1 shows a single-wafer CVD apparatus formed by using the reaction container 1 shown in FIG. 3, in which the cylindrical dome-shaped reaction container 1 is installed on a support base 3 made of quartz glass.
A flange 2 is surroundingly joined to the outer edge of the lower end opening of the reaction vessel 1, and O is provided at a portion of the flange 2 facing the support base 3.
A ring 4 is provided to provide an airtight seal between the reaction container 1 and the support base 3. Further, the flange 2 projects further outward than the outer periphery of the support base 3, and the reaction container 1 is raised together with the heat generating lamp while the lifter 5 is locked to the projecting portion 2a, whereby the wafer 6 is opened to the outside of the reaction container 1. It is configured so that it can be easily replaced.

On the support base 3, a susceptor 7 made of graphite or quartz glass for mounting the wafer 6 is provided.
A gas introduction pipe 8 and an exhaust port 9 are provided. A heat source 7a for heating the back surface of the wafer 6 is built in the susceptor 7. As a result, the wafer 6 is heated from the heating source from the back surface of the wafer 6 together with the heating of the lamp 30 from the transparent container ceiling portion 1a of the reaction container 1. As a result, the wafer 6 is heated from both the front and back surfaces, so that the film is formed. The time to reach temperature is reduced.

The heat source 7a is located inside the container 1 but below the wafer 6, and since the heat source 7a is surrounded by the susceptor 7, the particles from the heat source 7a are on the surface of the wafer 6. There is no danger of sticking to.
Further, the wafer 6 is preferably arranged in the opaque portion 1b region below the container ceiling portion 1a, so that heat retention and heat uniformity can be secured. Further, preferably, the mounting height of the wafer 6 is set to be equal to or slightly lower than the window portion 1c so that the film formation state of the wafer 6 can be grasped from the outside of the container 1 through the window portion 1c. Good to do.

The gas introducing pipe 8 is constructed such that the tip nozzle 8a is hung vertically on the wafer 6 and then the nozzle 8a is set slightly downward so that the gas flows over the entire area of the wafer 6. In this case, the inclination angle of the nozzle is 0 to 45 °, preferably 15
It is preferable to set it at about 30 °. A heat generating lamp 30 as a heat source is arranged above the transparent container ceiling portion 1a of the reaction container 1.

When the CVD film is formed by such an apparatus, first, in the state shown in FIG. 7, the wafer 6 is heated to a predetermined temperature from both sides of the heat generating lamp 30 and the heat generating source 7a, and then the reaction gas is supplied from the nozzle 7a of the gas introducing pipe 7. A film forming reaction is performed by performing a CVD process while flowing. After the film formation reaction is completed, the lifter 5 is raised to raise the reaction vessel 1, and as a result, the wafer 6 is opened to the outside of the reaction vessel 1 and can be easily replaced. The processing operation can be repeated easily and easily.

FIG. 2 shows a single-wafer CVD apparatus formed by using the hemispherical reaction vessel 1 shown in FIG. The difference from the above-described embodiment will be mainly described. The bearing 3 is provided at the center of the support base 3.
A rotary shaft 3b configured to be rotatable via a is vertically provided, and a susceptor 7 is fixed to an upper end of the rotary shaft 3b. The susceptor 7 does not have a built-in heat source in order to prevent the bearing 3a from being adversely affected.
Is made into a hemispherical shape instead of a cylindrical dome shape, and the distance between the heat generating lamp 30 arranged above the container 20 and the wafer 6 is minimized to heat the wafer 6 to a predetermined temperature in a short time.

On the other hand, with this structure, the reaction container 20
Although the distance between the sealing portion 20d at the lower end and the container ceiling portion 20a of the container ceiling is also shortened, the sealing 20d portion and the container ceiling portion 20a are reduced.
Since the space is formed by the opaque region 20b, heat propagation does not occur, and problems such as heat deterioration of the sealing portion 20d due to the distance reduction do not occur.

Further, in all of the above-mentioned embodiments, since all the pipes are attached to the lower surface of the support base 3, in other words, no fluid equipment is attached to the reaction vessel 1 side, so that the heat generating lamp 30 can be easily attached. It is possible to raise the reaction vessel 1, which improves the workability such as exchanging the wafer 6 and facilitating maintenance, and simplifies the equipment.

[0037]

[Effect] As described above, according to the present invention, it is possible to easily increase the size of the reaction vessel without forming a welded portion corresponding to the increase in the diameter of the wafer and to obtain sufficient mechanical strength. As a result, even if the size of recent semiconductor wafers is increased to 8 to 12 ″, the mechanical strength is increased, so that high-speed heating and high-speed cooling are possible, and the productivity is increased. Since only the container ceiling (and the transparent window) is transparent and the surrounding area is non-transparent, the heat retention inside the container is improved without heating to a range unnecessary for heating the wafer. As a result, it is possible to completely prevent unnecessary reactions and adverse effects of heat on peripheral equipment and sealing parts without propagating heat to areas not required for heating. Is heating Even if the sealing portion is formed at a position as close as possible, thermal deterioration of the sealing portion does not occur, and as a result, the container can be downsized and flattened, leading to improvement in thermal efficiency and thermal uniformity. Further, according to the present invention, while ensuring the heat retention and soaking property of the wafer heating area, the heating to a range unnecessary for heating the wafer is prevented, and unnecessary reactions and adverse effects of heat on the sealing part and peripheral equipment are exerted. Further, according to the present invention, it is possible to improve workability such as exchanging a wafer and to facilitate the operation.

[Brief description of drawings]

1 shows a single-wafer heat treatment apparatus according to an embodiment of the present invention using the reaction vessel of FIG.

2 shows a single-wafer heat treatment apparatus according to another embodiment of the present invention using the reaction vessel of FIG.

FIG. 3 shows a sectional shape of a reaction container used in the apparatus of FIG.

FIG. 4 shows an apparatus for manufacturing the reaction container of FIG.

5 shows a sectional shape of a reaction container used in the apparatus of FIG.

6 shows an apparatus for manufacturing the reaction container of FIG.

FIG. 7 shows a sectional shape of a reaction container used in the apparatus of FIG.

8 shows an apparatus for manufacturing the reaction container of FIG.

FIG. 9 shows a conventional single-wafer heat treatment apparatus.

FIG. 10 shows another conventional single-wafer heat treatment apparatus.

[Explanation of symbols]

 1, 20 Heat treatment reaction container 1a, 20a Container ceiling 1b, 20b Container peripheral part (side wall) 1d Heating area 2 Flange 3 Support 4 O-ring 5 Lifter 7 Susceptor 8 Gas inlet pipe 9 Exhaust port 10 Rotating container 18 Quartz Powder packing 10a, 10c Suction decompression unit 8 Suction decompression exhaust device 30 Exothermic lamp

Claims (10)

[Claims] 1. A single wafer heat treatment wherein a heating element is arranged above the reaction vessel, and heat from the heating element is heat-processed on a wafer disposed at a predetermined position in the vessel through the ceiling of the vessel. In the apparatus, the container ceiling for receiving the heat of the heating element is a substantially transparent quartz glass part, and most of the peripheral region of the container from the heat receiving part to the lower end sealing part contains bubbles. Single wafer type wafer heat treatment apparatus, which is a non-transparent (semi-transparent and opaque) quartz glass part formed by 2. The reaction container has a substantially hemispherical shape, a substantially dome shape,
Alternatively, the heat treatment apparatus according to claim 1, wherein the heat treatment apparatus has a substantially cylindrical shape, and the container ceiling part and the non-transparent part of the peripheral part of the container are substantially one body with no welded part. 3. The ceiling of the container is a heat ray (wavelength 2 μm)
A transparent part with a transmissivity of 85% or more, and at least a non-transparent part with a heat ray (wavelength of 2 μm) transmissivity of 30% or less in the peripheral part of the container below the heating region part adjacent to the container ceiling part. The heat treatment apparatus according to claim 1, wherein the heat treatment apparatus is provided. 4. The heat treatment apparatus according to claim 1, wherein there is no clear interface of the included bubbles between the container ceiling portion and the container peripheral portion, and the included bubble density can be changed steplessly. 5. The content of bubbles in the peripheral portion of the container where the bubble density is stable, excluding the area adjacent to the ceiling of the container, is 20,000 cells / cm ³ or more of bubbles having a diameter of 10 to 250 μm,
The heat treatment apparatus according to claim 1, wherein the number is preferably 40,000 pieces / cm ³ or more. 6. The heat treatment apparatus according to claim 1, wherein the joint portion of the reaction container is only a flange joined to the outer edge of the circular lower end opening. 7. The heat treatment apparatus according to claim 1, wherein the wafer is arranged in a non-transparent region below the transparent region of the container ceiling. 8. A transparent window portion for grasping a wafer processing state is provided in the peripheral portion of the container, and the non-transparent portion of the window portion and the peripheral portion of the container is a substantially integrated body having no welded portion. The heat treatment apparatus according to claim 1. 9. The reaction container is placed on a support table on which a wafer is placed via a sealing portion, and the reaction container and the support table are separable in the contact and separation directions.
Heat treatment equipment described 10. The heat treatment apparatus according to claim 9, wherein the gas introduction passage and the discharge port are not provided on the reaction container side, and these fluid paths are provided only on the support base side.