JPH07326283A - Multiple cold cathode electron source, driving method thereof, and image forming device - Google Patents

Abstract

PURPOSE:To reduce irregularity of brightness in forming a visible image even when irregularity is generated in resistance value characteristics of a cold cathode electron source by connecting a group of resistors having a specified resistance value serially to a wiring connected to the electron source. CONSTITUTION:Specific resistances 53-1-53-n are serially inserted into a wiring between a cold cathode electron source and a signal side driving part 52. As the type of the resistance 53, a thin film resistor, a thick film resistor, a chip part, etc., may be used, and in the case of forming it after the cold cathode electron source for an image display panel is completed, a surface-mount type chip resistor or resistor module element is favorably used. For a resistance value R of the resistance 53, apparent irregularity of the resistance value of the element is set to be a specified percentage or less by specified operation based on an average resistance value and the maximum irregularity of the resistance value of a surface conduction type electron emission element (SCE).

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-cold-cathode electron source in which a plurality of cold-cathode electron sources are two-dimensionally arranged on a substantially same plane, and an image display device using the multi-cold-cathode electron source. The present invention relates to a driving method of an electron source.

[0002]

2. Description of the Related Art Conventionally, two types of electron sources are known: a thermoelectron source and a cold cathode electron source. As a cold cathode electron source, a field emission type (hereinafter referred to as FE), metal / insulating layer /
There are those using a metal (hereinafter referred to as MIM) or a surface conduction electron-emitting device.

As an example of the FE type, WP Dyke & W.W.Dola
n, "Field emission", Advance in Electron Physics, 8,8
9, (1956) etc. are known.

As an example of the MIM type, CAMead, "The Tu
nnel-emissionamplifier, J.Appl.Phys, 32,646 (1961) and
CASpindt, "Physical properties of thin-film field
emission cathodes with Molybdenum cones ", J.Appl.P
hys, 47, 5248, (1976) and the like are known.

As an example of the surface conduction electron-emitting device, M.
I. Elinson, Radio Eng. Electron Phys., 10, (1965).

The surface conduction electron-emitting device utilizes a phenomenon that electron emission occurs when a current is passed through a thin film of a small area formed on a substrate in parallel with the film surface. As the surface conduction electron-emitting device, one using the SnO2 thin film by Elinson et al., One using the Au thin film [G. Dittm
er: "Thin Solid Films", 9,317 (1972)], In203 / SnO2 thin film [M.Hartwell and CGFonstad: "IEEE Trans.
ED Conf. ", 519, (1975)], by carbon thin film [Hiraki Araki et al .: Vacuum, Vol. 26, No. 1, p. 22 (198)
3)] etc. have been reported.

As a typical device configuration of these surface conduction electron-emitting devices, the device configuration of M. Hartwell described above is shown in FIG.
6 shows. In this figure, 901 is an insulating substrate. Reference numeral 902 denotes an electron emitting portion forming thin film, which is made of an H-shaped metal oxide thin film formed by sputtering and the like, and the electron emitting portion 903 is formed by an energization process called forming described later. 904 is an electron emitting portion 90
A thin film containing 3 is called.

Conventionally, in these surface conduction electron-emitting devices, the electron-emitting portion 903 is generally formed by subjecting the electron-emitting portion forming thin film 902 to an energization process called forming in advance before electron emission. It was target. That is, the forming means that a voltage is applied to both ends of the electron emitting portion forming thin film 902 to locally destroy, deform or alter the electron emitting portion forming thin film, and the electron emission is made into an electrically high resistance state. To form the portion 903. Hereinafter, the electron emitting portion 9 generated by forming
The thin film for forming an electron emitting portion including 03 is referred to as a thin film 904 including an electron emitting portion.

In the surface conduction electron-emitting device which has been subjected to the above-mentioned forming treatment, a voltage is applied to the thin film 904 including the above-mentioned electron-emitting portion and a current is caused to flow on the surface of the device, so that electrons are emitted from the above-mentioned electron-emitting portion 903. It is something that can be released.

Furthermore, a step called "activation" is usually introduced after the forming step is completed. The purpose of this is to increase the electron emission amount by continuing to supply a constant voltage for a certain time to the surface conduction electron-emitting device whose resistance has been increased by forming.

[0011]

In the energization process called forming described above, the initial resistance of the electron emission portion forming thin film 902 is an important parameter.

For example, consider a case in which a plurality of electron emission portion forming thin films 902 are formed in the row direction and the column direction, and a forming process is performed on the thin films. For example, it is assumed that energization processing is performed row by row in the process of sequentially applying a voltage to each row, and the forming processing is performed by repeating this. At this time, the resistance value of each surface conduction electron-emitting device forming each row and column is not necessarily formed to be a constant value.

In this case, even if it is assumed that the applied voltage does not have a distribution in each row, if the resistance value of each element has a distribution, the element having a lower resistance value has a larger current. And the forming is completed first. This indicates that the time spent in the forming process (from the start of forming to the end of energization) (hereinafter referred to as forming time) is different in each element forming the row. For example, when you look at a line,
In the element which started forming first, the voltage application is continued until the formation of the last element in the same row is completed, and in the meantime, activation progresses in that element.

Furthermore, there is a distribution of the resistance value of the surface conduction electron-emitting device even between the rows (in the column direction). Therefore, also in this case, similarly to the phenomenon inside each row, even when the forming of a certain row is completed, the voltage application is continued until the forming of the remaining rows is completed. Therefore, activation progresses in the row where the forming has been completed first.

The variations in the forming time in the above two examples reflect the distribution of the resistance values of the surface conduction electron-emitting devices which form each row or between rows. That is, it is shown that the activation time varies depending on the constituent elements.

The characteristics of each surface conduction electron-emitting device manufactured as described above have a variation in activation time, so that a distribution occurs in the amount of electron beam emission at a certain drive voltage. For this reason, a luminance distribution occurs when the image display device is formed.

The present invention has been made in view of the above problems, and when a visible image is formed even when the resistance value characteristics of the individual cold cathode electron sources forming the multi cold cathode electron source vary. It is an object of the present invention to provide a multi-cold-cathode electron source, a method for driving the electron source, and an image display device that reduce the variation in brightness in the display.

[0018]

[Means for Solving the Problems] and

A multi-cold-cathode electron source according to the present invention for achieving the above object is connected to a plurality of first wirings and a plurality of second wirings, and to each one of the first and second wirings. A plurality of cold cathode electron sources arranged on substantially the same plane,
And a resistor group having a predetermined resistance value connected in series to each of the plurality of first wirings.

The inventors have found that the variation in the amount of electron beam emitted from each surface conduction electron-emitting device has a strong correlation with the variation in the current flowing through each surface-conduction type electron-emitting device.

According to the above structure, the resistance value of each cold cathode electron source when driving the cold cathode electron source as viewed from the driving side is the resistance value of the resistor group connected to the first wiring and the peculiarities of the cold cathode electron source. It becomes the sum with the resistance value of. Since the resistance values of the resistance groups are substantially the same, the rate of variation in the resistance value of the cold cathode electron source viewed from the driving side can be relatively reduced. That is, it is possible to reduce the variation in the value of the current flowing through each cold cathode electron source during driving, and it is possible to reduce the variation in the brightness when the image display device is configured.

It is also possible to further include a resistor group having a predetermined resistance value connected in series to each of the plurality of second wirings. According to this structure, since two resistors are connected to one cold cathode electron source, heat generation in each resistor can be reduced.

Further, a multi-cold-cathode electron source having another structure of the present invention which achieves the above-mentioned object is provided with a plurality of row-direction wirings and a plurality of row-direction wirings provided substantially orthogonal to the respective row-direction wirings. A column direction wiring, a plurality of cold cathode electron sources connected to each one of the plurality of row direction wirings and a plurality of column direction wirings, and a predetermined series connection to each of the plurality of column direction wirings And a resistor having a resistance value.

With this structure, it is possible to reduce the variation in the resistance value of each cold cathode electron source viewed from the driving side and to easily apply it to so-called matrix wiring.
It can be easily incorporated into an image display device.

Further, preferably, the resistance value R of each of the resistors is r, an average resistance value of the plurality of cold cathode electron sources, Δr is a maximum value of variation in resistance values, and each cold cathode electron viewed from the driving side. When the target variation range of the resistance value of the source is y%, the resistance value is set to R = ((100 × Δr) / y) -r. With such a setting, if the resistance value R obtained by setting the target variation range y to 2% is adopted, it is possible to suppress the variation in brightness to a range that can be satisfied in a normal display. Further, if the resistance value R obtained by setting the target variation range y to 1% is adopted, the variation in brightness can be suppressed to a range that can be satisfied as a display for a high-definition television.

Also, preferably, the cold cathode electron source is
It is a surface conduction electron-emitting device in which an electron-emitting portion is formed by applying an electric current to a thin film for forming an electron-emitting portion.

Further, the image display device of the present invention which achieves the above object, comprises a plurality of row direction wirings, a plurality of column direction wirings provided substantially orthogonal to each of the plurality of row direction wirings, and A plurality of cold cathode electron sources connected to each one of a plurality of row-direction wirings and a plurality of column-direction wirings, and a resistor having a predetermined resistance value connected in series to each of the plurality of column-direction wirings A scanning unit that sequentially switches each of the plurality of row-direction wiring lines to a drivable state, and a cold cathode electron source on the row-direction wiring line that is in a drivable state by the scanning unit via the resistance and column-direction wiring lines. Applying means for applying a drive signal; and forming means for irradiating the phosphor with electrons emitted from the cold cathode electron source driven by the scanning means and the applying means to cause each pixel to emit light to form a visible image. To be equipped with And butterflies.

According to the above construction, when a cold cathode electron source is driven by the scanning means and the applying means, it is equivalent to a resistor having a predetermined resistance value being connected in series to the cold cathode electron source. It will be in a state. Thus, by equivalently forming a state in which resistors having a predetermined resistance value are connected in series when each cold cathode electron source is driven, a predetermined resistance value is added when the cold cathode electron source is driven. Therefore, the variation in the current flowing through each cold cathode electron source is reduced.

[0028]

The present inventors have found that among surface-conduction type electron-emitting devices, those in which an electron-emitting portion or its peripheral portion is formed of a fine particle film are used in terms of electron-emitting characteristics or in manufacturing a large number over a large area. I find it preferable.

Therefore, in the following description of the embodiments of the present invention, an image display device using a surface conduction electron-emitting device formed by using a fine particle film as a multi-electron beam source will be described as a preferred example of the present invention. .

Among the cold cathode electron sources, the present invention brings excellent effects particularly in a simple matrix cold cathode multi electron source using a surface conduction electron-emitting device capable of easily forming a large number of devices. Is.

Therefore, first, the surface conduction electron-emitting device used in this embodiment and the image display panel using the same will be described.

Typical structure of the surface conduction electron-emitting device,
For the manufacturing method and characteristics, see, for example, JP-A-2-568.
22 are disclosed. The basic configuration, manufacturing method and characteristics of the surface conduction electron-emitting device according to the present invention by the applicant will be outlined below.

[Basic Structure] FIG. 7 is a view showing the structure of an exemplary electron-emitting device used in this embodiment.
In the figure, 1 is an insulating substrate, 5 and 6 are device electrodes, 4 is a thin film including an electron emitting portion, and 3 is an electron emitting portion.

Of the thin film 4 including the electron emitting portion, the electron emitting portion 3 is made of electrically conductive particles having a particle diameter of several nm.
The thin film 4 including the electron emitting portions other than the electron emitting portion 3 is a fine particle film. The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure is not only in a state in which the fine particles are individually dispersed but also in a state in which the fine particles are adjacent to each other or overlap each other (island shape). Including) also refers to the film.

Specific examples of the thin film 4 including the electron emitting portion include metals such as Rd, Ru, Ag, Au, Ti, In, Cu, Cr, Fe, Zn, Sn, Ta, W, Pb, PdO, SnO2. , Oxides such as In2O3, PbO, Sb2O3, HfB2, ZrB2,
Borides such as LaB6, CeB6, YB4, GdB4, TiC, ZrC, HfC, TaC, Si
Examples thereof include carbides such as C and WC, nitrides such as TiN, ZrN and HfN, semiconductors such as Si and Ge, carbon, AgMg, NiCu and PbSn.

[Outline of Manufacturing Method] Examples of the method for forming the above-mentioned thin film include a vacuum deposition method, a sputtering method, a chemical vapor deposition method, a dispersion coating method, a dipping method and a spinner method.

Various methods are conceivable as a method for forming the electron-emitting device having the electron-emitting portion 3, and an example thereof is shown in FIG. In FIG. 8, reference numeral 2 denotes a thin film for forming an electron emitting portion, which is, for example, a fine particle film. The electron emitting portion forming thin film 2 refers to a thin film before the electron emitting portion 3 is formed.

Next, a method for forming the surface conduction electron-emitting device of this embodiment will be described with reference to FIG.

(1) After the insulating substrate 1 is thoroughly washed with a detergent, pure water and an organic solvent, the device electrodes 5 and 6 are formed on the surface of the insulating substrate 1 by the vacuum deposition technique and the photolinography technique. (FIG. 8A). Any material may be used as the material of the element electrodes as long as it has conductivity. For example, nickel metal may be used. In this example, the element electrode interval L1 is 2 μm and the element electrode length W1 is The film thickness d of the device electrodes 5 and 6 is 100 μm.

(2) Between the device electrodes 5 and 6 provided on the insulating substrate 1, an organic metal solution is applied to the insulating substrate 1 on which the device electrodes 5 and 6 are formed and left to stand. As a result, an organic metal thin film is formed. The organic metal solution is a solution of an organic compound containing a metal such as Rd, Ru, Ag, Au, Ti, In, Cu, Cr, Fe, Zn, Sn, Ta, W, Pb as a main element. . Then, the organometallic thin film is subjected to heating treatment by heating and patterned by lift-off, etching or the like to form the thin film 2 for forming an electron emitting portion (FIG. 8B).

(3) Subsequently, energization processing called forming is performed. According to this process, by applying a voltage between the device electrodes 5 and 6, the thin film 2 for forming an electron emission portion is formed.
The electron emitting portion 3 having a changed structure is formed on the surface (FIG. 8).
(C)). That is, a portion having a changed structure obtained by locally destroying, deforming, or modifying the electron-emitting-portion-forming thin film 2 by this energization process is called an electron-emitting portion 3. The applicants have observed that the electron emitting portion 3 may be composed of metal fine particles as described above.

[Basic Characteristics of Element] Basic characteristics of an electron-emitting device having the above-described element structure produced by the above-described manufacturing method will be described with reference to FIGS. 9 and 10.

FIG. 9 is a schematic block diagram of a measurement / evaluation apparatus for measuring electron emission characteristics of the electron-emitting device having the configuration shown in FIG. In FIG. 9, 1 is an insulating substrate,
Reference numerals 5 and 6 are device electrodes, 4 is a thin film including an electron emitting portion, and 3 is an electron emitting portion. Further, 31 is a power source for applying a device voltage Vf to the device, 30 is an ammeter for measuring a device current If flowing through the thin film 4 including the electron emitting portion between the device electrodes 5 and 6, and 34 is an electron of the device. An anode electrode for capturing the emission current Ie emitted from the emission portion, 33 is a high voltage power source for applying a voltage to the anode electrode 34, and 32 is an emission current Ie emitted from the electron emission portion 3 of the device. Ammeter for the purpose.

To measure the above-mentioned device current If and emission current Ie of the electron-emitting device, the power supply 31 is applied to the device electrodes 5 and 6.
And an ammeter 30 are connected to each other, and an anode electrode 34 to which a power source 33 and an ammeter 32 are connected is arranged above the electron-emitting device. Further, the electron-emitting device and the anode electrode 34
Is installed in a vacuum device, and the vacuum device is equipped with equipment necessary for a vacuum device such as an exhaust pump and a vacuum gauge, so that this device can be measured and evaluated under a desired vacuum. There is. The voltage of the anode electrode is 1 to 10k.
V, the distance H between the anode electrode and the electron-emitting device is 3 to 8 m
It was measured in the range of m.

FIG. 10 shows a typical example of the relationship between the emission current Ie and the device current If and the device voltage Vf measured by the measurement / evaluation apparatus shown in FIG. Note that FIG. 10 is shown in arbitrary units, and the emission current Ie is about 1/1000 of the device current If. As is clear from the figure,
This electron-emitting device has three characteristics with respect to the emission current Ie.

First, in the present device, when a device voltage higher than a certain voltage (called a threshold voltage, Vth in FIG. 10) is applied, the emission current Ie rapidly increases, while below the threshold voltage, the emission current Ie. Is hardly detected. That is, the emission current I
It is a non-linear element having a clear threshold voltage Vth for e.

Secondly, since the emission current Ie depends on the device voltage Vf, the emission current Ie can be controlled by the device voltage Vf.

Thirdly, the amount of charge trapped in the anode electrode 34 can be controlled by the time for which the device voltage Vf is applied.

Since the electron-emitting device has the above characteristics, it is expected to be applied to various fields. Further, the device current If increases monotonically with the device voltage Vf (MI).
An example of the characteristics is shown in FIG. 10, but in addition to this, the device current I
f is a voltage controlled negative resistance (VCNR) with respect to the device voltage Vf
It may also show characteristics. Also in this case, the electron-emitting device has the above-mentioned three characteristics. The surface conduction electron-emitting device in which the conductive fine particles are dispersed in advance can be configured by partially changing the basic manufacturing method in the above-described basic device configuration.

[Image Display Panel] Next, an example of the configuration of an image display panel using the above-mentioned surface conduction electron-emitting device will be described with reference to FIG.

As a typical configuration of a color image display device to which the present invention is applied, first, the above-mentioned Japanese Patent Laid-Open No. 2-5
A plurality of electron-emitting devices manufactured by a manufacturing method such as 6822 are formed on the substrate 101. After fixing the substrate 101 on the rear plate 102, 5 m of the substrate 101
A face plate 110 (configured by forming a phosphor film 108 and a metal back 109 on the inner surface of a glass substrate 107) is arranged above the support frame 103. Face plate 110, support frame 103, rear plate 10
Frit glass was applied to the joint portion of No. 2 and baked by baking at 400 ° C. to 500 ° C. for 10 minutes or more in the air or in a nitrogen atmosphere for sealing. Also, the rear plate 102
The substrate 101 was also fixed to the frit glass.

Further, in FIG. 11, 104 is an electron emitting portion, and 105 and 106 are element electrodes in the X and Y directions, respectively. Although the face plate 110, the support frame 103, and the rear plate 102 form the envelope 111 here, since the rear plate 102 is provided mainly for the purpose of reinforcing the strength of the substrate 101, the substrate 101 itself is used. If it has sufficient strength, the separate rear plate 102 is unnecessary. In this case, the support frame 10 is directly attached to the substrate 101.
3, the face plate 110, the support frame 103,
The substrate 101 constitutes the envelope 111. A metal back 109 is usually provided on the inner surface side of the phosphor film 108. The purpose of the metal back is to improve the brightness by specularly reflecting the light to the inner surface side of the light emitted from the phosphor to the face plate 110 side, to act as an electrode for applying an electron beam accelerating voltage, and This is to protect the phosphor from damage caused by collision of negative ions generated in the enclosure.

The metal back is formed by performing a smoothing process (usually called filming) on the inner surface of the phosphor film after forming the phosphor film, and then vacuum-depositing Al. The face plate 110 may be provided with a transparent electrode (not shown) on the outer surface side of the phosphor film 108 in order to further enhance the conductivity of the phosphor film 108. When performing the above-mentioned sealing, in the case of a color image display device, it is necessary to sufficiently align the phosphors corresponding to the respective colors with the electron-emitting devices. The atmosphere in the glass container thus created is exhausted by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the external terminals Dx _{1 to} Dx _m
And Dy ₁ a voltage is applied between the device electrodes 105 and 106 through the ～Dy _n, implemented forming process described above, to create the electron-emitting device by forming an electron emission portion 104.

Finally, the inside of the glass container is heated and welded at a vacuum degree of about 10 ^-6 torr to seal and seal the envelope. Further, in order to maintain the degree of vacuum in the container after sealing, a step called getter processing is carried out. this is,
Immediately before or after the sealing, resistance heating or high-frequency heating is used to heat a getter arranged at a predetermined position (not shown) of the image display device to form a vapor deposition film. As the getter, Ba or the like is usually the main component, and the degree of vacuum is maintained by the adsorption action of the deposited film.

In the image display device constructed by the above manufacturing method, each electron-emitting device has a terminal D outside the container.
emit electrons by to not x ₁ ~Dx _m applying a voltage through Dy ₁ ~Dy _n. Further, by applying a high voltage of several kV or more to the metal back 109 or the transparent electrode through the high voltage terminal Hv, the electron beam is accelerated and the phosphor film 10 is formed.
An image is formed by colliding with 8 to excite and emit the phosphor. Of course, these configurations are the outlines of the configurations necessary for producing the image display device, and the materials and the like of each member are not limited to the above contents.

In the case of monochrome display, the phosphor film 108 is made of only phosphor. On the other hand, in the case of color display, as shown in FIG. 12, a black electrically conductive material 1 called a black stripe ((A) in FIG. 12) or a black matrix ((B) in FIG. 12) depending on the arrangement of phosphors.
2 and phosphor 13. The purpose of providing the black electrically conductive material 12 is to make the mixed colors of the three primary color phosphors necessary for color display inconspicuous by making the painted portions of each phosphor 13 black, and in the phosphor film 108. This is to suppress the decrease in contrast due to the reflection of external light. Many of the black electrically conductive materials 12 usually contain graphite as a main component, but the material is not limited to this as long as it is a material having electrical conductivity and little transmission and reflection of light.

Further, as a method of applying the phosphor to the glass substrate 107, in the case of monochrome, there are a precipitation method, a printing method and the like. For color, there is a slurry method or the like. Of course, it is also possible to use a printing method in color.

[Embodiment 1] Next, a preferred embodiment of the present invention will be shown to explain a method of correcting the luminance distribution in an image display device using an example cathode electron beam source.

FIG. 1 is a block diagram showing the structure of the cold cathode electron source of the image display panel according to this embodiment. As shown in FIG. 9A, the image display panel of this embodiment has a structure in which a specific resistance is connected to each column wiring on the signal input side of the cold cathode electron beam source. In addition, FIG. 1B shows an equivalent circuit diagram at the time of driving the element when focusing on one surface conduction electron-emitting device.

First, the operating principle of this embodiment will be described with reference to FIG. FIG. 1A shows a cold cathode electron source that constitutes an image display device and a specific resistance connected in series with the electron source. In the simple matrix panel as shown in FIG. 1A, when each pixel is taken out individually, each pixel can be represented by a simple circuit as shown in FIG. 1B. Hereinafter, an example in which the above-mentioned surface conduction electron-emitting device (SCE device) is applied as a cold cathode electron source will be described.

In FIG. 1, the resistance value of the specific resistance is R
[Ω], the average resistance value of the surface conduction electron-emitting device after forming which constitutes the image display panel is r [Ω], and the maximum resistance value variation is Δr, the ratio of the element resistance value variation is Δr / (r + R) = k / A (A is an arbitrary real number). Here, if k / A is suppressed to y [%] or less, k / A ≦ y / 100 can be replaced, and therefore A ≧ (100 · Δr) / (y · r). From the above, R ≧ ((100 · Δr) / y) −r (1) is derived.

That is, the variation in the apparent resistance value is y
It can be understood that each resistance value of the specific resistance to be connected may be a resistance having a resistance value of ((100 · Δr) −r [Ω] or more in order to reduce the resistance value to [%] or less.

Here, Δr, r of each surface conduction electron-emitting device that constitutes the image display panel can be measured after the image display panel is manufactured. Therefore, it is possible to determine the value of the specific resistance to be connected by determining what percentage or less the apparent resistance distribution during driving is kept.

Generally, it is said that the luminance unevenness as a display device should be suppressed to 3% or less, and further preferably to 2% or less. Therefore, the value of the specific resistance may be calculated with y = 2 or y = 3, and this may be connected in series to the column-direction wiring (wiring on the signal side). Further, it is preferable to suppress the luminance unevenness in the display for high definition television to 1% or less.

Next, the data necessary for determining the value of the specific resistance, that is, the method of measuring the resistance value of each electron-emitting device and the method of determining the resistance value of the specific resistance to be actually mounted will be described.

In the case of research and development level or small-volume production In this case, for example, a probe is applied to each element constituting the issuing panel, the resistance value of each element is directly measured, and Δr, r is calculated from the data. The method is the easiest and most accurate method. If Δr, r is calculated, the value of R can be easily calculated from the equation (1).

In case of mass production In mass production, it is not realistic to measure the resistance value of all the elements for each panel. In mass production, assuming that the manufacturing process is stable to some extent, the average resistance value r and the variation Δ of the electron-emitting devices that form the image display panel.
The data of r may be accumulated for each lot or the like by sampling inspection, and the value of the specific resistance may be determined by this data.

As described above, in the surface conduction electron-emitting device that constitutes the image display device, the scanning side devices are connected as a group and the specific resistances are connected in series (that is, the specific wiring is unique to each column on the extraction wiring side on the signal side). By connecting the resistors in series), it is possible to compensate for the variation in the resistance value of each element during driving.

Further, the current flowing through each surface conduction electron-emitting device is controlled by the specific resistance connected in series, and has a controlled variation within a certain range. As a result, variations in the amount of electron beams emitted from the surface conduction electron-emitting devices that finally constitute the image display device are compensated, and the luminance distribution is improved.

Next, the first embodiment will be described with reference to FIG. FIG. 2 is a block diagram showing the configuration of the image display device of this embodiment. The configuration of the present embodiment is based on the consideration that the elements on the scanning side are considered as a group and a specific resistance is formed in each column on the signal side. Note that FIG. 2 is a principle diagram created by using circuit symbols, and actually has a pattern as shown in FIG. FIG. 3 is a diagram showing a formation pattern of the cold cathode multi-electron source of this embodiment.

In FIG. 2, reference numeral 51 is a scan driver.
Sequentially switch and a negative voltage is applied to the terminal Dx ₁ ~Dx _m of each wiring of the scanning (row wirings). The timing of switching the negative voltage application is synchronized with the synchronization signal from the synchronization signal generator 54. 52 is a signal side drive unit,
A signal (positive voltage) corresponding to the image data is applied to each scanning line. The signal side driver 52 simultaneously applies a signal to the terminals of Dy ₁ ~Dy _n based on the signal of one scanning line.
The synchronization with the scan drive unit 51 is performed by the synchronization signal from the synchronization signal generation unit 54. With such a configuration, among the electron-emitting devices on the wiring to which the negative voltage is applied by the scan driving unit 51, the device to which the positive voltage is applied by the signal side driving unit 52 is driven. Then, the phosphor facing the driven electron-emitting device is caused to emit light to form a visible image. 53-1
53-n are specific resistance values having a resistance value R.

Here, the state of voltage application to the surface conduction electron-emitting device connected to the column direction wiring having the Dy ₁ terminal will be described with reference to FIG. Incidentally, Dy ₁ ~Dy _n terminal is the signal side, Dx ₁ ~Dx _m terminal is scanning side. As shown in FIG. 4, a negative voltage is sequentially applied to the scanning-side terminal by switching. Further, a display signal (positive voltage) for each scanning line is applied to the signal side terminal in synchronization with the switching of voltage application to the scanning side terminal. For example, a surface conduction electron-emitting device ((1,1), (1,2), (1,3) in FIG. 2) connected to a column-direction wiring having a terminal Dy ₁ .
.) Are turned on, a voltage is applied to Dy _{1 at the} timing shown in FIG.

Since one electron-emitting device is driven in each column direction in this manner, the above-mentioned FIG.
The equivalent circuit as shown in (B) is established for each electron-emitting device on the cold cathode multi electron source of this embodiment. Therefore, the above equation (1) can be applied by the resistance value R of the specific resistance connected in series to the signal-side column direction wiring, and the variation in the current flowing through each electron-emitting device can be reduced.

Next, the method of forming the specific resistance in this embodiment will be described. Generally, the types of resistors include a thin film resistor formed by using a thin film process, a thick film resistor formed by a printing method such as a resistance paste, and a resistor supplied as a chip component. When the resistance for correction is formed after the cold cathode electron source of the image display panel is completed, it is actually not appropriate to execute the thin film process or the thick film process again. Therefore, when forming a specific resistance in each wiring on the signal side, a method of using a chip resistor for surface mounting (the process in this case is only a simple thermal process) or some resistors are modularized. It is suitable to use a resistive module element which is present.

Here, the method of forming the specific resistance in the first embodiment will be briefly described with reference to FIG. In the figure, 1 is an insulating substrate, 41 is a take-out wiring electrode, 42 is an electrically conductive paste, 43 is a chip resistor, and 45 is a matrix portion. After forming a surface conduction electron-emitting device in the matrix portion (FIG. 5 (A)), an electrically conductive paste is applied to the electrodes of the lead-out wiring portion on the scanning side by a printing method or a dispenser (FIG. 5 (B)). . Next, the surface-mounting chip resistor is set at a predetermined position, and the paste is cured and electrically connected through a heating process (FIG. 5 (C)).

In the first embodiment, as a method of forming the specific resistance connected to each row, the surface mounting chip resistor 4 is used.
The method of adhering 3 with the electrically conductive paste 42 was used. In this case, Amicon silver paste C-990 was used,
By heating at 120 ℃ for 1 hour, the chip resistor 43
Glued.

As a bonding method, in addition to the silver paste,
You may use solder paste. Alternatively, only the resistor may be fixed with the insulating paste, and the electrical connection may be achieved by wire bonding or the like.

In the case of Example 1, the average r of the resistance values of the formed surface conduction electron-emitting devices was about 11 kΩ, and the variation Δr of the resistance values was ± 1.2 kΩ. From this value, when the resistance value of the specific resistance is calculated by setting the resistance variation suppression rate to 3%, R = 29 kΩ. When this specific resistance is connected, by setting the externally applied voltage during driving to 65.5V, a voltage of about 18V is applied to each surface conduction electron-emitting device, and the current flowing through the device is the specific resistance. Controlled by R.

As described above, according to the first embodiment, it becomes possible to suppress the variation in the electron emission amount due to the variation in the resistance between the electron sources in each cold cathode multi-electron source within a desired range, and display an image. The brightness variation in the device is improved.

[Embodiment 2] The resistor connected in series to the signal side wiring is not limited to that of Embodiment 1. For example, a resistor network or the like may be used to externally attach the image display panel as shown in FIG. In the second embodiment, an example in which a thick film resistance network Model H10-33 kΩ manufactured by Beckman Co., Ltd. is used and a specific resistance is externally attached to the image display panel will be described.

For example, as shown in FIG. 6, the resistor network 61 is connected to a signal side wiring driving IC (signal side driving section 5).
The configuration of the present invention can be realized by connecting the output terminal of 2) in series. FIG. 6 is a diagram illustrating a mounting state of the specific resistance according to the second embodiment. With such a configuration, the work of soldering the resistor network is performed outside the image display panel, and it is not necessary to add a heating step as in the first embodiment. Therefore, the image display panel side is not adversely affected.

In the case of the second embodiment, the image panel is the first embodiment.
In the same manner as above, since the average r of the resistance values of the formed surface conduction electron-emitting device is about 11 kΩ and the variation Δr of the resistance value is ± 1.2 kΩ, the suppression rate of the resistance variation is 3%. When calculating the resistance value of the specific resistance, R = 29
It becomes kΩ. Here, if a 33 kΩ resistor network is used, the variation suppression rate is better than 3%. When this specific resistance is connected, the external voltage applied during driving is 72V.
About 18V to each surface conduction electron-emitting device
Voltage is applied. The current flowing through the element is mainly controlled by R.

As described above, according to the second embodiment,
Since the mounting process of the specific resistance is performed outside the image display panel, it is possible to eliminate the influence of heat on the image display panel.

As described above, according to each of the above embodiments, in the image display device using the cold cathode multi-electron source, especially the surface conduction electron-emitting device, the surface conduction electron-emitting device constituting each pixel is By connecting a characteristic resistance for correction after the panel is completed, it becomes possible to control the current flowing through the surface conduction electron-emitting device within a certain range. As a result, it is possible to suppress variations in the amount of electrons emitted when the elements are driven, and it is possible to improve variations in brightness in the image display device.

In each of the above embodiments, the specific resistance is inserted on the signal drive side, but it is also possible to connect the specific resistance to the wiring on the scanning side. This state is shown in FIG.
However, in such a configuration, the driving method of the signal side driving section 52 is to sequentially drive one element at a time as shown in FIG. Also, in some cases,
It is also possible to output Dy _{1 to} Dy _n at the same time and sequentially drive n elements at a time.

Further, according to the driving method as shown in FIG. 14, the specific resistance can be connected to both the signal side and the driving side. According to this structure, the resistance value of the specific resistance can be divided into two, and heat generation or the like due to each specific resistance can be suppressed.

The image display panel applied to each of the above-described embodiments can be applied in various ways, but typical examples will be described below.

FIG. 15 is a diagram showing an example of a display device configured to display image information provided from various image information sources such as television broadcasting on the display panel described above. is there. 11 in the figure
00 is a display panel, 1101 is a display panel drive circuit, 1102 is a display controller, 1103 is a multiplexer, 1104 is a decoder,
1105 is an input / output interface circuit, 1106 is C
PU, 1107 is an image generation circuit, 1108 and 110.
9 and 1110 are image memory interface circuits,
Reference numeral 1111 is an image input interface circuit, 1112 and 1113 are TV signal receiving circuits, and 1114 is an input unit.

(It should be noted that, in this figure, the processing circuit for the audio component of each input signal such as a television, the speaker, etc. are omitted.) Hereinafter, the function of each part will be described along the flow of the image signal. Do it.

First, the TV signal receiving circuit 1113 is a circuit for receiving a TV image signal transmitted using a wireless transmission system such as radio waves or spatial optical communication. The system of the TV signal to be received is not particularly limited, and for example, various systems such as NTSC system, PAL system and SECAM system may be used. Further, a TV signal (for example, a so-called high-definition TV such as the MUSE system) including a larger number of scanning lines than this is suitable for taking advantage of the display panel suitable for a large area and a large number of pixels. It is a signal source. The TV signal received by the TV signal receiving circuit 1113 is output to the decoder 1114.

The TV signal receiving circuit 1112 is a circuit for receiving a TV image signal transmitted using a wire transmission system such as a coaxial cable or an optical fiber. Similar to the TV signal receiving circuit 1113, the system of the TV signal to be received is not particularly limited, and the TV signal received by this circuit is also output to the decoder 1104.

Further, the image input interface circuit 11
Reference numeral 11 denotes a circuit for capturing an image signal supplied from an image input device such as a TV camera or an image reading scanner. The captured image signal is a decoder 1104.
Is output to.

Further, the image memory interface circuit 1
110 is a video tape recorder (hereinafter abbreviated as VTR)
The circuit for fetching the image signal stored in is output to the decoder 1104.

Further, the image memory interface circuit 1
Reference numeral 109 is a circuit for capturing the image signal stored in the video disc, and the captured image signal is output to the decoder 1104.

Further, the image memory interface circuit 1
Reference numeral 108 denotes a circuit for capturing an image signal from a device that stores still image data, such as a so-called still image disk. The captured still image data is decoded by the decoder 11
It is output to 04.

Further, the input / output interface circuit 110
Reference numeral 5 is a circuit for connecting the present display device to an external computer, a computer network, or an output device such as a printer. It is of course possible to input / output image data and character / graphic information, and in some cases, input / output control signals and numerical data between the CPU 1106 of the display device and the outside.

Further, the image generation circuit 1107 is provided with image data, character / graphic information, or a CPU which is externally input through the input / output interface circuit 1105.
1106 is a circuit for generating display image data based on image data and character / graphic information output from 1106. Inside this circuit, for example, a rewritable memory for accumulating image data and character / graphic information, a read-only memory in which an image pattern corresponding to a character code is stored, a processor for performing image processing, etc. And the circuits necessary for image generation are incorporated.

The display image data generated by this circuit is output to the decoder 1104, but in some cases, it can be output to an external computer network or printer via the input / output interface circuit 1105.

Further, the CPU 1106 mainly performs operations related to operation control of the display device and generation, selection and editing of a display image.

For example, a control signal is output to the multiplexer 1103 to appropriately select or combine image signals to be displayed on the display panel. At that time, a control signal is generated to the display panel controller 1102 according to the image signal to be displayed, and the screen display frequency, the scanning method (for example, interlaced or non-interlaced), the number of scanning lines in one screen, etc. are displayed. The operation of the device is controlled appropriately.

Image data or character / graphic information is directly output to the image generation circuit 1107, or an external computer or memory is accessed through the input / output interface circuit 1105 to obtain image data or character / figure information. Enter graphic information.

It should be noted that the CPU 1106 may of course be involved in work for other purposes. For example,
It may be directly related to the function of generating and processing information, such as a personal computer or a word processor.

Alternatively, as described above, the input / output interface circuit 1105 may be connected to an external computer network to perform work such as numerical calculation in cooperation with an external device.

The input unit 1114 is the CPU 11
A user inputs commands, programs, data, etc. at 06. For example, various input devices such as a keyboard, a mouse, a joystick, a bar code reader, and a voice recognition device can be used.

Further, the decoder 1104 has the above-mentioned 1107.
Is a circuit for inversely converting various image signals input from the signals 1 to 1113 into three primary color signals or luminance signals and I signals and Q signals. It is desirable that the decoder 1104 has an image memory therein, as indicated by a dotted line in the figure. This is for handling a television signal that requires an image memory for reverse conversion, including the MUSE system. Further, the provision of the image memory facilitates the display of a still image, or facilitates image processing and editing such as image thinning, interpolation, enlargement, and synthesis in cooperation with the image generation circuit 1107 and the CPU 1106. This is because the advantage of being able to do it is born.

Further, the multiplexer 1103 uses the C
The display image is appropriately selected based on the control signal input from the PU 1106. That is, the multiplexer 1103 selects a desired image signal from the inversely converted image signals input from the decoder 1104 and outputs it to the drive circuit 1101. In that case, by switching and selecting image signals within one screen display time, it is possible to divide one screen into a plurality of areas and display different images depending on the areas, as in a so-called multi-screen television. .

Also, the display panel controller 1
Reference numeral 102 is a circuit for controlling the operation of the drive circuit 1101 based on a control signal input from the CPU 1106.

First, regarding the basic operation of the display panel, for example, a signal for controlling the operation sequence of a display panel drive power source (not shown) is output to the drive circuit 1101.

Further, regarding the driving method of the display panel, for example, a signal for controlling the screen display frequency and the scanning method (for example, interlace or non-interlace) is output to the drive circuit 1101.

In some cases, control signals relating to image quality adjustment such as brightness, contrast, color tone and sharpness of a display image may be output to the drive circuit 1101.

The drive circuit 1101 is a circuit for generating a drive signal to be applied to the display panel 1100, and the image signal input from the multiplexer 1103 and the display panel controller 11 are provided.
It operates on the basis of a control signal inputted from 02.

The functions of the respective parts have been described above. With the configuration illustrated in FIG. 15, the display panel 1 displays image information input from various image information sources in this display device.
It is possible to display 100. That is, various image signals such as television broadcast are transmitted to the decoder 11
After inverse conversion at 04, multiplexer 1103
Are selected appropriately and input to the drive circuit 1101. On the other hand, the display controller 1102 generates a control signal for controlling the operation of the drive circuit 1101 according to the image signal to be displayed. The drive circuit 1101 applies a drive signal to the display panel 1100 based on the image signal and the control signal. As a result, the image is displayed on the display panel 1100. A series of these operations is controlled by the CPU 1106 as a whole.

In this display device, the image memory built in the decoder 1104 and the image generation circuit 11 are also provided.
Due to the involvement of the CPU 07 and the CPU 1106, not only is a plurality of pieces of image information that are long-lived displayed, but also image information to be displayed is enlarged, reduced, rotated, moved, edge emphasized, thinned, or the like. Interpolation, color conversion,
It is also possible to perform image processing such as image aspect ratio conversion, and image editing such as composition, deletion, connection, replacement, and fitting. Further, although not particularly mentioned in the description of the present embodiment, a dedicated circuit for processing and editing voice information may be provided as in the above-mentioned image processing and image editing.

Therefore, the present display device has functions such as a display device for television broadcasting, a terminal device for video conference, an image editing device, a computer terminal device, an office terminal device such as a word processor, and a game machine. It can be combined with a stand, and has a very wide range of applications for industrial or consumer use. Moreover, since the display panel can be easily thinned, the depth of the device can be reduced. In addition, it is possible to display a highly realistic image with good visibility because it is easy to enlarge the screen, has high brightness, and has excellent viewing angle characteristics.

[0115]

As described above, according to the present invention, even if the characteristics of the electron-emitting devices of the formed cold cathode multi-electron source vary, it is possible to improve the variation in brightness at the time of image display. Is possible.

[0116]

[Brief description of drawings]

FIG. 1 is a block diagram showing the configuration of a cold cathode multi-electron source of an image display panel according to this embodiment.

FIG. 2 is a block diagram showing a control configuration of the image display device of the present embodiment.

FIG. 3 is a diagram showing a formation pattern of a cold cathode multi electron source according to the present embodiment.

FIG. 4 is a diagram showing a timing of applying a voltage to a surface conduction electron-emitting device connected to a column-direction wiring.

FIG. 5 is a diagram illustrating a method of forming a specific resistance according to the first exemplary embodiment.

FIG. 6 is a diagram illustrating a mounted state of a specific resistance according to a second exemplary embodiment.

FIG. 7 is a diagram showing a configuration of an exemplary electron-emitting device used in this example.

FIG. 8 is a diagram illustrating an example of a method of forming an electron-emitting device having an electron-emitting portion.

FIG. 9 is a schematic configuration diagram of a measurement / evaluation apparatus for measuring electron emission characteristics of an electron emission element.

10 is a diagram showing a typical example of the relationship between the emission current Ie and the device current If of the electron-emitting device of FIG. 9 and the device voltage Vf.

FIG. 11 is a diagram showing a configuration example of an image display panel using a surface conduction electron-emitting device.

FIG. 12 is a diagram illustrating a configuration example of a phosphor film.

FIG. 13 is a block diagram showing a modified example of the image forming apparatus of this embodiment.

FIG. 14 is a diagram illustrating drive timing of elements in the image forming apparatus in FIG.

FIG. 15 is a diagram showing an example of a display device configured to display image information provided from various image information sources such as television broadcasting.

FIG. 16 is a diagram showing a typical device configuration example of a surface conduction electron-emitting device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Electron emission part forming thin film 3 Electron emission part 4 Thin film including electron emission part 5 and 6 Element electrode 51 Scan drive part 52 Signal side drive part 53-1 to 53-n Specific resistance

Claims (15)

[Claims] 1. A plurality of first wirings and a plurality of second wirings, and a plurality of cold cathode electron sources connected to each one of the first and second wirings and arranged on substantially the same plane. A multi-cold-cathode electron source comprising: a resistor group having a predetermined resistance value connected in series to each of the plurality of first wirings. 2. The multi-cold-cathode electron source according to claim 1, further comprising a resistor group having a predetermined resistance value connected in series to each of the plurality of second wirings. 3. A plurality of row-direction wirings, a plurality of column-direction wirings provided substantially orthogonal to each of the plurality of row-direction wirings, and a plurality of row-direction wirings and a plurality of column-direction wirings, respectively. A multi-cold-cathode electron source, comprising: a plurality of cold-cathode electron sources connected together; and a resistor having a predetermined resistance value connected in series to each of the plurality of column-direction wirings. 4. The resistance value R of each of the resistors is r, the average resistance value of the plurality of cold cathode electron sources, Δr is the maximum value of the variation in resistance values, and the resistance of each cold cathode electron source viewed from the driving side. 3. The multi-cold-cathode electron source according to claim 2, wherein R = ((100 × Δr) / y) −r when the target variation range of the value is y%. 5. The multi-cold-cathode electron source according to claim 3, wherein each of the resistors has a resistance value R obtained by setting the target variation range y to 2%. 6. The multi-cold-cathode electron source according to claim 3, wherein each of the resistors has a resistance value R obtained by setting the target variation range y to 1%. 7. The cold cathode electron source is a surface conduction electron-emitting device in which an electron-emitting portion is formed by subjecting a thin film for forming an electron-emitting portion to an energization process.
The multi-cold-cathode electron source according to 1. 8. The multi-cold-cathode electron source according to claim 2, further comprising a resistor having a predetermined resistance value connected in series to the plurality of row-direction wirings. 9. A plurality of row-direction wirings, a plurality of column-direction wirings provided substantially orthogonal to each of the plurality of row-direction wirings, and a plurality of row-direction wirings and a plurality of column-direction wirings, respectively. A plurality of cold cathode electron sources connected to one, a resistor having a predetermined resistance value connected in series to each of the plurality of column-direction wirings, and a state capable of sequentially driving each of the plurality of row-direction wirings Scanning means for switching to, and an applying means for applying a drive signal to each of the cold cathode electron sources on the row-direction wirings that can be driven by the scanning means through the resistors and the column-direction wirings, the scanning means and the applying means. An image display device comprising: a forming unit configured to irradiate a phosphor with electrons emitted from a cold cathode electron source driven by the unit to emit light from each pixel to form a visible image. 10. The applying means simultaneously applies a drive signal to each of the cold cathode electron source groups on the row-direction wirings which can be driven by the scanning means via the resistance and the column-direction wirings. The image display device according to claim 8, wherein. 11. A plurality of row-direction wirings, a plurality of column-direction wirings provided substantially orthogonal to each of the plurality of row-direction wirings, and a plurality of row-direction wirings and a plurality of column-direction wirings, respectively. A plurality of cold cathode electron sources connected to one, a resistor having a predetermined resistance value connected in series to each of the plurality of row-direction wirings, and a plurality of row-direction wirings via the resistors Scanning means for sequentially switching to a drivable state by the scanning means, and an application means for sequentially switching and applying a driving signal to each of the cold cathode electron sources on the row-directional wiring that is drivable by the scanning means through the column-directional wiring. Forming means for irradiating the phosphor with electrons emitted from the cold cathode electron source driven by the scanning means and the applying means to cause each pixel to emit light, and forming a visible image. Image display device . 12. A plurality of row-direction wirings, a plurality of column-direction wirings provided substantially orthogonal to each of the plurality of row-direction wirings, and a plurality of row-direction wirings and a plurality of column-direction wirings, respectively. A plurality of cold cathode electron sources connected to one, a row-direction resistance having a predetermined resistance value connected in series to each of the plurality of row-direction wirings, and a series of connection to each of the plurality of column-direction wirings A column-direction resistance having a predetermined resistance value connected thereto, a scanning unit that sequentially switches each of the plurality of row-direction wiring lines to a drivable state through the row-direction resistance, and a row that is drivable by the scanning unit. Applying means for sequentially switching and applying a drive signal to each of the cold cathode electron sources on the directional wiring through the column resistance and the column directional wiring, and emitting from the cold cathode electron sources driven by the scanning means and the applying means. Electrons to be irradiated to the phosphor to emit each pixel, the image display apparatus characterized by comprising: a forming means for forming a visible image, a. 13. A plurality of row-direction wirings, a plurality of column-direction wirings provided substantially orthogonal to each of the plurality of row-direction wirings, and a plurality of row-direction wirings and a plurality of column-direction wirings, respectively. A plurality of cold cathode electron sources connected together,
A method of driving a multi-cold-cathode electron source, comprising: a resistor having a predetermined resistance value connected in series to each of the plurality of column-direction wirings, wherein each of the plurality of row-direction wirings can be sequentially driven. And a applying step of applying a drive signal to each of the cold cathode electron sources on the row-direction wirings in the drivable state by the scanning step via the resistance and the column-direction wirings. And driving method of the electron source. 14. A plurality of row-direction wirings, a plurality of column-direction wirings provided substantially orthogonal to each of the plurality of row-direction wirings, and a plurality of row-direction wirings and a plurality of column-direction wirings, respectively. A plurality of cold cathode electron sources connected together,
A method for driving a multi-cold-cathode electron source comprising: a resistor having a predetermined resistance value connected in series to each of the plurality of row-direction wirings, wherein each of the plurality of row-direction wirings is connected to the resistor. Scanning step for sequentially switching to a drivable state via the scanning step, and an application step for sequentially switching and applying a driving signal to each of the cold cathode electron sources on the row-directional wirings in the drivable state by the scanning step via the column-directional wirings And a driving method of an electron source, comprising: 15. A plurality of row-direction wirings, a plurality of column-direction wirings provided substantially orthogonal to each of the plurality of row-direction wirings, and a plurality of row-direction wirings and a plurality of column-direction wirings, respectively. A plurality of cold cathode electron sources connected together,
A row-direction resistance having a predetermined resistance value connected in series to each of the plurality of row-direction wirings, and a column-direction resistance having a predetermined resistance value connected in series to each of the plurality of column-direction wirings. A method for driving a multi-cold-cathode electron source, comprising: a scanning step of sequentially switching each of the plurality of row-direction wiring lines to a driveable state via the row-direction resistance; and a row in a driveable state by the scanning step. A driving method of an electron source, comprising: an applying step of sequentially switching and applying a drive signal to each of the cold cathode electron sources on the direction wiring through the column direction resistance and the column direction wiring.